22 results about "Silicon oxycarbide" patented technology

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate with a light incident surface and a backlight surface which are oppositely arranged; the first intrinsic amorphous silicon layer and the first doping layer are located on the light incident surface and are sequentially stacked in the direction away from the silicon substrate; wherein the first doping layer comprises a nanocrystalline silicon oxide layer; the second intrinsic amorphous silicon layer, the second doping layer and the second transparent conductive oxide layer are located on the backlight surface and sequentially stacked in the direction away from the silicon substrate; wherein the second doping layer comprises a first microcrystalline silicon oxycarbide layer, a second microcrystalline silicon oxycarbide layer and a third microcrystalline silicon oxycarbide layer which are sequentially stacked in the direction away from the silicon substrate. According to the technical scheme, the solar cell is beneficial to migration of carriers, and the current density and the photoelectric conversion efficiency of the solar cell can be improved.

A method of controlling stress variation in a layer including silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system. The method includes providing a chamber comprising a platen for supporting a substrate, placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen, introducing a gas comprising oxygen into the chamber, introducing trimethylsilane gas into the chamber, generating a plasma within the chamber, maintaining a temperature at which deposition takes place to less than 275° C., maintaining a pressure within the chamber in the range 1.5-3 Torr, and depositing the layer upon the substrate with a deposition rate >1.5 μm / minute.

A method for forming an oxidation protection system on a composite structure may comprise applying a ceramic layer slurry to the composite structure and heating the composite structure to form a ceramic layer on the composite structure. The ceramic layer slurry may comprise aluminum and silicon carbide powder in a sol. The ceramic layer may comprise alumina, silicon carbide and silicon oxycarbide.

A semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the isolation pattern, a liner including a material different from the isolation pattern; a gate structure contacting an upper surface of the active pattern and an upper surface of the liner; and a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure.

The invention relates to the technical field of optical waveguides, and particularly discloses a manufacturing method of an optical waveguide end face coupler and the optical waveguide end face coupler, in the process of manufacturing the optical waveguide end face coupler, a dielectric material, namely silicon oxynitride or silicon oxycarbide, is deposited on a siliceous substrate wafer through a CVD method in a CMOS process, in the manufacturing process, the manufacturing process can be connected with the manufacturing process of an electronic device, the high-refractive-index gradient layers of the lower gradient layer, the middle gradient layer and the upper gradient layer and the core layer are finally manufactured, and the effective refractive index is linearly changed in cooperation with a common insulating medium in the semiconductor technology, namely, the low-refractive-index gradient layers prepared from silicon dioxide, and the effective refractive index is changed in a linear mode. And based on the characteristic that the refractive indexes of the silicon oxynitride and the silicon oxycarbide are adjustable, the optical waveguide end face coupler which can adapt to a semiconductor photon-electron heterogeneous integrated scene, can be compatible to the manufacturing process of an electronic device and has a wide-range core cladding refractive index difference is finally obtained.

A memory device includes an alternating stack of insulating layers and electrically conductive layers and including stepped surfaces in a staircase region, a retro-stepped dielectric material portion overlying the stepped surfaces of the alternating stack, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening, and vertically-extending silicon oxycarbide material portions located between the retro-stepped dielectric material portion and the electrically conductive layers.

A display panel includes a base layer, a circuit layer disposed on the base layer, a light emitting element layer disposed on the circuit layer, and an encapsulation layer disposed on the light emitting element layer. The encapsulation layer includes a first inorganic layer that includes a lower layer and an upper layer disposed on the lower layer, and a second inorganic layer disposed on the first inorganic layer. The lower layer includes a barrier layer that includes a silicon oxide, and the upper layer includes a silicon oxycarbide.

A memory device includes an alternating stack of insulating layers and electrically conductive layers, such that a first electrically conductive layer of the electrically conductive layers is in contact with an underlying silicon oxycarbide liner and with an overlying silicon oxycarbide liner, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory film containing a continuous memory material layer which continuously extends through the entire alternating stack.

In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell. The carbon and the oxygen in the silicon oxycarbide layer have a fixed effect on the hydrogen, which is beneficial for reducing the loss of hydrogen.

A porous silicon oxycarbide composite material comprises a porous silicon oxycarbide having a three-dimensional skeleton structure, and a carbon-containing material supported by the three-dimensional skeleton structure, wherein the porous silicon oxycarbide composite material has a BET specific surface area of 100 m2 / g or more and an electrical conductivity of 1.0×10−6 S / cm or more.

In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

Methods and apparatus for deposition of a backside layer on a semiconductor substrate are provided. In some embodiments, such techniques may include: depositing a first layer of material on a backside of the semiconductor substrate; and depositing a second layer of material over the first layer of material to collectively form a stack of materials on the backside of the semiconductor substrate, the second layer of material comprising a lower tensile stress or a lower compressive stress than that of the first layer of material, the stack of materials comprising a greater chemically resistive property than that of the first layer of material. In some implementations, such techniques may include: depositing a sealing layer on a backside of the semiconductor substrate in a first process chamber; and depositing a silicon oxycarbide (SiOC) layer over the sealing layer to collectively form a stack of materials on the backside.

A silicon-based film is conformally deposited in a feature and controllably etched using remote plasma. The silicon-based film may be an amorphous silicon layer or a doped silicon layer comprising silicon oxide, silicon nitride, silicon carbide, silicon oxycarbide, silicon carbonitride, silicon oxynitride, or silicon oxycarbonitride. The silicon-based film may be partially etched using remote plasma according to a desired depth and geometry by modulating one or more of the following etch parameters: chamber pressure, substrate temperature, exposure time, RF power, gas composition, and relative concentrations of the gas composition. Methods of and apparatuses for depositing silicon-containing films with tunable film composition and density are also provided, where the silicon-containing film is formed by thermal atomic layer deposition or thermal chemical vapor deposition and treating the silicon-containing film with a densifying gas plasma.

The purpose of the present invention is to provide: a dry etching method whereby silicon can be selectively etched; a method for manufacturing a semiconductor device; an etching apparatus; and an etching gas composition. The present invention relates to a dry etching method for using a fluorine-containing compound gas and an organic amine gas to selectively etch silicon and the silicon within at least one substance selected from the group consisting of silicon-germanium, germanium, silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbonitride, and silicon oxycarbonitride.

This application relates to the field of lithium battery technology, specifically a composite current collector, its preparation method, and lithium batteries and electrical devices. It addresses the problem in related technologies where the polymer film and metal layer of composite current collectors easily separate, hindering their normal use. A composite current collector includes: a substrate layer comprising a first surface and a second surface disposed opposite to each other along its thickness direction, the substrate layer being made of a polymer material; a first modified layer disposed on the first surface of the substrate layer, the first modified layer being made of one or more of silicon dioxide, titanium dioxide, and aluminum dioxide nanomaterials; and a first metal layer disposed on the surface of the first modified layer away from the substrate layer. This application is used for the preparation of lithium batteries.

Systems and methods for silosilazanes, silosiloxanes, and siloxanes as additives for silicon-dominant anodes in a battery that may include a cathode, an electrolyte, and an anode active material. The active material may comprise 50% or more silicon as well as an additive including one or more of: silosilazane, polysilosilazane, silicon oxycarbides, and polyorganosiloxane. The active material may comprise a film with a thickness between 10 and 80 microns. The film may have a conductivity of 1 S / cm or more. The active material may comprise between 50% and 95% silicon. The active material may be held together by a pyrolyzed carbon film. The anode may comprise lithium, sodium, potassium, silicon, and / or mixtures and combinations thereof. The battery may comprise a lithium ion battery. The electrolyte may comprise a liquid, solid, or gel.

This invention discloses a method for controlling stress variations in a layer comprising silicon carbide formed using a capacitively coupled plasma-enhanced chemical vapor deposition system. The method comprises the following steps: - providing a chamber including a stage for supporting a substrate; - placing the substrate on the stage, on which the silicon carbide-containing layer may be formed; - introducing oxygen-containing gas into the chamber; - introducing trimethylsilane gas into the chamber; - generating plasma in the chamber; - maintaining the temperature at which deposition occurs to less than 275°C; - maintaining the pressure in the chamber in the range of 1.5-3 Torr; - depositing the layer on the substrate at a deposition rate >1.5 μm / min.

A memory device includes an alternating stack of insulating layers and electrically conductive layers and including stepped surfaces in a staircase region, a retro-stepped dielectric material portion overlying the stepped surfaces of the alternating stack, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening, and vertically-extending silicon oxycarbide material portions located between the retro-stepped dielectric material portion and the electrically conductive layers.

The present invention provides organosilicon compounds that can be used to deposit silicon and oxygen-containing thin films (for example, among silicon and oxygen-containing thin films, silicon oxide, silicon oxycarbonitride, silicon oxycarbide, and carbon-doped silicon oxide), methods for using the compounds to deposit silicon oxide-containing thin films, and thin films obtained from the compounds and methods. [Solution] A composition comprising at least one cyclic oligosiloxane compound having an organic amino functional group, wherein the cyclic oligosiloxane compound has at least three silicon atoms and three oxygen atoms, and at least one organic amino group that functions to fix the cyclic oligosiloxane compound to the surface of a substrate as part of a method for depositing a silicon and oxygen-containing thin film.

The invention relates to a method for treating at least one silicon carbide fiber (16) comprising a surface layer comprising carbon and / or silicon oxycarbide, wherein the treatment comprises removing at least the surface layer from the fiber by contacting the fiber with an ammonia phase (22) in a supercritical state.

A method of controlling stress variation in a layer comprising silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system, is disclosed. The method comprises the steps of: - providing a chamber comprising a platen for supporting a substrate; - placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen; - introducing a gas comprising oxygen into the chamber; - introducing trimethylsilane gas into the chamber; - generating a plasma within the chamber; - maintaining a temperature at which deposition takes place to less than 275°C; - maintaining a pressure within the chamber in the range 1.5-3Torr; - depositing the layer upon the substrate with a deposition rate >1.5µm / minute.