Tungsten target diffusion welding structure and tungsten target diffusion welding method

Abstract

The invention provides a tungsten target diffusion welding structure and a tungsten target diffusion welding method, and relates to the technical field of semiconductor sputtering target manufacturing. The tungsten target diffusion welding structure comprises a tungsten target main body, a copper alloy back plate, a vacuum layer, a first middle layer and a second middle layer; the copper alloy back plate is provided with a containing groove, and the tungsten target main body, the vacuum layer, the first middle layer and the second middle layer are sequentially arranged in the containing groove; and the tungsten target diffusion welding structure is characterized in that the stress of the tungsten target main body and the copper alloy back plate is released through the first middle layer, diffusion welding of the copper alloy back plate and the first middle layer is guaranteed through the second middle layer, and finally cracking of the tungsten target main body during diffusion weldingis prevented through the vacuum layer, so that the technical problems that in the prior art, cracks are prone to occurrence in the welding process of the tungsten target main body, and diffusion between the tungsten target and the middle layers, and between the middle layers and the copper alloy is not prone to achieve are solved, the semiconductor sputtering target welding surface treatment is achieved, the HIP welding process of the tungsten target main body is realized, and the structure and the method are more practical.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor sputtering targets, in particular to a tungsten target diffusion welding structure and a tungsten target diffusion welding method. Background technique [0002] Tungsten targets for semiconductor sputtering generally require copper alloy materials with higher strength and higher electrical conductivity as the back plate to be welded to them. Tungsten material is a brittle material, which is prone to cracks in case of impact or large deformation, while the copper alloy back plate is a material with a large expansion coefficient. If it is directly welded with a tungsten target, it will Because of the large difference in expansion coefficient between the two, stress deformation occurs in the product, which leads to cracks in tungsten. Moreover, it is more difficult for the tungsten target to diffuse directly with the copper alloy backplane. [0003] Since the tungsten target mat...

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Problems solved by technology

[0005] The object of the present invention is to provide a tungsten target material diffusion welding structure and a tungsten target material diffusion welding method to alleviate the cracks that are prone to occur during the welding process of the tungsten target material body existing in the prior art, and the tungsten target material and the intermediate layer, the intermediate layer The technical problem that it is not easy to diffuse between copper and copper alloys

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