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Solar blind ultraviolet photoelectric detector based on amorphous gallium oxide film and preparation method thereof

A technology of electrical detectors and gallium oxide, applied in the field of photodetectors, can solve the problems of high growth temperature, slow response speed, and small suppression ratio of gallium oxide ultraviolet detectors, and achieve simple manufacturing process, small dark current, and low suppression ratio high effect

Inactive Publication Date: 2018-10-16
BEIJING UNIV OF POSTS & TELECOMM
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the shortcomings of the above-mentioned existing high-temperature crystallized gallium oxide ultraviolet detectors, such as high growth temperature, large dark current, small ultraviolet-visible suppression ratio, and slow response speed, a solar-blind ultraviolet detector based on amorphous gallium oxide thin film is provided. Photodetector and its preparation method

Method used

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  • Solar blind ultraviolet photoelectric detector based on amorphous gallium oxide film and preparation method thereof
  • Solar blind ultraviolet photoelectric detector based on amorphous gallium oxide film and preparation method thereof
  • Solar blind ultraviolet photoelectric detector based on amorphous gallium oxide film and preparation method thereof

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Embodiment

[0025] In this embodiment, the preparation method of a solar-blind ultraviolet photodetector based on an amorphous gallium oxide thin film, the specific steps are as follows:

[0026] Step 1: Select a piece of C-face sapphire as the substrate, and the cleaning process is as follows:

[0027] Soak the substrate in about 15mL of acetone, absolute ethanol, and deionized water for 15 minutes, respectively, and ultrasonically clean it for 15 minutes. After taking it out, rinse it with flowing deionized water, and then wash it with dry N 2 Air dry, waiting for the next use;

[0028] Step 2: Send the cleaned sapphire substrate into the deposition chamber, and apply magnetron sputtering technology to grow amorphous gallium oxide film on it; growth adopts high-purity gallium oxide target material (~99.99%), at low temperature Under these conditions, a pure amorphous gallium oxide film can be obtained.

[0029] The specific parameters of the magnetron sputtering technology are as foll...

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Abstract

The invention discloses a solar blind ultraviolet photoelectric detector based on an amorphous gallium oxide film and a preparation method thereof, and belongs to the technical field of photoelectricdetectors. The method comprises the steps that the crystal face (0001) Al2O3 is adopted as a substrate, and the substrate is cleaned; then, the cleaned substrate is fed into a settling chamber, a radio frequency magnetic control sputtering technology is applied to the substrate to grow a gallium oxide film; finally, a hollow interdigital mask plate is used for shielding on the amorphous gallium oxide film, a direct current magnetic control sputtering method is adopted for sputtering an interdigital metal electrode on the interdigital mask plate to obtain the solar blind ultraviolet photoelectric detector, the structure is an MSM type sandwiched structure, and the Al2O3 substrate, the amorphous gallium oxide film material and the Ti / Au interdigital metal electrode are arranged from bottom to top. The manufacturing technology is simple, the repeatability is good, dark current is small, the stability is high, the response speed is high, the ultraviolet visible restrain ratio is high, andthe detector conforms to the energy-saving and emission-reducing theory, is suitable for large-scale production, and has the wide development prospect.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to a preparation method of a solar-blind ultraviolet photodetector based on an amorphous gallium oxide thin film. Background technique [0002] The solar-blind ultraviolet detector is a very important photoelectric sensing device. It has become another important photoelectric detector after infrared and laser detector technology. It has a relatively broad application in military, civilian, scientific research and industrial fields. application. At present, the solar-blind ultraviolet detectors that are widely used in the market mainly include silicon-based ultraviolet photocells and photomultiplier tubes. Low, expensive and other disadvantages. In recent years, wide bandgap semiconductor materials, such as SiC, GaN, AlGaN, and diamond, have the advantages of wide bandgap, high critical breakdown electric field, and high thermal conductivity. However, the product...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L31/108H01L31/0376C23C14/35C23C14/18C23C14/08
CPCC23C14/08C23C14/185C23C14/35H01L31/0376H01L31/1085H01L31/206Y02E10/50Y02P70/50
Inventor 吴真平王月晖支钰崧焦雷张晓陈政委唐为华
Owner BEIJING UNIV OF POSTS & TELECOMM
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