8results about How to "Improve spatial uniformity" patented technology

The invention discloses an unmanned aerial vehicle group control crop density adaptive patrol method based on fractal geometric analysis. The method comprises the following steps: S1, collecting ground crop density distribution information image data; s2, performing preliminary classification on the density region according to the fractal dimension information; s3, the high-density area, the medium-density area and the low-density area are processed; s4, generating a multi-scale distribution information graph of crop density; s5, the unmanned aerial vehicle group control system distributes patrol tasks and flight paths of all the unmanned aerial vehicles according to density data of the multi-scale distribution information graph, and a self-adaptive patrol system adjusts flight parameters according to the distributed tasks; s6, in the patrol process of the unmanned aerial vehicle, executing the steps S1 to S5 circularly; s7, performing multi-scale fractal geometric analysis on the image data of each region after patrol is completed; and S8, in the multilevel crop density analysis report, identifying and marking an abnormal density region. According to the invention, the patrol efficiency, the data precision and the system collaboration are obviously improved.

The utility model relates to a kind of LED epitaxial structures, comprising: substrate;N type layer;Active layer is located on N type;P type layer, located on active layer;Wherein, the P type layer includes P type window layer, P type window layer includes several first laminated structure, each first laminated structure includes the GaInP layer, first GaP layer and second GaP layer of sequentially laminated, the P type doping concentration of second GaP layer in each first laminated structure is greater than the P type doping concentration of first GaP layer.The GaInP layer of the utility model has higher band gap, plays the role of optical window layer, can reduce light absorption loss;GaP has lower band gap, first GaP layer and second GaP layer play the role of buffer layer / transition layer, so the combination of GaInP layer, first GaP layer and second GaP layer realizes the balance of band matching and carrier transport efficiency, conducive to the efficient extension of current.

This application relates to the field of two-dimensional semiconductor material preparation technology, specifically to a method for preparing monolayer molybdenum disulfide by dual-sulfur source chemical vapor deposition, comprising the following steps: Step 1, providing a chemical vapor deposition reaction chamber having an upstream region, a growth region, and a downstream region; Step 2, arranging a molybdenum-containing precursor in the growth region, and arranging a substrate above or opposite to the molybdenum-containing precursor; Step 3, arranging a first sulfur-containing precursor in the upstream region and a second sulfur-containing precursor in the downstream region; Step 4, introducing a carrier gas into the reaction chamber and heating it to cause the first sulfur-containing precursor, the second sulfur-containing precursor, and the molybdenum-containing precursor to volatilize and undergo a chemical vapor deposition reaction on the substrate surface to form a monolayer molybdenum disulfide. This invention employs a dual-sulfur source strategy, achieving large-size, uniform, and low-defect preparation of monolayer MoS2, facilitating widespread application.

The application provides a front ring gas supply device for an ion thruster discharge chamber, comprising a gas supply ring groove and a gas supply ring cover, the gas supply ring groove and the gas supply ring cover cooperate to form a cavity, the cavity comprises a first cavity and a second cavity, a plurality of through holes are arranged on the gas supply ring cover, the first cavity and the second cavity are communicated through the through holes, the first cavity is communicated with a gas supply pipeline, and the second cavity is communicated with a discharge chamber cavity. By adopting the two-stage cavity buffer gas supply mode, the distribution of the working gas in the ion thruster discharge chamber is more uniform, the spatial uniformity of the plasma density in the ion thruster is improved, and then the flatness of the extracted ion beam is improved, which is beneficial to prolonging the service life of the ion thruster; by adopting the oblique gas injection mode, the axial velocity of the gas is reduced, the residence time of the working gas in the ion thruster discharge chamber is prolonged, and the working gas utilization rate of the ion thruster is improved.

This utility model relates to an antenna ring for a microwave plasma deposition apparatus, comprising a ring body located between a resonant waveguide cavity and a reaction chamber, and an annular mounting bracket and a pressure ring that mate with an aluminum ring. The ring body is a conductive and corrosion-resistant metal structure, with its circumferentially continuous mesh satisfying the following: mesh diameter 0.5–6 mm (preferably 1–5 mm), aperture ratio 40%–80%, wire diameter 0.05–1.0 mm (preferably 0.1–0.8 mm), and mesh shape circular or polygonal. The ring body is held between the annular mounting bracket and the aluminum ring by the pressure ring and electrically connected to the cavity; a solid metal reflective strip (a hole-free area, 3–20 mm wide) is provided on the outer edge of the ring to enhance microwave reflection and field shaping; the axial distance between the ring and the quartz isolation plate is 2–20 mm. This structure achieves multi-point microwave radiation, uniform reflection, and Faraday shielding, and is easy to disassemble, maintain, and reliably grounded, making it suitable for large-area thin-film deposition equipment with substrates ≥8 inches.

The present invention provides a river water level jump monitoring method that can be used for artificial rivers, obtains radar remote sensing data images, establishes a circular buffer zone to extract radar backscatter coefficient data, and establishes a radar backscatter coefficient variation data set; uses GPM precipitation data to interpolate radar backscatter coefficient variation data and obtain radar backscatter coefficient variation and precipitation data sets with continuous time series characteristics; based on the obtained high-time resolution radar backscatter coefficient variation data, interpolated precipitation data, and the established ten-level water level labels, uses the SVM algorithm to establish a river water level jump classification discrimination model; subsequently, variables such as radar backscatter coefficients at any time are obtained and input into the trained model, so that the river water level fluctuation level and early warning information can be obtained in real time. The present invention can solve the problems of limited data sources, low temporal and spatial resolution, and difficulty in discrimination in artificial river water level monitoring and early warning research.

This invention discloses a sowing method for improving the uniformity of light forage seed dispersal, relating to the field of intelligent agricultural sowing technology. The method includes: S1, obtaining soil moisture weight and temperature influence factor data for the target plot from a preset database; constructing an initial distribution map by integrating soil moisture boundaries and temperature distribution differences; calibrating the data according to regional crop characteristics to determine the basic influence parameters of seed drift within the plot; S2, based on the basic influence parameters of seed drift, combined with terrain undulation constraints and drift influence gradients, dividing the plot into regions; and adjusting the regional overlap ratio through boundary dynamic correction technology to obtain a preliminary zoning layout. This sowing method for improving the uniformity of light forage seed dispersal significantly enhances the accuracy and efficiency of large-area grassland sowing operations and is suitable for high-precision forage planting scenarios such as degraded grassland restoration and ecological engineering construction.

The invention discloses a manufacturing method of a gallium nitride substrate, which comprises the following steps: sequentially and alternately growing N first low-temperature gallium nitride layers and N second high-temperature gallium nitride layers on a gallium nitride template from bottom to top to form a first epitaxial layer, the first low-temperature gallium nitride layers are silicon-doped gallium nitride films growing in a low-temperature range, and the second high-temperature gallium nitride layers are silicon-doped gallium nitride films growing in a low-temperature range; the second high-temperature gallium nitride layer is a non-doped gallium nitride film growing in a high-temperature range; stripping the growth substrate of the gallium nitride template; the first epitaxial layer is electrochemically etched, and each first low-temperature gallium nitride layer is etched to form a hole structure, so that the first epitaxial layer is etched to form a porous gallium nitride thick film; and sequentially growing a third low-temperature gallium nitride layer and a doped fourth high-temperature gallium nitride layer on the uppermost second high-temperature gallium nitride layer to form the non-porous gallium nitride thick film. According to the homogeneous gallium nitride substrate provided by the invention, the negative warping caused by the temperature difference between the upper surface and the lower surface of the growth substrate is reduced. The invention further discloses a manufacturing method of the semiconductor device and the gallium nitride substrate.