Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hydrophobic and ultraviolet radiation proof transparent film and preparation thereof

A transparent film and anti-ultraviolet technology, which is applied in the direction of sputtering plating, ion implantation plating, metal material coating technology, etc., can solve the problems of difficult film and poor physical and chemical properties of the film, and achieve the effect of preventing near ultraviolet rays

Inactive Publication Date: 2005-03-16
WUHAN UNIV OF TECH
View PDF2 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] If an organic material is used as a hydrophobic film material, its hydrophobic effect is really good (such as polytetrafluoroethylene), but it is difficult to use this material to make a nano-sized film, and the physical and chemical properties of the film are poor, especially when using magnetic controlled sputtering method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hydrophobic and ultraviolet radiation proof transparent film and preparation thereof
  • Hydrophobic and ultraviolet radiation proof transparent film and preparation thereof
  • Hydrophobic and ultraviolet radiation proof transparent film and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The carrier film is used as the substrate material, the sputtering cathode material is made of high-purity titanium target, and the background vacuum is 2.0×10 -3 Pa. DC reactive magnetron sputtering is selected here, and the sputtering conditions are specifically described as follows:

[0040] 1. Sputtering current: 0.3A.

[0041] 2. Sputtering voltage: 550V.

[0042] 3. Sputtering atmosphere: Ar (argon); working pressure: 0.8Pa.

[0043] 4. Reaction atmosphere: Oxygen-nitrogen mixed system; Working pressure: 0.8Pa, wherein the volume percentage of nitrogen is 80%.

[0044] 5. Substrate temperature: not heated.

[0045] 6. Bias applied to the substrate: 50V.

[0046] 7. Sputtering time: 60min.

[0047] 8. Distance from target to substrate: 15cm.

[0048] The sample number is 1#.

Embodiment 2、3 and 4

[0050] Except for the substrate temperature, other conditions are the same as in Example 1. Wherein the substrate temperature in Example 2 is 200°C, the substrate temperature in Example 3 is 350°C, and the substrate temperature in Example 4 is 400°C. The sample numbers are 2#, 3# and 4# respectively.

Embodiment 5,6

[0052] The sputtering process is the same as in Example 1, but the substrate is a quartz substrate. In order to obtain a good crystal form sample, the sample is sent into a closed container for heat treatment for 3 hours. Nitrogen is used as a protective atmosphere, and its pressure is 1.5Mpa. The heat treatment temperature of Example 5 is 600°C, and the heat treatment temperature of Example 6 is 700°C. The sample numbers are 5# and 6# respectively.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a nitrogen doped titanium dioxide film of hydrophobicity and ultraviolet resistance, and its preparation. The character of film lies in that nitrogen exists in titanium dioxide crystal lattice in substitution and clearance mode, still a portion of Ti exist in Ti<3+> ion mode. film crystallization may be red schorl, anatase and amorphism. Titanium dioxide film prepared using direct current and radio-frequency magnetron sputtering method has good hydrophobic effect. Contact angle of film to distilled water is 97-110 DEG, ultraviolet cut-off wavelength is above 390nm, and visible light average transmittance is 70%-80%. Hydrophobicity of film is not influenced by film exposition time in air. The invention is easily operated, and the film thickness and composition can be controlled. Nitrogen doped hydrophobic film can be prepared for sample of different specification, material quality, and shape.

Description

technical field [0001] The invention relates to a hydrophobic and ultraviolet radiation-resistant film doped with a metal oxide by a non-metal element and a preparation method thereof. Background technique [0002] Semiconductor surface science and thin film preparation technology have been widely concerned by the world, and these researches and technologies have been closely related to people's daily life. In the field of material display physical chemistry, research on the hydrophobic and hydrophilic properties of materials has become increasingly mature, and many patents and products on hydrophilic and hydrophobic properties have appeared in the last century. In particular, titanium dioxide, as a special material, has received extensive attention. The research on its surface properties has focused on the research on light-induced superhydrophilicity. Now there are many researches and applications on it in the world. It is also very important to study hydrophobic material...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/08C23C14/34
Inventor 赵修建袁启华刘保顺何鑫陈甲林李春领
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products