642 results about "Plasma chamber" patented technology

A method for real-time, multi-parameter monitoring of fluid quality, comprising the steps of: transiently transforming a continuous stream of the fluid into non-thermal plasma using at least one dielectric barrier discharge plasma chamber; subjecting the liquid to a pressure drop, generating a biphasic liquid-gas stream; continuously ionizing the biphasic liquid-gas stream through a controlled electric field, produced by at least one dielectric barrier electrode; channeling at least one molecular or atomic emission toward a spectrum analysis module; detecting the at least one molecular or atomic emission through the spectrum analysis module; and analyzing the at least one molecular or atomic emission through the spectrum analysis module.

An impedance match housing is described. The impedance match housing includes an impedance matching circuit having an input that is coupled to a radio frequency (RF) generator. The impedance matching circuit has an output that is coupled to a first RF strap. The impedance match housing includes a uniformity control circuit coupled in parallel to a portion of the first RF strap to modify uniformity in a processing rate of a substrate when the substrate is processed within a plasma chamber.

A system having the low frequency RF generator is described. The low frequency RF has an operating frequency range between 10 kilohertz (kHz) and 330 kHz. The low frequency RF generator generates an RF signal. The system further includes an impedance matching circuit coupled to the low frequency RF generator for receiving the RF signal. The impedance matching circuit modifies an impedance of the RF signal to output a modified RF signal. The system includes a plasma chamber coupled to the RF generator for receiving the modified RF signal. The plasma chamber includes a chuck having a dielectric layer and a base metal layer. The dielectric layer is located on top of the base metal layer. The dielectric layer has a bottom surface, and the base metal layer has a top surface. The base metal layer has a porous plug and the bottom surface of the dielectric layer has a portion that is in contact with the porous plug.

A plasma chamber for a UV light source includes a plasma generation region that defines a plasma confinement region. A port is positioned adjacent to a side of the plasma generation region that allows generated light to pass out of the chamber. A high voltage region is coupled to the plasma generation region. A grounded region is coupled to the high voltage region that defines an outer surface configured to be coupled to the ground and is dimensioned for receiving a surrounding inductive core. A width of the high voltage region is greater than the width of the grounded region.

An ion beam etching apparatus comprising a plasma chamber, a plasma source disposed on top of the plasma chamber and configured to generate plasma, a process chamber defining a treating area where a substrate is treated, a grid structure disposed between the process chamber and the plasma chamber, wherein the grid structure receives the plasma, and supplies ions or radicals toward the substrate, a discharge line connected to the grid structure, and a first pumping system connected to the discharge line, wherein particles or polymers within the grid structure are discharged through the discharge line.

In one embodiment, the present disclosure is directed to a system for providing improved electric field uniformity to a plasma chamber receiving multiple signal inputs. The system includes one or more dielectrics distributing received energy to one or more antennas. The one or more dielectrics have N receiving areas. N circular waveguides are positioned over the N receiving areas. Each of waveguides has a mode converter converting a received first transverse mode signal to a second transverse mode signal to be output by the circular waveguide to the corresponding receiving area. At least one phase adjuster circuit adjusts the phase of at least one of the first transverse mode signals such that adjacent circular waveguides have their received first transverse mode signals differ in phase by approximately 360 / N.

A method for generating plasma. The method including providing a plasma chamber configured for generating a plasma through inductive coupling, wherein the plasma chamber includes an electrostatic chuck (ESC) for supporting a substrate and a dielectric window disposed opposite the ESC. The method including supplying a first radio frequency (RE) power signal to an inner coil disposed over the dielectric window, wherein the first RE signal is operating at a first frequency. The method including supplying a mixed RE power signal to an outer coil disposed over the dielectric window, wherein the mixed RE power signal includes a first component delivering a second RE power signal operating at the first frequency and a second component delivering a third RE power signal operating at a second frequency, wherein the first frequency is greater than the second frequency.

A plasma chamber for a UV light source includes a plasma generation region that defines a plasma confinement region. A port is positioned adjacent to a side of the plasma generation region that allows generated light to pass out of the chamber. A high voltage region is coupled to the plasma generation region. A grounded region is coupled to the high voltage region that defines an outer surface configured to be coupled to the ground and is dimensioned for receiving a surrounding inductive core. A width of the high voltage region is greater than the width of the grounded region.

The invention relates to the technical field of light sources, particularly discloses a method and a device for adjusting the central position of a plasma, and aims to realize accurate positioning and stable control of the plasma by accurately controlling output parameters of a magnetic field generator. According to the method, a magnetic field generator with a specific shape and distribution is utilized, a magnetic field with a closed magnetic line structure is generated in a plasma chamber, charged particles in plasma are guided to move along a preset path, and it can be ensured that the plasma reaches and is kept at an expected position by monitoring and adjusting magnetic field parameters in real time.

A method for operating a plasma chamber to increase ion energy and decrease angular spread of ions during an etch operation is described. Method includes placing a substrate on an electrostatic chuck within the plasma chamber, wherein the electrostatic chuck is electrically coupled to a node. Method further includes forming a plasma in the plasma chamber, where the plasma produces a sheath with a first sheath voltage. The method further includes increasing the first sheath voltage to a second sheath voltage by applying a non-sinusoidal voltage at the electrostatic chuck and by applying a sinusoidal voltage at the electrostatic chuck, where a sum of the non-sinusoidal voltage and the sinusoidal voltage creates a voltage response on the electrostatic chuck that effectuates a change in a spread in ion energy at the wafer.

The invention relates to the field of microwave plasma processing equipment, in particular to microwave plasma chemical vapor deposition equipment. The microwave plasma chemical vapor deposition equipment comprises a furnace tube in which a plasma cavity is formed, and the formed plasma cavity comprises an upper short circuit plate, a side wall and a lower short circuit plate; a substrate cold water table group is arranged above the lower short circuit plate, and a wafer is placed at the upper end of the substrate cold water table group; an air disc is arranged on the outer side of the upper end of the wafer; according to the microwave plasma chemical vapor deposition equipment, the gas disc is arranged above the wafer placed in the plasma cavity, so that the consistency of the concentration and the uniform distribution of the raw material gas at the upper end of the wafer can be fully ensured, and the uniformity of the concentration and the thickness of a substance deposited in the later period is further ensured; and particularly, the concentration of the deposited substances at the edge of the wafer can be ensured to be consistent, so that the quality of the produced deposited substances is relatively high.

The invention relates to an atomic layer etching system and method for autonomously generating a process formula. The system is provided with a system digital twinning capable of autonomously generating process formula parameters and subsystem control parameters. The system based on digital twin drive can support accurate simulation, thereby realizing efficient and highly adaptive semiconductor processing. In some embodiments, a system controller may utilize system digital twinning to generate a process recipe based on an optimization program of a predefined cost function. A novel approach is presented herein that provides an initial estimate by utilizing a large number of simulation application cases accumulated for a long term in the background. The concept of the invention can be widely applied to any type of etching and deposition process system using the vacuum plasma chamber.

An edge ring for use in a plasma chamber includes a first pair of edge ring segments with each one of the first pair of edge ring segments having a first thickness and a second pair of edge ring segments with each one of the second pair of edge ring segments having a second thickness. Each of the first pair of edge ring segments is oriented adjacent to each of the second pair of edge ring segments and each of the second pair of edge ring segments is oriented adjacent to each of the first pair of edge ring segments.

A method for plasma processing a substrate, where the method includes generating a plasma in a plasma chamber within which the substrate is held during processing, where generating the plasma includes: flowing a discharge gas through the plasma chamber; coupling a radio frequency (RF) source signal to a first RF electrode, where the coupling ionizes the discharge gas; and coupling a bias signal to a second RF electrode, the bias signal being a periodic series of bias pulses, each period having a bias-ON time and a bias-OFF time, where a bias voltage waveform is applied during the bias-ON time; generating a pulsed DC magnetic field in the plasma chamber, by coupling a magnetizing signal to an electromagnet, the magnetizing signal being a periodic series of current pulses; and prior to coupling the magnetizing signal, synchronizing the periodic series of current pulses with the bias signal to flow a DC magnetizing current during the bias-ON time.

Embodiments of the invention include a plasma system. The plasma system includes a plasma chamber; an RF driver configured to drive bursts into the plasma chamber with an RF frequency; a nanosecond pulser configured to drive pulses into the plasma chamber with a pulse repetition frequency, the pulse repetition frequency being less than the RF frequency; a high pass filter disposed between the RF driver and the plasma chamber; and a low pass filter disposed between the nanosecond pulser and the plasma chamber.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

The utility model discloses a microwave plasma spray gun for an ion implanter. The microwave plasma spray gun comprises a microwave generator, a waveguide assembly, a plasma chamber, a working gas supply device, a medium tube and a conducting rod, wherein the open end of the dielectric tube is arranged outside the plasma chamber and connected to the waveguide assembly, and the closed end of the dielectric tube is arranged inside the plasma chamber; the conducting rod is hollow and is coaxially arranged in the inner cavity of the dielectric tube, the first end of the conducting rod extends to the open end of the dielectric tube, and the second end of the conducting rod extends to the closed end of the dielectric tube. According to the microwave plasma spray gun, metal pollution can be greatly reduced, electrons provided by the microwave plasma spray gun are uniformly distributed, and charge neutralization reaction can be better realized.

Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.

The present invention is directed towards an apparatus and method to detect electromagnetic radiation or signals emitted by plasma comprising a sensor unit, the sensing unit comprising a first sensor for detecting electromagnetic radiation or signals; an electromagnetic barrier wherein the electromagnetic barrier is configured to surround the first sensor to prevent ambient electromagnetic radiation reaching the first sensor; a first port through which electromagnetic radiation can pass, the port configured for coupling to a port of a plasma chamber such that electromagnetic radiation or signals emitted from the plasma can reach the first sensor; and a first output coupled with a balun and a dual coaxial system whereby a signal sensed is grounded and a phase reversed version of the signal is grounded. A signal acquisition system (SAS) for detecting electromagnetic radiation emitted by a plasma is also described.

The invention relates to a plasma process supply system (100), in particular for pulsed plasma processes, comprising an RF generator (2) which has at least one amplifier circuit (30), an impedance matching circuit (3), and a control device (1). The plasma process supply system (100) can be connected to a plasma chamber (4). The RF generator (2) is connected to the impedance matching circuit (3), the impedance matching circuit (3) being designed to set a target impedance (10) as an input impedance for the RF generator (2). The control device (1) is designed to set the target impedance (10) such that a trajectory (40), which describes an impedance curve for the input impedance in a settling period (41), runs from a starting impedance region (42) through an ignition impedance region (43) to a target impedance region (44), the RF generator (2) delivering, in the ignition impedance region (43), a power level which is higher than a target power level in the subsequent target impedance region (44).

A system for mounting the shield ring to the pedestal in a plasma chamber is disclosed. The mounting system includes compliant hardware. A fastener with a compliant component, such as an O-ring, is first secured to the pedestal. The shield ring has a top surface, a bottom surface and walls extending downward from the inner and outer diameter of the shield ring. Bores are located on the bottom surface of the shield ring. The bores of the shield ring are aligned with the fasteners and the shield ring is then pressed down onto the fasteners. As the shield ring is being pressed down, the walls of the bores force the compliant hardware to yield. When in place, the compliant hardware supplies the requisite compression force to hold the shield ring in place. The compliant hardware may be implemented in various manners.

According to an embodiment, a plasma processing system includes a plasma chamber, an RF source, a matching circuit, a balun, and a resonating antenna. The resonating antenna includes a first and a second spiral resonant antenna (SRA), each having an electrical length corresponding to a quarter of a wavelength of a frequency of a forward RF wave generated by the RF source. The first end of the first SRA is coupled to a first balanced terminal of the balun and the second end of the first SRA is open circuit. The first end of the second SRA is coupled to a second balanced terminal of the balun and the second end of the second SRA is open circuit. The first and the second SRA are arranged in a symmetrically nested configuration having a same center point.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

Apparatus and process for the continuous production of carbon black or carbon containing compounds. The process is performed by converting a carbon containing feedstock, including generating a plasma gas with electrical energy, accelerating the plasma gas through a nozzle, whose diameter is narrowing in the direction of the plasma gas, guiding the plasma gas into a reaction area where feedstock is injected under conditions generated by aerodynamic and electromagnetic forces, including intense rapid mixing between the plasma gas and feedstock occurs. There is no significant recirculation of feedstock into the plasma chamber, and the reaction zone does not immediately come into contact with any contact surfaces. The products of reaction are cooled, and the carbon black or carbon containing compounds are separated from the other reaction products.

Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

A film forming apparatus (100) is provided with a chamber (1), a mounting table (21), and a fluid head (3). The fluid head (3) is provided inside the chamber (1) at a position facing the first main surface of the substrate (W) placed on the placement table (21). The fluid head (3) has a plasma chamber (4b), a plasma source (5), a plurality of first outlets (4c), a gas flow path (6b), and a plurality of second outlets (6c). A plasma source (5) converts a first raw material gas into plasma in a plasma chamber (4b). The first outflow ports (4c) are two-dimensionally dispersed and arranged in an overlapping region that overlaps the first main surface of the substrate (W) in plan view. Active species derived from the first raw material gas flow out from the first outlet (4c) toward the first main surface of the substrate (W). The plurality of second outlets (6c) are two-dimensionally dispersed and arranged at positions different from those of the plurality of first outlets (4c) in the overlapping region. The second source gas flows out from the plurality of second outlets (6c) toward the first main surface of the substrate (W).

A pulse generator is disclosed. The pulse generator includes a DC source; a plurality of switches, a transformer; and a pulsing output. The pulse generator can be coupled with a plasma chamber. The pulsing output outputs high voltage pulses having a peak-to-peak voltage greater than 1 kV and a voltage portion between consecutive high voltage bipolar pulses that has a negative slope that substantially offsets the voltage reduction on a wafer within a plasma chamber due to an ion current. The resulting voltage at the wafer may be substantially flat between consecutive pulses.

A processing system. The processing system may include a plasma chamber to generate a plasma; an extraction system, to extract an ion beam from the plasma chamber and deliver the ion beam to a substrate position, external to the plasma chamber; and an in-situ beam metrology system, having at least one detector to image the ion beam in imaging region that extends between the plasma chamber and the substrate position.

A plasma chamber includes: a housing having a seating part on which a wafer is seated; a first swirl motion side gas feed that is provided on the side surface of the housing and injects gas into the housing; and a second swirl motion side gas feed that is provided on the side surface of the housing and injects gas into the housing, wherein the first swirl motion side gas feed and the second swirl motion side gas feed inject gas along the wall surface of the housing, the first swirl motion side gas feed injects gas on a plane extending in a direction parallel to a plane formed by the seating part, and the second swirl motion side gas feed injects gas while forming an angle with respect to the plane extending in the direction parallel to the plane formed by the seating part.

In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit is coupled between a plasma chamber and an RF source. The matching circuit includes a first electronically variable capacitor (EVC) having a first variable capacitance, a terminal of the first EVC being operably coupled to the RF input, and a second EVC having a second variable capacitance, a terminal of the second EVC being operably coupled to the RF output. A control circuit determines, based on a first parameter, a first capacitance value for the first EVC and a second capacitance value for the second EVC. The control circuit then generates a control signal to alter the first and second variable capacitances accordingly. The alteration of the capacitances, while the frequency of the RF source is not altered, causes RF power reflected back to the RF source to decrease.