39 results about "Pulsed DC" patented technology

This invention relates to the field of thin film technology, specifically disclosing a method and a thin film for preparing single-crystal TiN thin films based on pulsed DC magnetron sputtering. The method includes: placing a substrate into the sputtering chamber of a magnetron sputtering apparatus, evacuating and heating it to 400°C; introducing an activation gas and performing initial magnetron sputtering on a titanium target at a sputtering threshold to form an adhesion-promoting layer on the substrate surface; turning off the activation gas and then introducing a reactive sputtering gas into the sputtering chamber; then performing high-intensity sputtering while simultaneously turning on a bias power supply, wherein the bias power supply is a synchronous pulse power supply that is inversely phase to the pulsed DC power supply; turning off the pulsed DC power supply and the introduction of nitrogen in the reactive sputtering gas, and continuing magnetron sputtering on the substrate; cycling 2-4 times to cool to room temperature to obtain a single-crystal TiN thin film. In this application, the substrate temperature is only 400°C during deposition, thus reducing energy consumption and shortening the time during subsequent cooling. The titanium nitride thin film prepared in this application exhibits a high sputtering deposition rate and high crystal quality.

The embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for plasma processing a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to improving process uniformity across a surface of a substrate, reducing the defect rate of the surface of the substrate, or both. In some embodiments, the apparatus and methods provide improved control over the uniformity of the plasma formed on the edge of the substrate and / or the distribution of ion energy at the surface of the substrate. The improved plasma uniformity control can be used in combination with substrate handling methods, e.g., dechucking methods, to reduce particulate-related defects on the substrate surface. In some embodiments, the improved control of plasma uniformity is used to preferentially clean accumulated processing by-products from a portion of an edge ring during an in-situ plasma chamber cleaning process.

The present disclosure relates to methods, devices and systems for exposing microorganisms or compositions comprising functional proteins to an oscillating electric field substantially free of a magnetic component in order to improve stress responses, survival and metabolite or protein production. In embodiments, a controller drives one or more insulated emitters with a true AC signal or pulsed DC signal, in stepped, swept or shuffled patterns of an electric field oscillating at one or more frequencies in the range 210 Hz to 99 kHz. Exposure to the field provides surmounting energy that enhances protein breathing, catalysis, and fundamental functions of multiprotein complexes including transcription factors and ribosomes, thereby improving stress resistance of microorganisms, their viability during fermentation, drying, storage, transport, and / or increasing production of functional or therapeutic proteins, metabolites or microbial lysates. The technology is applicable to manufacture of probiotics, therapeutics, metabolites, food, alcohol, feed and bioenergy, cosmetics, nutraceuticals and biopharmaceuticals..

The invention relates to a manufacturing method of a high-strength metal ceramic alloy, which comprises the following steps: S1, preparing TiO2-Ni-Co-Mo-Cr composite oxide core-shell structure precursor powder through a sol-gel method by taking nano TiO2 powder as a ceramic phase precursor core layer raw material and soluble metal salt as a binding phase precursor shell layer raw material; s2, uniformly mixing the precursor powder with nano carbon black, and carrying out low-temperature pre-nitridation reduction reaction; s3, after the composite powder is granulated, dry pressing preforming is combined with cold isostatic pressing treatment; and S4, degreasing the biscuit, placing the biscuit in a high-pressure sintering furnace in a nitrogen atmosphere, and applying pulse direct current to assist sintering. According to the preparation method, TiN phase synthesis and densification sintering are completely decoupled, low-temperature pre-nitridation is used for completing complete conversion from TiO2 to TiN, a metal binding phase is obtained through synchronous reduction, and a TiN metal core-shell structure is completely reserved; and densification is realized through subsequent low-temperature sintering, so that the problem of abnormal growth of TiN crystal grains caused by superposition of reaction heat release and sintering high temperature in the prior art is effectively avoided.

A power supply system comprises a main circuit, a sampling circuit, a driving circuit and a controller, wherein: the power conversion circuit in the main circuit comprises an LLC resonant conversion circuit; the sampling circuit is electrically connected with part of the circuit in the main circuit, and is used for sampling information of input signals, resonant capacitor signals and output signals of the main circuit; the controller is electrically connected with the sampling circuit and the driving circuit, and is used for controlling the driving circuit based on the information sampled by the sampling circuit, so that the driving circuit drives the LLC resonant conversion circuit to realize active power factor correction, electrical isolation and voltage conversion; wherein the control strategy of the controller makes the input voltage of the LLC resonant conversion circuit be pulse direct current voltage or stable direct current voltage, and makes the LLC resonant conversion circuit work in a wide frequency range near the resonant frequency and far away from the resonant frequency. The power supply system reduces the number of power devices used, reduces the cost, reduces the volume, works in a soft switching state in all working conditions, and is conducive to high frequency.

A remote plasma processing system includes a plasma generator configured to generate plasma in an upper region of a processing chamber. A dual gas diffusing device is arranged between the upper region and a lower region of the processing chamber. The dual gas diffusing device is configured to supply metastable species and ions from the upper region to the lower region and a reactant gas to the lower region separately from the metastable species and ions. A substrate support is arranged in the lower region of the remote plasma processing system and includes a resistive heater. A first voltage source is configured to supply power to the resistive heater. A pulsed DC voltage source is configured to supply a pulsed DC bias to the resistive heater.

The present application relates to the field of ion implantation preparation of electrode materials, and particularly relates to a method for preparing hollow tubular lithium battery positive electrode materials based on ion implantation method, comprising the following steps: preparing lithium-containing metal-organic composite spinning solution, electrostatically spinning to prepare fiber membrane, processing periodic micropores on the surface of the fiber membrane through laser micropore array, controlling calcination through segmented temperature rise in air atmosphere, performing nano-channel etching and multilayer ion implantation after annealing by using ion implantation device, synchronously applying pulse direct current field, and performing surface functionalization modification on the material, wherein the present application adopts three-stage dynamic rotating ion implantation system, combines with pulse laser assisted opening technology, and realizes gradient element distribution and lattice directional growth of nanoscale thickness.

In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided at a predefined frequency, wherein the applying of the pulsed RF power to the process gas generates a plasma in the chamber; during the applying of the RF power, applying a pulsed DC current to a magnetic coil that is disposed over the chamber, wherein the pulsed DC current is provided at the predefined frequency.

The application belongs to the technical field of wastewater treatment, and particularly relates to a method for degrading gatifloxacin in wastewater based on a cathode micro-arc plasma electrolysis technology. The method comprises the following steps: placing the wastewater in an electrolysis reactor, using a titanium rod as a cathode, a platinum sheet as an anode, applying a pulse direct current voltage with a voltage of 320V to 360V and a frequency of 150Hz, forming a gas film on the surface of the cathode and initiating plasma micro-arc discharge, degrading the gatifloxacin in the wastewater by active substances generated by the discharge, and the treatment time being 8 minutes to 12 minutes; wherein the wastewater comprises wastewater containing gatifloxacin. The method provided by the application can achieve nearly complete removal of gatifloxacin in an aqueous solution within 8 minutes under the condition of 100mg·L ‑1 GAT, 340V, pH=7.8, 0.5mol·L ‑1 KCl, and has great potential in treating high-concentration medical wastewater.

An AlO x A method for preparing an Al2O3 low-reflection, etch-resistant composite coating includes the following steps: In a first chamber, the surface of a substrate is cleaned by ion bombardment; in a second chamber, argon and oxygen are introduced, and at least one layer of Al2O3 is deposited on the surface of the substrate using pulsed DC magnetron sputtering. x Layer; containing AlO x The substrate of the layer is fed into the third chamber, argon and oxygen are introduced, and AlO is sputtered using pulsed DC magnetron sputtering. x An Al2O3 layer is deposited on the surface of the layer and cooled in the furnace to obtain AlO. x - Al2O3 low-reflection, etching-resistant composite coating. This invention constructs a non-stoichiometric Al2O3 composite coating within the composite coating. x A gradient structure of oxygen content gradually transitioning from a layer to a dense Al2O3 layer, with low oxygen content AlO2O3. x The layer has a high oxygen vacancy concentration and low reflectivity, which can effectively reduce the reflection intensity in the ultraviolet-visible band. The dense Al2O3 layer formed on the surface has good structural stability and chemical inertness, thus significantly improving the etching resistance of the coating in the plasma etching environment.

An iontophoresis administration device includes: a power source, used to generate the pulsed direct current required to cause a medicinal agent to permeate an administration region of an organism, wherein the power source generates a forward pulsed direct current during a first time period and a reverse pulses direct current during a second period of time; a dielectric layer, configured to be in contact with the administration region, wherein the dielectric layer includes or has attached thereto an active agent that is to permeate the administration region via a pulsed direct current; and at least two electrodes, used to receive the pulsed direct current outputted by the power source, facilitating the provision of the received pulsed direct current to the dielectric layer. The iontophoresis administration device provided by the present disclosure not only increases the skin permeation rate, but is also not likely to irritate or harm the skin.

A system including a plasma chamber configured for generating plasma with a lower electrode located within an electrostatic chuck (ESC), and an upper electrode disposed above the lower electrode. The system includes an edge ring surrounding the lower electrode. A main power generator is electrically coupled to the lower electrode and the edge ring via a common node, and is configured to supply a pulsed direct current (DC) power signal to the common node. A variable capacitor is electrically coupled between the common node and the edge ring, wherein the variable capacitor splits the pulsed DC power signal into a bias power signal delivered to the lower electrode and a tunable edge sheath (TES) power signal delivered to the edge ring. A high frequency power source is electrically coupled to the upper electrode and configured to supply a high frequency radio frequency (RE) power signal to the upper electrode.

This invention relates to the field of photomask manufacturing technology and discloses a method for chromium plating using gradient-doped pulsed sputtering photomasks. The method includes cleaning and drying a glass substrate; activating it with an argon-oxygen mixed gas and a radio frequency plasma source to expose active broken bonds on the surface; moving the substrate to a chromium-silicon alloy target; activating a pulsed DC sputtering power supply; and performing a nitrogen linear gradient gas inlet program to deposit a gradient-doped transition layer, constructing a transition band that slowly releases lattice deformation energy; switching to a pure chromium target in situ; co-sponging the pulsed DC and RF power supplies with phase-synchronized triggering modulation to deposit a pure chromium functional layer; bombarding the film surface with a low-energy RF gas using an argon-nitrogen mixed gas; and initiating an in-situ isothermal annealing program for furnace cooling; finally, continuous polishing to obtain the finished product. This invention alleviates lattice mismatch and thermal stress by constructing a compositionally continuous transition band and using dual-power modulated sputtering, thereby improving interfacial adhesion and coating density.

This application discloses a power supply device, comprising: a rectifier circuit for rectifying alternating current into pulsed direct current; a spike suppression circuit comprising: an absorption resistor, the first end of which is electrically connected to the rectifier circuit; an isolating switch, the switching path of which is connected in parallel with the absorption resistor; a boost power factor correction circuit comprising: a boost converter unit comprising: a boost inductor, the second end of which is electrically connected to the absorption resistor; a power switch, one end of which is electrically connected to the boost inductor and the other end is grounded; a boost diode, one anode of which is electrically connected to the switching path of the power switch and the other anode of which is electrically connected to the boost inductor; an output capacitor, the positive terminal of which is electrically connected to the cathode of the boost diode and the negative terminal of which is grounded; and a control circuit electrically connected to the control terminal of the power switch; and also provides an air conditioning device; this application limits the sudden change of current through the spike suppression circuit, thereby playing a damping role, absorbing part of the spike energy, and preventing the PFC control loop from failing.

The utility model discloses a cable take -up frame initiative arm prevent downslide system, including brake power, brake power converts commercial power into pulse direct current, and brake power is connected with the motor of cable take -up frame, control module, control module controls the operation of motor, and before the rotation of control motor's rotor, control transformer's pulse direct current acts on the stator of motor, and the stator winding of pulse direct current that acts on the motor of cable take -up frame forms stationary electric field, the utility model discloses through setting brake power, adds direct current voltage at the motor stator both ends of cable take -up frame, makes the motor inside produce a stationary magnetic field, when the rotor of motor rotates, cuts the magnetic force line and produces induced current, and this current and stationary magnetic field interact and produce the braking torque opposite with the rotation direction of rotor, and the braking torque acts on the motor rotor, and through the torque amplification of reduction gearbox and acts on the screw rod, fundamentally solves the initiative arm downslide problem.

A method for plasma processing a substrate, where the method comprises generating a plasma in a plasma chamber in which the substrate is held during processing, where generating the plasma comprises: flowing a discharge gas through the plasma chamber; coupling a radio frequency (RF) source signal to the first RF electrode, where the coupling ionizes the discharge gas; and coupling a bias signal to the second RF electrode, the bias signal being a series of periodic bias pulses, each cycle having a bias on time during which a bias voltage waveform is applied and a bias off time; generating a pulsed DC magnetic field in the plasma chamber by coupling magnetization signals to an electromagnet, the magnetization signals being a series of periodic current pulses; and before coupling the magnetization signal, synchronizing the series of periodic current pulses with the bias signal to cause a DC magnetization current to flow during the bias on time.

This invention discloses a non-disassembly repair method for 10kV vacuum circuit breakers based on nanoscale electrical conduction optimization protection in the field of high-voltage electrical equipment inspection and maintenance technology. The method includes cleaning the vacuum bubble shell, preparing a carboxylic acid aluminum oxane silsesquioxane block copolymer dispersion, spraying the dispersion into the arc-extinguishing chamber via aerosol spraying, and then applying a pulsed DC electric field to induce the directional deposition of nanoparticles after settling. Subsequently, gradient vacuum-driven anchoring and solvent removal are performed, using infrared heating combined with gradient vacuum extraction to remove the solvent. Next, the contacts are closed and AC current is applied for low-temperature sintering bonding to form a quantum tunnel conductive layer. Finally, gradient aging treatment and comprehensive performance verification are performed. This invention can effectively repair arc erosion defects, reduce contact resistance, improve insulation performance and vacuum level, and achieve high-performance recovery of circuit breakers; the process is feasible.

The application discloses an electromagnetic pulse generating unit of a yacht forced stopping system, comprising a basket, a low-voltage control module, a medium-voltage energy storage module, a high-voltage output module and a cooling module. The basket comprises a chassis and a hanger, the low-voltage control module, the medium-voltage energy storage module and the high-voltage output module are all tower type boxes, are arranged along the circumferential side of the chassis, and the cooling module is arranged in the middle of the chassis. The low-voltage control module stabilizes voltage and reduces noise for external power supply, the medium-voltage energy storage module converts alternating current into direct current and modulates output pulse direct current, and the high-voltage output module further boosts voltage to output high-voltage pulses meeting field intensity requirements. The application has compact layout and high integration degree, can significantly reduce the volume and weight of the device, and improves the system mobility and working stability.

The invention discloses a preparation method, a preparation device and application of a hard alloy, and the preparation method comprises the following steps: placing an alloy raw material in an insulating mold, and carrying out pulse direct current sintering while applying pressure to obtain the hard alloy, the alloy raw materials comprise a hard phase raw material and a binding phase raw material; the hard phase raw material comprises at least one of WC, Ti (C, N), TiC, TaC or NbC; the binding phase raw material comprises at least one of Co, Fe, Ni or high-entropy alloy. A pulse direct current sintering method is utilized, an insulating mold is used for limiting current to directly flow through a powder sample, the whole powder sample can rapidly reach a uniform temperature field through Joule heat, second-level sintering is achieved, abnormal grain growth and a gradient structure caused by local overheating are reduced, grain growth is restrained, densification is promoted, and the yield is increased. And the preparation of the high-density nanocrystalline / ultra-fine grain hard alloy is realized.

A deposition tool includes a rotatable chuck and / or a pulsed direct current (DC) bias source. The pulsed DC source may be used to pulse a DC power in the processing chamber to achieve a lower electron temperature in the processing chamber, which enables the material from a material target to be directed toward the semiconductor substrate in a highly directional manner. This enables a low angle of deposition to be achieved for depositing the material, which enables the material to be evenly and symmetrically deposited onto sidewalls of recesses in the semiconductor substrate. Additionally and / or alternatively, the rotatable chuck may be used to rotate the semiconductor substrate during deposition of the layer onto the semiconductor substrate to compensate for nonuniformities in the deposition rate of the layer across the semiconductor substrate. This enables a high horizontal thickness uniformity across the semiconductor substrate.

This disclosure provides an iontophoresis drug delivery device. The iontophoresis drug delivery device includes: a power source for generating pulsed direct current required to penetrate a drug agent into a drug delivery area of ​​a biological organism, wherein the power source generates a positive pulsed direct current in a first time period and a reverse pulsed direct current in a second time period; a dielectric layer for contacting the drug delivery area, wherein the dielectric layer includes or has an active agent attached thereto, the active agent being used to penetrate into the drug delivery area via the pulsed direct current; and at least two electrodes for receiving the pulsed direct current output from the power source to provide the received pulsed direct current to the dielectric layer. The iontophoresis drug delivery device provided by this disclosure not only improves transdermal efficiency but also minimizes skin irritation or damage.

This invention belongs to the field of surface treatment technology, specifically relating to an anodizing electrolytic coloring method for aluminum alloy workpieces. The invention involves anodizing the aluminum alloy workpiece to obtain an oxide film on its surface; placing the anodized workpiece in an acidic pretreatment solution and applying AC voltage or pulsed DC voltage for pre-adjusted barrier layer treatment; then placing the pre-adjusted barrier layer workpiece in a metal salt coloring electrolyte and applying an asymmetric AC voltage for segmented coloring treatment; the segmented coloring treatment includes a low-voltage nucleation stage, a gradual deepening stage, and a constant-voltage color fixing stage. The anodizing electrolytic coloring method provided by this invention can effectively reduce the risk of blooming and burns, and improve coloring uniformity and batch consistency; it has significant engineering value for improving product quality and expanding the application range of the process.

Devices and methods are described for disinfection of pathogenic organisms using pulsed DC field electroporation. For example, this disclosure describes disinfection of pathogenic organisms using pulsed DC field electroporation for lung infection treatment, blood infection treatment, sterilization, and respirators.

A system (300) for plasma enhanced chemical vapor deposition, PECVD, comprising a plasma source (100, 200). The plasma source comprises at least a first hollow electrode (110a, 110b, 110c), the first hollow electrode (110a, 110b, 110c) being arranged to generate a hollow electrode plasma (111). The plasma source also 5 comprises a first supply means (112a, 112b, 112c) arranged to supply a plasma gas to the first hollow electrode (110a, 110b, 110c), a second supply means (141a, 141b) arranged to supply a precursor gas, a source biasing means (150) connected to the first hollow electrode (110a, 110b, 110c), and a target biasing means (130) arranged to be connectable to a conductive platform (120).

The application discloses a superconducting quantum computing multifunctional control circuit, comprising an FPGA logic module, an LDO power module and a superconducting quantum computing chip which are sequentially kept in communication connection; the FPGA logic module comprises an AWG waveform memory, an AWG waveform playing controller, a bypass SFDR cancellation module and an RFSoC digital-to-analog conversion module which are sequentially connected in communication along a signal transmission direction, wherein an output end of the RFSoC digital-to-analog conversion module is arranged as an output end of the FPGA logic module; the FPGA logic module further comprises a clock synchronization module, and the clock synchronization module inputs a clock signal to the RFSoC digital-to-analog conversion module; the XY microwave pulse, the DC Pulse pulse and the DC Offset direct current voltage are unified to generate in the same FPGA and RFSoC architecture, the bypass SFDR cancellation module is arranged to generate a cancellation signal which is opposite in phase to a stray component, and the superconducting quantum computing multifunctional control circuit has the advantages of significantly reducing the main stray component in an output channel and improving the purity of an effective signal.

The invention discloses a plasma processing device and a working method thereof, and the plasma processing device comprises a vacuum reaction chamber which is internally provided with a lower electrode assembly comprising a first electrode; the pulse direct-current power supply is connected with the first electrode and applies pulse voltage to the first electrode, the pulse period of the pulse voltage comprises a first stage and a second stage, the pulse direct-current power supply applies first voltage to the first electrode in the first stage and applies second voltage in the second stage, and when the first stage is converted into the second stage, the pulse voltage is applied to the first electrode; and the pulse direct-current power supply outputs a proper voltage waveform to reduce the jump voltage when the first stage is converted to the second stage, so that the potential difference of a plasma sheath on the surface of the grounding end is reduced. The device has the advantages that by reducing the jump voltage during the first-stage and second-stage conversion, the ion impact energy of the grounding end is reduced, and the maintenance period of the grounding end is prolonged.

The RF generator includes an RF power source. The RF power source outputs a time-varying signal to a load. At least one controller is coupled to the RF power source. At least one controller is configured to generate an impedance control signal to control the impedance between the RF power source and the load. At least one controller is further configured to generate an impedance control signal in response to a pulsed DC output signal from a second power source.

A kind of vehicle-mounted inverter monitoring and fault diagnosis system, including boost module, inverter module, MCU module;The MCU module is connected boost module, inverter module, CAN communication module respectively;The boost module connects inverter module;The boost module, the output direct current is converted into high-frequency pulse direct current, and pulse current is boosted, for the use of later-stage inverter module;The inverter module is used to convert high-frequency pulse direct current into sinusoidal wave alternating current.The utility model provides a kind of vehicle-mounted inverter monitoring and fault diagnosis system, realizes to vehicle-mounted inverter fault protection function, realizes the real-time monitoring of vehicle to vehicle-mounted inverter operating state and external load power consumption information, reduces the use risk and troubleshooting difficulty of vehicle-mounted inverter.

A method and apparatus for electro-pulse and ultrasonic synergistic driven melt infiltration sintering of tungsten-copper alloys are disclosed. The apparatus, centered on a high-temperature vacuum furnace, integrates an upper conductive mechanism, a middle limiting and insulating mechanism, and a lower conductive vibration mechanism, along with a temperature controller to achieve precise control of pressure, vacuum, temperature, electro-pulse, and ultrasonic vibration parameters during melt infiltration sintering. In preparing the tungsten-copper alloy, tungsten-copper alloy powder is first prepared and mixed in a specified ratio. The sample is placed in a sleeve structure within the furnace, a constant pressure is applied, and a vacuum is evacuated to a set value. Simultaneously, ultrasonic vibration and furnace heating are initiated. During the holding phase, pulsed direct current is applied. After sintering, the alloy is cooled under vacuum with the furnace, ultimately yielding a high-density tungsten-copper alloy. This invention effectively solves the problems of low density, high sintering temperature, long cycle time, and component segregation associated with traditional processes. The prepared alloy exhibits high density, uniform microstructure, and tight tungsten-copper interface bonding, making it suitable for tungsten-copper alloy preparation and applicable to a wide range of fields, including high-end electronics and aerospace.

To provide a technique for properly performing plasma processing using a pulsed DC signal.SOLUTION: A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber, the substrate support including a conductive base, an electrostatic chuck disposed on the conductive base, a chuck electrode disposed in the electrostatic chuck, a bias electrode disposed below the chuck electrode in the electrostatic chuck, an upper electrode disposed above the substrate support, a radio frequency (RF) generator electrically connected to the conductive base, the bias electrode, or the upper electrode and configured to generate an RF signal, a pulsed direct current (DC) generator electrically connected to the bias electrode and configured to generate a pulsed DC signal, and an RF filter connected between the bias electrode and the pulsed DC generator. And a ringing suppression circuit configured to suppress ringing superimposed on the pulsed DC signal.SELECTED DRAWING: Figure 3