28 results about "Molecular beam" patented technology

To provide a photoresist having excellent photon absorptivity and low line edge roughness.SOLUTION: A multilayer molecular film photoresist, comprising: a plurality of molecular beams extending in an upper direction of a substrate and arranged in a horizontal direction, wherein each of the molecular beams includes a plurality of inorganic monomolecules and organic monomolecules interposed between at least some of the inorganic monomolecules, the inorganic monomolecules and the organic monomolecules being connected to each other by bonding.SELECTED DRAWING: Figure 1

This invention relates to a molecular beam epitaxy shutter and apparatus, and pertains to the field of epitaxial growth technology. In the molecular beam epitaxy shutter of this invention, the first and second blades of the shutter plate have an included angle, such that when the shutter plate blocks the furnace opening, the molecular beam stream and thermal radiation emitted from the furnace opening intersect the shutter plate at an angle. The molecular beam stream and thermal radiation are reflected by the shutter plate and fall outside the furnace, thus avoiding the problem that existing shutter structures cannot effectively prevent source material splashing and thermal reflection to the furnace opening, affecting the stability of epitaxial growth and the coating quality.

The invention provides a swinging shutter device and molecular beam epitaxy equipment, and relates to the technical field of molecular beam epitaxy, and the swinging shutter device comprises a supporting seat which is arranged below a jet orifice of a source furnace; the baffle is arranged on the front side of the jet orifice of the source furnace, the lower end of the baffle is connected with a swing arm, and the swing arm can rotate relative to the supporting seat; first ends of the connecting rods are hinged to the swing arms; the lifting assembly pulls the connecting rod to drive the baffle to swing back and forth between a first position and a second position on the front side of a jet orifice of the source furnace; when the baffle is in the first position, molecular beams sprayed to the film growth area by the source furnace are completely blocked by the baffle; and when the baffle plate is in the second position, the baffle plate does not block the beam sprayed to the film growth area by the source furnace. The swing shutter device provided by the invention can be suitable for the transformation of the existing molecular beam epitaxy equipment, solves the problems of untight shutter blocking and slow response of the existing molecular beam epitaxy equipment, and ensures the long-term stable operation of the molecular beam epitaxy equipment.

The invention relates to the technical field of nuclear fusion, in particular to a spherical Tokamak feeding system based on ultrasonic molecular beam injection. Comprising the steps that a gas tank, a hydrogen tank, a pressure reducing valve, a needle valve and the like form a common gas supply loop to serve as an initial feeding channel so as to meet the feeding requirement of daily operation, and an ultrasonic molecular beam injection gas path is additionally arranged on the basis to serve as a secondary supplementing feeding channel in the plasma discharging process and used for improving the plasma density; and compared with a traditional air supply mode for secondary feeding, the response time is shorter, and the feeding efficiency is higher. Finally, the ultrasonic molecular beam injection gas path and the initial feeding channel are connected through a gas pressure measuring assembly so as to monitor the gas pressure of the two gas paths; based on the air pressure of the two air paths, the amount of air fed every time can be accurately measured. According to the invention, staged fuel gas injection can be carried out on the spherical tokamak, the injection efficiency of the fuel gas is greatly improved, and the wall circulation is reduced.

This invention provides a method and related equipment for measuring molecular beam density, applied to a molecular beam density measurement system. The system includes a vacuum chamber, a precision leak valve, a vacuum ion gauge, a microchannel plate detector, and a laser ionization device. The method includes: controlling the opening of the precision leak valve to introduce background gas into the vacuum chamber and obtaining the standard density of the background gas; photoionizing the background gas and acquiring a first ion signal through the microchannel plate detector; establishing a quantitative calibration relationship between the first ion signal and the standard density; maintaining the operating parameters of the laser ionization device consistent with those used when establishing the quantitative calibration relationship, controlling the laser ionization device to photoionize the target molecular beam and acquiring a second ion signal generated by the target molecular beam; and calculating the absolute density of the target molecular beam based on the second ion signal using the quantitative calibration relationship. This application can improve the accuracy of molecular beam density measurement by introducing a standard gas of known density to establish a quantitative calibration relationship.

The utility model relates to a crucible which is used for carrying out evaporation on a base plate of a circular structure, and comprises a bottle body used for containing raw materials; the bottle opening is provided with an opening, a molecular beam is generated after the raw material is heated and outwards diffused to the surface of the substrate through the opening of the bottle opening, the surface of the substrate is parallel to the horizontal plane during evaporation, and an acute angle is formed between the axis direction of the bottle body and the direction perpendicular to the surface of the substrate; wherein the cross section of the bottle opening is of an oval structure in the direction perpendicular to the axis of the bottle body, so that the cross section of a molecular beam diffused outwards through the opening of the bottle opening is of a circular structure. According to the crucible, the shape of a molecular beam can be matched with that of a substrate of a circular structure, so that the waste phenomenon of the molecular beam is greatly reduced, the consumption of expensive raw materials is greatly reduced, the energy consumption required by evaporation raw materials is greatly reduced, and the utilization rate of heat energy is improved; in addition, for raw materials with the same volume, more products can be evaporated, and the yield of the products is improved.

The invention provides a method and a device for evaluating the atomic oxygen resistance of a material. The method comprises the following steps: constructing an initial three-dimensional periodic molecular model of a to-be-evaluated organic material; performing NPT ensemble optimization and geometric optimization on the three-dimensional periodic molecular model to obtain an optimized three-dimensional periodic molecular model; introducing an atomic oxygen molecular beam into reaction molecular dynamics simulation, setting a plurality of atomic oxygen incident angles, and performing atomic oxygen action simulation on the optimized three-dimensional periodic molecular model to obtain atomic oxygen reaction data under each incident angle; processing the atomic oxygen reaction data to obtain an atomic oxygen reaction rate Ey corresponding to each incident angle; and judging the atomic oxygen resistance of the to-be-evaluated organic material according to the atomic oxygen reaction rate Ey. The evaluation method provided by the invention can improve the evaluation efficiency of the atomic oxygen resistance of the material.

The present application relates to the technical field of aerospace space metrology, and in particular, to a polyatomic molecular directed beam generation device, comprising a directed beam generation chamber, wherein a radio frequency ion source, an ion acceleration module, an ion screening module, an ion neutralization module and an ion absorption module which are arranged in sequence in an axial direction are provided inside the directed beam generation chamber, a radio frequency generation and pulse modulation module is provided on the outer wall of the directed beam generation chamber, and the radio frequency generation and pulse modulation module comprises a radio frequency signal generator, a pulse modulation module, a power amplifier and a radio frequency coil. According to the present application, for polyatomic molecules with complex compositions after ionization, a high-speed directed molecular beam with independently adjustable velocity and density, high gas purity and good velocity consistency can be formed by means of active regulation and screening, which can provide a standard test environment simulating an orbital gas environment for a space metrology-related instrument.

The invention belongs to the technical field of medicine preparations, discloses a preparation method of a high-stability medicine amorphous solid dispersion, and aims to solve the problems of medicine degradation, solvent residue, easiness in crystal returning in an amorphous state and the like in the preparation of the existing medicine amorphous solid dispersion. The preparation method comprises the following steps: in an ultra-high vacuum and ultra-low temperature environment, evaporating a drug and a carrier polymer into atom or molecular beams in an ultra-mild evaporation mode, and accurately controlling codeposition, so that the atom or molecular beams are subjected to ultra-fast condensation on the surface of an ultra-low temperature substrate, and an atom / molecular level compact amorphous structure is directly formed. By the adoption of the method, high temperature is thoroughly avoided, no organic solvent is left, extreme amorphous physical stability is achieved from the atomic / molecular level, and medicine back crystallization is fundamentally inhibited.

The invention relates to a small-signal free radical infrared spectrum detection method. The method comprises the following steps: 1, acting photolysis laser on a precursor molecular beam source to obtain a free radical and precursor mixed beam source; 2, infrared laser and free electron laser act on the free radical and precursor mixed beam source to obtain a semi-excitation mixed ion beam source; 3, after the semi-excitation mixed ion beam source passes through an accelerator, a flight time difference T is formed between precursor ions and free ions in the semi-excitation mixed ion beam source; 4, the ion beam source enters a deflection electric field, a first electrode of the deflection electric field applies a voltage pulse signal set according to the flight time difference T, precursor ions deflect, move and are discharged when the voltage pulse signal exists, and the ion beam source enters a detector after passing through a reflector when the voltage pulse signal does not exist. Deflection, movement and discharge of precursor ions are realized in the deflection electric field, free radical ion signals can be increased, and measurement of small-signal free radical infrared spectrum is realized.

The invention relates to a molecular beam epitaxial shutter and device, and relates to the technical field of epitaxial growth. According to the molecular beam epitaxial shutter, the included angle is formed between the first blade and the second blade of the shutter piece, so that when the shutter piece shields the furnace opening of the source furnace, molecular beam current and heat radiation emitted from the furnace opening of the source furnace are obliquely intersected with the shutter piece, and the molecular beam current and the heat radiation fall outside the source furnace after being reflected by the shutter piece; therefore, the problem that an existing shutter structure cannot effectively prevent the source material from splashing and heat from being reflected to the furnace opening of the source furnace, so that the epitaxial growth stability and the coating quality of equipment are affected is solved.

The application relates to the technical field of molecular beam epitaxy equipment, in particular to a long-neck vertical crucible, a source furnace and a molecular beam epitaxy equipment, which comprises a vertical crucible body and a diffusion neck integrally formed with the vertical crucible body, the inside of the vertical crucible body is provided with a charging cavity, the top end of the charging cavity is provided with a narrow mouth, the diffusion neck is provided with a diffusion channel, the feeding end of the diffusion channel is communicated with the narrow mouth, and the diffusion neck is arranged at an angle with the vertical crucible body. The application can keep the liquid surface area of raw materials constant, make the beam intensity of a molecular beam or an atomic beam long-term stable and not attenuate, eliminate the direct view of the liquid surface of the raw materials and the substrate, avoid thermal radiation interference, ensure the uniformity of the substrate temperature, crack and filter large molecular groups or large atomic groups, and significantly reduce the film defect rate, the vertical crucible body is arranged outside a growth cavity, the raw material loading capacity is greatly improved, the maintenance period is prolonged, the beam fluctuation when a baffle is opened is reduced, and the beam uniformity in the time scale is improved.

The invention discloses a mobile sampling time-of-flight mass spectrometry detection device and application, and belongs to the technical field of mass spectrometry. The device comprises a reaction tube, a sleeve, a moving mechanism, a grading air exhaust mechanism, a photoionization chamber and a reflective time-of-flight mass spectrometer, wherein the wall surface of the reaction tube is provided with multiple axial sampling areas; the sleeve is sleeved outside the reaction tube; the side wall of the sleeve is provided with a quartz nozzle; during working, the moving mechanism drives the sleeve to enable the quartz nozzle to be aligned with a sampling area, gas forms an ultrasonic molecular beam through the funnel, neutral molecules are ionized by the light source after graded gas extraction and pressure reduction, and ions are analyzed by the mass spectrometer. The device is used for research on product selectivity and reaction mechanism by spatial distribution of short-chain olefin prepared by Fischer-Tropsch synthesis, isomeride can be distinguished, axial species distribution can be accurately represented, and detection selectivity and reliability can be improved.

The application discloses a mobile sampling time-of-flight mass spectrometry detection device and application, and belongs to the technical field of mass spectrometry analysis. The device comprises the following: a reaction tube with an axial multi-sampling area, a sleeve pipe sleeved outside the reaction tube and provided with a quartz nozzle on the side wall, a moving mechanism for driving the sleeve pipe to move axially, a staged pumping mechanism comprising a funnel and a multi-stage turbo pump, a photoionization chamber provided with a synchrotron radiation vacuum ultraviolet light source, and a reflection type time-of-flight mass spectrometer. When working, the moving mechanism drives the sleeve pipe so that the quartz nozzle is aligned with the sampling area, gas forms an ultrasonic molecular beam through the funnel, neutral molecules are ionized by the light source after pressure reduction through the staged pumping, and the mass spectrometer analyzes ions. The device is used for researching spatial distribution of short-chain olefins prepared through Fischer-Tropsch synthesis, product selectivity and reaction mechanism, can distinguish isomers, accurately characterizes axial species distribution, and improves detection selectivity and reliability.

The application provides a method for preparing a magnetic semiconductor thin film, which comprises the following steps: (1) placing a polycrystalline magnetic semiconductor target into a thin film deposition chamber; (2) placing K single element and Mn single element as beam source materials into two beam source furnaces respectively; (3) cleaning a substrate, and then mounting the cleaned substrate on a substrate table; (4) then, heating the substrate table and the substrate; (5) controlling the air pressure of the thin film deposition chamber to be 6-100 Pa by means of a non-reactive gas, and then using a molecular beam assisted pulsed laser deposition method to epitaxially grow a thin film on the substrate; and (6) after the thin film is grown, adjusting the air pressure of the thin film deposition chamber and cooling the substrate, so as to obtain a magnetic semiconductor thin film (Ba 1‑x K x )(Zn 1‑y Mn y )2As2, wherein 0.08

The invention discloses a vacuum cavity system integrating double particle beams and a velocity imaging spectrometer and a method. The system comprises a vacuum cavity main body, a nano-particle beam source, an atom and molecule beam source, a speed imaging spectrometer, a laser transmission assembly and a synchronous control assembly, the nano-particle beam source and the atom-molecule beam source are respectively arranged on the vacuum cavity main body, particle beam paths are oppositely collinear, the axis of the speed imaging spectrometer is perpendicular to the particle beam paths and the laser transmission path in pairs, and the laser transmission assembly can be compatible with various optical wavebands and ultrashort laser pulses with femtosecond to attosecond magnitude pulse widths. The synchronous control assembly achieves cooperative work of all the components. According to the invention, ultrafast dynamic research on two different-scale particles of nanoparticles and atoms and molecules can be realized on the same device, frequent replacement of the device is not needed, the experimental efficiency is improved, the research cost is reduced, the accuracy and reliability of experimental data are ensured, and a comprehensive and efficient experimental platform is provided for ultrafast dynamic research.

The present application relates to the technical field of polymer-based materials, and particularly relates to a COF molecular beam belt reinforced wear-resistant polyimide material and a preparation method. The present application is based on the perspective of polymer chain structure, and a COF molecular beam belt is introduced to make the polymer chain penetrate the belt structure and form a pseudo-crosslinking point, i.e., a molecular beam belt polymer. The belt structure makes the polymer chain have flexible connection and winding points, and endows the polymer with enhanced breaking strength while dissipating internal stress to increase toughness. The method provided by the present application can realize the improvement of intrinsic properties of the polymer with a very small amount of COF molecular beam belt addition (mass ratio of 1.3 ten-thousandth).

The application relates to the technical field of heating tool, in particular to a preparation method of a heating body for a molecular beam source furnace, preparation of metal slurry and two ceramic green compacts; the metal slurry is printed on the surface of the first ceramic green compact to obtain a conductive circuit; the second ceramic green compact is laminated on the surface of the first ceramic green compact printed with the metal slurry to form a laminated body, the laminated body is rolled into a cylindrical shape and is hot-pressed by a hot press to obtain a first sample; the first sample is sintered to obtain the heating body; the heating wire does not need to be manually wound, the production is simple, mass production is suitable, and the production cost is effectively reduced.

This invention discloses an MBE (molecular beam epitaxy) source furnace and its thin film growth method, belonging to the field of semiconductor thin film preparation technology. The source furnace includes a gas mass flow controller, a plasma initiation device, a plasma generation cavity, and a plasma termination device connected sequentially along the beam direction. The outer wall of the plasma generation cavity is surrounded by a cross-distributed RF electrode system for efficient and uniform gas ionization. The plasma termination device is a double-layer batching disk structure used to shape the plasma into a uniform molecular beam. The method for growing thin films using this source furnace includes steps such as substrate heating, introduction of reactive gas, RF excitation to generate plasma, and beam application to the substrate for thin film growth. This invention effectively solves the problems of low ionization efficiency and non-uniform beam flow in traditional plasma sources, and is particularly suitable for the preparation of high-quality nitride and oxide semiconductor single-crystal thin films.

A multilayer molecular film photoresist is provided, which comprises a plurality of molecular beams arranged laterally above a substrate, each of which includes linearly linked monomolecules represented by the following Chemical Formula 1: JPEG2026506378000030.jpg11128In Chemical Formula 1, one of the *'s is a bond to a functional group in a lower monolayer, and the other is a bond to a functional group in an upper monolayer, OM is an organic monolayer, MM is a main inorganic monolayer containing a metal atom, m is 1 to 2, n is 1 to 2, and l is 1 to 1000.A lateral inorganic monolayer having a metal atom is located between the molecular beams and is bonded to the side of the organic monolayer (OM) in one of the molecular beams, and a crosslinkable functional group bonded to the side of the organic monolayer (OM) is located in the other molecular beam.

This invention provides a method for preparing LaBi(00l) single-crystal thin films using molecular beam epitaxy (MBE), belonging to the field of thin film preparation technology. The method involves heating a lanthanum (La) and bismuth (Bi) evaporation source to a certain temperature, then co-depositing the La and Bi molecular beams onto a Si(001) substrate heated to a certain temperature, thereby forming a LaBi thin film. Subsequently, the film is annealed while keeping the Bi evaporation source on, and then cooled to room temperature. The LaBi(00l) single-crystal thin film prepared by this method exhibits a [00l] orientation. The method provided by this invention offers controllable processes and good repeatability, providing an effective approach for preparing high-quality LaBi thin films.

The invention provides a vacuum-tight enclosure for a beam apparatus, a beam apparatus, and a method for manufacturing a vacuum-tight enclosure. The vacuum-tight enclosure is essentially formed of:a beam input interface for receiving a molecular or atomic beam,a first optical interaction volume,a microwave cavity comprising a U-shaped portion,a second optical interaction volume,a straight hollow beam enclosure for enclosing the molecular or atomic beam between the first optical interaction volume and the second optical interaction volume,anda vacuum source interface, anda plurality of optical port interfaces,such that a vacuum is generatable within the vacuum-tight enclosure when a vacuum source is vacuum-tightly attached to the vacuum source interface, a beam source container is vacuum-tightly attached to the beam input interface and the plurality of optical port interfaces are vacuum-tightly sealed.

This application discloses an adjustable ultrasonic molecular beam injection method and system. The method includes: receiving a target beam velocity command and determining a target temperature based on a pre-stored velocity-temperature mapping relationship associated with gas type and pressure; controlling a temperature control device to heat the nozzle acceleration structure and stabilizing its temperature at the target temperature through closed-loop temperature control; after temperature stabilization, controlling gas injection into the nozzle acceleration structure, which expands adiabatically through a Laval nozzle to form ultrasonic molecular beam injection plasma; measuring the actual beam velocity of the ultrasonic molecular beam and calibrating and updating the velocity-temperature mapping relationship based on the velocity deviation; wherein the nozzle acceleration structure is separately configured from the upstream molecular beam valve, and the two are connected by a thermally insulated connector, and gas is injected into the nozzle acceleration structure by controlling the molecular beam valve. This application can actively, efficiently, with a wide range, and precisely control the beam velocity, while ensuring the long-life operation of key components.

The invention discloses an ultrasonic molecular beam rapid profile prediction method and system based on pressure intensity, and the method comprises the following steps: obtaining the parameter distribution data of ultrasonic molecular beams under different gas source pressure intensity conditions, and constructing a training data set; building an artificial neural network model, taking the gas source pressure value and the space coordinate as model input, taking the parameter value at the corresponding coordinate point as model output, and carrying out learning training on the training data set to obtain a trained profile prediction model; and inputting a target gas source pressure intensity value to the trained section prediction model to obtain a final ultrasonic molecular beam rapid section prediction result. The complex nonlinear mapping relation between different gas source pressure intensities and ultrasonic molecular beam parameter distribution is learned by using the artificial neural network model, and a traditional calculation process depending on physical simulation is converted into a model prediction process of one-time training and multiple-time rapid reasoning, so that the prediction accuracy is ensured, and the prediction efficiency is improved. And rapid calculation of profile distribution is realized.

The application belongs to the technical field of evaporation, and discloses an evaporation device and an evaporation method. The evaporation device comprises an evaporation assembly, which is arranged above a substrate to be evaporated in use. The evaporation assembly comprises an upper top plate, a bottom evaporation plate and a side plate, and the upper top plate, the side plate and the bottom evaporation plate form a closed structure. The evaporation assembly further comprises a plurality of containers for placing evaporation materials. The evaporation assembly further comprises a first heating assembly for heating the evaporation materials in the containers. The bottom evaporation plate comprises oppositely arranged first and second plate materials, and the bottom evaporation plate is reversible, so that the first and second plate materials can alternately receive the evaporation materials. The device adopts a planar evaporation source to generate a vertically collimated molecular beam, which can improve the utilization rate of the materials and the deposition uniformity, and is conducive to obtaining a film without holes, uniform thickness and uniform composition. The device can be used in cooperation with a vacuum pump to make the substrate in a high vacuum state, reduce the deposition temperature, and reduce the thermal damage and chemical corrosion of the substrate.

The application discloses a kind of in-situ molecular beam velocity adaptive measurement system and method in plasma, the system includes position scanning injection module, the configurable scanning of supporting multiple scanning modes;Signal monitoring module, characteristic radiation signal is collected using optical system and is transmitted to processing control module;And, processing control module is used for synchronous control position scanning injection module scanning injection and signal monitoring module signal acquisition start, and simultaneously collect the injection control signal of position scanning injection module and the characteristic radiation signal of signal monitoring module, record time series data and carry out fitting analysis and derivation calculation according to time series data and obtain the instantaneous velocity corresponding to each scanning position.The application directly measures the characteristic signal of molecular beam and plasma interaction in plasma environment, without arranging additional detection points in vacuum chamber, and the measurement result reflects the real velocity of molecular beam under actual working condition, avoiding the deviation of non-in-situ measurement.

The application provides a molecular beam source furnace for dynamically controlling source flow, which is sequentially provided with a bottom layer source evaporation pre-heating device, an intermediate layer dynamic temperature compensation heating device and a top layer beam flow high-low temperature heating device from bottom to top of a source material container. Each layer respectively heats the source material. According to the epitaxial growth rate of the material, the power of the bottom layer source evaporation pre-heating device is reasonably set; and according to the material component or material doping change, the power of the intermediate layer dynamic temperature compensation heating device and the top layer beam flow high-low temperature heating device is reasonably adjusted, so as to solve the problem of rapidly and dynamically adjusting the doping metal source flow in a molecular beam epitaxial growth system.

The invention discloses a single quantum state molecular beam preparation system, device and method.The system comprises a molecule excitation module and a laser output module, the molecule excitation module comprises a gas inlet pipeline and a molecular beam valve, and the gas inlet pipeline is used for injecting gas molecules to be excited into the molecular beam valve; the molecular beam valve is used for reducing gas molecules in various quantum states into ground states to obtain ground state molecular beams; the laser output module comprises a laser source assembly and a cylindrical convex lens, the laser source assembly is used for outputting continuous laser, the continuous laser passes through the cylindrical convex lens to obtain fan-shaped excitation laser, and the excitation laser is perpendicular to the flight direction of the ground-state molecular beam and intersects with the ground-state molecular beam. The photon energy and the molecular absorption energy level of the excitation laser intersect in time, the laser energy is not zero, the adiabatic excitation condition is met, and the excitation efficiency approaches 100%, so that adiabatic excitation is carried out by using the continuous laser, and efficient excitation is realized in a continuous spatial domain. The method is suitable for the technical field of molecular beam preparation.