101 results about "Backscattered electron" patented technology

The invention provides a quantitative analysis method for red mud reaction degree, which comprises the following steps: preparing a cementing material sample containing red mud, acquiring a back scattered electron (BSE) image of the sample, performing semantic segmentation on the BSE image by using a deep learning model, identifying a red mud correlation phase, and determining the red mud reaction degree on the basis of a semantic segmentation result. Calculating the area fraction of the red mud related phase in the image, converting the area fraction into the volume fraction of the red mud, and calculating the reaction degree of the red mud based on the volume fraction; the invention aims to overcome the limitations of strong indirectly, low precision and high cost in the prior art, realizes direct, objective and visual quantification of the red mud reaction degree by accurately identifying the related phase of the red mud and establishing the area-volume equivalent relationship, and provides a reliable technical means for optimizing the red mud composite cementing material.

The invention provides a gold mineral exploration method, device and system and a storage medium. Relates to the technical field of mineral exploration. The gold mineral exploration method comprises the following steps: acquiring a backscattered electron image of a sample to be detected, and screening bright mineral phase particles based on a preset gray threshold; performing energy spectrum analysis to obtain an actually measured energy spectrum corresponding to each bright mineral phase particle; and determining the gold-bearing minerals in the to-be-detected sample according to the actually measured energy spectrum. According to the method provided by the invention, the gold-bearing mineral is determined by analyzing the actually measured energy spectrum, and the identification accuracy and the automation efficiency of the micro-fine gold are improved; the method can effectively solve the problem of missed judgment caused by energy spectrum signal mixing and low matching degree due to fine or wrapped particles in a traditional method, so that more accurate process mineralogy data is obtained, and a reliable basis is provided for formulating an efficient dressing and smelting recovery scheme.

Systems and methods taught herein utilize a single detector to provide both unidimensional data (e.g., for direct topographical imaging) and multidimensional data (e.g., for crystallographic data) for a sample that is interrogated with a charged particle beam. In some examples, unidimensional data can include signal intensity due to backscattered electrons received across the entire detector surface while multidimensional data can include signal intensity due to backscattered electrons as a function of pixel position. By obtaining unidimensional data and multidimensional data from a single detector, the unidimensional data and multidimensional data can be obtained at a same location, at a same time, or both at the same location and same time.

The invention relates to a method for evaluating distribution uniformity of silicon in a CVD (chemical vapor deposition) silicon-carbon composite material. The method comprises the following steps: (S1) acquiring a scanning electron microscope backscattered electron image and a silicon element surface distribution diagram of a sample; (S2) carrying out binarization processing on the silicon element surface distribution diagram through image analysis software, and counting the area proportion sigma Si of the deposited silicon particles; (S3) combining the carbon mass fraction c% of the sample and the correction coefficient delta, and calculating the mass fraction w% of undeposited silicon particles; the correction coefficient delta is obtained through calibration: under the same imaging condition, selecting a region in which all particles are completely covered by a silicon signal and the number of complete particles is not less than 50 from a silicon element surface distribution diagram as a'complete silicon deposition region '; and carrying out the same binarization processing on the silicon particles, wherein the area ratio sigma Si0 of the silicon particles is a correction coefficient delta. The evaluation method provided by the invention has high accuracy, wide applicability and excellent measurement repeatability, and is a scientific and reliable quantitative analysis means.

According to the high-gain back scattering detector and the observation system provided by the invention, the detector can be adaptively integrated with the immersed objective lens, and the combination scheme can realize the remarkable advantage of no loss of the working distance. According to the detector provided by the invention, the light path conduction structure is optimized, and the detector is cooperatively matched with the immersed objective lens, so that the advantage of high-resolution imaging of the immersed objective lens is reserved, the efficient capturing capability of the detector on backscattered electrons is maintained, and sufficient working distance can still be ensured in a high-precision observation scene. The flexible optical fiber is adopted to complete optical signal transmission in the sample bin, the length and the overall size of the light guide pipe can be effectively reduced, and the situation that a large-size light guide pipe of a conventional scintillator type back scattering electron detector occupies too much space in the sample bin is avoided. In addition, the detector realizes four-channel independent imaging of the scintillator type back scattering electron detector through a customized four-channel light guide pipe by connecting an independent optical fiber and a PMT.

This invention discloses a method for identifying the origin of quartz based on multimodal signal fusion using scanning electron microscopy (SEM). It utilizes only one SEM equipped with an energy dispersive spectroscopy (EDS) probe, a cathodoluminescence (CAT) probe, and a backscattered electron diffraction (BSE) probe. By comprehensively employing multiple indicators, including the coefficient of variation of CL band width (a), the Al-Ti influence coefficient (b), the lattice orientation difference influence coefficient (c), and the relative gravity coefficient of inclusion type (d), the method determines whether a quartz sample is of hydrothermal or metamorphic origin. This invention achieves rapid and accurate identification of the origin of quartz.

The application relates to a scanning electron microscope measurement method for the thickness of a metal compound layer, which comprises the following steps: obtaining a cross section containing the compound layer by wire cutting, and polishing after inlaying; observing under a scanning electron microscope, selecting a copper-tin alloy compound layer to be measured, selecting a backscattering electron probe to obtain a composition contrast image, adjusting the image contrast so that the measured object and the matrix have obvious differences; selecting a magnification of 2500 times matching the thickness of the metal compound layer, obtaining a high-definition backscattering electron image at a scanning speed of 28 seconds / frame; and quantitatively and finely measuring the thickness of the metal compound layer by using ImageJ software. The advantages of the application are as follows: the metal compound layer is extracted by using the ImageJ image processing software, the area is calculated to obtain the average thickness of the film thickness measurement method, not only the accurate alloy layer thickness information is obtained, but also the standard deviation value of the measured object is obtained to evaluate the uniformity of the measured object; the measurement method improves the accuracy and can be applied to detection and analysis practices.

The present application relates to the technical field of electron-optical imaging, and particularly relates to a backscattered electron scintillator detector device and a detection method, which comprises a backscattered electron receiving sensor, an optical condensing group, an optical transmission group, a photoelectric conversion system and a detector protection mechanism. By using a scintillator as a sensor, a backscattered electron signal generated by an industrial electron gun electron beam is received, and then the electronic information carried by the backscattered electron is converted into an optical signal and transmitted to an area far away from the workpiece. Finally, a high signal-to-noise ratio voltage analog signal is formed by the photoelectric conversion system, avoiding the influence of spatial noise and other interference signals on weak signal transmission in the existing analog signal transmission process. For detailed topographic features, a backscattered electron image with high resolution can be displayed.

The present invention provides a positive electrode active material comprising at least one of a single particle consisting of one nodule and a quasi-single particle which is a composite of 30 or fewer nodules, wherein the degree of single crystallization defined by formula (A) is 2.7 or more. Formula (A): Degree of single crystallization = [Formula I] In formula (A), Ri is a radius of an i-th grain measured when a cross-section of an electrode is subjected to electron backscatter diffraction (EBSD) analysis after ion milling treatment of the electrode manufactured by applying the positive electrode active material, and is a value measured in units of ㎛, but the value substituted into formula (A) is a unitless number that does not include a unit, and n is a total number of grains measured through the electron backscatter diffraction (EBSD) analysis.

Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

The invention discloses an electron detection device and a scanning electron microscope, and relates to the technical field of scanning electron microscopes. The device comprises an objective lens, the objective lens comprises a first coil used for forming a magnetic lens and a second coil used for forming an immersion magnetic field, the first coil and the second coil are wrapped by a first pole shoe and a second pole shoe respectively in a non-closed mode, the first pole shoe is provided with an axial channel part, the second pole shoe is provided with a conical extension part, and a diaphragm hole is formed in the bottom of the conical extension part; the detector is arranged on the axial channel part or the conical extension part and is positioned above the diaphragm hole; and the first control electrode is arranged at the inner side of the diaphragm hole and is used for generating an electric field so as to cooperate with the immersion magnetic field generated by the second coil to guide or prevent the secondary electrons from reaching the detector. According to the electron detection device, through the arrangement of the first control electrode, secondary electrons can be guided to the detector, so that the collection efficiency of the secondary electrons can be improved, the secondary electrons can be prevented from reaching the detector, and the detector can conveniently collect backscattered electrons.

This invention provides a high-resolution, low-energy electron microscope and a mask inspection method for providing topographic information. [Solution] A corrected scanning electron microscope (CSEM) and a method for operating the CSEM are presented for selectively separating material contrast from topographic contrast. The microscope and method enable high imaging resolution by backscattered electrons generated from low-energy primary electrons. The CSEM and method are applicable to mask modification and circuit editing processes having resolution requirements in the low nm range or even lower range.

The invention discloses an analysis method for damage residues of an engine blade. The method comprises the following steps: spraying and cleaning the injured part by using anhydrous alcohol; a special marking pen containing electrolytic copper powder is adopted for marking; adhering the extracted residues and the marks by using a carbon conductive adhesive tape; sealing and storing the extracted sample in a self-sealing bag; and finally, back scattering electron imaging and energy spectrum analysis are carried out through a scanning electron microscope. The method solves the technical problems of long period caused by leaf decomposition, secondary pollution caused by cutting sampling, low contrast between residues and a matrix, difficulty in distinguishing and the like in the traditional analysis method. Through a unique marking system and an extraction process, in-situ rapid sampling can be carried out after engine test run, the residue identification efficiency and the component analysis accuracy are remarkably improved, and a reliable technical means is provided for blade damage fault analysis.

A positive electrode includes a positive electrode active material that includes a lithium nickel-based composite oxide and is in a form of a single particle. A ratio of a volume cumulative average particle diameter (D50) of the positive electrode active material measured using a particle size analyzer to a grain size of the positive electrode active material measured using backscatter electron diffraction after ion milling of the positive electrode is about 1.6 to about 1.8.

A system includes an electron source that generates an electron beam, a stage that holds a workpiece in a path of the electron beam, a magnetic objective lens disposed in a path of the electron beam, a focus element disposed in the path of the electron beam between the magnetic objective lens and the stage, and a backscattered electron detector disposed in the path of the electron beam between the focus element and the magnetic objective lens. Backscattered electrons, secondary electrons, and x-rays are emitted from the workpiece. The backscattered electrons are measured with the backscattered electron detector.

The present invention relates to a horseshoe-type Josephson junction device and a method of manufacturing the device. The method of manufacturing is an improved method of manufacturing Josephson junctions by using 30 kV electron beam lithography in conjunction with the Dolan technique. While the 30 kV electron beam process is well documented in terms of steps and process, the geometry and contribution of backscattered electrons have not been correlated. The present invention addresses the challenge of reproducibility by improving the accuracy and consistency of the method of manufacturing. It is demonstrated that choosing appropriate geometries significantly increases the chances of success, as some designs are more robust to small variations in process parameters than others, a critical step toward reliable and scalable superconducting quantum circuits for the 30 kV electron beam process.

And electron counting and energy-enhanced diffraction analysis. A method for identifying phase characteristics of a sample is described. The method includes acquiring backscattered electron data of the sample using a direct charged particle detector. The direct charged particle detector includes an array of pixels and is configured to count the number of backscattered electrons detected by each pixel of the array or measure the energy of each backscattered electron detected by each pixel of the array when an electron beam is incident on the sample. The backscattered electron data includes data sets, each data set containing a number of backscattered electrons or measurement energy detected by each pixel of the array when the electron beam is incident on a respective region of the sample. The method further includes determining a respective statistical electronic characteristic or a respective electron spectrum for each data set, and identifying a respective phase characteristic for at least some regions of the sample based on the determined statistical electronic characteristic or the determined electron spectrum. A system for identifying phase characteristics of a sample is also described.

Based on the reference waveform (112) and the BSE signal waveform (211) representing the intensity of the backscattered electron signal from the pattern along the first direction extracted from the backscattered electron image, a difference waveform is generated, representing the relationship between the difference between the coordinates of the BSE signal waveform with the same backscattered electron signal intensity and the coordinates of the reference waveform, and the backscattered electron signal intensity. Based on the difference waveform, it is determined whether there is a shielding area (203) on the sidewall of the pattern that was not irradiated by the primary electron beam. Here, the reference waveform represents the intensity of the backscattered electron signal from the reference pattern along the first direction when a primary electron beam is scanned on the reference pattern, wherein the reference pattern is a pattern with sidewalls formed perpendicularly to the surface and bottom surface of the pattern.

The invention discloses a method for quantitatively characterizing three-dimensional parameters of surface particles of a polymer-based nanoparticle composite material. Comprising the following steps: acquiring a scanning electron microscope backscattered electron image of a sample; generating particle simulation back scattering electron images with different three-dimensional sizes and different depths on the surface layer of the material; respectively extracting image data of particles in the scanning electron microscope back scattering electron image and the Monte Carlo simulation back scattering electron image; respectively constructing numerical models of particle back scattering electron image data simulated by the Monte Carlo method and particle three-dimensional size and depth; predicting to obtain the three-dimensional size and depth data of the particles; and combining the predicted particle depth data with the two-dimensional coordinates of the particles in the scanning electron microscope back scattering electron image to obtain the three-dimensional space positions of the particles. The method is suitable for providing reliable data support for uniformity evaluation of surface particles of the polymer-based nanoparticle composite material, material performance optimization and industrial quality control.

This method includes: generating a backscattered-electron image of a multilayered structure (400) including a plurality of patterns formed in a plurality of layers by a scanning electron microscope (50); classifying a plurality of regions of a virtual multilayered structure (300) including a CAD pattern created from design data of the plurality of patterns into a plurality of groups according to CAD pattern arrays in a depth direction of the virtual multilayered structure (300); performing a matching between at least one of the plurality of patterns on the backscattered-electron image and a corresponding CAD pattern; calculating a brightness index value of a region on the backscattered-electron image corresponding to a region belonging to each group; and determining that there is a pattern defect in the region on the backscattered-electron image when the brightness index value is out of a standard range.

The present invention relates to a positive electrode material, and to a positive electrode and a lithium secondary battery comprising same. The positive electrode material comprises a first positive electrode active material in the form of secondary particles having a primary particle size of 1.5 μm or greater and 5.0 μm or less, and a second positive electrode active material in the form of secondary particles having a primary particle size of less than 1.0 μm, wherein the first positive electrode active material has a larger average particle diameter (D50) according to a volume cumulative distribution measured using a laser diffraction particle size analyzer than the second positive electrode active material, and the number of grains per unit area, calculated by equation 1 of the present invention from an electron backscatter diffraction (EBSD) pattern of a cross-sectional SEM image of the positive electrode material, satisfies a specific range, thereby improving electrochemical properties, such as capacity characteristics and efficiency, of an electrode and a battery comprising positive electrode material.

The application discloses a kind of quantitative channel contrast imaging methods based on scanning electron microscope, electronic equipment and medium, comprising: the polycrystalline sample is placed into scanning electron microscope system, determines ROI, obtains crystal data;Adjust the state of polycrystalline sample, obtain the cross-correlation diagram of backscattered electron image and diffraction contrast value image, so that backscattered electron beam scanning area and ROI coincide;In ROI, optional one position, calculate ECP under the current electron beam energy;Determine target orientation on ECP, determine the optimal path of rotating polycrystalline sample to target orientation;Get backscattered electron image before and after rotation and cross-correlation, move polycrystalline sample so that backscattered electron beam scanning area before and after rotation coincide;Adjust scanning electron microscope system by the above steps, collect a series of backscattered electron images of ROI.The application can realize the characterization and analysis of block sample dislocation, nanotwin, stacking fault and other crystal defects by scanning electron microscope.

This invention belongs to the field of scanning electron microscopy and discloses a multi-view backscattered electron imaging device and method for low-voltage scanning electron microscopy. It employs a design where a ring-shaped microchannel plate is placed between the objective lens and the sample, aligned with the optical axis. A central through-hole allows the primary electron beam to pass through. The input surface faces the sample, and the output surface is close to the readout anode unit. The readout anode unit is divided into multiple concentric rings to distinguish polar angle signals, and each ring is further uniformly divided into multiple independent fan-shaped surfaces to capture azimuth information. This device significantly improves the signal-to-noise ratio and image quality of low-voltage imaging. It is compatible with large, flat samples without requiring sample tilting, avoiding the geometric defects of traditional side-mounted detectors. Multi-view signal separation provides rich angular information, enhances image stereoscopicity and shadow effects, supports simple 3D reconstruction to infer surface morphology features, and reduces information waste, meeting the high-precision analysis needs of surface-sensitive materials and non-conductive samples.

The application provides a spatial orientation high-resolution mapping method and system for single crystal EBSD, comprising the following steps: S1: collecting diffraction signals of a single crystal sample by a backscattering electron diffraction technology to obtain Euler angle parameters and corresponding spatial coordinates of pixel points; S2: converting the obtained Euler angle parameters into polar angle parameters according to a crystallographic coordinate transformation relationship, and establishing a corresponding relationship between the polar angle parameters and the spatial coordinates; S3: discretizing continuous polar angle information into polar angle grid units; S4: mapping the polar angle parameters of each pixel point to the polar angle grid units to realize attribution determination and partition aggregation of the pixel points in an angle space; and S5: explicitly representing spatial distributions corresponding to each angle unit to establish a mapping relationship between the polar angle and the spatial coordinates.

The application discloses a scanning electron microscope, and belongs to the technical field of semiconductor detection. The scanning electron microscope comprises an electron beam source configured to emit an electron beam; an objective lens configured to focus the electron beam onto a sample; the objective lens comprises a first magnetic circuit assembly and a second magnetic circuit assembly, and a gap is formed between the first magnetic circuit assembly and the second magnetic circuit assembly; at least one set of detection assemblies configured to detect signals generated by interaction between the electron beam and the sample, wherein the detection assemblies are arranged in the gap; each set of the at least one set of detection assemblies comprises a first detection unit and a second detection unit, each first detection unit is arranged on a transmission path of a backscattered electron signal and configured to detect the backscattered electron signal, and each second detection unit is arranged on a transmission path of a secondary electron signal and configured to detect the secondary electron signal. The application takes the gap as a detection area, and can separately detect the backscattered electron signal and the secondary electron signal.

An embodiment corresponds to an inspection apparatus that includes an electron beam source configured to emit an electron beam, and an objective lens set configured to project, based on the electron beam, an electron beamlet onto a target area. The inspection apparatus further includes a detector between the objective lens set and the target area and configured to detect backscattered electrons beamlets from the target area. The detector includes a substrate having an opening through which the electron beamlet passes, a plurality of sensing cells disposed on the substrate and surrounding the opening. Each sensing cell of the plurality of sensing cells has a normal direction tilted with respect to a normal direction of the substrate.

Provided is a Zn-Al-Mg-Si-based plated steel sheet which has excellent chemical conversion treatability, suppressed swelling under a coating film, and corrosion resistance to a dissimilar metal joint. A Zn-Al-Mg-Si plated steel sheet according to the present invention has a base steel sheet and a plating layer formed on at least one surface of the base steel sheet, and is characterized in that the plating layer has a Zn-Al-MgZn2 ternary eutectic structure and a composition containing, in mass%, 0.50-3.00% of Mg, 0.10-3.00% of Al, 0.010-0.20% of Si, and 0.30% or less of Fe, with the remainder being Zn and unavoidable impurities, and in that the plating layer has a Zn-Al-Mg-Si ternary eutectic structure. In a backscattered electron image having a magnification of 5000 times obtained using a scanning electron microscope at an acceleration voltage of 7.0 kV, in a ternary eutectic structure, needle-like Mg2Si alloy phases are present in a number density of less than 100,000 / mm2, and needle-like Mg2Si alloy phases are present in a number density of at least 500 / mm2 when the same operation is performed at an acceleration voltage of 15.0 kV, and the number density of the needle-like Mg2Si alloy phases is less than 100,000 / mm2 when the same operation is performed at an acceleration voltage of 15.0 kV, and the number density of the needle-like Mg2Si alloy phases is less than 100,000 / mm2. The number density of the needle-like SiO2 oxide phases is more than 100000 / mm < 2 >.

A method and system for compensating for response time differences of different types of sensors of a charged particle system. This involves acquiring first and second secondary electron images and backscattered electron images overlying the target, the images being scanned with an irradiation electron beam according to first and second scan patterns. A secondary electron displacement and a backscatter electron displacement are determined based on a registration between the first image and the rotated second image. Compensated displacements are determined based on these displacements. These images are acquired using a pixel capture period that is lower than the response period of the backscatter electron sensor used to generate the first backscatter electron image.

A method includes depositing an inter-metal dielectric (IMD) layer over a conductive line. A via opening is formed in the IMD layer and directly over the conductive line. A width of the conductive line is greater than a width of the via opening. An overlay measurement is performed. The overlay measurement includes obtaining a backscattered electron image of the via opening and the conductive line and determining an overlay between the via opening and the conductive line according to the backscattered electron image.

Systems and methods taught herein utilize a single detector to provide both unidimensional data (e.g., for direct topographical imaging) and multidimensional data (e.g., for crystallographic data) for a sample that is interrogated with a charged particle beam. In some examples, unidimensional data can include signal intensity due to backscattered electrons received across the entire detector surface while multidimensional data can include signal intensity due to backscattered electrons as a function of pixel position. By obtaining unidimensional data and multidimensional data from a single detector, the unidimensional data and multidimensional data can be obtained at a same location, at a same time, or both at the same location and same time.