The invention provides a manufacturing method of a sigma trench and a
semiconductor device thereof, and the manufacturing method of the sigma trench comprises the steps: providing a substrate, forming a gate structure on the substrate, and forming source and drain regions in the substrate at two sides of the gate structure; anisotropic
dry etching is carried out, and a first groove is formed in the source drain region; performing an isotropic
chemical reaction, raising the temperature after the reaction is finished to sublimate a
reaction product, forming a second groove in the first groove, enabling the top of the side wall of the second groove to be located at the bottom of the gate structure, and forming an
undercut at the bottom of the gate structure; and performing wet
etching, and forming a sigma groove in the second groove. According to the Sigma trench formed by the three steps of anisotropic
dry etching, isotropic
chemical reaction and wet
etching, the top of the side wall of the Sigma trench is located at the bottom of the gate structure, and the
undercut is formed at the bottom of the gate structure, so that the
linear distance between the source region and the drain region is shortened, the resistance is reduced, and the performance of the device is improved.