Preparation method of high-toughness boride-carbide composite ceramic
A technology of composite ceramics and borides, which is applied in the field of preparation of boride-carbide composite ceramics, can solve the problems of high production cost, poor mechanical properties and high pressure of boride-carbide composite ceramics, and achieve crystallization Uniform particle size and distribution, excellent comprehensive mechanical properties, and reduced production costs
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specific Embodiment approach 1
[0017] Specific Embodiment 1: This embodiment is a preparation method of high-toughness boride-carbide composite ceramics, which is realized through the following steps: 1. Weigh 20% to 80% of boride and 20% to 20% by weight percentage 80% carbide, then add the weighed boride and carbide into the dispersion medium, and mix uniformly to obtain a mixed powder. The dispersion medium is ethanol or acetone with a concentration of not less than 98% by volume; Dry the obtained mixed powder at 100°C-150°C for 10-48 hours, then put the dried mixed powder into a ball mill, add polyvinyl alcohol dispersant, and then ball-mill in an argon protective atmosphere for 6-48 hours, The mixed powder after ball milling is passed through a 200-mesh sieve to obtain a uniformly mixed nano-scale composite powder; 3. The nano-scale composite powder obtained in step 2 is pressed into a billet under a pressure of 150-250 MPa, and then the billet is subjected to two-stage non-toxic Pressure sintering: un...
specific Embodiment approach 2
[0023] Specific embodiment two: the difference between this embodiment and specific embodiment one is that the boride in step one is a transition metal boride, and the carbide is boron carbide (B 4 C), silicon carbide (SiC) or transition metal carbide, wherein the transition metal boride is selected from one of the IV~VI subgroups of the periodic table, and the transition metal in the transition metal carbide is selected from IV of the periodic table One of the ~VI subfamily. Other steps and parameters are the same as those in Embodiment 1.
specific Embodiment approach 3
[0024] Specific embodiment three: the difference between this embodiment and specific embodiment one is that the boride in step one is titanium diboride (TiB 2 ), zirconium diboride (ZrB 2 ), hafnium diboride (HfB 2 ), vanadium diboride (VB 2 ), niobium diboride (NbB 2 ) or tantalum diboride (TaB 2 ); the carbide is boron carbide (B 4 C), silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC) or tantalum carbide (TaC). Other steps and parameters are the same as those in Embodiment 1.
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