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749results about How to "High property" patented technology

Sulfonated block copolymers, method for making same, and various uses for such block copolymers

The present invention is a, solid block copolymer comprising at least two polymer end blocks A and at least one polymer interior block B wherein each A block is a polymer block resistant to sulfonation and each B block is a polymer block susceptible to sulfonation, and wherein said A and B blocks do not contain any significant levels of olefinic unsaturation. Preferably, each A block comprising one or more segments selected from polymerized (i) para-substituted styrene monomers, (ii) ethylene, (iii) alpha olefins of 3 to 18 carbon atoms; (iv) hydrogenated 1,3-cyclodiene monomers, (v) hydrogenated monomers of conjugated dienes having a vinyl content less than 35 mol percent prior to hydrogenation, (vi) acrylic esters, (vii) methacrylic esters, and (viii) mixtures thereof; and each B block comprising segments of one or more polymerized vinyl aromatic monomers selected from (i) unsubstituted styrene monomers, (ii) ortho-substituted styrene monomers, (iii) meta-substituted styrene monomers, (iv) alpha-methylstyrene, (v) 1,1-diphenylethylene, (vi) 1,2-diphenylethylene and (vii) mixtures thereof. Also claimed are processes for making such block copolymers, and the various end uses and applications for such block copolymers.
Owner:KRATON POLYMERS US LLC

Photovoltaic conversion device and method of manufacturing the device

There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate 404 doped with boron, which comprises a bulk substrate region 404, regions other than the bulk substrate region including an n-type region 403a joining to a light receiving surface of the bulk surface region, a BSF region 405 joining to a back surface of the bulk surface region,
    • [0001]
    • wherein with regions other than the bulk substrate region 404 being removed, when a minority carrier diffusion length of the bulk substrate region 404 is measured from the light receiving surface of the bulk surface region, 0.5<(L1/Lpeak)is satisfied, where L1is a minority carrier diffusion length at an arbitrary measuring area of the light receiving surface of the bulk surface region, and Lpeak is a diffusion length corresponding to a maximum peak on the side of higher diffusion length of a histogram, the histogram being formed from data obtained when a minority carrier diffusion length of the light receiving surface of the bulk surface region is measured at a plurality of measurement areas. This structure can reduce influence of impurities such as Fe, and enhances utilization efficiency of silicon ingots. With this structure, a photovoltaic conversion device with high photovoltaic conversion efficiency can be realized.
Owner:KYOCERA CORP

Electrophotographic photoconductor, and image forming apparatus, process cartridge and image forming method using the same

An object of the present invention is to provide an image forming apparatus containing an electrophotographic photoconductor, a charging unit, an exposing unit, a developing unit, a transfer unit and a cleaning unit,
wherein the electrophotographic photoconductor contains a support and at least a photosensitive layer disposed on the support, wherein the photosensitive layer contains a charge generating material and a compound expressed by the following Structural Formula (1), and
wherein, in the Structural Formula (1), “R1” and “R2” may be identical to each other or different, and represent any one of hydrogen atom, alkyl group which may be substituted, cycloalkyl group which may be substituted and aralkyl group which may be substituted. “R3”, “R4”, “R5”, “R6”, “R7”, “R8”, “R9”, “R10”, “R11”, “R12”, “R13” and “R14” may be identical to each other or different, and represent any one of hydrogen atom, halogen atom, cyano group, nitro group, amino group, hydroxyl group, alkyl group which may be substituted, cycloalkyl group which may be substituted and aralkyl group which may be substituted. “n” is a number of replication and represents an integer of 0 to 100.
Owner:RICOH KK

Water-absorbent resin and production prcess therefor

To provide: a process in which a coarse gel itself is made not to form in the case of applying the aqueous solution polymerization; and a process in which the polymerization is mildly controlled and the production is stably carried out in the case of applying the reversed-phase suspension polymerization or static polymerization, in a production of a water-absorbent resin. In a production process for a water-absorbent resin, which comprises a polymerization step that includes the steps of carrying out polymerization, involving crosslinking, of an aqueous solution of a water-soluble unsaturated monomer including acrylic acid(salt);and at the same time carrying out fine division of the resultant hydrogel, or in a production process for a water-absorbent resin, which comprises the steps of carrying out polymerization, involving crosslinking, of an aqueous solution of a water-soluble unsaturated monomer including acrylic acid(salt);and carrying out fine division of the resultant hydrogel, or in a production process for a water-absorbent resin, which comprises a polymerization step that includes the steps of carrying out polymerization, involving crosslinking, of an aqueous solution of a water-soluble unsaturated monomer including acrylic acid(salt); and at the same time obtaining a finely divided hydrogel, the water-soluble unsaturated monomer is adjusted in order to contain furfural in an amount of 11 to 1,000 weight ppm (relative to the monomer).
Owner:NIPPON SHOKUBAI CO LTD
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