406results about How to "Uniform grain size" patented technology

The invention discloses a preparation method of a hydrocracking catalyst. The method comprises the steps of preparing an acidic mixed solution A containing hydrogenation reactive metals and silicon, preparing a sodium metaaluminate alkaline solution B, and then adding the acidic mixed solution A, the alkaline solution B and CO2 to a reaction tank filled with clear water in parallel to prepare gel; and then adding turbid liquid of a Y type molecular sieve, mixing the substances uniformly, filtering, drying and forming the mixture, and then washing, drying and roasting the product, thus preparing the hydrocracking catalyst. The method has the beneficial effects that a clean preparation method is adopted, so not only can the catalyst be easily formed and the strength of the catalyst be improved, but also the pore volume and specific surface area of the catalyst can be increased and the dispersity of metals in the catalyst can be improved, thus the catalyst has higher hydrocracking activity, middle oil selectivity and stability; and the catalyst prepared by the method can be used for a single-section hydrocracking process of a non-refining section or a one-section serial hydrocracking process of a refining section.

The invention provides a preparation method of a polycrystalline silicon ingot. The preparation method comprises the following steps that a core source is arranged at the bottom of a crucible, and a core source layer is formed; silicon materials in a molten state are arranged on the core source layer; and the temperature in the crucible is controlled to gradually rise in a direction vertical to the upward direction form the bottom of the crucible, the temperature gradient is formed, the silicon materials in the molten state form core crystallization by utilizing the core source, and the polycrystalline silicon ingot is prepared. The invention also provides high-quality polycrystalline silicon ingot obtained by the preparation method, a polycrystalline silicon slice obtained through the preparation of the polycrystalline silicon ingot and the crucible for polycrystalline silicon ingot casting. The polycrystalline silicon ingot prepared by the preparation method has the advantages that the crystalline size is uniform and regular, the dislocation density is low, and in addition, no obvious pine-tree crystals or twin crystals exist.

A preparation method of a high-toughness boride-carbide composite ceramic relates to a preparation method of a boride-carbide composite ceramic and solves the problems that in the conventional preparation of the boride-carbide composite ceramic, due to high sintering temperature and high sintering pressure, the preparation cost is high and the prepared boride-carbide composite ceramic is poor in mechanical property and fracture toughness. The preparation method of the high-toughness boride-carbide composite ceramic comprises the following steps : adding a dispersing medium into boride and carbide; uniformly mixing the dispersing medium, the boride and the carbide; pressing the mixture into a blank material; and sintering the blank material in a two-section pressure-free sintering way at alow temperature and a high temperature sequentially. The sizes and the distribution of grain crystals in the boride-carbide composite ceramic which is prepared under the low-temperature pressure-freeconditions are uniform; the fracture toughness is as high as 5.0-13MPa.m<-1/2>; and the bending strength is as high as 400-1000 MPa; the boride-carbide composite ceramic with excellent comprehensive mechanical property can be prepared; the preparation cost is reduced; and the application range is widened.

The invention relates to an aluminum-scandium alloy target blank and a preparation method and application thereof. The aluminum-scandium alloy target blank comprises, by weight part, 0.1-15 parts of scandium and 85-99.9 parts of aluminum, and the oxygen content of the aluminum-scandium alloy target blank is smaller than or equal to 160 ppm. The aluminum-scandium alloy target blank has the beneficial effects that the oxygen content is low, then the prepared target blank cannot generate abnormal discharge or particle splashing scars, and later high-quality film forming can be guaranteed; and inaddition, the aluminum-scandium alloy target blank is even in target blank crystal particle size.

Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.

The invention provides an electric field activated sintering method of a solid electrolyte material Li7La3Zr2O12 (LLZO). The electric field activated sintering method comprises the following specific steps: ball-milling with a ball and mixing Li2O, La2O3 and ZrO2 powder, the mass percents of which are respectively 9.2-15.5%, 56.2-60.4% and 28.3-30.4%, wherein a zirconium oxide ball is used as a ball-milling medium, isopropanol is used as a solvent, and the ball-milling time is 12-36 hours; carrying out vacuum drying on ball-milling milled powder for 6-12 hours at the temperature of 80 DEG C; and carrying out electric field activated sintering, wherein the temperature is in the range from 800 to 1230 DEG C, the pressure is 0-100 MpaMPa, and a sintered sample has the room-temperature lithium-ion conductivity greater than 6*10<-4S>S/cm. Compared with a conventional solid-phase synthesis method, the electric field activated sintering method has the advantages that the synthesis reaction and the sintering compact process are completed in one step, the synthetic efficiency is improved to a large extent, the preparation technology is simplified, and the LLZO with the high lithium-ion conductivity is obtained.

The invention discloses a fine-crystal transparent alumina ceramic material and a preparation method. A formula of the material comprises the following constituents by weight percentage: 99.6-99.98% of Al2O3 and 0.02-0.4% of MgO, ZrO2 and La2O3. The particle size of the ceramic is at the range of 0.8 micrometer to 1.5 micrometer, and the linear light transmission at the 640-nanometer position is larger than 37%. High-purity alumina powder is used to be formed by cold isostatic compaction and sintered at hydrogen atmosphere, and temperature rises to 1,300 DEG C, then decreases to 1,150 DEG C and is preserved. By means of the method, the fine-crystal transparent alumina ceramic material is high in compactness, excellent in mechanical property, high linear transmission and suitable for ceramic metal halide lamp tubes, key components of semiconductor devices, high temperature observation and the like.

The invention provides a low-total harmonic distortion (THD) wideband high-permeability MnZn ferrite material, which comprises the following principal components of: 51.5 to 53 mol percent of Fe2O3, 22 to 27.5 mol percent of Mn3O4 based on MnO, and 20 to 25 mol percent of ZnO; and auxiliary components are at least four of TiO2 (or SnO2), Co2O3, MoO3, Bi2O3, SiO2, CaCO3 and Nb2O5, wherein the total weight of the auxiliary components is 0.02 to 0.04 weight percent of that of the principal components. In the low-THD wideband high-permeability MnZn ferrite material, an initial permeability at a low frequency of 10kHz and a high frequency of 200kHz at the temperature of 25 DEG C is not less than 10,000, and a hysteresis constant etaB is less than 0.2*10<-6>/mT. The invention also provides a method for manufacturing the low-THD wideband high-permeability MnZn ferrite material, which comprises the following steps of: mixing, drying, presintering, ball milling, pelleting, compression molding and sintering. The method has the advantages of simple process and low cost.

The invention discloses a low-temperature sintered high-permeability NiCuZn ferrite material for a wire wound chip inductor and a preparation method of the ferrite material. The ferrite material comprises the following main components based on oxide content: 40.5 to 49.6 moles percent of Fe2O3, 30 to 47 moles percent of ZnO, 5 to 20 moles percent of CuO and the balance of NiO. The preparation method comprises the following steps of: (1) mixing raw materials, (2) performing primary sanding, (3) performing primary spray drying and granulation, (4) pre-sintering, (5) adding trace elements, (6) performing secondary sanding, (7) performing secondary spray drying and granulation, (8) molding and (9) sintering. By adding auxiliary components such as NaCO3, B2O3, Ta2O5 and the like, the sintering temperature is greatly reduced, the sintering temperature is below 900 DEG C, the high-frequency electromagnetic performance of the material is greatly improved, the sintering density of the material is improved, the mechanical strength of the material is improved, and the manufacturing process requirement of the wire wound chip inductor is met; and on the other hand, energy is saved, and the producing and manufacturing costs are greatly reduced. The initial permeability of the material is 2,850; the specific loss coefficient of the material is less than 5.5*10<-6> under the test conditions of 100 kHz and 0.25mT; and the specific loss coefficient of the material is less than 25.6*10<-6> under the test conditions of 500 kHz and 0.25mT.

The invention discloses a casting method for a polycrystalline silicon ingot. The casting method comprises a crucible pretreatment process and an ingot casting process, wherein the crucible pretreatment process comprises the steps of preparing silicon nitride slurry from silicon nitride powder, silica sol and water, spraying the silicon nitride slurry at the side wall and bottom of a crucible, and spraying other silicon nitride slurry at the bottom of the crucible; and soaking silicon powder in an acid solution with strong oxidizing property for 30-60 minutes, then, separating, washing to be neutral, drying the washed silicon powder, next, preparing slurry from the dried silicon powder, the silica sol and the water, spraying the slurry at the bottom of the obtained crucible, and sintering the treated crucible; and the melting stage of the ingot casting process comprises the step of immediately opening a cage to cool when a silicon material floats from the bottom of the crucible. The polycrystalline silicon ingot produced by using the casting method disclosed by the invention has the characteristics of short production period, low cost, long silicon ingot minority carrier lifetime, high primary silicon material utilization ratio and the like, and the obtained polycrystalline silicon wafer has the characteristics of uniform grain size, small defect density, high photoelectric conversion efficiency and the like.

The invention discloses a preparation method for high-purity flaky alumina, belonging to the technical field of preparation of special powder. The preparation method comprises the following steps: with high-purity aluminum isopropoxide with a purity of 99.999%, pure water and isopropanol as main raw materials and ammonium bifluoride or ammonium fluoride as a crystal morphology controlling agent, dissolving the high-purity aluminum isopropoxide in isopropanol to prepare a solution A; preparing a solution B from pure water, isopropanol and ammonium bifluoride; then gradually adding the solution A into the solution B drop by drop at a certain addition speed; carrying out a reaction under the conditions of heating and stirring so as to produce hydrated alumina; and then successively carrying out filtering, drying and roasting so as to obtain the high-purity flaky alumina. The high-purity flaky alumina prepared by using the method has crystal grain thickness of no more than 1.0 [mu]m, a radial size of 5 to 20 [mu]m, a smooth surface, a flaky shape, no agglomeration and crystal twinning, and good dispersibility, and can be used in fields like cosmetics, pearlescent pigment, high-grade coatings and fine ceramics.

The invention discloses a method for preparing a perovskite film and a perovskite solar cell device, wherein the method for preparing a perovskite film comprises the following steps: (1) preparing a perovskite precursor solution, then adding anti-solvent diethyl ether to the perovskite precursor solution, and uniformly mixing the anti-solvent diethyl ether and the perovskite precursor solution; (2) dropping the perovskite precursor solution containing the diethyl ether onto the surface of a substrate, performing spin coating, and dropping anti-solvent toluene during the spin coating in order to wash the surface of perovskite; (3) after the spin coating, subjecting an obtained perovskite film intermediate product to thermal annealing treatment to obtain the perovskite film. Adding the diethyl ether to the perovskite precursor solution can control the growth of a perovskite crystal, can prepare a perovskite film having a uniform grain size and low surface roughness, and is beneficial toimproving carrier mobility, a diffusion length, and a charge transport capacity. The perovskite film, when used as an active layer of the perovskite solar cell device, can effectively improve the photovoltaic performance of the device.

The invention belongs to the technical field of material surface chemical coating, in particular relating to a preparation method of a photoassisted sol-gel of a yttrium doped zinc oxide transparent conductive film. In the invention, the sol-gel is prepared by adopting a photoassisted sol-gel method and a hierarchic annealing method, and taking zinc acetic acid and yttrium nitric acid as raw materials, ethylene glycol monoemethyl ether as a solvent, and ethanolamine as a stabilizer; and by regulating the doping amount of the yttrium, controlling the temperature and the time of drying and annealing, and irradiating by ultraviolet, the control on the electricity performance of the yttrium doped zinc oxide transparent conductive film is achieved. In the invention, the prepared yttrium doped zinc oxide transparent conductive film has the resistivity within 2.1*10<-2> omega.cm to 8.1*10<-2> omega.cm, the light transmission ratio (including substrate) of a visible light area is more than 85%; in addition, the film consists of zinc oxide nano-crystals with a hexagonal wurtzite structure, wherein the crystal sizes are even, and the crystals are arranged compactly and have C-axis preferable growth orientation.

The invention relates to an aluminum-scandium alloy target blank and a preparation method and application of the aluminum-scandium alloy target blank. The aluminum-scandium alloy target blank comprises, by weight, 16-50 parts of scandium and 50-84 parts of aluminum. The oxygen content of the aluminum-scandium alloy target blank is smaller than or equal to 160 ppm. The aluminum-scandium alloy target blank is high in scandium content and low in oxygen content, so that the prepared target blank cannot generate abnormal discharge or particle sputtering scars, and follow-up high-quality firm formation can be guaranteed.

The invention discloses a polycrystalline silicon film and a preparation method thereof, an array substrate and a display device, belonging to the technical field of semiconductors. The preparation method of the polycrystalline silicon film comprises the following steps of: (1) forming a graphene layer and a noncrystalline silicon layer which are adjacent; and (2) enabling noncrystalline silicon to crystallize and form polycrystalline silicon and obtaining the polycrystalline silicon film. The polycrystalline silicon in the polycrystalline silicon film has the advantages of no pollution and low defect density, the crystal grain size of the polycrystalline silicon is uniform in size, the arrangement is ordered, the crystal grain is larger, and further the surface flatness is better. The speed rate of current carriers in the polycrystalline silicon film prepared by the method is increased, and the element performance of a polycrystalline silicon film transistor is improved.

The invention discloses a copper-iron based catalyst in the technical field of catalyst preparation and application thereof in preparing low mixed alcohols by catalyzing synthesis gas. According to the invention, a copper-magnesium-iron hydrotalcite precursor is prepared by a nucleation-crystallization isolating method, and then the copper-magnesium-iron hydrotalcite precursor is roasted and then subjected to reduction treatment to obtain the copper-iron based catalyst of highly dispersed nanoparticles. The catalyst has the characteristics that the catalytic active ingredients are highly dispersed, the catalytic active ingredients have strong interaction with one another, and are high in stability, and as a result, the activity and selectivity of the catalyst are improved. After the copper-iron based catalyst is applied to preparing low mixed alcohols from the synthesis gas, the CO conversion rate is high, and the selectivity and space time yield of the low mixed alcohols are also improved; besides, the conversion rate of CO for synthesizing low mixed alcohols through CO hydrogenation is 56.89% and the selectivity of alcohols is 49.07%.

The invention relates to a NiCuZn ferrite material with high magnetic permeability and low-temperature sintering, whose main phase is a spinel structure, the compositions which are calculated through oxide content are that Fe2O3 is 41-52.8mol%, ZuO is 20-45mol%, and CuO is 1-14mol%, NiO is 2-15mol%. MoO3 and In2O3 are used as additive based on the above materials, MoO3: 0.15wt%-0.25wt% is added, and In2O3: 0.12wt%-0.45wt% is added. Ferrite blanks which are prepared are put in a furnace to be sintered, the sintering temperature is 910-950 DEG C, the sintering time is 6-20 hours, and the temperature is kept for 2-4 hours.

Belonging to the technical field of target material preparation, the invention discloses a high purity NIPT alloy target material and a preparation method thereof. The method is characterized by: conducting cogging by hot forging, and combining cold rolling and recrystallization heat treatment to control the alloy microstructure. The specific technological process includes: hot forging, cold rolling, vacuum heat treatment, finish machining and the like. The high purity NIPT alloy target material obtained by the method has fine and uniform grains, and the grain orientation of the target material sputtering surface is in random distribution.

The invention discloses a preparation method for a TiAl alloy bar and relates to a preparation method for a bar. The preparation method for the TiAl alloy bar aims at solving the problems that according to a TiAl alloy bar prepared through an existing method, the preparation process is complex, the surface of the bar cracks, the diameter is nonuniform, the bar structure grain size is nonuniform, and TiAl alloy reacts with package materials and is molten when the extrusion temperature is too high. The preparation method for the TiAl alloy bar comprises the specific steps that 1, all raw material components are weighed; 2, a cast ingot is prepared through water cooling copper crucible induction skull melting; 3, pretreatment is conducted on an extrusion blank; and 4, bar extrusion is conducted, and thus the TiAl alloy bar can be obtained. The surface of the TiAl alloy bar obtained through the preparation method is free of cracking, the diameter is uniform, the bar structure grain size is uniform, and the process is simple.

The invention discloses a thermal treatment method used for improving a duplex stainless steel welded structure, which comprises the following steps: 1) heating by an electric oven at the temperature lower or close to duplex stainless steel phase transition when a duplex stainless steel weld seam and a heat affected zone are heated by a thermal treatment technology, simultaneously carrying out electric pulse heating; 2) insulating for 10-60 minutes after heating, cooling with three phases, wherein in a first phase, the temperature of the welded structure is 850 DEG C and the cooling speed is controlled at 1-30 DEG C/s, simultaneously providing pulse current; in a second phase: the temperature is decreased to 800-500 DEG C, the cooling speed is controlled at 5-50 DEG C/s, and the cooling speed is greater than that of the first phase; in a third phase: the temperature is decreased below 500 DEG C and the cooling speed is controlled more than 30 DEG C/s. The thermal treatment for duplex stainless steel welded seam and the heat affected zone can control the volume fraction and existence form of ferrite, avoid the precipitation of a brittleness phase in ferrite/austenite, ferrite/ferrite crystal boundary, and enhance the capability of pitting corrosion resistance of the duplex stainless steel.

The invention relates to successful preparation of a Co-MOF-71 nano-material. According to the invention, preparation process conditions are optimized; the prepared Co-MOF-71 nano-material is uniform in crystal grain size and has good stability; and when Co utilizes the acidic catalysis reaction of MOF framework metal ions, the metal ions are active sites and the supporting points of a framework, and metal ions undergo coordination in the process of catalysis. The prepared Co-MOF-71 material has high metal content and completely exposed metal sites; more Lewis acid site Co-MOF-71 materials can be provided; and the material is beneficial for total activation of reactant molecules and has good catalytic activity.

The invention belongs to the technical field of electronic materials. Multi-element doped high-performance beryllium oxide ceramic material, in addition to beryllium oxide, also includes 0.2-0.6% by mass of multi-element dopant; said multi-element dopant is composed of MgO, Al2O3, SiO2, CaO, ZnO and rare earth oxides , the mass percentage content of each component is: MgO: 5-60%, Al2O3: 0-40%, SiO2: 20-95%, CaO: 0.1-0.5%, ZnO: 0-0.5%, containing Y, La, Single or random mixed rare earth oxides of Ce or Sm: 0.01-0.5%. The multi-element dopant is prepared by a sol-gel method, and then mixed with a high-purity beryllium oxide raw material, shaped and sintered at a high temperature to obtain the multi-element doped high-performance beryllium oxide ceramic material of the present invention. The multi-component doped high-performance beryllium oxide ceramic material provided by the invention has lower sintering temperature, higher density, thermal conductivity and mechanical properties; its microstructure has the characteristics of compactness, uniform crystal grains and few pores. The preparation method has simple process, low production cost and good repeatability, and is suitable for industrialized production.