3results about How to "Low growth temperature" patented technology

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof and a light emitting diode, and relates to the field of semiconductor photoelectric devices. The light emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an intercalation layer, an electron blocking layer and a P-type GaN layer arranged on the substrate in sequence; the intercalation layer comprises an AlN layer and a superlattice layer; the superlattice layer comprises P-AlN layers, P-InN layers and P-GaN layers which are stacked in sequence, and the number of periods is greater than or equal to 2. By implementing the application, the light emitting efficiency of the light emitting diode can be improved.

The application discloses a preparation method of gamma-phase germanium selenide nanosheets. The application realizes controllable preparation of high-quality gamma-phase germanium selenide nanosheets by adopting a normal-pressure vapor deposition method and based on a rapid cooling strategy. The application realizes controllable growth of gamma-phase germanium selenide nanosheets with different lateral sizes by controlling growth temperature. The application does not need to plate a catalyst such as gold on a substrate surface, and the preparation process is relatively simple. The prepared gamma-phase germanium selenide nanosheets have great application potential in flexible sensors, photoelectric devices, especially near-infrared photoelectric detectors and the like. The gamma-phase germanium selenide nanosheets prepared by the application are still very stable after being placed in air for half a year, and also provide a good experimental platform for subsequent physical property research on the material.

This invention discloses a graphene-coated silicon nanocomposite material, its preparation method, and its application, belonging to the field of battery materials technology. The preparation method of this composite material includes: firstly, removing the oxide layer on the surface of the silicon nanocomposite and performing plasma activation to obtain silicon nanocomposite with active sites and functional groups on the surface; dispersing it in a carbon source precursor solution, mixing it evenly, and then centrifuging and drying it at low temperature to obtain a silicon-coated precursor; under inert gas protection, carbonizing the silicon-coated precursor at 500-700℃ and simultaneously introducing it into a catalyst precursor, then introducing a carrier gas containing hydrogen and carbon, and heat-treating it at 800-950℃; finally, acid washing, water washing, and drying to obtain the target material. This invention achieves low-temperature controllable growth of graphene by optimizing process parameters. In the prepared core-shell composite material, 1-30 few-layer graphene shells are tightly bonded to the silicon nanocomposite core. When used as a negative electrode active material for lithium-ion batteries, it exhibits high specific capacity, excellent cycle stability, and rate performance. The process is easily scalable and has promising application prospects.