Semiconductor device having heat radiation plate and bonding member

Abstract

A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application is based on Japanese Patent Applications No. 2003-350814 filed on Oct. 9, 2003, No. 2003-352513 filed on October 10, and No. 2003-395572 filed on Nov. 26, 2003, the disclosures of which are incorporated herein by reference. FIELD OF THE INVENTION [0002] The present invention relates to a semiconductor device having a heat radiation plate and a bonding member. BACKGROUND OF THE INVENTION [0003] A semiconductor chip having high withstand voltage and large current capacity generates large heat while operating. Therefore, it is required to improve heat radiation radiated from the chip. In view of the heat radiation, a semiconductor device having a large current semiconductor chip is disclosed in Japanese Patent Application Publication No. 2003-110064 (i.e., U.S. patent application Publication No. 2003-0022464-1l). The semiconductor device includes a pair of heat sinks made of metal, which are disposed on both sides of the s...

AI Technical Summary

Benefits of technology

[0006] In view of the above-described problem, it is an object of the present invention to provide a semiconductor device having high reliability of a bonding member. Specifically, a strain in the bonding member disposed between a heat generation element and a heat radiation plate is reduced so that the bonding member is prevented from cracking. Further, even if the crack is generated in the bonding member, the crack does not affect the heat radiation so that the performance of the heat radiation is not reduced substantially.

[0007] A semiconductor device includes: a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member, respectively; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold molding almost all of the device. The first and second heat radiation plates are capable of radiating heat generated from the heat generation element. The heat generation element electrically and thermally connects to the first heat radiation plate through the bonding member and the heat radiation block. The heat generation element electrically and thermally connects to the second heat radiation plate through the bonding member. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. In the device, a strain in the bonding member disposed between the heat generation element and the heat radiation plate is reduced so that the bonding member is prevented from cracking. Thus, the reliability, i.e., the strength of the bonding member disposed between the heat generation element and the heat radiation plate is improved so that the semiconductor device has high reliability of the bonding member.

[0009] Further, a semiconductor device includes: a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member, respectively; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold molding almost all of the device. The first and second heat radiation plates are capable of radiating heat generated from the heat generation element. The heat generation element electrically and thermally connects to the first heat radiation plate through the bonding member and the heat radiation block. The heat generation element electrically and thermally connects to the second heat radiation plate through the bonding member. The heat radiation block has an edge portion with no corner so that the bonding member disposed at the edge portion becomes thick. The semiconductor device has high reliability of the bonding member.

[0011] Further, a semiconductor device includes: a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold molding almost all of the device. The first and second heat radiation plates are capable of radiating heat generated from the heat generation element. The heat generation element electrically and thermally connects to the first heat radiation plate through the bonding member and the heat radiation block. The heat generation element electrically and thermally connects to the second heat radiation plate through the bonding member. The heat radiation block has first and second surfaces. The first surface of the heat radiation block is disposed on a first heat radiation plate side, and the second surface of the heat radiation block is disposed on a heat generation element side. At least one of the first and second surfaces of the heat radiation block has a spherical shape. The semiconductor device has high reliability of the bonding member.

[0017] Further, a semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; and a resin mold molding almost all of the device. The first and second heat radiation plates are capable of radiating heat generated from the heat generation element. The heat generation element electrically and thermally connects to the first and second heat radiation plates through the bonding member. The resin mold has a glass transition temperature, which is equal to or higher than an upper limit of an operating temperature of the device. In the device, even when a large stress is applied to the device, a strain in the bonding member disposed at a connecting portion between the heat generation element and the bonding member is reduced so that the bonding member is prevented from cracking. Thus, the reliability, i.e., the strength of the bonding member is improved so that the semiconductor device has high reliability of the bonding member.

Problems solved by technology

Further, even if the crack is generated in the bonding member, the crack does not affect the heat radiation so that the performance of the heat radiation is not reduced substantially.

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