235 results about "Bond interface" patented technology

The invention discloses a helium detection device and method for the airtightness of a bonding interface and a bonding microcavity, and belongs to the field of the airtightness of MEMS devices. The device comprises a sample holder, a mass spectrometer, a molecular pump, a mechanical pump and other components, helium is used as detection gas, and the helium is leaked only through a bonding interface through a customized and processed test sample and sample holder structure, so that the interference of other leaks in a non-bonding area on a test result is avoided. The testing method comprises the steps of sample introduction, vacuum pumping, helium filling, signal detection, dynamic and steady state testing and the like, the helium leak rate is monitored in real time by combining with a helium mass spectrometer, and the minimum leak detection rate is that high-sensitivity air tightness detection is ensured. According to the method, the airtightness of the bonding interface can be independently evaluated, and a reliable basis is provided for development of a novel bonding process. The method is suitable for air tightness detection and evaluation of the bonding process in MEMS device processing and manufacturing.

Provided are a solder alloy, a solder ball, a preformed solder, a solder joint, and a circuit, which are excellent in wettability and shear strength, suitable in failure mode, capable of suppressing the growth of an intermetallic compound at a bonding interface even after multiple reflow soldering, excellent in drop impact resistance, and suitable in the shape of a bump. The solder alloy has an alloy composition comprising, in mass%, 0.10 to 3.00% of Ag, 0.80 to 6.00% of Cu, 0.08 to 0.60% of Ni, 0.0010 to 0.0150% of Ge, and the balance of Sn. It is preferable that the alloy composition further contains 0.1% or less of at least one of Bi, Sb, In, Zn, Ga, Mn, Cr, Co, Si, Ti, and rare earths in total.

The invention discloses a high-temperature-stripping-resistant epoxy structural adhesive as well as a preparation method and application thereof, and belongs to the technical field of high-performance composite materials. The epoxy structural adhesive comprises bisphenol A type epoxy resin, novolac epoxy resin, polysiloxane-polyurethane modified epoxy resin, core-shell modified epoxy resin, PEEK ultrafine powder and other components, and through mutual cooperation of all the components, the problems that in a high-temperature service environment, the adhesive layer modulus of traditional adhesive is rapidly attenuated, and a bonding interface is prone to failure are solved; the epoxy structural adhesive provided by the invention has both rapid curing and heat resistance, is stable in interface bonding, has the highest modulus of 1.28 GPa at 80 DEG C, the highest peel strength of 7.8 N / mm at 80 DEG C, and a damage mode of cohesion or high-proportion mixed damage, and is especially suitable for structural bonding requirements of harsh scenes such as peripheral structures of automobile engines, high-temperature areas of electronic equipment and the like.

The invention discloses a bus duct insulation performance evaluation system, and the system comprises a microscopic collection module which is used for collecting a joint interface microscopic image through a scanning electron microscope, and obtaining material distribution and defect parameters; the finite element analysis module is used for performing finite element analysis by utilizing the material distribution and defect parameters and calculating an electric field intensity gradient value; the electric field distortion identification module is used for identifying an electric field distortion area according to the electric field intensity gradient value and determining a partial discharge position coordinate; the dielectric parameter measurement module is used for measuring a dielectric constant and a loss factor at the partial discharge position coordinates to generate a change curve; the aging index calculation module is used for extracting peak value and slope characteristics from the change curve and calculating a material aging index; the correlation model building module is used for building a correlation model of the material aging index and the insulation strength and generating a prediction coefficient; and the evaluation optimization module is used for correcting the insulation performance evaluation value by using the prediction coefficient and outputting an optimization evaluation report.

The invention relates to a preparation, regulation and control method of a thermoplastic elastomer encapsulating material in the technical field of new materials, which comprises the following steps: realizing an in-situ reaction process by controlling the concentration and reaction temperature of reactive functional groups in the encapsulating material according to an interface reaction rate constant and active group distribution density; if the reaction conversion rate reaches a preset value, a chemically bonded interface bonding layer is formed; monitoring the stress distribution state in the rubber coating layer by adopting a stress analysis algorithm, and when detecting that local stress concentration exceeds the yield strength of the material, dispersing a stress concentration area by adjusting the length of a flexible chain segment and the density of a rigid cross-linking point in a cross-linking network; and deformation data and a bonding strength change trend of the interface bonding layer in the temperature cycling process are obtained, if the bonding strength attenuation rate exceeds a preset threshold value, a dynamic cross-linking mechanism is activated, and the dynamic equilibrium state of interface bonding is maintained through fracture and recombination of a reversible covalent bond.

The invention discloses an anti-oxidation coating and a manufacturing method thereof, and belongs to the field of coatings. The anti-oxidation coating is arranged on the surface of a zirconium alloy matrix, the anti-oxidation coating is a pure Cr coating, the hardness of the anti-oxidation coating is in gradient distribution in the thickness direction, the hardness of a surface layer is larger than that of a bottom layer, and the hardness gt of the bottom layer of the anti-oxidation coating is larger than that of gt; the hardness gt at the 1 / 2 thickness is 4GPa; the hardness of the surface layer is gt; and 6 GPa. Good bonding strength is achieved between the anti-oxidation coating and the zirconium alloy matrix, cracks are not prone to being generated on a bonding interface when the anti-oxidation coating serves in a long-term high-temperature and high-pressure corrosion environment, the service life of the zirconium alloy matrix can be effectively prolonged, and the reliability of the zirconium alloy matrix can be effectively improved.

The invention relates to the technical field of semiconductor packaging, and discloses a bonding wire welding method based on bare chip interconnection, and the method comprises the steps: collecting and fusing acoustic response and optical reflection signals of a bonding interface in real time through a multi-mode in-situ sensing mechanism integrating acoustic resonance and surface plasmon resonance; dynamically calculating the thickness, the mechanical coupling deformation and the energy dissipation state of the intermetallic compound layer; and the ultrasonic power and the bonding force are subjected to closed-loop adjustment in combination with a model prediction control algorithm, so that the welding process is evolved along a preset optimal physical path all the time. The system comprises a multi-mode sensing welding head, a synchronous data acquisition module, a state resolving module and a self-adaptive control module. The transparent and intelligent welding process is realized, and the bonding consistency, reliability and yield of high-density interconnection are remarkably improved.

The invention provides a friction solid-phase additive manufacturing method for improving the bonding strength of dissimilar alloys through interlayer interface texturing. The method comprises the following steps that an aluminum alloy or magnesium alloy plate serves as a base body; depositing a first metal layer on the polished to-be-added area by adopting a friction solid-phase additive process; processing a preset micron-sized three-dimensional texture on the surface of the first metal layer by adopting a laser scanning system so as to form a textured interface, and meanwhile, removing new oxides on the surface of the first metal layer; on the textured interface, a second metal layer which is made of a material different from that of the first metal layer is deposited again through the friction solid-phase additive process, so that a bonding interface which is characterized by micromechanical interlocking is formed between the first metal layer and the second metal layer; layer-by-layer additive manufacturing of a stacked dissimilar alloy having a plurality of dissimilar metal bonding interfaces. According to the method, the interlayer bonding mode of the dissimilar alloy is changed, and the problems of layering and cracking of dissimilar alloy fusion welding additive manufacturing components are effectively solved.

The invention discloses an adhesive testing system, method and device, and relates to the technical field of adhesion testing, and the method comprises the following steps: obtaining a substrate surface image after an adhesive is stripped; a flexible isolation plate is arranged between the adhesive and the base material, and the flexible isolation plate is a hollowed-out isolation plate so that the adhesive and the base material can be bonded in a point-shaped mode. Performing color analysis on the surface image of the base material to determine a damage mode corresponding to each bonding point; the destruction mode comprises an adhesive body destruction mode, a base material body destruction mode and a bonding interface separation mode. And determining a test result of the adhesive based on the proportion of the bonding interface separation mode in the damage mode corresponding to all the bonding points. By arranging the hollowed-out isolation plate between the adhesive and the base material, even if the base material is an elastic base material with low modulus, stripping of the adhesive and the base material can be smoothly achieved. Based on the visual identification part, automatic evaluation of the adhesion effect of the adhesive can be realized, so that the adhesion effect of the adhesive can be evaluated more accurately.

The invention provides a laser processing device and method, and the device comprises a laser device which is used for emitting laser; the optical system comprises a collimating lens, a shaping lens and a focusing lens, the laser is collimated and amplified by the collimating lens and then enters the shaping lens, the incident laser is converted into a flat-topped light spot from a Gaussian light spot by the shaping lens, and the flat-topped light spot is positioned on a bonding interface by moving the position of the focusing lens; the displacement table system comprises a longitudinal displacement table and a horizontal displacement table, and the longitudinal displacement table is used for driving the focus lens to move synchronously, so that the flat-topped light spot is located on a bonding interface; the horizontal displacement table is used for driving the heterogeneous bonding material to move synchronously so as to realize that the flat-topped light spot scans the whole bonding interface; the in-situ observation system is used for obtaining light spot images of the surface and the bonding interface at at least one height measurement point; and the processing control system is used for obtaining the moving distance of the focus lens according to the light spot image of the height measurement point so as to adjust the position of the focus lens. According to the method, the bonding interface can be optimized.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad may be disposed at a bonding surface of at least one of the microelectronic substrates, where the contact pad is positioned offset relative to a TSV in the substrate and electrically coupled to the TSV.

The invention discloses a method for preparing a diamond grinding wheel through a binding agent doped with a rare earth material, and particularly relates to the technical field of diamond grinding wheels, and the method comprises the steps of S1, diamond abrasive particle pretreatment, S2, composite binding agent preparation, S3, gradient charging and S4, spark plasma sintering. According to the method, abrasive particle concentration and density gradient distribution is formed on a grinding wheel working layer through a gradient charging process, and a reinforced reaction layer is formed on a diamond-binding agent interface in combination with a rare earth additive, so that remarkable improvement of the grinding efficiency, great reduction of the abrasive particle falling-off rate and optimization of comprehensive mechanical properties are synergistically realized; and meanwhile, the impact resistance and the heat dissipation capacity are enhanced through the edge strengthening area and the multi-stage pore structure, and the application scene in the high-hardness material machining field is effectively expanded.

The semiconductor structure and the manufacturing method thereof provided by the present disclosure can effectively control the depth / degree of the bonding interface recess in the CMP process by setting the bonding pad of the same size on the different size pads and then performing the CMP process, so as to avoid the electrical failure phenomenon as much as possible.

The invention belongs to the technical field of coatings, and discloses a corrosion-resistant high-impact-resistant electrophoretic coating and a preparation method thereof. The coating comprises a cationic water-based resin emulsion, flaky nano clay with epoxy groups grafted on the surface, a curing agent, a cosolvent and a functional additive, the core of the method is that through electric field driving in the electrophoretic deposition process, resin micelles and modified nano clay form a bionic micro-nano laminated structure in which hard inorganic sheet layers and flexible organic layers are alternately arranged on the surface of a cathode in situ, and interface bonding between the sheet layers is enhanced through chemical bonding. The bionic micro-nano laminated structure with clear periodicity and a chemical bonding interface is constructed through an in-situ co-deposition technology driven by an electric field, and the contradictions that hardness and toughness cannot be achieved at the same time and impact resistance and corrosion resistance are difficult to cooperate in the prior art are solved; the method is suitable for the high-end industrial fields such as automobile bodies, high-speed rail bogies, offshore wind power towers and the like with strict requirements on comprehensive protection performance.

An element, a bonding structure including the element, and a method of forming the same are disclosed. The bonding structure may include a first element having a first non-conductive field region and a first conductive feature. A surface of the first non-conductive field region and a surface of the first conductive feature at least partially define a bonding surface of the first element. The first conductive feature includes a first portion and a second portion over the first portion and at least partially defining a surface of the first conductive feature. The first portion includes aluminum. The first conductive feature has continuous sidewalls along the first portion and the second portion. The second portion includes a different metal composition than the first portion or includes fluorine at a surface of the first conductive feature. The bonding structure may include a second element having a second non-conductive field region and a second conductive feature. A surface of the second non-conductive field region is directly bonded to the first non-conductive field region along a bonding interface without an intermediate adhesive; and the surface of the second conductive feature is directly bonded to the second conductive feature along the bonding interface without an intermediate adhesive.

The invention discloses a part and a method for testing the water permeability effect of a bonding interface position of glass and a water-blocking material. The component for testing the water permeability effect of the bonding interface position of the glass and the water-blocking material comprises a testing glass plate and a water-blocking material piece, the testing glass plate is provided with at least one testing through hole penetrating through the two surfaces of the testing glass plate, and the testing through hole is filled with the water-blocking material piece and sealed by the water-blocking material piece. According to the part for testing the water permeability effect at the bonding interface position of the glass and the water-blocking material, the water-blocking performance test sample comprises the test glass plate and the water-blocking material piece such as butyl rubber elements, the practical environment of the water-blocking material piece such as butyl rubber can be truly simulated, the manufacturing process conforms to the assembly manufacturing specification, and the production efficiency is improved. And the tested test piece sample can be prepared in batches, can be directly used for various water vapor-related weather resistance tests, can feed back the water permeability change of the water-blocking material piece in a staged and quantitative manner, and can refine and characterize the performance difference of the water-blocking material.

A composite structure for an acoustic wave device comprising a heterostructure includes: a useful layer of piezoelectric material, having a first face and a second face, the first face being arranged at a first bonding interface on a support substrate having a coefficient of thermal expansion less than that of the useful layer, wherein the composite structure further comprises a functional layer, an entire surface of which is arranged at a second bonding interface on the second face of the useful layer and having a coefficient of thermal expansion less than that of the useful layer. Methods are used for producing such a composite structure.

The application discloses a method for predicting damage evolution and performance degradation of a bonding interface under random load, and belongs to the field of bonding interface damage prediction under random load. First, random load signals in the cutting process of a bonding component are collected, and the random load signals are subjected to detrending treatment and feature segment signals are extracted. Second, the pre-simulation results of the bonding component are processed to obtain the distribution range of the stress amplitude and frequency of the bonding interface. Third, vibration load experiments are conducted on standard butt bonding samples and standard shear bonding samples to obtain S-N fatigue life curves in the normal stress direction and the shear stress direction, and the cohesive force parameters of the bonding interface after degradation under different damage degrees. Finally, a simulation model for predicting the damage evolution and performance degradation of the bonding interface of the bonding component is constructed to predict the damage of the bonding interface. The application can effectively predict the damage evolution and residual mechanical performance of the bonding interface after high-frequency random vibration load, improve the calculation efficiency, and has guiding significance.

The invention relates to a composite structure comprising: - a seed layer of single-crystal III-V composite material extending in a principal plane, - a support substrate of crystalline material, on which the seed layer is deposited via a bonding interface, the support substrate comprising a peripheral rim devoid of a seed layer, the peripheral rim extending around an edge of the seed layer in the principal plane, - an intermediate layer of amorphous material, disposed between the seed layer and the support substrate and present on the peripheral rim, - at least one trench present in the peripheral rim, extending, along an axis normal to the principal plane, through the intermediate layer to the support substrate, or even into the support substrate, the trench being located less than 100 micrometers from the edge in the principal plane. The invention also relates to a method for manufacturing said structure.Figure to be published with the abbreviation: -.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad having a larger diameter or surface area (e.g., oversized for the application) may be used when a contact pad is positioned over a TSV in one or both substrates.

The invention relates to a three-dimensional heterogeneous integrated interface structure based on hybrid bonding and a stress buffer layer, and belongs to the technical field of semiconductor packaging. The interface structure sequentially comprises a copper-copper bonding layer, a polymer micro bump array, a carbon nanotube vertical interconnection bundle, a bonding interface layer, a stress self-adaptive buffer layer, a topological optimization power grid and a substrate from top to bottom, wherein an embedded coaxial interconnection structure and a graphene electromagnetic isolation wall are arranged in the topological optimization power grid. Wherein the stress self-adaptive buffer layer is formed by manufacturing polymer micro-lattices on the surface of the bonding interface layer, filling the micro-lattices with a mixture of negative thermal expansion ceramic particles and epoxy resin, and embedding shape memory alloy micro-springs. And the chip is bonded with the interface structure through the copper-copper bonding layer. The device has the advantages of being high in interconnection density, good in mechanical reliability and excellent in signal integrity, and high-performance three-dimensional heterogeneous integration can be achieved.

The invention discloses an organic medium surface topography control method for hybrid bonding, and belongs to the field of integrated circuit packaging. After a re-wiring layer and a bump pad are manufactured on the surface of a wafer and an organic dielectric layer is coated in a spin-coating manner, the pad is exposed through a chemical mechanical polishing process, then a plasma etching process is introduced, and the surface of the dielectric layer is accurately etched to be lower than the surface of the pad by utilizing the high selective etching performance of the plasma etching process on an organic medium, so that a controllable concave shape is formed. And then, aligning the two wafers subjected to the shape treatment, carrying out thermocompression bonding, and finally, carrying out thermal annealing treatment. In the annealing process, the organic dielectric layers are heated to expand and fill gaps of the bonding interfaces, sufficient bonding between the dielectric layers is achieved, meanwhile, firm electric connection is formed between the bonding pads through atomic diffusion, and hybrid bonding of heterogeneous interfaces is achieved. The method effectively solves the problem that the morphology of a heterogeneous interface is difficult to control due to the fact that an organic medium is soft and has a large polishing rate difference with metal.

A bonded substrate structure includes a first substrate; a second substrate; and a bonding region bonding the first substrate to the second substrate. The bonding region includes an aluminum oxide bonding layer directly contacting an aluminum nitride layer, and a bonding interface between the aluminum oxide bonding layer and a bonding surface of the first substrate or the second substrate.

The invention discloses a wafer room temperature bonding method and application thereof, and belongs to the technical field of semiconductor advanced packaging and three-dimensional integration. The method comprises the following steps: providing a first wafer, and sequentially preparing a metal plane layer and an oxide layer on the surface of one side of the first wafer to form a metal / oxide composite layer; selectively etching the metal / oxide composite layer to remove the oxide layer and form a metal nanowire array layer on the metal plane layer; providing a second wafer, and preparing a metal material layer on the surface of one side of the second wafer; and aligning the surface, with the metal nanowire array layer, of the first wafer with the surface, with the metal material layer, of the second wafer, and then bonding. According to the invention, the metal nanowire array is introduced into the bonding interface, so that the nanowires are subjected to plastic deformation and local surface diffusion under the action of external pressure, that is, compact and reliable metal-metal bonding can be realized in a room temperature environment, and the requirements of a low-temperature process window and high strength are both considered.

A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.

This invention discloses a method for metal hot-press bonding and its application. The method specifically includes: providing a first substrate and a second substrate, the first substrate having a first metal bonding surface and the second substrate having a second metal bonding surface; aligning the first and second substrates to bring the first and second metal bonding surfaces into contact; and performing hot-press bonding by controlling temperature and applying pressure. The hot-press bonding includes a heating and high-pressure stage, a heat-holding and low-pressure stage, and a cooling and pressure-releasing stage; the temperature of the heat-holding and low-pressure stage is the bonding temperature. This invention achieves hot-press bonding of metals in an air environment through coordinated temperature and pressure control, resulting in a well-bonded interface that is free of oxidation, dense, and pore-free.

The application provides a method for evaluating the bonding performance of a carbon fiber composite material reinforced steel structure interface, comprising: calculating the steel bonding interface shear stress tau and the steel matrix slip s; calculating the maximum shear stress tau of the bonding interface max ; calculating the interface fracture energy G f ; calculating the initial slip s1; calculating the maximum slip s f ; and drawing a CFRP-steel interface bonding performance evaluation model prediction curve. The application provides a method for evaluating the bonding performance of a carbon fiber composite material reinforced steel structure interface, comprehensively considers different surface treatment forms that may be involved in actual engineering, has a wider application range than a traditional single surface treatment method, obtains a shear stress-slip hyperbolic curve under different surface treatment conditions based on parameter fitting and a simplification method, is more accurate and reliable than a traditional method, and does not need a high-performance computer, is convenient and simple to calculate, is fast, and has low cost.

The invention provides a wafer bonding method, and relates to the technical field of semiconductors. The first wafer and the second wafer are provided firstly, then the first wafer and the second wafer are aligned, the first wafer and the second wafer are bonded through the bonding technology, and the preliminary bonding structure is obtained. And finally, sequentially carrying out annealing treatment on the preliminary bonding structure for multiple times through an annealing process to obtain a final bonding structure. In the multiple annealing treatment processes, the annealing temperatures are different, and the heat preservation time of annealing is different. According to the technical scheme, the initial bonding structure is subjected to annealing treatment for multiple times, gas in bubbles of a bonding interface is promoted to diffuse and escape in stages, the density and size of the bubbles are gradually reduced, the bubbles are efficiently eliminated, damage to a wafer caused by single high temperature can be avoided, the method is suitable for the bonding process of multiple materials, and the production efficiency is improved. The method has the advantages of high process compatibility, remarkable yield improvement and the like.

A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.