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223results about How to "Avoid many problems" patented technology

Plasma reactor with internal transformer

There is provided a plasma reactor with an internal transformer. The plasma reactor comprises: a plasma chamber with a gas inlet and a gas outlet, for providing a plasma discharging space; one or more core cylinder jackets for providing a core storage space in the plasma discharging space and forming a plasma centralized channel and a plasma decentralized channel by including one or more through-apertures; and one or more transformers each including a magnetic core with primary winding surrounding the through-aperture and installed in the core storage space, wherein the plasma discharging space comprises one or more first spatial regions to form the plasma centralized channel and one or more second spatial regions to form the plasma decentralized channel. In the plasma reactor, since the transformer is installed in the plasma chamber, energy is transferred with almost no loss from the transformer to the plasma discharging space and therefore the energy transfer efficiency is very high. Then, since most of gases flow through the first spatial region and the through-aperture inside the plasma chamber, most of active gases are generated in the plasma centralized channel. Consequently, the plasma reactor is very suitable for generating large amount of active gases. Further, even though the plasma chamber is composed of a conductive material, since no special insulating region needs to be formed, it is very easy to constitute the plasma chamber. Further, since the plasma chamber itself is sufficiently capable of forming an outer case, the plasma reactor is very simply manufactured.
Owner:NEW POWER PLASMA CO LTD

Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage

Complementary LDMOS and MOS structures and vertical PNP transistors capable of withstanding a relatively high voltage may be realized in a mixed-technology integrated circuit of the so-called "smart power" type, by forming a phosphorus doped n-region of a similar diffusion profile, respectively in: The drain zone of the n-channel LDMOS transistors, in the body zone of the p-channel LDMOS transistors forming first CMOS structures; in the drain zone of n-channel MOS transistors belonging to second CMOS structures and in a base region near the emitter region of isolated collector, vertical PNP transistors, thus simultaneously achieving the result of increasing the voltage withstanding ability of all these monolithically integrated structures. The complementary LDMOS structures may be used either as power structures having a reduced conduction resistance or may be used for realizing CMOS stages capable of operating at a relatively high voltage (of about 20V) thus permitting a direct interfacing with VDMOS power devices without requiring any "level shifting" stages. The whole integrated circuit has less interfacing problems and improved electrical and reliability characteristics.
Owner:STMICROELECTRONICS SRL
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