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145results about How to "Reduce dark current" patented technology

AlGan polarized ultraviolet photoelectric detector and manufacturing method thereof

The invention discloses an AlGan material-based ultraviolet photoelectric detector structure and a manufacturing method thereof, which are mainly used for solving the problem of the dependence on a P-type doping material in the prior art. A detector comprises a substrate (1), a transition layer (2), a GaN buffer layer (3), an aluminum component gradual change AlGaN layer (4) and an active layer (5) from bottom to top, wherein the aluminum component gradual change AlGaN layer (4) is partitioned into an upper layer and a lower layer; the thickness of the lower layer is 20-30 nanometers, and thecontent of an aluminum component increases from 0 percent to 80-100 percent; the thickness of the upper layer is 10-20 nanometer, and the content of the aluminum component is 0-80 percent; the left upper side of the aluminum component gradual change AlGaN layer (4) is covered by the active layer (5); a bottom ohmic contact (7) is deposited on the right upper side of the aluminum component gradualchange AlGaN layer (4); a gap (8) is formed between the ohmic contact and the active region; the active region (5) consists of an AlGaN material with the aluminum component content of 0-80 percent; the thickness of the active region (5) is 50-100 nanometers; and a surface ohmic contact electrode (7) is deposited on the surface of the active region. The detector structure has the advantages of capability of automatically working in a photovoltaic mode, high high-frequency characteristic and small dark current, and can be applied to optical signal detection in ultraviolet wavebands between 226 nanometers and 363 nanometers.
Owner:陕西半导体先导技术中心有限公司

Diffusion technology for reducing dark current of metallurgical silicon solar battery

The invention discloses a diffusion technology for reducing dark current of a metallurgical silicon solar battery, which includes the steps of firstly, carrying out concentrated phosphorus diffusion at the low temperature: feeding from a high-concentration phosphorus source for diffusion at the low temperature so as to form high-concentration phosphor doping; secondly, performing phosphorus gettering for a long time at the high temperature: releasing impurities such as deposited impurities, displacement impurities or other impurity complexes of iron, carbon, boron, oxygen and the like into interstitial impurities at the high temperature, so that the interstitial impurities quickly release into a phosphorosilicate glass layer with high solid solubility, high-temperature phosphorus gettering is completed, and the minority carrier lifetime of a body is prolonged; and thirdly, propelling at the lower temperature: at the lower temperature, propelling the junction depth, adjusting to square resistance meeting technological requirements, and lowering the solid solubility of the impurities in a surface concentrated area along with the temperature, so that the interstitial impurities turn to the deposited impurities, the complex impurities and the like. A metallurgical crystal silicon wafer is diffused by means of the diffusion technology, so that the dark current of the solar battery can be effectively reduced, and the conversion efficiency of the solar battery is improved.
Owner:HEFEI & SOLAR TECH

Method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system

InactiveCN102176489APromote growthNo significant increase in difficultyFinal product manufactureSemiconductor devicesVapour phase epitaxyElectron
The invention relates to a method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system. The method comprises the following steps of: growing a buffer layer, a light absorption layer and a wide band gap cap layer which hare matched with lattices on a substrate by using an MBE (molecular beam epitaxy) method or metallorganics vapour phase epitaxy method to obtain an epitaxial structure of a photoelectric detector, wherein the band gap of the light absorption layer can be cut and set during the growth process, and the wide band gap is selected on the premise of meeting cut-off wavelength requirement of the long wave end of the photoelectric detector. According to the invention, the material growing method is simple; by cutting and setting the band gap of the light absorption layer of the photoelectric detector, the device performance can be obviously improved under the condition of basically not changing the original design of the device, and the detectivity can be enhanced by more than three times. The method is not only suitable for manufacturing photoelectric detectors in different kinds of III-V compound material systems, but also suitable for manufacturing other types of photoelectric devices and electronic devices; and the application of the method can be widened to other material systems. The method has a good application prospect.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Optical detector based on second-class Weyl semimetal molybdenum ditelluride and detection method of optical detector

The invention discloses an optical detector based on second-class Weyl semimetal molybdenum ditelluride and a detection method of the optical detector. According to the optical detector, a molybdenumditelluride nanosheet is adopted to serve as a light detection material, wherein the molybdenum ditelluride nanosheet is a zero-gap material and is wide in detection spectrum range, bias voltage doesnot need to be added and cannot be added, and the material has sensitive responsivity under room temperature; the detector is sensitive to a polarized light direction and can be used for polarizationdetection; the detector can be applied to the fields of infrared imaging, military reconnaissance, night vision goggles, etc. and has broad application prospects in terms of military equipment; besides, it is needed to be specially pointed out that the optical detector based on the material can make a rather high light current response without the need for providing bias voltage, and the dark current is quite low; and moreover, the bias voltage cannot be added to the optical detector, or otherwise a background current can be generated, it is not needed to provide a low-temperature environmentfor the optical detector based on the material, and therefore miniaturization and economy of the detector are benefited a lot.
Owner:PEKING UNIV

Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same

The invention discloses a transparent electrode grid-control transverse PIN blue and purple photo-detector and a method for manufacturing the same. The photo-detector comprises a P (positive)-type substrate. N (negative) wells and a deep N well are isolated from one another to form a reversed P well in the P-type substrate, an N<+> zone and a P<+> zone are arranged in the reversed P well, a grid oxide layer, a transparent conducting thin film and a grid electrode G sequentially cover the surface, which is positioned between the N<+> zone and the P<+> zone, of the reversed P well, an anode A is arranged on the N<+> zone, and a cathode K is arranged on the P<+> zone. The method for manufacturing the transparent electrode grid-control transverse PIN blue and purple photo-detector includes isolating the N wells and the deep N well from one another to form the reversed P well on the P-type substrate; forming the N<+> zone and the P<+> zone on two sides of the reversed P well and respectively forming the anode A and the cathode K; sequentially manufacturing the grid oxide layer, the transparent conducting thin film and the grid electrode G on the upper surface of the reversed P well. The transparent electrode grid-control transverse PIN blue and purple photo-detector and the method have the advantages that the problem of conflict between the quantum efficiency and frequency response of existing photo-detectors can be effectively solved, and the transparent electrode grid-control transverse PIN blue and purple photo-detector is low in dark current, high in quantum efficiency, rapid in frequency response, big in input impedance and favorable for integration.
Owner:阿母芯微电子技术(中山)有限公司

Graphene enhancement type InGaAs infrared detector

InactiveCN103383976AReduce dark currentSuppress dark currentSemiconductor devicesPower flowGas phase
The invention relates to a graphene enhancement type InGaAs infrared detector. The graphene enhancement type InGaAs infrared detector solves the technical problem that an existing infrared detector is narrow in detection range and high in dark current. According to the graphene enhancement type InGaAs infrared detector, a buffer layer, an InGaAs absorbing layer with wavelength extended and a graphene cover layer which grow sequentially on a substrate form a pin detector structure. The invention discloses a method for growing the mismatch buffer layer on the substrate in a two-step method. An InAlAs ternary system material or InAsP of an InGaAs material which is suitable for metallorganic chemical vapor deposition technology growth and convenient to control and enables forbidden bandwidth to be larger than extended wavelength is adopted and can effectively avoid mismatch dislocation and be suitable for a transparent buffer layer structure with light entering at the back. The method for utilizing graphene to serve as the cover layer of the InGaAs infrared detector to expand the detection range and reduce dark current is provided, detector performance is improved, and the graphene enhancement type InGaAs infrared detector has wide application prospect.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Color film substrate and manufacturing method thereof

The invention relates to a color film substrate and a manufacturing method thereof. The color film substrate comprises a black matrix prepared from a metal material, wherein a transparent structural layer for reducing the intensity of reflected light of the black matrix by coherent interference of light is formed on the black matrix, and the transparent structural layer is positioned above the black matrix. The manufacturing method of the color film substrate comprises the following steps: forming a pattern comprising the black matrix on a substrate; and forming the transparent structural layer for reducing the intensity of reflected light of the black matrix by the coherent interference of light, wherein the transparent structural layer is positioned above the black matrix. In the invention, the coherent interference of light is used, and the transparent structural layer for reducing the intensity of reflected light of the black matrix by the coherent interference of light is formed on the black matrix, thereby reducing the intensity of light injecting into a TFT channel region and irradiating an active layer, reducing dark current, and improving the display performance of TFT-LCD. The invention can be suitable for liquid crystal displays of a TN mode, a VA mode, an FFS mode, an IPS mode and the like, and has wide application prospect.
Owner:BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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