36results about How to "Reduce dark current" patented technology

The embodiment of the present application discloses an image sensor and an electronic information device for improving full well capacity. The image sensor comprises: a photodiode formed in a semiconductor substrate; the photodiode comprises at least a first doped layer, a second doped layer and a columnar third doped region; the second doped layer wraps the side and bottom of the third doped region; the first doped layer wraps the side and bottom of the second doped layer; the first doped layer and the second doped layer form a first lateral PN junction; the second doped layer and the third doped region form a second lateral PN junction; wherein the first doped layer and the third doped region have the same conductivity type, and the conductivity type is opposite to that of the second doped layer. The embodiment of the present application replaces the central part of the photodiode with a columnar ion doped region (for example, a P-type layer), so that the image sensor with the epitaxial structure can effectively improve the full well capacity, effectively reduce the depletion potential of the center of the photodiode, avoid the occurrence of lag, and reduce the dark current.

This invention discloses a deep trench isolation structure for a CIS (CMOS Image Sensor), comprising: a deep trench formed by plasma etching of a first surface of a first semiconductor substrate, wherein the inner surface of the deep trench has interface defects generated by plasma etching; a first semiconductor epitaxial layer, a second dielectric layer, and a third conductive material layer formed in the deep trench; and a fourth conductive material layer formed in a portion of the deep trench closest to the peripheral region; the fourth conductive material layer being connected to an external electrode; the external electrode being connected to an external control module, which provides an external voltage to each of the third conductive material layers to modulate the interface states of the inner surface of the deep trench, thereby eliminating the adverse effects of interface defects on the interface states. This invention also discloses a method for manufacturing the deep trench isolation structure for a CIS. This invention can modulate the interface states at the interface between the deep trench isolation structure and the semiconductor substrate, optimizing the interface states and thereby reducing dark current and white pixels.

The application discloses a kind of image sensor preparation method and image sensor, belong to semiconductor technical field.The application is formed P-type heavily doped region below floating diffusion portion, make the depletion region of P-type heavily doped region and N-type lightly doped region below floating diffusion portion from the original four square trapezoidal curve as half moon type, make the area of this depletion region fall in shallow trench isolation structure smaller, achieve the purpose of reducing dark current.At the same time, by etching and low-temperature epitaxial growth process, the diffusion of P-type heavily doped region is limited, so that the P-type heavily doped region is limited in the area away from the shallow trench isolation structure, and the lateral area of P-type heavily doped region is smaller than N-type lightly doped region.Because the electric field of P-type heavily doped region in vertical direction is much stronger than the electric field in horizontal direction, so as to reduce the electric field intensity in horizontal direction close to the shallow trench isolation structure, so that the defects capable of playing the role of recombination center can absorb relatively less electrons or holes than the original structure, thereby achieving the effect of reducing dark current.

The invention discloses a PIN photoelectric detector based on epitaxial Ge on Si and a preparation method, and relates to the technical field of semiconductor photoelectric devices. The intrinsic Ge epitaxial layer is positioned on the upper surface of the N-type Si substrate; the P-type Ge region is positioned in the intrinsic Ge epitaxial layer and is close to the upper surface of the intrinsic Ge epitaxial layer; the first metal electrode and the second metal electrode are in ohmic contact with the P-type Ge region and the N-type Si substrate respectively. The intrinsic Ge layer is epitaxially grown on the N-type Si substrate to serve as an absorption region, a Si / Ge heterojunction PIN structure is constructed, and reverse injection of carriers is effectively inhibited by utilizing an energy band potential barrier of the Si / Ge heterojunction, so that the dark current of the device is remarkably reduced. Meanwhile, by accurately controlling the thickness of the intrinsic Ge epitaxial layer, the bandwidth and the responsivity of the device can be flexibly balanced so as to meet the requirements of different application scenes such as high-speed communication or high-sensitivity detection.

The invention provides a preparation method of a tin-doped scaly nano gallium oxide thin film solar blind ultraviolet photoelectric detector. The preparation method comprises the following steps: carrying out cleaning pretreatment on a single crystal GaN substrate; depositing an Au thin film on the pretreated single crystal GaN substrate to serve as a catalyst layer; the preparation method comprises the following steps: mixing Ga2O3, diamond and SnO2 powder according to a certain mass ratio to prepare a precursor; putting the single crystal GaN substrate deposited with the Au thin film and a precursor into a CVD furnace, and growing according to preset gas flow, pressure intensity, reaction temperature and reaction time to obtain a tin-doped scaly nano gallium oxide thin film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide thin film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method. The conductivity of the thin film is improved through tin doping, the specific surface area and light absorption are increased through the scaly nanostructure, high-performance deep ultraviolet photoelectric detection is achieved, and the technical problem that in the prior art, the dark current of a device is high is solved.

The utility model discloses an InAs / GaSb superlattice medium / long wave double-color infrared detector based on an nBn structure, which belongs to the technical field of optoelectronic devices and comprises a GaSb substrate, a non-doped GaSb buffer layer, a 14ML InAs / 7ML GaSb superlattice Si doped layer, a 14ML InAs / 7ML GaSb superlattice unintentional doped layer, a 4ML InAs / 7ML GaSb superlattice unintentional doped layer, a 8ML InAs / 6ML GaSb superlattice unintentional doped layer and a 8ML InAs / 6ML GaSb superlattice Si doped layer which are sequentially arranged from bottom to top. The medium / long wave absorption layers of 14ML InAs / 7ML GaSb superlattices and 8ML InAs / 6ML GaSb superlattices are combined, so that high absorption efficiency and low crosstalk of medium / long wave band response are realized, and low dark current and wide temperature range working capability are realized.

This invention discloses a single-pixel reconfigurable dual-mode phototransistor and its fabrication method, along with a pixel array and image edge extraction method. Different polarities are applied to the single-pixel reconfigurable dual-mode phototransistor. Based on a floating base region photogenerated charge accumulation—barrier modulation—transistor gain—Schottky junction photosensitive coupling mechanism, the same pixel switches between two operating modes. Mode one is a switching mode with low dark current and a high on / off ratio threshold triggering function; mode two is a linear mode with a linear analog response and current gain. Utilizing this dual-mode operating mechanism, a sparse operator image edge extraction method of "first screening, then precise measurement" is implemented, reducing system computation and readout overhead at the device level.

The present application relates to a kind of new near hemispherical probe and its preparation method, the near hemispherical probe can retain the excellent electrical characteristics of three-dimensional spherical structure, the area of collection electrode is small under the same electrode spacing, and the capacitance is low, and charge collection efficiency is almost independent of θ.Hemispherical electrode has good sealing, completely isolates detection sensitive area from substrate, dark current is not affected by wafer thickness, and extremely low noise is conducive to low-energy X-ray or low-energy particle detection.

The invention discloses a mesa type PIN photoelectric detector based on epitaxial Ge on Si and a preparation method, and relates to the technical field of semiconductor photoelectric devices. The detector comprises an N-type silicon Si substrate, a mesa structure formed by an intrinsic Ge layer and a P-type heavily-doped Ge layer which are sequentially and epitaxially arranged on the N-type silicon Si substrate, a passivation layer covering a mesa, and a metal electrode respectively connected with the P-type heavily-doped Ge layer and the N-type silicon Si substrate. According to the invention, the size of a germanium active region is greatly reduced by adopting a structure that a thin layer Ge is extended on the Si substrate and mesa isolation is combined, and generation and recombination of carriers are inhibited by cooperation of a Si / Ge heterojunction and side wall passivation, so that the dark current of the device is remarkably reduced. Meanwhile, by accurately controlling the thickness of the intrinsic Ge layer, flexible optimization can be carried out between high responsivity and high bandwidth, and the requirements of different near-infrared application scenes are met.

The invention discloses an X-ray detector for growing perovskite single crystals based on a 2-methoxyethanol and acetonitrile mixed solvent system and a preparation method thereof, and belongs to the technical field of X-ray detectors. The X-ray detector is composed of a perovskite single crystal and gold electrodes or carbon electrodes, wherein the perovskite single crystal grows through a 2-methoxyethanol and acetonitrile mixed solvent system, and the gold electrodes or the carbon electrodes are located on the two sides of the perovskite single crystal. Based on the fact that 2-methoxyethanol basically has no residue in the perovskite single crystal and the addition of acetonitrile breaks the internal hydrogen bond network of 2-methoxyethanol and enhances the solute transport characteristic, the MAPbI3 single crystal grown by the inverse temperature growth method has ultra-low defect state density, so that the dark current and noise of a detector can be remarkably reduced; and meanwhile, excellent X-ray sensitivity and low dose detection lower limit are obtained, and the obtained X-ray detector realizes high sensitivity and low dark current under small voltage and has very good stability in a state of continuously working for more than 15 hours.

This invention provides materials for photoelectric conversion elements, which facilitate the fabrication of photoelectric conversion elements with low dark current, high external quantum efficiency, and excellent responsiveness. This invention uses photoelectric conversion element materials containing a fused-ring compound represented by the following formula (1). In formula (1), ring A represents the structure represented by the following formula (2); R 1 ~R 8 Each of the following groups independently represents a hydrogen atom, an alkyl group with 1 to 18 carbon atoms (with or without substitution), an alkenyl group with 1 to 18 carbon atoms, a cycloalkyl group with 1 to 18 carbon atoms, a bicycloalkyl group with 1 to 18 carbon atoms, a tricycloalkyl group with 1 to 20 carbon atoms, an aromatic hydrocarbon group with 6 to 30 carbon atoms (with or without substitution), a heteroaryl group with 3 to 30 carbon atoms (with or without substitution), or -NR. 21 R 22 OR 23 .

The application relates to the technical field of semiconductor optoelectronic devices, in particular to a matrix-integrable structure of a high-speed InGaAs PD detection chip and a preparation method thereof. The structure comprises a semi-insulating InP substrate, a first n-InP layer, an intrinsic InGaAs layer and a p+ InP layer which are sequentially formed on the substrate, a photosensitive surface region is arranged in the p+ InP layer, the p+ InP layer outside the photosensitive surface region is removed, and the intrinsic InGaAs layer is exposed, a second n-InP layer is formed on the exposed intrinsic InGaAs layer through secondary epitaxy, and the second n-InP layer is electrically connected with the first n-InP layer. The application limits the PN junction in the photosensitive surface through secondary epitaxy, significantly reduces the capacitance to 0.05 pF, the dark current is less than 50 pA, the responsivity is higher than 0.95 A / W, and the matrix integration is easy to realize, and the application is suitable for high-speed optical communication above 50G.

This invention provides an n-type digital alloy material for the multiplication region of an avalanche photodiode and its preparation method. The digital alloy material comprises: a superlattice structure matching the crystal lattice of an InP substrate; the superlattice structure is formed by repeated stacking of single periodic units; each periodic unit comprises a layer, a first GaAsSb layer, an n-type Si-doped GaAsSb layer, and a second GaAsSb layer stacked sequentially; wherein the value of x ranges from 0.75 to 0.85; the thickness ratio between the layer, the first GaAsSb layer, the n-type Si-doped GaAsSb layer, and the second GaAsSb layer in a single periodic unit is 22:1:10:1. The digital alloy material and its preparation method provided by this invention can solve the problems of low n-type carrier concentration and narrow application range of n-type alloy materials in the multiplication region of avalanche photodiodes.

This invention provides a prototype infrared detector with integrated metalens, its fabrication method, and an optoelectronic instrument. The prototype infrared detector with integrated metalens, its fabrication method, and the optoelectronic instrument of this invention offer an effective and feasible solution for the industrialization of infrared detectors with integrated metalens, and are beneficial to the development of optoelectronic devices. The prototype infrared detector with integrated metalens of this invention has the advantages of miniaturization and high performance, and is expected to be widely used in scenarios such as integrated miniaturized infrared detection and infrared detection in low-light environments.

The present invention aims to provide a self-driven broadband photodetector and its fabrication method, belonging to the field of photodetector technology. In this detector, one side of a narrow-bandgap two-dimensional semiconductor is in contact with a metal, and the other side is in contact with a two-dimensional semi-metal, thereby constructing good asymmetric Schottky and Ohmic contacts on both sides of the narrow-bandgap two-dimensional semiconductor. This structure achieves a wide detection spectral range from visible light to infrared light and high photodetector performance without the need for external power supply, and the device exhibits a low dark current at zero bias, reaching 10-1. ‑13 A, which also has high responsiveness.

This invention discloses a method for fabricating a porous GaN-based N-doped gallium β-oxide solar-blind detector, comprising the following steps: Step 1, growing an n-GaN thin film on a first substrate, and electrochemically etching the n-GaN thin film in an electrolyte to prepare nanoporous GaN; Step 2, using the nanoporous GaN as a second substrate, growing an N-doped gallium β-oxide thin film to prepare a nanoporous GaN-based N-doped gallium β-oxide thin film, and annealing it in an atmosphere; Step 3, depositing alloy electrodes on the nanoporous GaN-based N-doped gallium β-oxide thin film to prepare a porous GaN-based N-doped gallium β-oxide solar-blind photodetector. This invention also discloses a porous GaN-based N-doped gallium β-oxide solar-blind detector. This invention solves the key common problems in the prior art, such as high stress in gallium β-oxide thin films, poor crystal quality, and large dark current and slow photoresponse speed in gallium β-oxide solar-blind detectors.

This invention relates to the field of semiconductor technology, specifically to a semiconductor structure and its manufacturing method, comprising: providing a substrate, the substrate including a first region and a second region arranged side by side; sequentially growing a pad oxide layer and a pad nitride layer on the substrate; forming a first shallow trench in the first region and a second shallow trench in the second region, the second shallow trench being arranged side by side with the first shallow trench, and the depth of the second shallow trench being greater than the depth of the first shallow trench; etching away the pad nitride layer; growing and forming a compensation nitride layer on the surface of the pad oxide layer, the inner wall of the first shallow trench, and the inner wall of the second shallow trench; filling the first shallow trench and the second shallow trench with an insulating medium; and performing planarization treatment on the insulating medium so that the surface of the insulating medium is flush with the surfaces of the compensation nitride layers on both sides. This can optimize the electrical performance of the pixel area and improve chip yield.

This invention relates to an npn-type solar-blind ultraviolet detector using Ga2O3 as the light-absorbing layer and its fabrication method. The detector, from bottom to top, comprises a GaN substrate, a CuI hole transport layer, a Ga2O3 solar-blind ultraviolet absorption layer, a Ti electrode layer, and an Au electrode layer. An In electrode layer is disposed on one side of the CuI hole transport layer on the GaN substrate. This invention uses n-GaN, which has high electron mobility, good thermal stability, and a mature fabrication process, as the bottom substrate; p-CuI, with high hole concentration, high mobility, and excellent p-type conductivity, and good energy level matching with n-GaN and subsequent materials, as the hole transport layer; and n-Ga2O3, with an ultrawide bandgap, high chemical stability, and a high absorption coefficient for solar-blind ultraviolet light, as the light-absorbing layer. Combining the low contact resistance of the bottom In electrode with the high contact area of ​​the top Ti / Au interdigitated electrode improves carrier collection efficiency.

The present application relates to a silicon-based detector, which designs and processes the p+ injection area of the device without changing the thickness of the substrate, and performs carbon injection, increases the area of generating electron-hole pairs and avalanche effect, thereby increasing the breakdown voltage of the device and improving the anti-radiation performance of the device. In addition, the present application introduces a deep trench ring isolation structure. Compared with the traditional silicon-based detector, the protection ring does not need to be obtained by ion implantation, the influence of the edge electric field on the performance of the device is reduced, and the dead area can be smaller when the array is formed, the integration density is improved, and the detection efficiency is improved. The present application also relates to a preparation method of the silicon-based detector.

An organic optoelectronic component, wherein the active layer comprises a conjugated polymer material with a structure of formula 1: wherein X 1 With X 2 Independently selected from one of the following groups: N, CH and -CR 1 A 2 and A 3 It is an electron-withdrawing group, and A 2 and A 3 Not at the same time as A 1 Same. D 1 D 2 and D 3 For electron-donating groups. sp 1 to sp 6 It is independently selected from aromatic and heteroaryl groups. a, b, and c are all real numbers, and 0

The invention discloses a PN junction detector based on an N-type germanium substrate and a preparation method, and relates to the technical field of microelectronics, and the PN junction detector comprises an N-type Ge substrate, a P-type Ge region formed in the substrate, a P + ohmic contact region located on the surface of the P-type Ge region, an N + ohmic contact region located on the bottom surface of the substrate, and corresponding metal electrodes. According to the detector, a longitudinal PN junction and a double heavily doped contact structure are adopted, near-infrared light is fully absorbed by using a body germanium substrate, and high responsivity is realized; and meanwhile, an electric field is built in the PN junction to effectively separate photon-generated carriers, so that the dark current is obviously reduced, and the detection sensitivity is improved. The preparation technology of the PN junction detector is compatible with the silicon-based CMOS technology, a complex epitaxial process is not needed, and the PN junction detector has the advantages of being low in cost and high in integration degree and is particularly suitable for near-infrared detection application in the fields of optical communication, sensing and imaging.

The application discloses a visible light detector and a preparation method thereof. The structure of the visible light detector comprises InGaN nanorods grown on a silicon substrate, a first metal electrode located on the silicon substrate, a mixed solution of gold nanoparticles and PEDOT:PSS covering the surface of the InGaN nanorods, and a second metal electrode located on the InGaN nanorods covered with the mixed solution of gold nanoparticles and PEDOT:PSS. The introduction of PEDOT:PSS can effectively passivate the surface state of the InGaN nanorods and reduce the dark current. The introduction of gold nanoparticles can induce surface plasmon effect and improve the light response current. Compared with the detector without the mixed solution of gold nanoparticles and PEDOT:PSS, the detector has higher photoelectric current and lower dark current. The application has the advantages of low cost, excellent performance and simple preparation, and the visible light detector and the preparation method thereof can be applied to the field of visible light communication.

A single-phase oxide ferroelectric semiconductor thin film with low dark current and high UVC / UVA ratio, a preparation method and application in a self-powered solar blind detector belong to the technical field of semiconductor detectors.The single-phase oxide ferroelectric semiconductor thin film is composed of a ZnO thin film co-doped with Mg, Al and Li as an active absorption layer and a silicon substrate, is prepared through a co-doping strategy of Mg, Al and Li, and is applied in a solar blind detector through a matching electric field heat treatment process, so that the band gap of pure ZnO is effectively widened to the solar blind region, the built-in electric field generated by the donor-acceptor defect dipole constructed in the crystal lattice is utilized, and the high insulating state of the material is maintained through the charge compensation effect, so that the high-performance self-powered solar blind ultraviolet detection with low dark current, high responsivity and high on-off ratio is realized under zero applied bias.

The invention provides a photoelectric detector with U-shaped potential, and relates to the technical field of photoelectric detection. The photoelectric detector comprises a substrate layer, an N-type channel layer and a P-type photosensitive structure layer which are sequentially stacked from bottom to top, a first electrode layer and a second electrode layer for applying bias voltage are arranged on the two sides of the N-type channel layer, and the voltage applied to the first electrode layer is larger than that applied to the second electrode layer, so that a U-type potential surface with an opening facing the P-type photosensitive structure layer is formed in the N-type channel layer; the U-shaped potential surface is in a potential distribution form which is formed under the combined action of hole injection from the P-type photosensitive structure layer to the N-type channel layer and non-uniform distribution of conductivity in a channel, wherein the potential in the middle is lower than the potential on the two sides of the U-shaped potential surface. According to the invention, the U-type potential distribution is constructed in the N-type channel layer, effective suppression of carrier transport in a dark state is realized, and a conduction channel is rapidly established under an illumination condition, so that the response speed and responsivity of the photoelectric detector are improved while the dark current is reduced.

The invention provides a solar charging system capable of reducing dark current during parking of a vehicle and ensuring charging opportunities based on solar power generation. A solar charging system mounted on a vehicle, the solar charging system being provided with: a solar panel; a first storage battery which can be charged with power generated by the solar panel; a first control unit that controls the power generation of the solar panel and is connected to the first battery via a switch; and a second control means for controlling the operation of the switch, the first control means supplying power from the first battery when the switch is turned on when the vehicle is parked, and determining whether or not it is possible to generate power from the solar panel.

The application discloses a narrow-band photodetector based on a bromine lead cesium / methylamine lead bromide single crystal heterojunction and a preparation method thereof, and realizes light detection through a heterojunction formed by a CsPbBr3 single crystal and a MAPbBr3 single crystal. The photodetector has the advantages of narrow detection waveband range and high selectivity.

The application discloses an application of a self-driven perovskite photoelectric detector in a visible light photosensitive chip. The self-driven perovskite photoelectric detector comprises electrodes, a first charge transport layer, a second charge transport layer and a perovskite layer; wherein the perovskite layer is a thin film in an interdigital structure formed by low-dimensional and three-dimensional perovskite, and the low-dimensional perovskite is any one or a combination of zero-dimensional, one-dimensional and two-dimensional; the first charge transport layer is one or a combination of a hole transport layer and an electron blocking layer, and the second charge transport layer is one or a combination of an electron transport layer and a hole blocking layer; or the first charge transport layer is one or a combination of an electron transport layer and a hole blocking layer, and the second charge transport layer is one or a combination of an electron transport layer or a hole blocking layer. The perovskite photoelectric detector solves the problem that the application of the existing silicon-based and perovskite visible light detectors is limited due to the insufficient visible light detection performance.

The invention relates to the technical field of photoelectric detectors, in particular to a perovskite / polymer heterojunction-based photoelectric detector and a preparation method thereof, and the photoelectric detector sequentially comprises a substrate, a conductive cathode formed on the substrate, and an electron transport layer formed on the conductive cathode from bottom to top, the perovskite solar cell comprises an electron transport layer, a perovskite light active layer formed on the electron transport layer, an organic polymer heterojunction layer formed on the perovskite light active layer, an electron blocking layer formed on the organic polymer heterojunction layer, and a metal anode formed on the electron blocking layer, the organic polymer heterojunction layer is PDPP3T: PC71BM, and the metal anode is formed on the metal blocking layer. The double-active-layer perovskite-based photoelectric device shows relatively high photoelectric response capability in a near-infrared band, in addition, the carrier extraction capability and mobility are enhanced, the device obtains ultra-low dark current, and the detection rate and responsivity of the device are obviously improved.

This invention relates to the field of infrared detector technology, specifically to an infrared detector device and its fabrication method. The device employs a PBπBN structure. The epitaxial wafer of the device, along its epitaxial growth direction, includes a substrate, a buffer layer, a lower transition layer, a hole blocking layer, an absorption layer, an electron blocking layer, an upper transition layer, and a P-type metal contact layer. A passivation layer and a micro-coarsening light-trapping structure are provided on the surface. The hole blocking layer is a superlattice structure, and the absorption layer is a ternary / quaternary superlattice structure. This invention suppresses carrier leakage through a double-barrier structure, modulates the bandgap through a superlattice, and reduces leakage current and improves light absorption efficiency through surface treatment. The fabricated device can absorb infrared light in the 1.65~3.5μm mid-wave infrared band, with a peak quantum efficiency exceeding 55% and a peak detection value greater than 1×10⁻⁶. 11 cm·Hz 1 / 2 ·W ‑1 Dark current density less than 5.0 × 10 ‑5 A / cm 2 Suitable for high-performance infrared detection applications.

This invention discloses a method for implementing an image sensor with a switchable lateral overflow integrating capacitor (LOFIC) voltage within a pixel unit. The pixel unit comprises at least one photodiode, a transfer transistor, a floating diffusion region, a reset transistor, a LOFIC, and a voltage switching unit. The photodiode is connected to the floating diffusion region via the transfer transistor. The first electrode of the LOFIC is coupled to the voltage switching unit, which is adapted to switch the first electrode of the LOFIC to different voltages. The voltage of the first electrode of the LOFIC is adjusted by timing control of the voltage switching unit to reduce the dark current of the image sensor and improve image delay.