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VDMOS device with total dose irradiation resistance and manufacturing method thereof

A technology of anti-total dose and production method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of inability to manufacture VDMOS devices, increase the thickness of gate oxide layer, etc., and achieve improved resistance to single event gate wear ability, high dielectric constant, and the effect of reducing transition accumulation

Active Publication Date: 2019-06-28
浙江航芯源集成电路科技有限公司
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Problems solved by technology

The main method to improve the anti-single-event gate-through ability of the device is to increase the thickness of the gate oxide layer, which is contradictory to improving the anti-total dose radiation ability of the device. Therefore, it is impossible to manufacture VDMOS devices suitable for applications in space environments only by reducing the thickness of the gate oxide.

Method used

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  • VDMOS device with total dose irradiation resistance and manufacturing method thereof
  • VDMOS device with total dose irradiation resistance and manufacturing method thereof
  • VDMOS device with total dose irradiation resistance and manufacturing method thereof

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Embodiment Construction

[0026] Embodiments of the present invention are described in detail below, wherein the same or similar reference numerals represent the same or similar elements or elements with similar functions. The embodiments described below by referring to the figures are exemplary, and are only used to explain the present invention and not to limit the present invention.

[0027] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It should also be understood that terms such as those defined in commonly used dictionaries should be understood to have a meaning consistent with the meaning in the context of the prior art, and unless defined as herein, will not be used in an idealized or overly formal meaning to explain.

[0028] The present invention will be further described below in c...

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Abstract

The invention provides a VDMOS device with total dose irradiation resistance and a manufacturing method thereof. The device comprises a composite gate oxide layer, a polysilicon gate electrode and anN-epitaxial layer. The composite gate oxide layer comprises a silicon dioxide layer and a silicon nitride layer, and the composite gate oxide layer is between the N-epitaxial layer and the polysilicongate. The present invention provides the VDMOS device with a two-layer composite gate oxide structure and total dose irradiation resistance and the manufacturing method thereof.

Description

technical field [0001] The invention relates to the field of MOS devices, more specifically, it relates to a VDMOS device with anti-total dose radiation and a manufacturing method thereof. Background technique [0002] The power VDMOS field effect transistor (vertical double-diffused metal oxide semiconductor) is a power device developed in the 1980s that conducts vertically to the surface of the device. It has the advantages of both bipolar devices and MOS transistors, and there is no secondary breakdown. It has the advantages of fast switching speed, low driving power, good frequency characteristics, high transconductance linearity, low on-resistance, good thermal stability, etc., and is widely used in various electronic devices. These advantages make VDMOS devices more and more widely used in extremely complex environments such as aerospace and nuclear engineering. [0003] There are a large number of charged particles and cosmic rays in space, and there will be strong ...

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Application Information

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IPC IPC(8): H01L29/423H01L29/51H01L29/78H01L21/336H01L21/28
Inventor 高群陈华莫炯炯
Owner 浙江航芯源集成电路科技有限公司
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