The application discloses a preparation method of gamma-phase
germanium selenide nanosheets. The application realizes controllable preparation of high-quality gamma-phase
germanium selenide nanosheets by adopting a normal-pressure vapor deposition method and based on a rapid cooling strategy. The application realizes controllable growth of gamma-phase
germanium selenide nanosheets with different lateral sizes by controlling growth temperature. The application does not need to plate a catalyst such as gold on a
substrate surface, and the preparation process is relatively simple. The prepared gamma-phase
germanium selenide nanosheets have great application potential in flexible sensors, photoelectric devices, especially near-
infrared photoelectric detectors and the like. The gamma-phase
germanium selenide nanosheets prepared by the application are still very stable after being placed in air for half a year, and also provide a good experimental platform for subsequent
physical property research on the material.