74 results about "Molecular beam" patented technology

The invention discloses a multi-layer thin film structure capable of achieving vertical exchange bias and free of external field auxiliary total current overturning and a preparation method and application thereof, the multi-layer thin film structure sequentially comprises a heavy metal base layer, an atomic level intercalation layer, a ferromagnetic layer and an antiferromagnetic layer from bottom to top, and the multi-layer thin film structure is prepared through molecular beam epitaxy. According to the invention, anisotropic epitaxial strain is introduced into the antiferromagnetic layer, so that a remarkable vertical exchange bias effect at room temperature is realized. Meanwhile, a global uncompensated magnetic moment is generated in the anisotropic epitaxial strain induction antiferromagnetic layer, an energy barrier of vertical exchange bias flipping is reduced, current-driven exchange bias flipping without an external field is further realized through a spin-orbit moment effect, the dependence on an external magnetic field in the prior art is overcome, and the performance of the device is improved. And the integration and the application potential of the spinning electronic device are obviously improved. The technology lays a foundation for design and development of efficient and high-density magnetic storage and logic devices.

The invention provides a method for determining the growth temperature of an epitaxial layer in a molecular beam epitaxy system, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: growing an InGaAsP epitaxial layer at a plurality of growth temperatures; testing and determining each As component; the function relation of data fitting is used as the corresponding relation between the growth temperature and the As component; at the first temperature, growing an InGaAsP epitaxial layer on the InGaAs epitaxial layer; measuring an As component, and calculating a corresponding growth temperature as a second temperature according to the corresponding relationship; the growth temperature when other epitaxial layers grow on the InGaAs epitaxial layer is equal to the reference temperature minus (the second temperature minus the first temperature). Through the obtained corresponding relation, the additional influence of heat absorption of the InGaAs epitaxial layer with the specific thickness on the growth temperature can be calculated, the growth temperature when other epitaxial layers grow on the InGaAs epitaxial layer is determined based on the additional influence, and the product quality can be improved.

The invention relates to the technical field of nuclear fusion, and discloses an ultrasonic molecular beam injection system for a fusion device.The ultrasonic molecular beam injection system comprises a gas source, a pressurizing unit, a storage unit and an injection unit, the pressurizing unit comprises a gas conveying pipeline, and the two ends of the gas conveying pipeline communicate with the gas source and the storage unit correspondingly; a booster pump is arranged on the gas conveying pipeline and used for pressurizing gas in the direction away from the gas source, and the storage unit can receive and store the pressurized gas so that the gas can reach a preset pressure value; the injection unit comprises an injection pipeline and a nozzle, one end of the injection pipeline is communicated with the storage unit, the other end of the injection pipeline is provided with the nozzle, the nozzle is used for stretching into a Tokamak vacuum chamber of the fusion device, and the injection pipeline can convey gas in the storage unit to the nozzle so as to form an ultrasonic molecular beam current through the nozzle. According to the invention, the injection function of the ultrasonic molecular beam in a large fusion device can be realized.

To provide a photoresist having excellent photon absorptivity and low line edge roughness.SOLUTION: A multilayer molecular film photoresist, comprising: a plurality of molecular beams extending in an upper direction of a substrate and arranged in a horizontal direction, wherein each of the molecular beams includes a plurality of inorganic monomolecules and organic monomolecules interposed between at least some of the inorganic monomolecules, the inorganic monomolecules and the organic monomolecules being connected to each other by bonding.SELECTED DRAWING: Figure 1

The invention provides a molecular beam rectifying device, a doping source furnace and a use method of the molecular beam rectifying device. The doping source furnace comprises a fixing device and a molecular beam rectifying device. The device comprises a crucible body and an insertion piece, the crucible body is used for containing a source material, and the insertion piece is used for being placed in the crucible body and can cover the whole cross section of the crucible body; a through hole is formed in the insertion piece, and the hole is used for allowing molecular beams formed by heating the source material to pass through. According to the device, the injection amount of the molecular beam can be adjusted through the holes in the insertion piece, so that the uniformity of the molecular beam at the outlet of the crucible body is improved, and the product yield is improved.

The invention provides a low-temperature molecular beam device, which relates to the field of low-temperature physical chemistry and comprises a refrigeration assembly, a primary shielding cover and a buffer cooling structure. The refrigeration assembly comprises a first-stage cold head and a second-stage cold head; the first-stage shielding cover is provided with a first-stage shielding inner cavity; the first-stage cold head is connected with the first-stage shielding cover and is used for cooling the first-stage shielding cover; the second-stage cold head is accommodated in the first-stage shielding inner cavity; the buffer cooling structure is connected to the second-stage cold head and is accommodated in the first-stage shielding inner cavity; the buffer cooling structure is provided with a buffer cooling inner cavity, and the buffer cooling inner cavity is used for introducing buffer gas and target molecules. According to the low-temperature molecular beam device in the embodiment of the invention, the temperature of the buffer gas can be further reduced.

The invention belongs to the field of molecular beam epitaxy equipment, and discloses molecular beam epitaxy equipment and a vertical cavity surface laser growth method. A formal product and a test structure are grown on the same tray at the same time, and the growth of the test structure is controlled by using a shielding device; the problem that in the prior art, a test structure needs to be independently grown or formal products need to be complexly processed is solved, and the method has the advantages of saving time and source materials, improving growth parameter control precision and facilitating problem positioning.

The invention discloses an ultrahigh vacuum micro-leakage valve structure which comprises a shell structure, a valve element plate and a differential importer, and the differential importer is connected with the shell structure through a flange used for being connected to an ultrahigh vacuum cavity. The bottom end of the valve core plate is connected with the differential importer, so that the differential importer drives the valve core plate to move up and down; the valve element plate is provided with a micropore array composed of multiple rows of micropores, so that the row number of the micropores, exposed out of the flange, of the micropore array is linearly changed in the moving process of the valve element plate. The method has general significance for realizing accurate control of the gas exposure amount under the high vacuum condition, and can be particularly applied to a gas molecular beam source which needs to accurately control the gas leakage amount, or an ion beam source which is based on gas ionization and requires the ion beam to have extremely high stability.

The present invention relates to a method for non-in-situ growth of topological superconducting heterojunctions. In the present invention, argon ions in a molecular beam epitaxy chamber are used to etch a single-crystalline TiN thin film that has been exposed to air due to cross-device transfer. The argon ions are accelerated by an anode electric field and collide with the surface of the single-crystalline TiN thin film, thereby removing impurity atoms and dust on the surface of the single-crystalline TiN thin film, solving the problems of high cost increase and film surface contamination caused by cross-device in-situ growth. At the same time, compared with the high-temperature annealing technology, the etching method of the present invention can greatly reduce the growth time, avoid contaminating the ultra-high vacuum window, and avoid affecting the service life of the equipment. Then, on the surface of the adjacent single-crystalline TiN thin film under ultra-high vacuum, a single-crystalline Bi2Se3 thin film is epitaxially grown on the single-crystalline TiN thin film to obtain a TiN / Bi2Se3 topological superconducting heterojunction.

The invention relates to the technical field of molecular beam epitaxy, and discloses a molecular beam epitaxy device capable of reducing background doping and a use method thereof.The molecular beam epitaxy device comprises an epitaxy chamber cavity internally provided with an active furnace and a substrate table, molecular beams evaporated by the source furnace comprise effective beams emitted to the substrate table and ineffective beams not passing through the substrate table, and the effective beams are different from the ineffective beams. The device further comprises a low-temperature pipe, the two ends of the low-temperature pipe are exposed out of the epitaxial chamber cavity, and the part, in the epitaxial chamber cavity, of the low-temperature pipe is coiled and wound to form a bent pipe for shielding invalid beams. In the molecular beam epitaxy device provided by the invention, the spirally wound low-temperature pipe is hermetically arranged in the epitaxy chamber cavity, so that during epitaxy, the background impurity concentration in the device can be effectively reduced, the pollution is reduced, the vacuum degree in the epitaxy chamber cavity is stabilized, and the efficiency of the device is improved. The epitaxial quality is improved; and the epitaxial chamber cavity is convenient to clean.

This invention relates to a molecular beam epitaxy shutter and apparatus, and pertains to the field of epitaxial growth technology. In the molecular beam epitaxy shutter of this invention, the first and second blades of the shutter plate have an included angle, such that when the shutter plate blocks the furnace opening, the molecular beam stream and thermal radiation emitted from the furnace opening intersect the shutter plate at an angle. The molecular beam stream and thermal radiation are reflected by the shutter plate and fall outside the furnace, thus avoiding the problem that existing shutter structures cannot effectively prevent source material splashing and thermal reflection to the furnace opening, affecting the stability of epitaxial growth and the coating quality.

The present invention relates to a mass spectrometry analysis device for in-situ gas-solid phase photocatalytic reaction, and relates to the technical field of mass spectrometry analysis. It includes a photoionization time-of-flight mass spectrometry device and an in-situ photocatalytic reactor, which are connected by a differential chamber. The in-situ photocatalytic reactor includes a catalyst placement mechanism, a reaction light source, an inlet pipe and an outlet pipe; the improved catalyst placement mechanism includes a flat fixed bed and a hollow closed plate-shaped housing, both of which are made of quartz material; the reaction light source is located above the plate-shaped housing, and the light-emitting surface corresponds to the working surface of the fixed bed; one side edge of the plate-shaped housing is connected to the inlet pipe, and the other side edge is connected to the outlet pipe, and a sand core is provided in the outlet pipe. The present invention realizes more in-situ sampling of gas-phase intermediates, ultra-fast capture, is more conducive to the desorption of gas-phase intermediates under low pressure, and the molecular beam can "cool" gas-phase molecules, which is very suitable for studying the reaction mechanism of gas-phase intermediates through gas-solid phase photocatalytic reaction, and then guiding the synthesis of catalysts.

The present invention discloses a beam source system for generating low-temperature molecules, comprising a vacuum system, a pulse tube refrigerator, a gas reaction chamber, a gas pipeline, a flowmeter, a sample rod, a motor transmission device, a vacuum stepper motor, a motor driver, and a YAG laser. The present invention enables the low-temperature motor to drive the experimental sample rod to rotate continuously and stably at ultra-low temperatures; the YAG laser uniformly ablates the side surface of the sample rod, and an inert pre-cooled carrier gas is used to achieve the continuous and stable generation of low-speed and low-temperature atomic or molecular beams. The specially designed low-temperature motor has freely adjustable speed and ensures that, while the beam source is stable, motor heating will not cause the beam source cavity temperature to exceed 5K. Since the position of the YAG ablation focus does not need to be changed, the aerodynamic properties within the beam source cavity can be kept stable. The present invention has the advantages of high stability and good beam quality, and has significant application prospects in the field of atomic and molecular physics.

The application relates to the technical field of nuclear fusion, and discloses an ultrasonic molecular beam injection system for a fusion device and a use method thereof, wherein the ultrasonic molecular beam injection system comprises a gas source, a pressurizing unit, a storage unit and an injection unit; the pressurizing unit comprises a gas conveying pipeline, two ends of the gas conveying pipeline are communicated with the gas source and the storage unit respectively, a pressurizing pump is arranged on the gas conveying pipeline, the pressurizing pump is used for pressurizing the gas in a direction away from the gas source, and the storage unit can receive and store the pressurized gas so that the gas reaches a preset pressure value; the injection unit comprises an injection pipeline and a nozzle, one end of the injection pipeline is communicated with the storage unit, the other end is provided with the nozzle, the nozzle is used for extending into a tokamak vacuum chamber of the fusion device, and the injection pipeline can convey the gas in the storage unit to the nozzle so as to form an ultrasonic molecular beam flow through the nozzle. The application can realize the injection function of the ultrasonic molecular beam flow in a large fusion device.

The invention provides a swinging shutter device and molecular beam epitaxy equipment, and relates to the technical field of molecular beam epitaxy, and the swinging shutter device comprises a supporting seat which is arranged below a jet orifice of a source furnace; the baffle is arranged on the front side of the jet orifice of the source furnace, the lower end of the baffle is connected with a swing arm, and the swing arm can rotate relative to the supporting seat; first ends of the connecting rods are hinged to the swing arms; the lifting assembly pulls the connecting rod to drive the baffle to swing back and forth between a first position and a second position on the front side of a jet orifice of the source furnace; when the baffle is in the first position, molecular beams sprayed to the film growth area by the source furnace are completely blocked by the baffle; and when the baffle plate is in the second position, the baffle plate does not block the beam sprayed to the film growth area by the source furnace. The swing shutter device provided by the invention can be suitable for the transformation of the existing molecular beam epitaxy equipment, solves the problems of untight shutter blocking and slow response of the existing molecular beam epitaxy equipment, and ensures the long-term stable operation of the molecular beam epitaxy equipment.

The invention relates to the technical field of nuclear fusion, in particular to a spherical Tokamak feeding system based on ultrasonic molecular beam injection. Comprising the steps that a gas tank, a hydrogen tank, a pressure reducing valve, a needle valve and the like form a common gas supply loop to serve as an initial feeding channel so as to meet the feeding requirement of daily operation, and an ultrasonic molecular beam injection gas path is additionally arranged on the basis to serve as a secondary supplementing feeding channel in the plasma discharging process and used for improving the plasma density; and compared with a traditional air supply mode for secondary feeding, the response time is shorter, and the feeding efficiency is higher. Finally, the ultrasonic molecular beam injection gas path and the initial feeding channel are connected through a gas pressure measuring assembly so as to monitor the gas pressure of the two gas paths; based on the air pressure of the two air paths, the amount of air fed every time can be accurately measured. According to the invention, staged fuel gas injection can be carried out on the spherical tokamak, the injection efficiency of the fuel gas is greatly improved, and the wall circulation is reduced.

The present application relates to molecular beam mass spectrometry instrument, especially to a kind of vacuum ultraviolet light photoelectron ionization source device for molecular beam mass spectrometry.It includes vacuum ultraviolet light source, ionization source cavity, ring electrode, photocathode and differential electrode, wherein vacuum ultraviolet light source is arranged on the side wall of ionization source cavity, ring electrode and photocathode are sequentially arranged in ionization source cavity along the light path direction of vacuum ultraviolet light source, coaxial sampling cone and differential electrode are respectively arranged on the two side walls of ionization source cavity along the direction perpendicular to the light path of vacuum ultraviolet light source, the emitted light of vacuum ultraviolet light source irradiates photocathode to generate photoelectron, photoelectron collides with gas sample entering from sampling cone in ring electrode to obtain gas sample ion, and gas sample ion is output through differential electrode.The present application uses VUV light beam to irradiate molecular beam from side vertical intersection, to achieve threshold ionization effect;Single-photon ionization effect is realized simultaneously.

This invention provides a method and related equipment for measuring molecular beam density, applied to a molecular beam density measurement system. The system includes a vacuum chamber, a precision leak valve, a vacuum ion gauge, a microchannel plate detector, and a laser ionization device. The method includes: controlling the opening of the precision leak valve to introduce background gas into the vacuum chamber and obtaining the standard density of the background gas; photoionizing the background gas and acquiring a first ion signal through the microchannel plate detector; establishing a quantitative calibration relationship between the first ion signal and the standard density; maintaining the operating parameters of the laser ionization device consistent with those used when establishing the quantitative calibration relationship, controlling the laser ionization device to photoionize the target molecular beam and acquiring a second ion signal generated by the target molecular beam; and calculating the absolute density of the target molecular beam based on the second ion signal using the quantitative calibration relationship. This application can improve the accuracy of molecular beam density measurement by introducing a standard gas of known density to establish a quantitative calibration relationship.

The invention relates to a low-viscosity nano drag reducer applicable to a tight oil reservoir'fracturing-three-production 'integrated process as well as a preparation method and application of the low-viscosity nano drag reducer. The low-viscosity nano drag reducer comprises the following components in percentage by weight: 10-40% of a water-soluble monomer, 10-30% of a nonionic vinyl monomer and 10-50% of a cosolvent, 5-25% of inorganic salt; 0.01%-0.3% of an initiator; and the balance of water. The low-viscosity nano drag reducer suitable for the tight oil reservoir fracturing-three-production integrated process has a nanoscale molecular beam size, so that fracturing fluid can penetrate into a micro-nanoscale pore throat in a tight oil reservoir, and effective utilization of oil and gas resources is realized; the fracturing fluid prepared from the low-viscosity nano drag reducer has the characteristic of low viscosity, so that the fracturing fluid has small damage to a reservoir after gel breaking and flowback, and continuous production of oil and gas resources is facilitated.

The utility model relates to a crucible which is used for carrying out evaporation on a base plate of a circular structure, and comprises a bottle body used for containing raw materials; the bottle opening is provided with an opening, a molecular beam is generated after the raw material is heated and outwards diffused to the surface of the substrate through the opening of the bottle opening, the surface of the substrate is parallel to the horizontal plane during evaporation, and an acute angle is formed between the axis direction of the bottle body and the direction perpendicular to the surface of the substrate; wherein the cross section of the bottle opening is of an oval structure in the direction perpendicular to the axis of the bottle body, so that the cross section of a molecular beam diffused outwards through the opening of the bottle opening is of a circular structure. According to the crucible, the shape of a molecular beam can be matched with that of a substrate of a circular structure, so that the waste phenomenon of the molecular beam is greatly reduced, the consumption of expensive raw materials is greatly reduced, the energy consumption required by evaporation raw materials is greatly reduced, and the utilization rate of heat energy is improved; in addition, for raw materials with the same volume, more products can be evaporated, and the yield of the products is improved.

Embodiments of the present application provide a system, method and medium for pulsed molecular beam measurement, wherein the system comprises: a control module, a pulse valve, an ion gauge and an oscilloscope, the pulse valve, the ion gauge and the oscilloscope being connected with the control module respectively; the control module is used for controlling the pulse valve and the ion gauge to start; the pulse valve is used for spraying gas containing target molecules to a rear vacuum cavity after starting, the gas forms a molecular beam in the vacuum cavity; the ion gauge is used for emitting hot electrons to the vacuum cavity after starting, the molecular beam collides with the hot electrons in the vacuum cavity to form a current signal corresponding to the molecular beam; the control module is further used for collecting the current signal, amplifying and converting the current signal into a voltage signal, and transmitting the voltage signal to the oscilloscope; the oscilloscope is used for collecting and processing the voltage signal to obtain visualized molecular beam data, aiming to suppress noise interference in the process of pulsed molecular beam measurement and improve the accuracy of pulsed molecular beam measurement.

The invention provides a method and a device for evaluating the atomic oxygen resistance of a material. The method comprises the following steps: constructing an initial three-dimensional periodic molecular model of a to-be-evaluated organic material; performing NPT ensemble optimization and geometric optimization on the three-dimensional periodic molecular model to obtain an optimized three-dimensional periodic molecular model; introducing an atomic oxygen molecular beam into reaction molecular dynamics simulation, setting a plurality of atomic oxygen incident angles, and performing atomic oxygen action simulation on the optimized three-dimensional periodic molecular model to obtain atomic oxygen reaction data under each incident angle; processing the atomic oxygen reaction data to obtain an atomic oxygen reaction rate Ey corresponding to each incident angle; and judging the atomic oxygen resistance of the to-be-evaluated organic material according to the atomic oxygen reaction rate Ey. The evaluation method provided by the invention can improve the evaluation efficiency of the atomic oxygen resistance of the material.

The present application relates to the technical field of aerospace space metrology, and in particular, to a polyatomic molecular directed beam generation device, comprising a directed beam generation chamber, wherein a radio frequency ion source, an ion acceleration module, an ion screening module, an ion neutralization module and an ion absorption module which are arranged in sequence in an axial direction are provided inside the directed beam generation chamber, a radio frequency generation and pulse modulation module is provided on the outer wall of the directed beam generation chamber, and the radio frequency generation and pulse modulation module comprises a radio frequency signal generator, a pulse modulation module, a power amplifier and a radio frequency coil. According to the present application, for polyatomic molecules with complex compositions after ionization, a high-speed directed molecular beam with independently adjustable velocity and density, high gas purity and good velocity consistency can be formed by means of active regulation and screening, which can provide a standard test environment simulating an orbital gas environment for a space metrology-related instrument.

The utility model relates to a low-temperature ultrasonic molecular beam injection system suitable for a fusion device. The system comprises a low-temperature gas storage tank with a double-layer structure, a pulse electromagnetic valve and a Laval nozzle. The low-temperature gas storage tank is composed of an inner tank body and an outer tank body, the inner tank body is used for storing injected gas, and the outer tank body is used for maintaining a low-temperature state. The pulse electromagnetic valve is used for controlling injection of gas, and the Laval nozzle is used for accelerating the gas and injecting the gas into the vacuum cavity of the fusion device. A liquid nitrogen cooling mode is adopted, a low-temperature ultrasonic molecular beam injection system is formed, and the feeding efficiency after particles are injected into the Tokamak device can be effectively improved by utilizing the cluster effect of the low-temperature particles.

The invention belongs to the technical field of medicine preparations, discloses a preparation method of a high-stability medicine amorphous solid dispersion, and aims to solve the problems of medicine degradation, solvent residue, easiness in crystal returning in an amorphous state and the like in the preparation of the existing medicine amorphous solid dispersion. The preparation method comprises the following steps: in an ultra-high vacuum and ultra-low temperature environment, evaporating a drug and a carrier polymer into atom or molecular beams in an ultra-mild evaporation mode, and accurately controlling codeposition, so that the atom or molecular beams are subjected to ultra-fast condensation on the surface of an ultra-low temperature substrate, and an atom / molecular level compact amorphous structure is directly formed. By the adoption of the method, high temperature is thoroughly avoided, no organic solvent is left, extreme amorphous physical stability is achieved from the atomic / molecular level, and medicine back crystallization is fundamentally inhibited.

The invention provides a beam characteristic integrated distribution measurement system for an ultrasonic molecular beam, relates to the technical field of ultrasonic molecular beam injection, and solves the limitation problem that vacuum environment compatibility and multi-parameter synchronous measurement requirements are difficult to meet in the prior art. In the system, a glow discharge module generates and maintains glow discharge in a vacuum chamber, so that existing gas is ionized to form plasma; the SMBI module maintains the preset vacuum degree of the vacuum chamber, configures SMBI neutral particle beams and injects the SMBI neutral particle beams into the area where the plasma is located in the vacuum chamber; the probe measurement module measures the saturation flow of the ultrasonic molecular beam particles and obtains the distribution measurement result of the beam velocity of the ultrasonic molecular beam particles; and the high-speed image acquisition module shoots the whole process of beam morphology change after ionization to obtain an optical morphology evolution measurement result. Through the synergistic effect of the functional modules, the measurement of parameters such as beam morphology, divergence angle, effective injection distance and the like of the ultrasonic molecular beam can be realized.

The invention relates to a small-signal free radical infrared spectrum detection method. The method comprises the following steps: 1, acting photolysis laser on a precursor molecular beam source to obtain a free radical and precursor mixed beam source; 2, infrared laser and free electron laser act on the free radical and precursor mixed beam source to obtain a semi-excitation mixed ion beam source; 3, after the semi-excitation mixed ion beam source passes through an accelerator, a flight time difference T is formed between precursor ions and free ions in the semi-excitation mixed ion beam source; 4, the ion beam source enters a deflection electric field, a first electrode of the deflection electric field applies a voltage pulse signal set according to the flight time difference T, precursor ions deflect, move and are discharged when the voltage pulse signal exists, and the ion beam source enters a detector after passing through a reflector when the voltage pulse signal does not exist. Deflection, movement and discharge of precursor ions are realized in the deflection electric field, free radical ion signals can be increased, and measurement of small-signal free radical infrared spectrum is realized.

The invention belongs to the technical field of analytical chemical instruments, and particularly relates to a time-resolved flash decomposition time-of-flight mass spectrometry device. The device comprises a supporting structure, a vacuum cavity, a reaction tank assembly and a time-of-flight mass spectrum. Reactants are loaded into the flow tube reactor through a straight tube; laser emitted by an external trigger laser device is shot into the reactor from a CF63 observation window on one side, and a precursor in the reactor is photolyzed to generate free radicals which react with gas in a tube; reacted gas molecules are sampled by a sampling micropore in the center of the flow tube and a sampling nozzle, and molecular beams are introduced into a photoionization chamber and are ionized by vacuum ultraviolet light emitted by a vacuum ultraviolet discharge lamp; ionized ions are detected by time-of-flight mass spectrometry. The synchronous control module coordinates the photolysis laser and the mass spectrum sampling system, and triggers acquisition of multiple groups of mass spectrum data at preset time intervals in a single photolysis process, so that a time resolution effect is achieved, product information at different time points in single photolysis is obtained, and a powerful experimental means is provided for free radical reaction kinetics research.

The invention relates to a molecular beam epitaxial shutter and device, and relates to the technical field of epitaxial growth. According to the molecular beam epitaxial shutter, the included angle is formed between the first blade and the second blade of the shutter piece, so that when the shutter piece shields the furnace opening of the source furnace, molecular beam current and heat radiation emitted from the furnace opening of the source furnace are obliquely intersected with the shutter piece, and the molecular beam current and the heat radiation fall outside the source furnace after being reflected by the shutter piece; therefore, the problem that an existing shutter structure cannot effectively prevent the source material from splashing and heat from being reflected to the furnace opening of the source furnace, so that the epitaxial growth stability and the coating quality of equipment are affected is solved.

The application relates to the technical field of molecular beam epitaxy equipment, in particular to a long-neck vertical crucible, a source furnace and a molecular beam epitaxy equipment, which comprises a vertical crucible body and a diffusion neck integrally formed with the vertical crucible body, the inside of the vertical crucible body is provided with a charging cavity, the top end of the charging cavity is provided with a narrow mouth, the diffusion neck is provided with a diffusion channel, the feeding end of the diffusion channel is communicated with the narrow mouth, and the diffusion neck is arranged at an angle with the vertical crucible body. The application can keep the liquid surface area of raw materials constant, make the beam intensity of a molecular beam or an atomic beam long-term stable and not attenuate, eliminate the direct view of the liquid surface of the raw materials and the substrate, avoid thermal radiation interference, ensure the uniformity of the substrate temperature, crack and filter large molecular groups or large atomic groups, and significantly reduce the film defect rate, the vertical crucible body is arranged outside a growth cavity, the raw material loading capacity is greatly improved, the maintenance period is prolonged, the beam fluctuation when a baffle is opened is reduced, and the beam uniformity in the time scale is improved.