170 results about "Core Storage" patented technology

Machine for ground drilling, with a circulating fluid, by the utilization of electric discharge generated by high-voltage pulses between electrodes. It may comprise: —A drill-bit 1 with electrodes movable relative to each other, so that bottom-hole physical contact be secured for all the electrodes 4 on all bottom-hole topographies. —Pointed hydraulic nozzles for jetting the fluid, to remove primary cuttings and with pressure expansion across the nozzles 7 at no less than 4 MPa. —A high-voltage pulse generator deployed down-hole at a minimum distance from the drill-bit 1. —A rotating or oscillating bit causing the borehole cross-sectional excavation to occur, and electric discharge between a plurality of electrodes situated on the bit face along one or a few radii and tangents. —A bottom hole assembly for annular hole-making with core storage, transportation, down-hole closed loop discharge fluid circulation. A discharge fluid storage may be incorporated. A drilling method is also described.

A memory may include first and second buffer memories and a memory core. The memory core may include memory blocks each having a plurality of pages and a page buffer for reading data from a selected memory block. A control logic may control the first and second buffer memories and the memory core. The control logic may have a register for storing address and command information of the memory core. The control logic may control the memory core so that data read periods for pages of the selected memory block are carried out according to the stored address and command information. The control logic may control the first and second buffer memories and the memory core so that data in the page buffer may be transferred to the first and/or second buffer memories during the data read periods. The control logic may deactivate an interrupt signal when data in the page buffer is transferred to the first and/or second buffer memory and may activate the interrupt signal when data in the first and/or second buffer memory is transferred to an external storage.

The invention relates to a novel waste power battery full-automatic dismantling device including: 1, a loading mechanism, 2, a loading conveyer, 3, a four-station material poking mechanism, 4, material distribution conveyers, 5, cutting devices, 6, separation feeding mechanisms, 7, separators, 8, outer shell storage boxes, and 9, electric core storage boxes. Along the power battery heading direction, the loading mechanism, the loading conveyer, the four-station material poking mechanism, the material distribution conveyers, the cutting devices, the separation feeding mechanisms and the separators are successively arranged; the outer shell storage boxes and the electric core storage boxes are respectively connected with the separators. The invention also relates to a novel waste power battery full-automatic dismantling method. The device has the advantages of simple structure and high dismantling efficiency, adopts a battery mechanical dismantling way integrating electrode head end one-time cutting and electric core clipping-out, and belongs to the power battery recycling processing field.

A method is used in managing log transactions in storage systems. A first portion of a transaction log space is allocated from a persistent journal associated with a file system to a first core of a multi-core storage processor and a second portion of the transaction log space is allocated from the persistent journal to a second core of the multi-core storage processor. A set of per-core bitmaps is used for allocating a set of transaction log entries from the persistent journal. Each per-core bitmap is associated with a respective core of the multi-core storage processor. A per-core bitmap of the set of per-core bitmaps associated with a core of the multi-core storage processor is used for allocating a transaction log entry for a write request performed by the core.

There is provided a plasma reactor with an internal transformer. The plasma reactor comprises: a plasma chamber with a gas inlet and a gas outlet, for providing a plasma discharging space; one or more core cylinder jackets for providing a core storage space in the plasma discharging space and forming a plasma centralized channel and a plasma decentralized channel by including one or more through-apertures; and one or more transformers each including a magnetic core with primary winding surrounding the through-aperture and installed in the core storage space, wherein the plasma discharging space comprises one or more first spatial regions to form the plasma centralized channel and one or more second spatial regions to form the plasma decentralized channel. In the plasma reactor, since the transformer is installed in the plasma chamber, energy is transferred with almost no loss from the transformer to the plasma discharging space and therefore the energy transfer efficiency is very high. Then, since most of gases flow through the first spatial region and the through-aperture inside the plasma chamber, most of active gases are generated in the plasma centralized channel. Consequently, the plasma reactor is very suitable for generating large amount of active gases. Further, even though the plasma chamber is composed of a conductive material, since no special insulating region needs to be formed, it is very easy to constitute the plasma chamber. Further, since the plasma chamber itself is sufficiently capable of forming an outer case, the plasma reactor is very simply manufactured.

The invention provides a three-dimensional memory and a manufacturing method of the three-dimensional memory. The three-dimensional memory comprises a core storage circuit and a peripheral circuit. Atleast one storage string is formed in the core storage circuit. The three-dimensional memory also comprises a substrate, wherein the peripheral circuit is formed on the substrate; a common source electrode line layer which is formed on the peripheral circuit and electrically connected with the peripheral circuit; and a doped semiconductor material layer which is formed on the common source electrode line layer, wherein the core storage region is arranged on the semiconductor material layer.

A coring tool for use in a borehole formed in a subterranean formation includes a tool housing with a coring aperture and a core receptacle. A coring bit is mounted within the tool housing and movable between retracted and extended positions by a series of pivotably connected extension link arms. Another set of link arms rotates the coring bit between coring and eject positions. The coring tool may also include a multi-column core storage magazine with shifters to move cores or core holders between columns. The coring tool may be used to measure core lengths during operation and facilitates retrieval of cores having larger lengths and diameters than conventional sidewall coring tools.

The invention provides an in-situ preserving coring system and method, and belongs to the field of in-situ mechanical research of rock masses. The coring system comprises a coring drilling tool and rock core preserving equipment, the coring drilling tool comprises a drill bit and a drilling tool body connected with the drill bit, a pressure testing device is arranged on the portion, close to the drill bit, of the side wall of one end of the drilling tool body, and a temperature testing device and a humidity testing device are arranged above the pressure testing device; the rock core preserving equipment comprises an equipment body, a core storage tube capable of freely sliding in the equipment body in the axial direction is arranged in the equipment body, the core storage tube is a hollow cavity and is used for storing rock cores subjected to drilling, the outer wall of the equipment body is provided with a pressure preserving device, a heat preserving device and a humidity preserving device which are connected with the core storage tube respectively, and a ball valve connected with the front end of the equipment body is further included. The ball valve is switched on, rock core drilling is conducted, the drilled rock cores gradually enter the core storage tube along with drilling of the coring drilling tool, after rock core drilling is completed, the ball valve is switched off, and the drilled rock cores are stored in the sealed core storage tube. The in-situ preserving coring system and method are suitable for mechanical property research of the rock masses.

Techniques and mechanisms for providing state information describing one or more data errors detected locally at a memory device. In an embodiment, the memory device includes a memory core and error detection circuit logic configured to detect for errors of data stored by the memory core. A die of the memory device includes both the memory core and the error detection circuitry. In another embodiment, state information is stored in a mode register of the memory device in response to the error detection logic detecting an occurrence of a data error. The state information is available for access by a memory controller or other agent which is external to the memory device.

The invention discloses a forming method of a semiconductor structure. The method comprises the following steps: providing a substrate which comprises a first region for forming a core storage circuit; orderly forming a gate electrode film and an initial hard mask film on the substrate; etching the initial hard mask film by using the first etching process, forming a first opening penetrating through the initial hard mask film in the first region; filling a sacrifice layer in the first opening; etching the sacrifice layer and the substrate at the bottom of the first opening by using the second etching process, and forming a first groove in the first region substrate; and forming a first isolation structure in the first groove. The method comprises: firstly forming the first opening penetrating through the initial hard mask film in the first region, and then filling the sacrifice layer in the first opening to form the first groove, wherien the sacrifice layer is firstly etched along the first opening and then the substrate is etched, thereby acquiring the first groove with small depth so as to reduce the depth-to-width ratio of the first groove; and the condition of forming a gap in the first isolation structure is avoided, thereby improving the forming quality of the first isolation structure, and then improving the electric property of a semiconductor device.

The invention discloses a remote communication security management architecture of a ubiquitous green community control network and a method for constructing the same. For a remote communication process of a ubiquitous green community control network, information transmission and invoking are carried out by a backbone network based on a TCP/IP protocol. According to the security management architecture, on the basis of a ubiquitous green community control network, a new security management center is deployed; security management modules are added to a gateway and terminal equipment, so that the gateway and the terminal equipment are updated as a secure gateway and a secure terminal; and a memory is divided into a general-purpose memory and a core memory and an application unit is further divided into a service type application unit and a user type application unit. According to the disclosed security management method, distributed security management is realized and level-to-level security management with different security levels is supported. And under the precondition that an original network architecture is changed little, effective security guarantees can be realized for the remote communication process of the ubiquitous green community control network by supports for distributed and level-to-level management.

An integrated circuit includes an array of memory cells, each including a core storage element with first and second complementary storage nodes and first and second cell pass transistors coupled to the first and second storage nodes, respectively. In the cell, a first bitline (BL) is coupled to a first BL node in a source drain path of the first cell pass transistor, and a second BL is coupled to a second BL node in a source drain path of the second cell pass transistor. Each of the memory cells also includes a first buffer circuit comprising a first buffer pass transistor and a first driver transistor coupled to the source drain path of the first cell pass transistor, where the first buffer pass transistor is between the first BL node and the first driver transistor. The memory cells also include a second buffer circuit comprising a second buffer pass transistor and a second driver transistor coupled to a source drain path of the second cell pass transistor, where the second buffer pass transistor is between the second BL node and the second driver transistor. The gates of the first and second driver transistors are coupled to the second and first storage nodes, respectively. The cells include at least a first wordline coupled to the first and second cell pass transistors and the first and second buffer pass transistors.

The invention provides an embedded system and a dormancy and wake-up method of an application process thereof. The embedded system uses a traditional nonvolatile main storage and a dynamic random access memory (DRAM) internal storage to form a storage framework, the nonvolatile main storage is composed of a boot program storage area, a core storage area, a file system storage area and a progress mirror image backup area, wherein the progress mirror image backup area is divided into a mirror image indexing area and a mirror image data storage area, and can hang application processes in a nonvolatile storage. The embedded system and the dormancy and wake-up method can achieve system-level and single-process dormancy, enable process dormancy and wake-up management to be flexible and convenient, can reduce work load of data backup and recovery of dormancy and wake-up of the traditional embedded system and a large amount of storage spaces occupied by data backup in system dormancy, and accordingly improve operating efficiency of the embedded system.

An integrated circuit and methods of operating an integrated circuit and reducing a leakage current of an integrated circuit are provided. A functional memory of the integrated circuit includes row and column periphery units and an array of memory cells having a core storage element and a read buffer. Also included are read word lines that provide row access, and read bit lines that provide column access to the core storage element and the read buffer of a memory cell. The functional memory further includes a read buffer supply line that is connected to the read buffer, wherein the read buffer supply line is switchable between an operating mode output and a low-power mode output of a read buffer supply that is separate from core storage element supplies.

The invention relates to a content distribution and memory system in a video network on the basis of P2P technology and a method for the content distribution and memory system, which belong to the information transmission, internet audio and video application and distributed memory field. The system of the invention comprises a nucleus memory module, a resource scheduling module, a content index module, distributed memory submodules and a client module. The method which is realized by adoption of the system comprises an intelligent memory and distribution method on the basis of load balancing, a memory and distribution method on the basis of reception quality, a data distribution method from the memory submodules to a client on the basis of P2P, and a data distribution method between the memory submodules on the basis of P2P. The invention intelligently adjusts load conditions of each memory submodule through state monitoring of resource use conditions of each memory submodule of the distributed memory system, thereby load balancing is realized and service efficiency of network and memory resources is improved. moreover, reception quality is improved through monitoring of reception quality of the client and dynamic adjustment of distribution conditions of the network resources.

A storage cell is provided with improved robustness to soft errors. The storage cell comprises complementary core storage nodes and complementary outer storage nodes. The outer storage nodes act to limit feedback between the core storage nodes and are capable of restoring the logical state of the core storage nodes in the event of a soft error. Similarly the core storage nodes act to limit feedback between the outer storage nodes with the same effect. This cell has advantages compared with other robust storage cells in that there are only two paths between the supply voltage and ground which limits the leakage power. An SRAM cell utilizing the proposed storage cell can be realized with two access transistors configured to selectively couple complementary storage nodes to a corresponding bitline. A flip-flop can be realized with a variety of transfer gates which selectively couple data into the proposed storage cell.

The invention provides a content distribution network and a data downloading method. The content distribution network includes a core storage node and more than two edge buffering nodes in network connection, wherein edge buffering nodes in one region form an edge node unit. In an edge buffering node side, the method includes judging whether other edge buffering nodes in a current edge buffering node unit stores to-be-downloaded medium data or not; if the current edge buffering node unit stores to-be-downloaded medium data, selecting the current edge buffering node to store all the medium data and using an edge buffering node with the largest network bandwidth as a responding node, downloading the medium data from the responding node and saving the medium data in local; if current edge buffering node unit does not store the to-be-downloaded medium data, loop-source downloading from an upper-layer node and saving the medium data in local. By adopting the above method, a character that the edge buffering nodes of the same unit are generally in the same region is utilized fully, so that network cost can be saved and data transmission rate can also be ensured. The working efficiency can be improved effectively.

The invention provides a core segmented sealing device and its application method and belongs to the field of petroleum geology. The device comprises a core storage cylinder and inflation sealing rings. The core storage cylinder has a cylindrical structure, one end of which is a sealed end and the other end of which is an open end. The open end is provided with a top cover. At least two pilot holes are arranged on the wall of the core storage cylinder. Each pilot hole contains two through-holes which are apart from each other 180 degrees on a circle. Axes of all through-holes are vertical to the axis of the core storage cylinder 1. The inner wall of the core storage cylinder is provided with at least two annular seal grooves. Each annular seal groove is corresponding to a pilot hole. Each pilot hole enables its corresponding annular seal groove to be communicated with the outside world. One of the inflation sealing rings is installed in each annular seal groove. By the use of the device, rapid and segmented sealed storage of cores is realized, gas dissipation under the atmospheric condition is minimized, and a foundation is laid for the next steps of analytical tests and research work.

An integrated circuit includes a memory array including a plurality of memory cells, the memory cells include a core storage element having at least a first storage node (S) and a complementary second storage node (S-bar), and a first pass gate ) coupled to the first storage node (S). A single bitline (BL) is coupled to a node in a source drain path of the first pass gate. The BL is for Reading data from and Writing data to the first storage node (S). A buffer circuit includes a second pass gate and a driver transistor, wherein the second pass gate is coupled between the driver transistor and the source drain path of the first pass gate. A gate of the driver transistor is coupled to the second storage node (S-bar). At least one wordline (WL) is coupled to the first pass gate and the second pass gate.

The invention discloses a separate grid type flash memory manufacturing method and a separate grid type flash memory. The manufacturing method comprises the following steps: providing a semiconductor substrate including a core storage area and a peripheral circuit area, wherein at least one pair of grid lamination structures and sidewall dielectric layers covering the sides of the grid lamination structures are formed in the core storage area; forming a polycrystalline silicon layer covering the grid lamination structures, the sidewall dielectric layers and the exposed surface of the semiconductor substrate; etching the polycrystalline silicon layer in the core storage area in order to form word line grids on the outer side of each pair of grid lamination structures and form an erasable grid between the adjacent sidewall dielectric layers of each pair of grid lamination structures; and etching the polycrystalline silicon layer in the peripheral circuit area to form peripheral grids. According to the manufacturing method, the word line grids are formed through self-alignment, so that the symmetry of the formed word line grids is improved, and the performance of the separate grid type flash memory is improved.

The invention relates to an in-situ test system and method while drilling for coal seam gas content in an underground coal mine, and belongs to the technical field of coal mine safety. The in-situ test method while drilling comprises the steps that a special coring drill bit is connected with a coal core storage tube, and then connected with a special drill pipe and connected with a clamping device on a drilling rig; high-pressure water or compressed air is connected with a tail drill pipe through a special water tail, in the drilling process, the drill bit is replaced without removing the drill pipe, the coal core is directly drilled, and the coal core is cooled by the cold air, so that the internal moisture of the coal core is solidified, and gas dissipation of the coal core is prevented; and the coal core is sent to a laboratory, after the temperature of the coal core is raised, the solidified moisture is converted into a liquid state, the gas dissipates from the coal core storage tube, the natural gas content and the gas content after pulverization in the coal core storage tube are measured, and the gas content of the coal seam is calculated by combining industrial analysis, porosity and adsorption gas constants.