14140results about How to "Simple manufacturing method" patented technology

This invention relates to a process for transforming methanol to aromatic hydrocarbons, comprising: use methanol as raw material, with modified ZSM-5 molecular sieve as catalyst, under conditions of operation pressure 0.1-5.0Mpa, operation temperature 300-460Deg C, raw material liquid air speed 0.1-6.0h-1, transformed to products with aromatic hydrocarbons as main components; separate the gas-phase products lower carbon hydrocarbons from the liquid-phase C5+ hydrocarbons by cooling separation; the liquid-phase C5+ hydrocarbons then can be separated to be aromatic hydrocarbons and non-aromatic hydrocarbons by extracting separation. This invention is characterized of high total selectivity of aromatic hydrocarbons and flexible process operation.

A semiconductor structure with active zones, such as light diodes or photodiodes, including a substrate (SUB) with at least two active zones (AZ1-AZn), each of which emits or absorbs a radiation of differing wavelength. According to the invention, a multi-wavelength diode may be achieved, in which a first (lower) active zone (AZ1) is grown on a surface of the substrate (SUB), with one or several further active zones (AZ1-Azn) epitaxially grown one on the other and the active zones (AZ1-AZn) are serially connected from the lower active zone (AZ1) to an upper active zone (AZn), by means of tunnel diodes (TD1-TDn), serving as low-impedance resistors.

The invention relates to an NAND memory and a preparation method therefor. The NAND memory comprises a silicon substrate, a plurality of peripheral devices, a plurality of NAND strings formed above the peripheral devices, a monocrystal silicon layer formed above the multiple NAND strings, and one or more first interconnection layers formed between the multiple peripheral devices and the multiple NAND strings, wherein the monocrystal silicon layer and the multiple NAND strings are in contact connection. By manufacturing array devices and peripheral devices separately, mutual influence to the processing process of the two devices in manufacturing can be avoided, so that the problem of limitation to the post layer manufacturing by the temperature of the former layer in the prior art can be solved, thereby obtaining high peripheral device performance; and in addition, the array devices are overlaid on the peripheral devices, so that high device density is realized.

A method of manufacturing an antenna includes forming a base including a synthetic resin, forming a conductive pattern on the base and forming a circuit pattern by sintering the conductive pattern by applying heat. The conductive pattern includes a conductive paste and a binding material binding the base and the conductive pattern. The conductive paste includes a metal.

The invention discloses ion mineralization stabilizer for treating soil with heavy metal pollution and an application method thereof. The ion mineralization stabilizer comprises, by weight percent, 5-30% of sulfur-based compound, 10-50% of phosphor-based compound, 10-50% of calcium-based compound, and 10-30% of silicon-based compound. The materials are respectively ground into powders with particle size not less than 200 meshes, and the powders are proportionally mixed well. The application method of the ion mineralization stabilizer for treating soil with heavy metal pollution includes: detecting arsenic content and leaching toxicity of the soil to be treated, placing the ion mineralization stabilizers in different proportions on the surface of the soil to be treated according to pollution level, well mixing to form mixed soil by ploughing and stirring, adding water to keep the water content of the mixed soil no less than 25%, covering the mixed soil with moisturizing material, curing for at least 5 days to keep heavy metals in the mixed soil to form stable minerals.

The invention discloses a semiconductor device and a preparation method thereof. The semiconductor device sequentially comprises a silicon substrate, one or more NAND strings formed at the upper partof the silicon substrate, one or more peripheral devices formed at the upper parts of the NAND strings, a monocrystal silicon layer formed at the upper parts of the one or more peripheral devices, andone or more first interconnection layers formed between the one or more peripheral devices and between the one or more NAND strings from bottom to top, wherein the peripheral devices are bonded withan array device through a bonding interface. The preparation process that two devices are affected by each other when prepared can be avoided through separating preparation of the array device and theperipheral devices, so that the problem of temperature limitation of preparation of the front layer to preparation of the back layer in the prior art is solved, thereby obtaining good performance ofthe peripheral devices. In addition, the peripheral devices are superposed on the array device, thereby achieving high device density.

The invention relates to a blend of fluorine rubber and silicone rubber, as well as a preparation method thereof. The composition in weight percentage of the blend of fluorine rubber and silicone rubber is as follows: 12 to 50 percent of fluorine rubber, 12 to 50 percent of silicone rubber, 2.5 to 10 percent of compatibilizer, 2.5 to 10 percent of acid-acceptor, 12 to 35 percent of reinforcing filler, 0.5 to 7 percent of constitution controller, 0.5 to 3 percent of vulcanizing agent and 0.5 to 4 percent of crosslinking additive. The blend of fluorine rubber and silicone rubber is prepared by a mechanical blending method and is vulcanized by use of peroxides. Vulcanized rubber has good mechanical properties, heat resistance, low-temperature resistance, oil resistance and low-compression permanent deformation performance, and can be used for producing and manufacturing high-performance rubber tubes, adhesive tapes, sealing elements, rubber linings and the like needed in automobile, mechanical, chemical, aerospace and other industries.

The invention discloses a composite natural polymer gel material with a cross-linking agent. The material comprises hydrogel, organogel, aerogel and bioplastics and mainly overcomes the problem of low mechanical strength of conventional natural polymer gel materials. According to the invention, a certain amount of the cross-linking agent is added into a natural polymer water-based solution or dispersion liquid, then stirring is carried out, the obtained mixture is placed in a non-solvent for physical cross-linking, and then washing is carried out so as to obtain composite natural polymer hydrogel; water in the composite natural polymer hydrogel is replaced with an organic solution so as to prepare composite natural polymer organogel; the composite natural polymer hydrogel or organogel is dried so as to prepare composite natural polymer aerogel; the composite natural polymer aerogel is subjected to hydrophobic treatment so as to obtain hydrophobic aerogel; the composite natural polymer aerogel is subjected to heat treatment so as to obtain carbon aerogel; and one or more selected from the above-mentioned gel materials are subjected to high-temperature pressing so as to prepare composite natural polymer bioplastics. The composite natural polymer gel material prepared in the invention has the advantages of excellent mechanical properties, a high specific surface area, high elongation at break, etc., and can be easily processed into molded products of a plurality of forms.

A non-aqueous electrolyte secondary battery negative electrode material is provided wherein a negative electrode active material containing a lithium ion-occluding and releasing material which has been treated with an organosilicon base surface treating agent is surface coated with a conductive coating. Using the negative electrode material, a lithium ion secondary battery having a high capacity and improved cycle performance is obtainable.

The invention relates to a lithium-ion secondary battery anode material technology, in particular to a lithium-rich manganese-based anode material Li(Li(1-2x)/3Nix-aMyMn(2-x)/3-b)O2 (M is Co, Al, Ti, Mg and Cu) and a preparation method thereof. A general formula of the lithium-rich manganese-based anode material is as follows: Li(Li(1-2x)/3Nix-aMyMn(2-x)/3-b)O2 (M is Co, Al, Ti, Mg and Cu), wherein x is more than 0 and less than or equal to 0.5, when M is Co and Al, y is more than 0 and less than 2x, a is equal to b, and b is equal to y/2; when M is Ti, y is more than 0 and less than (2-x)/3, a is equal to 0, and b is equal to y; and when M is Mg and Cu, y is more than 0 and less than x, a is equal to y, and b is equal to 0. The invention has high specific discharge capacity, excellent normal temperature and high temperature cycle performance, good safety, low raw material cost and production cost, and very high cost-performance ratio.

The invention discloses a preparation method of a textured structure of a crystalline silicon solar cell. The method includes the steps of (1) cleaning and texture preparation, (2) soaking a silicon wafer in a solution containing metal ions to enable the surface of the silicon wafer to be coated with a layer of metal nanometer particles, (3) corroding the surface of the silicon wafer to form a nanometer-grade texture, (4) cleaning to remove the metal particles, (5) carrying out microstructure amendment etching in second chemical corrosive liquid, and (6) cleaning and spin-drying. As is proved by a test, the size of the textured structure is between 100nm-500nm; the textured structure is of a nanopore shape with a large hole diameter and a small depth, or a nanometer pyramid with edge angles, or of a nanometer pit shape structure with an edge angle nanometer cone body or with an edge angle; and compared with a nanometer-micrometer composite textured structure disclosed in CN102610692A, the textured structure enables conversion efficiency of a cell piece to be improved by about 0.2%-0.5%, and an unexpected effect is achieved.

A gate wire is formed on an insulating substrate by a photolithography process using the first mask, and a gate insulating layer and a semiconductor layer are sequentially deposited. Then, an ohmic contact layer made of silicide or microcrystallized and doped amorphous silicon is formed on the semiconductor layer. Then, a triple pattern including a gate insulating layer, a semiconductor layer and an ohmic contact layer are patterned at the same time by a photolithography process using the second mask. At this time, a contact hole exposing the gate pad is formed. An ITO layer and a metal layer are deposited and patterned to form a data wire, a pixel electrode, and a redundant gate pad by a photolithography process using the third mask. The ohmic contact layer, which is not covered with the ITO layer and the metal layer, is removed. A passivation layer is deposited and patterned by a photolithography process using the fourth mask. Next, the metal layer of the pixel electrode, the redundant gate pad, and the data pad, which is not covered with the passivation layer, is removed. At this time, the semiconductor layer that is not covered with the passivation layer is removed to separate the semiconductor layer under the neighboring the data lines.

A thin film transistor array panel and a method of manufacturing the same are provided according to one or more embodiments. In an embodiment, a method includes: forming a gate line on an insulation substrate; stacking a gate insulating layer, an oxide semiconductor layer, a first barrier layer, and a first copper layer on the gate line; performing a photolithography process on the oxide semiconductor layer, the first barrier layer, and the first copper layer and forming a data line including a source electrode, a drain electrode, and an oxide semiconductor pattern; forming a passivation layer having the contact hole that exposes the drain electrode on the data line and the drain electrode; and forming a pixel electrode that is connected to the drain electrode through the contact hole on the passivation layer, wherein the forming of a data line, a drain electrode, and an oxide semiconductor pattern includes wet etching the first copper layer and then wet etching the first barrier layer and the oxide semiconductor layer.

The present invention relates to liquid-crystalline media (LC media) having negative or positive dielectric anisotropy, comprising a low-molecular-weight component and a polymerizable component. The polymerizable component comprises self-aligning, polymerizable mesogens (polymerizable self-alignment additives) which effect homeotropic (vertical) alignment of the LC media at a surface or the cell walls of a liquid-crystal display (LC display). The invention therefore also encompasses LC displays having homeotropic alignment of the LC medium without alignment layers. The invention discloses novel structures for self-alignment additives which have a certain position of the functional groups.

The invention discloses technology for producing compressed and carbonized poplar three-layer solid wood composite floor fully through utilization of a fast-growing material of poplar. A poplar sheet obtained by a special densification process is used as a surface layer; a common poplar core veneer is used as a core layer; a poplar veneer is used as a bottom layer to manufacture three-layer solid wood composite floor; each performance reaches the requirement of national standard GB/T 18103-2000 on the solid wood composite floor; the technology totally adopts the fast-growing material of the poplar as a raw material, does not add any chemical reagent in the special densification process of the poplar sheet, and does not cause any pollution to environment; after the poplar sheet is subjected to compaction treatment, the density and the hard sense of the wood are strengthened; the late high-temperature carbonization treatment solves the problem of rebounding after the poplar is compressed, changes luster of the wood, and strengthens high grade; and the technology is simple and feasible and has low manufacturing cost.

The invention discloses a high-efficiency graphene/silver phosphate composite visible light photocatalyst and a preparation method thereof, belonging to the technical field of composite materials and environmental management photocatalysis. The preparation method comprises the following steps: dissolving graphene oxide in water, and carrying out ultrasonic treatment to obtain a graphene oxide dispersed liquid; dissolving silver nitrate in deionized water, gradually and dropwisely adding into the graphene oxide dispersed liquid while stirring to obtain a mixed solution, uniformly stirring, and aging; dropwisely adding a prepared disodium hydrogen phosphate or sodium dihydrogen phosphate solution into the graphene oxide-silver nitrate mixed solution, continuing stirring, transferring into a hydrothermal reaction kettle, carrying out hydrothermal reaction, and cooling to room temperature; and washing the reaction product, and carrying out vacuum drying to obtain the visible light photocatalyst. The invention has the advantages of wide material sources and simple preparation process; and the obtained composite material has the advantages of controllable structure and regular pattern, and has high-efficiency degradation effect on organic dyes rhodamine B and methylene blue with certain concentration under the visible light irradiation.

The invention discloses composite epoxy anticorrosive paint and a preparation method thereof. The composite epoxy anticorrosive paint is composited by a component A and a component B at a ratio of 2:1, wherein the component A comprises constituents as follows: organosilicon modified epoxy resin, a pigment, filler, a plasticizer, a dispersant, a coalescing agent and a antifoaming agent; the component B comprises constituents as follows: polyphenyl ether resin powder, styrene-butadiene rubber, toluene, a plasticizer, a coupling agent, auxiliary materials and a flame retardant; and the components A and B are mixed respectively for preparation, and B is sprayed on A to form the composite epoxy anticorrosive paint. The composite epoxy anticorrosive paint is prepared by two components, has superior high-temperature resistance and abrasion resistance as well as good adhesion and low shrinkage simultaneously, has good corrosion resistance and penetration resistance to water, medium acid, alkali and other solvents and further has superior flexibility and paint application simultaneously; and the preparation method of the composite epoxy anticorrosive paint is simple and low in cost.

The invention discloses a fire-proof adhesive and application thereof. The fire-proof adhesive comprises the following components by parts: 100 parts of high-temperature bonding agent, 10-70 parts of fire retardant, 0.5-50 parts of flame retardant synergist, 5-50 parts of strength enhancer, 0.05-20.0 parts of water-proof modifying agent and 0.01-2.0 parts of curing modifying agent. By adopting the fire-proof adhesive and a preparation method of a fire-retardant EPS (Expandable Polystyrene) foam heat-insulating plate, the combustion performance and physicochemical performance of the fire-retardant EPS foam heat-insulating plate can be improved remarkably. For example, the heat-conducting coefficient can be lowered below 0.055w/m.k, the specific gravity can be lower than 150Kg/M<3>, the compressive strength is higher than 150KPa, and the heat value is less than 3MJ/kg.

The invention provides a SARS-CoV-2 vaccine using human type-5 replication-defective adenovirus as a vector. The vaccine uses E1 and E3 to be combined with replication-defective human type-5 adenovirus as the vector and HEK293 cells integrating adenovirus E1 gene as a packaging cell line, and a protective antigen gene carried is the 2019 SARS-CoV-2 S protein gene (Ad5-nCoV) which is subjected to optimization design. After the S protein gene is optimized, the expression level in transfected cells is increased significantly. The vaccine has good immunogenicity in mouse and guinea pig models, andcan induce a body to produce a strong cellular and humoral immune response in a short time. Studies on the protective effect of hACE2 transgenic mice show that after 14 days of single immunization ofAd5-nCoV, the viral load in lung tissue can be significantly reduced, and it is indicated that the vaccine has a good immunoprotective effect on the 2019 SARS-CoV-2. In addition, the vaccine is quick, simple and convenient to prepare, and can be mass-produced in a short period of time to respond to sudden outbreaks.

The invention discloses a process method for preparing an ultra-hydrophobic surface by the electrochemical method. The process adopts two processing steps: forming the micro nanometer double-structurerough surface by first electrochemical etching and then oxalic acid anodic oxidation; and preparing the ultra-hydrophobic surface by modifying the surface with fluorosilane. The method is simple andpractical, uses mature electrochemical etching and anodic oxidation technology, allows for easy mass production and avoids environmental pollution.