303 results about "Molecular beam" patented technology

There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.

Systems and methods for providing in situ, controllably variable concentrations of one, two or more chemical components on a substrate to produce an integrated materials chip. The component concentrations can vary linearly, quadratically or according to any other reasonable power law with one or two location coordinates. In one embodiment, a source and a mask with fixed or varying aperture widths and fixed or varying aperture spacings are used to produce the desired concentration envelope. In another embodiment, a mask with one or more movable apertures or openings provides a chemical component flux that varies with location on the substrate, in one or two dimensions. In another embodiment, flow of the chemical components through nuzzle slits provides the desired concentrations. An ion beam source, a sputtering source, a laser ablation source, a molecular beam source, a chemical vapor deposition source and/or an evaporative source can provide the chemical component(s) to be deposited on the substrate. Carbides, nitrides, oxides halides and other elements and compounds can be added to and reacted with the deposits on the substrate.

The invention provides a mass spectrometric method for analyzing a sample in a solution, including the steps of directing a flow of a solution containing sample compounds to be analyzed towards a supersonic nozzle having an input end and an output end; vaporizing the solution and sample prior to its expansion from the output end of said supersonic nozzle; allowing expansion of the vaporized sample and solution from said supersonic nozzle into a vacuum system, forming a supersonic molecular beam with vibrationally cold sample molecules; ionizing the vaporized sample compounds with electrons while contained as vibrationally cold molecules in said supersonic molecular beam; mass analyzing the ions formed from said sample compounds; detecting said ions formed from said sample compounds after mass analysis, and processing the data obtained from the resulting mass spectral information, for identifying and/or quantifying the chemical content of said sample. The invention also provides apparatus for analyzing a sample in a solution.

The invention relates to an ultraviolet detector, in particular to a visible-blind ultraviolet detector based on a Beta-Ga2O3/SiC heterojunction thin film and a fabrication method of the visible-blind ultraviolet detector. According to the fabrication method, a layer of Beta-Ga2O3 thin film is deposited on an n-type 6H-SiC substrate by a laser molecular beam epitaxial technique, and then a layer of Ti/Au thin film is deposited on the n-type 6H-SiC substrate and the Beta-Ga2O3 thin film through a mask by a radio frequency magnetron sputtering to be used as an electrode. The fabricated visible-blind ultraviolet detector has the advantages of stable performance, response sensitivity, small dark current and high potential application; and moreover, the fabrication method has the characteristics of high process controllability, simplicity in operation, high universality, restorability of repeated test and the like, and has great application prospect.

The invention discloses a method to produce IV-VI semiconductor single-crystal thin film and the hetero-structure thereof. Under the condition of accurately controlled ultra-high vacuum, IV-VI atom and molecular beams vaporized from a beam source furnace encounter a clean single-crystal liner surface with good crystal surface orientation, and atom and molecular reaching the surface of the liner form high-quality single-crystal thin film after processes such as attachment, transition, and crystallization on the surface of liner. Through the accurate control of growth conditions, such as beam runoff and linear temperature, extended IV-VI compounds grow on the surface of linear by a molecular layer and a molecular layer. The method can grow IV-VI semiconductor hetero-structures, including quantum-well and super-lattice. The production cost is low, and the quality is high.

The invention discloses a platinum diselenide crystal material and a preparation method thereof. The preparation method comprises the following steps: 1) under a vacuum environment, evaporating and depositing a proper amount of high purity selenium on a metal platinum substrate; and 2) carrying out an annealing treatment, so that selenium atoms covering the surface of the substrate and platinum atoms on the substrate interact to form a two-dimensional ordered crystalline state membrane structure in a sandwich arrangement of selenium-platinum-selenium so as to obtain the platinum diselenide crystal material. The inorganic two-dimensional crystalline state material is a new member of a transitional metal disulfide compound family, expands the field of research on non-carbon based two-dimensional crystal materials, and has a wide application potential in future information electronics and apparatus development and research. According to the method disclosed by the invention, the platinum diselenide two-dimensional crystalline state material with a big area and a high quality is grown on a molecular beam epitaxial method, so that the electronic properties of the platinum diselenide crystalline state material and related applications and development are favorably researched.

The invention provides a method for preparing an IV-VI semiconductor single crystal thin film on a CdZnTe substrate, wherein, in a molecular beam epitaxy(MBE) device, by adopting an MBE growth method and utilizing molecular beam sources of different IV-VI compounds and under different growth temperatures(200 to 425DEG C), the single crystal thin film is epitaxially grown on the CdZnTe single crystal substrate materials; the CdZnTe substrate has a general formula of Cd1-xZnxTe, wherein X is equal to 0 to 0.3; the single crystal thin film grows by the vertical Bridgman method or vapor transport method, is cut along the (111) crystal orientation or (100) crystal orientation, is mechanically polished by Al2O3 powder and then is chemically polished by the bromine-methanol, the concentration of which is 1 percent. The method for preparing an IV-VI semiconductor single crystal thin film on a CdZnTe substrate has the advantages of being capable of realizing the controllable growth of device structures such as hetero junction, quantum well and superlattice, etc.

The present invention discloses an in-situ osteoplastic active calcium phosphate cement and its preparation process and application. Sodium alginate, collagen, hydrocellulose, polypeptide molecular beam, etc. are used to embed BMP, FGF, TGF-beta and other composite to maintain the activity of bioactive factor. Embedded bioactive factor is made to compound with CPC powder and mix with curing liquid to form paste capable of being moulded at will and self hardened in human body environment and humidity. Inside body, the bioactive factor can induce formation of blood vessel and new bone, formation of active tissue and functional reconstruction. The used CPC cured body may be used as calcium source and phosphorus source for forming new bone and speeding bone tissue formation. The present invention is applied for filling and repairing of bone.

Here is disclosed a method for generation of a molecular beam from a sample solution, comprising steps of operating a spray-in device to introduce the sample solution in atomized state into a spray chamber, impinging a suitable gas on the sample solution in atomized state or heating the sample solution in atomized state to generate solute molecules deprived of solvent molecules, and then ejecting these solute molecules through an orifice into a low air pressure chamber. The apparatus as well as the method according to the present invention enable to generate a molecular beam for a variety of molecules, particularly for the neutral molecules which can be decomposed by heating at a high temperature or those which can not be sublimated or vaporized even by heating at a high temperature, as long as the sample solutions are prepared. Due to the method as well as the apparatus according to the invention, it is possible to conduct the mass spectroscopy studies and also other spectroscopic analyses about the molecules and the molecular clusters containing in the molecular beam generated in this manner, for example, by irradiating laser beams. It is possible to also possible to deposit the molecules on a substrate.

The invention discloses a method for preparing a cuprous oxide film. The method comprises the following steps: step (1), selecting a monocrystal substrate and carrying out cleaning, and then introducing the cleaned monocrystal substrate into an ultrahigh vacuum film preparation system; step (2), carrying out heat treatment on the monocrystal substrate under the ultrahigh vacuum situation so as to remove surface impurities thereof; step (3), depositing a Cu film on the substrate surface processed in the step (2) under the condition that the air pressure is less than or equal to 10<-8>mbar, wherein the temperature of the substrate is in a range from 0 DEG C to 700 DEG C; step (4), carrying out oxidation treatment on the Cu film by utilizing radio frequency oxygen plasma; and step (5), carrying out annealing for 10 to 30 mins at the temperature of 600 to 900 DEG C and then reducing the temperature to a room temperature and taking the film out. According to the invention, growth of the Cu film with high quality is realized by utilizing an ultrahigh vacuum molecular beam epitaxial technology and a strong oxidizing property of an active oxygen atom. And the prepared Cu2O monocrystal film is expected to be applied in fields including a solar thin-film cell and an optoelectronic device and the like.

The invention discloses a molecular four-dimensional imaging system based on femtosecond electron diffraction. The molecular four-dimensional imaging system comprises a femtosecond electronic gun system, an ultrasonic molecular beam system, a sample room, an ion velocity imaging system, a vacuum system and a relevant correction regulating system. Femtosecond electronic impulse is obtained by high-voltage electrode acceleration and magnetic lens focus; and direct and real-time molecular diffraction images can be obtained by the action of the electronic impulse and ultrasonic molecular beams. Auxiliary analysis information such as velocity distribution and angular distribution parameters of dissociation fragments can be obtained by integrating ion velocity imaging technology, so that electronic diffraction images of complicated molecular dynamic processes can be analyzed and identified better. The four-dimensional imaging system has relatively high time resolution capability and spatial resolution capability, can analyze four-dimensional dynamic images with femtosecond time resolution and atomic-scale spatial resolution conveniently under the assist of the ion velocity imaging technology.

The invention relates to a device for in-situ detection of catalytic reaction intermediates and products, including a tubular catalytic reactor, a catalytic reaction chamber pressure control system, a sampling cone, an ionization chamber, a mass analysis system, and a vacuum system; The catalytic reactor includes a catalytic reaction chamber and a hollow reaction tube, both of which communicate with each other; the sampling cone is in the shape of a hollow cone, coaxially arranged with the hollow reaction tube, and the cone mouth is aligned with the outlet of the hollow reaction tube; the sampling cone and the ionization The cavity is connected, and the ion focusing electrostatic lens of the mass analysis system is set in the ionization cavity; the molecular beam enters the ion focusing electrostatic lens through the sampling cone, and completes ionization under the action of the ionization source, and enters the mass In-situ detection in the analysis system; the catalytic reaction chamber pressure control system controls the pressure in the catalytic reaction chamber; the vacuum system pumps the pressure in the catalytic reaction chamber, ionization chamber, and mass spectrometer of the mass analysis system respectively. vacuum.

The invention relates to an ultraviolet/solar blind ultraviolet two-color detector, in particular to a monolithically-integrated multi-functional ultraviolet/solar blind ultraviolet two-color detector and a fabrication method thereof. A layer of gallium oxide thin film is deposited on a silicon carbide substrate by a laser molecular beam epitaxial technology, and then a layer of titanium/gold thin film is deposited on the silicon carbide substrate and the gallium oxide thin film by a mask plate through a radio frequency magnetron sputtering technology to be used as an electrode. The monolithically-integrated multi-functional two-color ultraviolet detector fabricated according to the method has the advantages of reaction sensitivity, performance stability and low dark current, the functions of ultraviolet flame detection and ultraviolet intensity detection of a solar blind region can be separately achieved in different voltage modes, and the monolithically-integrated multi-functional two-color ultraviolet detector can be used for detecting fire alarm, high-voltage line corona and solar ultraviolet intensity; and moreover, the fabrication method has the characteristics of high process controllability, high universality, restorability of repeated tests and great application prospect, and is simple to operate.

The invention provides a molecular beam epitaxy (MBE) growing method of a high-speed vertical-cavity surface-emitting laser. The method comprises the steps that deoxidation pretreatment is conducted on a GaAs substrate, and epitaxial growth of a GaAs buffer layer, a lower DBR, an active region, an oxidation confinement layer and an upper DBR is sequentially achieved; in the growth process, the active region is clamped between the upper DBR and the lower DBR, and a delta-doping method is adopted by the potential barrier middle position of the active region, wherein a doping source adopts carbon (C), and growth is stopped for a period of time under the protection of As after delta-doping is completed. By means of the method, the technical problems of reducing a threshold, increasing differential gain and reducing nonlinear gain compression are solved, and the good effects of reducing optical losses, decreasing line width and increasing output power and intrinsic bandwidth are achieved.

There is provided a mass spectrometric based method for sample identification, including the steps of introducing sample compounds into a vacuum chamber of a mass spectrometer in a seeded supersonic molecular beam, ionizing with electrons the sample compounds, being vibrationally cold molecules, in the supersonic molecular beam during their flight through an electron ionization ion source, mass analyzing the ionized sample compounds with a mass analyzer of a mass spectrometer to obtain a mass spectrum of at least one compound in the sample, identifying the molecular ion group of isotopomers in the mass spectrum, generating various molecular elemental formulas from the identified molecular ion and a pre-allocated list of elements, reducing the number of the molecular elemental formulas by the incorporation of chemical valence considerations and constraints, calculating isotope abundances for the generated elemental formulas, comparing the calculated isotope abundances with the experimentally obtained mass spectral isotope abundance, and listing the generated elemental formulas according to their degree of matching to the experimentally obtained mass spectral isotope abundance.