163 results about "Backscattered electron" patented technology

The invention provides a material characterization image analysis system and an analysis method thereof. The invention discloses a material characterization image analysis system and an analysis method thereof, and the method comprises the following steps: S1, obtaining a back scattering electron image, a secondary electron image and energy spectrum data of a material through a scanning electron microscope, and dynamically adjusting the acceleration voltage, beam current and detector gain of the scanning electron microscope through a parameter optimization algorithm based on a preset material type and an observation target; s2, carrying out multi-scale feature enhancement preprocessing on the back scattering electron image and the secondary electron image, wherein the preprocessing comprises noise suppression, non-uniform illumination correction and micro-area texture enhancement; s3, pixel-level space registration is carried out on the back scattering electron image and the energy spectrum element distribution diagram, and a multi-modal fusion feature matrix is constructed. The material characterization image analysis system and the analysis method thereof provided by the invention have the advantages that the distortion problem can be well solved, the micro-structure identification accuracy can be improved, and the life prediction error can be reduced.

Provided are anode material and lithium ion battery. The anode material includes a porous carbonaceous material. A silicon material is distributed inside the porous carbonaceous material. The anode material has a uniformity degree N, and N meets N>80%. In a Backscattered Electron (BSE) diagram obtained by scanning the anode material using a Scanning Electron Microscope (SEM) in a BSE automatic brightness and contrast mode, in any one of 100 μm*100 μm regions, the number of particles of the anode material having first brightness is recorded as C1, the number of particles of the anode material having second brightness is recorded as C2, the anode material has a uniformity degree N′=C2 / (C2+C1)*100% in the region, and the uniformity degree N of the anode material is an arithmetic mean of at least 10 N's.

The invention relates to a method for measuring the fluorine distribution rate in a mineral raw material by using a BPMA system, and the method comprises the following steps: pretreating a sample to be measured to obtain a polished section sample of which the surface is plated with a carbon conductive film; placing the X-ray plate sample and the gold standard sample in a scanning electron microscope of a BPMA system, and determining test conditions by adopting a back scattering electron imaging mode; carrying out automatic measurement by adopting a BPMA system, and determining the composition and the mass percentage content ratio of minerals in the sample and the mass percentage content of fluorine in each mineral; and calculating the grade of fluorine in the sample and the distribution rate of fluorine in the mineral. The method provided by the invention has the advantages of simple sample preparation, modularized test process, convenient and reliable data acquisition and the like, and can be widely applied to research on the distribution rate of valuable elements in mineral raw materials.

The invention provides a quantitative analysis method for red mud reaction degree, which comprises the following steps: preparing a cementing material sample containing red mud, acquiring a back scattered electron (BSE) image of the sample, performing semantic segmentation on the BSE image by using a deep learning model, identifying a red mud correlation phase, and determining the red mud reaction degree on the basis of a semantic segmentation result. Calculating the area fraction of the red mud related phase in the image, converting the area fraction into the volume fraction of the red mud, and calculating the reaction degree of the red mud based on the volume fraction; the invention aims to overcome the limitations of strong indirectly, low precision and high cost in the prior art, realizes direct, objective and visual quantification of the red mud reaction degree by accurately identifying the related phase of the red mud and establishing the area-volume equivalent relationship, and provides a reliable technical means for optimizing the red mud composite cementing material.

The invention discloses a quantitative channel contrast imaging method based on a scanning electron microscope, electronic equipment and a medium, and the method comprises the steps: putting a polycrystalline sample into a scanning electron microscope system, determining an ROI, and obtaining crystal data; adjusting the state of the polycrystalline sample to obtain a cross-correlation diagram of the back scattering electron image and the diffraction contrast value image, so that a back scattering electron beam scanning area is overlapped with the ROI; any position is selected in the ROI, and ECP under the current electron beam energy is calculated; determining a target orientation on the ECP, and determining an optimal path for rotating the polycrystalline sample to the target orientation; acquiring back scattering electron images before and after rotation, performing cross correlation, and moving the polycrystalline sample to enable back scattering electron beam scanning areas before and after rotation to coincide; the scanning electron microscope system is adjusted through the steps, and a series of back scattering electron images of the ROI are collected. According to the invention, the scanning electron microscope can characterize and analyze crystal defects such as dislocation, nano-twin crystal, stacking fault and the like of a block-shaped sample.

The invention provides a gold mineral exploration method, device and system and a storage medium. Relates to the technical field of mineral exploration. The gold mineral exploration method comprises the following steps: acquiring a backscattered electron image of a sample to be detected, and screening bright mineral phase particles based on a preset gray threshold; performing energy spectrum analysis to obtain an actually measured energy spectrum corresponding to each bright mineral phase particle; and determining the gold-bearing minerals in the to-be-detected sample according to the actually measured energy spectrum. According to the method provided by the invention, the gold-bearing mineral is determined by analyzing the actually measured energy spectrum, and the identification accuracy and the automation efficiency of the micro-fine gold are improved; the method can effectively solve the problem of missed judgment caused by energy spectrum signal mixing and low matching degree due to fine or wrapped particles in a traditional method, so that more accurate process mineralogy data is obtained, and a reliable basis is provided for formulating an efficient dressing and smelting recovery scheme.

Systems and methods taught herein utilize a single detector to provide both unidimensional data (e.g., for direct topographical imaging) and multidimensional data (e.g., for crystallographic data) for a sample that is interrogated with a charged particle beam. In some examples, unidimensional data can include signal intensity due to backscattered electrons received across the entire detector surface while multidimensional data can include signal intensity due to backscattered electrons as a function of pixel position. By obtaining unidimensional data and multidimensional data from a single detector, the unidimensional data and multidimensional data can be obtained at a same location, at a same time, or both at the same location and same time.

The invention relates to a method for evaluating distribution uniformity of silicon in a CVD (chemical vapor deposition) silicon-carbon composite material. The method comprises the following steps: (S1) acquiring a scanning electron microscope backscattered electron image and a silicon element surface distribution diagram of a sample; (S2) carrying out binarization processing on the silicon element surface distribution diagram through image analysis software, and counting the area proportion sigma Si of the deposited silicon particles; (S3) combining the carbon mass fraction c% of the sample and the correction coefficient delta, and calculating the mass fraction w% of undeposited silicon particles; the correction coefficient delta is obtained through calibration: under the same imaging condition, selecting a region in which all particles are completely covered by a silicon signal and the number of complete particles is not less than 50 from a silicon element surface distribution diagram as a'complete silicon deposition region '; and carrying out the same binarization processing on the silicon particles, wherein the area ratio sigma Si0 of the silicon particles is a correction coefficient delta. The evaluation method provided by the invention has high accuracy, wide applicability and excellent measurement repeatability, and is a scientific and reliable quantitative analysis means.

According to the high-gain back scattering detector and the observation system provided by the invention, the detector can be adaptively integrated with the immersed objective lens, and the combination scheme can realize the remarkable advantage of no loss of the working distance. According to the detector provided by the invention, the light path conduction structure is optimized, and the detector is cooperatively matched with the immersed objective lens, so that the advantage of high-resolution imaging of the immersed objective lens is reserved, the efficient capturing capability of the detector on backscattered electrons is maintained, and sufficient working distance can still be ensured in a high-precision observation scene. The flexible optical fiber is adopted to complete optical signal transmission in the sample bin, the length and the overall size of the light guide pipe can be effectively reduced, and the situation that a large-size light guide pipe of a conventional scintillator type back scattering electron detector occupies too much space in the sample bin is avoided. In addition, the detector realizes four-channel independent imaging of the scintillator type back scattering electron detector through a customized four-channel light guide pipe by connecting an independent optical fiber and a PMT.

To provide a positive electrode for a lithium ion secondary battery, excellent in rate characteristics, a lithium ion secondary battery and a calculation method.SOLUTION: There is provided a positive electrode for a lithium ion secondary battery according to the present invention, in which a positive electrode mixture layer is provided on a current collector and rolled, the positive electrode mixture layer containing a positive electrode active material capable of storing and releasing lithium ions, a conductive agent, and a binder. When, in a SEM reflection electron image, of a positive electrode surface, obtained by a scanning electron microscope (SEM) with an accelerating voltage of 15 kV and a working distance (WD) of 10 mm, a circle is assumed outside an active material area, the circle is not within the active material area and is in contact with a contour of the active material area, and Rv represents a standard deviation of a radius of the circle, Rv>0.280 is satisfied in terms of μm.SELECTED DRAWING: Figure 1

This invention discloses a method for identifying the origin of quartz based on multimodal signal fusion using scanning electron microscopy (SEM). It utilizes only one SEM equipped with an energy dispersive spectroscopy (EDS) probe, a cathodoluminescence (CAT) probe, and a backscattered electron diffraction (BSE) probe. By comprehensively employing multiple indicators, including the coefficient of variation of CL band width (a), the Al-Ti influence coefficient (b), the lattice orientation difference influence coefficient (c), and the relative gravity coefficient of inclusion type (d), the method determines whether a quartz sample is of hydrothermal or metamorphic origin. This invention achieves rapid and accurate identification of the origin of quartz.

The application relates to a scanning electron microscope measurement method for the thickness of a metal compound layer, which comprises the following steps: obtaining a cross section containing the compound layer by wire cutting, and polishing after inlaying; observing under a scanning electron microscope, selecting a copper-tin alloy compound layer to be measured, selecting a backscattering electron probe to obtain a composition contrast image, adjusting the image contrast so that the measured object and the matrix have obvious differences; selecting a magnification of 2500 times matching the thickness of the metal compound layer, obtaining a high-definition backscattering electron image at a scanning speed of 28 seconds / frame; and quantitatively and finely measuring the thickness of the metal compound layer by using ImageJ software. The advantages of the application are as follows: the metal compound layer is extracted by using the ImageJ image processing software, the area is calculated to obtain the average thickness of the film thickness measurement method, not only the accurate alloy layer thickness information is obtained, but also the standard deviation value of the measured object is obtained to evaluate the uniformity of the measured object; the measurement method improves the accuracy and can be applied to detection and analysis practices.

The present application relates to the technical field of electron-optical imaging, and particularly relates to a backscattered electron scintillator detector device and a detection method, which comprises a backscattered electron receiving sensor, an optical condensing group, an optical transmission group, a photoelectric conversion system and a detector protection mechanism. By using a scintillator as a sensor, a backscattered electron signal generated by an industrial electron gun electron beam is received, and then the electronic information carried by the backscattered electron is converted into an optical signal and transmitted to an area far away from the workpiece. Finally, a high signal-to-noise ratio voltage analog signal is formed by the photoelectric conversion system, avoiding the influence of spatial noise and other interference signals on weak signal transmission in the existing analog signal transmission process. For detailed topographic features, a backscattered electron image with high resolution can be displayed.

The present invention provides a positive electrode active material comprising at least one of a single particle consisting of one nodule and a quasi-single particle which is a composite of 30 or fewer nodules, wherein the degree of single crystallization defined by formula (A) is 2.7 or more. Formula (A): Degree of single crystallization = [Formula I] In formula (A), Ri is a radius of an i-th grain measured when a cross-section of an electrode is subjected to electron backscatter diffraction (EBSD) analysis after ion milling treatment of the electrode manufactured by applying the positive electrode active material, and is a value measured in units of ㎛, but the value substituted into formula (A) is a unitless number that does not include a unit, and n is a total number of grains measured through the electron backscatter diffraction (EBSD) analysis.

The invention relates to the technical field of building material test and analysis, and discloses a cement concrete back scattering electron image analysis sample preparation method, which comprises: S1, crushing cement into a sample; s2, stopping hydration and drying at low temperature: soaking the sample in absolute ethyl alcohol or isopropanol, and drying at low temperature; s3, pre-polishing: pre-polishing the sample by using raw abrasive paper; s4, inlaying: inlaying the sample with low-viscosity epoxy resin in vacuum cold inlaying equipment; s5, rough grinding is conducted, specifically, the sample is ground through 800 #-2000 # abrasive paper; s6, secondary low-temperature drying: wiping the surface of the sample with absolute ethyl alcohol, and then performing low-temperature drying; s7, fine grinding: finely grinding the sample by using 2500 #-4000 # abrasive paper in sequence; s8, polishing: polishing the sample by using a 1000 nm polishing solution and a 500 nm polishing solution in sequence; and S9, final cleaning: wiping the surface of the sample with absolute ethyl alcohol to obtain the sample for analyzing the backscattered electron image with a flat and smooth surface. According to the scheme, the cement samples are processed according to the sequence, so that the flat and smooth samples without scratches and cracks can be obtained, and then the high-quality back scattering electron image is obtained.

Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

The invention discloses an electron detection device and a scanning electron microscope, and relates to the technical field of scanning electron microscopes. The device comprises an objective lens, the objective lens comprises a first coil used for forming a magnetic lens and a second coil used for forming an immersion magnetic field, the first coil and the second coil are wrapped by a first pole shoe and a second pole shoe respectively in a non-closed mode, the first pole shoe is provided with an axial channel part, the second pole shoe is provided with a conical extension part, and a diaphragm hole is formed in the bottom of the conical extension part; the detector is arranged on the axial channel part or the conical extension part and is positioned above the diaphragm hole; and the first control electrode is arranged at the inner side of the diaphragm hole and is used for generating an electric field so as to cooperate with the immersion magnetic field generated by the second coil to guide or prevent the secondary electrons from reaching the detector. According to the electron detection device, through the arrangement of the first control electrode, secondary electrons can be guided to the detector, so that the collection efficiency of the secondary electrons can be improved, the secondary electrons can be prevented from reaching the detector, and the detector can conveniently collect backscattered electrons.

This invention provides a high-resolution, low-energy electron microscope and a mask inspection method for providing topographic information. [Solution] A corrected scanning electron microscope (CSEM) and a method for operating the CSEM are presented for selectively separating material contrast from topographic contrast. The microscope and method enable high imaging resolution by backscattered electrons generated from low-energy primary electrons. The CSEM and method are applicable to mask modification and circuit editing processes having resolution requirements in the low nm range or even lower range.

The invention discloses an analysis method for damage residues of an engine blade. The method comprises the following steps: spraying and cleaning the injured part by using anhydrous alcohol; a special marking pen containing electrolytic copper powder is adopted for marking; adhering the extracted residues and the marks by using a carbon conductive adhesive tape; sealing and storing the extracted sample in a self-sealing bag; and finally, back scattering electron imaging and energy spectrum analysis are carried out through a scanning electron microscope. The method solves the technical problems of long period caused by leaf decomposition, secondary pollution caused by cutting sampling, low contrast between residues and a matrix, difficulty in distinguishing and the like in the traditional analysis method. Through a unique marking system and an extraction process, in-situ rapid sampling can be carried out after engine test run, the residue identification efficiency and the component analysis accuracy are remarkably improved, and a reliable technical means is provided for blade damage fault analysis.

The invention discloses an average atomic number detection method and system for a material sample, a medium, equipment and a product in the technical field of scanning electron microscope detection, and aims to solve the optimization problem of the existing detection technology. The method comprises the following steps: carrying out image preprocessing on an obtained backscattered electron image of a to-be-detected material sample to obtain a processed image; performing image segmentation on the processed image by using a trained clustering model to obtain a to-be-tested material sample area; calculating the average gray value of the to-be-detected material sample area of the processed image; and inputting the average gray value of the to-be-tested material sample area of the processed image into the fitted index model to obtain the predicted average atomic number of the to-be-tested material sample. According to the invention, characterization of material elements and distribution states thereof can be realized efficiently and conveniently, and the method is suitable for analysis and detection of various non-magnetic elementary substances, compounds and mixtures.

The invention relates to the technical field of photoetching, in particular to an electron beam simulation method based on a composite absorption layer and a composite absorption layer mask plate. In order to overcome the technical defect that the direct writing precision of an electron beam is affected due to unexpected exposure of a resist in a peripheral area of a target pattern caused by the proximity effect of back scattering electrons, the mask structure is optimally designed, and the structure of a double-layer absorption film structure of the mask is optimally designed. Compared with a traditional method for designing and verifying through experiments, the method has the advantages that the mask structure optimization efficiency is greatly improved, the material consumption is reduced, the optimal mask model is quickly screened out by reasonably setting the simulation calculation parameters, and the method is suitable for large-scale popularization and application. And experimental effect verification is performed on the optimized mask model in a targeted manner, so that the effect accuracy of the simulation model and the practicability of the simulation method are improved.

A positive electrode includes a positive electrode active material that includes a lithium nickel-based composite oxide and is in a form of a single particle. A ratio of a volume cumulative average particle diameter (D50) of the positive electrode active material measured using a particle size analyzer to a grain size of the positive electrode active material measured using backscatter electron diffraction after ion milling of the positive electrode is about 1.6 to about 1.8.

The present application relates to a kind of scanning electron microscope in-situ thick liquid layer of liquid environment sample of microanalysis method, it includes the following steps: S1, liquid environment sample is sealed in sealed film and is sealed to obtain assembly sample;S2, the micro area characterization test of thick liquid layer of liquid environment sample is carried out in field emission scanning electron microscope cavity, the difference of the image contrast caused by the reflection ability of sample and liquid environment to backscattered electron beam is different, obtain the high resolution topographic map of liquid environment sample;S3, the element analysis of micro area of liquid environment sample is carried out using the characteristic X-ray energy dispersive spectrometer equipped with scanning electron microscope, accurately obtain the element composition and element distribution information of liquid environment sample.According to the microanalysis method of scanning electron microscope in-situ thick liquid layer of liquid environment sample of the present application, the backscattered electron beam of high resolution field emission scanning electron microscope equipped with energy dispersive spectrometer and the in-situ observation of the micro area morphology and spectroscopy of thick liquid layer of liquid environment sample of energy spectrum characterization are realized.

A system includes an electron source that generates an electron beam, a stage that holds a workpiece in a path of the electron beam, a magnetic objective lens disposed in a path of the electron beam, a focus element disposed in the path of the electron beam between the magnetic objective lens and the stage, and a backscattered electron detector disposed in the path of the electron beam between the focus element and the magnetic objective lens. Backscattered electrons, secondary electrons, and x-rays are emitted from the workpiece. The backscattered electrons are measured with the backscattered electron detector.

To implement a charged particle beam device including an iron thin film spin detector. The charged particle beam device includes: a charged particle column 201 configured to perform scanning on a sample 203 with a charged particle beam 202; a spin detector including an iron thin film 207, a plurality of coils 208 configured to magnetize the iron thin film, a conveying lens 206 configured to focus, on the iron thin film, secondary electrons 204 emitted from the sample due to irradiation of the charged particle beam, and an electron detector 210 configured to detect backscattered electrons 209 emitted due to the iron thin film being irradiated with the secondary electrons; and a control unit 217 configured to control switching of a magnetization direction of the iron thin film in synchronization with scanning of one line with the charged particle beam from the charged particle column.

The present invention relates to a horseshoe-type Josephson junction device and a method of manufacturing the device. The method of manufacturing is an improved method of manufacturing Josephson junctions by using 30 kV electron beam lithography in conjunction with the Dolan technique. While the 30 kV electron beam process is well documented in terms of steps and process, the geometry and contribution of backscattered electrons have not been correlated. The present invention addresses the challenge of reproducibility by improving the accuracy and consistency of the method of manufacturing. It is demonstrated that choosing appropriate geometries significantly increases the chances of success, as some designs are more robust to small variations in process parameters than others, a critical step toward reliable and scalable superconducting quantum circuits for the 30 kV electron beam process.

And electron counting and energy-enhanced diffraction analysis. A method for identifying phase characteristics of a sample is described. The method includes acquiring backscattered electron data of the sample using a direct charged particle detector. The direct charged particle detector includes an array of pixels and is configured to count the number of backscattered electrons detected by each pixel of the array or measure the energy of each backscattered electron detected by each pixel of the array when an electron beam is incident on the sample. The backscattered electron data includes data sets, each data set containing a number of backscattered electrons or measurement energy detected by each pixel of the array when the electron beam is incident on a respective region of the sample. The method further includes determining a respective statistical electronic characteristic or a respective electron spectrum for each data set, and identifying a respective phase characteristic for at least some regions of the sample based on the determined statistical electronic characteristic or the determined electron spectrum. A system for identifying phase characteristics of a sample is also described.

Based on the reference waveform (112) and the BSE signal waveform (211) representing the intensity of the backscattered electron signal from the pattern along the first direction extracted from the backscattered electron image, a difference waveform is generated, representing the relationship between the difference between the coordinates of the BSE signal waveform with the same backscattered electron signal intensity and the coordinates of the reference waveform, and the backscattered electron signal intensity. Based on the difference waveform, it is determined whether there is a shielding area (203) on the sidewall of the pattern that was not irradiated by the primary electron beam. Here, the reference waveform represents the intensity of the backscattered electron signal from the reference pattern along the first direction when a primary electron beam is scanned on the reference pattern, wherein the reference pattern is a pattern with sidewalls formed perpendicularly to the surface and bottom surface of the pattern.

The invention discloses a method for quantitatively characterizing three-dimensional parameters of surface particles of a polymer-based nanoparticle composite material. Comprising the following steps: acquiring a scanning electron microscope backscattered electron image of a sample; generating particle simulation back scattering electron images with different three-dimensional sizes and different depths on the surface layer of the material; respectively extracting image data of particles in the scanning electron microscope back scattering electron image and the Monte Carlo simulation back scattering electron image; respectively constructing numerical models of particle back scattering electron image data simulated by the Monte Carlo method and particle three-dimensional size and depth; predicting to obtain the three-dimensional size and depth data of the particles; and combining the predicted particle depth data with the two-dimensional coordinates of the particles in the scanning electron microscope back scattering electron image to obtain the three-dimensional space positions of the particles. The method is suitable for providing reliable data support for uniformity evaluation of surface particles of the polymer-based nanoparticle composite material, material performance optimization and industrial quality control.

This method includes: generating a backscattered-electron image of a multilayered structure (400) including a plurality of patterns formed in a plurality of layers by a scanning electron microscope (50); classifying a plurality of regions of a virtual multilayered structure (300) including a CAD pattern created from design data of the plurality of patterns into a plurality of groups according to CAD pattern arrays in a depth direction of the virtual multilayered structure (300); performing a matching between at least one of the plurality of patterns on the backscattered-electron image and a corresponding CAD pattern; calculating a brightness index value of a region on the backscattered-electron image corresponding to a region belonging to each group; and determining that there is a pattern defect in the region on the backscattered-electron image when the brightness index value is out of a standard range.