445results about How to "Maintain structural integrity" patented technology

A process for producing solid nanocomposite particles for lithium metal or lithium ion battery electrode applications is provided. In one preferred embodiment, the process comprises: (A) Preparing an electrode active material in a form of fine particles, rods, wires, fibers, or tubes with a dimension smaller than 1 μm; (B) Preparing separated or isolated nano graphene platelets with a thickness less than 50 nm; (C) Dispersing the nano graphene platelets and the electrode active material in a precursor fluid medium to form a suspension wherein the fluid medium contains a precursor matrix material dispersed or dissolved therein; and (D) Converting the suspension to the solid nanocomposite particles, wherein the precursor matrix material is converted into a protective matrix material reinforced by the nano graphene platelets and the electrode active material is substantially dispersed in the protective matrix material. For a lithium ion battery anode application, the matrix material is preferably amorphous carbon, polymeric carbon, or meso-phase carbon. Such solid nanocomposite particles provide a high anode capacity and good cycling stability. For a cathode application, the resulting lithium metal or lithium ion battery exhibits an exceptionally high cycle life.

A golf club with improved performance over a larger percentage of the strike face, including the lower extremities of the face, is disclosed and claimed. The club head has a coefficient of restitution that approaches substantial uniformity across the face. The golf club head includes a body having a face, a sole, a transition zone between the face and the sole. The transition zone has an internal surface and an external surface. Both the internal and external surfaces have radii of curvature greater than 0.2 inch. The transition zone transitions smoothly from the face, through the transition zone, to the sole. An extension may be provided adjacent the transition zone, cooperating with the transition zone to form a chamber. Dampening and / or weight inserts may be positioned within the chamber.

This invention relates to the field of electrophoretic displays. In particular, it relates to imagewise opening, filling, and sealing multicolor display components and the manufacture of multicolor displays.

This invention relates to the field of electrophoretic displays. In particular, it relates to imagewise opening, filling and sealing multicolor display components and the manufacture of multicolor displays.

A plastic pallet (10) having good load bearing construction and held together without mechanical fasteners, includes deck boards (30). The deck boards include ridges (24) on an upper side (32) and a lower side (34) thereof. Deck boards are positioned transversely on stringers (12) and joined thereto by either an adhesive or thermoplastic welding processes. The stringers and deck boards may be provided with end caps (26, 42) which seal interior areas of the stringers and deck boards and prevent tearing thereof. The stringers and deck boards have interior reinforcement ribs (22,40). The cross sectional profiles of the stringers, deck boards, and end caps provide a cost effective and light weight pallet. Openings which extend between the stringers allow for either two way fork entry and / or four way fork entry. The stringers and deck boards provide flexibility in constructing pallets of various designs. The plastic pallet preferably is highly durable and fully recyclable.

The thermal management and method for large scale processing of CIS and / or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

The thermal management and method for large scale processing of CIS and / or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

The thermal management and method for large scale processing of CIS and / or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

The thermal management and method for large scale processing of CIS and / or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

A clamshell package for supporting an article is provided including a covered manufacturing hinge adapted to divide the clamshell into first and second parts adapted to form a cavity. The first and second parts partially overlap to form a flange adjacent the manufacturing hinge. The second part includes an uncovered operating hinge, about which the second part is adapted to pivot away from the first part to an open position. The clamshell package includes a panel adapted to engage the manufacturing hinge and flange to retain the manufacturing hinge in a folded position, with the panel being spaced from the operating hinge.

The thermal management and method for large scale processing of CIS and / or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

The thermal management and method for large scale processing of CIS and / or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

This application relates to a method for pellerizing and taking intensive measurements of a raw sample. The method includes homogenizing and pelletizing the sample that is to be subjected to compositional or intensive analysis. The raw sample is mixed with several solutions containing epoxies and activators based in carrier solutions or solvents, and ground to a fine powder or gel. The gel is partially dried and conformed to a pellet shape. The pellet is then cured such that the epoxy and activator solutions react and form a binding agent capable of maintaining the structural integrity of the sample pellet during intensive analysis. An intensive analysis instrument, such as LIBS, may then be used to ablate the surface of the pellet. The pellet provides consistent ablation of the sample material for accurate intensive measurements.