361 results about "Pulsed DC" patented technology

The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.

Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.

A method and apparatus for generating electromagnetic fields for healing. A device preferably includes a microcontroller and associated memory, a wire coil in electrical communication with a driving circuit that is controlled by the microcontroller in accordance with a program stored in the associated memory, wherein the driving circuit is effective to produce a pulsed DC output having a frequency in the range of about 0-45 Hz, more preferably in the range of 0.5-14.1 Hz and most preferably around 9.6 Hz. A user interface is provided for selecting one of a plurality of modes of operation and a port (e.g., a USB port) is provided to allow the program stored in the associated memory to be modified by way of a computer, memory card or the Internet. In another embodiment, the apparatus takes the form of a medallion that can be worn around a user's neck or strategically placed on a user's body or embedded in other user hardware such as a combat or racing helmet.

In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.

An AC-AC Converter for an AC source which in one embodiment has a first rectifier section rectifying the AC source into a first pulsed DC link voltage signal and a high frequency modulating section coupled to the first pulsed DC link voltage signal and producing a high frequency AC voltage signal. A high frequency transformer is coupled to the high frequency AC voltage signal producing a transformed high frequency AC signal. There is a second rectifier section coupled to the transformed high frequency AC signal and producing a second pulsed DC voltage signal and an unfolder section coupled to the second pulsed DC voltage signal and producing an output AC signal.

Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.

In accordance with the present invention, deposition of perovskite material, for example barium strontium titanite (BST) film, by a pulsed-dc physical vapor deposition process or by an RF sputtering process is presented. Such a deposition can provide a high deposition rate deposition of a layer of perovskite. Some embodiments of the deposition address the need for high rate deposition of perovskite films, which can be utilized as a dielectric layer in capacitors, other energy storing devices and micro-electronic applications. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the BST layer.

A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.

An LED lighting array is disclosed wherein a plurality of light emitting devices disposed in at least first and second columns are mounted on a planar mounting surface to form an emission plane. The emission axes of all the LEDs in a first column are parallel with each other and lie in a first plane. The emission axes of the LEDs in an adjacent, second column are also parallel, but a second plane containing the emission axes of the second column is disposed at a predetermined, non-zero angle with respect to the first plane. The non-zero angle is a function of the LED beam width and the distance to a lighting target. This configuration of the LEDs provides an optimum balance at a predetermined target distance between the size of the area illuminated and the brightness of the illumination of the target. In one aspect of the invention the LED lighting array includes at least first, second and third columns of LEDs. In another aspect of the invention an LED task light includes a transparent tube and an LED lighting array disposed within the tube. An electrical drive circuit associated with the mounting substrate within the tube provides pulsed direct current for driving the LED's.

There is provided by this invention novel magnetron sputtering apparatus that is generally comprised of a pulsed dc power supply capable of delivering peak powers of 0.1 megaWatts to several megaWatts with a peak power density greater than 1 kW/cm2. The power supply has a pulsing circuit comprised of an energy storage capacitor and serially connected inductor with a switching means for disconnecting the pulsing circuit from the plasma and recycling the inductor energy back to the energy storage capacitor at the detection of an arc condition. The energy storage capacitor and the serially connected inductor provide an impedance match to the plasma, limits the current rate of rise and peak magnitude in the event of an arc, and shapes the voltage pulses to the plasma.

The invention relates to a method and a device for applying a coating to a substrate, where a plasma jet of a low-temperature plasma is produced by conducting a working gas through an excitation zone. The plasma jet is directed at the substrate, and plate-shaped particles having an average thickness between 10 and 50,000 nanometers and a shape factor in a value range from 10 to 2000 are fed into the plasma jet. The plate-shaped particles are fed into the plasma jet by means of a carrier gas. The plasma jet is produced by exciting the working gas by means of an alternating voltage or a pulsed direct voltage.

A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate, such as a DC sputtering method or a pulsed DC sputtering method. This film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film. Another portion of the film has a decreased concentration of the added material and a sufficiently high insulating property; therefore, it can be used for a gate insulator of a semiconductor device, or the like.