Novel integrated circuit resisting NMOS element total dose radiation

Abstract

The invention discloses a novel integrated circuit resisting total dose radiation of N-Metal-Oxide-Semiconductor (NMOS), belonging to the technical field of electronics. The novel integrated circuit resisting total dose radiation of the NMOS comprises an NMOS element and can also comprises a PMOS element, wherein the elements are insulated by a groove on a substrate. The novel integrated circuit resisting total dose radiation of NMOS is characterized in that: in the groove adjacent to the NMOS element, an air interface layer exists between a groove filling material and a substrate material arranged at one side of the groove filling material, and another air interface layer also exists between the groove filling material and a substrate material arranged at the other side of the groove filling material. The air interface layers are formed through etching contact parts among the groove filling material and the substrate materials. The invention can be applied to spaceflight, military area, nuclear power, high energy physics and other industries relevant to total dose radiation.

Description

technical field [0001] The invention relates to an integrated circuit, in particular to a novel integrated circuit with an NMOS device capable of resisting total dose radiation, and belongs to the field of electronic technology. Background technique [0002] Integrated circuit technology is being more and more widely used in industries related to total dose radiation, such as aerospace, military, nuclear power and high-energy physics. Moreover, with the continuous improvement of the integration level of integrated circuits, the size of semiconductor devices is decreasing day by day. Shallow trench isolation technology is becoming the mainstream technology for electrical isolation between devices in integrated circuits due to its excellent device isolation performance. However, due to the damage of the silicon dioxide oxide layer in the device by the total dose of irradiated particles, a large amount of fixed positive charges will be generated in the oxide layer of the shallo...

AI Technical Summary

Problems solved by technology

Before the device supervisor is turned on, the supervisor is in the off state, but at this time the parasitic tube has been turned on, resulting in a large off-state leakage current

This off-state leakage current will greatly increase the power consumption of the integrated circuit, and have a relatively large negative impact on the reliability of the integrated circuit, which has become a total dose radiation reliability problem that needs to be solved urgently at this stage.

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