16299results about How to "Reduce concentration" patented technology

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.

The flavor and aroma characteristics of the smoke of a tobacco blend incorporating Oriental tobacco are improved by subjecting that blend to heat treatment. Oriental tobacco having a relatively high sucrose ester content is combined with a second dissimilar Oriental tobacco material and / or a non-Oriental tobacco material to form a tobacco mixture, and that mixture is heated for a time and under conditions sufficient to reduce the concentration of sucrose esters in the Oriental tobacco. Tobacco blends having reduced levels of sucrose esters yield smoke that does not possess undesirable off-notes provided by pyrolysis products of those sucrose esters; namely, 2-methylpropionic acid, 3-methylbutyric acid and 3-methylpentanoic acid.

An analyte sensor for use in connection with a biofluid is described. The analyte sensor may comprise any suitable interface between the biofluid and a derivative of the biofluid and any suitable transducer of information concerning an analyte. At least one catalytic agent is provided in a locale or vicinity of the interface. The catalytic agent, such as a proteinaceous agent or a non-proteinaceous, organic-metal agent, is sufficient to catalyze the degradation of reactive oxygen and / or nitrogen species that may be present in the vicinity of the interface. An analyte-sensing kit and a method of sensing an analyte are also described.

The invention aims at enabling leakage current characteristics and a step coverage property to be improved by depositing a hafnium silicate film by utilizing an atomic layer evaporation method using a hafnium raw material, a silicon raw material and an oxidizing agent. Disclosed herein is a method of manufacturing a semiconductor device having a trench capacitor including a first electrode formed on an inner surface of a trench, a capacitor insulating film formed on a surface of the first electrode, and a second electrode formed on a surface of the capacitor insulating film. The method includes the step of depositing the capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.

A method for the treatment of obesity or other disorders by electrical activation or inhibition of nerves is disclosed. This activation or inhibition can be accomplished by stimulating a nerve using an electrode. Dynamic stimulation through ramped cycling of electrical stimulation, stimulation frequency alteration, and / or duty cycle variance can produce therapeutic benefits.

A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.

A light emitting device has: a light emitting element; a lead that is electrically connected to the light emitting element at its one end and serves as a terminal to supply a power source to the light emitting element; a metal base that the light emitting element is mounted thereon and radiates heat of the light emitting element; and a sealing member that is of transparent resin or glass and covers the light emitting element. The lead is secured to the metal base by a heat-resisting insulating member with a thermal expansion coefficient nearly equal to that of the metal base.

A method and apparatus for mixing fluids, such as beverage syrup and water, uses countercurrent injection to improve blending of the fluids. A mixing chamber has a first inlet through which a first fluid is fed to the mixing chamber, and a second inlet through which a countercurrent injection nozzle extends and is operative to inject a second fluid into a stream of the first fluid. The countercurrent injection nozzle is equipped with a check valve to control the flow of fluid into the mixing chamber. The mixing chamber may include additional inlets that may be fitted with countercurrent injection nozzles to permit the countercurrent injection of other fluid, such as flavorings, into the stream of the first fluid.

A method of manufacturing a semiconductor device includes: the first step of forming a gate electrode over a silicon substrate, with a gate insulating film; and the second step of digging down a surface layer of the silicon substrate by etching conducted with the gate electrode as a mask. The method of manufacturing the semiconductor device further includes the third step of epitaxially growing, on the surface of the dug-down portion of the silicon substrate, a mixed crystal layer including silicon and atoms different in lattice constant from silicon so that the mixed crystal layer contains an impurity with such a concentration gradient that the impurity concentration increases along the direction from the silicon substrate side toward the surface of the mixed crystal layer.

A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided. The method for fabricating a semiconductor device comprises steps of intentionally introducing the metal element which promotes crystallization of silicon to the amorphous silicon film and crystallizing the amorphous silicon film by a first heat treatment to obtain the crystal silicon film; eliminating or reducing the metal element existing within the crystal silicon film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming another thermal oxide film on the surface of the region from which the thermal oxide film has been eliminated by implementing another thermal oxidation.

The present invention provides an in vitro system for compartmentalization of molecular or cellular libraries and provides methods for selection and isolation of desired molecules or cells from the libraries. The library includes a plurality of distinct molecules or cells encapsulated within a water-in-oil-in-water emulsion. The emulsion includes a continuous external aqueous phase and a discontinuous dispersion of water-in-oil droplets. The internal aqueous phase of a plurality of such droplets comprises a specific molecule or cell that is within the plurality of distinct molecules or cells of the library.

Extended release formulations for the delivery of opioid agonists, including oxycodone, are provided which exhibit low peak to trough plasma concentration fluctuations and sufficiently high plasma concentrations over an extended period of time to provide a once a day dosage administration, wherein the formulations provide pain relief for up to 24 hours The extended release formulations may be customized to achieve the desired plasma concentration profile, e.g. two or more different extended release drug-loaded pellets or granules may be combined in a formulation. Additional formulations include combinations of drug loaded and extended release opioid agonists-loaded pellets or granules. Other formulations include a combination of an opioid agonist and an opioid antagonist, as well as a combination of an opioid agonist and a NSAID.

This invention relates to a method of reducing an irritating or adverse side effect associated with the topical use of an active ophthalmic drug comprising incorporating an effective amount of a cyclodextrin or cyclodextrin derivative into a formulation to complex the active drug such that the concentration of the free active drug is reduced below a tolerable threshold, and incorporating an effective amount of a viscosity increasing agent in said formulation such that the bioavailability of said drug is high enough to be therapeutically effective, wherein the cyclodextrin or cyclodextrin derivative is not required to solubilize the active drug. Another aspect of this invention relates to topical ophthalmic formulations comprising an active drug, a cyclodextrin or cyclodextrin derivative, and a viscosity-enhancing agent, in effective amounts as stated above.

Embodiments of the present disclosure includes a portable pulse oximeter, such as a handheld pulse oximeter, that provides a user with intuitive key navigation for device operation, which reduces an amount of visual concentration needed to handle and operate the oximeter. In various embodiments, the portable pulse oximeter includes one or more of user input keys disposed along curve, an alignment edge providing guidance by feel of a user's digits to the input keys, raised convex keys also providing navigation by feel, a protective boot disposed around various portions of the oximeter housing to protect against impacts, a table-top stand, combinations of the same, or the like.

The present disclosure discloses a MOSFET and a method for manufacturing the same, wherein the MOSFET comprises: an SOI wafer which comprises a semiconductor substrate, a buried insulating layer, and a semiconductor layer, the buried insulating layer being on the semiconductor substrate, and the semiconductor layer being on the buried insulating layer; a gate stack on the semiconductor layer; a source region and a drain region, which are in the semiconductor layer and on opposite sides of the gate stack; and a channel region, which is in the semiconductor layer and sandwiched by the source region and the drain region, wherein the MOSFET further comprises a back gate, the back gate being located in the semiconductor substrate and having a first doped region in a lower portion of the back gate and a second doped region in an upper portion of the back gate. The MOSFET can adjust the threshold voltage by changing the doping type and doping concentration of the anti-doped region.

Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Then, the thermal oxide film 106 is removed. Thereby, a crystalline silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

A process is provided for producing peroxycarboxylic acids from carboxylic acid esters. More specifically, carboxylic acid esters are reacted with an inorganic peroxide, such as hydrogen peroxide, in the presence of an enzyme catalyst having perhydrolysis activity. The present perhydrolase catalysts are classified as members of the carbohydrate esterase family 7 (CE-7) based on the conserved structural features. Further, disinfectant formulations comprising the peracids produced by the processes described herein are provided.

The invention comprises the use of activity-reducing effectors of dipeptidyl peptidase (DP IV) and DP IV-analogous enzyme activity in the blood of a mammal to lower the blood sugar level and the blood pressure in mammalian organisms.

A method for the treatment of obesity or other disorders by electrical activation or inhibition of nerves is disclosed. This activation or inhibition can be accomplished by stimulating a nerve using an electrode. Dynamic stimulation through ramped cycling of electrical stimulation, stimulation frequency alteration, and / or duty cycle variance can produce therapeutic benefits.

The present invention provides improved devices and methods for inhibiting restenosis and hyperplasia after intravascular intervention. In particular, the present invention provides luminal prostheses which allow for programmed and controlled substance delivery with increased efficacy to selected locations within a patient's vasculature to inhibit restenosis. The luminal delivery prosthesis comprises a scaffold which is implantable within a body lumen and means on the scaffold for releasing a substance from the scaffold. The substance is released over a predetermined time pattern comprising an initial phase wherein the substance delivery rate is below a threshold level and a subsequent phase wherein the substance delivery rate is above a threshold level.

Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.

The present invention provides new compositions for transposase-mediated fragmenting and tagging DNA targets. The invention relates to the surprising discovery that use of manganese ions (Mn2+) in transposase reactions improves the transposase reaction. It also relates to the surprising discovery that Mg2+ ions can be used in a transposase reaction with wild-type and / or engineered transposases at levels much higher than previously thought. The invention provides for the use of naturally-occurring transposases in in vitro reactions, as well as improved schemes for cleaving, tagging, and amplifying target DNA.

In a method of manufacturing a semiconductor device, an insulating film having an opening is formed on an amorphous film 103 containing silicon therein. After catalytic elements are introduced from the opening, the amorphous film 103 is crystallized. Thereafter elements (phosphorus) selected from Group XV are introduced from the opening, and then a heat treatment is conducted to obtain a film having crystallinity. Thereafter, a portion of the film containing silicon into which the catalytic elements and phosphorus is introduced are removed.

A method of improving emission performance of a gas turbine is provided. The method includes recirculating a portion of an exhaust gas stream to a compressor of the gas turbine via an exhaust gas recirculating system, to reduce concentration of oxygen in a high pressure feed oxidant stream into a combustor of the gas turbine. The method further includes adding diluent to at least one of a fuel stream directed to the combustor or a low pressure feed oxidant stream directed to the compressor, to reduce concentration of oxides of nitrogen (NOx) and increase concentration of carbon dioxide in a resultant exhaust gas stream.

A process for removing soluble and insoluble inorganic, organic, and microbiological contaminants from a fluid stream employing a pretreatment module, a post-treatment module, a recycle stream module or any combination thereof, and a membrane module, is provided. The process provided reduces the problems associated with membrane fouling and increases contaminant removal capacity.

The present disclosure provides a device having a casing with a barrier surface and a contact surface and a composition in the casing having a nitric oxide precursor and an isolated enzyme or live cell expressing an endogenous enzyme, for converting the nitric oxide gas precursor to nitric oxide gas or having activity on a substrate that produces a catalyst that causes the conversion of the nitric oxide gas precursor to nitric oxide gas. The present disclosure also provides methods and uses for treating wounds, microbial infections and dermatological disorders and for preserving meat products.

In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

A method is disclosed for intermittently mitigating hazardous sulfur compounds, such as hydrogen sulfide, mercaptans and sulfur oxides, from a fluid in the head space of a wellbore. The method comprises contacting the fluid with a foamed aqueous stream comprising an active scavenging agent, such as a triazine, and a stiff foaming agent. The scavenging agent reacts with hazardous sulfur compounds to eliminate the compounds from the fluid stream in the vapor space of the wellbore without withdrawing the hydrocarbon from the wellbore and without releasing hazardous sulfur compounds to the environment.

The present invention relates to a method of manufacturing the light emitting component of a VECSEL and the corresponding VECSEL. In the method a layer stack (2) is epitaxially grown on a semiconductor substrate (1). The layer stack comprises an active region (4), an upper distributed Bragg reflector (5) and a n- or p-doped current injection layer (13) arranged between the active region (4) and the semiconductor substrate (1). A mechanical support (6) or submount is bonded to an upper side of the layer stack (2) and the semiconductor substrate (1) is subsequently removed. A metallization layer (7) is optionally deposited on the lower side of the layer stack (2) and an optically transparent substrate (8) is bonded to this lower side. The proposed method allows the manufacturing of such a component in a standard manner and results in a VECSEL with a homogenous current injection and high efficiency of heat dissipation.