945results about How to "Crack suppression" patented technology

An object is to provide a manufacturing method of a semiconductor device in which a defect in characteristics due to a crack occurring in a semiconductor device is reduced. Provision of a crack suppression layer formed of a metal film in the periphery of a semiconductor element makes it possible to suppress a crack occurring from the outer periphery of a substrate and reduce damage to the semiconductor element. In addition, even if the semiconductor device is subjected to physical forces from the outer periphery in separation and transposition steps, progression (growth) of a crack to the semiconductor device can be suppressed by the crack suppression layer.

The present invention is vertical semi-continuous light alloy casting process and apparatus with cooperation of power ultrasonic field and low frequency electromagnetic field. During casting, one low frequency electromagnetic field acting on the surface of metal molt and one power ultrasonic field acting on the crystallizer axis part are applied simultaneously. The present invention can reduce the transverse temperature gradient in casting blank solidification, alter liquid hole shape, raise the homogeneity of the casting blank and raise casting blank quality.

A flexible display device includes a display panel including a first surface including a display area configured to display an image, and a second surface disposed on the opposite side of the display panel from the first surface, and a touch panel disposed on the first surface, the touch panel including a base film and a transparent conductive layer disposed on a surface of the base film facing the display panel, in which at least a portion of each of the display panel and the touch panel is bendable such that centers of curvature of the display panel and the touch panel are positioned outside the second surface.

Disclosed is a flexible display substrate. The flexible display substrate comprises a flexible substrate, and a gate, a source, a drain and multiple conductive wires arranged on the flexible substrate; multiple grooves are formed in each conductive wire in a bending region of the flexible display substrate, so that the damage resistance of the conductive wires is improved in bending; and consequently, the bending resistance effect of the flexible display substrate is improved, and the reliability and service life of the flexible display substrate and a display apparatus are improved and prolonged. The invention also discloses the display apparatus comprising the flexible display substrate and a manufacturing method for the flexible display substrate.

The invention discloses a method for preparing a silicon carbide ceramic impeller through gel casting and pressureless sintering, and provides a preparation method of a pressureless sintered silicon carbide ceramic impeller with a complex and accurate shape characteristic and an external diameter size capable of reaching over 160 mm. A silicon carbide solid-phase sintering formula system of a boron-containing sintering auxiliary agent and a gel casting and pressureless sintering process are adopted; and the method comprises eight steps of: preparing ceramic slurry; performing injection molding; demolding; drying; machining; degumming; performing pressureless sintering; and machining. According to the method, the technical problems of non-uniform mixing of large-scale ceramic slurry in gel casting, dryness, crack and deformation in a pressureless sintering process and the like are solved, and finally, preparation of the pressureless sintered silicon carbide ceramic impeller is realized. The impeller has good performance such as corrosion resistance, wear resistance, high temperature resistance and the like, and can be widely applied to a centrifugal pump for corrosive liquid conveying of various industries.

Embodiments provide a lens moving apparatus including a bobbin including a first coil disposed on an outer circumferential surface thereof, a housing provided with first and second magnets for moving the bobbin by interaction with the first coil, upper and lower elastic members each coupled to both the bobbin and the housing, and a first position sensor for detecting a sum of intensities of magnetic fields of the first and second magnets, wherein the first position sensor is disposed in a space between the first magnet and the second magnet when the bobbin is disposed at an initial position.

The invention discloses a preparation method of a low stress state composite substrate for GaN growth. The preparation method comprises that a GaN monocrystal epitaxial layer is prepared on a sapphire substrate; a stress compensation layer is deposited at the back side of a thermally and electrically conductive transfer substrate of high welding point; bonding dielectric layers of high welding point are prepared at the surfaces of a GaN epitaxial wafer and the transfer substrate respectively; the GaN epitaxial wafer is bonded to the thermally and electrically conductive substrate by the high-temperature diffusion bonding technology; and the composite substrate with high temperature stability and low stress state for GaN growth is obtained. According to the composite substrate of the invention, homoepitaxy can be realized and a vertical structural device can be directly prepared as a traditional composite substrate, the low stress state and high-temperature stability can be also realized, and the quality of subsequent GaN epitaxial growth and chip preparation can be effectively improved.

The invention relates to a seamless steel tube for manufacturing a hollow core rod and a production method. The seamless steel tube comprises the following components in percentage by mass: 0.28 to 0.33 percent of C, 0.45 to 0.65 percent of Si, 0.40 to 0.60 percent of Mn, less than or equal to 0.025 percent of P, less than or equal to 0.02 percent of S, 3.00 to 3.30 percent of Cr, 0.45 to 0.55 percent of Mo, 0.20 to 0.30 percent of V, less than or equal to 0.15 percent of Cu, less than or equal to 0.20 percent of Ni, and the balance of Fe and unavoidable impurities. The production method comprises the following steps of: blanking a tube blank, heating by using an annular furnace, punching by using a Mannesmann piercing mill, rolling the tube by using a pilger mill, cutting a pilger head, heating by using a walking beam furnace, sizing by using a sizing mill, performing heat treatment, straightening, sawing, performing internal and external surface treatment, performing manual inspection, performing ultrasonic wave and eddy current automatically combined flaw detection, performing manual reinspection, cleaning, identifying and packaging, and warehousing.

An electronic device includes the electronic element, the interposer substrate, on one surface of which the electronic element is mounted, and the interconnection substrate, on one surface of which the interposer substrate is mounted. One portion of the connection parts is an electrical connection part that electrically interconnects the interposer substrate and the interconnection substrate. The remaining portion is a dummy connection part that produces no functional deficiency even when the dummy connection part does not electrically interconnect the interposer substrate with the interconnection substrate. The dummy connection part includes at least one of the connection parts that at least partially overlap with the electronic element in a plan projection and are preferably arranged along an outer rim of the plan projection of the electronic element.

The invention discloses a submerged nozzle for a sheet billet continuous casting crystallizer, which comprises an upper end and a transition section, wherein the transition section is positioned below the upper end, the transition section is in the shape of a cylindrical constant section, and an upper flat section and a lower flat section are positioned below the transition section; a first guide plate and a second guide plate which are symmetrical are arranged under the lower flat section, two nozzle outlets are formed between the lower end of the lower flat section and the first guide plate and between the lower end of the lower flat section and the second guide plate, and the first guide plate and the second guide plate are cuboid; and a conical flow splitting body is arranged at the middle position below the first guide plate and the second guide plate. The two guide plates are added into the submerged nozzle to perform the action of changing the angle and the speed of molten steel flowing out of the nozzle, so that the liquid level of the crystallizer keeps stable at a high flow speed to achieve the uniform distribution of protective slag, thereby effectively preventing slag entrapment and inhabiting the generation of cracks on a casting blank; and the molten steel can uniformly flow in the crystallizer and achieve reasonable liquid level speed and protective slag coverage.

A sintered body of silver fine particles for a bonding member to bond components of a semiconductor device, wherein an activation energy for creep of the sintered body of the silver fine particles is from 0.4 to 0.75 times that of an activation energy for a lattice diffusion of bulk silver.

The invention discloses a tetraethylorthosilicate inorganic high-temperature-resistant coating. The tetraethylorthosilicate inorganic high-temperature-resistant coating comprises the following components in percentage by mass: 28-35% of tetraethylorthosilicate, 35-50% of heat-resistant pigment and filler, 2%-4% of additives and 13-18% of dimethylformamide, wherein the heat-resistant pigment and filler comprises nano-silicon dioxide, a blocking type functional filler and aluminum powder in the mass ratio of 1.5 to 1 to 1. The invention further designs a preparation method of the tetraethylorthosilicate inorganic high-temperature-resistant coating. According to the tetraethylorthosilicate inorganic high-temperature-resistant coating and the preparation method thereof designed by the invention, the adhesion and the hardness of a cured film formed after heat curing of the coating can be significantly improved along with increase in temperature, the adhesion achieves grade one, the pencil hardness is more than 6H, the high temperature above 800 DEG C can be resisted and the cracking tendency of the coated film is greatly reduced.

The invention provides a design method of a water blocking device for semi-continuous casting of hard aluminum alloy, the water blocking device comprises a water baffle plate body and springs, a divided structure is adopted in the water baffle plate body, all the parts are connected by the springs, the whole water blocking device is suspended under a crystallizer by a hinge or is directly supported on a casting platform, the part of the water baffle plate body which is contacted with the surface of a cast ingot is provided with a polymer material, and the working surface of the water baffle plate body is perpendicular with the surface of the cast ingot or forms a certain angle with the surface of the cast ingot. When in application, the outer surface of the cast ingot is tightly clamped at the same time of not obstructing the casting process, the secondary cooling water of the semi-continuous casting is blocked and shunted at the position of the water baffle plate, the cast ingot only receives part of the water cooling between the crystallizer and the water baffle plate, the lower part of the water baffle plate is carried out the natural air cooling; the cast ingot is repeatedly heated by a high temperature melt of the core part of the cast ingot, thus realizing the self-tempering effect of the cast ingot, effectively reducing the casting internal stress, preventing the cracks of the cast ingot and being applicable to the application of large-scale industrial production.

The invention provides a method for preparing a steel-aluminum dissimilar metal overlap joint by adopting the CMT technology. The method comprises the following steps: an aluminum alloy plate is placed on a galvanized steel plate in an overlap manner and fixed by utilizing a fixture, wherein the overlap amount ranges between 5 mm and 20 mm; and a CMT welding machine is utilized, a welding gun is inclined towards the aluminum alloy plate to form an angle of 1-45 degrees with the vertical direction, the welding gun is inclined towards the forward direction by 5-30 degrees, the perpendicular distance between the welding gun and the galvanized steel plate is 10-20 mm, and the welding speed is 0.4-1.0 m/min. According to the method provided by the invention, the CMT technology is improved based on an original MIG welding power source, thereby converting molten droplet transfer into cold metal transfer, and reducing the metal spatter when the heat input during a welding process is reduced; and accordingly, the method is very suitable for welding of the aluminum alloy plate and the galvanized steel plate.

The invention relates to a catheter. The occurrence of kinking is reduced, a proximal portion of a sheath exhibits steerability and the occurrence of a crack is suppressed. The catheter comprises a sheath to be inserted into a living body, wherein the sheath includes a tubular reinforcement layer of at least one layer, which is formed with a spiral slit continuous from the distal side to the proximal side thereof; a termination end of the spiral slit is provided on the proximal side of the slit proximal portion at the site of the proximal side of the spiral slit; and at the same time, there is formed a slit termination portion in which inclination angle of the spiral slit with respect to the circumferential direction of the reinforcement layer is larger than that of the slit proximal portion.

The invention provides a method for preparing a TiAl alloy structural member by selective laser melting, which comprises the steps of 1) drying and heating gas atomization TiAl powder; 2) clamping a base plate on a working platform after being processed, and preheating the base plate; 3) drying and heating an inert protective gas, and then filling the inert protective gas into a working room, wherein the oxygen content of the working room is reduced to 0.01% or below; 4) preparing according to a mode of scanning the TiAl powder by means of low power laser pre-sintering, high-power laser melting and low power laser heat preservation layer by layer by using a selective laser melting technology until a forming member is completely processed; and 5) slowing cooling the forming member to the room temperature in a vacuum environment. The TiAl alloy structural member is prepared according to the procedures of low power laser scanning pre-sintering, high power laser scanning melting and low power laser scanning heat preservation and slow cooling, so that the temperature gradient and internal stress in the forming process of the structural member are greatly reduced, the generation of cracks is effectively inhibited, and a TiAl alloy sample with high density and good comprehensive performance is obtained.

An element body of a rectangular parallelepiped shape includes a principal surface arranged to constitute a mounting surface, a pair of side surfaces opposing each other and adjacent to the principal surface, and a pair of end surfaces opposing each other and adjacent to the principal surface and the pair of side surfaces. An external electrode includes a sintered metal layer disposed on an end portion of the element body, and a conductive resin layer including a portion positioned on the principal surface and a portion positioned on the sintered metal layer. An end edge of the sintered metal layer is positioned closer to the end surface than a maximum thickness position of the portion positioned on the principal surface. A thickness of the conductive resin layer gradually decreases from the maximum thickness position to the portion positioned on the sintered metal layer.

Provided are: a silicon block grinding/polishing device comprising a grinding function capable of grinding a square column-shaped silicon block within tolerance ranges of +-0.5 mm for the cross-section dimensions thereof and +-0.1 DEG for the perpendicular angles thereof, said block having been formed by cutting a silicon ingot using a wire saw, and comprising a polishing function capable of removing micro cracks in the surface layer of the cut silicon block (W); and a processing method therefor. The device comprises: a holding means (1) that holds the silicon block (W); a measuring means (2) that measures the cross-section dimensions of the silicon block (W); a grinding means (3) that grinds the planar sections (F) and the angular sections (C) of the silicon block (W); a polishing means (4) that polishes the planar sections (F) and the angular sections (C) of the silicon block (W) which has completed grinding and removes micro cracks; a transfer means (5) that transfers the holding means (1) holding the silicon block (W), between the measuring means (2), the grinding means (3), and the polishing means (4); and a control means (6) that operates each of the means.

The invention discloses an asphalt concrete steel bridge pavement structure comprising a steel bridge (7) derusted by sandblast, an anticorrosive coating (6), a binding layer (5), high-viscosity asphalt embedded compact granular composition concrete bottom layer (3), an oil sticking layer (2) and a high-viscosity asphalt embedded and compact granular composition concrete top layer (1) which are arranged from bottom to top; and furthermore, the invention also provides a pavement method of the asphalt concrete steel bridge pavement structure. According to the asphalt concrete steel bridge pavement structure, the high-viscosity asphalt embedded compact granular composition concrete layers are used as main pavement layers, so that concrete has favorable interlayer binding force and deformation following performance, the generation of cracks can be restrained, so that the whole steel bridge pavement structure has the advantages of favorable track resistance and water seepage resistance.