Anti-total-dose shielding device

A shielding device, anti-total dose technology, applied in aerospace safety/emergency devices, aerospace aircraft radiation protection devices, etc. The effect of improving satellite life and reliability

Inactive Publication Date: 2012-06-13
SHANGHAI SATELLITE ENG INST
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The problem to be solved by the present invention is to overcome the bremsstrahlung problem existing in the above-mentioned existing reinforcement materials, thereby providing a shielding device that can solve the bremsstrahlung problem and has a better anti-total dose effect

Method used

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Embodiment Construction

[0015] Before describing the present invention in detail, the concepts involved in the present invention will be explained accordingly.

[0016] High Z: The high Z mentioned in the present invention refers to elements with high atomic number, specifically, materials with atomic number ≥ 50, including tungsten, tantalum, barium, osmium, iridium, platinum and gold .

[0017] Low Z: The low Z mentioned in the present invention refers to elements with low atomic numbers, specifically, materials with atomic numbers ≤ 30, including hydrogen, lithium, carbon, boron, nitrogen, aluminum, and silicon , copper, nickel, titanium, chromium, cobalt and iron, or compounds (or alloys) between them.

[0018] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0019] refer to figure 2 , the anti-total dose shielding device of the present invention comprises a first low-Z layer, a high-Z layer and a second low-Z laye...

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Abstract

The invention provides an anti-total-dose shielding device, which comprises a first low Z layer, a high Z layer and a second low Z layer, wherein the first low Z layer is used for moderating and shielding primary electrons, the high Z layer is used for scattering electrons and absorbing secondary bremsstrahlung photons, and the second low Z layer is used for absorbing photoelectrons and back scattered electrons generated in high Z materials and restraining secondary photoelectron emission and electron back scattering generated by action of X-rays and materials. The first low Z layer is the outmost layer and close to the space outside a satellite, and the second low Z layer is the innermost layer and close to a component to be shielded. The first low Z layer and the second low Z layer are made of materials formed by elements of atomic numbers smaller than or equal to 30. The thickness of the first low Z layer ranges from 1 to 3mm, and the thickness of the second low Z layer ranges from 0.2 to 0.4mm. The high Z layer is made of materials formed by elements of atomic numbers larger than or equal to 50, and the thickness of the high Z layer ranges from 0.1 to 0.3mm.

Description

technical field [0001] The invention relates to the field of anti-total dose shielding of aerospace vehicles, in particular to an anti-total dose shielding device. Background technique [0002] When the spacecraft is flying, the space ions in the space environment will be absorbed by the component materials and stored in the components, which will cause the spacecraft to malfunction and seriously affect the service life and reliability of the satellite. dose. The treatment of components to avoid this phenomenon is called total dose hardening. The existing anti-total dose reinforcement method is generally to paste heavy metal materials such as lead skin or tantalum skin on the surface of components. exist figure 1 In an example shown, to reinforce a device on a circuit board against total dose, the existing method is to bind lead or tantalum skins on the surface of the device with binding wires. In other examples, the lead skin or the tantalum skin can also be pasted on t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B64G1/54
Inventor 李强韦锡峰信太林沈嵘康
Owner SHANGHAI SATELLITE ENG INST
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