InGaN series broad band solar battery comprising multiple quanta structure

A multi-quantum well structure and solar cell technology, which is applied in the field of InGaN-based broad-spectrum solar cells, can solve problems such as reducing battery performance, and achieve the effects of improving performance, realizing energy conversion efficiency, and reducing dark current.

Inactive Publication Date: 2007-03-14
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this full-spectrum solar cell structure is not perfect, and there is

Method used

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  • InGaN series broad band solar battery comprising multiple quanta structure
  • InGaN series broad band solar battery comprising multiple quanta structure
  • InGaN series broad band solar battery comprising multiple quanta structure

Examples

Experimental program
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Example Embodiment

[0024] Example 1,

[0025] As shown in Fig. 1, on a sapphire substrate, the MOCVD epitaxial growth technology is used to epitaxially grow the InGaN system broad-spectrum single junction solar cell structure containing multiple quantum wells of the present invention. First, grow a 1 micron GaN transition layer 60 on the substrate 50, and then grow a 500 nm p-type In 0.4 Ga 0.6 N (the impurity doped is Mg, the doping concentration is 5×10 17 cm -3 ) In layer 40, 30 cycles 0.45 Ga 0.55 N (quantum well width 4nm) / In 0.4 Ga 0.6 N (barrier width 10nm) (10 / 20), then 300nm n-type In 0.4 Ga 0.6 N (the impurity doped is Si, the doping concentration is 1×10 18 cm -3 ) Layer 30 to obtain the InGaN-based single junction solar cell structure containing multiple quantum wells of the present invention. The photoelectric conversion efficiency of this structure is greater than 20%.

Example Embodiment

[0026] Example 2,

[0027] As shown in Figure 2, on a sapphire substrate, the MOCVD epitaxial growth technology is used to epitaxially grow the InGaN system broad-spectrum two-junction solar cell containing a multiple quantum well structure of the present invention. First, grow a 1 micron GaN and InGaN transition layer 60 on the substrate 50; then grow an underlying junction cell with a narrow band gap. The cell structure is: 500nm p-type In 0.55 Ga 0.45 N (the impurity doped is Zn, the doping concentration is 3×10 17 cm -3 ) Layer 40, 20 period In 0.6 Ga 0.4 N (quantum well width 3nm) / In 0.65 Ga 0.45 N (barrier width 8nm) (10 / 20), then 200nm n-type In 0.55 Ga 0.45 N (the impurity doped is Si, the doping concentration is 2×10 18 cm -3 ) Layer 30; grow a tunnel junction 90 connecting the top junction thereon; grow a top junction cell structure on the tunnel junction 90, the structure of each layer of the top junction cell is: 400nm p-type In 0.4 Ga 0.6 N (the impurity doped is Zn, ...

Example Embodiment

[0028] Example 3.

[0029] On the Si substrate, the MOCVD epitaxial growth technology is used to epitaxially grow the InGaN system broad-spectrum two-junction solar cell structure containing multiple quantum wells of the present invention. First, grow an 800nm ​​AlGaN transition layer on a Si substrate; then grow an underlying junction cell with a narrow band gap. The structure of this cell is: 500nm p-type In 0.55 Ga 0.45 N (the impurity doped is Mg, the doping concentration is 3×10 17 cm -3 ) Layer, 35 cycles of In 0.6 Ga 0.4 N (quantum well width 3nm) / In 0.55 Ga 0.45 N (barrier width 8nm), then 200nm n-type In 0.55 Ga 0.45 N (the impurity doped is Si, the doping concentration is 3×10 18 cm -3 ) Layer; grow a tunnel junction connected to the top junction; grow a top junction cell structure on the tunnel junction, the structure of each layer of the top junction cell is: 800nm ​​p-type In 0.4 Ga 0.6 N (the impurity doped is Mg, the doping concentration is 2×10 17 cm -3 ) Layer and...

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Abstract

This invention relates to InGaN wide spectrum solar battery with several well structures, which comprises one underlay, one transit layer, P shape InGaN layer, several quanton well structure layer, n shaoe InGaN layer, wherein, the structure layer is composed of two different InGaN alloy materials with one of thin band InxwGa1-xwN alloy to form quanton well and with second of wide gap InxbGa1-xbN alloy. The battery uses InGaN alloy materials quanton well structure to process solar energy battery absorptive area.

Description

technical field [0001] The invention relates to an InGaN wide-spectrum solar cell, in particular to an InGaN wide-spectrum solar cell containing a multi-quantum well structure. Background technique [0002] Due to its unique physical properties, the wide bandgap semiconductor GaN material makes it widely used in optoelectronics (including the preparation of green, blue, ultraviolet light-emitting diodes, laser diodes and ultraviolet detectors) and microelectronics (including high electron mobility transistors and heterogeneous junction bipolar transistors) are widely used. In 2003, a research team led by Professor W. Walukiewicz of Lawrence Berkely National Laboratory, in cooperation with researchers from Cornell University and Ritsumeikan University in Japan, discovered that the band gap of InN was 0.7eV, not 2eV as previously thought. This finding extends the In x Ga 1-x The bandgap of the N ternary alloy allows it to vary from 0.7eV to 3.4eV. This energy range is perf...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/065H01L31/0687H01L31/0735H01L31/078
CPCY02E10/50Y02E10/544
Inventor 郭丽伟陈弘周均铭张洁何涛
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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