Anti-Total Dose Effect Reinforcement Method for Flash Storage Circuit

Abstract

The present invention provides a flash memory storage circuit anti-total dose effect reinforcement method, comprising: step 1, providing a flash memory storage array; step 2, compiling initial information into coded information, and inputting the flash memory storage array, the binary code in the coded information " The number of "0" and "1" is equal; Step 3, interpret the coding information in the flash memory storage array, and count the number of binary codes "0" and "1" obtained from the interpretation; Step 4, compare the statistical results, When the numbers of the interpreted binary codes "0" and "1" are equal, the coded information is decoded and read; when the interpreted numbers are not equal, the read voltage of the flash storage array is adjusted until the interpreted binary code "" The number of 0" and "1" is equal. The invention can effectively maintain the performance stability of the flash storage circuit by adjusting the reading voltage.

Description

technical field [0001] The invention relates to the technical field of total dose effect suppression, in particular to a method for strengthening the anti-total dose effect of a flash storage circuit. Background technique [0002] Flash memory (Flash) memory has the advantages of online programming, data information will not be lost when power is turned off, high read and write speed, and good vibration resistance. In recent years, it has been widely used in aerospace electronic systems. Various high-energy particles in space will seriously affect various electronic components including Flash memory, causing various radiation effects. Among them, the total dose effect is one of the most important problems that Flash memory needs to face in space applications. [0003] The total dose effect is the ionizing radiation effect of cumulative dose, which is a process in which long-term radiation dose accumulation leads to device failure. The damage mechanism of the total dose eff...

AI Technical Summary

Problems solved by technology

[0005] However, hardening methods for memory circuits such as EDAC do not work in situations where floating-gate flash memory circuits are irradiated and there is still a storage window between the maximum threshold voltage of the transistor storing a “1” and the minimum threshold voltage of a transistor storing a 0. The ability to detect errors early and automatically correct one-bit errors and detect two-bit errors is clearly insufficient

In addition, because the reinforcement method of memory circuits such as EDAC is mainly completed automatically by hardware design, it needs to occupy a large chip area

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