107 results about "Radio frequency magnetron sputtering" patented technology

The invention relates to the technical field of ITO coating materials, and provides a low-sheet-resistance and high-light-transmittance ITO coating film and a preparation method thereof.The preparation method comprises the steps that S1, an yttrium-doped zirconium oxide substrate is prepared; s2, performing surface activation on the yttrium-doped zirconium oxide substrate; s3, performing magnetron sputtering in a radio frequency magnetron sputtering chamber, and forming a layer of ITO film on the surface of the yttrium-doped zirconia substrate; and S4, annealing treatment and gradient cooling treatment are carried out. The epitaxial growth of the ITO coating film is optimized through the prepared yttrium-doped zirconia substrate, and the magnetron sputtering, annealing and gradient cooling processes are combined, so that the microstructure of the film is optimized, the carrier mobility and the uniformity and stability of the film are improved, the grain boundary defect and carrier scattering loss in the ITO coating film are reduced, and the performance of the film is improved. The low sheet resistance and high light transmittance of the ITO coating film are synergistically improved, and the obtained ITO coating film has important application value in the fields of high-performance optoelectronic devices, transparent conductive films and the like.

The invention belongs to the technical field of flexible transparent film electrodes, and particularly relates to a flexible indium tin oxide film electrode, a preparation method and a flexible solar cell. According to the flexible indium tin oxide thin film electrode provided by the invention, after the processes of pre-treating substrates such as PET, covering an acrylic resin hard coating, depositing a SiO2 transition layer and the like, the adhesive force of the indium tin oxide conductive thin film is improved through the indium tin oxide conductive thin film deposited through alternate radio frequency magnetron sputtering and direct current pulse magnetron sputtering; the bottom layer deposited by radio frequency magnetron sputtering is used for providing an interface seed layer for the fluorine-doped indium tin oxide conductive thin film layer deposited by direct current pulse magnetron sputtering and having high carrier concentration and low resistance, and the top layer is used for providing protection, so that the conductivity, environmental stability and other properties of the flexible indium tin oxide thin film electrode are improved; the conductive performance is not easy to attenuate, the long-term use stability is good, and the technical problem that in the prior art, a flexible transparent film electrode is low in performance is solved.

The invention belongs to the technical field of hydrogen resistance of hydrogen conveying pipelines, and particularly relates to a preparation method of a SiO2 and Al2O3 composite hydrogen resistance coating for a hydrogen conveying pipeline based on radio frequency magnetron sputtering. According to the preparation method, the SiO2 and alpha-Al2O3 composite hydrogen-resistant coating is prepared on the surface of a hydrogen conveying pipeline base material through a radio frequency magnetron sputtering method. The preparation method of the composite coating provided by the invention is simple and easy to implement and low in preparation cost, and the prepared composite hydrogen-resistant coating is uniform in particle, compact in structure, excellent in hydrogen-resistant performance and tight in interface bonding, and can be prepared by modifying various materials and utilizing radio frequency magnetron sputtering.

The invention discloses a SiO2 / alpha-Al2O3 composite hydrogen-resistant coating for a hydrogen conveying pipeline and a preparation method of the SiO2 / alpha-Al2O3 composite hydrogen-resistant coating, and belongs to the technical field of hydrogen resistance of hydrogen conveying pipelines. The composite hydrogen-resistant coating disclosed by the invention is of a sandwich composite structure of a base material, namely SiO2-alpha-Al2O3; a radio frequency magnetron sputtering method is adopted, the composite coating with the related thickness is flexibly prepared by controlling parameters, the preparation method is simple and easy to implement, the preparation cost is low, and according to related experimental results, it is proved that the obtained SiO2 / alpha-Al2O3 composite hydrogen resistance coating for the hydrogen conveying pipeline is compact in structure, bonding between a base material and SiO2 and between SiO2 and alpha-Al2O3 interfaces is tight, and the film-substrate bonding force is 8.5 N; the hydrogen permeation activation energy is 146.2-177.9 kJ. / mol, the hydrogen permeation pressure index is 0.73-0.91, the problems of hydrogen permeation and hydrogen embrittlement of the hydrogen conveying pipeline can be greatly solved, and the service safety of the hydrogen conveying pipeline is guaranteed.

The invention relates to a high-quality indium gallium zinc oxide thin film transistor and a preparation method thereof. The preparation method comprises the following steps: S1, growing a dielectric layer on a substrate by adopting a radio frequency magnetron sputtering method; s2, in radio frequency magnetron sputtering equipment, the substrate with the dielectric layer growing on the surface is heated to 200-250 DEG C, and a semiconductor layer indium gallium zinc oxide thin film grows on the dielectric layer through magnetron sputtering; s3, carrying out post-annealing treatment on the indium gallium zinc oxide thin film at the temperature of 300 to 350 DEG C for 40 to 80 minutes; and S4, growing a titanium adsorption layer on the upper surface of the high-quality indium gallium zinc oxide thin film, and preparing a source electrode and a drain electrode on the surface of the titanium adsorption layer to obtain the high-quality indium gallium zinc oxide thin film transistor. According to the preparation method of the high-quality indium gallium zinc oxide thin film transistor, the quality of the indium gallium zinc oxide thin film can be greatly improved, and the device stability and the manufacturing yield are improved.

The invention provides a corrosion-resistant and low-friction CoCrNiTiC medium-entropy alloy carbide film and a preparation method thereof. The alloy comprises Co, Cr, Ni, Ti and C. The formula of the alloy comprises Co, Cr, Ni, Ti and C. A CoCrNiTiC entropy alloy carbide film is prepared on a substrate and a monocrystalline silicon wafer (100) by adopting planar radio frequency magnetron sputtering, a CoCrNi alloy target, a Ti target and a graphite target are selected as target materials, the gas introduced in the sputtering process is Ar gas with the purity of 99.99%, the working pressure is 1.0 Pa, and the deposition time is 2 hours. According to the method, the CoCrNiTiC high-entropy alloy carbide film is prepared through planar target magnetron sputtering, the thickness of the medium-entropy alloy carbide film ranges from 600 nm to 800 nm, and an SEM shows that the surface of the film is uniform and flat and has no obvious defects. Along with the increase of the carbon content, the friction coefficient of the film is gradually reduced, the corrosion resistance is enhanced, and the toughness is improved.

The invention belongs to the field of quantum sensors, and discloses a diamond spin quantum sensor and a preparation method thereof. The preparation method comprises the following steps: cleaning and polishing a monocrystal diamond substrate; a microwave plasma chemical vapor deposition method is adopted for preparing a diamond film with the nitrogen-vacancy color center density larger than 10 < 16 > cm <-3 > on the single crystal diamond substrate; and preparing an anti-ferromagnetic NiO film on the diamond film by adopting a radio frequency magnetron sputtering method to obtain the diamond spin quantum sensor. The diamond spin quantum sensor disclosed by the invention contains a high-concentration nitrogen-vacancy color center diamond film, and nitrogen-vacancy color center measurement has extremely high spatial resolution, so that the change of a nano-scale magnetic field can be detected; the diamond spin quantum sensor is applied to precise measurement of the magnetic moment of an antiferromagnetic film and the magnetic coupling effect of an antiferromagnetic / ferromagnetic heterojunction interface. And the preparation method is simple, economical and applicable, and provides possibility for application of the diamond nitrogen-vacancy color center material in the field of quantum magnetic sensors.

The invention relates to the technical field of silicon carbide ceramic material processing, in particular to a preparation method of a silicon carbide ceramic-based composite material based on parameter optimization. Adding carbon fibers into a sodium hydroxide solution, and carrying out ultrasonic oscillation to obtain alkali-treated carbon fibers; the preparation method comprises the following steps: adding alkali-treated carbon fibers into a silver-ammonia solution, adding a glucose solution, heating in a water bath, washing to be neutral to obtain pretreated carbon fibers, forming a titanium carbide layer by adopting a radio frequency magnetron sputtering method, forming a silicon carbide layer by adopting the radio frequency magnetron sputtering method again, weaving to obtain carbon fiber cloth, and depositing silicon carbide to obtain a silicon carbide preform; and placing the silicon carbide preform in a vacuum reaction sintering furnace to prepare the silicon carbide ceramic-based composite material. The temperature of the sintering furnace can be optimally controlled, and the mechanical property of the silicon carbide ceramic-based composite material is improved.

The invention provides a preparation method of a metal SIN layer-semiconductor structure low-loss source-drain GaN power device, and belongs to the technical field of electronic elements, and the method comprises the steps: growing a high-purity GaN layer on a gallium nitride substrate through molecular beam epitaxy to control the point location density; depositing an SIN dielectric layer through radio frequency magnetron sputtering; depositing a metal gate electrode by electron beam evaporation and ensuring accurate alignment; defining source and drain regions through photoetching and plasma etching; forming a high-concentration doped region by adopting ion implantation; performing thermal annealing treatment according to the calculation result of the thermodynamic parameter equation set; determining the optimal annealing parameter of the ohmic contact by using a traveling salesman problem optimization algorithm; depositing a Ti / Al / Ni / Au multilayer metal source drain electrode; and carrying out a device packaging test, and analyzing and optimizing process parameters based on the loss matrix. According to the method, through accurate process control and multi-physical field coupling optimization, the problem of high loss of the source and drain regions of the GaN power device is effectively solved.

The invention belongs to the technical field of materials, and particularly relates to a hydrogen-treated titanium nitride electron selective contact material applied to a crystalline silicon solar cell and a preparation method of the hydrogen-treated titanium nitride electron selective contact material. The method comprises the steps that a TiN film is prepared by introducing mixed working gas with the ratio of Ar gas to H2 gas being 95: 5 through radio frequency magnetron sputtering, and annealing is conducted at the temperature of 250 DEG C in the atmosphere with the ratio of Ar gas to H2 gas being 95: 5. The material is prepared on the back surface of a crystalline silicon solar cell as an electron selection contact layer, so that the electron extraction efficiency is improved, the interface recombination of current carriers is reduced, and the photoelectric conversion efficiency of the solar cell is improved. The preparation process is rapid, simple and convenient, the material cost is low, and the obtained material can be applied to the fields of crystalline silicon solar cells or perovskite / crystalline silicon laminated solar cells and the like.

The invention discloses a preparation method of a superconducting nanowire single-photon detector capable of keeping high detection efficiency in a liquid helium temperature region. The preparation method comprises the following steps: adopting a double-layer substrate formed by silicon oxide and silicon; the method comprises the following steps: growing a niobium nitride film on a silicon oxide surface of a substrate through radio frequency magnetron sputtering to serve as a buffer layer, growing a niobium nitride film through direct current magnetron sputtering, and accurately measuring and controlling the thickness through XRR; the method comprises the following steps: preparing a double-line parallel nanowire structure in a manner of exposing PMMA A4 electron beam glue by electron beams, and transferring a nanowire pattern to a niobium nitride film in a reactive ion etching manner; the method comprises the following steps of: removing photoresist above a region needing to be etched on a silicon oxide surface of a substrate in a manner of exposing the AZ4620 photoresist through ultraviolet laser direct writing, and then etching silicon oxide and silicon from the silicon oxide surface of a device through reactive ion etching to prepare a suspension bridge structure. The high detection efficiency of the device is ensured while the working temperature of the device is greatly improved.

The invention belongs to the technical field of electrochemical energy storage, and relates to a magnetron sputtering preparation method and application of a solid electrolyte hydrophobic interface layer. 2, depositing a hydrophobic coating, namely depositing the hydrophobic coating on one side surface or two side surfaces of the electrolyte matrix by adopting radio frequency magnetron sputtering to form a hydrophobic interface layer; the coating material of the hydrophobic coating comprises an organic polymer or an inorganic nano material, the organic polymer comprises PTFE (polytetrafluoroethylene), PDMS (polydimethylsiloxane) and FAS-17, and the inorganic nano material comprises Si3N4 and NiCrN; the compact and uniform hydrophobic coating is deposited on the surface of the garnet-type, sulfide-based or halide-based solid electrolyte membrane, so that the environmental stability and the interface electrochemical performance of the solid electrolyte material are remarkably improved, and the problems that the current solid electrolyte is easy to absorb moisture in air, unstable in structure, poor in interface contact and the like are effectively solved.

The invention provides a hydrophobic layer and a preparation method thereof, a hydrophobic composite layer and a product. The preparation method of the hydrophobic layer comprises the following steps: in the presence of a nitrogen source, performing co-deposition on the surface of a binding layer by adopting direct-current magnetron sputtering and radio-frequency magnetron sputtering to form the hydrophobic layer, the target material of the direct current magnetron sputtering comprises one or more of Zr, Ti, Cr, Ta and compounds thereof; a target material of the radio frequency magnetron sputtering comprises Si. The surface of the prepared coating has excellent hydrophobic performance, an easy-to-clean function, friction resistance and scraping resistance, the service life of the hydrophobic layer can be further prolonged, the coating can be widely applied to kitchen and bath products, and the excellent quality and attractiveness of the products are guaranteed.

The invention discloses a layer-by-layer annealing hafnium oxide / silicon dioxide antireflection film for high repetition frequency femtosecond laser. The invention discloses a preparation method of the layer-by-layer annealing hafnium oxide / silicon dioxide antireflection film for high repetition frequency femtosecond laser. The preparation method comprises the following steps: 1, depositing a hafnium oxide film on a cleaned fused quartz substrate by using a radio frequency magnetron sputtering coating system, and putting the film into a muffle furnace for high-temperature annealing; and 2, depositing a silicon dioxide film on the annealed hafnium oxide film to obtain a hafnium oxide / silicon dioxide double-layer antireflection film, and then putting the film into a muffle furnace for secondary high-temperature annealing. The optical performance of the hafnium dioxide / silicon dioxide antireflection film is remarkably improved through the layer-by-layer annealing treatment process, good transmissivity and a high damage threshold value under high repetition frequency femtosecond laser irradiation are shown in an ultraviolet visible light region, and the hafnium dioxide / silicon dioxide antireflection film can be applied to the field of high repetition frequency femtosecond lasers.

The invention discloses a patterned substrate and a preparation method and application thereof, and belongs to the technical field of micro-nano processing. The preparation method of the patterned substrate comprises the following steps: cleaning and drying a substrate to remove organic pollutants on the surface to obtain a pretreated substrate; coating photoresist on the pretreated substrate, and carrying out photoetching treatment to obtain a substrate after photoetching; developing the photoetched substrate, and removing the residual developing solution to obtain a developed substrate; with silicon dioxide as a target material and inert gas as sputtering gas, depositing silicon dioxide on the developed substrate through a radio frequency magnetron sputtering method under the sputtering power of 100-300 W to obtain a substrate containing silicon dioxide; and removing the residual photoresist from the silicon dioxide-containing substrate to obtain a patterned substrate. The preparation method is simple, convenient, safe and environment-friendly in preparation process, and when the prepared patterned substrate is used for preparing Ga2O3, the crystallization quality of a Ga2O3 film can be effectively improved.

The invention discloses a method for improving the photoelectric property of a transparent conductive oxide film and application, and belongs to the field of optoelectronic devices. The method comprises the following steps: growing a transparent conductive oxide film (TCO), a glass substrate or a silicon substrate by using a magnetron sputtering technology (or a reaction plasma deposition technology); and growing a gradient refractive index SiNyOx / SiOx thin film on the TCO thin film by using a radio frequency magnetron sputtering technology so as to construct the composite thin film (TCO / SiNyOx / SiOx) and improve the optical transmittance and the electrical stability of the TCO thin film. According to the invention, the optical and electrical properties of the transparent conductive oxide film can be improved, the transmission of the film is enhanced, the reflection is reduced, and the transparent conductive oxide film can be applied to crystalline silicon heterojunction solar cells or other optoelectronic devices and the like.

The invention relates to a three-layer amorphous metal oxide thin film transistor and a preparation method thereof, and belongs to the field of thin film transistors. The method comprises the following steps: cleaning a substrate, photoetching the substrate, preparing an In2O3 thin film on the substrate at room temperature by adopting radio frequency magnetron sputtering, depositing an IGZO thin film on the In2O3 thin film at room temperature, preparing a Ga2O3 thin film on the IGZO thin film to serve as a channel layer of the thin film transistor, annealing in an air atmosphere, and preparing a source-drain Al electrode on the channel layer. The method has the advantages that the preparation conditions of the thin film transistor are optimized, the mobility of the TFT is improved by increasing the content of indium on the lower surface of a semiconductor material, the stability of the TFT is improved by increasing the content of gallium on the upper surface of the semiconductor material, the AOS TFT of a multi-active-layer structure is designed and prepared, the contradiction between the mobility and the stability of the TFT is solved, and the electrical performance of a device is improved.

The invention provides a high-entropy alloy coating resistant to high-temperature lead and bismuth corrosion under the oxygen-deficient condition and a preparation method of the high-entropy alloy coating, and belongs to the technical field of coatings. The high-entropy alloy coating comprises the following elements in percentage by weight: 15 to 30 percent of Al, 15 to 30 percent of Fe, 15 to 30 percent of Cr and 15 to 30 percent of Mo. The preparation method of the high-entropy alloy coating comprises the following steps: pre-treating a large-curvature pipe; an AlFeCrMo high-entropy alloy target material is obtained through a powder metallurgy method; and the high-entropy alloy coating is prepared on the surface of the pretreated large-curvature pipe through the single-target radio frequency magnetron sputtering technology. According to the preparation method of the high-entropy alloy coating resistant to high-temperature lead and bismuth corrosion under the oxygen-deficient condition, provided by the invention, the prepared high-entropy alloy coating has relatively high corrosion resistance.

A system for the fabrication of ε-phase MnAl / Co bilayer thin films, consisting of: a) a high-frequency magnetron sputtering system for the deposition of multilayer thin films on a silicon substrate, the sputtering system comprising: • a system for maintaining base pressure, configured to maintain a constant pressure; • three 2-inch targets consisting of MnAl, Co and Ta; and • a substrate rotation mechanism configured to rotate the substrate at a constant number of revolutions per minute; b) a layer deposition unit that is operationally connected to the RF magnetron sputtering system and enables the sputtering system to deposit layers sequentially: • a 3 nm thick Ta buffer layer on the silicon substrate; • a 60 nm thick MnAl layer on the Ta buffer layer; • a Co layer with a thickness of 1 nm to 5 nm on the MnAl layer; and • a 5 nm thick Ta top layer on the Co layer; c) an annealing furnace configured to anneal the deposited Ta and MnAl layers for 2 hours at 600 °C before the Co layer is deposited; and d) a characterization unit for analyzing the produced thin films, wherein the characterization unit comprises the following: • an X-ray diffraction (XRD) system for structural characterization; • an optical 3D profilometer for measuring surface structure and mean roughness; and • a field emission scanning electron microscope (FESEM) with energy-dispersive X-ray spectrometer (EDS) for analyzing surface morphology and elemental composition.

The application belongs to the field of optical film and surface engineering, and provides a hydrophilic magnesium fluoride film preparation method based on magnetron sputtering, which realizes effective regulation and control of the hydrophilic performance of the magnesium fluoride film surface through sputtering power and maintains good optical transmittance. In the application, first, the substrate is subjected to ultrasonic cleaning treatment, then the substrate is placed in a vacuum chamber of a magnetron sputtering device, magnesium fluoride is used as target material, and the vacuum chamber is vacuumized to a base vacuum degree; then, inert gas is introduced into the vacuum chamber, the sputtering power is adjusted to 20-50 W, and the magnesium fluoride film is deposited on the substrate surface in a radio frequency magnetron sputtering mode; the application realizes continuous regulation and control of the hydrophilic performance of the magnesium fluoride film surface by regulating and controlling the sputtering power; with the increase of the sputtering power, the surface roughness of the film increases, the water contact angle significantly decreases, and the hydrophilicity is enhanced; and the method does not introduce additional materials, has simple process and good repeatability, and the prepared magnesium fluoride film maintains high transmittance in the visible light range.

A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.

The invention provides a preparation method of a tin-doped scaly nano gallium oxide thin film solar blind ultraviolet photoelectric detector. The preparation method comprises the following steps: carrying out cleaning pretreatment on a single crystal GaN substrate; depositing an Au thin film on the pretreated single crystal GaN substrate to serve as a catalyst layer; the preparation method comprises the following steps: mixing Ga2O3, diamond and SnO2 powder according to a certain mass ratio to prepare a precursor; putting the single crystal GaN substrate deposited with the Au thin film and a precursor into a CVD furnace, and growing according to preset gas flow, pressure intensity, reaction temperature and reaction time to obtain a tin-doped scaly nano gallium oxide thin film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide thin film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method. The conductivity of the thin film is improved through tin doping, the specific surface area and light absorption are increased through the scaly nanostructure, high-performance deep ultraviolet photoelectric detection is achieved, and the technical problem that in the prior art, the dark current of a device is high is solved.

The present invention belongs to the field of surface engineering technology, and specifically relates to an oxide-based gradient multi-phase nanocomposite coating and a preparation method thereof. The composite coating includes a Cr-Al-Si layer, a Cr-Al-Si-N layer, and an xAl2O3-yCr2O3-zSiO2-kY2O3-iEr2O3 layer arranged in sequence. The xAl2O3-yCr2O3-zSiO2-kY2O3-iEr2O3 layer is a nano multi-phase composite layer composed of Al2O3, Cr2O3, SiO2, Y2O3, and Er2O3 phases, and the molar ratio between each phase is x:y:z:k:i, where 0 < x, y, z, k, i < 0.4, and x + y + z + k + i = 1. This coating is obtained by using pulsed multi-arc ion plating and radio frequency magnetron sputtering for the corresponding coatings respectively in a vacuum environment. The coating of the present invention has the characteristics of high bonding strength, high hardness, high hydrogen resistance factor, high solar absorptance, and low solar emittance, with excellent performance, and can greatly improve the problem of performance deterioration of the base material caused by hydrogen permeation.

The invention discloses a method for controllable growth of a gallium oxide film based on an Mxene substrate. The method comprises the following steps: selecting Mxene as a substrate; and heating the substrate to a certain temperature, carrying out sputtering deposition in an inert atmosphere under a certain growth pressure, and epitaxially growing a gallium oxide film on the surface of the Mxene substrate. According to the invention, the gallium oxide thin film is grown on the surface of the Mxene substrate through heteroepitaxy by adopting a radio frequency magnetron sputtering method for the first time, and a structure with a single-family crystal face is obtained; according to the method, gallium oxide is grown on heteroepitaxy by using a radio frequency magnetron sputtering technology, the preparation process is relatively simple, the film growth quality is relatively good, and the method has a large-scale application prospect; the gallium oxide prepared by the method does not have the defects of twin crystal, cracking, spiral growth and the like, large-size preparation can be realized, and the Mxene substrate can be repeatedly used and is easy to strip. The diffusion of ions is greatly facilitated, and the crystal quality of the semiconductor single crystal film is improved.

The present invention belongs to the technical field of capacitor materials, and particularly relates to dielectric thin film materials for low- and medium-field applications, capacitors and their preparation methods. The present invention combines SrTiO3 with Bi(Mg 2 / 3 Ta 1 / 3 )O3 by using a solid-phase sintering method to prepare a ceramic target, and then deposits the ceramic target by radio frequency magnetron sputtering at different oxygen pressures to obtain dielectric thin film materials for low- and medium-field applications. By introducing Bi(Mg 2 / 3 Ta 1 / 3 )O3 into the polarization regulation of the SrTiO3 paraelectric system material, and then carrying out phase deposition growth at different oxygen pressures respectively, the lower the deposition oxygen pressure, the more defects there are inside the dielectric thin film materials for low- and medium-field applications, so as to improve the resistivity of the dielectric thin film materials for low- and medium-field applications by forming defect dipoles, increase its breakdown field strength, improve its leakage characteristics, and at the same time enhance its saturation polarization intensity.

The present invention discloses an ε-Ga2O3-based PIN structure heterojunction solar-blind ultraviolet detector and a preparation method thereof. The detector is made of new materials, and this solution is proposed to address the problems of high power consumption in the prior art. It includes a top electrode, a NiO film, an ε-Ga2O3 intrinsic layer, a 4H-SiC substrate and a bottom electrode stacked in sequence. The preparation steps include: pretreatment of the 4H-SiC substrate; metal organic chemical vapor deposition of the ε-Ga2O3 intrinsic layer; radio frequency magnetron sputtering of the NiO film; and electron beam evaporation to prepare the top electrode and the bottom electrode. The advantage is that the amount of Ga2O3 used is reduced, which can reduce power consumption. ε-Ga2O3 is grown on the 4H-SiC substrate. Based on the excellent thermal conductivity of SiC of 4.9W / cm·K, a large amount of heat in the ε-Ga2O3 intrinsic layer can be transferred from the 4H-SiC substrate. At the same time, the in-plane lattice constant difference between the orthorhombic structure ε-Ga2O3 crystal and 4H-SiC is small, which can improve the crystallization quality of the ε-Ga2O3 intrinsic layer, thereby improving the detection performance of the photodetector.

The application relates to an in-situ measurement method of the shear modulus and ductility of metal under an extreme high-pressure condition, which comprises the following steps: S1, sample preparation: preparing a metal film through a radio frequency magnetron sputtering method; S2, sample characterization; S3, sample loading: placing the metal film sample to be measured closely on one side of a diamond table, and placing the sample at the center position of the table and a sample cavity as much as possible; S4, pressure calibration; S5, measurement of compression wave velocity: in pump detection, one path with relatively strong energy is used as pump light, and one path with relatively small energy is used as detection light; the time delay between the two light pulses is used to track and measure the travel time Delta t of the compression wave in the metal film; and S6, derivation of the shear modulus and ductility. The application adopts a symmetric diamond press to obtain a stable test environment under extreme pressure, and provides a complete experimental technical scheme, which is reliable and efficient, and is easy to build and test in an ordinary laboratory.

The invention discloses a rare earth doped perpendicular magnetic anisotropy oxide thin film and a preparation method thereof, and relates to the field of hard magnetic rare earth element doped oxide thin film materials, the rare earth doped perpendicular magnetic anisotropy oxide thin film has (001) plane crystal orientation and comprises a substrate and a thin film layer, the substrate is MgAl2O4 (001), and the thin film layer is LaxNi1-xCo2O4 (001). According to the rare earth doped perpendicular magnetic anisotropy oxide thin film and the preparation method thereof, lattice strain caused by mismatching of ion radius sizes can be overcome, lanthanum is doped into a crystal structure of spinel oxide NiCo2O4, a radio frequency magnetron sputtering preparation process is adopted, La0. 05Ni0. 95Co2O4 and La0. 1Ni0. 9Co2O4 target materials are adopted, and the rare earth doped perpendicular magnetic anisotropy oxide thin film is prepared. A series of La0. 05Ni0. 95Co2O4 and La0. 1Ni0. 9Co2O4 films with different thicknesses are prepared, the obtained films have stable vertical magnetic anisotropy, the Curie temperature is above room temperature, and the films have excellent conductivity and good performance.

The invention relates to a preparation method of a niobium diselenide lubricating film serving for current-carrying friction. The niobium diselenide lubricating film is prepared by adopting a radio frequency magnetron sputtering method. Sputtering gas is argon, a sputtering target material is niobium diselenide, the niobium diselenide thin film which is compact in structure and has good mechanical performance, electrical performance and lubricating performance is prepared by changing argon flow and substrate negative bias pressure, stable lubrication in 100 thousand cycles can be achieved in the atmospheric environment, and the friction coefficient is 0.08. Under a current-carrying friction working condition, compared with a traditional molybdenum disulfide film, the contact voltage is only 1 / 4, and the wear rate is reduced by more than half. The technology can be widely applied to antifriction and wear-resistant treatment of electric contact sliding parts in the fields of aerospace, electric power systems, semiconductor manufacturing and the like.

A method for producing a chromium nitride (CrN) thin film is provided. The method includes reactive radio frequency magnetron sputtering chromium onto a substrate in the presence of a gaseous mixture including nitrogen and argon to form the CrN thin film, where a ratio of the nitrogen gas to the argon gas is 1:2 to 1:10, and where the CrN thin film has an average thickness of 500 to 1500 nm. The CrN film as prepared by the method of the present disclosure can be used in sensors for cryogenic temperature.