This invention provides a method for preparing high-purity
tantalum powder for semiconductors, comprising the following steps: (1) adding
potassium fluorotantalate into the inner liner of a double cone furnace, evacuating the vacuum, heating to 280-400°C, and holding for 4-8 hours to activate the
potassium fluorotantalate; (2) loading the activated
potassium fluorotantalate and
diluent obtained in step (1) into a reduction vessel, introducing
argon gas to replace the air, heating to 800-900°C to begin
sodium injection, and after
sodium injection, holding for aging for 0.5-2 hours, and allowing to cool to
room temperature to obtain the reactant; (3) washing the reactant obtained in step (2) with water and acid, then washing with pure water until neutral, and
drying to obtain a semi-finished product; (4) placing the semi-finished product obtained in step (3) in a
vacuum sintering furnace for high-temperature
sintering to obtain a
tantalum sintered block, crushing the
tantalum sintered block with a
crusher, and then sieving it with a vibrating
sieve to obtain high-purity tantalum
powder for semiconductors. The high-purity tantalum
powder obtained by this invention can meet the technical requirements of
semiconductor sputtering targets.