159 results about "Bond interface" patented technology

The invention discloses a high-temperature-stripping-resistant epoxy structural adhesive as well as a preparation method and application thereof, and belongs to the technical field of high-performance composite materials. The epoxy structural adhesive comprises bisphenol A type epoxy resin, novolac epoxy resin, polysiloxane-polyurethane modified epoxy resin, core-shell modified epoxy resin, PEEK ultrafine powder and other components, and through mutual cooperation of all the components, the problems that in a high-temperature service environment, the adhesive layer modulus of traditional adhesive is rapidly attenuated, and a bonding interface is prone to failure are solved; the epoxy structural adhesive provided by the invention has both rapid curing and heat resistance, is stable in interface bonding, has the highest modulus of 1.28 GPa at 80 DEG C, the highest peel strength of 7.8 N / mm at 80 DEG C, and a damage mode of cohesion or high-proportion mixed damage, and is especially suitable for structural bonding requirements of harsh scenes such as peripheral structures of automobile engines, high-temperature areas of electronic equipment and the like.

The invention relates to a preparation, regulation and control method of a thermoplastic elastomer encapsulating material in the technical field of new materials, which comprises the following steps: realizing an in-situ reaction process by controlling the concentration and reaction temperature of reactive functional groups in the encapsulating material according to an interface reaction rate constant and active group distribution density; if the reaction conversion rate reaches a preset value, a chemically bonded interface bonding layer is formed; monitoring the stress distribution state in the rubber coating layer by adopting a stress analysis algorithm, and when detecting that local stress concentration exceeds the yield strength of the material, dispersing a stress concentration area by adjusting the length of a flexible chain segment and the density of a rigid cross-linking point in a cross-linking network; and deformation data and a bonding strength change trend of the interface bonding layer in the temperature cycling process are obtained, if the bonding strength attenuation rate exceeds a preset threshold value, a dynamic cross-linking mechanism is activated, and the dynamic equilibrium state of interface bonding is maintained through fracture and recombination of a reversible covalent bond.

The invention relates to the technical field of semiconductor packaging, and discloses a bonding wire welding method based on bare chip interconnection, and the method comprises the steps: collecting and fusing acoustic response and optical reflection signals of a bonding interface in real time through a multi-mode in-situ sensing mechanism integrating acoustic resonance and surface plasmon resonance; dynamically calculating the thickness, the mechanical coupling deformation and the energy dissipation state of the intermetallic compound layer; and the ultrasonic power and the bonding force are subjected to closed-loop adjustment in combination with a model prediction control algorithm, so that the welding process is evolved along a preset optimal physical path all the time. The system comprises a multi-mode sensing welding head, a synchronous data acquisition module, a state resolving module and a self-adaptive control module. The transparent and intelligent welding process is realized, and the bonding consistency, reliability and yield of high-density interconnection are remarkably improved.

The invention provides a laser processing device and method, and the device comprises a laser device which is used for emitting laser; the optical system comprises a collimating lens, a shaping lens and a focusing lens, the laser is collimated and amplified by the collimating lens and then enters the shaping lens, the incident laser is converted into a flat-topped light spot from a Gaussian light spot by the shaping lens, and the flat-topped light spot is positioned on a bonding interface by moving the position of the focusing lens; the displacement table system comprises a longitudinal displacement table and a horizontal displacement table, and the longitudinal displacement table is used for driving the focus lens to move synchronously, so that the flat-topped light spot is located on a bonding interface; the horizontal displacement table is used for driving the heterogeneous bonding material to move synchronously so as to realize that the flat-topped light spot scans the whole bonding interface; the in-situ observation system is used for obtaining light spot images of the surface and the bonding interface at at least one height measurement point; and the processing control system is used for obtaining the moving distance of the focus lens according to the light spot image of the height measurement point so as to adjust the position of the focus lens. According to the method, the bonding interface can be optimized.

The invention belongs to the technical field of coatings, and discloses a corrosion-resistant high-impact-resistant electrophoretic coating and a preparation method thereof. The coating comprises a cationic water-based resin emulsion, flaky nano clay with epoxy groups grafted on the surface, a curing agent, a cosolvent and a functional additive, the core of the method is that through electric field driving in the electrophoretic deposition process, resin micelles and modified nano clay form a bionic micro-nano laminated structure in which hard inorganic sheet layers and flexible organic layers are alternately arranged on the surface of a cathode in situ, and interface bonding between the sheet layers is enhanced through chemical bonding. The bionic micro-nano laminated structure with clear periodicity and a chemical bonding interface is constructed through an in-situ co-deposition technology driven by an electric field, and the contradictions that hardness and toughness cannot be achieved at the same time and impact resistance and corrosion resistance are difficult to cooperate in the prior art are solved; the method is suitable for the high-end industrial fields such as automobile bodies, high-speed rail bogies, offshore wind power towers and the like with strict requirements on comprehensive protection performance.

A composite structure for an acoustic wave device comprising a heterostructure includes: a useful layer of piezoelectric material, having a first face and a second face, the first face being arranged at a first bonding interface on a support substrate having a coefficient of thermal expansion less than that of the useful layer, wherein the composite structure further comprises a functional layer, an entire surface of which is arranged at a second bonding interface on the second face of the useful layer and having a coefficient of thermal expansion less than that of the useful layer. Methods are used for producing such a composite structure.

The invention relates to a composite structure comprising: - a seed layer of single-crystal III-V composite material extending in a principal plane, - a support substrate of crystalline material, on which the seed layer is deposited via a bonding interface, the support substrate comprising a peripheral rim devoid of a seed layer, the peripheral rim extending around an edge of the seed layer in the principal plane, - an intermediate layer of amorphous material, disposed between the seed layer and the support substrate and present on the peripheral rim, - at least one trench present in the peripheral rim, extending, along an axis normal to the principal plane, through the intermediate layer to the support substrate, or even into the support substrate, the trench being located less than 100 micrometers from the edge in the principal plane. The invention also relates to a method for manufacturing said structure.Figure to be published with the abbreviation: -.

The invention relates to a three-dimensional heterogeneous integrated interface structure based on hybrid bonding and a stress buffer layer, and belongs to the technical field of semiconductor packaging. The interface structure sequentially comprises a copper-copper bonding layer, a polymer micro bump array, a carbon nanotube vertical interconnection bundle, a bonding interface layer, a stress self-adaptive buffer layer, a topological optimization power grid and a substrate from top to bottom, wherein an embedded coaxial interconnection structure and a graphene electromagnetic isolation wall are arranged in the topological optimization power grid. Wherein the stress self-adaptive buffer layer is formed by manufacturing polymer micro-lattices on the surface of the bonding interface layer, filling the micro-lattices with a mixture of negative thermal expansion ceramic particles and epoxy resin, and embedding shape memory alloy micro-springs. And the chip is bonded with the interface structure through the copper-copper bonding layer. The device has the advantages of being high in interconnection density, good in mechanical reliability and excellent in signal integrity, and high-performance three-dimensional heterogeneous integration can be achieved.

The invention discloses an organic medium surface topography control method for hybrid bonding, and belongs to the field of integrated circuit packaging. After a re-wiring layer and a bump pad are manufactured on the surface of a wafer and an organic dielectric layer is coated in a spin-coating manner, the pad is exposed through a chemical mechanical polishing process, then a plasma etching process is introduced, and the surface of the dielectric layer is accurately etched to be lower than the surface of the pad by utilizing the high selective etching performance of the plasma etching process on an organic medium, so that a controllable concave shape is formed. And then, aligning the two wafers subjected to the shape treatment, carrying out thermocompression bonding, and finally, carrying out thermal annealing treatment. In the annealing process, the organic dielectric layers are heated to expand and fill gaps of the bonding interfaces, sufficient bonding between the dielectric layers is achieved, meanwhile, firm electric connection is formed between the bonding pads through atomic diffusion, and hybrid bonding of heterogeneous interfaces is achieved. The method effectively solves the problem that the morphology of a heterogeneous interface is difficult to control due to the fact that an organic medium is soft and has a large polishing rate difference with metal.

A bonded substrate structure includes a first substrate; a second substrate; and a bonding region bonding the first substrate to the second substrate. The bonding region includes an aluminum oxide bonding layer directly contacting an aluminum nitride layer, and a bonding interface between the aluminum oxide bonding layer and a bonding surface of the first substrate or the second substrate.

The invention discloses a wafer room temperature bonding method and application thereof, and belongs to the technical field of semiconductor advanced packaging and three-dimensional integration. The method comprises the following steps: providing a first wafer, and sequentially preparing a metal plane layer and an oxide layer on the surface of one side of the first wafer to form a metal / oxide composite layer; selectively etching the metal / oxide composite layer to remove the oxide layer and form a metal nanowire array layer on the metal plane layer; providing a second wafer, and preparing a metal material layer on the surface of one side of the second wafer; and aligning the surface, with the metal nanowire array layer, of the first wafer with the surface, with the metal material layer, of the second wafer, and then bonding. According to the invention, the metal nanowire array is introduced into the bonding interface, so that the nanowires are subjected to plastic deformation and local surface diffusion under the action of external pressure, that is, compact and reliable metal-metal bonding can be realized in a room temperature environment, and the requirements of a low-temperature process window and high strength are both considered.

A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.

This invention discloses a method for metal hot-press bonding and its application. The method specifically includes: providing a first substrate and a second substrate, the first substrate having a first metal bonding surface and the second substrate having a second metal bonding surface; aligning the first and second substrates to bring the first and second metal bonding surfaces into contact; and performing hot-press bonding by controlling temperature and applying pressure. The hot-press bonding includes a heating and high-pressure stage, a heat-holding and low-pressure stage, and a cooling and pressure-releasing stage; the temperature of the heat-holding and low-pressure stage is the bonding temperature. This invention achieves hot-press bonding of metals in an air environment through coordinated temperature and pressure control, resulting in a well-bonded interface that is free of oxidation, dense, and pore-free.

The invention provides a wafer bonding method, and relates to the technical field of semiconductors. The first wafer and the second wafer are provided firstly, then the first wafer and the second wafer are aligned, the first wafer and the second wafer are bonded through the bonding technology, and the preliminary bonding structure is obtained. And finally, sequentially carrying out annealing treatment on the preliminary bonding structure for multiple times through an annealing process to obtain a final bonding structure. In the multiple annealing treatment processes, the annealing temperatures are different, and the heat preservation time of annealing is different. According to the technical scheme, the initial bonding structure is subjected to annealing treatment for multiple times, gas in bubbles of a bonding interface is promoted to diffuse and escape in stages, the density and size of the bubbles are gradually reduced, the bubbles are efficiently eliminated, damage to a wafer caused by single high temperature can be avoided, the method is suitable for the bonding process of multiple materials, and the production efficiency is improved. The method has the advantages of high process compatibility, remarkable yield improvement and the like.

A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.

The invention relates to a ceramic substrate multilayer packaging structure and method based on a gold bump and a gold-tin spacing structure. The multi-layer packaging structure comprises a plurality of layers of gold bump assembly subunits which are sequentially arranged from top to bottom; the adjacent gold bump assembly subunits are connected through gold-tin welding; each gold bump assembly subunit comprises a first aluminum oxide ceramic substrate and a second aluminum oxide ceramic substrate which are connected through gold bumps. According to the method, the gold bumps are firstly formed to assemble the subunits, and then the subunits are subjected to gold-tin welding, so that no ultrasonic effect exists in subsequent assembly, multiple impact of ultrasonic energy on the bonding interface is fundamentally avoided, the damage of ultrasonic to the bonding interface is reduced, and the connection reliability is guaranteed.

The present application relates to the technical field of temperature control, and discloses a temperature control correction method, system, device and storage medium, the method comprising: acquiring a real-time environment temperature and an interface target temperature; determining a first control reference value corresponding to the real-time environment temperature based on the real-time environment temperature, the interface target temperature and a preset correction coefficient; correcting the first control reference value based on a preset compensation value to obtain a second control reference value; and determining a target control temperature of a temperature control module according to the second control reference value and a preset overshoot compensation function. According to the preset temperature correlation model, the target control temperature required by the temperature control module is calculated in combination with the environment temperature and the interface target temperature, so as to drive the heating base to adjust the heating power in real time, thereby indirectly achieving the control of the interface target temperature of the bonding interface under the condition that the bonding interface temperature cannot be directly monitored.

The invention discloses a large-size packaging substrate stack-up structure using a copper bonding method and a manufacturing method, the substrate stack-up structure comprises a first core plate, the first core plate is provided with a first conduction line, and the top surface of the first core plate is provided with a plurality of upper first copper columns; the second core layer is provided with a second conduction circuit, and a plurality of second copper columns are arranged on the surface of the bottom of the second core layer; wherein the first copper columns and the second copper columns are in one-to-one correspondence and are connected through a copper bonding method; the second core layer is a high-modulus material core layer of which the modulus is greater than or equal to 50GPa; through the rigid gradient combination of the high-rigidity second core layer (such as a glass core) and the first core plate (BT resin), a stress counteracting structure is formed on a copper bonding interface at the same time. And when the filled resin is cooled and shrunk, the high-rigidity core layer provides a reverse constraining force to directly inhibit the deformation of the panel, so that the effect of preventing the panel from warping is achieved.

The utility model discloses a built-in four-PAD multifunctional pedestal structure, comprising a pedestal main body, the middle of the pedestal main body is provided with a groove used for carrying a wafer, the bottom of the groove is provided with four boss-shaped dispensing PAD, and the four corners of the bottom of the wafer are respectively adhered to the four dispensing PAD. According to the utility model, the number of the bottom glue points in the cavity of the base is increased to four from two in the prior art, the bonding interface structure of the wafer and the base is obviously optimized, the four bottom glue points are symmetrically distributed, the bonding area is effectively enlarged, the stress distribution of the glue layer is more uniform, the bonding strength is improved, and the bonding strength is improved in a harsh vibration environment. The structure can greatly reduce the risk of fatigue cracking of the adhesive layer, and ensures that the wafer and the base are always kept in good contact.

A silicon photonic device includes a substrate formed from a silicon-containing material and patterned to comprise a first waveguide and a second waveguide defining a first trench extending between the first waveguide and the second waveguide. The first waveguide and second waveguide have upper surfaces exposed for bonding to an epitaxially grown layer. The first trench being exposed to the epitaxially grown layer. A support structure is formed within the first trench and extends upward to an upper surface at a height of the upper surfaces of the first waveguide and second waveguide. The support structure is optically non-functional.

The invention discloses a method for rolling a large-thickness steel / aluminum composite material by rapidly heating a core part, and belongs to the technical field of metal layered composite material preparation. Firstly, a thick steel plate and a thin aluminum plate are subjected to hot rolling compounding, then a thick aluminum plate welded with a supporting aluminum material is compounded with a blank obtained in the previous step, and the large-thickness steel / aluminum composite material is obtained after heating and rolling forming through a pinch roll. According to the method for rapidly heating the core part, the interface deformation in the rolling process can be effectively increased, the energy consumption is reduced, the influence of waste heat on the component matrix performance and the bonding interface performance is avoided, and then high-quality preparation of the large-thickness steel / aluminum composite material is achieved.

The application provides a hybrid bonding structure, a three-dimensional packaging structure and a preparation method thereof. The preparation method of the hybrid bonding structure comprises the following steps: providing an initial hybrid bonding structure, wherein the hybrid bonding structure comprises a medium layer, a bonding medium layer, a diffusion barrier layer, a bonding metal layer and a regulation layer; performing a first grinding process to remove the diffusion barrier layer and the regulation layer, and forming a convex part protruding from the top surface of the bonding medium layer; and performing a second grinding process to remove the convex part of the bonding metal layer, and forming a first recessed part on the top surface of the bonding metal layer, which is lower than the top surface of the bonding medium layer. The hybrid bonding structure is a product prepared by the above method. The three-dimensional packaging structure comprises the hybrid bonding structure prepared by the above method. By adding the regulation layer, the convex part is formed when the diffusion barrier layer and the regulation layer are removed in the first grinding process, and the second grinding process is performed on the convex part to effectively control the depth of the first recessed part on the bonding metal layer. Therefore, the metal bonding interface cavity during hybrid bonding is reduced, and the bonding strength is improved.

The present specification discloses a composite material and a use thereof. The present specification discloses a composite material including a plastic plate and a metal plate bonded to each other while exhibiting excellent bonding force, in which an internal space may be formed at a bonding interface between the plastic plate and the metal plate, and in which excellent airtightness and excellent bonding force are secured. The present specification also discloses a composite material exhibiting excellent binding force and excellent airtightness while having a large area. The invention further discloses application of the composite material.

A MEMS device and a manufacturing method thereof, the manufacturing method comprising: providing a first substrate, the first substrate being formed with a cavity and a lead layer, the lead layer comprising a strip-shaped lead and a ring-shaped lead arranged around the cavity, the ring-shaped lead having a broken area, the strip-shaped lead passing through the broken area, and the strip-shaped lead and the ring-shaped lead having a gap at the broken area; forming a first dielectric layer covering the lead layer, wherein the first dielectric layer is formed with a recessed area corresponding to the gap; forming a metal filling layer in the recessed area; forming a metal bonding layer arranged around the cavity on the first dielectric layer; and providing a second substrate, the bonding surface of the second substrate being bonded with the metal bonding layer, the metal filling layer being capable of deforming and filling the recessed area during the bonding process. The application can effectively eliminate the recessed defects of the metal bonding layer, reduce the process difficulty of the bonding, ensure the close fit of the bonding interface, prevent the generation of void defects, and improve the sealing reliability.

In wafer-to-wafer bonding, a first die is bonded to a second die at a bonding interface. Various configurations of capacitors are placed along an inner portion of an edge seal of the bonded dies to detect a discontinuity in the bonding interface. These configurations include interdigitated capacitors, which can be horizontally or vertically oriented, parallel-digitated capacitors, and pillars forming a parameter around the dies with conductive portions offset from the pillar and extending inside the dies. Other configurations can be used.

A method for hydrophilic direct bonding of a first substrate onto a second substrate is provided, including: providing the first substrate having a first main surface and the second substrate having a second main surface; bringing the first and the second substrates into contact with one another, respectively, via the first and the second main surfaces, to form a bonding interface between two bonding surfaces; applying a heat treatment to close the bonding interface; and prior to the step of bringing the first and the second substrates into contact, forming, on the first main surface and / or on the second main surface, a bonding layer made of an amorphous semiconductor material having doping elements and a thickness of less than or equal to 50 nm, a face of the bonding layer constituting one of the two bonding surfaces, an oxide layer being less than 20 nm from the bonding interface.

Bonded die structures and methods of fabrication thereof that provide reduced defects and higher reliability. A laser grooving process may be used to “precut” bonded device structures prior to a final dicing process. The laser grooving process may form relatively deep grooves in the bonded device structure that may extend beyond the bonding interface between a first device structure and a second device structure. A final dicing process along the precut grooves may be used to separate individual bonded die structures. Because the dicing occurs along the deep precut grooves that extend through the bonding interface between the stacked device structures, the dicing blade may not cut through or come into contact with the bonding interface. This may result in in reduced mechanical stress, which may decrease the occurrence of delamination defects between the device structures and thereby provide improved reliability and increased yields.

The application relates to a semiconductor structure and a bonding method thereof, and relates to the technical field of semiconductors. The application first provides two substrates, the substrate comprises a groove and a conductive layer in the groove, the height of the conductive layer is smaller than the height of the groove in the direction perpendicular to the substrate, and a composite material layer is arranged on the conductive layer. The composite material is synthesized in situ in the direction of the conductive layer in the groove, the reaction condition can be controlled, the amount of the composite material generated is controlled, and the height of the conductive layer in the traditional process is not specially adjusted. The porous structure of the composite material can accommodate the thermal melting diffusion of the conductive layer in the bonding process, the metal penetration of the conductive layer into the substrate is prevented, and the conductive continuity is ensured through skeleton filling. The surface of the composite material layer is rich in functional groups, so that the bonding interface has the synergistic effect of dielectric material bonding and composite material bonding, the bonding strength is higher than that of the prior art, and the semiconductor structure formed by adopting the bonding method of the application has higher bonding strength and better reliability.