Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Tungsten target material welding method and tungsten target material assembly

A welding method and target technology, applied in welding equipment, welding/welding/cutting items, manufacturing tools, etc., can solve the problems of low welding success rate, poor weld uniformity, and poor welding stability, and improve the welding success rate. , The effect of reducing welding deformation and improving welding stability

Inactive Publication Date: 2018-09-18
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the purpose of the embodiments of the present invention is to provide a tungsten target welding method to solve the problems of poor weld uniformity, low welding success rate and poor welding stability in the above-mentioned existing tungsten target welding methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tungsten target material welding method and tungsten target material assembly
  • Tungsten target material welding method and tungsten target material assembly
  • Tungsten target material welding method and tungsten target material assembly

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0027] The applicant found that in the existing tungsten target welding method, the tungsten material and the back plate material must be welded together to be processed into the target material used for the semiconductor, and the thickness of the commonly used back plate is relatively thin, which is easy to It causes large welding deformation during welding, which affects the use effect of tungsten targets. Please refer to figure 1 , figure 1 A schematic structural view of a tungsten target produced by a traditional tungsten target welding method is shown. Among them, the tungsten target is the back plate of the sputtering target, that is, the material used as the cathode in the sputtering deposition technology. The cathode material is detached in the form of molecules, atoms or ions under the impact of positively charged cations in the sputtering machine. Cathode redeposited on the surface of the anode. Since the metal sputtering target is often a relatively expensive mat...

no. 2 example

[0046] Please refer to Figure 4 , Figure 4 It is a flow chart of another tungsten target welding method provided by the second embodiment of the present invention. The specific steps of the tungsten target welding method provided in this embodiment are as follows:

[0047] Step S10: Processing and cleaning the tungsten target and the copper back plate before welding, engraving threads on the welding surface of the copper back plate when processing the copper back plate before welding;

[0048] Step S20: placing a solder drain piece between the tungsten target and the copper back plate.

[0049] Step S30: using a brazing process to braze the tungsten target and the copper back plate to obtain a tungsten target assembly.

[0050] Step S40: cooling the tungsten target assembly.

[0051] Different from the tungsten target welding method provided in the first embodiment of the present invention, step S10 of the tungsten target welding method provided in this embodiment engrav...

no. 3 example

[0053] Please refer to Figure 5 , Figure 5 It is a schematic structural diagram of a tungsten target assembly provided by the third embodiment of the present invention.

[0054] It should be understood that the present invention also provides a tungsten target assembly made by using the tungsten target welding method of the present invention. The thickness of the tungsten target part of the tungsten target assembly is 5.8692 mm, and the flatness is 0.1 mm; the thickness of the copper back plate part of the tungsten target assembly is 4 mm, and the flatness is 0.2 mm.

[0055] To sum up, the embodiment of the present invention provides a tungsten target welding method and a tungsten target assembly. The tungsten target welding method combines the tungsten target and the copper back plate before welding the tungsten target and the copper back plate. At least one copper wire is placed in the middle of the copper back plate to make the solder distribution between the tungsten ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a tungsten target material welding method and a tungsten target material assembly, and relates to the technical field of semiconductor manufacturing. The method comprises the steps that a tungsten target material and a copper backboard are processed and cleaned before being welded; a flux guide part is positioned between the tungsten target material and the copper backboard;then the tungsten target material and the copper backboard are subjected to braze welding by a braze welding technology to obtain the tungsten target material assembly; and the tungsten target material assembly is cooled. According to the method, the flux guide part is positioned between the tungsten target material and the copper backboard before welding, so that fluxes can be uniformly distributed between the tungsten target material and the copper backboard, and as a result, the weld seam uniformity, the welding success rate and the welding stability can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a tungsten target welding method and a tungsten target assembly. Background technique [0002] With the large-scale entry of microelectronic equipment into people's lives, the semiconductor manufacturing industry has also begun to develop rapidly. In integrated circuits, tungsten targets are used for PVD coating, and magnetron sputtering is used in the sputtering process of tungsten targets. Copper material with high thermal conductivity and high conductivity is used as the back plate material, so the tungsten material and the back plate material must be welded together to be processed into the target material used in the semiconductor, which can be reliably installed on the sputtering machine, At the same time, under the action of magnetic field and electric field, the tungsten target can be effectively controlled for sputtering. [0003] The tungsten target...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B23K1/00B23K1/20B23K103/18
CPCB23K1/0008B23K1/20B23K1/206
Inventor 姚力军潘杰王学泽吴豪杰
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com