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InGaN series broad band solar battery comprising multiple quanta structure

A multi-quantum well structure and solar cell technology, which is applied in the field of InGaN-based broad-spectrum solar cells, can solve problems such as reducing battery performance, and achieve the effects of improving performance, realizing energy conversion efficiency, and reducing dark current.

Inactive Publication Date: 2007-03-14
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this full-spectrum solar cell structure is not perfect, and there is still dark current of the battery, which reduces the performance of the battery

Method used

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  • InGaN series broad band solar battery comprising multiple quanta structure
  • InGaN series broad band solar battery comprising multiple quanta structure
  • InGaN series broad band solar battery comprising multiple quanta structure

Examples

Experimental program
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Embodiment 1

[0025] As shown in FIG. 1 , on a sapphire substrate, MOCVD epitaxial growth technology is used to epitaxially grow the InGaN system wide-spectrum single-junction solar cell structure containing multiple quantum wells of the present invention. First, a 1 micron GaN transition layer 60 is grown on the substrate 50, followed by a 500 nm p-type In 0.4 Ga 0.6 N (the doped impurity is Mg, the doping concentration is 5×10 17 cm -3 ) layer 40, 30 cycles of In 0.45 Ga 0.55 N (quantum well width 4nm) / In 0.4 Ga 0.6 N (barrier width 10nm) (10 / 20), then 300nm n-type In 0.4 Ga 0.6 N (the doped impurity is Si, the doping concentration is 1×10 18 cm -3 ) layer 30 to obtain the InGaN-based single-junction solar cell structure containing multiple quantum wells of the present invention. The photoelectric conversion efficiency of this structure is greater than 20%.

Embodiment 2

[0027] As shown in FIG. 2 , on a sapphire substrate, MOCVD epitaxial growth technology is used to epitaxially grow the InGaN system wide-spectrum two-junction solar cell containing the multi-quantum well structure of the present invention. First, a 1 micron transition layer 60 of GaN and InGaN combination is grown on the substrate 50; then a bottom junction cell with a narrow bandgap is grown, and the structure of this cell is: 500nm p-type In 0.55 Ga 0.45 N (the doped impurity is Zn, the doping concentration is 3×10 17 cm -3 ) layer 40, 20 cycles of In 0.6 Ga 0.4 N (quantum well width 3nm) / In 0.65 Ga 0.45 N (barrier width 8nm) (10 / 20), then 200nm of n-type In 0.55 Ga 0.45 N (doped impurity is Si, doping concentration 2×10 18 cm -3 ) layer 30; a tunnel junction 90 connected to the top junction is grown thereon; a top junction cell structure is grown on the tunnel junction 90, and the structure of each layer of the top junction cell is: 400nm p-type In 0.4 Ga 0.6 N (...

Embodiment 3

[0029] On the Si substrate, the InGaN wide-spectrum two-junction solar cell structure containing multiple quantum wells of the present invention is epitaxially grown by using MOCVD epitaxial growth technology. First, grow an 800nm ​​AlGaN transition layer on the Si substrate; then grow a bottom junction cell with a narrow band gap, the structure of this cell is: 500nm p-type In 0.55 Ga 0.45 N (the doped impurity is Mg, the doping concentration is 3×10 17 cm -3 ) layer, 35 cycles of In 0.6 Ga 0.4 N (quantum well width 3nm) / In 0.55 Ga 0.45 N (barrier width 8nm), then 200nm of n-type In 0.55 Ga 0.45 N (the doped impurity is Si, the doping concentration is 3×10 18 cm -3 ) layer; a tunnel junction connected to the top junction is grown on it; a top junction cell structure is grown on the tunnel junction, and the structure of each layer of the top junction cell is: 800nm ​​p-type In 0.4 Ga 0.6 N (doped impurity is Mg, doping concentration 2×10 17 cm -3 ) layer and 600nm...

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Abstract

This invention relates to InGaN wide spectrum solar battery with several well structures, which comprises one underlay, one transit layer, P shape InGaN layer, several quanton well structure layer, n shaoe InGaN layer, wherein, the structure layer is composed of two different InGaN alloy materials with one of thin band InxwGa1-xwN alloy to form quanton well and with second of wide gap InxbGa1-xbN alloy. The battery uses InGaN alloy materials quanton well structure to process solar energy battery absorptive area.

Description

technical field [0001] The invention relates to an InGaN wide-spectrum solar cell, in particular to an InGaN wide-spectrum solar cell containing a multi-quantum well structure. Background technique [0002] Due to its unique physical properties, the wide bandgap semiconductor GaN material makes it widely used in optoelectronics (including the preparation of green, blue, ultraviolet light-emitting diodes, laser diodes and ultraviolet detectors) and microelectronics (including high electron mobility transistors and heterogeneous junction bipolar transistors) are widely used. In 2003, a research team led by Professor W. Walukiewicz of Lawrence Berkely National Laboratory, in cooperation with researchers from Cornell University and Ritsumeikan University in Japan, discovered that the band gap of InN was 0.7eV, not 2eV as previously thought. This finding extends the In x Ga 1-x The bandgap of the N ternary alloy allows it to vary from 0.7eV to 3.4eV. This energy range is perf...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/065H01L31/0687H01L31/0735H01L31/078
CPCY02E10/50Y02E10/544
Inventor 郭丽伟陈弘周均铭张洁何涛
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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