101 results about "Tungsten target" patented technology

The invention provides a welding method of a tungsten target assembly, which comprises the following steps of: providing a tungsten target blank and a copper back plate between which an intermediate layer is additionally arranged; placing the tungsten target blank, the intermediate layer and the copper back plate in a vacuum sheath, so that the intermediate layer is positioned between the tungsten target blank and the copper back plate, and the vacuum sheath is placed in welding equipment; welding materials to be welded together by a hot isostatic pressing process to form the tungsten target assembly; and after the ompletion of welding, carrying out cooling, and removing the vacuum sheath to obtain the tungsten target assembly. By additionally arranging the intermediate layer between the tungsten target blank and the copper back plate and welding the tungsten target blank and the copper back plate together by utilizing the hot isostatic pressing process, the large-area welding can be realized, and the surface of the welding material can be prevented from being oxidized because the whole welding process is in a vacuum environment; and in addition, in the formed tungsten target assembly, the bond rate and the bond strength of the tungsten target blank and the copper back plate are higher, and the deformation is small after the tungsten target blank and the copper back plate are welded together.

The invention provides a standing wave electron linear accelerator comprising accelerating chamber, coupling resonator, electron gun, microwave coupler, nose cone, titanium getter pump, thermostatic water jacket and tungsten target, wherein the nose cone is canceled from the accelerating chamber to be arranged in the couple resonator, two nose cones are arranged for each couple resonator on the front and rear end surfaces of the couple resonator. The accelerator by the present invention lowers the radial electric field intensity in the accelerating chamber, and maximize the output dosage. íí

Disclosed is a manufacturing method of a tungsten target. The manufacturing method of the tungsten target comprises providing a tungsten target blank, wherein the tungsten target blank comprises a sputtering surface and a back surface; rough-grinding the sputtering surface and the back surface through a diamond grinding wheel; performing accurate semi-grinding on the sputtering surface and the back surface through the diamond grinding wheel; performing accurate grinding on the sputtering surface through the diamond grinding wheel. The manufacturing method of the tungsten target can reduce or avoid edge failure of the tungsten target blank during the machining process to obtain the tungsten target high in dimensional precision, low in surface roughness and capable of meeting the sputtering performance, and meanwhile, can reduce losses of tools during the machining process of the tungsten target blank and further reduce the machining cost of the tungsten target.

The invention discloses a two-step hot isostatic pressing diffusion welding method for a tungsten target assembly, and belongs to the technical field of magnetron sputtering target manufacturing. According to the welding method, hot isostatic pressing diffusion welding is carried out on a tungsten target blank and an Al intermediate layer, then secondary hot isostatic pressing diffusion welding iscarried out on the tungsten target blank and a copper back plate, finally, the tungsten target material assembly is obtained, and the welding strength of the tungsten target blank-Al intermediate layer welding face of the tungsten target material assembly is larger than or equal to 125 MPa, the welding strength of the Al intermediate layer-copper back plate welding face is larger than or equal to65 MPa, the welding-on rate of the two welding faces is larger than 99.5%, the overall deformation degree of the target material after welding is small, the target material is suitable for a high-power sputtering machine table, and it is guaranteed that desoldering and target falling are avoided in the sputtering process.

Provided is a tungsten sintered compact sputtering target, wherein the purity of the tungsten is 5N (99.999%) or more, and the content of impurity carbon in the tungsten is 5 wtppm or less. An object of the present invention is to decrease the specific resistance of a tungsten film sputter-deposited by using a tungsten sintered compact sputtering target by reducing a carbon content in the tungsten target.

The invention provides a tungsten target material welding method and a tungsten target material assembly, and relates to the technical field of semiconductor manufacturing. The method comprises the steps that a tungsten target material and a copper backboard are processed and cleaned before being welded; a flux guide part is positioned between the tungsten target material and the copper backboard;then the tungsten target material and the copper backboard are subjected to braze welding by a braze welding technology to obtain the tungsten target material assembly; and the tungsten target material assembly is cooled. According to the method, the flux guide part is positioned between the tungsten target material and the copper backboard before welding, so that fluxes can be uniformly distributed between the tungsten target material and the copper backboard, and as a result, the weld seam uniformity, the welding success rate and the welding stability can be improved.

The invention relates to a diffusion welding method for a tungsten target and a copper-zinc alloy back plate. The diffusion welding method comprises the following steps that (1) titanium film platingtreatment is conducted on the welding face, with the roughness Ra smaller than or equal to 3 micrometers, of the tungsten target, and then the tungsten target obtained after film plating is sequentially cleaned and dried; and (2) the tungsten target dried in the step (1) and the copper-zinc alloy back plate are assembled and then placed in a sheath, then the sheath is sequentially welded, vacuumized and degassed, hot isostatic pressing welding is conducted on the degassed sheath, and after hot isostatic pressing welding is completed, the sheath is dismounted to obtain a tungsten target assembly. An aluminum alloy middle layer is arranged between the tungsten target and the copper-zinc alloy back plate in the sheath. After titanium plating treatment is conducted on the welding face of the target under the specific roughness, effective welding of the target and the back plate is achieved, stress distribution of the welding face is uniform after welding, the welding bonding rate is largerthan or equal to 98%, the heat transfer performance between the target and the back plate is enhanced, and the service life is prolonged.

The invention provides a preparing method of a porous tungsten oxide film, which is characterized in that the preparing method comprises the following steps: adopting a tungsten-target and aluminum-target magnetic control co-sputtering technology to deposit tungsten and aluminum on a substrate to form an aluminum alloy film; dipping the obtained tungsten-aluminum alloy film into alkaline solutionfor selective corrosion and oxidation; and finally, obtaining the porous tungsten oxide film on the substrate. The porous tungsten oxide film prepared with the method has even aperture distribution, and the average aperture size is about 100nm. The invention has the following obvious advancement and originality of simple preparation, easy control of technological parameters, controllable porosityand aperture size and even aperture distribution. The product structure and the property thereof are very suitable for manufacturing electrochromic devices and air-sensitive devices.

The invention relates to a method for preparing Ag-Cu/W nanometer multilayer film solder for brazing stainless steel. The multilayer film solder contains 16.7 percent to 37.5 percent of silver, 12.5 percent to 33.3 percent of copper and 50 percent of tungsten. A silver-copper layer and a tungsten layer are alternately sputtered by utilization of a magnetron sputtering method. The silver-copper layer is sputtered by simultaneously sputtering a silver target and a copper target, and a tungsten target is used for independently sputtering. The thickness of each silver-copper layer is 8 nm to 14 nm, and the thickness of each W layer is smaller than 10 nm. The atom proportion of Ag to Cu in each silver-copper layer is (0.5 to 1) to (3 to 1). Alternating deposition is performed for 200 to 400 periods, so that the total thickness of a final film is 4 microns to 8 microns. The method provided by the invention has the advantages that the solder uniformity can be guaranteed; moreover, the solder thickness can be easily controlled through a sputtering period; the melting point of a nanometer particle is dramatically decreased by utilization of a melting point decreasing effect of the nanometer particle; during a brazing process, a reactive layer and a matrix can be formed into an eutectic structure with a low melting point or a hypo-eutectic structure with a low melting point, so that the brazing temperature is effectively lowered.

The invention provides a tungsten target diffusion welding structure and a tungsten target diffusion welding method, and relates to the technical field of semiconductor sputtering target manufacturing. The tungsten target diffusion welding structure comprises a tungsten target main body, a copper alloy back plate, a vacuum layer, a first middle layer and a second middle layer; the copper alloy back plate is provided with a containing groove, and the tungsten target main body, the vacuum layer, the first middle layer and the second middle layer are sequentially arranged in the containing groove; and the tungsten target diffusion welding structure is characterized in that the stress of the tungsten target main body and the copper alloy back plate is released through the first middle layer, diffusion welding of the copper alloy back plate and the first middle layer is guaranteed through the second middle layer, and finally cracking of the tungsten target main body during diffusion weldingis prevented through the vacuum layer, so that the technical problems that in the prior art, cracks are prone to occurrence in the welding process of the tungsten target main body, and diffusion between the tungsten target and the middle layers, and between the middle layers and the copper alloy is not prone to achieve are solved, the semiconductor sputtering target welding surface treatment is achieved, the HIP welding process of the tungsten target main body is realized, and the structure and the method are more practical.

The invention discloses a surface clad layer treatment method of a copper tungsten electrical contact material for an arc extinguish chamber. The method includes the steps that the copper tungsten alloy contact material is prepared to serve as a substrate material; mechanical buffing, washing and drying are carried out; the substrate material is placed into a vacuum chamber to deposit a chromium layer, a nickel layer or a titanium layer on a base body through a chromium target, a nickel target or a titanium target under the argon atmosphere; a copper target and a tungsten target are used for codeposition of a copper-tungsten clad layer on the substrate deposited with the chromium target, the nickel target or the titanium target continuously, and a copper tungsten-tungsten clad layer with a certain film thickness is obtained; and annealing is carried out under protection of a mixed atmosphere of inert gas and hydrogen, furnace cooling is carried out, a sample is taken out, and a copper tungsten electrical contact material surface clad layer is obtained. By means of the two-phase nanoscale uniform distributed structure, the ablation uniformity can be greatly improved, the ablation pit depth is reduced, and the service life is prolonged; meanwhile, a provided nanocrystalline tungsten framework can improve the arc ablation resistant capacity. By means of the method, equipment is simple and convenient to operate, the effect is obvious, and the good industrial application prospect is achieved.

The invention discloses a large-sized high purity tungsten target with the diameter of over 400mm for a semiconductor, wherein the purify can be over 99.999%, the compactness is over 99.5% and the grain size is less than or equal to 100 mu m. The preparation method comprises the following steps: uniformly mixing tungsten powder with the purify over 99.999% and the grain size of 2.2-2.6 mu m; compression moulding by isostatic cool pressing at 180-250MPa for 5-10 minutes; carrying out middle frequency induction sintering for 8-12 hours at 2300-2400 DEG C; after annealing for 90-180 minutes at 1450-1550 DEG C, carrying out multi-pass hot rolling to 5-15mm thick, wherein the total deformation of hot rolling is greater than 60%; and then, after annealing for 90-150 minutes at 1300-1400 DEG C and machining, wherein the machining amounts of the upper and lower surfaces are greater than or equal to 1.5mm. Finally, the obtained tungsten target is not only excellent in performance, but also relatively simple in process and low in equipment requirement.

A tungsten target manufacturing method comprises the steps of providing tungsten powder; adopting a hot pressing process to perform sintering forming of the tungsten powder, and forming tungsten target blank; and after sintering forming, adopting a hot isostatic pressing process to enable the tungsten target blank to be subjected to densifying processing to form a tungsten target. The tungsten target with the full density of over 99.4% can be manufactured through the tungsten target manufacturing method; and the uniformity of the internal organizational structure and the grain size of the tungsten target meet a sputtering process with the requirement higher and higher.

The invention provides a display method of a target material metallographic structure. The display method comprises the following steps: providing a tungsten target material; cutting a part of the tungsten target material as a test sample; performing surface treatment on the test sample, and forming at least one polished surface; corroding the polished surface of the test sample by adopting etching agent formed by hydrogen peroxide and ammonia water; and performing metallographic observation on the test sample by adopting a metallographic microscope. The etching agent formed by the hydrogen peroxide and the ammonia water is stable in reaction and good in corrosion effect, and the crystal boundary morphology of the corroded test sample is clear, so that the metallographic structure of the test sample is good in display effect, and the observation on the metallographic structure by adopting the metallographic microscope is facilitated.

The invention discloses a preparation method of a high-density fine-grain easy-to-form W target material, which belongs to the technical field of magnetron sputtering target material manufacturing. The W target material is preformed in a cold pressing mode to obtain a preformed W target blank, and the relative density of the preformed W target blank is 60%-70%; then the preformed W target blank issubjected to hot isostatic presssure sintering densification to obtain a densified W target blank, and the relative density of the densified W target blank ranges from 93% to 96%; and finally, the Wtarget material is subjected to sheath-free secondary hot isostatic pressure sintering densification, the density of the prepared W target material is greater than 99%, the average grain size is lessthan 20 microns, and the yield is greater than 95%. The W target material is low in forming cracking probability, high in yield, simple in process and easy to operate, secondary hot isostatic pressuresintering densification is achieved, the sintering temperature in the hot isostatic pressure process can be reduced, and the tungsten target material with fine grains is obtained.

The invention discloses a method for preparing column-shaped nano-tungsten. The method enables tungsten to grow on a graphite substrate in a tilted column shape, and can be used for studying the radiation performance of a first wall material. The method mainly comprises the following steps of: (1) manufacturing a sample rack, namely manufacturing a cylinder, and clamping four substrates at different angles inside the cylinder for simultaneously sputtering; (2) preparing the graphite substrate, namely preparing the graphite substrate with the size of 1cm*1cm, and washing the substrate to a certain extent; and (3) preparing the column-shaped nano-tungsten by a direct-current magnetron sputtering glancing angle deposition method, namely sputtering a pure tungsten target material on the graphite conductive substrate by changing the included angle alpha between the normal direction of the substrate and an incident particle flow so as to prepare a column-shaped nano-tungsten membrane.

Provided is a tungsten sintered compact sputtering target containing iron as an impurity in an amount of 0.8 wtppm or less, and remainder being tungsten and other unavoidable impurities, wherein a range of iron concentration in a target structure is within a range of ±0.1 wtppm of an average concentration. Additionally provided is a tungsten sintered compact sputtering target according to claim 1 or claim 2, wherein a relative density of the target is 99% or higher, an average crystal grain size is 50 μm or less, and a crystal grain size range is 5 to 200 μm. The present invention aims to inhibit abnormal grain growth in the tungsten target by reducing the amount of iron in the tungsten sintered compact sputtering target.

The invention provides a diffusion welding method for a tungsten target material and a copper back plate. The diffusion welding method comprises the following steps that accurate grinding and PVD film plating are sequentially carried out on the welding face of the tungsten target material, and polishing treatment is carried out on the non-welding face of the tungsten target material; PVD film plating is carried out on the welding surface of the copper back plate; and the tungsten target material, the welding surface and the middle layer are assembled, and sequentially subjected to sheath welding and hot isostatic pressing welding. According to the diffusion welding method for the tungsten target material and the copper back plate, the bonding performance of the tungsten target and the copper back plate can be improved, and the problem that the bonding capacity of the tungsten target and the copper back plate is insufficient is solved.

The invention discloses a method of manufacturing a chemical vapor deposition high-purity tungsten sputtering target material. The method comprises the following steps that (1) raw materials are prepared, tungsten hexafluoride which is in gaseous state at normal temperature and normal pressure is taken as a raw material; (2) the high-purity metal tungsten is prepared, the tungsten hexafluoride isreduced into the high-purity metal tungst by using a reducing gas through chemical vapor deposition equipment, the tungsten hexafluoride is reduced into high-purity metal tungsten by using the reducing gas; and (3) and the high-purity metal tungsten obtained in the step (2) is deposited on a matrix material, a one-step method is used for producing the high-purity tungsten target material or the tungsten target material blank material. According to the method, the problems that an existing tungsten target material is low in purity and not easy to process, the surface is easy to pollute, the quality consistency is poor are solved, the vapor deposition reaction is a continuous gaseous reaction, the reaction process is uniform, and the product consistency is good; the one-step method is adopted to prepare the tungsten target material, secondary machining pollution is avoided, it is beneficial to guaranteeing the quality of the tungsten target product, and the production cost is low.