Multi-component doping high-performance beryllium oxide ceramic material and preparation method

A high-performance technology of beryllium oxide ceramics, which is applied in the field of multi-doped beryllium oxide ceramic materials and preparation technology, can solve the problems of unsatisfactory thermal conductivity and high sintering temperature of ceramic materials, and achieve less pores, uniform grain size, The effect of simple process

Inactive Publication Date: 2008-05-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most beryllium oxide ceramic materials containing dopants use mono- or binary dopants, that is, only Al 2 o 3 , MgO or SiO 2 One or two dopants in the dopant, the sintering temperature of the beryllium oxide ceramic material doped with this one-element or binary dopant is high, and the thermal conductivity of the ceramic material is not ideal, and the thermal conductivity at room temperature is usually 240W / m·k or less

Method used

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  • Multi-component doping high-performance beryllium oxide ceramic material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] By weight percentage MgO (5 ~ 40wt%), Al 2 o 3 (25~55wt%), CaO: (0.1~5wt%), Y 2 o 3 (0.01~0.5wt%) can be converted into Mg(NO 3 ) 2 , Al(NO 3 ) 3 , Ca(NO 3 ) 2 , Y 2 o 3 According to the calculated amount, accurately weigh the Mg(NO 3 ) 2 , Al(NO 3 ) 3 , Ca(NO 3 ) 2 , Y 2 o 3 Dissolve in concentrated nitric acid, heat and evaporate the solvent to obtain reaction mixed solution A, and control the temperature of solution A (65°C-95°C). By weight percent SiO 2(10~65wt%), accurately measure tetraethyl orthosilicate, stabilizer, dehydrated alcohol and mix uniformly in proportion (stabilizer adopts acetylacetone, tetraethyl orthosilicate: ethanol range 2: 1~1: 3; Ethyl tetrasilicate: stabilizer ranges from 5:1 to 5:2 to obtain mixed solution B. When A solution is heated and concentrated to a certain extent (about 1.5 times the volume of B solution), A is poured into B and continuously Stir to make it fully react. Put the sol in an oven, adjust the temperat...

Embodiment 2

[0036] By weight percentage MgO (5 ~ 40wt%), Al 2 o 3 (1~5wt%), ZnO: (0~0.5wt%), La 2 o 3 (0.01~0.5wt%), can be converted into Mg(NO 3 ) 2 , Al(NO 3 ) 3 , Zn(NO 3 ) 2 , La 2 o 3 According to the calculated amount, accurately weigh the Mg(NO 3 ) 2 , Al(NO 3 ) 3 , Zn(NO 3 ) 2 , La 2 o 3 Dissolve in concentrated nitric acid, heat and evaporate the solvent to obtain reaction mixed solution A, and control the temperature of solution A (65°C-95°C). By weight percent SiO 2 (10~65wt%), accurately measure tetraethyl orthosilicate, stabilizer, dehydrated alcohol and mix uniformly in proportion (stabilizer adopts acetylacetone, tetraethyl orthosilicate: ethanol range 2: 1~1: 3; Ethyl tetrasilicate: stabilizer ranges from 5:1 to 5:2 to obtain mixed solution B. When A solution is heated and concentrated to a certain extent (about 1.5 times the volume of B solution), A is poured into B and continuously Stir to make it fully react. Put the sol in an oven, adjust the tempe...

Embodiment 3

[0038] By weight percentage MgO (5 ~ 40%), Al 2 o 3 (0~5wt%), CaO: (0.1~0.5wt%), La 2 o 3 (0.01~0.5wt%), can be converted into Mg(NO 3 ) 2 , Al(NO 3 ) 3 , Ca(NO 3 ) 2 , La 2 o 3 According to the calculated amount, accurately weigh the Mg(NO 3 ) 2 , Al(NO 3 ) 3 , La 2 o 3 Dissolve in concentrated nitric acid, heat and evaporate the solvent to obtain reaction mixed solution A, and control the temperature of solution A (65°C-95°C). By weight percent SiO 2 (10~65wt%), accurately measure ethyl orthosilicate, stabilizer, dehydrated alcohol and mix uniformly in proportion (stabilizer adopts ethylene glycol ether, orthosilicate: ethanol range 2: 1~1: 3; Orthosilicate: stabilizer ranges from 1:1 to 1:2 to obtain mixed solution B. When solution A is heated and concentrated to a certain extent (about 1.5 times the volume of solution B), pour A into B , Stir continuously to make it fully react. Put the sol into the oven, adjust the temperature to 50-130°C, form a gel aft...

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Abstract

The invention belongs to the technical field of electronic materials. Multi-element doped high-performance beryllium oxide ceramic material, in addition to beryllium oxide, also includes 0.2-0.6% by mass of multi-element dopant; said multi-element dopant is composed of MgO, Al2O3, SiO2, CaO, ZnO and rare earth oxides , the mass percentage content of each component is: MgO: 5-60%, Al2O3: 0-40%, SiO2: 20-95%, CaO: 0.1-0.5%, ZnO: 0-0.5%, containing Y, La, Single or random mixed rare earth oxides of Ce or Sm: 0.01-0.5%. The multi-element dopant is prepared by a sol-gel method, and then mixed with a high-purity beryllium oxide raw material, shaped and sintered at a high temperature to obtain the multi-element doped high-performance beryllium oxide ceramic material of the present invention. The multi-component doped high-performance beryllium oxide ceramic material provided by the invention has lower sintering temperature, higher density, thermal conductivity and mechanical properties; its microstructure has the characteristics of compactness, uniform crystal grains and few pores. The preparation method has simple process, low production cost and good repeatability, and is suitable for industrialized production.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to a multi-component doped beryllium oxide ceramic material and a preparation process. Background technique [0002] Beryllium oxide ceramic materials have the characteristics of high thermal conductivity, high melting point, high strength, high insulation, high chemical and thermal stability, low dielectric constant, low dielectric loss and good process adaptability. , Microelectronics and optoelectronics technology have been widely used. [0003] High-grade heat dissipation elements and parts made of beryllium oxide ceramics with high thermal conductivity are mainly used in microwave, millimeter wave, high-power, high-packing density electronic components or components to conduct heat energy generated in high-power devices in a timely manner. It can better carry the heat conduction function, so as to ensure the stability and reliability of the device, whi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/08C04B35/622
Inventor 钟朝位张树人周晓华吴孟强
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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