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High purity NiPt alloy target material and preparation method thereof

An alloy target and high-purity technology, which is applied in the field of high-purity NiPt alloy sputtering target and its preparation, can solve the problems of large loss of NiPt alloy target material and achieve the effect of fine grain

Inactive Publication Date: 2015-06-24
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the hot rolling process will cause a large material loss during the preparation of the NiPt alloy target.

Method used

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  • High purity NiPt alloy target material and preparation method thereof
  • High purity NiPt alloy target material and preparation method thereof
  • High purity NiPt alloy target material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A 3N5 NiPt ingot with a Ni:Pt mass ratio of 95:5 is heated and forged at 900-1000°C to form a billet of the desired shape. Broken as-cast structure.

[0033] The billet is rolled by a rolling mill, and the rolling method is cross rolling. The pass deformation is 5%-35%, the initial rolling deformation is 10%, and when the final thickness is close to the desired billet thickness, the pass deformation is 35%, and the total deformation reaches 95%.

[0034] The billet after rolling is subjected to vacuum heat treatment, and the heat treatment temperature is 800°C.

[0035] The metallographic structure of the resulting finished blank is shown in figure 2 , the grain size is about 30 μm.

Embodiment 2

[0037] A 3N5 NiPt ingot with a Ni:Pt mass ratio of 85:15 was heated and forged at 1150°C to form a billet of the desired shape. Broken as-cast structure.

[0038] The billet is rolled by a rolling mill, and the rolling method is cross rolling. The deformation of each pass is maintained at 10%-20%, and the total deformation reaches 80%.

[0039] The billet after rolling is subjected to vacuum heat treatment, and the heat treatment temperature is 900°C.

[0040] The metallographic structure of the resulting finished blank is shown in image 3 , the grain size is about 60 μm.

Embodiment 3

[0042] For the preparation of the 4N5 NiPt alloy with higher purity, the 4N5 NiPt ingot with a Ni:Pt mass ratio of 70:30 is heated and forged at 1250°C to form a billet of the desired shape. Broken as-cast structure.

[0043] The billet is rolled at room temperature using a two-roll rolling mill, and the rolling method is cross rolling. The deformation of each pass is maintained at 10%-25%, and the total deformation reaches 70%.

[0044] The billet after rolling is subjected to vacuum heat treatment, and the heat treatment temperature is 1000°C.

[0045] The metallographic structure of the resulting finished blank is shown in Figure 4 , the grain size is about 100 μm.

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Abstract

Belonging to the technical field of target material preparation, the invention discloses a high purity NIPT alloy target material and a preparation method thereof. The method is characterized by: conducting cogging by hot forging, and combining cold rolling and recrystallization heat treatment to control the alloy microstructure. The specific technological process includes: hot forging, cold rolling, vacuum heat treatment, finish machining and the like. The high purity NIPT alloy target material obtained by the method has fine and uniform grains, and the grain orientation of the target material sputtering surface is in random distribution.

Description

technical field [0001] The invention belongs to the technical field of target material preparation, and in particular relates to a high-purity NiPt alloy sputtering target material and a preparation method thereof. The high-purity NiPt sputtering target material provided by the content of the present invention is suitable for the field of semiconductor and integrated circuit manufacturing. Background technique [0002] At present, the transistor manufacturing technology in the semiconductor integrated circuit (IC) industry has reached the feature size of 45nm and mass industrial production, and the feature size is still decreasing with the advancement of technology. And the continuous advancement of technology requires materials with new characteristics to continuously adapt to the higher requirements of transistors. [0003] Transistor devices (eg, CMOS devices) made with strained silicon (Strained Silicon) technology operate much faster than equivalent devices made with c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22F1/10C22F1/14
Inventor 朱晓光罗俊峰刘红宾李勇军何金江尚再艳于海洋缪卫东
Owner GRIKIN ADVANCED MATERIALS
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