15 results about "Titanium molybdenum" patented technology

To provide an arch wire for orthodontics that can reduce pain and discomfort during orthodontic treatment by using a low-rigidity wire. [Solution] The orthodontic archwire 10 has a loop portion 30 formed in a predetermined shape to enable loop mechanics, and is made of a superelastic material selected from the group consisting of nitinol, titanium-molybdenum alloy (TMA), and gum metal, which have a Young's modulus of 100 GPa or less. When the loop portion is activated, a force that slowly returns to its original shape acts continuously on the target tooth, physiologically promoting tooth movement and reducing pain during treatment, and further reducing the risk of complications due to excessive force, such as root resorption and damage to periodontal tissue.

The invention discloses a self-repairing heat dissipation wheel based on a double-response intelligent material and a preparation process thereof, the wheel adopts a three-layer gradient composite structure and a double-trigger control system, and the three-layer structure comprises a self-repairing layer, a transition interface layer and a heat dissipation layer from outside to inside; the surface of the self-repairing layer is provided with a diamond dot matrix, and the inner side of the self-repairing layer is provided with a heating sheet; the transition interface layer is formed by explosive welding of titanium and aluminum; the heat dissipation layer comprises an aluminum alloy base body, a composite phase change material, a directional heat dissipation micro-channel, heat dissipation fins and a micro electromagnetic valve. The double-trigger system comprises a sensing module, a control module and a power supply module. The preparation technology comprises the steps of alloy preparation, explosive welding, heat dissipation structure machining, vacuum diffusion welding, phase change material vacuum infusion, function integration and the like. Micro-damage self-repairing and efficient heat dissipation are achieved, it is guaranteed that the structure is stable and matched with working conditions, the service life of wheels is prolonged, driving safety is improved, and light weight and high strength are both considered.

The application relates to the technical field of titanium alloy and discloses a titanium alloy based on laser powder bed melting and a preparation method thereof, the titanium alloy comprises the following elements in percentage by weight: 85-93% of titanium, 4-6% of molybdenum, 2-4% of iron, 1-4% of tin, and inevitable impurities as the balance; the forming state organization of the titanium alloy prepared through laser powder bed melting technology is composed of metastable beta phase and fine and dispersed nanometer omega phase, and the size of the nanometer omega phase is 3-6 nm. The titanium alloy of the application has super-high strength and good plasticity, does not need a subsequent heat treatment process, and realizes low-cost, high-performance and short-process preparation of metastable beta titanium alloy.

The invention discloses a plating material for surface metallization of a ceramic material, the ceramic material and a preparation method of the ceramic material. The plating material for metallizing the surface of the ceramic material comprises a metal alloy and a mixed salt in a weight ratio of 1: (1-10), wherein the metal alloy comprises, by weight, 10%-99% of active metal elements, 0%-85% of iron elements and 1%-5% of other elements, and the active metal elements comprise one or more of transition metal of titanium, molybdenum, vanadium, niobium, tungsten or rare earth neodymium; the mixed salt comprises two or three of alkali metal salt, alkaline earth metal salt and villiaumite; the plating material for metallization of the surface of the ceramic material is used for forming a metal layer on the surface of ceramic by utilizing ionization deposition of high-temperature molten salt on metal alloy. The plating material for ceramic material surface metallization can be used for plating micron-scale transition metal layers such as titanium, molybdenum, vanadium, niobium, tungsten, rare earth neodymium and the like on the ceramic surface, the aim of low-cost metallization of the ceramic surface is achieved, and the wettability and interface bonding strength of ceramic metal are improved.

This invention belongs to the field of titanium sublimators, specifically a ceramic-sealed electrode structure for titanium sublimators. It includes a guide tube, a sealing flange, a cap, three conductive electrodes made of titanium-molybdenum wires, and a common electrode. The three conductive electrodes and the common electrode are arranged circumferentially along the cap and fixedly connected to it. The cap is fixed inside the sealing flange, and the guide tube is fixed to one side of the sealing flange. The conductive electrodes of the titanium-molybdenum wires include a titanium wire support rod, an upper cap, a ceramic tube, and a lower cap. The ceramic tube is connected to the upper and lower caps on both sides, respectively. The lower cap is fixed inside the cap. The titanium wire support rod passes through the upper cap, the ceramic tube, and the lower cap, and is fixedly connected to the upper cap. The common electrode includes a ground cap and a ground support rod. The ground cap is fixed inside the cap, and the ground support rod passes through the ground cap and is fixedly connected to it. This invention can prevent deformation of the ground support rod and titanium wire support rod caused by the heating of the titanium-molybdenum wires, avoiding poor contact with the power cable due to deformation of the titanium sublimator connector.

A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer containing at least one element selected from a group consisting of molybdenum (Mo), tungsten (W), ruthenium (Ru), and cobalt (Co); a first insulating layer provided between the semiconductor layer and the gate electrode layer; a charge storage layer provided between the first insulating layer and the gate electrode layer; a second insulating layer provided between the charge storage layer and the gate electrode layer; a third insulating layer provided between the second insulating layer and the gate electrode layer; and a metal oxide layer provided between the third insulating layer and the gate electrode layer and containing at least one first metal element selected from a group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), and tantalum (Ta).

The invention relates to the technical field of galvanization equipment, and particularly discloses galvanization processing equipment for a titanium-molybdenum-nickel composite plate, the galvanization processing equipment comprises a bottom plate and a galvanization pool, guide pipes for guiding plates are symmetrically arranged on two sides in the galvanization pool, and flow guide ports extending along the axial directions of the guide pipes are formed in opposite side surfaces of the two guide pipes in a penetrating manner; a sleeve which is parallel to and opposite to the galvanizing pool is arranged between the two groups of guide pipes in the galvanizing pool, a filtering assembly is assembled in the sleeve, the two ends of the two groups of guide pipes are connected through a pipeline, and a circulating pump for driving fluid in the guide pipes to directionally and circularly flow is arranged on the pipeline in a communicating manner. The device is convenient to filter and replace, liquid in the galvanizing pool can be better kept pure, and the galvanizing effect is improved.

This invention relates to a titanium-molybdenum alloy material formed by SLM (Surface Mount Technology) and its preparation method. The alloy material is made from titanium-molybdenum alloy powder and 3D printed by SLM. The alloy material comprises the following components by weight percentage: molybdenum 16%-25%, Fe≤0.076%, C≤0.01%, N≤0.016%, O≤0.072%, N≤0.002%, with the remainder being titanium. The molybdenum is selected from non-spherical ultrafine molybdenum powder particles with a particle size of less than 5μm. In this invention, the mechanical properties of the alloy are improved by reinforcing with molybdenum powder. The use of non-spherical ultrafine molybdenum powder particles can lower the melting point of molybdenum, combining fluidity with good printing performance, making the titanium-molybdenum alloy powder suitable for SLM forming equipment with lower power.

A low-crack, high-wear-resistant titanium alloy and a 3D printing method thereof, wherein the low-crack, high-wear-resistant titanium alloy is obtained by 3D printing composite of a pretreated mixed powder of rare earth oxide-doped titanium-molybdenum alloy powder and Sc powder; the mass fraction of the Sc powder is 0.1-0.6%. The 3D printing method includes: (1) regulating the molding environment: after starting the machine, installing the substrate, installing the scraper and powder return hopper, adding the pretreated mixed powder, pre-spreading the powder, and washing the air in the molding chamber; (2) preheating the substrate, and reciprocating the up-and-down movement of the processing platform; (3) optimizing the key printing parameters: assigning parameters, slicing, setting the printing parameters, 3D printing, and thus the product is complete. The low-crack, high-wear-resistant titanium alloy of this invention has low surface crack density, high density, low microcrack ratio, low average friction coefficient and wear rate, good wear resistance, and synergistic optimization of low-crack molding and high wear resistance performance. The method of this invention is simple in process, low in cost, and suitable for industrial production.

An active anode material for use in a battery in which the active anode material represents mixed oxides of titanium, molybdenum, and niobium corresponding to the formula: TixNbyMO2-yOa wherein x, y, and a represent molar amounts with x ≥ 0.5, y ≤ 1.7, x / y ≥ 0.5, and a > 6.0.

Provided is a semiconductor device capable of reducing leakage current. According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a second electrode, and a fifth semiconductor region of the second conductivity type. The first semiconductor region includes a first portion and a second portion disposed around the first portion. The second semiconductor region is disposed over the first portion. The fourth semiconductor region is disposed over the second portion. The second electrode includes a first metal portion and a second metal portion. The first metal portion is in contact with the first portion and the second semiconductor region. The second metal portion is in contact with the second portion and the fourth semiconductor region. The first metal part and the second metal part contain at least one first element selected from the group consisting of titanium, molybdenum, and vanadium. The fifth semiconductor region is provided below the fourth semiconductor region and is located directly below the second metal portion.

The invention provides a titanium-based corrosion-resistant material which comprises a titanium base material and a corrosion-resistant layer arranged on the surface of the titanium base material, and the corrosion-resistant layer comprises a titanium-molybdenum alloy layer and a transition layer arranged between the titanium-molybdenum alloy layer and the titanium base material; the content of Ti in the titanium base material is not less than 90wt%; the average grain size D1 of the titanium base material is greater than the average grain size D2 of the transition layer, and the average grain size D3 of the titanium-molybdenum alloy layer is greater than the average grain size D2 of the transition layer; and the Mo content A1 in the titanium base material is greater than the Mo content A2 in the transition layer and is less than the Mo content A3 in the titanium-molybdenum alloy layer. A special transition layer is formed between a titanium substrate and a titanium-molybdenum alloy layer, and the average grain size and Mo content of the transition layer are regulated and controlled, so that the average grain size of the transition layer is between coarse grains of the titanium substrate and fine grains of the titanium-molybdenum alloy layer, and the Mo content of the transition layer is between the coarse grains of the titanium substrate and the fine grains of the titanium-molybdenum alloy layer. The corrosion resistance of the surface of the titanium base material can be further improved on the premise that the machining forming performance of the titanium base material is guaranteed.

To provide a method for manufacturing a highly reliable semiconductor device having a stable electric property and a thin film transistor arranged by use of an oxide semiconductor.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming an oxide semiconductor film on a gate electrode with a gate insulative film interposed therebetween over an insulative plane; forming a first conductive film including titanium, molybdenum or tungsten on the oxide semiconductor film; forming a second conductive film including a metal lower than hydrogen in electronegativity on the first conductive film; forming a source electrode and a drain electrode by etching the first and second conductive films; and forming a dielectric film on the oxide semiconductor film, the source electrode and the drain electrode, which is in contact with the oxide semiconductor film.SELECTED DRAWING: Figure 1

The invention relates to the technical field of galvanizing equipment, in particular to a titanium-molybdenum-nickel alloy part galvanizing device which comprises a bottom plate and a galvanizing pool, guide pipes used for guiding plates are symmetrically arranged on the two sides in the galvanizing pool, and a first clamping plate is connected between the two guide pipes in a supporting mode through stand columns. A cross beam frame is mounted at the position, opposite to the first clamping plate, of the galvanizing pool, a second clamping plate is connected to the cross beam frame through a telescopic rod, mounting plates are symmetrically arranged on the two sides of the lower end of the second clamping plate, and a filtering assembly is mounted between the mounting plates; a pneumatic assembly used for locking the stretching length of the telescopic rod is embedded in the second clamping plate, and a pressing assembly used for locking the pneumatic assembly is arranged on the pneumatic assembly in a transmission connection mode. According to the filtering assembly, the first clamping plate is matched with the second clamping plate for clamping and fixing, the telescopic rod and the mounting plate are arranged, so that the filtering assembly can be conveniently replaced, and liquid in the galvanizing bath can be better kept pure.

The application relates to the technical field of galvanizing equipment, and particularly discloses a galvanizing processing equipment for titanium-molybdenum-nickel composite plates, which comprises a bottom plate and a galvanizing pool, guide pipes for guiding plates are symmetrically arranged at both sides in the galvanizing pool, the opposite sides of the two guide pipes are both provided with flow guide openings extending along the axial direction of the guide pipes, a sleeve is arranged between the two groups of guide pipes in the galvanizing pool and is opposite to the galvanizing pool, a filtering assembly is assembled in the sleeve, the two ends of the two groups of guide pipes are connected through pipelines, and a circulating pump for driving the directional circulation of fluid in the guide pipes is arranged on the pipelines. The galvanizing processing equipment can conveniently replace the filter, can better keep the liquid in the galvanizing pool pure, and can improve the galvanizing effect.