247 results about "Plasma chamber" patented technology

The invention relates to the technical field of light sources, particularly discloses a method and a device for adjusting the central position of a plasma, and aims to realize accurate positioning and stable control of the plasma by accurately controlling output parameters of a magnetic field generator. According to the method, a magnetic field generator with a specific shape and distribution is utilized, a magnetic field with a closed magnetic line structure is generated in a plasma chamber, charged particles in plasma are guided to move along a preset path, and it can be ensured that the plasma reaches and is kept at an expected position by monitoring and adjusting magnetic field parameters in real time.

The invention relates to an atomic layer etching system and method for autonomously generating a process formula. The system is provided with a system digital twinning capable of autonomously generating process formula parameters and subsystem control parameters. The system based on digital twin drive can support accurate simulation, thereby realizing efficient and highly adaptive semiconductor processing. In some embodiments, a system controller may utilize system digital twinning to generate a process recipe based on an optimization program of a predefined cost function. A novel approach is presented herein that provides an initial estimate by utilizing a large number of simulation application cases accumulated for a long term in the background. The concept of the invention can be widely applied to any type of etching and deposition process system using the vacuum plasma chamber.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

A pulse generator is disclosed. The pulse generator includes a DC source; a plurality of switches, a transformer; and a pulsing output. The pulse generator can be coupled with a plasma chamber. The pulsing output outputs high voltage pulses having a peak-to-peak voltage greater than 1 kV and a voltage portion between consecutive high voltage bipolar pulses that has a negative slope that substantially offsets the voltage reduction on a wafer within a plasma chamber due to an ion current. The resulting voltage at the wafer may be substantially flat between consecutive pulses.

A processing system. The processing system may include a plasma chamber to generate a plasma; an extraction system, to extract an ion beam from the plasma chamber and deliver the ion beam to a substrate position, external to the plasma chamber; and an in-situ beam metrology system, having at least one detector to image the ion beam in imaging region that extends between the plasma chamber and the substrate position.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

In one embodiment, a system for controlling a matching network of a semiconductor manufacturing system is disclosed. The matching network comprises an electronically variable reactance element (EVRE) that varies its total reactance using different match configurations. A plasma chamber carries out a process upon a substrate, the process comprising process steps including at least a first process step and a second process step. A memory, for each process step, stores instructions for carrying out the process step. A control circuit, while continuously carrying out each of the process steps of the process, upon anticipation that the plasma chamber will be transitioning from the first process step to the second process step, alters the match configuration to a new match configuration based on the instructions for carrying out the second process step.

A method for controlling particle growth in a processing chamber is disclosed herein. The method includes performing at least one plasma deposition process in a chamber using a precursor to form a layer on a substrate. The method also includes providing power to the chamber during the at least one plasma deposition process, and monitoring at least one criterion to determine when at least one plasma purge is to be performed. The method further includes performing at least one plasma purge by applying a gas into the chamber in response to at least one criterion indicating that the at least one plasma purge is to be performed.

A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.

Systems and methods for pulsing radio frequency (RF) coils are described. One of the methods includes supplying a first RF signal to a first impedance matching circuit coupled to a first RF coil, supplying a second RF signal to a second impedance matching circuit coupled to a second RF coil, and pulsing the first RF signal between a first parameter level and a second parameter level. The method includes pulsing the second RF signal between a third parameter level and a fourth parameter level in reverse synchronization with the pulsing of the first RF signal.

The plasma chamber includes a chamber body having a processing region therein, a liner disposed on the chamber body and surrounding the processing region, a substrate support disposed within the liner, a magnet assembly having a plurality of magnets disposed around the liner, and a magnetic material shield disposed around the liner, the magnetic material shield enclosing the processing region near the substrate support.

A substrate processing apparatus with plasma control capabilities is disclosed. The apparatus comprises, a radio frequency (RF) source, a plasma chamber, and a plasma control system comprising: an impedance matching network comprising a first variable impedance matching device and a second variable impedance matching device; and a control circuit configured to: determine a first parameter of the first variable impedance matching device and a second parameter of the second variable impedance matching device, and a reflected RF power value (Pr) reflected back to the RF source, determine a matching point (MP) where the Pr is a specific value (P0), determine a plurality of matching edge points representing an edge RF power value (PE) that is greater than P0 by a predetermined margin (PM) based on the MP, wherein PE=P0+PM, and determine at least one of a size and a center location of an impedance matching area.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

The invention discloses a low-temperature plasma modified efficient hydrogen evolution catalyst. The method comprises the following steps: preparing a nano core-shell structure catalyst with uniform size through liquid-phase synthesis and layer-by-layer self-assembly, and introducing vacancies, defects and other unsaturated active sites on the surface of the nano core-shell structure catalyst; and then nitrogen and the like are used as a reaction atmosphere of a plasma chamber, and the surface of the catalyst is treated through a low-temperature plasma technology for catalyst performance regulation and control. The method has the advantages of simple process, low energy consumption, no need of adding extra chemical reagents, environmental friendliness and the like, and has a good application prospect. The preparation and regulation method of the electrocatalyst can be suitable for application of an electrocatalytic efficient hydrogen evolution catalyst. The material regulated and controlled by the plasma has higher current density and lower overpotential in hydrogen evolution reaction, and shows more excellent electrocatalytic activity and stability.

The invention relates to a sample analysis system. The sample analysis system is provided with a lens demisting device. The sample analysis system includes a plasma torch device (200) including a body defining a plasma chamber (202) and a plasma torch (201) supported by the body in the plasma chamber (202). The plasma torch (201) is electrically coupled to a power source and is operable to form a plasma from the sample fluid in the plasma chamber (202) when energized. The sample analysis system also includes a spectrometer (300) configured to analyze the plasma to measure an analyte of interest in the sample fluid by light emitted by the plasma. The spectrometer (300) comprises a collector tube (301) in visual communication with the plasma chamber (202), the collector tube (301) comprising a proximal end and a distal end, the distal end being equipped with a lens (302) configured to collect light emitted by the plasma. The light collecting tube (301) is at least partially inserted into the central passage (616) of the gas hood (610) such that the distal end of the light collecting tube (301) with the lens (302) is at least partially enclosed by the gas hood (610). A distal end (612) of the gas hood (610) includes a gas outlet port (619) and a gas inlet port (618) fluidly coupled with a source of pressurized gas, the gas hood configured to discharge a stream of gas across an exposed surface of the lens (302) to at least minimize fogging of the lens (302).

New substantially single-phase polycrystalline materials are disclosed. The new substantially single-phase polycrystalline materials generally include from 0.01-20 mol. % zirconia, at least 80 mol. % of one or more rare earth oxides (REO), and 40 to 7000 ppm aluminum by weight, wherein the substantially single-phase polycrystalline material comprises at least 95 wt. % of a solid-solution of REO-zirconia as measured by x-ray diffraction. The new substantially single-phase polycrystalline materials may realize a high density, such as a density of at least 95% of theoretical density, or higher. The new substantially single-phase polycrystalline materials may be in the form of a semiconductor component, including those suited for use in a plasma chamber environment.

A transformation system for connecting a plasma process control system to an impedance matching circuit A, the impedance matching circuit A being connectable to an RF generator and a plasma chamber and including a first transformation device and a communication device. The communication device is connectable to the plasma process control system and is designed to receive from the control system control data B for an impedance matching circuit B. The first transformation device is designed to transform the control data B for the impedance matching circuit B into control data A for the impedance matching circuit A. The transformation system is designed to provide the control data A for controlling the impedance matching circuit A. Alternatively or in addition, the transformation system is designed to receive information data A from the impedance matching circuit A.

A kind of plating experiment device and method for preparing high bonding force copper plating layer on aluminum-based heat sink surface, it relates to material processing technical field.Plasma chamber is provided with heater, motion control mechanism can carry out public self-rotating compound motion and is connected bias power supply, evaporation source includes crucible, electron gun, deflection coil and ion source, so that the inside of plasmaplasma chamber forms pure strong current ion flushing area and strong current ion enhanced electron beam evaporation plating area, vacuum and gas supply system connects plasmaplasma chamber and carries out vacuumizing, and respectively with plasmaplasma chamber and ion source connection supply reaction gas and working gas.By the spatial partition layout of plasmaplasma chamber cooperation motion control mechanism public self-rotating compound motion, workpiece is periodically alternated through two functional areas in film forming process, utilizes the ion beam mixing effect of high-energy ion to realize film densification and eliminate interface stress, ensure the bonding force and reliability of the deposited copper plating layer, multiple workpieces can be simultaneously loaded to improve production efficiency.

A system includes a pulsed direct current (DC) source. The pulsed DC source generates a DC voltage signal. The system includes an inductor-capacitor (LC) circuit coupled to the pulsed DC source to receive the DC voltage signal to output a square waveform voltage. The system further includes a high frequency (HF) radio frequency (RF) generator that generates an RF waveform. The system includes an impedance matching circuit coupled to the HF RF generator to receive the RF waveform to output a modified RF waveform. The LC circuit is coupled to the impedance matching circuit at a point to combine the modified RF waveform with the square waveform voltage. The modified RF waveform is combined with the square waveform voltage to output a modified square waveform voltage. The system includes a plasma chamber coupled to the point to receive the modified square waveform voltage.

A plasma generator by means of a resonant waveguide is disclosed. The plasma generator comprises: an annular or elliptical central waveguide that includes a plurality of slots on the inner side surface thereof; a first incident waveguide that is tangentially connected to the central waveguide to enable electromagnetic wave communication; an electromagnetic wave supply unit that transmits electromagnetic waves to the incident waveguide; and a plasma chamber that has an electromagnetic wave incident window which is positioned on an outlet side of the slots to seal the inside of the central waveguide, and through which electromagnetic waves introduced through the slots may be radiated to the outside.

A method of performing a plasma process includes generating, at an output of a signal generator, a first RF signal at a first frequency. The signal generator is coupled to a plasma chamber through a matching circuit. Based on a feedback from the first RF signal, variable components of the matching circuit are moved to fixed positions. A second RF signal is generated at a second frequency at the output of the signal generator to ignite a plasma within the plasma chamber. In response to detecting the plasma, the signal generator switches to output a third RF signal at the first frequency to sustain the plasma, which is configured to process a substrate loaded into the plasma chamber while holding the matching circuit at the fixed positions.

The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate may include: a process treatment unit that provides a treatment space in which the substrate is treated; and a plasma generation unit that is provided above the process treatment unit and generates plasma from a process gas. The plasma generation unit includes: a plasma chamber having an electric discharge space formed therein; a shield unit surrounding the exterior of the plasma chamber; an antenna which surrounds the shield unit from the outside of the shield unit and to which high-frequency power is applied; and a connecting unit electrically connecting the shield unit and the antenna.

A plasma processing system is disclosed. A very high frequency (VHF) generator delivers power to a plasma chamber, and a mid-frequency (MF) generator delivers power to the plasma chamber. The VHF generator includes a sensor configured to provide a signal indicative of an impedance of a plasma load that is presented to the VHF generator. The VHF generator further includes a frequency tuner configured to adjust a frequency of the VHF generator within a cycle of the MF generator based on the signal to mitigate impedance modulation caused by the MF generator. Impedance modulation may also be mitigated by a sync line between the VHF and MF generators that allows presetting the VHF generator frequency in synchronization with a cycle of the MF generator.

This invention discloses a magnetron sputtering device and preparation method specifically for perovskite solar cells, relating to the field of solar cell manufacturing technology. The device includes a first chamber, a second chamber, a third chamber, a fourth chamber, a fifth chamber, a sixth chamber, a seventh chamber, and an eighth chamber. Through the provided vertical rotating magnetron sputtering coating pilot line, a full-process magnetron sputtering preparation method is used to prepare all-inorganic perovskite solar cells. It can also provide services for organic perovskite solar cells and inorganic-organic hybrid perovskite solar cells. By designing a novel plasma chamber and co-sputtering coating chamber layout, along with a matching transmission system and power system, a continuous magnetron sputtering coating process can be achieved, greatly simplifying the preparation process, reducing preparation costs, effectively reducing the area required, improving production efficiency, and simplifying the equipment complexity of the coating production line.

This invention belongs to the field of secondary battery cathode material recycling technology. More specifically, it relates to a plasma-sulfate combined method for recycling ternary battery cathode materials. The specific recycling method of this invention includes: immersing the cathode sheet in the solvent N-methylpyrrolidone, ultrasonically treating it to separate the active material layer on the cathode sheet surface from the current collector aluminum foil, sieving to remove the separated current collector aluminum foil, obtaining the cathode material; transferring the cathode material into a microwave reactor, heating it to 450-500℃ in a nitrogen atmosphere, holding the temperature for 10-20 minutes, cooling, and discharging to obtain pyrolysis material; transferring the pyrolysis material to a plasma chamber, using a reducing gas as plasma, and plasma treating it for 20-30 minutes under conditions of a gas pressure of 50-60 Pa and a radio frequency power of 480-550 W to obtain reduced material; using a compound acid leaching solution as the leaching solution, mixing it with the reduced material, and acid leaching for 45-80 minutes to obtain the leaching solution.

In one embodiment, the present disclosure is directed to a system for providing improved electric field uniformity to a plasma chamber receiving multiple signal inputs. The system includes one or more dielectrics distributing received energy to one or more antennas. The one or more dielectrics have N receiving areas. N circular waveguides are positioned over the N receiving areas. Each of waveguides has a mode converter converting a received first transverse mode signal to a second transverse mode signal to be output by the circular waveguide to the corresponding receiving area. At least one phase adjuster circuit adjusts the phase of at least one of the first transverse mode signals such that adjacent circular waveguides have their received first transverse mode signals differ in phase by approximately 360 / N.

The embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for plasma processing a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to improving process uniformity across a surface of a substrate, reducing the defect rate of the surface of the substrate, or both. In some embodiments, the apparatus and methods provide improved control over the uniformity of the plasma formed on the edge of the substrate and / or the distribution of ion energy at the surface of the substrate. The improved plasma uniformity control can be used in combination with substrate handling methods, e.g., dechucking methods, to reduce particulate-related defects on the substrate surface. In some embodiments, the improved control of plasma uniformity is used to preferentially clean accumulated processing by-products from a portion of an edge ring during an in-situ plasma chamber cleaning process.

The present disclosure describes systems and methods for controlling the electrical generation of nitric oxide. In some aspects, a system for generating nitric oxide comprises a plasma chamber housing two or more electrodes in communication with a resonant high voltage circuit configured to send a signal to the plasma chamber for generating nitric oxide in a product gas from a flow of a reactant gas, and a controller configured to generate a pulse width modulation signal having multiple harmonic frequencies to excite the resonant high voltage circuit. The controller is configured to adjust the duty cycle of the pulse width modulation signal, the controller selecting the duty cycle based on a target voltage before plasma formation and a target current after plasma formation in the plasma chamber.

To provide a system and method for securing an edge ring to a support ring within a plasma chamber.SOLUTION: An edge ring is secured to a support ring via a plurality of fasteners 122 inserted into the bottom surface of an edge ring. The edge ring during processing of the substrate within the plasma chamber is stabilized by securing the edge ring to the support ring. In addition, since the support ring is fixed to the insulator ring connected to the insulator wall of the plasma chamber, the edge ring is secured to the plasma chamber by securing the edge ring to the support ring. Additionally, the support ring and edge ring are pulled down vertically using one or more clasp mechanisms during processing of the substrate, and are also pushed up vertically using a clasp mechanism to remove the edge ring and the support ring from the plasma chamber.SELECTED DRAWING: Figure 8D

The utility model discloses drawer type conduit vacuum plasma equipment, and belongs to the technical field of conduit vacuum plasma treatment. The vacuum plasma chamber comprises a vacuum plasma chamber body, a bracket placing groove is formed in the top of the vacuum plasma chamber body, fixing blocks are symmetrically and fixedly connected to the inner wall of the bracket placing groove, and sliding grooves are symmetrically formed in the inner walls of the fixing blocks. According to the utility model, the vacuum plasma chamber main body, the fixed block, the chute, the bracket support, the vacuum door, the sliding fixed strip, the linear guide rail, the guide rail sliding block and the handle are matched, and a drawer type door opening and closing structure is adopted, so that when the vacuum door is drawn out, the bracket support in the vacuum plasma chamber main body can be drawn out along with the vacuum door; compared with the prior art, time for drawing the bracket for the second time is shortened, more manpower is saved, the linear guide rail set is used at the drawing connecting position, the whole action is more labor-saving, and operation by a single operator is more convenient.