The invention discloses a facility for manufacturing vertical GaN-based LED chips by metal substrates. The facility comprises a computer information acquisition controller, a reaction room, a metal substrate feeding room, a gaseous-phase metal organism supply device, a nitrogen and/or hydrogen and/or ammonia supply device, an ECR (electron cyclotron resonance) plasma resource supply device, a vacuum degree meter and an imaging display formed relatively by a reflection high-energy electron diffractometer and a fluorescent screen, and is mainly characterized by further comprising a magnetic field coil support cylinder, a photoelectric alarm, a Faraday cylinder, an electronic probe and a direct-current bias voltage. The facility is reasonable in structure, high in film-coating quality and working efficiency, low in chip manufacture cost and the like.