2results about How to "Avoid premature breakdown" patented technology

The utility model relates to an environmental protection type high pressure pulse line explosion type selective crushing device, include: pressure increasing device, energy storage device and discharge device, pressure increasing device is equipped with AC transformer, and energy storage device and discharge device are connected with AC transformer, discharge device includes control unit and electrode system that are connected in proper order in series, and control unit and electrode system all are connected with energy storage device, the utility model has the beneficial effect that: electrode top is hemispherical or conical, reduces the local concentration of electric field, prevents early breakdown, through electrode insulation design and sealing system, effectively prevent electrode from being eroded by vaporized metal wire, prolongs the service life of equipment, and simultaneously operating process is no dust, low noise, no harmful gas emission, accords with environmental protection requirement.

This invention provides a high-voltage enhancement-mode HEMT device that suppresses current collapse, comprising a substrate, a GaN layer, and an Al layer. x Ga 1‑x N layer, Al x Ga 1‑x From left to right, the N-layer consists of a source, a P-GaN gate, a P-GaN hole injection structure, and a drain. A high-resistivity capping layer covers the P-GaN gate, gate metal, P-GaN hole injection structure, the upper surface of the drain, and the Al layer between the P-GaN gate source side and the drain. x Ga 1‑x In the upper surface region of the N-layer, the hole injection structure in this invention can be sufficiently close to the gate, allowing for more complete surface trap recombination. Simultaneously, it avoids long-distance surface charge transport, resulting in faster surface charge transfer and improved surface trap recombination efficiency, achieving the optimal hole injection effect. This invention suppresses current collapse without shortening the device drift region, thus avoiding a decrease in device breakdown voltage.