6results about How to "Low growth temperature" patented technology

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof and a light emitting diode, and relates to the field of semiconductor photoelectric devices. The light emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an intercalation layer, an electron blocking layer and a P-type GaN layer arranged on the substrate in sequence; the intercalation layer comprises an AlN layer and a superlattice layer; the superlattice layer comprises P-AlN layers, P-InN layers and P-GaN layers which are stacked in sequence, and the number of periods is greater than or equal to 2. By implementing the application, the light emitting efficiency of the light emitting diode can be improved.

The present invention provides a flux for silicon carbide crystal growth, a cubic silicon carbide crystal and a growth method thereof, belonging to the technical field of crystal growth, wherein the flux is an alloy comprising a rare earth metal, a transition metal and carbon: the molar ratio of the rare earth metal to the transition metal is 1:9 to 9:1. The flux provided by the present invention can reduce the growth temperature of silicon carbide crystals, realize the growth of silicon carbide crystals at a lower temperature, and at the same time can increase the solubility of carbon in silicon melt, increase the concentration of carbon in silicon melt in the early stage of crystal growth, and realize obtaining high-quality and large-sized silicon carbide crystals in a shorter time.

The application discloses a preparation method of gamma-phase germanium selenide nanosheets. The application realizes controllable preparation of high-quality gamma-phase germanium selenide nanosheets by adopting a normal-pressure vapor deposition method and based on a rapid cooling strategy. The application realizes controllable growth of gamma-phase germanium selenide nanosheets with different lateral sizes by controlling growth temperature. The application does not need to plate a catalyst such as gold on a substrate surface, and the preparation process is relatively simple. The prepared gamma-phase germanium selenide nanosheets have great application potential in flexible sensors, photoelectric devices, especially near-infrared photoelectric detectors and the like. The gamma-phase germanium selenide nanosheets prepared by the application are still very stable after being placed in air for half a year, and also provide a good experimental platform for subsequent physical property research on the material.

The application discloses a semiconductor laser epitaxial structure and a manufacturing method thereof. The semiconductor laser epitaxial structure comprises a multi-quantum well layer, the multi-quantum well layer is a periodic structure, each period comprises a well layer, a cap layer and a barrier layer in sequence, and the well layer comprises InGaN material; the cap layer comprises an AlGaN layer, an InGaN layer and a P-type AlGaN layer in sequence, the AlGaN layer is adjacent to the well layer, and the P-type AlGaN layer is adjacent to the barrier layer; the cap layer structure protects the well layer from thermal shock and ensures the crystal quality of the well layer.

This invention discloses a graphene-coated silicon nanocomposite material, its preparation method, and its application, belonging to the field of battery materials technology. The preparation method of this composite material includes: firstly, removing the oxide layer on the surface of the silicon nanocomposite and performing plasma activation to obtain silicon nanocomposite with active sites and functional groups on the surface; dispersing it in a carbon source precursor solution, mixing it evenly, and then centrifuging and drying it at low temperature to obtain a silicon-coated precursor; under inert gas protection, carbonizing the silicon-coated precursor at 500-700℃ and simultaneously introducing it into a catalyst precursor, then introducing a carrier gas containing hydrogen and carbon, and heat-treating it at 800-950℃; finally, acid washing, water washing, and drying to obtain the target material. This invention achieves low-temperature controllable growth of graphene by optimizing process parameters. In the prepared core-shell composite material, 1-30 few-layer graphene shells are tightly bonded to the silicon nanocomposite core. When used as a negative electrode active material for lithium-ion batteries, it exhibits high specific capacity, excellent cycle stability, and rate performance. The process is easily scalable and has promising application prospects.

The present invention provides a device and method for liquid phase growth of silicon carbide crystals, belonging to the field of crystal growth technology, the device includes a crucible assembly, a seed crystal rod assembly, a heating assembly located outside the crucible assembly, and a heat preservation assembly wrapping the crucible assembly, the seed crystal rod assembly and the heating assembly; the crucible assembly includes a first crucible and a second crucible arranged in sequence from outside to inside; the first crucible is provided with a detachable crucible cover, and the crucible cover is provided with a fixing component for fixing the seed crystal rod assembly; the inner bottom surface of the first crucible is provided with a boss; the outer bottom of the second crucible is provided with a groove matching the shape of the boss, and the middle of the groove is provided with a pushing assembly for pushing, pulling and rotating the second crucible; the pushing assembly passes through the bottom of the first crucible, the heating assembly and the heat preservation assembly in sequence. The device provided by the present invention can ensure the temperature stability of the silicon carbide crystal growth process, while avoiding the problem of excessive jitter during the seed crystal pulling and rotation process.