PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof

Abstract

The invention discloses a PIN structural ultraviolet photoelectric detector for avalanche and a preparation method of the PIN structural ultraviolet photoelectric detector. According to the PIN structural ultraviolet photoelectric detector, an extended p type GaN light doped protective ring under regional selective growing is adopted to reduce the current leakage of the detectora and suppress the edge from being punctured in advance, so as to achieve stable and high-gain ultraviolet photoelectric detecting on the avalanche. With adoption of the p type GaN light doped protective ring, the current leakage on the surface of the detector can be reduced, an electric field at the edge of the detector can be reduced, especially a high electric field area in the p-i node part is obviously improved, thus, the puncturing voltage of the detector can be increased, and high-performance ultraviolet photoelectric detector for avalanche can be obtained. By adopting the regional selective secondary growing technology, complex processes and expensive equipment for pouring ion can be saved, and the positions of the protective ring and an active area can be accurately controlled.

Description

technical field [0001] The invention relates to the technical field of ultraviolet detectors and preparation methods thereof, in particular to a PIN structure ultraviolet avalanche photodetector with a region selective growth protection ring and a preparation method thereof. Background technique [0002] Ultraviolet photodetectors work in the ultraviolet band, have a natural low-noise background, and can achieve high signal-to-noise ratio detection. They are widely used in military and civilian flame detection, plume smoke detection, environmental monitoring, space optical communication, quantum communication, etc. field. [0003] Group-III nitride materials, also known as gallium nitride GaN-based materials (including AlInGaN, AlGaN, AlInN, GaN and InGaN), belong to the third generation of compound semiconductor materials and are new types of electron and optoelectronic detector materials. Since the forbidden band width of AlN is 6.2eV, that of InN is 0.7 eV, and that of G...

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Problems solved by technology

However, the use of diffusion process will bring about the problems of not steep diffusion junction interface and uncertain junction position, so that the position of the active region cannot be accurately controlled, and the next step of ohmic contact is difficult to achieve; and the guard ring formed by ion implantation method also has ion implantation The depth and width cannot be precisely controlled, and the required process equipment is also very expensive

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