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Method for preparing perovskite film, and perovskite solar cell device

A solar cell and perovskite technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., to achieve the effect of improving photovoltaic performance, improving charge transport capacity, increasing carrier mobility and diffusion length

Active Publication Date: 2018-11-27
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The quality of perovskite films prepared by this operation process is easily affected by factors such as precursor concentration, thermal annealing temperature and time, and spin coating rate.

Method used

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  • Method for preparing perovskite film, and perovskite solar cell device
  • Method for preparing perovskite film, and perovskite solar cell device
  • Method for preparing perovskite film, and perovskite solar cell device

Examples

Experimental program
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Effect test

Embodiment 1

[0032] 1) Solution configuration: MAI and PbI 2Dissolve in the mixed solvent with a molar ratio of 1:1, the concentration is 1.5mmol / mL, DMF and DMSO in the mixed solvent form the main solution with the ratio of 8:2, and then add a certain volume of ether, so that the content of the ether additive accounts for 3% of the volume of the mixed solution, magnetic stirring for 6h until the solution is clear and ready for use;

[0033] 2) Cleaning of the substrate: place the ITO conductive glass substrate on a dedicated substrate holder, and use cleaning agent, deionized water, acetone and ethanol to ultrasonically twice, each time for 20 minutes; after cleaning, put it in an oven Dry, and then treat the dried ITO conductive glass with ultraviolet-ozone plasma for 4 minutes to improve the work function;

[0034] 3) Preparation of the hole transport layer: NiOx was made into a suspension with a concentration of 20 mg / mL, and it was dispersed more uniformly by ultrasonication before u...

Embodiment 2

[0040] The perovskite thin film is prepared with reference to the method of Example 1, and the solar cell device is prepared with the perovskite thin film as the active layer, the difference is that in the perovskite precursor solution prepared in step 1), the volume of ether anti-solvent accounts for the total mixed solvent 4% of the volume.

Embodiment 3

[0042] The perovskite thin film is prepared with reference to the method of Example 1, and the solar cell device is prepared with the perovskite thin film as the active layer, the difference is that in the perovskite precursor solution prepared in step 1), the volume of ether anti-solvent accounts for the total mixed solvent 6% of the volume.

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Abstract

The invention discloses a method for preparing a perovskite film and a perovskite solar cell device, wherein the method for preparing a perovskite film comprises the following steps: (1) preparing a perovskite precursor solution, then adding anti-solvent diethyl ether to the perovskite precursor solution, and uniformly mixing the anti-solvent diethyl ether and the perovskite precursor solution; (2) dropping the perovskite precursor solution containing the diethyl ether onto the surface of a substrate, performing spin coating, and dropping anti-solvent toluene during the spin coating in order to wash the surface of perovskite; (3) after the spin coating, subjecting an obtained perovskite film intermediate product to thermal annealing treatment to obtain the perovskite film. Adding the diethyl ether to the perovskite precursor solution can control the growth of a perovskite crystal, can prepare a perovskite film having a uniform grain size and low surface roughness, and is beneficial toimproving carrier mobility, a diffusion length, and a charge transport capacity. The perovskite film, when used as an active layer of the perovskite solar cell device, can effectively improve the photovoltaic performance of the device.

Description

technical field [0001] The invention relates to a perovskite thin film, in particular to a method for preparing a perovskite thin film and a solar cell device using the perovskite thin film prepared by the method as an active layer, and belongs to the field of perovskite semiconductor cell devices. Background technique [0002] In 1983, German mineralogist Gustav Roth discovered a special ore sample in Russia, the main component of which was calcium titanate (CaTiO 3 ), he named the ore after the geologist L.A. Perovski. Later, other compounds with a similar molecular structure to this ore were also called perovskites, which is what we now call perovskites. The molecular structure of perovskite materials can be used in ABX 3 Indicates that B represents a metal cation (such as Pb 2+ or Sn 2+ ) is located at the core of the octahedron; X represents the halogen anion (I - , Cl - or Br - ) is located in the center of the face; A represents a cation, which can be calcium, ...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/15H10K30/15H10K30/10Y02E10/549
Inventor 曾文进王惠平
Owner NANJING UNIV OF POSTS & TELECOMM
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