The application discloses a preparation process of low-agglomeration SiC water-based
granulation powder suitable for
pressureless sintering, and belongs to the technical field of
silicon carbide powder granulation. In view of the defects of the existing water-based
granulation process, such as hydrophilic agglomeration of SiC
powder, poor stability of
slurry, insufficient
sintering activity of granulation powder and inability to meet the densification requirement of
pressureless sintering, the micron-sized SiC powder is first subjected to
surface modification by using
argon-
oxygen mixed
plasma to control the polarity of the surface hydrophilic group; then, an environmentally-friendly water-based
system slurry is prepared, and full-component uniform dispersion is realized by combining graded variable-particle-size SiC
grinding balls and intermittent
temperature control ball milling; the
spray granulation temperature field parameters are optimized, and screening classification and low-temperature
inert calcination are matched to remove organic residues. The granulation powder prepared by the process has high
sphericity, excellent fluidity and extremely low agglomeration rate, the uniformity of the mixture of the powder and
sintering additives is greatly improved, the initial temperature of
pressureless sintering is significantly reduced, and the
holding time is shortened, and finally, the density of the pressureless sintered SiC
ceramic is greater than or equal to 96%, and the process is suitable for large-scale production of
semiconductor structure ceramics.