145results about How to "Reduce dark current" patented technology

A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

CMOS imaging sensors having fluorine-passivated structures to reduce dark current are disclosed together with methods of making thereof. The CIS comprises an array of pixels on a substrate, each pixel comprising a pinned photodiode, an isolation trench adjacent to the pinned photodiode, and a plurality of transistors. Methods of preparing a CIS comprise providing a source of fluorine (F) atoms, and annealing in the presence of the source of F atoms. After the annealing, at least one silicon-containing surface or region in the CIS comprises Si—F bonds and is fluorine passivated.

A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

This invention relates to InGaN wide spectrum solar battery with several well structures, which comprises one underlay, one transit layer, P shape InGaN layer, several quanton well structure layer, n shaoe InGaN layer, wherein, the structure layer is composed of two different InGaN alloy materials with one of thin band InxwGa1-xwN alloy to form quanton well and with second of wide gap InxbGa1-xbN alloy. The battery uses InGaN alloy materials quanton well structure to process solar energy battery absorptive area.

An imaging device includes: a semiconductor substrate; a photoelectric converting film that is forms on the semiconductor substrate and that generates charges corresponding to an incident light; a plurality of pixel portions that receive the charges from the photoelectric converting film, a floating gate that is electrically connected to the photoelectric converting film; and a transistor that fluctuates a threshold voltage so as to start to increase a drain current when an electric potential of the floating gate changes.

The invention discloses an ultraviolet light detector with a titanium dioxide nanotube array serving as a matrix and a preparation method thereof. The ultraviolet light detector comprises a titanium sheet substrate (1), the titanium dioxide nanotube array (2), an insulating layer (3) and a graphene film (4) sequentially from bottom to top, extraction electrodes (5) are arranged on the lower surface of the titanium sheet substrate (1) and the upper surface of the graphene film (4) respectively and are connected with a current measurer (6). The titanium dioxide nanotube array is prepared on the titanium sheet substrate by an anodizing method, oxygen vacancy of the array prepared by the method is less, and mismatch of stoichiometric ratio is avoided. Therefore, titanium dioxide is good in crystalline structure after annealing to lead to high response, low dark current and high ultraviolet-to-visible rejection ratio.

A photoelectric conversion element is provided and includes: a conductive thin layer; an organic photoelectric conversion layer including a compound represented by formula (I); and a transparent conductive thin layer, in this order:

In the formula (I), X represents O, S or N—R₁₀; R^x and R^y each independently represents a hydrogen atom or a substituent, at least one of R^x and R^y is an electron-withdrawing group, and R^x and R^y may be connected to each other to form a ring, provided that R^x and R^y do not represent a cyano group at the same time; R₇ to R₁₀ each independently represents a hydrogen atom or a substituent, and R₈ and R₉ may be connected to each other to form a ring; L represents a linking group comprising a conjugated bond; and D₁ represents a group of atoms.

A pixel of an image sensor includes a gate insulation layer formed over a substrate doped with first-type impurities, a transfer gate formed over the gate insulation layer, a photodiode formed in the substrate at one side of the transfer gate, and a floating diffusion node formed in the substrate at the other side of the transfer gate, wherein the transfer gate has a negative bias during a charge integration cycle.

A photodiode (PD chip) includes a substrate, an absorption layer, a p-n junction in the absorption layer, a passivation film for protecting the end of the p-n junction, a p-electrode, and an n-electrode. The passivation film is covered with a protective layer composed of an insulative resin and having a thickness larger than that of the passivation film such that the passivation film of the PD chip fixed to the Si wafer and hence the p-n junction are not damaged or contaminated when an Si wafer including a number of horizontally and vertically arranged chip units, each having a V-groove for fixing an optical fiber, a marker, and a metallized pattern, is diced. Thus, a low-cost optical receiver module that does not generate dark current can be produced.

The invention discloses an AlGan material-based ultraviolet photoelectric detector structure and a manufacturing method thereof, which are mainly used for solving the problem of the dependence on a P-type doping material in the prior art. A detector comprises a substrate (1), a transition layer (2), a GaN buffer layer (3), an aluminum component gradual change AlGaN layer (4) and an active layer (5) from bottom to top, wherein the aluminum component gradual change AlGaN layer (4) is partitioned into an upper layer and a lower layer; the thickness of the lower layer is 20-30 nanometers, and thecontent of an aluminum component increases from 0 percent to 80-100 percent; the thickness of the upper layer is 10-20 nanometer, and the content of the aluminum component is 0-80 percent; the left upper side of the aluminum component gradual change AlGaN layer (4) is covered by the active layer (5); a bottom ohmic contact (7) is deposited on the right upper side of the aluminum component gradualchange AlGaN layer (4); a gap (8) is formed between the ohmic contact and the active region; the active region (5) consists of an AlGaN material with the aluminum component content of 0-80 percent; the thickness of the active region (5) is 50-100 nanometers; and a surface ohmic contact electrode (7) is deposited on the surface of the active region. The detector structure has the advantages of capability of automatically working in a photovoltaic mode, high high-frequency characteristic and small dark current, and can be applied to optical signal detection in ultraviolet wavebands between 226 nanometers and 363 nanometers.

An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other.

A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.

Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the layers through the layers at selected regions to disorder the superlattice and create diode junctions oriented transversely to the naturally enhanced lateral mobility of photogenerated charge carriers within the superlattice. The diode junctions are terminated at a top surface of the photodetector within an SLS layer of wide bandgap material to minimize unwanted currents. A related architecture disorders the superlattice of topmost SLS layers by diffusing therethrough a dopant configured as a grid and penetrating to a lower SLS layer having the same carrier type as the dopant and opposite that of the topmost layers to isolate pixels within the topmost layers. Ohmic contacts may be deposited on doped regions, pixels, and substrate to provide desired external connections.

The invention belongs to the technical field of ultraviolet photoelectric detectors, and particularly relates to an ultraviolet photoelectric detector based on a gallium oxide heterojunction structureand a preparation method thereof. The ultraviolet photoelectric detector includes an alpha-Ga2O3/beta-Ga2O3 heterojunction nanosheet array, ITO transparent conductive glass, and a Ti/Au film electrode. An alpha-Ga2O3/beta-Ga2O3 heterojunction nanosheet is formed by wrapping an alpha-Ga2O3 nanosheet as a core in beta-Ga2O3 as a shell. The ultraviolet photoelectric detector of the invention has stable performance, sensitive reaction and small dark current, and has a good ultraviolet photoelectrical response effect. The preparation method has the characteristics of strong process controllability, simple operation, good universality, and the like, is expected to be widely applied to fields such as self-powered flame detection, high-voltage line corona and missile plume, and has high popularization value.

The invention discloses a diffusion technology for reducing dark current of a metallurgical silicon solar battery, which includes the steps of firstly, carrying out concentrated phosphorus diffusion at the low temperature: feeding from a high-concentration phosphorus source for diffusion at the low temperature so as to form high-concentration phosphor doping; secondly, performing phosphorus gettering for a long time at the high temperature: releasing impurities such as deposited impurities, displacement impurities or other impurity complexes of iron, carbon, boron, oxygen and the like into interstitial impurities at the high temperature, so that the interstitial impurities quickly release into a phosphorosilicate glass layer with high solid solubility, high-temperature phosphorus gettering is completed, and the minority carrier lifetime of a body is prolonged; and thirdly, propelling at the lower temperature: at the lower temperature, propelling the junction depth, adjusting to square resistance meeting technological requirements, and lowering the solid solubility of the impurities in a surface concentrated area along with the temperature, so that the interstitial impurities turn to the deposited impurities, the complex impurities and the like. A metallurgical crystal silicon wafer is diffused by means of the diffusion technology, so that the dark current of the solar battery can be effectively reduced, and the conversion efficiency of the solar battery is improved.

To achieve an image sensor with low noise, small dark current and the high sensitivity, an n-type region serving as a charge storage region (2) of a photodiode is buried in a substrate (1). The interface between silicon and a silicon oxide film (4) is covered with a p-layer (3) of high concentration, and a p-layer (11) of a relatively low concentration is formed only in the portion immediately below a floating electrode (14) for signal extraction. The electrons generated by light are stored in the n-type region serving as the charge storage region (2), and the potential of the portion of the p-layer (11) at the surface of the semiconductor region is changed thereby. The change in the potential is transmitted through a thin insulating film to the floating electrode (14) in a floating state by the capacitive coupling. The change in the potential of the floating electrode (14) is read out by a buffer transistor (7). The initialization of charges is executed by adding a positive high voltage to the gate electrode (6) of a first transfer transistor (21) by a control signal R, such that all of the electrons stored in the charge storage region (2) can be transferred to the n⁺ region (5), and the generation of the reset noise can be protected.

The invention relates to the technical field of semiconductor apparatuses, and in particular relates to a photoconductive semiconductor switch structure. The photoconductive semiconductor switch structure comprises a substrate, wherein a first silicon carbide film is arranged on the top surface of the substrate; electrodes are respectively arranged on the two ends of the top end surface of the first silicon carbide film; a second silicon carbide film is arranged on the top end surfaces of the electrodes; and the second silicon carbide film covers a gap between the electrodes and part area on the top end surfaces of the electrodes. According to the photoconductive semiconductor switch structure disclosed by the invention, a silicon carbide film is arranged on the top end surfaces of the electrodes to increase the contact area of the silicon carbide film and the electrodes, so that break-over current can circulate from the two surfaces of the electrodes. Meanwhile, breakdown voltage and break-over current of the photoconductive semiconductor switch are improved, and the dark current is reduced.

The invention discloses a GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector, which consists of the following components from bottom to top: a GaAs substrate, a GaAs buffer layer, an AlSb nucleating layer, a GaSb lower buffer layer, an AlSb/GaSb superlattice layer, a GaSb upper buffer layer, an InAs/GaSb superlattice layer, a GaSb cover layer and a titanium alloy electrode. The invention also discloses a method for manufacturing the GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector at the same time. By using the GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector and the method, a high-quality GaSb buffer layer is grown on the GaAs substrate, and the InAs/GaSb superlattice layer is grown on the GaSb buffer layer, thus an infrared photodetector with low dark current and low cost can be manufactured.

The invention relates to a method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system. The method comprises the following steps of: growing a buffer layer, a light absorption layer and a wide band gap cap layer which hare matched with lattices on a substrate by using an MBE (molecular beam epitaxy) method or metallorganics vapour phase epitaxy method to obtain an epitaxial structure of a photoelectric detector, wherein the band gap of the light absorption layer can be cut and set during the growth process, and the wide band gap is selected on the premise of meeting cut-off wavelength requirement of the long wave end of the photoelectric detector. According to the invention, the material growing method is simple; by cutting and setting the band gap of the light absorption layer of the photoelectric detector, the device performance can be obviously improved under the condition of basically not changing the original design of the device, and the detectivity can be enhanced by more than three times. The method is not only suitable for manufacturing photoelectric detectors in different kinds of III-V compound material systems, but also suitable for manufacturing other types of photoelectric devices and electronic devices; and the application of the method can be widened to other material systems. The method has a good application prospect.

Structure of the detector is as following: there is n type InP layer on semi insulated InP substrate; line array micro tabletop formed through etching and composed of InGaAs absorbed layer and p type InP layer is setup on n type InP layer; a layer of p-InGaAs electrode transition layer is developed on leadout area of p type electrode on micro tabletop; In2S3 layer built through sulphidizing process covers all bare areas on the micro tabletop; there are In2S3 passivation layer and SiNx passivation layer made through heat evaporation in sequence on the In2S3 layer. Matched crystal lattice between In2S3 built through sulphidizing process and In2S3 passivation layer reduces contact surface state and dark current, and increases quantum efficiency. SiNx passivation layer raises stability and reliability. P-InGaAs electrode transition layer realizes ohmic contact of Ti/Pt/Au electrodes without anneal. Small contact resistance raises performance of detector.

The invention discloses an optical detector based on second-class Weyl semimetal molybdenum ditelluride and a detection method of the optical detector. According to the optical detector, a molybdenumditelluride nanosheet is adopted to serve as a light detection material, wherein the molybdenum ditelluride nanosheet is a zero-gap material and is wide in detection spectrum range, bias voltage doesnot need to be added and cannot be added, and the material has sensitive responsivity under room temperature; the detector is sensitive to a polarized light direction and can be used for polarizationdetection; the detector can be applied to the fields of infrared imaging, military reconnaissance, night vision goggles, etc. and has broad application prospects in terms of military equipment; besides, it is needed to be specially pointed out that the optical detector based on the material can make a rather high light current response without the need for providing bias voltage, and the dark current is quite low; and moreover, the bias voltage cannot be added to the optical detector, or otherwise a background current can be generated, it is not needed to provide a low-temperature environmentfor the optical detector based on the material, and therefore miniaturization and economy of the detector are benefited a lot.

The invention discloses a transparent electrode grid-control transverse PIN blue and purple photo-detector and a method for manufacturing the same. The photo-detector comprises a P (positive)-type substrate. N (negative) wells and a deep N well are isolated from one another to form a reversed P well in the P-type substrate, an N<+> zone and a P<+> zone are arranged in the reversed P well, a grid oxide layer, a transparent conducting thin film and a grid electrode G sequentially cover the surface, which is positioned between the N<+> zone and the P<+> zone, of the reversed P well, an anode A is arranged on the N<+> zone, and a cathode K is arranged on the P<+> zone. The method for manufacturing the transparent electrode grid-control transverse PIN blue and purple photo-detector includes isolating the N wells and the deep N well from one another to form the reversed P well on the P-type substrate; forming the N<+> zone and the P<+> zone on two sides of the reversed P well and respectively forming the anode A and the cathode K; sequentially manufacturing the grid oxide layer, the transparent conducting thin film and the grid electrode G on the upper surface of the reversed P well. The transparent electrode grid-control transverse PIN blue and purple photo-detector and the method have the advantages that the problem of conflict between the quantum efficiency and frequency response of existing photo-detectors can be effectively solved, and the transparent electrode grid-control transverse PIN blue and purple photo-detector is low in dark current, high in quantum efficiency, rapid in frequency response, big in input impedance and favorable for integration.

The invention discloses a 1064nm enhanced Si-PIN photoelectric detector, which comprises an N-type substrate layer, a P+ region, a black silicon layer, an N+ region, a passivating film, an antireflection film, a P electrode and an N electrode. The invention further discloses a manufacturing method of the photoelectric detector. The 1064nm enhanced Si-PIN photoelectric detector has the beneficial technical effects that the responsivity of the 1064nm enhanced Si-PIN photoelectric detector at a 1064nm wavelength reaches 0.6A/W and is doubled in comparison with that of a common device; and meanwhile, the 1064nm enhanced Si-PIN photoelectric detector has the characteristics of being low in cost, easy to integrate, high in response speed, high in responsivity, stable, reliable and the like, and has obvious advantages in the aspect of large-scale marketization.

The invention discloses an image sensor and a forming method thereof. The image sensor comprises a semiconductor substrate, a light sensing structure, a blocking layer and a light filtering layer, wherein the semiconductor substrate comprises a plurality of pixel areas and isolation areas located between the adjacent pixel areas; the semiconductor substrate is provided with a first surface and a second surface which are opposite to each other; the light sensing structure is located in the pixel areas of the semiconductor substrate, and the first surface of the semiconductor substrate exposes the light sensing structure; the blocking layer is located on the surface of the second surface of the semiconductor substrate, and a first groove is formed in the blocking layer, and the bottom of thefirst groove exposes the surface of the blocking layer located in the pixel areas, wherein the blocking layer is made of a pressure-resistant material; and the light filtering layer is located in thefirst groove, wherein the thermal expansion coefficient of the blocking layer material is less than that of the light filtering layer material. The performance of the image sensor is improved.

The invention relates to a graphene enhancement type InGaAs infrared detector. The graphene enhancement type InGaAs infrared detector solves the technical problem that an existing infrared detector is narrow in detection range and high in dark current. According to the graphene enhancement type InGaAs infrared detector, a buffer layer, an InGaAs absorbing layer with wavelength extended and a graphene cover layer which grow sequentially on a substrate form a pin detector structure. The invention discloses a method for growing the mismatch buffer layer on the substrate in a two-step method. An InAlAs ternary system material or InAsP of an InGaAs material which is suitable for metallorganic chemical vapor deposition technology growth and convenient to control and enables forbidden bandwidth to be larger than extended wavelength is adopted and can effectively avoid mismatch dislocation and be suitable for a transparent buffer layer structure with light entering at the back. The method for utilizing graphene to serve as the cover layer of the InGaAs infrared detector to expand the detection range and reduce dark current is provided, detector performance is improved, and the graphene enhancement type InGaAs infrared detector has wide application prospect.

The invention discloses a backside illuminated CMOS image sensor and a manufacturing method of the sensor. The method includes the steps of forming a CMOS device through the front end process, forming a BPSG film on the CMOS device and carrying out thermal processing. The CMOS image sensor obtained in the method can effectively reduce generation of dark currents and white dots and reliability of the sensor is improved.

The invention relates to a color film substrate and a manufacturing method thereof. The color film substrate comprises a black matrix prepared from a metal material, wherein a transparent structural layer for reducing the intensity of reflected light of the black matrix by coherent interference of light is formed on the black matrix, and the transparent structural layer is positioned above the black matrix. The manufacturing method of the color film substrate comprises the following steps: forming a pattern comprising the black matrix on a substrate; and forming the transparent structural layer for reducing the intensity of reflected light of the black matrix by the coherent interference of light, wherein the transparent structural layer is positioned above the black matrix. In the invention, the coherent interference of light is used, and the transparent structural layer for reducing the intensity of reflected light of the black matrix by the coherent interference of light is formed on the black matrix, thereby reducing the intensity of light injecting into a TFT channel region and irradiating an active layer, reducing dark current, and improving the display performance of TFT-LCD. The invention can be suitable for liquid crystal displays of a TN mode, a VA mode, an FFS mode, an IPS mode and the like, and has wide application prospect.

The present invention mainly relates to a nuclear radiation detector, in particular, it relates to a position sensitive detector used in the high-energy physics and nuclear physics and its production process. Said detector includes silicon substrate, N-type, it is mainly characterized by that it also includes detection window, it is formed from mutually-parallelized detection windows, it has B+ doped region, forming PN Gunction, on it an Al-layer is set, and is equipped with a lead; between two windows an insulated separating zone is set; back surface of silicon substrate has P- doped region, forming N+ ohmic contact, on it an Al-layer is coated to form back electrode. Said invention also provides the concrete steps of its production method.

The invention provides a monolithic n-i-p-i-n type wide-spectrum photodetector including an InP substrate; an InP of a first conductivity type as a lower contact layer on the InP substrate is formed;an intrinsic Inx1Ga1-x1As as the first absorption layer is formed over the lower contact layer; a second conductive type InP as a common contact layer is formed over the first absorbing layer; a lattice adapted buffer lay is formed over common contact layer; Inx2Ga1-2As of intrinsic or first conductivity class is formed over the lattice adaptation buffer layer; a first conductivity type Inx3Al1-x3As upper contact layer is formed on a second absorption layer. A PIN detector with standard wavelength response and a PIN detector with extended wavelength response are combined by adopting a two-color detector design scheme, and PD1 is used to respond to a spectrum range below 1.7 mum, PD2 is used to respond to a spectrum range of 1.7 mum-2.5 mum. PD1 and PD2 share a P electrode to form a back incident n-i-p-i-n type device structure, and the modulation of the response spectrum by switching the electrode bias is realized.

The invention relates to a method for forming a CMOS image sensor, which comprises the following steps: a semiconductor substrate with a first conductive type is provided and is divided into a photodiode area and a peripheral circuit area; the invention forms a second insulating layer for protection on the surface of the photodiode area after the technical step of forming a sidewall of the polysilicon gate of a MOS transistor to prevent the photo resist layer in the following ion implantation technology from contaminating and forming metal ions on the surface. Under the condition of no increase of mask, that is to say, no increase of technical complexity or technical cost, the forming method applies one or two layers which are used for forming the first insulating layer of the sidewall of the polysilicon gate as the second insulating layer of the photodiode area to protect the surface of the photodiode, thus reducing the generation of dark current.