The invention provides a preparation method of a
gate oxide layer and a gate, and the method comprises the steps: carrying out the
rapid thermal annealing treatment of a
silicon-based substrate in a
nitrogen-containing gas
atmosphere, which belongs to a non-destructive
nitrogen doping mode, and carrying out the
nitrogen pre-
doping on the surface of the
silicon-based substrate, so as to reduce the
doping amount needed by the subsequent
plasma nitrogen doping; therefore, the damage of the
plasma nitrogen doping process to the SiON
gate oxide layer is reduced, and the interface defect between the SiON
gate oxide layer and the
silicon-based substrate interface is reduced. Besides, after the nitrogen pre-doped layer is formed, the
thermal oxidation process is carried out on the silicon-based substrate to form the
silicon dioxide gate
oxide layer, so that the damage to the SiON gate
oxide layer film is reduced, and the interface defect between the SiON gate
oxide layer and the silicon-based substrate interface is further reduced; moreover, the
laser rapid annealing treatment can remove the intrinsic oxide layer on the surface of the SiON gate oxide layer, repair the damage to the
crystal lattice of the SiON gate oxide layer caused by the
plasma nitrogen doping treatment process, improve the film quality and repair the interface.