22 results about "Tungsten target" patented technology

The invention belongs to the technical field of nuclear physics and particle accelerators, and relates to a high-precision wide-energy-spectrum neutron source target body structure applied to a spallation neutron source device. The method comprises the following steps: a tungsten target is adopted, and a 6cm thin target design is adopted; the cooling layer contains boron water and the like and can be used for cooling and slowing down neutrons; the moderation layer moderates the neutron energy spectrum to a thermal neutron energy region by using boron-containing water; the shielding layer is made of low-carbon steel and concrete to ensure radiation safety; the tail end of the neutron channel is connected with an experimental terminal; according to the thin target design, the energy resolution is improved, the energy resolution of neutrons below 100 keV is higher than 0.1%, and the energy resolution of neutrons below 1 MeV reaches 0.3%; the boron element reduces the gamma ray background; and the five neutron pore channels meet various requirements. The overall design realizes the effect required by the high-precision neutron experiment and improves the precision of the device.

The invention relates to a consolidated abrasive particle grinding pad and a grinding method for tungsten materials, and relates to the technical field of surface machining, the consolidated abrasive particle grinding pad comprises an abrasive particle layer; the abrasive particle layer comprises the following components in percentage by mass: 35-45% of silicon carbide particles, 8-15% of ceramic particles and the balance of resin. According to the fixed abrasive particle grinding pad provided by the invention, through the design of the abrasive particle layer in the grinding pad, when a tungsten material is machined, a good machining effect can be achieved, and the specular reflectance of a tungsten target material obtained after machining is larger than or equal to 92.8% and can reach 96.8% or above in a preferable scheme.

To provide a sputtering system and a film deposition method capable of depositing a low-resistance tungsten film.SOLUTION: The sputtering apparatus includes a substrate stage 2 for holding a substrate Sw in a vacuum chamber 1 in which a target 3 made of tungsten is installed, and a high-frequency power supply Hs for supplying high-frequency power to the substrate stage 2. When a first plasma atmosphere Pm1 is generated in a vacuum chamber 1 and sputtered particles are stuck and deposited on a substrate Sw by sputtering a target 3 to form a tungsten film, high-frequency power is supplied to a substrate stage 2 to generate a second plasma atmosphere Pm2, and positive ions in the first plasma atmosphere Pm1 are also made to collide with the substrate Sw. A ratio of an anode area to a cathode area is set in a range of 4.0 to 6.0, where the cathode area is an area of the substrate holding surface 2a of the substrate stage 2, and the anode area is a surface area in the vacuum chamber 1 functioning as one of the electrodes of the substrate stage 2 and the other of the electrodes of the second plasma atmosphere Pm2.SELECTED DRAWING: Figure 1

This invention provides a tungsten sputtering target and its preparation method, relating to the field of magnetron sputtering target preparation technology. The preparation method includes first loading tungsten powder into a casing; then performing vacuum hot pressing sintering on the casing filled with tungsten powder. During vacuum hot pressing sintering, the casing isolates the tungsten powder from the carbon atmosphere, preventing the introduction of impurity elements, and simultaneously achieving degassing, sealing, and sintering of the tungsten powder in the casing; followed by hot isostatic pressing. The casing is made of a metal with a melting point higher than 2000℃ that does not chemically react with tungsten. Before vacuum hot pressing sintering, this invention uses a metal casing to fill the tungsten powder, which not only improves the initial density and uniformity of the tungsten powder and increases the contact area between powder particles, thus improving sintering activity; it also prevents carbon elements from intruding into the blank, reducing carbon inclusions, improving the purity of the target material, lowering the sintering temperature and pressure, improving production efficiency, reducing energy consumption, and extending the service life of the mold.

The invention provides a method for detecting the grain size of a tungsten target material. The detection method comprises the following steps: (1) carrying out first grinding and polishing treatment and second grinding and polishing treatment on a to-be-detected area of a tungsten target material to obtain a detected surface; (2) performing circumferential sealing and enclosing treatment on the detection surface to form a sealed detection chamber, then injecting etching liquid into the sealed detection chamber to perform etching treatment, and performing cleaning treatment and drying treatment to obtain a detection sample; the etching liquid comprises nitric acid, hydrofluoric acid and sulfuric acid; and (3) observing the metallographic structure of the detection sample by using a portable microscope. The tungsten target material with a smooth and flat interface can be obtained through simple grinding and polishing treatment, a crystal boundary diagram obtained after etching treatment is clear, and the grain size of the tungsten target can be conveniently detected; according to the detection method, different areas of the target material can be detected for multiple times, the overall uniformity of the target material can be effectively known, and local abnormal products are prevented from flowing into clients.

Provided in the present disclosure are an electro accelerator and a target cooling device thereof. The target cooling device comprises a body housing, a liquid inlet, a liquid outlet, a target material and an isolation sheet, wherein a mounting hole is provided in the middle of the body housing; a liquid-cooling cavity is provided inside the body housing; one end of the liquid-cooling cavity is connected to the liquid inlet, and the other end of the liquid-cooling cavity is connected to the liquid outlet; the target material and the isolation sheet are both arranged in the mounting hole, and the target material is arranged above the isolation sheet; and the liquid-cooling cavity comprises a gap between the target material and the isolation sheet. Provided in the present disclosure is a water-cooling heat dissipation mechanism for a target material, the mechanism improving the heat dissipation efficiency, taking away heat in a timely and effective manner, reducing the temperature of the target material, ensuring the efficiency and quality of X-ray generation, and making an apparatus operate more stably and safely. Furthermore, a tungsten target, a flange, a collimator and the heat dissipation structure are integrated into one device, such that the apparatus can have a simplified structure and is easily mounted.

The invention discloses an X-ray diffraction morphology instrument, and relates to the technical field of X-ray diffraction detection.The X-ray diffraction morphology instrument comprises a light source structure, a sample bearing structure and an X-ray detector, the sample bearing structure is used for bearing a sample, the light source structure comprises a light source and a capillary element, a tungsten target is adopted as a target material of the light source, and the capillary element is arranged on the light source; the light source is used for generating divergent X-ray light beams, the capillary element is used for gathering the X-ray light beams generated by the light source into focused light beams or collimated light beams and irradiating the focused light beams or collimated light beams onto a sample, and the X-ray detector is used for collecting diffraction imaging signals generated by the sample. The X-ray diffraction morphology instrument provided by the invention can efficiently test the X-ray diffraction morphology of the crystal.

The invention discloses a preparation method of a fine-grain high-density high-purity tungsten target material, which belongs to the technical field of target material preparation, and comprises the following steps: pressing tungsten powder into a blank; the blank is placed on a hollowed-out supporting plate, the blank is sintered into the tungsten porous part under the hydrogen atmosphere which is continuously supplied in a flowing mode, the blank is located on the upstream side of the supporting plate in the hydrogen supply direction and partially covers the hollowed-out through holes, and upstream hydrogen penetrates through the supporting plate from the uncovered through holes to circulate; sleeved hot isostatic pressing treatment is carried out on the tungsten porous part to obtain the tungsten target material, a sheath is provided with a contact layer making contact with a treated workpiece, and the material of the contact layer contains tantalum. Compared with the prior art, the tungsten target material can be sintered in the hydrogen atmosphere in the sintering process, the oxygen impurity content in the tungsten target material is reduced, and the purity of the tungsten target material is improved.

The invention relates to the field of sputtering targets for semiconductor manufacturing, and particularly provides a fine-grain tungsten target and a preparation method thereof.The preparation method comprises the steps that 1, halogenated alkane is pre-activated and then subjected to chemical vapor deposition with hydrogen and tungsten hexafluoride on a substrate, and a carbon-doped tungsten material is formed; and (2) the carbon-doped tungsten material is subjected to annealing treatment at the temperature of 1500-2100 DEG C, and the fine-grain tungsten target material is obtained. The preparation method is simple in process, and the prepared tungsten target material has high purity, high density and an equiaxed fine grain structure.

The application discloses a diffusion welding method of a chemical vapor deposition tungsten target material and relates to the technical field of target material welding. The diffusion welding method comprises the following steps: providing two groups of tungsten target material assemblies; processing a sine wave tooth structure along a concentric circle on a tungsten plate welding surface of each group of tungsten target material assemblies; processing a second sine wave tooth structure along a spiral line on a back plate welding surface of each group of tungsten target material assemblies; coating a film on the welding surface of each back plate and each tungsten plate; providing a sheath assembly; placing the two groups of tungsten target material assemblies which are oppositely arranged along the thickness direction in a containing cavity, so that the back plates of the two groups of tungsten target material assemblies abut against each other, and an interval layer is arranged between the two back plates; and sequentially performing the following steps on the sheath assembly: pumping, sealing, and hot isostatic pressing diffusion welding, so as to obtain a tungsten target material. The diffusion welding method can guarantee the bonding strength of the welding interface and reduce the risk of cracking or fragmentation of the chemical vapor deposition tungsten target material in the diffusion welding process.

The invention provides a mirror surface grinding and polishing processing method of a tungsten target material and application of the mirror surface grinding and polishing processing method. The mirror surface grinding and polishing processing method comprises chemical mechanical grinding treatment and chemical mechanical polishing treatment which are carried out in sequence. The tungsten target material with a smooth and flat interface can be obtained through grinding-polishing treatment, the interface roughness is reduced to 0.10 [mu] m or below, a crystal boundary diagram obtained through corrosion is clear, and the grain size of the tungsten target can be conveniently detected.

The invention provides a sputtering device capable of forming a low-resistance tungsten film and a film forming method. The present invention is provided with: a substrate stage (2) for holding a substrate (Sw) in a vacuum chamber (1) in which a tungsten target (3) is provided; and a high-frequency power source (Hs) that applies high-frequency power to the substrate stage (2). When a first plasma atmosphere (Pm1) is generated in a vacuum chamber (1) and a tungsten film is formed by depositing sputtering particles on a substrate (Sw) by sputtering of a target (3), a second plasma atmosphere (P2) is generated by applying high-frequency power to a substrate stage (2), and positive ions in the first plasma atmosphere (Pm1) are also caused to collide with the substrate (Sw). The area of the substrate holding surface (2a) of the substrate stage (2) is set as the cathode area, the surface area in the vacuum chamber (1), which functions as one electrode of the substrate stage (2) and as the other electrode of the second plasma atmosphere (P2), is set as the anode area, and the ratio of the anode area to the cathode area is set to be in the range of 4.0-6.0.

The invention relates to a tungsten target material assembly and a preparation method thereof. The tungsten target material assembly sequentially comprises a tungsten target material, an aluminum middle layer and a back plate from top to bottom. The surface of the aluminum intermediate layer is provided with a porous oxide film. The porous oxidation film is arranged on the surface of the aluminum middle layer, the thickness of an element diffusion layer in tungsten and aluminum and the thickness of an element diffusion layer in aluminum and a back plate can be increased due to the existence of the porous oxidation film, the mechanical interlocking degree between every two adjacent layers is increased, and then the bonding strength of the tungsten target material assembly is improved.

A method for producing a radionuclide comprises irradiating a target material with a linear accelerator to produce a radionuclide, dissolving the irradiated target material comprising the radionuclide, and separating the radionuclide from the irradiated target material. The irradiated target material may be dissolved in an acidic solution comprising one or more mineral acids. The target material may include a tungsten target material, such as a natural tungsten target material comprising one or more of 180W, 182W, 183W, 184W, and 186W or a tungsten target material exhibiting an elemental purity of about 99.95%. Additional methods for producing tantalum radioactive isotopes are disclosed.

The embodiment of the application discloses large-size crack-free fine-grain high-purity tungsten sputtering target material and a preparation method thereof; the method comprises the following steps: S1, selecting high-purity tungsten powder raw material; the particle size range of the tungsten powder raw material is 0.47-1.89 mu m, D10=0.47 mu m, D50=1.07 mu m, D90=1.89 mu m, and Span=1.32; S2, the selected high-purity tungsten powder raw material is pretreated by using a glycerol-ethanol mixed solution, and dried to obtain pretreated tungsten powder; S3, the pretreated tungsten powder is cold isostatic pressing forming to obtain a tungsten green body; S4, the tungsten green body is vacuum pre-sintering to obtain a vacuum pre-sintering compact; S5, the vacuum pre-sintering compact is sealed in a niobium-based sheath to obtain a sealed compact body; S6, the sealed compact body is hot isostatic pressing sintering to obtain a tungsten target compact body; and S7, the tungsten target compact body is machined to obtain the large-size crack-free fine-grain high-purity tungsten sputtering target material.

The application discloses a preparation method of fine-grain high-density high-purity tungsten target material and belongs to the technical field of target material preparation. The method comprises the following steps: tungsten powder is pressed into a blank; the blank is placed on a hollow supporting plate, and the blank is sintered into a tungsten porous piece under a continuously flowing hydrogen atmosphere; the blank is located on the upstream side of the supporting plate along the hydrogen supply direction and partially covers the hollow perforations; upstream hydrogen penetrates the supporting plate through the uncovered perforations; a tungsten target material is obtained by performing a hot isostatic pressing treatment on the tungsten porous piece; a sleeve is provided with a contact layer in contact with the treated workpiece, and the contact layer is made of tantalum. Compared with the prior art, the application can sinter the tungsten target material in a hydrogen atmosphere during the sintering process, reduces the oxygen impurity content in the tungsten target material, and improves the purity of the tungsten target material.

This invention relates to the field of refractory metal sputtering targets for semiconductor integrated circuits. Specifically, it relates to a method for preparing a tungsten sputtering target and the tungsten sputtering target prepared by this method. This invention uses a molding process to prepare a tungsten blank, which helps reduce waste caused by blank shaping and reduces workload. A vacuum pre-sintering process is then performed to obtain a tungsten blank with a certain strength, while simultaneously reducing the gas content of the sintered blank. Next, the pre-sintered tungsten blank is wrapped with tungsten foil, sealed in a sleeve, and then buried in sand for hot isostatic pressing (HIP) densification. During HIP, the sleeve material melts and mixes with the sand, reducing contamination of the tungsten blank by the sleeve at high temperatures. The dense tungsten foil layer protects the internal high-purity tungsten blank. Finally, machining yields a high-purity, fine-grained, and high-density tungsten sputtering target. This invention's preparation method helps solve the contradiction between density and grain size in tungsten sputtering targets, reduces the gas content of the tungsten sputtering target, and minimizes impurity contamination.

The present application relates to a tungsten oxide-based memristor preparation method and a target tracking system, wherein the tungsten oxide-based memristor preparation method comprises the following steps: cleaning indium tin oxide glass for a set time to obtain a bottom electrode; growing a tungsten target on the bottom electrode by direct current magnetron sputtering to obtain a tungsten oxide film and form a first resistance change layer; growing an indium gallium zinc oxide target on the first resistance change layer by radio frequency magnetron sputtering to obtain an indium gallium zinc oxide film and form a second resistance change layer; and obtaining a silver top electrode by covering a mask plate and direct current magnetron sputtering to form a top electrode. The performance of the memristor is stable, the preparation process is simple, the repeatability is high, the thin film uniformity is good, the multi-level resistance state regulation and the modulation of the memristor behavior can be easily realized by changing the preparation parameters and the test parameters, the target tracking system based on the memristor can realize the brain synapse bionic function, and can be widely applied to simulate the human brain to realize higher-level cognitive functions.

The invention provides a target assembly and a method for manufacturing the target assembly, and the target assembly can suppress the formation of intermetallic compound layers between an aluminum or aluminum alloy plate insertion material and a copper alloy back plate and between a tungsten target material and the insertion material, thereby preventing the reduction of bonding strength. Specifically, the present invention provides a target assembly obtained by sandwiching an aluminum or aluminum alloy plate insertion material between a target material containing tungsten or molybdenum and a copper or copper alloy backing plate and performing diffusion bonding, the target material and the insertion material and the back plate and the insertion material are diffusion bonded via a metal thin film layer, and the metal thin film layer contains Ti, V, Cr, Nb, Pd, Ir, Pt and an alloy containing at least one of these metals, and has a thickness of more than 0.1 [mu] m and 3.0 [mu] m or less.

The invention relates to the technical field of bolt manufacturing, in particular to a high-temperature-resistant and high-pressure-resistant bolt surface protection technology which comprises the following steps that after the surface of a high-temperature-resistant and high-pressure-resistant bolt is cleaned, the high-temperature-resistant and high-pressure-resistant bolt is loaded into a vacuum chamber, and argon ion bombardment cleaning is A chromium metal bonding layer is deposited on the surface of the high-temperature-resistant and high-pressure-resistant bolt; keeping a magnetron sputtering tungsten target, introducing acetylene gas into the vacuum chamber, and depositing a layer of gradient transition layer of which the composition is in smooth transition from pure tungsten to tungsten carbide on the surface of the chromium metal bonding layer of the high-temperature-resistant and high-pressure-resistant bolt; depositing a tungsten-silicon co-doped diamond-like functional layer on the gradient transition layer of the high-temperature-resistant and high-pressure-resistant bolt in mixed gas of acetylene and tetramethylsilane; and after deposition is finished, the high-temperature-resistant and high-pressure-resistant bolt is taken out after being cooled. The problems that the bolt is prone to seizure and poor in tolerance under high temperature and high pressure are effectively solved, and the service life of the high-temperature-resistant and high-pressure-resistant bolt is remarkably prolonged.

The application relates to the technical field of diamond-like carbon film preparation methods, and particularly discloses a diamond-like carbon film preparation method based on ion beam energy regulation, which comprises the following steps: S1, substrate pretreatment; S2, preparation of a metal transition layer; the metal transition layer is obtained by physically vapor depositing a main ion beam with an energy of 700-900 eV and bombarding a chromium target or a tungsten target at 80-220 DEG C for 0.5-2 hours on the surface of a substrate; S3, preparation of a surface modification layer; the surface modification layer is obtained by depositing a graphite target as a carbon source and introducing a fluorine-containing or tungsten-containing doping source on the surface of the metal transition layer through the graphite target bombarded by a main ion beam at 100-300 DEG C for 2-4 hours, wherein the main ion beam has an energy of 700-900 eV, a beam current of 63-81 mA and a beam current energy ratio of 0.09; and S4, low-temperature annealing. The diamond-like carbon film prepared by the method has strong adhesion to the substrate, low friction, high wear resistance, good mechanical properties and a long service life under harsh working conditions such as heavy load, impact and reciprocating friction.

The application discloses a preparation method of a stretchable flexible thermoelectric generator, and the preparation comprises the following steps: preparing a metal mask plate a and a stretchable polyimide substrate; using a magnetron sputtering method, tungsten and Bi 0.5 Sb 1.5 Te3 are simultaneously deposited on the polyimide substrate covered by the metal mask plate a, the tungsten target is connected to a radio frequency power supply, the power is 10 W, the Bi 0.5 Sb 1.5 Te3 target is connected to a direct current power supply, the power is 32 W, the cavity pressure of the magnetron sputtering device is lower than 5*10 ‑4 Pa, the doping temperature is 250 DEG C; the obtained thin film is used as a substrate b, a magnetron sputtering method is used, Bi2Te 2.7 Se 0.3 is deposited on the substrate b covered by the metal mask plate b, the Bi2Te 2.7 Se 0.3 target is connected to a direct current power supply, the power is 35 W, the cavity pressure of the magnetron sputtering device is lower than 2*10 ‑4 Pa, the sputtering temperature is 70 DEG C; the obtained thin film is used as a substrate c, a magnetron sputtering method is used, Au is deposited on the substrate c covered by the metal mask plate c in an Ar atmosphere, and finally the stretchable flexible thermoelectric generator is obtained.