79 results about "Pulsed DC" patented technology

The invention provides a target poisoning resisting method and system based on multi-stage pulse reactive sputtering, and belongs to the technical field of magnetron sputtering. According to the method, air serves as reaction gas, a pulse direct-current power source is adopted, and reactive sputtering treatment is conducted on a metal target material; the reactive sputtering treatment comprises a first stage, a second stage and a sputtering voltage feedback control stage in sequence. The sputtering power and the duty ratio are adjusted in three stages, the first stage can stabilize luminance build-up and preliminarily clean the surface of the target material, and the second stage can improve the nitrogen ionization rate (gt; 50%) and suppresses the oxygen ionization rate (lt; and in the sputtering voltage feedback control stage, the sputtering power and the duty ratio are adjusted according to the drop amplitude of the sputtering voltage, an insulating compound layer on the surface of the target material can be efficiently sputtered and stripped, and the poisoning state of the target material is effectively inhibited, so that the method can effectively inhibit target material poisoning, the service life of the target material is prolonged, complex equipment is not needed, and the cost is relatively low.

This invention discloses a method and apparatus for fabricating complex hollow structures using pulsed DC and induction eddy current cyclic loading assisted diffusion bonding, relating to a method for assisted heating diffusion bonding. It achieves efficient and uniform heating of metallic materials. Step 1: Prepare a predetermined complex hollow metal structure to be diffuse bonded, polish and clean the surface of the complex hollow metal structure; Step 2: Place the complex hollow metal structure in a tooling mold for molding, and place the mold into a vacuum furnace; Step 3: Set up a dual-source control system; Step 4: Perform diffusion bonding under specified parameters, depressurize after the diffusion time is completed, and cool in the furnace until it reaches room temperature before removing the part. This invention combines pulsed DC heating and induction eddy current heating for diffusion bonding, improving diffusion efficiency while ensuring temperature uniformity, increasing the welding rate, and improving the quality of the diffusion joint.

The invention provides a pulse-direct current electrochemistry composite deposition process of a nickel-tungsten-phosphorus alloy coating, and belongs to the technical field of coating preparation, and the pulse-direct current electrochemistry composite deposition process comprises the following steps: carrying out silane coupling agent modification treatment on alpha-aluminum oxide; carrying out modification treatment on the hexagonal boron nitride nanosheet by adopting hexadecyl trimethyl ammonium bromide; carrying out polyacrylic acid modification treatment on the nano silicon dioxide; nickel salt, tungsten salt, phosphorus salt, a complexing agent, a buffering agent, a primary brightener, a secondary brightener, a wetting agent, modified aluminum oxide, modified boron nitride, modified silicon dioxide and deionized water are mixed, stirred and heated, and a composite plating solution is obtained; the substrate serves as a cathode, pulse current is applied to the substrate for pulse electroplating, then the current density of the pulse current is continuously and linearly reduced to a target value, and finally direct current electroplating is conducted under the target value; by optimizing the formula of the composite plating solution and the pulse-direct current composite electroplating process, the nickel-tungsten-phosphorus alloy composite plating layer with high hardness, low friction, high wear resistance and corrosion resistance is finally obtained.

The multifunctional control circuit comprises an FPGA (Field Programmable Gate Array) logic module, an LDO (Low Dropout Regulator) power supply module and a superconducting quantum computing chip which are in communication connection in sequence, the FPGA logic module comprises an AWG waveform memory, an AWG waveform playing controller, a bypass SFDR cancellation module and an RFSoC digital-to-analog conversion module which are in communication connection in sequence along the signal transmission direction, wherein the output end of the RFSoC digital-to-analog conversion module is set as the output end of the FPGA logic module; the FPGA logic module further comprises a clock synchronization module, and the clock synchronization module inputs a clock signal to the RFSoC digital-to-analog conversion module. According to the invention, the XY microwave pulse, the DC Pulse pulse and the DC Offset DC voltage are unified to be generated in the same FPGA and RFSoC architecture, the bypass SFDR cancellation module is added to generate a cancellation signal opposite to the phase of a spurious component, and the method has the advantages of significantly reducing the main spurious component in an output channel and improving the effective signal purity.

The invention relates to a multi-stage electric field auxiliary forming device and method for a high-temperature titanium alloy thin-wall corrugated board structure. A high-temperature titanium alloy foil is placed on a feeding table, a motor power source is switched on to enable a lower forming roller to rotate, the foil enters the position between an upper forming roller and the lower forming roller, the motor power source is switched off after the foil is gripped, and a low-voltage large-current pulse direct-current power source is switched on; and the foil is heated. When the temperature of the foil reaches the target temperature, the motor is powered on, the lower forming roller rotates to drive the upper forming roller and the foil to move, and the corrugated board characteristics are preformed. And then, the pre-formed corrugation enters a second-stage forming process, and the specific forming process is kept consistent with the previous-stage forming process. And finally, the corrugated board is formed through multi-stage electric assistance. Compared with the prior art, through multi-stage forming, the current needed by single-stage forming is reduced, the service life of the device is prolonged, the requirement for the measuring range of a pulse direct-current power source is reduced, and accurate forming of the small fillet characteristic of the high-temperature titanium alloy corrugated board is ensured through the current directional flowing characteristic.

The utility model discloses a low-EMI drive circuit, a chip and electronic equipment, and belongs to the technical field of electronic circuits. A first pulse direct current is output through a first variable current source according to a first control signal; the second variable current source conducts the second pulse direct current to the power ground according to the second control signal; the current limiting circuit is used for limiting the first pulse direct current and the second pulse direct current; a parasitic capacitor of the first switching circuit and a parasitic capacitor of the second switching circuit are charged according to the first pulse direct current and are discharged according to the second pulse direct current so as to output a first voltage and a second voltage respectively; the first switching circuit outputs a high-level pulse based on the first voltage; the second switching circuit outputs a low-level pulse based on the second voltage; wherein the high-level pulse and the low-level pulse jointly form a driving signal; the duration of the edge of the pulse direct current is greater than the preset duration; at most one of the first variable current source and the second variable current source works at the same moment; and the electromagnetic radiation of the driving circuit is reduced.

A RF power generation system includes a power source configured to generate a periodic waveform applied to a load and a controller configured to receive at least one of a voltage signal or a current signal indicating a respective voltage and current applied to an electrode of the load. The controller determines a surface potential of a workpiece in the load in accordance with the at least one of the voltage signal or the current signal and a series capacitance of the electrode. The controller further determines an ion potential in accordance with an approximation of the surface potential. The periodic waveform may be one of a pulsed DC waveform, a RF waveform, or a pulsed RF waveform.

This invention relates to the field of thin film technology, specifically disclosing a method and a thin film for preparing single-crystal TiN thin films based on pulsed DC magnetron sputtering. The method includes: placing a substrate into the sputtering chamber of a magnetron sputtering apparatus, evacuating and heating it to 400°C; introducing an activation gas and performing initial magnetron sputtering on a titanium target at a sputtering threshold to form an adhesion-promoting layer on the substrate surface; turning off the activation gas and then introducing a reactive sputtering gas into the sputtering chamber; then performing high-intensity sputtering while simultaneously turning on a bias power supply, wherein the bias power supply is a synchronous pulse power supply that is inversely phase to the pulsed DC power supply; turning off the pulsed DC power supply and the introduction of nitrogen in the reactive sputtering gas, and continuing magnetron sputtering on the substrate; cycling 2-4 times to cool to room temperature to obtain a single-crystal TiN thin film. In this application, the substrate temperature is only 400°C during deposition, thus reducing energy consumption and shortening the time during subsequent cooling. The titanium nitride thin film prepared in this application exhibits a high sputtering deposition rate and high crystal quality.

The utility model discloses a magnetic resonance energy transfer wireless charging device, comprising a transmitting module comprising a rectification filter circuit, a transmitting circuit and a transmitting coil, the rectification filter circuit is configured to be used for converting power frequency alternating current into pulse direct current, the transmitting circuit is configured to be used for converting the pulse direct current into electromagnetic wave signals, and the transmitting coil is configured to be used for transmitting the electromagnetic wave signals; the transmitting coil is configured to be used for transmitting an electromagnetic wave signal; the receiving module comprises a receiving circuit, a receiving coil, a single chip microcomputer and lighting equipment, the receiving coil is configured to be used for receiving electromagnetic wave signals, and the receiving circuit is configured to convert the electromagnetic wave signals into pulse direct current to supply power to the lighting equipment; the single-chip microcomputer is configured to be used for realizing PWM dimming and / or switch control of the lighting equipment.

A system includes a pulsed direct current (DC) source. The pulsed DC source generates a DC voltage signal. The system includes an inductor-capacitor (LC) circuit coupled to the pulsed DC source to receive the DC voltage signal to output a square waveform voltage. The system further includes a high frequency (HF) radio frequency (RF) generator that generates an RF waveform. The system includes an impedance matching circuit coupled to the HF RF generator to receive the RF waveform to output a modified RF waveform. The LC circuit is coupled to the impedance matching circuit at a point to combine the modified RF waveform with the square waveform voltage. The modified RF waveform is combined with the square waveform voltage to output a modified square waveform voltage. The system includes a plasma chamber coupled to the point to receive the modified square waveform voltage.

The invention discloses a series energy storage-oriented staggered push-pull structure DC-DC conversion system, and the system comprises an energy storage unit series module which is configured to connect two energy storage batteries in series, enable each energy storage battery to independently supply energy, and output a potential terminal voltage; the PWM switch module is configured to complete staggered push-pull control and driving of the four MOS tubes under PWM control logic so as to obtain four groups of adaptive pulse direct-current voltages from potential terminal voltages; the high-frequency transformer is configured to generate a high-frequency alternating-current magnetic field in a primary coil of the high-frequency transformer by utilizing potential end voltage output by the energy storage unit series module under the control of the pulse direct-current voltage output by the PWM switch module, so that a secondary coil of the high-frequency transformer outputs high-frequency alternating-current voltage; and the high-frequency rectifying and filtering module is configured to convert the high-frequency alternating-current voltage output by the high-frequency transformer into pulsating direct current and convert the pulsating direct current into direct-current voltage through filtering. The system is very high in stability and can meet the performance requirement of series energy storage.

The embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for plasma processing a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to improving process uniformity across a surface of a substrate, reducing the defect rate of the surface of the substrate, or both. In some embodiments, the apparatus and methods provide improved control over the uniformity of the plasma formed on the edge of the substrate and / or the distribution of ion energy at the surface of the substrate. The improved plasma uniformity control can be used in combination with substrate handling methods, e.g., dechucking methods, to reduce particulate-related defects on the substrate surface. In some embodiments, the improved control of plasma uniformity is used to preferentially clean accumulated processing by-products from a portion of an edge ring during an in-situ plasma chamber cleaning process.

The present disclosure relates to methods, devices and systems for exposing microorganisms or compositions comprising functional proteins to an oscillating electric field substantially free of a magnetic component in order to improve stress responses, survival and metabolite or protein production. In embodiments, a controller drives one or more insulated emitters with a true AC signal or pulsed DC signal, in stepped, swept or shuffled patterns of an electric field oscillating at one or more frequencies in the range 210 Hz to 99 kHz. Exposure to the field provides surmounting energy that enhances protein breathing, catalysis, and fundamental functions of multiprotein complexes including transcription factors and ribosomes, thereby improving stress resistance of microorganisms, their viability during fermentation, drying, storage, transport, and / or increasing production of functional or therapeutic proteins, metabolites or microbial lysates. The technology is applicable to manufacture of probiotics, therapeutics, metabolites, food, alcohol, feed and bioenergy, cosmetics, nutraceuticals and biopharmaceuticals..

The invention relates to a manufacturing method of a high-strength metal ceramic alloy, which comprises the following steps: S1, preparing TiO2-Ni-Co-Mo-Cr composite oxide core-shell structure precursor powder through a sol-gel method by taking nano TiO2 powder as a ceramic phase precursor core layer raw material and soluble metal salt as a binding phase precursor shell layer raw material; s2, uniformly mixing the precursor powder with nano carbon black, and carrying out low-temperature pre-nitridation reduction reaction; s3, after the composite powder is granulated, dry pressing preforming is combined with cold isostatic pressing treatment; and S4, degreasing the biscuit, placing the biscuit in a high-pressure sintering furnace in a nitrogen atmosphere, and applying pulse direct current to assist sintering. According to the preparation method, TiN phase synthesis and densification sintering are completely decoupled, low-temperature pre-nitridation is used for completing complete conversion from TiO2 to TiN, a metal binding phase is obtained through synchronous reduction, and a TiN metal core-shell structure is completely reserved; and densification is realized through subsequent low-temperature sintering, so that the problem of abnormal growth of TiN crystal grains caused by superposition of reaction heat release and sintering high temperature in the prior art is effectively avoided.

A power supply system comprises a main circuit, a sampling circuit, a driving circuit and a controller, wherein: the power conversion circuit in the main circuit comprises an LLC resonant conversion circuit; the sampling circuit is electrically connected with part of the circuit in the main circuit, and is used for sampling information of input signals, resonant capacitor signals and output signals of the main circuit; the controller is electrically connected with the sampling circuit and the driving circuit, and is used for controlling the driving circuit based on the information sampled by the sampling circuit, so that the driving circuit drives the LLC resonant conversion circuit to realize active power factor correction, electrical isolation and voltage conversion; wherein the control strategy of the controller makes the input voltage of the LLC resonant conversion circuit be pulse direct current voltage or stable direct current voltage, and makes the LLC resonant conversion circuit work in a wide frequency range near the resonant frequency and far away from the resonant frequency. The power supply system reduces the number of power devices used, reduces the cost, reduces the volume, works in a soft switching state in all working conditions, and is conducive to high frequency.

A remote plasma processing system includes a plasma generator configured to generate plasma in an upper region of a processing chamber. A dual gas diffusing device is arranged between the upper region and a lower region of the processing chamber. The dual gas diffusing device is configured to supply metastable species and ions from the upper region to the lower region and a reactant gas to the lower region separately from the metastable species and ions. A substrate support is arranged in the lower region of the remote plasma processing system and includes a resistive heater. A first voltage source is configured to supply power to the resistive heater. A pulsed DC voltage source is configured to supply a pulsed DC bias to the resistive heater.

The application discloses a high-density lithium titanate fine-grain ceramic rapid sintering method based on electric pulse, which comprises the following steps: lithium titanate powder is prepared by a solid phase method; lithium titanate ceramic green bodies are obtained by tabletting the lithium titanate powder; the lithium titanate ceramic green bodies are placed in the middle of two pieces of graphite felt; and the rapid sintering is carried out under the action of a high-frequency direct-current pulse power, so that the high-density lithium titanate fine-grain ceramic is obtained. The high-frequency pulse direct-current is applied to both ends of the graphite felt, so that the Joule heat is generated in the graphite felt, the lithium titanate ceramic green bodies sandwiched in the middle of the graphite felt are rapidly sintered and densified, the lithium ceramic grain growth and lithium evaporation under long-time sintering are overcome, the density and grain size of the lithium titanate ceramic can be controlled by adjusting the pulse voltage and time; due to the high heating rate and short sintering time, the prepared fine-grain high-density lithium titanate ceramic has high compressive strength and bending strength, and the comprehensive mechanical properties of the lithium titanate ceramic during service are ensured to a certain extent.

The present application relates to the field of ion implantation preparation of electrode materials, and particularly relates to a method for preparing hollow tubular lithium battery positive electrode materials based on ion implantation method, comprising the following steps: preparing lithium-containing metal-organic composite spinning solution, electrostatically spinning to prepare fiber membrane, processing periodic micropores on the surface of the fiber membrane through laser micropore array, controlling calcination through segmented temperature rise in air atmosphere, performing nano-channel etching and multilayer ion implantation after annealing by using ion implantation device, synchronously applying pulse direct current field, and performing surface functionalization modification on the material, wherein the present application adopts three-stage dynamic rotating ion implantation system, combines with pulse laser assisted opening technology, and realizes gradient element distribution and lattice directional growth of nanoscale thickness.

In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided at a predefined frequency, wherein the applying of the pulsed RF power to the process gas generates a plasma in the chamber; during the applying of the RF power, applying a pulsed DC current to a magnetic coil that is disposed over the chamber, wherein the pulsed DC current is provided at the predefined frequency.

The application discloses a foil type tantalum electrolytic capacitor anode with super high capacitance density and a preparation method thereof. The energy source is a pulse direct current power supply, the pre-processed tantalum foil is used as the anode, the graphite electrode or inert metal is used as the cathode, the anode and the cathode are connected with the pulse direct current power supply, and are placed in an etching solution to perform electrochemical etching. The etching foil is subjected to anodic oxidation in a phosphoric acid aqueous solution to obtain the etched tantalum foil. The electrochemical etching process truly realizes the preparation of the high specific capacity etched tantalum anode foil. For the anode foil with a voltage resistance of 8.3V, the specific capacity is up to 570nF / mm 2 , and the thickness is less than 30μm, which is only 1 / 10 of the traditional sintered tantalum capacitor. If the tantalum capacitor is packaged in a sheet type, the size can be even reduced to below 100μm, which can almost meet the requirements of the most stringent embedded capacitor in technology. If the tantalum capacitor is packaged in a winding type, the maximum capacity can fully meet the requirements of more than 90% of the power system.

The application belongs to the technical field of wastewater treatment, and particularly relates to a method for degrading gatifloxacin in wastewater based on a cathode micro-arc plasma electrolysis technology. The method comprises the following steps: placing the wastewater in an electrolysis reactor, using a titanium rod as a cathode, a platinum sheet as an anode, applying a pulse direct current voltage with a voltage of 320V to 360V and a frequency of 150Hz, forming a gas film on the surface of the cathode and initiating plasma micro-arc discharge, degrading the gatifloxacin in the wastewater by active substances generated by the discharge, and the treatment time being 8 minutes to 12 minutes; wherein the wastewater comprises wastewater containing gatifloxacin. The method provided by the application can achieve nearly complete removal of gatifloxacin in an aqueous solution within 8 minutes under the condition of 100mg·L ‑1 GAT, 340V, pH=7.8, 0.5mol·L ‑1 KCl, and has great potential in treating high-concentration medical wastewater.

An AlO x A method for preparing an Al2O3 low-reflection, etch-resistant composite coating includes the following steps: In a first chamber, the surface of a substrate is cleaned by ion bombardment; in a second chamber, argon and oxygen are introduced, and at least one layer of Al2O3 is deposited on the surface of the substrate using pulsed DC magnetron sputtering. x Layer; containing AlO x The substrate of the layer is fed into the third chamber, argon and oxygen are introduced, and AlO is sputtered using pulsed DC magnetron sputtering. x An Al2O3 layer is deposited on the surface of the layer and cooled in the furnace to obtain AlO. x - Al2O3 low-reflection, etching-resistant composite coating. This invention constructs a non-stoichiometric Al2O3 composite coating within the composite coating. x A gradient structure of oxygen content gradually transitioning from a layer to a dense Al2O3 layer, with low oxygen content AlO2O3. x The layer has a high oxygen vacancy concentration and low reflectivity, which can effectively reduce the reflection intensity in the ultraviolet-visible band. The dense Al2O3 layer formed on the surface has good structural stability and chemical inertness, thus significantly improving the etching resistance of the coating in the plasma etching environment.

An iontophoresis administration device includes: a power source, used to generate the pulsed direct current required to cause a medicinal agent to permeate an administration region of an organism, wherein the power source generates a forward pulsed direct current during a first time period and a reverse pulses direct current during a second period of time; a dielectric layer, configured to be in contact with the administration region, wherein the dielectric layer includes or has attached thereto an active agent that is to permeate the administration region via a pulsed direct current; and at least two electrodes, used to receive the pulsed direct current outputted by the power source, facilitating the provision of the received pulsed direct current to the dielectric layer. The iontophoresis administration device provided by the present disclosure not only increases the skin permeation rate, but is also not likely to irritate or harm the skin.

The invention discloses an in-source cracking controllable pulse direct-current arc induced nano-liter electrospray ionization source and mass spectrum combined system and a detection method. The system comprises a mass spectrum, a quartz capillary tube, a metal coil, a positive wire, a negative wire and a direct-current arc generator. The high charge density characteristic of pulse direct-current arc plasma and the solution polarization effect induced by a metal coil are combined to construct a dual-drive ionization system. Under low voltage, molecular ion integrity is maintained; under high voltage, the characteristic fragment ion strength is obviously enhanced, the compound structure information can be obtained without depending on tandem mass spectrometry, and the problems of time consumption and sample consumption of nanoliter electrospray ionization source analysis are effectively solved. The pulse direct-current arc provides high-density positive and negative charges, the metal coil strengthens directional migration of charged species to the tip of the capillary tube through potential difference, and ionization stability and efficiency are remarkably improved.

A system including a plasma chamber configured for generating plasma with a lower electrode located within an electrostatic chuck (ESC), and an upper electrode disposed above the lower electrode. The system includes an edge ring surrounding the lower electrode. A main power generator is electrically coupled to the lower electrode and the edge ring via a common node, and is configured to supply a pulsed direct current (DC) power signal to the common node. A variable capacitor is electrically coupled between the common node and the edge ring, wherein the variable capacitor splits the pulsed DC power signal into a bias power signal delivered to the lower electrode and a tunable edge sheath (TES) power signal delivered to the edge ring. A high frequency power source is electrically coupled to the upper electrode and configured to supply a high frequency radio frequency (RE) power signal to the upper electrode.

This invention relates to the field of photomask manufacturing technology and discloses a method for chromium plating using gradient-doped pulsed sputtering photomasks. The method includes cleaning and drying a glass substrate; activating it with an argon-oxygen mixed gas and a radio frequency plasma source to expose active broken bonds on the surface; moving the substrate to a chromium-silicon alloy target; activating a pulsed DC sputtering power supply; and performing a nitrogen linear gradient gas inlet program to deposit a gradient-doped transition layer, constructing a transition band that slowly releases lattice deformation energy; switching to a pure chromium target in situ; co-sponging the pulsed DC and RF power supplies with phase-synchronized triggering modulation to deposit a pure chromium functional layer; bombarding the film surface with a low-energy RF gas using an argon-nitrogen mixed gas; and initiating an in-situ isothermal annealing program for furnace cooling; finally, continuous polishing to obtain the finished product. This invention alleviates lattice mismatch and thermal stress by constructing a compositionally continuous transition band and using dual-power modulated sputtering, thereby improving interfacial adhesion and coating density.

A voltage converter that features: a primary branch (2) configured to generate a pulse-modulated voltage or current from an input DC voltage; a transformer arrangement m ≥ 1 primary windings (4) and n ≥ 2 secondary windings (5) inductively coupled to each other, wherein the m primary windings (4) are connected to the primary branch (2); a secondary branch (3) configured to output a pulsed DC voltage or pulsed DC current, and comprising n series-connected capacitors (15, 16) and n secondary controllable semiconductor switches (13, 14); and n soft commutating networks, each of which is connected in parallel to one of the n secondary controllable semiconductor switches (13, 14); wherein each of the n secondary windings (5) is connected via at least one of the secondary controllable semiconductor switches (13, 14) to at least one of the capacitors (15, 16); and where each of the n softly commuting networks has: a series circuit consisting of a commutation inductor (22a, 22b), a first commutation diode (23a, 23b) and a commutation capacitor (24a, 24b), wherein the series circuit is connected in parallel to the relevant secondary controllable semiconductor switch (13, 14) and the commutation inductor (22a, 22b) is connected to a node between the secondary controllable semiconductor switch (13, 14) and the relevant of the n capacitors (15, 16); and a second commutation diode (25a, 25b) is connected between the nodes between the first commutation diode (23a, 23b) and the commutation capacitor (24a, 24b) and the nodes between the relevant secondary winding (5) and the relevant of the n capacitors (15, 16).

This application discloses a power supply device, comprising: a rectifier circuit for rectifying alternating current into pulsed direct current; a spike suppression circuit comprising: an absorption resistor, the first end of which is electrically connected to the rectifier circuit; an isolating switch, the switching path of which is connected in parallel with the absorption resistor; a boost power factor correction circuit comprising: a boost converter unit comprising: a boost inductor, the second end of which is electrically connected to the absorption resistor; a power switch, one end of which is electrically connected to the boost inductor and the other end is grounded; a boost diode, one anode of which is electrically connected to the switching path of the power switch and the other anode of which is electrically connected to the boost inductor; an output capacitor, the positive terminal of which is electrically connected to the cathode of the boost diode and the negative terminal of which is grounded; and a control circuit electrically connected to the control terminal of the power switch; and also provides an air conditioning device; this application limits the sudden change of current through the spike suppression circuit, thereby playing a damping role, absorbing part of the spike energy, and preventing the PFC control loop from failing.

The utility model discloses a cable take -up frame initiative arm prevent downslide system, including brake power, brake power converts commercial power into pulse direct current, and brake power is connected with the motor of cable take -up frame, control module, control module controls the operation of motor, and before the rotation of control motor's rotor, control transformer's pulse direct current acts on the stator of motor, and the stator winding of pulse direct current that acts on the motor of cable take -up frame forms stationary electric field, the utility model discloses through setting brake power, adds direct current voltage at the motor stator both ends of cable take -up frame, makes the motor inside produce a stationary magnetic field, when the rotor of motor rotates, cuts the magnetic force line and produces induced current, and this current and stationary magnetic field interact and produce the braking torque opposite with the rotation direction of rotor, and the braking torque acts on the motor rotor, and through the torque amplification of reduction gearbox and acts on the screw rod, fundamentally solves the initiative arm downslide problem.

The invention relates to the technical field of sludge treatment, in particular to an electrochemically-driven in-situ iron-mediated reinforced sludge dewatering conditioning system and method.The system comprises an anaerobic reactor which is configured to maintain an anaerobic environment so as to convert ferric iron in iron-rich sludge into ferrous iron; the electrochemical conditioning device is communicated with the anaerobic reactor and comprises a reaction tank, an electrode group, a pulse direct-current power supply, a stirring mechanism and an online CST detection system; the electrochemical conditioning device is used for synchronously generating directional oxidation and electric flocculation; the buffer tank is connected with the electrochemical conditioning device; the online CST detection unit is used for collecting a mud sample in real time and detecting the CST value of the mud sample. According to the method, in-situ conversion and efficient utilization of Fe < 3 + > to Fe < 2 + > in the iron-rich sludge are realized, the electrochemical oxidation and flocculation effects are synchronously improved, the conditioning process is accurately controlled, and finally, deep dehydration of the sludge is realized, and the water content of a sludge cake is reduced. Meanwhile, an online CST detection and feedback control system is integrated, and real-time optimization and accurate control of the process are achieved.