258results about How to "Bonding strength" patented technology

A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.

A hermetic container comprises first and second substrates and bonded by bonding members to form a hermetically sealed space therebetween. Second bonding members placed on both sides of a first bonding member to form the hermetically sealed space between the substrates are sandwiched between the substrates, thereby bonding the substrates together with the first bonding member. A height of first bonding member is higher than that of second bonding member and at least one of the substrates is elastically deformed and is bonded by the first bonding member and the second bonding members. Thus, the hermetic container in which a compressing force has been applied to a height direction of the first bonding member is obtained.

A quartz-crystal oscillator has a configuration wherein a rectangular container 1 accommodating a piezoelectric oscillator device 5 therein is fixed to a rectangular supporting substrate 6 on which an IC device 7 is mounted via spacer members 12 formed of metal bodies. On the surface of the supporting substrate 6, part or all of the IC device 7 and side faces of the spacer members are coated with a resin material. When the quartz-crystal oscillator is implemented on a main board by soldering or the like, the problem that the solder for bonding the quartz-crystal oscillator to the main board is adhered to the spacer members 12, thereby causing a short-circuit can be effectively prevented.

A pulley includes a radial rolling bearing and a pulley main body which are integrated to each other by an insert molding method. Therefore, a metal insert member is not required between the resin pulley main body and the radial rolling bearing, thereby reducing production cost of the pulley. Further, an axial dimension of an outer ring of the radial rolling bearing is set larger than an axial dimension of an inner ring thereof, so that a contact area between the radial rolling bearing and the pulley main body is increased. Therefore, a connection strength between the radial rolling bearing and the pulley main body is increased, and a surface area of the radial rolling bearing is increased, thereby improving heat radiation performance of the radial rolling bearing.

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.