433 results about "Bond interface" patented technology

Integrated circuit (IC) structures, electronic modules, and methods of fabrication are described in which direct bonded interfaces are removed at corners or edges to counteract the potential for non-bonding or delamination. This can be accomplished during singulation, in which a side recess is formed through an entire thickness of an electronic component and into a direct bonded die, followed by final singulation of the IC structure.

The invention discloses a ballastless track concrete bonding interface mechanical state testing method, belongs to the technical field of track traffic engineering, and realizes a multi-field coupling loading test on a ballastless track interlayer test piece by constructing an interlayer mechanical testing device comprising a servo loading mechanism, a DIC technology and finite element mechanical analysis. A high-speed camera is adopted to synchronously record the whole process of interlayer interface damage, an interface stress distribution cloud picture is obtained in combination with a distributed strain patch, and a load-displacement curve and interlayer slippage data are synchronously collected. A refined finite element model containing a cohesion unit is established based on measured data, and iterative fitting of a simulation result and test data is achieved by dynamically adjusting interface damage parameters. According to the method, the limitation of a traditional single-point stress test is broken through, space-time multi-scale analysis of interlayer mechanical behaviors is achieved, the technical problems that an interlayer interface failure mechanism is not clear and simulation model parameters are difficult to calibrate are solved, and a novel test is provided for durability evaluation of a ballastless track structure.

The invention discloses a preparation method of a composite pipe for vibration and noise reduction, and relates to the technical field of metal material preparation, in order to solve the problems that an existing prepared composite pipe is poor in pressure resistance and vibration reduction and sound absorption capacities, the preparation method comprises the steps that an inner layer metal pipe, an outer layer metal pipe and foaming powder are integrally extruded and formed, and a pipe blank composite pipe blank is obtained; the pipe blank composite pipe blank is heated, rolling forming is conducted on the pipe blank composite pipe blank, the temperature of a contact interface between the structures of the pipe blank composite pipe blank is increased to a preset temperature, a metallurgical bonding target bonding interface is formed on the contact interface, and a target composite pipe blank is obtained; and the target composite pipe blank is placed in a heating furnace, the middle layer of the target composite pipe blank is foamed to form a foam metal layer, and the foam metal sandwich composite pipe is obtained. The preparation method provided by the invention is used for improving the compressive strength and the vibration reduction and sound absorption performance of the foam metal sandwich composite pipe.

The invention discloses a rolling method of a corrugated roller and a rolling system of the corrugated roller, relates to the field of bimetal laminated plate preparation, and aims to solve the problem that a metal laminated plate is easy to crack in the machining process. The rolling method comprises the steps that a plate blank is fed into two corrugated rollers arranged at an interval to be rolled, so that a first double-metal laminated plate is formed, and the upper surface and the lower surface of the first double-metal laminated plate and the bonding interface of the plate blank are all latticed wavy surfaces; the first double-metal laminated plate is fed into two flat rollers arranged at an interval to be rolled, so that a second double-metal laminated plate is formed, the upper surface and the lower surface of the second double-metal laminated plate are both planes, and the bonding interface is a latticed wavy surface; and carrying out annealing treatment on the second bimetal laminated plate. The corrugated structure on the corrugated roller is reflected to the bonding interface between the base plate and the compound plate, and then secondary rolling is performed through the flat roller, so that the bonding strength of the second double-metal laminated plate is improved, and the forming quality and the yield of the metal laminated plate are guaranteed.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad may be disposed at a bonding surface of at least one of the microelectronic substrates, where the contact pad is positioned offset relative to a TSV in the substrate and electrically coupled to the TSV.

A copper alloy bonded body composed of a plurality of members made of an age-hardenable copper alloy, the members diffusion-bonded to one another. The copper alloy bonded body has undergone solution annealing and an aging treatment, the content of beryllium in the age-hardenable copper alloy is 0.7% by weight or less, and (i) a bonding interface between the members has disappeared and / or (ii) a bonding interface between the members remains, and an oxide film at the bonding interface has a thickness of 0 nm or more and 5.0 nm or less.

The invention discloses a helium detection device and method for the airtightness of a bonding interface and a bonding microcavity, and belongs to the field of the airtightness of MEMS devices. The device comprises a sample holder, a mass spectrometer, a molecular pump, a mechanical pump and other components, helium is used as detection gas, and the helium is leaked only through a bonding interface through a customized and processed test sample and sample holder structure, so that the interference of other leaks in a non-bonding area on a test result is avoided. The testing method comprises the steps of sample introduction, vacuum pumping, helium filling, signal detection, dynamic and steady state testing and the like, the helium leak rate is monitored in real time by combining with a helium mass spectrometer, and the minimum leak detection rate is that high-sensitivity air tightness detection is ensured. According to the method, the airtightness of the bonding interface can be independently evaluated, and a reliable basis is provided for development of a novel bonding process. The method is suitable for air tightness detection and evaluation of the bonding process in MEMS device processing and manufacturing.

The invention discloses an alloy bonding process parameter optimization method and system, and relates to the technical field of data processing, and the method comprises the steps: presetting a target microstructure state, and constructing an evaluation index system; actual microstructure data of a bonding interface in the alloy bonding process are obtained, and key evolution characteristics are marked to determine the thickness of a diffusion layer and grain size distribution; by comparing the actual microstructure data with the target microstructure state, a relation model of process parameters and microstructures is established, and first prediction is completed; analyzing the dynamic characteristics of the diffusion layer through the result of the first prediction, and completing second prediction in combination with a thermodynamic-diffusion threshold value; and deducing an optimal process parameter combination through a second prediction result to realize a target microstructure state. According to the method, the problems of target fuzziness, insufficient model precision and the like are effectively solved, the bonding quality and stability are remarkably improved, the rejection rate and the cost are reduced, and an innovative solution is provided for high-performance material processing.

Provided are a solder alloy, a solder ball, a preformed solder, a solder joint, and a circuit, which are excellent in wettability and shear strength, suitable in failure mode, capable of suppressing the growth of an intermetallic compound at a bonding interface even after multiple reflow soldering, excellent in drop impact resistance, and suitable in the shape of a bump. The solder alloy has an alloy composition comprising, in mass%, 0.10 to 3.00% of Ag, 0.80 to 6.00% of Cu, 0.08 to 0.60% of Ni, 0.0010 to 0.0150% of Ge, and the balance of Sn. It is preferable that the alloy composition further contains 0.1% or less of at least one of Bi, Sb, In, Zn, Ga, Mn, Cr, Co, Si, Ti, and rare earths in total.

The invention discloses a high-temperature-stripping-resistant epoxy structural adhesive as well as a preparation method and application thereof, and belongs to the technical field of high-performance composite materials. The epoxy structural adhesive comprises bisphenol A type epoxy resin, novolac epoxy resin, polysiloxane-polyurethane modified epoxy resin, core-shell modified epoxy resin, PEEK ultrafine powder and other components, and through mutual cooperation of all the components, the problems that in a high-temperature service environment, the adhesive layer modulus of traditional adhesive is rapidly attenuated, and a bonding interface is prone to failure are solved; the epoxy structural adhesive provided by the invention has both rapid curing and heat resistance, is stable in interface bonding, has the highest modulus of 1.28 GPa at 80 DEG C, the highest peel strength of 7.8 N / mm at 80 DEG C, and a damage mode of cohesion or high-proportion mixed damage, and is especially suitable for structural bonding requirements of harsh scenes such as peripheral structures of automobile engines, high-temperature areas of electronic equipment and the like.

The invention relates to the technical field of semiconductor material processing, in particular to a preparation method of a piezoelectric composite substrate, which comprises the following steps: preparing two piezoelectric substrates and a support substrate; wherein one piezoelectric substrate is used as a donor substrate, and the other piezoelectric substrate is used as an auxiliary substrate; ion implantation is carried out in the donor substrate, a weakening layer is formed in the donor substrate, and the donor material layer side of the donor substrate and the auxiliary substrate are temporarily bonded through the connecting layer to form a first bonding body; stress is applied to the weakening layer, so that the weakening layer is broken, and a first composite substrate and a residual donor substrate are formed; bonding the donor material layer side of the first composite substrate with the support substrate to form a second bonding body; and corroding to remove a connecting layer of a temporary bonding interface of the donor material layer and the auxiliary substrate in the second bonding body, so that the auxiliary substrate is separated from the second bonding body, and the piezoelectric composite substrate is formed. According to the method, the piezoelectric substrate does not need to be greatly thinned, the single piezoelectric substrate can be reused, and the production cost is reduced.

The invention provides a preparation method of a high-thermal-conductivity silicon carbide particle reinforced aluminum-based composite material. The preparation method comprises the following steps: step 1, shaping silicon carbide particles; step 2, mechanical mixing; step 3, packaging; step 4, carrying out vacuum hot degassing; and fifthly, hot isostatic pressing treatment is conducted, specifically, the ingot blank is put into a hot isostatic pressing machine to be subjected to hot isostatic pressing, then an aluminum sheath of the ingot blank is removed through machining, and the high-thermal-conductivity silicon carbide particle reinforced aluminum-based composite material is obtained. According to the preparation method of the high-thermal-conductivity silicon carbide particle reinforced aluminum-based composite material, the preparation process of the high-thermal-conductivity aluminum-based composite material can be optimized, the specific surface area of particles is reduced, the bonding interface area of the composite material is reduced, and the thermal resistance of the composite material is reduced; the heat-conducting property of the composite material is improved; and the stress around the silicon carbide particles can be more uniform, and the mechanical property is better.

The invention provides a vector tracking-based steel reinforced concrete three-dimensional seven-phase mesoscopic model construction method, and a steel reinforced concrete three-dimensional seven-phase mesoscopic model comprises mortar, coarse aggregate, a coarse aggregate-mortar interface layer, reinforcing steel bars, a mortar-reinforcing steel bar bonding interface layer, profile steel and a profile steel-mortar bonding interface layer. Generating a cuboid matrix according to given height, length and width; generating section steel and a bonding layer between the section steel and mortar according to a given shape and size; reinforcing steel bars are generated according to the given position and size, and an interface layer between the reinforcing steel bars and mortar is generated; generating coarse aggregate according to a given shape and gradation, and generating an interface layer between the aggregate and mortar; aggregate is sequentially doped into a base body, and collision inspection is carried out on the aggregate and reinforcing steel bars, section steel and between the aggregate and the aggregate based on a vector tracking algorithm. Simulation precision is improved, interface layer description is perfected, rapid model generation is achieved, and the application capability of the model is enhanced.

The invention discloses a bus duct insulation performance evaluation system, and the system comprises a microscopic collection module which is used for collecting a joint interface microscopic image through a scanning electron microscope, and obtaining material distribution and defect parameters; the finite element analysis module is used for performing finite element analysis by utilizing the material distribution and defect parameters and calculating an electric field intensity gradient value; the electric field distortion identification module is used for identifying an electric field distortion area according to the electric field intensity gradient value and determining a partial discharge position coordinate; the dielectric parameter measurement module is used for measuring a dielectric constant and a loss factor at the partial discharge position coordinates to generate a change curve; the aging index calculation module is used for extracting peak value and slope characteristics from the change curve and calculating a material aging index; the correlation model building module is used for building a correlation model of the material aging index and the insulation strength and generating a prediction coefficient; and the evaluation optimization module is used for correcting the insulation performance evaluation value by using the prediction coefficient and outputting an optimization evaluation report.

The invention relates to a preparation, regulation and control method of a thermoplastic elastomer encapsulating material in the technical field of new materials, which comprises the following steps: realizing an in-situ reaction process by controlling the concentration and reaction temperature of reactive functional groups in the encapsulating material according to an interface reaction rate constant and active group distribution density; if the reaction conversion rate reaches a preset value, a chemically bonded interface bonding layer is formed; monitoring the stress distribution state in the rubber coating layer by adopting a stress analysis algorithm, and when detecting that local stress concentration exceeds the yield strength of the material, dispersing a stress concentration area by adjusting the length of a flexible chain segment and the density of a rigid cross-linking point in a cross-linking network; and deformation data and a bonding strength change trend of the interface bonding layer in the temperature cycling process are obtained, if the bonding strength attenuation rate exceeds a preset threshold value, a dynamic cross-linking mechanism is activated, and the dynamic equilibrium state of interface bonding is maintained through fracture and recombination of a reversible covalent bond.

The invention discloses an anti-oxidation coating and a manufacturing method thereof, and belongs to the field of coatings. The anti-oxidation coating is arranged on the surface of a zirconium alloy matrix, the anti-oxidation coating is a pure Cr coating, the hardness of the anti-oxidation coating is in gradient distribution in the thickness direction, the hardness of a surface layer is larger than that of a bottom layer, and the hardness gt of the bottom layer of the anti-oxidation coating is larger than that of gt; the hardness gt at the 1 / 2 thickness is 4GPa; the hardness of the surface layer is gt; and 6 GPa. Good bonding strength is achieved between the anti-oxidation coating and the zirconium alloy matrix, cracks are not prone to being generated on a bonding interface when the anti-oxidation coating serves in a long-term high-temperature and high-pressure corrosion environment, the service life of the zirconium alloy matrix can be effectively prolonged, and the reliability of the zirconium alloy matrix can be effectively improved.

The invention relates to the technical field of semiconductor packaging, and discloses a bonding wire welding method based on bare chip interconnection, and the method comprises the steps: collecting and fusing acoustic response and optical reflection signals of a bonding interface in real time through a multi-mode in-situ sensing mechanism integrating acoustic resonance and surface plasmon resonance; dynamically calculating the thickness, the mechanical coupling deformation and the energy dissipation state of the intermetallic compound layer; and the ultrasonic power and the bonding force are subjected to closed-loop adjustment in combination with a model prediction control algorithm, so that the welding process is evolved along a preset optimal physical path all the time. The system comprises a multi-mode sensing welding head, a synchronous data acquisition module, a state resolving module and a self-adaptive control module. The transparent and intelligent welding process is realized, and the bonding consistency, reliability and yield of high-density interconnection are remarkably improved.

The present invention relates to the technical field of composite materials, and solves the technical problem that it is difficult to prepare a diamond / aluminum composite material with a tightly bonded interface while ensuring high thermal conductivity in the prior art. In particular, it relates to a diamond / aluminum composite material with a nano-gradient interface and a preparation method thereof. The present invention introduces a carburizing method on the basis of the magnetron sputtering method, and realizes the in-situ generation of new phases in each modified layer from the outermost metal element layer to the diamond surface through adsorption and diffusion, promotes the transformation of the metal modified elements on the diamond particle surface into carbides, and constructs a nano-gradient interface carbide layer. While the nano-scale interface layer improves the interface bonding between diamond and aluminum, it minimizes the introduced interface thermal resistance to the greatest extent. The present invention combines magnetron sputtering deposition with the carburizing method to prepare a nano-gradient multi-carbide interface layer with precisely controllable thickness, enhances the degree of interfacial diffusion reaction between diamond and aluminum, weakens the interfacial phonon scattering, and can give full play to the high thermal conductivity of diamond particles more fully.

The invention provides a friction solid-phase additive manufacturing method for improving the bonding strength of dissimilar alloys through interlayer interface texturing. The method comprises the following steps that an aluminum alloy or magnesium alloy plate serves as a base body; depositing a first metal layer on the polished to-be-added area by adopting a friction solid-phase additive process; processing a preset micron-sized three-dimensional texture on the surface of the first metal layer by adopting a laser scanning system so as to form a textured interface, and meanwhile, removing new oxides on the surface of the first metal layer; on the textured interface, a second metal layer which is made of a material different from that of the first metal layer is deposited again through the friction solid-phase additive process, so that a bonding interface which is characterized by micromechanical interlocking is formed between the first metal layer and the second metal layer; layer-by-layer additive manufacturing of a stacked dissimilar alloy having a plurality of dissimilar metal bonding interfaces. According to the method, the interlayer bonding mode of the dissimilar alloy is changed, and the problems of layering and cracking of dissimilar alloy fusion welding additive manufacturing components are effectively solved.

The invention discloses an adhesive testing system, method and device, and relates to the technical field of adhesion testing, and the method comprises the following steps: obtaining a substrate surface image after an adhesive is stripped; a flexible isolation plate is arranged between the adhesive and the base material, and the flexible isolation plate is a hollowed-out isolation plate so that the adhesive and the base material can be bonded in a point-shaped mode. Performing color analysis on the surface image of the base material to determine a damage mode corresponding to each bonding point; the destruction mode comprises an adhesive body destruction mode, a base material body destruction mode and a bonding interface separation mode. And determining a test result of the adhesive based on the proportion of the bonding interface separation mode in the damage mode corresponding to all the bonding points. By arranging the hollowed-out isolation plate between the adhesive and the base material, even if the base material is an elastic base material with low modulus, stripping of the adhesive and the base material can be smoothly achieved. Based on the visual identification part, automatic evaluation of the adhesion effect of the adhesive can be realized, so that the adhesion effect of the adhesive can be evaluated more accurately.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a through-silicon via (TSV) may be disposed through at least one of the microelectronic substrates. The TSV is exposed at the bonding interface of the substrate and functions as a contact surface for direct bonding.

The invention provides a bonding method, which comprises the following steps of: providing a first silicon substrate which comprises a central region and an edge region, and forming a step at the joint of the edge region and the central region; forming a getter layer on the edge area, wherein the getter layer covers the surface and the side wall of the step; forming a plurality of cavities in a blank area of the central area; providing a second silicon substrate, and directly bonding the second silicon substrate with the surface, provided with the getter layer, of the first silicon substrate; and carrying out annealing treatment. According to the method, the first silicon substrate and the second silicon substrate are activated, so that the first silicon substrate and the second silicon substrate can realize high-quality bonding at a relatively low annealing temperature, and relatively high bonding force is kept. By forming a plurality of concave cavities and getter layers, gas such as water vapor and the like generated in a low-temperature annealing process can be quickly and effectively absorbed during escape and diffusion in any direction, so that accumulation of the gas at a bonding interface is effectively avoided, formation of holes is effectively prevented, and the reliability and stability of direct bonding are improved.

The invention provides a laser processing device and method, and the device comprises a laser device which is used for emitting laser; the optical system comprises a collimating lens, a shaping lens and a focusing lens, the laser is collimated and amplified by the collimating lens and then enters the shaping lens, the incident laser is converted into a flat-topped light spot from a Gaussian light spot by the shaping lens, and the flat-topped light spot is positioned on a bonding interface by moving the position of the focusing lens; the displacement table system comprises a longitudinal displacement table and a horizontal displacement table, and the longitudinal displacement table is used for driving the focus lens to move synchronously, so that the flat-topped light spot is located on a bonding interface; the horizontal displacement table is used for driving the heterogeneous bonding material to move synchronously so as to realize that the flat-topped light spot scans the whole bonding interface; the in-situ observation system is used for obtaining light spot images of the surface and the bonding interface at at least one height measurement point; and the processing control system is used for obtaining the moving distance of the focus lens according to the light spot image of the height measurement point so as to adjust the position of the focus lens. According to the method, the bonding interface can be optimized.

A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.

The invention discloses a wafer bonding method and a heterogeneous wafer, and relates to the technical field of semiconductor materials.The wafer bonding method comprises the steps that contact pressing is conducted, at least one of a first wafer and a second wafer is made to rotate around the axis of the first wafer and the second wafer, so that the relative rotation angle of the first wafer and the second wafer in the circumferential direction reaches a preset value, and the first wafer and the second wafer are laminated under a preset pressure, and the preset value is adjusted according to the materials of the first wafer and the second wafer. According to the wafer bonding method, the bonded wafers rotate around the axes of the wafers in the contact pressing step, the chemical matching environment of the bonding interface is improved by adjusting the relative rotation angle of the two wafers in the circumferential direction, the adverse effect on wafer bonding caused by stress generated by lattice mismatch is reduced, the overall bonding quality is improved, and the wafer bonding quality is improved. The bonding strength is greatly improved, and the bonding stability is enhanced.

The invention provides a magnesium alloy welding method based on a semi-solid intermediate layer and pulse current and a connector, and relates to the technical field of material welding, the magnesium alloy diffusion welding method based on the semi-solid intermediate layer comprises the steps that raw materials of a brazing filler metal layer are taken to be smelted, then poured into a mold and cooled to the room temperature, and the solidified brazing filler metal layer is obtained; the solidified brazing filler metal layer is subjected to solution treatment, the brazing filler metal layer subjected to solution treatment is subjected to aging treatment, and a semi-solid brazing filler metal layer is obtained; and the semi-solid brazing filler metal layer is arranged between the two magnesium alloys to serve as a middle layer, pulse current diffusion welding is conducted, and the magnesium alloy connector is obtained. In the welding process, local high temperature of a welding seam is diffused and welded through pulse current to avoid deformation of the magnesium alloy, sharp hard solid-phase particles in the semi-solid middle layer extrude and damage an oxide film existing on the surface of the base metal magnesium alloy, and meanwhile, a liquid phase of the semi-solid middle layer greatly reduces the welding pressure and rapidly fills bonding interface pores; and small-deformation and high-strength metallurgical bonding of the joint is quickly realized.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad may be disposed at a bonding surface of at least one of the microelectronic substrates, where the contact pad is positioned offset relative to a TSV in the substrate and electrically coupled to the TSV.

The invention discloses a method for preparing a diamond grinding wheel through a binding agent doped with a rare earth material, and particularly relates to the technical field of diamond grinding wheels, and the method comprises the steps of S1, diamond abrasive particle pretreatment, S2, composite binding agent preparation, S3, gradient charging and S4, spark plasma sintering. According to the method, abrasive particle concentration and density gradient distribution is formed on a grinding wheel working layer through a gradient charging process, and a reinforced reaction layer is formed on a diamond-binding agent interface in combination with a rare earth additive, so that remarkable improvement of the grinding efficiency, great reduction of the abrasive particle falling-off rate and optimization of comprehensive mechanical properties are synergistically realized; and meanwhile, the impact resistance and the heat dissipation capacity are enhanced through the edge strengthening area and the multi-stage pore structure, and the application scene in the high-hardness material machining field is effectively expanded.

The invention relates to the field of wafer testing, and provides a wafer bonding force testing method for manufacturing an image sensor, which comprises the following steps: testing a wafer body by using bonding force testing equipment, the wafer body comprises an upper wafer and a lower wafer, the upper wafer is connected with the lower wafer through a bonding interface, and the lower wafer is connected with the bonding interface; the bonding force testing equipment comprises a bottom plate, a positioning assembly, a liquid suction assembly and a cutter assembly, the positioning assembly comprises a machining table and a fixing plate, the liquid suction assembly comprises a wedge-shaped seat, a third elastic part, a guide plate and two movable cleaning assemblies, and the cutter assembly comprises a mounting seat, an air cylinder and a piston rod. According to the invention, the wafer body can be automatically pressed and fixed and can be automatically released, and the cutter body can be automatically inserted into the bonding interface, so that the bonding interface generates a bonding crack, and the testing efficiency is improved.

The present invention relates to a method for hydrophilically bonding a first substrate (S1) to a second substrate (S2), the method comprising: bringing the first substrate (S1) into contact with the second substrate (S2) to form a bonding interface between the main surface of the first substrate and the main surface of the second substrate, applying a heat treatment suitable for sealing the bonding interface, the method being characterized in that it comprises: before the step of contacting, depositing a bonding layer (12) made of a non-metallic material on the main surface of the first substrate and / or the second substrate, the non-metallic material being permeable to hydrogen and having a yield strength at the temperature of the heat treatment lower than at least one of the materials of the first substrate (S1) and the second substrate (S2) located at the bonding interface, the thickness of the layer being 1 nm to 6 nm, and the heat treatment being carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.