126 results about "Silicon oxycarbide" patented technology

In the preferred embodiment, a gate dielectric and an electrode are formed on a substrate. A pair of spacers is formed along opposite sidewalls of the gate electrode and the gate dielectric. Spacers are preferably formed of SiCO based material or SiCN based material. The source and drain are then formed. A contact etch stop (CES) layer is formed on the source/drain regions and the spacers. The CES layer is preferably formed of SiCO based material or SiCN based material. An Inter-Level Dielectric (ILD) is then formed on the CES layer.

A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.

A method for forming a damascene with improved electrical properties and resulting structure thereof including providing at least one dielectric insulating layer overlying a first etch stop layer; forming an anti-reflectance coating (ARC) layer prior to a photolithographic patterning process; forming at least one opening extending through a thickness portion of the at least one dielectric insulating layer and first etch stop layer according to said photolithographic patterning and an etching process; blanket depositing a barrier layer including material selected from the group consisting of silicon carbide and silicon oxycarbide to line the at least one opening; blanket depositing a refractory metal liner over the barrier layer; blanket depositing at least one metal layer to fill the at least one opening; and, removing at least the at least one metal layer overlying the at least one opening level according to a chemical mechanical polish (CMP) process.

A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.

A liquid crystal display includes: a substrate; a thin film transistor on the substrate; a pixel electrode which is connected to a terminal of the thin film transistor; a microcavity layer on the pixel electrode and including an injection hole through which material is provided to the microcavity layer; a supporting layer on the microcavity layer; and a capping layer on the supporting layer. The capping layer covers the injection hole, and the supporting layer includes silicon oxycarbide (SiOC).

A semiconductor device including an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O₂ to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Flash memory cells are provided that include a first source/drain region and a second source/drain region separated by a channel region. A first gate opposes. A first gate insulator separates the first gate from the channel. The first gate insulator includes a graded composition gate insulator. A second gate is separated from the first gate insulator by a second gate insulator. The above memory cells produce gate insulators with less charging at the interface between composite insulator layers and provide gate insulators with low surface state densities. The memory cells substantially reduce large barrier heights or energy problems by using dielectrics having suitably, adjustably lower barrier heights in contact with the polysilicon floating gate. Such adjustable barrier heights of controlled thicknesses can be formed using a silicon suboxide and a silicon oxycarbide dielectrics prepared according to the process as described herein.

Silicon-oxycarbide optical waveguides and thermooptic devices include a substrate and a first cladding layer having a first refractive index positioned over a substrate. A first core layer comprising silicon, oxygen, and carbon and having a core refractive index is formed on the first cladding layer by chemical vapor deposition using at least two precursors: one inorganic silicon precursor gas and at least one second precursor gas comprising carbon and oxygen. Alternatively, at least three precursors can be used: one inorganic silicon precursor gas, a second precursor comprising carbon, and a third precursor comprising oxygen. The core layer is lithographically patterned to define waveguide elements. A second cladding layer having a second cladding refractive index is formed to surround the optical core waveguiding element of the first core layer.

A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon into contact with a substrate in the presence of an O₂-containing gas plasma.

A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O₂ to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

In one embodiment, the present invention relates to a wet etching composition including hydrogen peroxide; an organic onium hydroxide; and an acid. In another embodiment, the invention relates to a method of wet etching metal nitride selectively to surrounding structures comprising one or more of silicon, silicon oxides, glass, PSG, BPSG, BSG, silicon oxynitride, silicon nitride and silicon oxycarbide and combinations and mixtures thereof and/or photoresist materials, including steps of providing a wet etching composition including hydrogen peroxide, an organic onium hydroxide, and an organic acid; and exposing a metal nitride to be etched with the wet etching composition for a time and at a temperature effective to etch the metal nitride selectively to the surrounding structures.

A silicon oxycarbide coating remains hydrophilic for a significantly longer period of time, on the order of several months, when both (i) the coating index of refraction is 1.70 or more and (ii) the coating thickness is 350 Å or more.

The invention discloses a silicon/silicon oxycarbide/carbon anode material and a preparation method and an application thereof. In the silicon/silicon oxycarbide/carbon anode material, ultra-small silicon-oxygen-carbon nanoparticles are evenly dispersed into a carbon substrate to be used as a buffer substrate while silicon nanoparticles are evenly inlaid into the carbon/silicon-oxygen-carbon buffer substrate. The method comprises the following steps: with a thermosetting resin monomer as a solvent system instead of a traditional solvent, dispersing silicon nano powder into the solvent evenly; obtaining a solid block of a silicon/polysiloxane/carbon precursor composite material by solidifying vinylite and a silane coupling agent containing double bonds; and carrying out high-temperature calcination after crushing, and carrying out ball-milling to obtain the silicon/silicon oxycarbide/carbon anode material. According to the method, a traditional organic solvent is not used; solvent post-treatment is avoided; the silane coupling agent is directly polymerized with resin; and carbon and silicon-oxygen-carbon are formed in situ through calcination polymer pyrolysis. With ceramic (silicon-oxygen-carbon) and carbon as the buffer substrates, the stress caused by silicon volume expansion is absorbed; and bad consequences caused by silicon volume expansion are eliminated and reduced.

Disclosed is a method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate having an element formed thereon, forming an anti-reflection layer that is impermeable to hydrogen on the insulating film, the anti-reflection layer comprising a layer formed of at least one material selected from the group consisting of silicon nitride, silicon oxynitride, chromium oxide, CrO_xF_y, CrAl_xO_y, AlSi_xO_y, ZrSi_xO_y, silicon oxycarbide, carbon, chromium nitride, titanium nitride, tantalum nitride, aluminum nitride, TiAl_xN_y, TaAl_xN_y, TiSi_xN_y, AlSi_xN_y (where x and y denote the component ratio), and silicon carbide, forming a resist pattern on the anti-reflection layer, forming a hole in the insulating film with the resist pattern used as a mask, burying a conductive material in the hole to form a plug, removing the resist pattern, and forming a ferroelectric capacitor above the anti-reflection layer.

The invention relates to a reflective solar-control low-emissivity coated glass and a preparation method thereof, belonging to the technical field of glass coating. In order to overcome the defects in the existing coated glass, the glass film combination design is improved: a carbon-doped silicon oxide layer, a stibium-doped tin oxide layer, a fluorine-doped tin oxide layer and a phosphorus-doped titanium oxide layer are sequentially coated on a common float glass substrate. By the effective combination and matching of the film layers, the coated glass has the following advantages: the integral haze of the coated glass is small and controllable; the visible light reflectivity is within the acceptable range, and can not result in light reflection pollution; and the properties (the solar thermal coefficient is smaller than or equal to 0.5, the visible light transmittance is greater than or equal to 45%, and the emissivity is smaller than or equal to 0.20) are perfectly combined.