Facility for manufacturing vertical GaN-based LED chips by metal substrates

Abstract

The invention discloses a facility for manufacturing vertical GaN-based LED chips by metal substrates. The facility comprises a computer information acquisition controller, a reaction room, a metal substrate feeding room, a gaseous-phase metal organism supply device, a nitrogen and/or hydrogen and/or ammonia supply device, an ECR (electron cyclotron resonance) plasma resource supply device, a vacuum degree meter and an imaging display formed relatively by a reflection high-energy electron diffractometer and a fluorescent screen, and is mainly characterized by further comprising a magnetic field coil support cylinder, a photoelectric alarm, a Faraday cylinder, an electronic probe and a direct-current bias voltage. The facility is reasonable in structure, high in film-coating quality and working efficiency, low in chip manufacture cost and the like.

Description

technical field [0001] The invention relates to a device for preparing a vertical GaN-based LED chip by using a metal substrate, in particular to an electron cyclotron resonance plasma-enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) device using a cavity-coupled microwave plasma source, belonging to Reactive vapor deposition coating equipment technical field. Background technique [0002] The GaN (gallium nitride)-based LED (light-emitting diode) chip is an LED chip that is coated with a multi-layer GaN-based thin film (nm to μm level) composite coating on the surface of a metal substrate such as aluminum, copper or stainless steel. It can be used to prepare optoelectronic devices such as LEDs covering the spectral range from near-infrared to deep ultraviolet. The full-color display screen made of GaN-based LEDs can be used for multi-color information display in various indoor and outdoor occasions, while white GaN-based LEDs can be used for white lighting an...

AI Technical Summary

Problems solved by technology

[0006] Although the above-mentioned existing equipment provides technical equipment support for the preparation of vertical GaN-based LED chips on metal substrates, and has made breakthroughs in low-temperature deposition technology, after all, due to the structural deficiencies in the above-mentioned existing patented technology , such as the unreasonable environment for the deposition of gas phase substances; the unreasonable layout of gas phase substances into the reaction chamber (epitaxy chamber); There are some problems in the coating quality, coating efficiency and preparation cost of the finished vertical GaN-based LED chips.

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