The invention provides a thin-film getter with high gas absorption performance and a preparation method thereof. The thin-film getter is formed by depositing a gas absorbing layer on a metal, silicon, ceramic or glass substrate or on the inner wall of a sealed device or is a film with two-layer structure composed by the gas absorbing layer and an adjusting layer, wherein the gas absorbing layer is multi-component alloy formed by Zr, Co and at least one material selected from the group consisting of Y, La, Ce, Pr and Nd, and the adjusting layer is one or alloy of more selected from the group consisting of Ti, Zr, Y, Hf, Mn, Cu, Cr, Al, Fe, Pt and Ru. The preparation method employs radio frequency magnetron sputtering for deposition of films of the gas absorbing layer and the adjusting layer. The thin-film getter provided by the invention is activated at a temperature in a range of 250 to 350 DEG C, has a high gas absorption rate and high gas absorption capacity, overcomes the problems of poor adhesion, low preparation efficiency and easy poisoning during activation of conventional thin-film getters and can meet design requirements for a vacuum working environment needed for realizing high reliability and a long service life of micro-electromechanical systems (MEMS), flat-panel displays (OLED/FED/LCD), solar heat-insulating boards and hydrogen-sensitive microelectronic devices.