338 results about "Plasma chamber" patented technology

A system having the low frequency RF generator is described. The low frequency RF has an operating frequency range between 10 kilohertz (kHz) and 330 kHz. The low frequency RF generator generates an RF signal. The system further includes an impedance matching circuit coupled to the low frequency RF generator for receiving the RF signal. The impedance matching circuit modifies an impedance of the RF signal to output a modified RF signal. The system includes a plasma chamber coupled to the RF generator for receiving the modified RF signal. The plasma chamber includes a chuck having a dielectric layer and a base metal layer. The dielectric layer is located on top of the base metal layer. The dielectric layer has a bottom surface, and the base metal layer has a top surface. The base metal layer has a porous plug and the bottom surface of the dielectric layer has a portion that is in contact with the porous plug.

The invention relates to the technical field of light sources, particularly discloses a method and a device for adjusting the central position of a plasma, and aims to realize accurate positioning and stable control of the plasma by accurately controlling output parameters of a magnetic field generator. According to the method, a magnetic field generator with a specific shape and distribution is utilized, a magnetic field with a closed magnetic line structure is generated in a plasma chamber, charged particles in plasma are guided to move along a preset path, and it can be ensured that the plasma reaches and is kept at an expected position by monitoring and adjusting magnetic field parameters in real time.

The invention relates to an atomic layer etching system and method for autonomously generating a process formula. The system is provided with a system digital twinning capable of autonomously generating process formula parameters and subsystem control parameters. The system based on digital twin drive can support accurate simulation, thereby realizing efficient and highly adaptive semiconductor processing. In some embodiments, a system controller may utilize system digital twinning to generate a process recipe based on an optimization program of a predefined cost function. A novel approach is presented herein that provides an initial estimate by utilizing a large number of simulation application cases accumulated for a long term in the background. The concept of the invention can be widely applied to any type of etching and deposition process system using the vacuum plasma chamber.

Embodiments of the invention include a plasma system. The plasma system includes a plasma chamber; an RF driver configured to drive bursts into the plasma chamber with an RF frequency; a nanosecond pulser configured to drive pulses into the plasma chamber with a pulse repetition frequency, the pulse repetition frequency being less than the RF frequency; a high pass filter disposed between the RF driver and the plasma chamber; and a low pass filter disposed between the nanosecond pulser and the plasma chamber.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

A system for mounting the shield ring to the pedestal in a plasma chamber is disclosed. The mounting system includes compliant hardware. A fastener with a compliant component, such as an O-ring, is first secured to the pedestal. The shield ring has a top surface, a bottom surface and walls extending downward from the inner and outer diameter of the shield ring. Bores are located on the bottom surface of the shield ring. The bores of the shield ring are aligned with the fasteners and the shield ring is then pressed down onto the fasteners. As the shield ring is being pressed down, the walls of the bores force the compliant hardware to yield. When in place, the compliant hardware supplies the requisite compression force to hold the shield ring in place. The compliant hardware may be implemented in various manners.

According to an embodiment, a plasma processing system includes a plasma chamber, an RF source, a matching circuit, a balun, and a resonating antenna. The resonating antenna includes a first and a second spiral resonant antenna (SRA), each having an electrical length corresponding to a quarter of a wavelength of a frequency of a forward RF wave generated by the RF source. The first end of the first SRA is coupled to a first balanced terminal of the balun and the second end of the first SRA is open circuit. The first end of the second SRA is coupled to a second balanced terminal of the balun and the second end of the second SRA is open circuit. The first and the second SRA are arranged in a symmetrically nested configuration having a same center point.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

A pulse generator is disclosed. The pulse generator includes a DC source; a plurality of switches, a transformer; and a pulsing output. The pulse generator can be coupled with a plasma chamber. The pulsing output outputs high voltage pulses having a peak-to-peak voltage greater than 1 kV and a voltage portion between consecutive high voltage bipolar pulses that has a negative slope that substantially offsets the voltage reduction on a wafer within a plasma chamber due to an ion current. The resulting voltage at the wafer may be substantially flat between consecutive pulses.

A processing system. The processing system may include a plasma chamber to generate a plasma; an extraction system, to extract an ion beam from the plasma chamber and deliver the ion beam to a substrate position, external to the plasma chamber; and an in-situ beam metrology system, having at least one detector to image the ion beam in imaging region that extends between the plasma chamber and the substrate position.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

A pulse generator is disclosed. The pulse generator includes a DC source; a plurality of switches, a transformer; and a pulsing output. The pulse generator can be coupled with a plasma chamber. The pulsing output outputs high voltage pulses having a peak-to-peak voltage greater than 1 kV and a voltage portion between consecutive high voltage bipolar pulses that has a negative slope that substantially offsets the voltage reduction on a wafer within a plasma chamber due to an ion current. The resulting voltage at the wafer may be substantially flat between consecutive pulses.

In one embodiment, a system for controlling a matching network of a semiconductor manufacturing system is disclosed. The matching network comprises an electronically variable reactance element (EVRE) that varies its total reactance using different match configurations. A plasma chamber carries out a process upon a substrate, the process comprising process steps including at least a first process step and a second process step. A memory, for each process step, stores instructions for carrying out the process step. A control circuit, while continuously carrying out each of the process steps of the process, upon anticipation that the plasma chamber will be transitioning from the first process step to the second process step, alters the match configuration to a new match configuration based on the instructions for carrying out the second process step.

The invention relates to the field of semiconductor manufacturing, in particular to a plasma chamber and pre-cleaning equipment for physical vapor deposition, the plasma chamber comprises a vacuum chamber, a gas distribution module is arranged at the top of the vacuum chamber, a first door body is arranged on the front face of the vacuum chamber, a base is arranged in the vacuum chamber, and a second door body is arranged in the base. The base is provided with a clamp rapid switching assembly. According to the overturning device, the overturning objective table is unlocked and locked by arranging the clamp rapid switching assembly and matching of a male buckle and a female buckle, then a clamping base conforming to the shape of a workpiece can be rapidly overturned to the top, the compatibility of the device to different workpieces is improved, secondly, a telescopic rod of a first telescopic cylinder stretches out and draws back to drive a lifting table to ascend and descend, and the clamping base can be rapidly overturned to the top; and the lifting platform can be lifted to a safe height when the clamps are switched, so that the overturning objective table is prevented from colliding with other parts when being overturned. The pre-cleaning equipment for physical vapor deposition provided by the invention comprises the plasma chamber provided by the invention.

A method for controlling particle growth in a processing chamber is disclosed herein. The method includes performing at least one plasma deposition process in a chamber using a precursor to form a layer on a substrate. The method also includes providing power to the chamber during the at least one plasma deposition process, and monitoring at least one criterion to determine when at least one plasma purge is to be performed. The method further includes performing at least one plasma purge by applying a gas into the chamber in response to at least one criterion indicating that the at least one plasma purge is to be performed.

According to an embodiment, a plasma chamber having a substrate holder, a ring assembly, and a fiber optic cable is proposed. The substrate holder having a top surface and a bottom surface. The top surface of the substrate holder is configured to hold a substrate for plasma processing. The ring assembly includes a focus ring horizontally surrounding the substrate. The focus ring includes a cavity arranged in a vertical direction from the bottom surface of the substrate holder to the top surface of the substrate holder. The fiber optic cable is fed through the cavity. The fiber optic cable having an endpoint configured to collect light emitted by plasma to determine its species density as well as atomic or ionic composition.

A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.

Systems and methods for pulsing radio frequency (RF) coils are described. One of the methods includes supplying a first RF signal to a first impedance matching circuit coupled to a first RF coil, supplying a second RF signal to a second impedance matching circuit coupled to a second RF coil, and pulsing the first RF signal between a first parameter level and a second parameter level. The method includes pulsing the second RF signal between a third parameter level and a fourth parameter level in reverse synchronization with the pulsing of the first RF signal.

A semiconductor processing system with improved plasma density is disclosed. The system includes a plasma chamber having a base, chamber walls and a top wall. An antenna is used to generate RF energy that is inductively coupled into the plasma chamber. The antenna comprises a plurality of coils that are proximate a dielectric window. One or more RF blockers are disposed adjacent to the dielectric window to block some of the RF energy from entering the plasma chamber. If the RF blocker is placed near a region of high plasma density, the density in that region may be reduced, improving the uniformity of the plasma density within the plasma chamber. Further, the RF blockers may have openings and may also be overlapped to create varying degrees of blocking.

According to an embodiment, a plasma processing system is proposed. The plasma processing system includes a plasma chamber; an RF source configured to generate a forward RF wave; an impedance matching circuit coupled to the RF source, the impedance matching circuit configured to provide matching for the RF source; a balun having unbalanced terminals coupled to the impedance matching circuit; and a resonant antenna configured to generate plasma within the plasma chamber, the resonant antenna being a spiral resonant antenna with an electrical length corresponding to a half-wavelength of a frequency of the forward RF wave, the resonant antenna comprising: a first tap along the spiral resonant antenna coupled to a first balanced terminal of the balun and a second tap along the spiral resonant antenna coupled to a second balanced terminal of the balun.

The plasma chamber includes a chamber body having a processing region therein, a liner disposed on the chamber body and surrounding the processing region, a substrate support disposed within the liner, a magnet assembly having a plurality of magnets disposed around the liner, and a magnetic material shield disposed around the liner, the magnetic material shield enclosing the processing region near the substrate support.

A substrate processing apparatus with plasma control capabilities is disclosed. The apparatus comprises, a radio frequency (RF) source, a plasma chamber, and a plasma control system comprising: an impedance matching network comprising a first variable impedance matching device and a second variable impedance matching device; and a control circuit configured to: determine a first parameter of the first variable impedance matching device and a second parameter of the second variable impedance matching device, and a reflected RF power value (Pr) reflected back to the RF source, determine a matching point (MP) where the Pr is a specific value (P0), determine a plurality of matching edge points representing an edge RF power value (PE) that is greater than P0 by a predetermined margin (PM) based on the MP, wherein PE=P0+PM, and determine at least one of a size and a center location of an impedance matching area.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Embodiments of the present disclosure provide a system for fast impedance tuning. The system includes a radio frequency (RF) generator to generate power, a plasma chamber to receive the power from the RF generator and a RF matching network inserted between the RF generator and the plasma chamber configured to match a plasma load impedance to a RF generator impedance using a solid state based variable capacitor. The RF matching network includes a bias circuit that applies a reverse bias to the solid state based variable capacitor to control a capacitance value of the solid state based variable capacitor. The plasma load impedance is matched with the RF generator impedance when pulsed voltage, multi-level pulsing, or RF match ignition tuning is applied.

The invention discloses a low-temperature plasma modified efficient hydrogen evolution catalyst. The method comprises the following steps: preparing a nano core-shell structure catalyst with uniform size through liquid-phase synthesis and layer-by-layer self-assembly, and introducing vacancies, defects and other unsaturated active sites on the surface of the nano core-shell structure catalyst; and then nitrogen and the like are used as a reaction atmosphere of a plasma chamber, and the surface of the catalyst is treated through a low-temperature plasma technology for catalyst performance regulation and control. The method has the advantages of simple process, low energy consumption, no need of adding extra chemical reagents, environmental friendliness and the like, and has a good application prospect. The preparation and regulation method of the electrocatalyst can be suitable for application of an electrocatalytic efficient hydrogen evolution catalyst. The material regulated and controlled by the plasma has higher current density and lower overpotential in hydrogen evolution reaction, and shows more excellent electrocatalytic activity and stability.

The invention relates to a sample analysis system. The sample analysis system is provided with a lens demisting device. The sample analysis system includes a plasma torch device (200) including a body defining a plasma chamber (202) and a plasma torch (201) supported by the body in the plasma chamber (202). The plasma torch (201) is electrically coupled to a power source and is operable to form a plasma from the sample fluid in the plasma chamber (202) when energized. The sample analysis system also includes a spectrometer (300) configured to analyze the plasma to measure an analyte of interest in the sample fluid by light emitted by the plasma. The spectrometer (300) comprises a collector tube (301) in visual communication with the plasma chamber (202), the collector tube (301) comprising a proximal end and a distal end, the distal end being equipped with a lens (302) configured to collect light emitted by the plasma. The light collecting tube (301) is at least partially inserted into the central passage (616) of the gas hood (610) such that the distal end of the light collecting tube (301) with the lens (302) is at least partially enclosed by the gas hood (610). A distal end (612) of the gas hood (610) includes a gas outlet port (619) and a gas inlet port (618) fluidly coupled with a source of pressurized gas, the gas hood configured to discharge a stream of gas across an exposed surface of the lens (302) to at least minimize fogging of the lens (302).

New substantially single-phase polycrystalline materials are disclosed. The new substantially single-phase polycrystalline materials generally include from 0.01-20 mol. % zirconia, at least 80 mol. % of one or more rare earth oxides (REO), and 40 to 7000 ppm aluminum by weight, wherein the substantially single-phase polycrystalline material comprises at least 95 wt. % of a solid-solution of REO-zirconia as measured by x-ray diffraction. The new substantially single-phase polycrystalline materials may realize a high density, such as a density of at least 95% of theoretical density, or higher. The new substantially single-phase polycrystalline materials may be in the form of a semiconductor component, including those suited for use in a plasma chamber environment.

A transformation system for connecting a plasma process control system to an impedance matching circuit A, the impedance matching circuit A being connectable to an RF generator and a plasma chamber and including a first transformation device and a communication device. The communication device is connectable to the plasma process control system and is designed to receive from the control system control data B for an impedance matching circuit B. The first transformation device is designed to transform the control data B for the impedance matching circuit B into control data A for the impedance matching circuit A. The transformation system is designed to provide the control data A for controlling the impedance matching circuit A. Alternatively or in addition, the transformation system is designed to receive information data A from the impedance matching circuit A.

A kind of plating experiment device and method for preparing high bonding force copper plating layer on aluminum-based heat sink surface, it relates to material processing technical field.Plasma chamber is provided with heater, motion control mechanism can carry out public self-rotating compound motion and is connected bias power supply, evaporation source includes crucible, electron gun, deflection coil and ion source, so that the inside of plasmaplasma chamber forms pure strong current ion flushing area and strong current ion enhanced electron beam evaporation plating area, vacuum and gas supply system connects plasmaplasma chamber and carries out vacuumizing, and respectively with plasmaplasma chamber and ion source connection supply reaction gas and working gas.By the spatial partition layout of plasmaplasma chamber cooperation motion control mechanism public self-rotating compound motion, workpiece is periodically alternated through two functional areas in film forming process, utilizes the ion beam mixing effect of high-energy ion to realize film densification and eliminate interface stress, ensure the bonding force and reliability of the deposited copper plating layer, multiple workpieces can be simultaneously loaded to improve production efficiency.

A system includes a pulsed direct current (DC) source. The pulsed DC source generates a DC voltage signal. The system includes an inductor-capacitor (LC) circuit coupled to the pulsed DC source to receive the DC voltage signal to output a square waveform voltage. The system further includes a high frequency (HF) radio frequency (RF) generator that generates an RF waveform. The system includes an impedance matching circuit coupled to the HF RF generator to receive the RF waveform to output a modified RF waveform. The LC circuit is coupled to the impedance matching circuit at a point to combine the modified RF waveform with the square waveform voltage. The modified RF waveform is combined with the square waveform voltage to output a modified square waveform voltage. The system includes a plasma chamber coupled to the point to receive the modified square waveform voltage.