315results about How to "Low growth temperature" patented technology

The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

The invention relates to a method for preparing a graphene film in a low-temperature condition. The method at least comprises the following steps: (1), performing smooth treatment on a metal substrate; (2), performing doping of a chemical reagent on the surface of the metal substrate obtained in the step (1); (3), under a protective atmosphere, performing annealing treatment on the metal substrate obtained in the step (1); (4), contacting the metal substrate with a carbon source, and performing chemical vapor deposition in the low-temperature condition to obtain the graphene film; and optionally, after the step (4), performing step (5), stopping heating, cooling to the room temperature, and taking out the metal substrate with the graphene film thereon, wherein the chemical reagent is a precursor salt of metal. The method for growing the graphene film is low in growth temperature, low in cost, high in industrialized feasibility and wide in select range of the substrate, and can prepare the complete single-layer or multi-layer graphene film with high quality.

A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.

The invention provides a laminated transparent electrode and a preparation method thereof. The laminated transparent electrode sequentially comprises a transparent substrate, a first-layer metal oxide film on the transparent substrate, a metal nanowire network layer on the first-layer metal oxide film, and a second-layer metal oxide film covering the metal nanowire network layer and the first-layer metal oxide film not covered by the metal nanowire network layer. A preparation method of the metal nanowire network layer comprises the steps of preparing a metal film layer on the first-layer metal oxide film, preparing a high-polymer nanofiber network on the metal film layer by using an electrostatic spinning technique, removing the metal film that is not covered by the high-polymer nanofiber network through etching by taking high-polymer nanofiber as a mask, and removing the high-polymer nanofiber network. The laminated transparent electrode has the advantages of high light transmissivity, low resistivity, firm contact with the substrate, smooth surface, low preparation and growth temperature, low cost and the like, and can be widely applied to various organic and inorganic photoelectric devices.

The invention discloses a solar blind ultraviolet photoelectric detector based on an amorphous gallium oxide film and a preparation method thereof, and belongs to the technical field of photoelectricdetectors. The method comprises the steps that the crystal face (0001) Al2O3 is adopted as a substrate, and the substrate is cleaned; then, the cleaned substrate is fed into a settling chamber, a radio frequency magnetic control sputtering technology is applied to the substrate to grow a gallium oxide film; finally, a hollow interdigital mask plate is used for shielding on the amorphous gallium oxide film, a direct current magnetic control sputtering method is adopted for sputtering an interdigital metal electrode on the interdigital mask plate to obtain the solar blind ultraviolet photoelectric detector, the structure is an MSM type sandwiched structure, and the Al2O3 substrate, the amorphous gallium oxide film material and the Ti/Au interdigital metal electrode are arranged from bottom to top. The manufacturing technology is simple, the repeatability is good, dark current is small, the stability is high, the response speed is high, the ultraviolet visible restrain ratio is high, andthe detector conforms to the energy-saving and emission-reducing theory, is suitable for large-scale production, and has the wide development prospect.

The present invention relates to a preparation method of silicon epitaxial wafer for power VDMOS tube. Firstly, selection and usage of substrate are important, the selected substrate not only can meet the requirements for device, but also can meet the requirements for epitaxy. Its preparation method includes the following steps: selecting proper gas corrosion flow and gas corrosion time, reducing concentration of gas corrosion impurity in epitaxial reactor so as to reduce self-doping in epitaxial growth process; first layer epitaxial growth, on the substrate surface with high concentration utilizing lower temperature to grow a layer of purity epitaxial layer, encapsulating substrate surface and edge, controlling its growth temperature, growth rate and epitaxial time so as to make encapsulating layer obtain ideal effect, at the same time, selecting proper epitaxial condition to make the deformation of epitaxial wafer be minimum; and second layer epitaxial growth, utilizing tower temperature to grow a layer of epitaxial layer whose resistivity and thickness can meet requirements for device.

The invention discloses a MoSe ₂ Nanosheet Composite Firework-like TiO ₂ Nanorod arrays, which include TiO ₂ Nanorod arrays and MoSe ₂ nanosheets; the MoSe ₂ nanosheets are uniformly and massively distributed in the TiO ₂ The surface of the nanorod array has good recombination on the array surface; the TiO ₂ Nanorod arrays are made of TiO ₂ self-assembled nanorods. The present invention also discloses that the MoSe ₂ Nanosheet Composite Firework-like TiO ₂ Fabrication of nanorod arrays using a two-step solvothermal method to make MoSe ₂ Nanosheets uniformly grown on fireworks-like TiO ₂ On the nanorod array, a material with good composite morphology is obtained. The prepared semiconductor material has increased spectral absorption range and specific surface area, reduced carrier recombination probability, good photocatalytic degradation performance, and has great application potential in the field of photocatalytic degradation. The preparation method of the invention has the advantages of simple operation, high yield, low preparation cost and the like.

The invention relates to a method for self-assembly growth of three-dimensional orderly porous materials, which is a method for self-assembly growth of multi-component material colloid crystals with single structures or composite structures and three-dimensional orderly porous membranes by combining assistant acceleration of evaporation through characteristic infrared light and the control of the boiling temperature of a solvent by decompression. The method basically overcomes the defect that the prior method is not suitable for the situations of overlarge colloid particles, overhigh boiling point of the solvent in a colloidal solution system, no high temperature resistance of the colloid particles, incapability of completing crystal growth and so on when the prior method is applied to cooperated self-assembly growth of the multi-component colloid crystals and three-dimensional orderly porous materials of the multi-component colloid crystals. The method has the characteristics of high efficiency, easy control, simple operation and good repeatability, can grow the high-quality multi-component colloid crystals and the three-dimensional orderly porous membranes, and is suitable for self-assembly and cooperated self-assembly of multi-component colloid particle mixed systems with various particle diameters and various varieties.

The invention provides an InGaN-based blue-green light-emitting diode epitaxial growth method and a structure thereof, wherein the growth method of the epitaxial structure comprises specifically the following steps: performing a high temperature annealing process on a sapphire substrate in an ammonia atmosphere, reducing the temperature to 530-580 degrees and adjusting epitaxial growth atmosphere to grow a low temperature InGaN nucleation layer, and then raising the temperature and sequentially growing an InGan unintentionally doped layer, an n-type InGaN layer, an InyGa1-yN/InxGa1-xN(y> x) multi-quantum well active layer, A p-AlInGaN electron blocking layer, A p-type InGaN layer and the p++ type InGaN contact layer. The InGaN-based blue-green LED epitaxial structure provided in the present invention can effectively reduce the piezoelectric polarization field in an active area to thereby improve light emitting efficiency since the structure reduces lattice mismatch between a quantum well material and a matrix material.

The invention discloses a perovskite battery based on a nanometer oxide electron transfer layer. According to the structure, the perovskite battery comprises a first electrode, the nanometer oxide electron transfer layer, a perovskite structure light absorption layer, a hole transporting layer and a counter electrode. A two-dimension nanometer structure is a nanoscale titanium dioxide film and a zinc oxide film or a multiple-layer film based on titanium dioxide, zinc oxide and aluminum oxide. A one-dimension nanometer structure is nanoscale titanium dioxide and zinc oxide which are in the shape of a tube or a wire or a rod or a composite nanoscale structure which is in the shape of a tube or a wire or a rod and based on titanium dioxide, zinc oxide and aluminum oxide. The perovskite battery based on the nanometer oxide electron transfer layer has the advantages that the manufacturing process is simple, the growth temperature of the nanometer oxide electron transfer layer is low, and the quality of the nanometer oxide electron transfer layer is high; in addition, the perovskite battery based on the nanometer oxide electron transfer layer can be used in not only a hard substrate but also a flexible substrate.

This invented P-Zn1-xMgxO crystal film is one doped by one or several in B, Al, Ga and In as the donor and one or several of N, P, AS gases as the acceptor, the molar content of X is larger than 0 smaller than 40%, and the doped density is 1015~1019cm[-3]. The film is prepared by pulse laser deposition, the target is a ceramic one sintered with pure ZnO, MgO and donor doping agent powder, among which, the molar content of MgO is larger than 0 but smaller than 40%, that of the donor doping agent is larger than 0 but smaller than 3%, the grown temperature is 400~700deg.C, the grown atmosphere is a mixed gas containing the acceptor activated by plasma and pure O2, the doped density can be controlled by adjusting different intrinsic stand-off ratios of the input gas with acceptor and O2 and molar content of the donor doping agents in the target material and the successive annealing temperature.

The invention relates to a BaGa2GeSe6 compound, a BaGa2GeSe6 non-linear optical crystal and their preparation methods and use. The BaGa2GeSe6 compound is prepared by a solid-phase reaction. The BaGa2GeSe6 non-linear optical crystal grows by a high-temperature melt spontaneous crystallization method or a Bridgman-Stockbarger method. In growth, the BaGa2GeSe6 non-linear optical crystal easily grows, is transparent and is not coated. The BaGa2GeSe6 non-linear optical crystal has the advantages of fast growth rate, low growth temperature, low cost, and easiness of production of large-size crystals. The BaGa2GeSe6 non-linear optical crystal has a wide light transmittance wave band, large hardness and good mechanical properties, is broken and air-slaked difficultly, and is processed and preserved easily. The BaGa2GeSe6 non-linear optical crystal can be used for manufacture of non-linear optical devices.

The invention discloses a method of preparing a three-dimensional graphene glass composite, which comprises the steps of providing a glass substrate, and directly growing graphene on the surface of the glass substrate by a plasma-enhanced chemical vapor deposition method. Compared with graphene glass prepared by the traditional transfer and oxidation reduction method, the preparation method is simple; cohesion with the glass substrate is high; vertical height control of a graphene nanosheet is precise; and the repeatability is high. In addition, the preparation method adopts the most common soda lime glass in daily life of people, so that compared with quartz glass and sapphire glass used in other experiments, the cost is greatly lowered. The method can realize uniform, controllable and quick preparation of graphene glass below the glass softening point temperature (600 DEG C), requires no catalyst, greatly simplifies a preparation growth technology of the graphene glass, and provides a premise for a subsequent industrial application.

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the field of a semiconductor technology. The gallium nitride-based light emitting diode epitaxial wafer comprises a sapphire substrate, and an AlN buffer layer, a 3D nucleating layer, a non-doped GaN layer, an N type layer, a multi-quantum-well layer, an electronbarrier layer and a high-temperature P type layer which are laminated on the sapphire substrate in sequence; the 3D nucleating layer comprises a first sub layer and a second sub layer; the first sub layer is a GaN layer grown at a temperature of 800-1,100 DEG C; and the second sub layer is a GaN layer grown at a temperature of 1,000-1,200 DEG C. The lower the growth temperature of the first sub layer is, the formed crystal particles are smaller and more intensive; the crystal particles are stretched and deformed to close gaps to lower surface energy, so that tensile stress is generated, and the epitaxial wafer is to be concave, thereby improving warping and improving wavelength concentration degree; and the temperature of the second sub layer is higher, the surface energy of the crystal particles is lower, so that it is ensured that warping of the whole epitaxial wafer is not caused, thereby improving the photoelectric performance of the LED chip.

Growing method of alkali metals, chalcogene compounds crystal of gallium or indium, involves synthesis and crystal growth of a type alkali metals, chalcogene compounds crystal of gallium or indium ATrQ2(A=Li,Na,K,Rb,Cs;Tr=Ga,In;Q=S,Se,Te)the synthesis and crystal growth. The purpose of this invention is to combine the synthesis of alkali metals, chalcogene compounds crystal of gallium or indium ATrQ2 and growth technology of flux crystal. Choose alkaline earth metal chalcogene compounds, chalcogene compounds of gallium or indium and proper alkaline metal halide flux for raw materials, through reaction flux method to prepare and grow alkali metals, gallium or indium sulfur compounds ATrQ2 crystal.

The invention discloses a three-dimensional MoS2 / SnO2 heterogeneous semiconductor nano material comprising a MoS2 nanostructure substrate material and SnO2 nanorod crystals uniformly grown on the MoS2 nanostructure substrate material; the MoS2 nanostructure substrate material comprises MoS2 nano sheets, and P-N heterojunction is formed on the interface of the MoS2 nanostructure substrate material and the SnO2 nanorod crystals. The invention also discloses a preparation method of the three-dimensional MoS2 / SnO2 heterogeneous semiconductor nano material. The three-dimensional MoS2 / SnO2 heterogeneous semiconductor nano material has the advantages of scale growth, low growth temperature, low cost and low toxicity of preparation materials, higher repeatability and the like, and has great potential applications in photocatalysis, field emission and other fields.

The invention discloses a zinc oxide based semiconductor luminous component and a manufacturing method thereof. According to the manufacturing method of the invention, firstly, a substrate is prepared, and then a zinc oxide based multilayer structure is formed on or above the substrate by a process based on atomic layer deposition, wherein the zinc oxide multilayer structure contains a luminous area.

The invention discloses a method for preparing a silica-based gallium arsenide material structure applied to an n-channel metal oxide semiconductor (nMOS). The method comprises the following steps of: 1, growing a silicon dioxide layer on a silicon substrate 1; 2, etching a plurality of trenches along the <110> direction of the silicon substrate on the silicon dioxide layer by adopting conventional photoetching and aspect ratio trapping (RIE) methods; 3, washing the trenches by using piranha, SC2, hydrogen fluoride (HF) and de-ionized water to remove residual silicon dioxide layer at the bottom of each trench and expose the silicon substrate; 4, growing gallium arsenide (GaAs) buffer layers in the trenches by adopting a low voltage metal organic chemical vapor deposition (MOCVD) method, and growing GaAs top layers on the GaAs buffer layers in the trenches; and 5, polishing the parts, above the trenches, of the GaAs top layers to make the GaAs top layers flush with the silicon dioxide layer to finish preparing the material structure by adopting a chemical mechanical polishing method.

The invention discloses a molybdenum disulfide nano-hydrangea structural semiconductor material. The molybdenum disulfide nano-hydrangea structural semiconductor material comprises hierarchical nano-balls, wherein each nano-ball is formed by agglomerating molybdenum disulfide nano scales with the thickness of 2 to 4 nm. The invention further discloses a preparation method for the molybdenum disulfide nano-hydrangea structural semiconductor material. The molybdenum disulfide nano-hydrangea structural semiconductor material is synthesized by a one-step hydrothermal method, and is prepared by respectively dissolving sodium molybdate, thioacetamide and oxalic acid, mixing and reacting. The molybdenum disulfide nano-hydrangea structural semiconductor material and the preparation method thereof have the advantages of low cost, relatively low growth temperature and relatively high repeatability, and have a wide application prospect in the aspect of field emission.

The invention relates to gallium oxide crystals with thermoluminescence performance and a preparation method thereof. The gallium oxide crystals comprise gallium oxide and Ge4+ doped in gallium oxide, and the doping concentration preferably ranges from 0.1 mol% to 10 mol%. The gallium oxide crystals are prepared through a mode guide method. Compared with the prior art, the germanium-doped gallium oxide crystals have the good thermoluminescence performance, and the Ge4+ doping concentration can be controlled. A mixed atmosphere of Ar and CO2 is adopted, Ar gas and CO2 gas introduced at different stages are combined, decomposition and volatilization of the gallium oxide crystals in the growing process are effectively restrained, and the crystals are short in growth period and low in cost.

The invention relates to a method immunoassay by utilizing zinc oxide quantum dots. Horse radish peroxidase is assembled on an upper layer of quantum dots and then an antibody is assembled on an outer layer. Meanwhile, a zinc oxide nanometer rod grows on a golden electrode, andan antibody is also assembled on the zinc oxide nanometer rod. An antigen to be measured and the antibody on the quantum dots are combined with the antibody on the zinc oxide nanometer rod through specific combination of the antibody and the antigen, a very small amount of antigens is used for connecting the quantum dots assembled with a large amount of horse radish peroxidase to the golden electrode of the zinc oxide nanometer rod, electrochemical response of catalytic action of the horse radish peroxidase to peroxide is detected, and then the relationship of antigen concentration and electrochemical signals of catalytic action of the horse radish peroxidase to peroxide is established. The detection method makes antigen with very low concentration generate obvious electrochemical catalytic signals, and plays a role of signal amplification. The invention has important implications in the aspects of early detection of diseases in medical field.

A reactor for film deposition having a first heating unit and the second heating units is described. The temperature of each heating unit is controlled individually by heating and/or cooling means. The first heating unit and the second heating unit are disposed face-to-face to each other to form a reaction region therein, and their inner sides are placed with an inclined angle. At least one substrate is disposed on the inner surface of the first heating unit. The temperature of the second heating unit can be adapted to a temperature higher than the temperature of the first heating unit to improve the thermal decomposition efficiency of input reactants so that a low-temperature film deposition can be accomplished.