708 results about "Radio frequency magnetron sputtering" patented technology

The invention relates to a DLC infrared anti-reflection protective film and a preparation method thereof. The infrared anti-reflection protective film has the anti-reflection effect at a wider infrared band and simultaneously ensures that an optical element after being filmed has the capacity of abrasion and corrosion resistance. The infrared anti-reflection protective film adopts the structure that a double-layer film is prepared on ZnSe(1); and the refractive index n1 of a first layer of high refractive index film is 1.8 to 2.5, and the thickness d1 thereof is within the scope of about 0.25 Lambada / n1; the refractive index n2 of a second layer of high refractive index film is 0.1 less than that of the first layer of high refractive index film at least, and the thickness d2 thereof is within the scope of about 0.25 Lambada / n (wherein, Lambada is the anti-reflection central wavelength of the infrared anti-reflection film). The preparation method comprises the step of depositing diamond like carbon (DLC) anti-reflection film on double sides or single side of a transparent basal body by adopting the unbalanced intermediate frequency or radio frequency magnetic control sputtering method and taking graphite as a target source, and hydrocarbon and Ar mixed gas or pure Ar as auxiliary discharge gas. Two layers of DLC films with different refractive indexes are prepared through controlling depositing parameters; and the thickness required for each film is obtained through controlling the time. The method has the advantages of convenient control of the depositing parameters of the films, less interference among the depositing parameters, and better anti-reflection effect and abrasion and corrosion resistance.

A gas-timing control method for depositing metal oxynitride and transition metal oxynitride (Mx(ON)y) films on glass and flexible substrates using reactive radio frequency magnetron sputtering, without substrate heating. A system includes a sputtering chamber, substrates, targets, three mass flow controllers controlled respective flow rates of argon, nitrogen and oxygen gases alternately and intermittently into the sputtering chamber, and a radio frequency generator with 13.56 MHz which irradiated in the sputtering chamber to decompose sputtering gases. The flow rate ratio of oxygen+nitrogen / argon is at least 0.02, the flow rate ratio of oxygen / nitrogen is at least 0.01, and the sequence timing of argon, nitrogen and oxygen gases alternately or mixed into the sputtering chamber at least 1 sec.

The invention relates to a method for depositing a metal or hard ornament film on a plastic substrate. In the method, the metal or hard ornament film is prepared on the surface of a plastic substrate material by using a radio frequency magnetron sputtering technology, and good binding force exists between the prepared ornament film and the substrate. The plastic substrate material comprises ABS plastic (terpolymer of acrylonitrile-butadiene-styrene), PMMA (polymethyl methacrylate) organic glass, PE (poly ethylene) plastics, PP (polypropylene) plastics and the like. The metal ornament film comprises chromium, nickel, titanium, aluminum, aurum, silver, iridium or alloys and the like, and the hard ornament film comprises metal nitrides, carbon compounds, oxides, diamonds and the like. The method has the advantages of simple operation, no pollution and low cost, and the prepared film is good in adhesive force.

The invention discloses a growth method of a compound semiconductor epitaxial layer on a silicon substrate and a device structure with the epitaxial layer. The method comprises the steps of providing a single-crystal silicon substrate, carrying out surface processing on the single-crystal silicon substrate, depositing an AlN layer step by step through a radio frequency magnetron sputtering deposition method on the single-crystal silicon substrate, and depositing an AlN layer, or a GaN layer or an AlGaN layer on the AlN layer through an organometallic chemistry vapor deposition method or a hydride vapor phase epitaxy method. The AlN layer comprises an AlN nucleating layer used for controlling AlN crystal orientation and an AlN buffering layer used for controlling AlN crystal stress, and the AlN buffering layer is thicker than the AlN nucleating layer. The method effectively avoids the cracking and dislocation phenomenon caused by thermal mismatching and lattice mismatching, improves the crystal quality of the epitaxial layer, and enhances device performance.

The invention relates to an ultraviolet detector, in particular to a visible-blind ultraviolet detector based on a Beta-Ga2O3 / SiC heterojunction thin film and a fabrication method of the visible-blind ultraviolet detector. According to the fabrication method, a layer of Beta-Ga2O3 thin film is deposited on an n-type 6H-SiC substrate by a laser molecular beam epitaxial technique, and then a layer of Ti / Au thin film is deposited on the n-type 6H-SiC substrate and the Beta-Ga2O3 thin film through a mask by a radio frequency magnetron sputtering to be used as an electrode. The fabricated visible-blind ultraviolet detector has the advantages of stable performance, response sensitivity, small dark current and high potential application; and moreover, the fabrication method has the characteristics of high process controllability, simplicity in operation, high universality, restorability of repeated test and the like, and has great application prospect.

The invention discloses a method for preparing a transparent ZnO-based thin film transistor array. The method adopts a preparation process of four peeling processes, uses radio frequency magnetron sputtering technology to grow a ZnO-based thin film, and anneals the ZnO-based thin film in oxygen to obtain improve its electrical properties. The thin film transistor array uses transparent conductive films such as ITO, ZnO:Al or ZnO:Ga as gate, source and drain electrodes, and uses SiO2, Al2O3, SiNX and other films as insulating layers. The experiment shows that the transmittance of the ZnO-based thin film transistor array in the visible light band reaches 85%, which provides a new way for the development of high-performance flat panel display arrays.

The invention relates to a nitrogen doped titanium dioxide film of hydrophobicity and ultraviolet resistance, and its preparation. The character of film lies in that nitrogen exists in titanium dioxide crystal lattice in substitution and clearance mode, still a portion of Ti exist in Ti<3+> ion mode. film crystallization may be red schorl, anatase and amorphism. Titanium dioxide film prepared using direct current and radio-frequency magnetron sputtering method has good hydrophobic effect. Contact angle of film to distilled water is 97-110 DEG, ultraviolet cut-off wavelength is above 390nm, and visible light average transmittance is 70%-80%. Hydrophobicity of film is not influenced by film exposition time in air. The invention is easily operated, and the film thickness and composition can be controlled. Nitrogen doped hydrophobic film can be prepared for sample of different specification, material quality, and shape.

The invention discloses a preparation method of aluminum nitride piezoelectric thin film. The preparation method is characterized in that the preparation method comprises the steps that step one, a substrate is cleaned, aluminum is taken as target material; step two, the substrate is sent into a magnetic controlled sputter; step three, a radio frequency magnetic controlled sputtering method is adopted to deposit aluminum nitride polycrystalline film with compressive stress or tensile stress; step four, the radio frequency magnetic controlled sputtering method is adopted to deposit aluminum nitride polycrystalline film with corresponding compressive stress or tensile stress on the aluminum nitride polycrystalline film obtained in the step three; step five, the step three and the step four are performed repeatedly and alternatively to obtain aluminum nitride polycrystalline film. The aluminum nitride polycrystalline film obtained by adopting the method has low stress and long service life, and the preparation method is simple, the reaction step is fewer, and the operation is easy.

The invention relates to a radio frequency magnetron sputtering method to prepare superhard TiB2 / TiAIN nano-multilayers. By adopting the radio frequency magnetron sputtering technology, a radio-frequency power supply is used to excite plasma to sputter TiB2 and TiAI ceramic targets. Multilayers of TiB2 and TiAIN are deposited on a one-side polished Si (100) substrate. A mechanical pump and a molecular pump are adopted to pump the air pressure in a vacuum chamber to 3.0X10<-4> Pa to 1.0X10<-4> Pa. When TiB2 is deposited, pure argon gas is sputtered. The flow of argon gas is controlled with a mass flow controller, and is kept to be 4sccm to 60sccm. When TiAIN is deposited, argon gas and nitrogen gas are sputtered; and the ratio of nitrogen gas to argon gas is changed from 1:1 to 1:50. During the complete deposition process, the total working air pressure is: 0.1 Pa to 0.8 Pa when TiB2 is deposited; 0.2 Pa to 1.0 Pa when TiAIN is deposited. The cycle of the multi-layers is 30 layers to 200 layers. The novel superhard TiB2 / TiAIN nano-multilayers have the overall characteristics of high hardness, low internal stress, high binding force of the layer base. The novel superhard TiB2 / TiAIN nano-multilayers have important application prospects in reinforced films on the surface of knife edges and moulds.

The invention belongs to the technical field of the information memory and particularly relates to a ferroelectric oxide / semiconductor sequentially composite film diode resistance change memory. The resistance change memory comprises a substrate, a bottom electrode, a ferroelectric oxide / semiconductor composite memory function layer and a top electrode, and is prepared by the following method which comprises the following steps: developing compound electrodes, such as strontium ruthenium, lanthanum nickel and the like, or metal on the monocrystal strontium titanate or SiO2 / Si substrate to serve as the bottom electrode; then developing the ferroelectric oxide / semiconductor composite film function layer by a pulsed laser deposition or radio frequency magnetron sputtering method; and developing the metal top electrode to form a single diode memory unit structure. The polarity of the diode changes with the orientation of the electric domain. The ferroelectric oxide / semiconductor composite film diode resistance change memory has the advantages of high memory density, good information retentivity and low power consumption.

The invention provides a high-entropy alloy coating preparation technology of a tool die, which comprises the following steps of: preparing a NiCoFeCrTi high-entropy alloy material from Ni, Co, Fe, Cr and Ti at an equimolar proportion; sputtering a high-entropy alloy nitride film coating on a hard alloy base body by a radio-frequency magnetron sputtering method by taking the NiCoFeCrTi high-entropy alloy material and a single element material as target materials; and finally, putting the high-entropy alloy nitride film coating in an air atmosphere furnace, oxidizing at 500-1,000 DEG C in the air atmosphere furnace for 1 hour, introducing nitrogen and performing heat treatment at 500-1,000 DEG C for 1 hour. The high-entropy alloy coating preparation technology of a tool die provided by the invention obviously improves the hardness, wear resistance and toughness of the coating while guaranteeing good high-temperature stability of the coating and high binding strength with the base body.

The invention provides a low-cost preparing method for a high-temperature superconductive coated conductor strip and belongs to the technical field of manufacturing of high-temperature superconductive materials. The low-cost preparing method comprises the following steps that (1) the surface of a metal base band is cleaned; (2) by the adoption of the chemical solution deposition planarization (SDP) method, an isolating layer is prepared on the metal base band; (3) by the adoption of an ion beam auxiliary radio frequency magnetron sputtering method (IBAD-MgO), a biaxial texture magnesium oxide layer is prepared on the isolating layer; (4) a lanthanum manganate layer is prepared by the adoption of the radio frequency magnetron sputtering method; (5) a cerium oxide layer is prepared by the adoption of a direct-current magnetron reactive sputtering method; (6) a superconductive layer is prepared by the adoption of a metal organic deposition decomposition method (MOD); (7) a silver protective layer is prepared by the adoption of a direct-current magnetron sputtering method; (8) annealing is conducted in high-purity oxide; (9) a copper stable layer is arranged in an electroplating mode according to use requirements. According to the low-cost preparing method for the high-temperature superconductive coated conductor strip, through comprehensive application of physical preparation methods and chemical preparation methods, high-temperature superconductive strips can be produced in a large-scale mode at low cost.

The invention discloses a solar blind ultraviolet photoelectric detector based on an amorphous gallium oxide film and a preparation method thereof, and belongs to the technical field of photoelectricdetectors. The method comprises the steps that the crystal face (0001) Al2O3 is adopted as a substrate, and the substrate is cleaned; then, the cleaned substrate is fed into a settling chamber, a radio frequency magnetic control sputtering technology is applied to the substrate to grow a gallium oxide film; finally, a hollow interdigital mask plate is used for shielding on the amorphous gallium oxide film, a direct current magnetic control sputtering method is adopted for sputtering an interdigital metal electrode on the interdigital mask plate to obtain the solar blind ultraviolet photoelectric detector, the structure is an MSM type sandwiched structure, and the Al2O3 substrate, the amorphous gallium oxide film material and the Ti / Au interdigital metal electrode are arranged from bottom to top. The manufacturing technology is simple, the repeatability is good, dark current is small, the stability is high, the response speed is high, the ultraviolet visible restrain ratio is high, andthe detector conforms to the energy-saving and emission-reducing theory, is suitable for large-scale production, and has the wide development prospect.

The invention provides a thin-film getter with high gas absorption performance and a preparation method thereof. The thin-film getter is formed by depositing a gas absorbing layer on a metal, silicon, ceramic or glass substrate or on the inner wall of a sealed device or is a film with two-layer structure composed by the gas absorbing layer and an adjusting layer, wherein the gas absorbing layer is multi-component alloy formed by Zr, Co and at least one material selected from the group consisting of Y, La, Ce, Pr and Nd, and the adjusting layer is one or alloy of more selected from the group consisting of Ti, Zr, Y, Hf, Mn, Cu, Cr, Al, Fe, Pt and Ru. The preparation method employs radio frequency magnetron sputtering for deposition of films of the gas absorbing layer and the adjusting layer. The thin-film getter provided by the invention is activated at a temperature in a range of 250 to 350 DEG C, has a high gas absorption rate and high gas absorption capacity, overcomes the problems of poor adhesion, low preparation efficiency and easy poisoning during activation of conventional thin-film getters and can meet design requirements for a vacuum working environment needed for realizing high reliability and a long service life of micro-electromechanical systems (MEMS), flat-panel displays (OLED / FED / LCD), solar heat-insulating boards and hydrogen-sensitive microelectronic devices.

The invention discloses a ZnO / ZnMgO multi-quantum trap ultraviolet laser diode and a preparation method thereof. The substrate of the ultraviolet laser diode is n-shaped GaN growing on a sapphire, a ZnO / Zn1-xMgxO multi-quantum trap active layer formed by alternately depositing ZnoO and Zn1-xMgxO, a p-shaped NiO thin film layer and a second electrode are sequentially arranged on the substrate from bottom to top, and a first electrode and the ZnO / Zn1-xMgxO multi-quantum trap active layer are deposited on an n-shaped GaN film layer in parallel. The preparation method of the ZnO / ZnMgO multi-quantum trap ultraviolet laser diode comprises the following steps of: firstly preparing the ZnO / Zn1-xMgxO multi-quantum trap active layer on the substrate by using a radio-frequency magnetic-control sputtering process; then sputtering the p-shaped NiO thin film layer on the n-shaped ZnO thin film layer; and finally making the first electrode and the second electrode. The ZnO / ZnMgO multi-quantum trap ultraviolet laser diode has the characteristic of favorable electro-ultraviolet free lasing light emitting, the light-emitting peak wavelength is about 373 nm, and the width of single lasing light rays is less than 0.5 nm. The ZnO / ZnMgO multi-quantum trap ultraviolet laser diode has the advantages of simple preparation process, low cost and easy realization of industrialization.

The invention relates to a corrosion-resistant colored decorative film and a preparation method thereof. The method prepares the corrosion-resistant colored decorative film on the surface of a metal material by adopting radio-frequency magnetron sputtering technology, and the prepared decorative film has good bonding force with a substrate. The metal material is zinc, copper, aluminum or alloy of the metals. The decorative film prepared by the method has a double-layer film structure, wherein the first layer is a titanium film, and the second layer is a (carbonized or azotized) titanium film. The method can prepare the acid, alkali and corrosion resistant decorative film with different colors comprising golden yellow, purple, dark blue, silvery white, black and the like. The method has the advantages of no environmental pollution, simple operation, low cost and capability of large-scale production; the prepared film has high quality; and the method is suitable for preparing the decorative film by using the metal material or the similar metal material as a base material.

A display substrate is disclosed comprising: a supporting substrate; an organic resin layer formed on the supporting substrate; and a transparent electrode formed on the organic resin layer, wherein the transparent electrode includes: a first layer containing a zinc oxide and formed in close contact with the organic resin layer; and a second layer containing a zinc oxide and which has a thickness thicker than a thickness of the first layer and is formed on the first layer, wherein the first layer is deposited by either one of a DC sputtering and a DC magnetron sputtering, and the second layer is deposited by any one of a radio frequency sputtering, a radio frequency magnetron sputtering, a radio frequency superimposing a DC sputtering, and a radio frequency superimposing a DC magnetron sputtering, and the display substrate is available, for example, as the substrate having a transparent electrode for counter electrode of liquid crystal display device.

he invention relates to a novel SINP silicone blue-violet battery and a preparation method thereof. The invention uses shallow junctions formed from thermally diffused phosphorus, an ultra-thin SiO2 layer formed by low-temperature thermal oxidization and an ITO dereflection / collection electrode film formed by RF magnetron sputtering to prepares a novel ITO / SiO2 / np blue-violet reinforced SINP silicone photo-battery. Preparation method of the invention is to take a silicon single crystal flake which is P type, and has crystallographic orientation of 100, electric resistivity of 2 2omega.cm and thickness of 220mu m, as a substrate. The substrate is cleaned and is etched by routine chemistry, and then is thermally diffused by POC3 liquid source to form n regions (the invention prepares two pieces of novel SINP photo-batteries, one being routine SINP photo-battery having emitting region square resistance of 10 Omega / square and junction depth of 1 Mu m, and the other one being SINP silicone blue-violet battery having emitting region square resistance of 37 Omega / square and junction depth of 0.4 Mu m). Removing the phosphorosilicate glass (HF:H2O=1:10) at front face; steaming Al at back of the silicon chip; thermally oxidizing the silicon chip at 400 to 500 DEG C and condition of V2:O2=4:1 for 15 to 30min to generate a layer of 15 to 20 ultra-thin SiO2 layer, and at the same time alloying the Al at the back. Then RF magnetron sputtering the ITO dereflection / collection electrode film (ITO film is also deposited on the glass to study electrooptical characteristic thereof) having high transmittance and high conductivity, and sputtering a Cu gate electrode by metal mask direct-current magnetron. Finally, cutting the outer edge part of the battery by a diamond excircle downward cutting / a dicing saw so as to prevent short circuit of the edge of the photo-battery.

The invention discloses an n -zinc oxide / p- nickel oxide heterogeneous pn junction ultraviolet laser diode and a preparation method thereof. The heterogeneous pn junction diode at least comprises a pn junction, a substrate and an ohm contacting electrode, wherein the pn junction is the heterogeneous pn junction by plating a p-type nickel oxide film on an n-type zinc oxide film; and the substrate is a sapphire plated with n-type GaN. The preparation method comprises the following steps: firstly preparing the n-type ZnO film layer on the substrate by the radio frequency magnetron sputtering technology; then sputtering a p-type NiO film layer on the n-type ZnO film layer to form the heterogeneity pn junction; finally manufacturing a pn junction electrode by a sputtering method or a thermal evaporation method; sputtering gold electrodes or platinum electrodes or nickel platinum electrodes or ITO electrodes on the NiO surface; plating indium electrodes or aluminum electrodes or gold electrodes on the GaN or the edge of ZnO; and making the electrodes form ohm contact after annealing alloying. The heterogeneous pn junction diode has the advantages of better electro-ultraviolet lasing luminescence characteristic, peak luminous wavelength of about 375 nm, simple preparation process and low cost.

The invention provides a method for preparing an antioxidant SiC coating on the surface of a graphite material, which comprises the following steps of: adopting an ultrahigh vacuum multifunctional magnetron sputtering coating device, selecting silicon powder with purity of 99.9% as a Si target material, selecting a high-purity argon gas with volume fraction of 99.99% as a sputtering gas, preparing a Si coating on the surface of the graphite material through radio frequency magnetron sputtering, and preparing the antioxidant SiC coating through vacuum heat treatment. The antioxidant SiC coating obtained through the preparation method has good compactness and uniformity, heat impact resistance and good high-temperature antioxidant property; the thickness of the antioxidant SiC coating can be conveniently controlled by regulating the technological parameters of magnetron sputtering and the temperature and the time of vacuum heat treatment; and the large-scale preparation of graphite-based SiC antioxidant coating can be realized through the preparation technology, and the technology has relatively simple process and good repeatability.

A making method of a zinc oxide or aluminum-doped zinc oxide coated lithium cobaltate electrode belongs to the technical field of batteries. In the invention, zinc oxide or aluminum-doped zinc oxide deposited on a routine lithium cobaltate electrode through a radio frequency magnetron sputtering technology as a coating material to obtain the coated and modified lithium cobaltate electrode. The method concretely comprises the following steps: mixing lithium cobaltate powder with a conductive additive, a binder and a solvent, grinding to prepare a slurry, coating a current collector with the slurry, drying the coated current collector to make the routine sheet lithium cobaltate electrode, and depositing the coating layer of zinc oxide or aluminum-doped zinc oxide by adopting the radio frequency magnetron sputtering technology to realize the coating modification of the lithium cobaltate electrode. The method improves the electrode interface situation, effectively inhibit the secondary reactions on the high-potential interval electrode surface, reduces the capacity loss and improves the structural stability of an active material, so the working voltages of the batteries are widened, and the energy density, the power density and the cycle performance of the batteries are improved.

The equipment for preparing solid film Li-ion battery by in-situ deposition process comprises four chambers for depositing film, and a glove box. Different kind of films are prepared in different chamber: DC magnetron sputtering chamber is used to prepare electronic current collector film; DC or RF magnetron sputtering chamber is used to prepare each cathode film; RF magnetron sputtering chamber is used to prepare each electrolyte film; vacuum heat evaporation chamber is used to prepare each metal anode film.

The invention relates to a preparation method of a solar blind type ultraviolet detector based on Ga2O3 / CuAlO2 heterojunction. The method is characterized in that a layer of p-CuAlO2 thin film is deposited on a quartz (SiO2) substrate through a radio frequency magnetron sputtering technology; then, a layer of n-Ga2O3 thin film is deposited on the p-CuAlO2 thin film by using a mask plate through the radio frequency magnetron sputtering technology; the area of the n-Ga2O3 thin film is half of the area of the p-CuAlO2 thin film; finally, a layer of Ti / Au thin film is deposited on the p-CuAlO2 and n-Ga2O3 thin films by the radio frequency magnetron sputtering technology and is used as an electrode. The preparation method has the advantages that the prepared solar blind type ultraviolet detector has stable performance, sensitive response, small dark current and wide application range; in addition, the preparation method has the characteristics of high process controllability, simple operation, good universality, recoverability during repeated test and the like; great application prospects are realized.

The invention, belonging to lithium ion hull cell technical field, relates the method for preparation of LLTO used for solid state thin film lithium battery. The invention adopts the electron-beam vapor deposition method to prepare LLTO, comprising the following characteristics: large film deposit area, big deposition rate, and lithium ion ionic conductivity being 2í‡10-7S / cm. The LiCoO2 or LiMn2O4, LiPON and antiabrasion layer film, which are made with the method of radio-frequency magnetic control sputtering, and the metallic lithium anode film made with the method of vacuum heat evaporation are assembled to solid state thin film lithium battery. The specific capacity of cell is 45mAh / cm2-ª–m and 24mAh / cm2-ª–m, and the cycle index is up to 150 times. So the LLTO solid state electrolyte thin film made by the method of electron-beam evaporation can be used in solid state thin film lithium battery.

The invention relates to an ultraviolet detector, in particular to an ultraviolet detector with high spectral selectivity and high sensitivity and a preparation method of the ultraviolet detector. A beta-Ga<2>O<3> film is deposited on an n-type 4H-SiC substrate through a laser molecular beam epitaxy technique; and a Ti / Au film is deposited on the n-type 4H-SiC substrate and the beta-Ga<2>O<3> film for use as an electrode by a mask through a radio-frequency magnetron sputtering technique. The ultraviolet detector has the advantages that the prepared ultraviolet detector has stable performance, has high selectivity and high sensitivity on an ultraviolet spectrum with a specific wavelength, is low in dark current, and can be applied to fire alarm, high-voltage line corona and detection of the spectrum with the specific wavelength; furthermore, the preparation method has the characteristics of being high in process controllability, simple in operation, good in universality and the like and has a great application prospect; and a repeated test has recoverability.

The invention discloses an AZO transparent conductive film adulterated with Ge and a preparation method thereof. The transparent conductive film is prepared on a glass uropatagia by adopting RF magnetic control in sputtering and codeposition mode. The AZO transparent conductive film adulterated with Ge is composed of0.5-2.5wt% of GE, 1.05wt% of Al, 86.3wt% of Zn and a small quantity of O. The room-temperature specific resistance of the transparent conductive film of the invention is 7-8*10<-4> omega*cm. The average transmission in a range of visual light from 400nm to 800nm reaches 80%-90%. The transparent conductive film made through the RF magnetic control in sputtering and codeposition mode of the invention does not alter crystal structure of ZnO when being adulterated with the Ge simple substance, and the transparent conductive film has good (002) crystal orientation.

The present invention relates to the preparation of P-type zinc oxide film in semiconductor photoelectronic material and device field. By using sapphire or silicon as substrate material and sinteredZnO ceramic target with mixed P2O5 in 5 wt% and Ga2O3 in 0.2 wt% as source material and under proper sputtering gas pressures, sputtering power and higher substrate temperature, RF magnetically controlled sputtering process is adopted to prepare ZnO film with mixed P and Ga.Then, through annealing in vacuum at 800 deg.c and light irradiation for 40 min, P-type ZnO film is prepared. The preparation process of the present invention is simple, low in cost and high in product stability, and the film product has resistivity of 0.1 ohm. Cm and hole density of 10E18 each cu cm.

The invention relates to an ultraviolet detector based on a nanowire array, in particular to an ultraviolet detector based on a gallium oxide nanowire array and a preparation method thereof. The method comprises the steps that a gold thin film is deposited on an Al2O3 sapphire substrate through the radio frequency magnetron sputtering technology, then, spheroidizing annealing is performed on the obtained gold thin film and therefore gold particles are obtained; finally, Ga2O3 nanowire arrays grow on the gold particles. A photoelectric performance testing result of the ultraviolet detector shows that the detector has the good photoelectric response. The ultraviolet detector has the advantages that the obtained ultraviolet detector based on the gallium oxide nanowire array is stable in performance, has the strong photoelectric response to deep ultraviolet ray of a sun blind region, and is sensitive in reaction, small in dark current, capable of being applied to detection of fire alarm, high-voltage power line corona and the like; in addition, the preparation method has the advantages of being high in technological controllability, easy to operate, good in universality and capable of achieving restorability during repeated tests, and has the great application prospect.

The invention belongs to the field of functional materials and relates to a ZnO-based transparent conductive film co-doped with Al-F and a preparation method thereof. The method is characterized in that the method comprises the following steps of: 1) firstly preparing a ZAFO target material, uniformly mixing AlF3, Al2O3 and ZnO powders to prepare the ZAFO target materials with different F contents respectively, wherein the ZAFO target materials contain, by weight percent (wt%): 0.5-3.0 of Al, 0.82-3.28 of F and the balance of ZnO; and 2) installing the prepared ZAFO target materials in the vacuum chamber of radio-frequency magnetism-controlled sputtering deposition equipment; utilizing a mechanical pump and a molecular pump to pump the vacuum chamber so that the vacuum degree is less than 3 multiplied by 10Pa; simultaneously, heating the substrate to the temperature of 25 DEG C-500 DEG C; adjusting the deposition process parameters and preparing the ZAFO transparent conductive film on the substrate by the radio-frequency magnetism-controlled sputtering. The method simplifies the coating process and improves the conductivity of the film and the transmittance of the visible light.

The invention relates to an ultraviolet detection device based on a gallium oxide thin film and a preparation method thereof, in particular to an ultraviolet detection device based on a gold nanoparticle enhanced Ga2O3 thin film and a preparation method thereof. The preparation method includes the steps that a layer of Ga2O3 thin film is deposited on a Si substrate according to the radio-frequency magnetron sputtering technology; then, a layer of gold thin film is deposited on the surface of the Ga2O3 thin film, the obtained gold thin film is subjected to spheroidizing annealing, and thus gold particles are obtained; finally, a layer of gold thin film interdigital electrodes are deposited on the Au-Ga2O3 thin film with a mask. A photoelectric property testing result of the ultraviolet detection device shows that the device has good photoelectric responses. The ultraviolet detection device based on the gold nanoparticle enhanced gallium oxide thin film and the preparation method thereof have the advantages that the prepared ultraviolet detection device based on the gold nanoparticle enhanced gallium oxide thin film is stable in property, capable of making sensitive responses and small in dark current and has good potential application; besides, the preparation method is strong in process controllability, easy to implement and good in universality, has restorability in repeated testing and has broad application prospects.