153 results about "Plasma chamber" patented technology

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

A pulse generator is disclosed. The pulse generator includes a DC source; a plurality of switches, a transformer; and a pulsing output. The pulse generator can be coupled with a plasma chamber. The pulsing output outputs high voltage pulses having a peak-to-peak voltage greater than 1 kV and a voltage portion between consecutive high voltage bipolar pulses that has a negative slope that substantially offsets the voltage reduction on a wafer within a plasma chamber due to an ion current. The resulting voltage at the wafer may be substantially flat between consecutive pulses.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

In one embodiment, a system for controlling a matching network of a semiconductor manufacturing system is disclosed. The matching network comprises an electronically variable reactance element (EVRE) that varies its total reactance using different match configurations. A plasma chamber carries out a process upon a substrate, the process comprising process steps including at least a first process step and a second process step. A memory, for each process step, stores instructions for carrying out the process step. A control circuit, while continuously carrying out each of the process steps of the process, upon anticipation that the plasma chamber will be transitioning from the first process step to the second process step, alters the match configuration to a new match configuration based on the instructions for carrying out the second process step.

A method for controlling particle growth in a processing chamber is disclosed herein. The method includes performing at least one plasma deposition process in a chamber using a precursor to form a layer on a substrate. The method also includes providing power to the chamber during the at least one plasma deposition process, and monitoring at least one criterion to determine when at least one plasma purge is to be performed. The method further includes performing at least one plasma purge by applying a gas into the chamber in response to at least one criterion indicating that the at least one plasma purge is to be performed.

The plasma chamber includes a chamber body having a processing region therein, a liner disposed on the chamber body and surrounding the processing region, a substrate support disposed within the liner, a magnet assembly having a plurality of magnets disposed around the liner, and a magnetic material shield disposed around the liner, the magnetic material shield enclosing the processing region near the substrate support.

A substrate processing apparatus with plasma control capabilities is disclosed. The apparatus comprises, a radio frequency (RF) source, a plasma chamber, and a plasma control system comprising: an impedance matching network comprising a first variable impedance matching device and a second variable impedance matching device; and a control circuit configured to: determine a first parameter of the first variable impedance matching device and a second parameter of the second variable impedance matching device, and a reflected RF power value (Pr) reflected back to the RF source, determine a matching point (MP) where the Pr is a specific value (P0), determine a plurality of matching edge points representing an edge RF power value (PE) that is greater than P0 by a predetermined margin (PM) based on the MP, wherein PE=P0+PM, and determine at least one of a size and a center location of an impedance matching area.

The invention relates to a sample analysis system. The sample analysis system is provided with a lens demisting device. The sample analysis system includes a plasma torch device (200) including a body defining a plasma chamber (202) and a plasma torch (201) supported by the body in the plasma chamber (202). The plasma torch (201) is electrically coupled to a power source and is operable to form a plasma from the sample fluid in the plasma chamber (202) when energized. The sample analysis system also includes a spectrometer (300) configured to analyze the plasma to measure an analyte of interest in the sample fluid by light emitted by the plasma. The spectrometer (300) comprises a collector tube (301) in visual communication with the plasma chamber (202), the collector tube (301) comprising a proximal end and a distal end, the distal end being equipped with a lens (302) configured to collect light emitted by the plasma. The light collecting tube (301) is at least partially inserted into the central passage (616) of the gas hood (610) such that the distal end of the light collecting tube (301) with the lens (302) is at least partially enclosed by the gas hood (610). A distal end (612) of the gas hood (610) includes a gas outlet port (619) and a gas inlet port (618) fluidly coupled with a source of pressurized gas, the gas hood configured to discharge a stream of gas across an exposed surface of the lens (302) to at least minimize fogging of the lens (302).

New substantially single-phase polycrystalline materials are disclosed. The new substantially single-phase polycrystalline materials generally include from 0.01-20 mol. % zirconia, at least 80 mol. % of one or more rare earth oxides (REO), and 40 to 7000 ppm aluminum by weight, wherein the substantially single-phase polycrystalline material comprises at least 95 wt. % of a solid-solution of REO-zirconia as measured by x-ray diffraction. The new substantially single-phase polycrystalline materials may realize a high density, such as a density of at least 95% of theoretical density, or higher. The new substantially single-phase polycrystalline materials may be in the form of a semiconductor component, including those suited for use in a plasma chamber environment.

A transformation system for connecting a plasma process control system to an impedance matching circuit A, the impedance matching circuit A being connectable to an RF generator and a plasma chamber and including a first transformation device and a communication device. The communication device is connectable to the plasma process control system and is designed to receive from the control system control data B for an impedance matching circuit B. The first transformation device is designed to transform the control data B for the impedance matching circuit B into control data A for the impedance matching circuit A. The transformation system is designed to provide the control data A for controlling the impedance matching circuit A. Alternatively or in addition, the transformation system is designed to receive information data A from the impedance matching circuit A.

A kind of plating experiment device and method for preparing high bonding force copper plating layer on aluminum-based heat sink surface, it relates to material processing technical field.Plasma chamber is provided with heater, motion control mechanism can carry out public self-rotating compound motion and is connected bias power supply, evaporation source includes crucible, electron gun, deflection coil and ion source, so that the inside of plasmaplasma chamber forms pure strong current ion flushing area and strong current ion enhanced electron beam evaporation plating area, vacuum and gas supply system connects plasmaplasma chamber and carries out vacuumizing, and respectively with plasmaplasma chamber and ion source connection supply reaction gas and working gas.By the spatial partition layout of plasmaplasma chamber cooperation motion control mechanism public self-rotating compound motion, workpiece is periodically alternated through two functional areas in film forming process, utilizes the ion beam mixing effect of high-energy ion to realize film densification and eliminate interface stress, ensure the bonding force and reliability of the deposited copper plating layer, multiple workpieces can be simultaneously loaded to improve production efficiency.

A plasma generator by means of a resonant waveguide is disclosed. The plasma generator comprises: an annular or elliptical central waveguide that includes a plurality of slots on the inner side surface thereof; a first incident waveguide that is tangentially connected to the central waveguide to enable electromagnetic wave communication; an electromagnetic wave supply unit that transmits electromagnetic waves to the incident waveguide; and a plasma chamber that has an electromagnetic wave incident window which is positioned on an outlet side of the slots to seal the inside of the central waveguide, and through which electromagnetic waves introduced through the slots may be radiated to the outside.

A method of performing a plasma process includes generating, at an output of a signal generator, a first RF signal at a first frequency. The signal generator is coupled to a plasma chamber through a matching circuit. Based on a feedback from the first RF signal, variable components of the matching circuit are moved to fixed positions. A second RF signal is generated at a second frequency at the output of the signal generator to ignite a plasma within the plasma chamber. In response to detecting the plasma, the signal generator switches to output a third RF signal at the first frequency to sustain the plasma, which is configured to process a substrate loaded into the plasma chamber while holding the matching circuit at the fixed positions.

A plasma processing system is disclosed. A very high frequency (VHF) generator delivers power to a plasma chamber, and a mid-frequency (MF) generator delivers power to the plasma chamber. The VHF generator includes a sensor configured to provide a signal indicative of an impedance of a plasma load that is presented to the VHF generator. The VHF generator further includes a frequency tuner configured to adjust a frequency of the VHF generator within a cycle of the MF generator based on the signal to mitigate impedance modulation caused by the MF generator. Impedance modulation may also be mitigated by a sync line between the VHF and MF generators that allows presetting the VHF generator frequency in synchronization with a cycle of the MF generator.

This invention belongs to the field of secondary battery cathode material recycling technology. More specifically, it relates to a plasma-sulfate combined method for recycling ternary battery cathode materials. The specific recycling method of this invention includes: immersing the cathode sheet in the solvent N-methylpyrrolidone, ultrasonically treating it to separate the active material layer on the cathode sheet surface from the current collector aluminum foil, sieving to remove the separated current collector aluminum foil, obtaining the cathode material; transferring the cathode material into a microwave reactor, heating it to 450-500℃ in a nitrogen atmosphere, holding the temperature for 10-20 minutes, cooling, and discharging to obtain pyrolysis material; transferring the pyrolysis material to a plasma chamber, using a reducing gas as plasma, and plasma treating it for 20-30 minutes under conditions of a gas pressure of 50-60 Pa and a radio frequency power of 480-550 W to obtain reduced material; using a compound acid leaching solution as the leaching solution, mixing it with the reduced material, and acid leaching for 45-80 minutes to obtain the leaching solution.

The embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for plasma processing a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to improving process uniformity across a surface of a substrate, reducing the defect rate of the surface of the substrate, or both. In some embodiments, the apparatus and methods provide improved control over the uniformity of the plasma formed on the edge of the substrate and / or the distribution of ion energy at the surface of the substrate. The improved plasma uniformity control can be used in combination with substrate handling methods, e.g., dechucking methods, to reduce particulate-related defects on the substrate surface. In some embodiments, the improved control of plasma uniformity is used to preferentially clean accumulated processing by-products from a portion of an edge ring during an in-situ plasma chamber cleaning process.

A microwave plasma chemical vapour deposition (CVD) reactor 1 for manufacturing synthetic diamond material comprises a microwave generator 8, a plasma chamber 2, a microwave coupling configuration 12

A system for directing a main beam towards a gap within a plasma chamber is provided. The system includes an edge ring and a plurality of antenna elements coupled to the edge ring. The plurality of antenna elements includes a first antenna element and a second antenna element. The first antenna element receives a radio frequency (RF) signal having a phase and the second antenna element receives a phase-shifted signal. The phase-shifted signal has a phase that is shifted with respect to the phase of the RF signal to output the main beam towards the gap within the plasma chamber.

In one embodiment, a system for controlling a matching network of a semiconductor manufacturing system is disclosed. The matching network includes electronically variable reactance elements (EVREs) that use different matching configurations to vary their total reactance. A plasma chamber performs a process on a substrate, the process including a processing step including at least a first processing step and a second processing step. For each processing step, the memory stores instructions for executing the processing step. The control circuit changes the matching configuration to a new matching configuration based on an instruction for performing a second processing step while each processing step of the process is continuously performed while the plasma chamber is expected to transition from the first processing step to the second processing step.

The utility model relates to a graphene preparation device. The graphene preparation device comprises a plasma chamber, a solid-state carbon source chamber and a reaction chamber which are communicated in sequence, the plasma chamber is configured to obtain a high-temperature heat source by utilizing plasma, and the solid-state carbon source chamber is configured to gasify a solid-state carbon source into a gaseous-state carbon source by utilizing a plasma technology. When the graphene preparation device is used for preparing graphene, carrier gas enters the plasma chamber and is heated to obtain high-temperature carrier gas; high-temperature carrier gas passes through a solid carbon source chamber filled with a solid carbon source, and the solid carbon source is gasified into a gaseous carbon source with adjustable components; and the gaseous carbon source and the catalyst react in the reaction chamber to generate graphene. The plasma is high in controllability of energy output, wide in temperature controllable range, capable of generating charged particles and activating the solid carbon source, and the advantages of effectively improving adjustability, stability, high activity, low cost, low risk and the like of the carbon source are achieved by combining water vapor vaporization and hydration reaction.

An ion implanter that includes an ion source to generate an ion beam, a platen disposed in a process chamber to support a workpiece that is treated with the ion beam, and a plasma flood gun that results in fewer particles in the process chamber is disclosed. The plasma flood gun includes at least one plasma chamber, each having at least one aperture through which low energy ions and electrons are emitted. A sweeper is located near the aperture, positioned so as to be between the aperture and the upstream components. The sweeper is heated using resistive elements or a halogen lamp so as to elevate its temperature, which limited the amount of deposition that occurs on the sweeper.

A system for pulsing a top low frequency (LF) radio frequency (RF) generator is described. The system includes a main LF RF generator that generates a first RF signal and is coupled to a lower electrode of a plasma chamber. The top LF RF generator generates a second RF signal and is coupled to a top electrode of the plasma chamber. The system includes a waveform controller coupled to the main LF RF generator and the top LF RF generator. The waveform controller receives a pulse repetition rate and a first duty cycle of the first RF signal, controls the top LF RF generator to apply the pulse repetition rate to the second RF signal, and controls the top LF RF generator to have a second duty cycle that is greater than the first duty cycle.

A method for etching in plasma processing in a plasma chamber, including continually rotating between a first etch cycle and a second etch cycle for a period of time to etch a feature in a masked substrate. The method including performing the first etch cycle on the masked substrate using a first etching chemistry for a first sub-period. The first etch cycle is continually rotated between a first state configured for passivation, a second state, and third state configured for etching the masked substrate. During the second state of the first etch cycle, a first tuning step is performed by tuning the first etching chemistry, a high frequency RF power and a low frequency RF power to provide extended passivation to the feature in the masked substrate. The method including performing the second etch cycle on the masked substrate using a second etching chemistry for a second sub-period. The second etch cycle is continually rotated between the first state configured for electrical discharge, a fourth state, and the third state configured for etching the feature in the masked substrate. During the fourth state of the second etch cycle, a second tuning step is performed by tuning the second etching chemistry, the high frequency RF power, and the low frequency RF power to provide punch-through etching to the feature in the masked substrate.

The present disclosure relates to plasma dicing of wafer. More specifically, the present disclosure is directed to frame masks and methods for plasma dicing wafers utilizing frame masks. The frame mask includes a mask frame, wherein the mask frame includes a top ring mask support and a side ring mask support. A plurality of mask segments suspended from the top ring mask support by segment supports, the mask segments are configured to define dicing channels on a blank wafer. The frame mask is configured to removably sit onto a frame lift assembly in a plasma chamber of a plasma dicing tool, when fitted onto the frame lift assembly, the mask segments are disposed above a wafer on a wafer ring frame for plasma dicing. The mask frame is configured to enable flow of plasma therethrough to the wafer to etch the wafer to form dicing channels defined by the mask segments.

An example plasma monitoring apparatus includes a monitoring structure fixed to a sidewall of a plasma chamber housing such that the monitoring structure is in contact with a viewport located in the sidewall of the plasma chamber housing, a cylindrical lens provided inside the monitoring structure and located at a front end of the monitoring structure, the cylindrical lens configured to receive a plurality of rays of plasma emission light emitted from a plasma space of interest inside the plasma chamber housing, and a plasma detector provided inside the monitoring structure and located at a rear end of the monitoring structure, the plasma detector configured to detect the plurality of rays of plasma emission light transmitted through the cylindrical lens. The cylindrical lens includes a side surface in a form of a circumferential surface convex or concave in a second horizontal direction.

Systems and methods for plasma processing of a semiconductor workpiece are provided. In one example, a plasma processing system includes a plasma chamber. The plasma processing system includes an inductive coil disposed about the plasma chamber. The plasma processing system includes a processing chamber downstream of the plasma chamber. The plasma processing system includes a workpiece support in the processing chamber. The plasma processing system includes a component with a coating in the processing chamber, the plasma chamber, or between the processing chamber and the plasma chamber.

1. Name of the product in this design: The main body of the carrier ring with substrate support assembly for a plasma chamber. 2. Application of this design: This product is used as a whole in semiconductor manufacturing equipment, and in part in the plasma chamber of semiconductor manufacturing equipment as a carrier ring with substrate support components. 3. The key design feature of this product is its shape. 4. The picture or photo that best illustrates the key design points: Design 1 combined state 3D diagram. 5. Design 1 is designated as the basic design. 6. Other situations requiring explanation: Component 1 is the carrier ring, and component 2 is the substrate support component for the carrier ring. The combined state corresponds to installing 3 substrate support components in the carrier ring; the dotted lines in the figure represent the parts that do not require protection.

A plasma processing system is disclosed. A very high frequency (VHF) generator delivers power to a plasma chamber, and a mid-frequency (MF) generator delivers power to the plasma chamber. The VHF generator includes a sensor configured to provide a signal indicative of an impedance of a plasma load that is presented to the VHF generator. The VHF generator further includes a frequency tuner configured to adjust a frequency of the VHF generator within a cycle of the MF generator based on the signal to mitigate impedance modulation caused by the MF generator. Impedance modulation may also be mitigated by a sync line between the VHF and MF generators that allows presetting the VHF generator frequency in synchronization with a cycle of the MF generator.

Apparatus and method for plasma etching an additive-containing aluminium nitride film containing an additive element selected from scandium (Sc), yttrium (Y) or erbium (Er) by placing a workpiece upon a substrate support within a plasma chamber, the workpiece including a substrate having a metal film disposed thereon, an additive-containing aluminium nitride film deposited on the metal film, and a mask disposed upon the additive-containing aluminium nitride film which defines at least one trench, introducing BCl3 gas into the chamber with a BCl3 flow rate in sccm, introducing H2 gas into the chamber with a H2 flow rate in sccm, introducing an inert diluent gas into the chamber with an inert diluent gas flow rate in sccm, and establishing a plasma within the chamber to plasma etch the additive-containing aluminium nitride film exposed within the trench.

A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.