5results about How to "Improve spatial uniformity" patented technology

The utility model relates to a kind of LED epitaxial structures, comprising: substrate;N type layer;Active layer is located on N type;P type layer, located on active layer;Wherein, the P type layer includes P type window layer, P type window layer includes several first laminated structure, each first laminated structure includes the GaInP layer, first GaP layer and second GaP layer of sequentially laminated, the P type doping concentration of second GaP layer in each first laminated structure is greater than the P type doping concentration of first GaP layer.The GaInP layer of the utility model has higher band gap, plays the role of optical window layer, can reduce light absorption loss;GaP has lower band gap, first GaP layer and second GaP layer play the role of buffer layer / transition layer, so the combination of GaInP layer, first GaP layer and second GaP layer realizes the balance of band matching and carrier transport efficiency, conducive to the efficient extension of current.

This application relates to the field of two-dimensional semiconductor material preparation technology, specifically to a method for preparing monolayer molybdenum disulfide by dual-sulfur source chemical vapor deposition, comprising the following steps: Step 1, providing a chemical vapor deposition reaction chamber having an upstream region, a growth region, and a downstream region; Step 2, arranging a molybdenum-containing precursor in the growth region, and arranging a substrate above or opposite to the molybdenum-containing precursor; Step 3, arranging a first sulfur-containing precursor in the upstream region and a second sulfur-containing precursor in the downstream region; Step 4, introducing a carrier gas into the reaction chamber and heating it to cause the first sulfur-containing precursor, the second sulfur-containing precursor, and the molybdenum-containing precursor to volatilize and undergo a chemical vapor deposition reaction on the substrate surface to form a monolayer molybdenum disulfide. This invention employs a dual-sulfur source strategy, achieving large-size, uniform, and low-defect preparation of monolayer MoS2, facilitating widespread application.

The application provides a front ring gas supply device for an ion thruster discharge chamber, comprising a gas supply ring groove and a gas supply ring cover, the gas supply ring groove and the gas supply ring cover cooperate to form a cavity, the cavity comprises a first cavity and a second cavity, a plurality of through holes are arranged on the gas supply ring cover, the first cavity and the second cavity are communicated through the through holes, the first cavity is communicated with a gas supply pipeline, and the second cavity is communicated with a discharge chamber cavity. By adopting the two-stage cavity buffer gas supply mode, the distribution of the working gas in the ion thruster discharge chamber is more uniform, the spatial uniformity of the plasma density in the ion thruster is improved, and then the flatness of the extracted ion beam is improved, which is beneficial to prolonging the service life of the ion thruster; by adopting the oblique gas injection mode, the axial velocity of the gas is reduced, the residence time of the working gas in the ion thruster discharge chamber is prolonged, and the working gas utilization rate of the ion thruster is improved.

This utility model relates to an antenna ring for a microwave plasma deposition apparatus, comprising a ring body located between a resonant waveguide cavity and a reaction chamber, and an annular mounting bracket and a pressure ring that mate with an aluminum ring. The ring body is a conductive and corrosion-resistant metal structure, with its circumferentially continuous mesh satisfying the following: mesh diameter 0.5–6 mm (preferably 1–5 mm), aperture ratio 40%–80%, wire diameter 0.05–1.0 mm (preferably 0.1–0.8 mm), and mesh shape circular or polygonal. The ring body is held between the annular mounting bracket and the aluminum ring by the pressure ring and electrically connected to the cavity; a solid metal reflective strip (a hole-free area, 3–20 mm wide) is provided on the outer edge of the ring to enhance microwave reflection and field shaping; the axial distance between the ring and the quartz isolation plate is 2–20 mm. This structure achieves multi-point microwave radiation, uniform reflection, and Faraday shielding, and is easy to disassemble, maintain, and reliably grounded, making it suitable for large-area thin-film deposition equipment with substrates ≥8 inches.

This invention discloses a sowing method for improving the uniformity of light forage seed dispersal, relating to the field of intelligent agricultural sowing technology. The method includes: S1, obtaining soil moisture weight and temperature influence factor data for the target plot from a preset database; constructing an initial distribution map by integrating soil moisture boundaries and temperature distribution differences; calibrating the data according to regional crop characteristics to determine the basic influence parameters of seed drift within the plot; S2, based on the basic influence parameters of seed drift, combined with terrain undulation constraints and drift influence gradients, dividing the plot into regions; and adjusting the regional overlap ratio through boundary dynamic correction technology to obtain a preliminary zoning layout. This sowing method for improving the uniformity of light forage seed dispersal significantly enhances the accuracy and efficiency of large-area grassland sowing operations and is suitable for high-precision forage planting scenarios such as degraded grassland restoration and ecological engineering construction.