44 results about "Silicon oxycarbide" patented technology

A memory device includes an alternating stack of insulating layers and electrically conductive layers, such that a first electrically conductive layer of the electrically conductive layers is in contact with an underlying silicon oxycarbide liner and with an overlying silicon oxycarbide liner, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a vertical stack of memory elements.

This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell. The carbon and the oxygen in the silicon oxycarbide layer have a fixed effect on the hydrogen, which is beneficial for reducing the loss of hydrogen.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate with a light incident surface and a backlight surface which are oppositely arranged; the first intrinsic amorphous silicon layer and the first doping layer are located on the light incident surface and are sequentially stacked in the direction away from the silicon substrate; wherein the first doping layer comprises a nanocrystalline silicon oxide layer; the second intrinsic amorphous silicon layer, the second doping layer and the second transparent conductive oxide layer are located on the backlight surface and sequentially stacked in the direction away from the silicon substrate; wherein the second doping layer comprises a first microcrystalline silicon oxycarbide layer, a second microcrystalline silicon oxycarbide layer and a third microcrystalline silicon oxycarbide layer which are sequentially stacked in the direction away from the silicon substrate. According to the technical scheme, the solar cell is beneficial to migration of carriers, and the current density and the photoelectric conversion efficiency of the solar cell can be improved.

A method of controlling stress variation in a layer including silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system. The method includes providing a chamber comprising a platen for supporting a substrate, placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen, introducing a gas comprising oxygen into the chamber, introducing trimethylsilane gas into the chamber, generating a plasma within the chamber, maintaining a temperature at which deposition takes place to less than 275° C., maintaining a pressure within the chamber in the range 1.5-3 Torr, and depositing the layer upon the substrate with a deposition rate >1.5 μm / minute.

A method for forming an oxidation protection system on a composite structure may comprise applying a ceramic layer slurry to the composite structure and heating the composite structure to form a ceramic layer on the composite structure. The ceramic layer slurry may comprise aluminum and silicon carbide powder in a sol. The ceramic layer may comprise alumina, silicon carbide and silicon oxycarbide.

A semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the isolation pattern, a liner including a material different from the isolation pattern; a gate structure contacting an upper surface of the active pattern and an upper surface of the liner; and a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure.

A method of forming a film on a substrate includes providing the substrate to a reaction chamber and forming the film on the substrate by repeating cycles including supplying a first silicon source including acetoxy groups and supplying a hydrogen source while applying power from a power source to the reaction chamber, wherein the hydrogen source reacts with the acetoxy group of the first silicon source to form an adsorption site that is reactive with the acetoxy group, and wherein the film formed on the substrate comprises silicon oxycarbide (SiOC).

The invention relates to the technical field of optical waveguides, and particularly discloses a manufacturing method of an optical waveguide end face coupler and the optical waveguide end face coupler, in the process of manufacturing the optical waveguide end face coupler, a dielectric material, namely silicon oxynitride or silicon oxycarbide, is deposited on a siliceous substrate wafer through a CVD method in a CMOS process, in the manufacturing process, the manufacturing process can be connected with the manufacturing process of an electronic device, the high-refractive-index gradient layers of the lower gradient layer, the middle gradient layer and the upper gradient layer and the core layer are finally manufactured, and the effective refractive index is linearly changed in cooperation with a common insulating medium in the semiconductor technology, namely, the low-refractive-index gradient layers prepared from silicon dioxide, and the effective refractive index is changed in a linear mode. And based on the characteristic that the refractive indexes of the silicon oxynitride and the silicon oxycarbide are adjustable, the optical waveguide end face coupler which can adapt to a semiconductor photon-electron heterogeneous integrated scene, can be compatible to the manufacturing process of an electronic device and has a wide-range core cladding refractive index difference is finally obtained.

The present invention relates to the field of optical waveguide manufacturing technology, specifically disclosing an optical waveguide, a manufacturing method thereof, and an optical waveguide spot adapter. The optical waveguide is manufactured using silicon oxycarbide with a refractive index ranging from 1.457 to 2.7 (inclusive), exhibiting low transmission loss and a good thermo-optical coefficient. The optical waveguide is suitable for optical waveguide devices of various sizes and can be used for optoelectronic monolithic and hybrid integration. Furthermore, the optical waveguide can achieve single-mode transmission even with a large refractive index difference between the core and cladding, resulting in lower loss compared to standard single-mode fiber coupling. Furthermore, the provided optical waveguide manufacturing method utilizes a low process temperature during the manufacturing process, eliminating the need for high-temperature annealing and being compatible with IC manufacturing processes.

A window includes a base layer, and an inorganic film disposed directly on at least one selected from an upper surface and a lower surface of the base layer, where the inorganic film includes at least one selected from silicon oxy carbide, silicon oxy carbonitride, and silicon oxide.

A method of manufacturing a semiconductor memory device includes the following steps. A bit line structure is formed on a substrate, wherein the bit line structure includes a bit line conductive portion and a bit line dielectric portion. And forming a silicon carbon oxide (SiCO) layer on the bit line structure. And performing a hydrogen plasma process on the SiCO layer. And performing a hydrofluoric acid etching process on the SiCO layer. A silicon nitride layer is formed over the bit line structure and the remaining SiCO layer that is not etched by the hydrofluoric acid etching process. Therefore, the remaining SiCO layer is completely covered by the silicon nitride layer, and there is no damaged path of the remaining SiCO layer.

A memory device includes an alternating stack of insulating layers and electrically conductive layers and including stepped surfaces in a staircase region, a retro-stepped dielectric material portion overlying the stepped surfaces of the alternating stack, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening, and vertically-extending silicon oxycarbide material portions located between the retro-stepped dielectric material portion and the electrically conductive layers.

A method of fabricating a semiconductor device and a device fabricated thereby, the method including sequentially stacking an interlayer insulating layer, a porous dielectric layer, a first mask layer, and a second mask layer on a substrate; etching the second mask layer to form preliminary mask patterns; etching the preliminary mask patterns to form second mask patterns; etching the first mask layer using the second mask patterns as an etch mask to form first mask patterns; etching the porous dielectric layer using the first mask patterns as an etch mask to form grooves; and forming interconnection patterns in the grooves, respectively, wherein the porous dielectric layer includes SiOCH, and the first mask layer includes carbon-free silicon oxide (SiO2).

A display panel includes a base layer, a circuit layer disposed on the base layer, a light emitting element layer disposed on the circuit layer, and an encapsulation layer disposed on the light emitting element layer. The encapsulation layer includes a first inorganic layer that includes a lower layer and an upper layer disposed on the lower layer, and a second inorganic layer disposed on the first inorganic layer. The lower layer includes a barrier layer that includes a silicon oxide, and the upper layer includes a silicon oxycarbide.

A memory device includes an alternating stack of insulating layers and electrically conductive layers, such that a first electrically conductive layer of the electrically conductive layers is in contact with an underlying silicon oxycarbide liner and with an overlying silicon oxycarbide liner, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory film containing a continuous memory material layer which continuously extends through the entire alternating stack.

A method of manufacturing a carbon structure can comprise: infiltrating the carbon structure with a silicon oxycarbide (SiOC) precursor sol; and densifying the carbon structure by chemical vapor infiltration (CVI) to form a carbon and ceramic matrix composite material, the carbon and ceramic matrix composite material comprising between 0% and 15% by weight of a plurality of ceramic particles from the ceramic compound, densifying the carbon structure including adjusting a temperature gradient across the carbon structure.

A transparent stacked passivation film structure, and a preparation method therefor and the use thereof. The transparent stacked passivation film structure comprises a first passivation layer, a second passivation layer and a third passivation layer, which are sequentially stacked on a surface of a silicon substrate, wherein the first passivation layer is made of a hydrogenated silicon oxide film; the second passivation layer is made of one selected from a hydrogenated silicon carbonitride film, a hydrogenated silicon carbide film, a hydrogenated silicon nitride film, a hydrogenated silicon carboxynitride film, a hydrogenated silicon oxycarbide film and a hydrogenated silicon oxynitride film; and the third passivation layer is made of one or a stacked film of more selected from a hydrogenated aluminum oxide film, a hydrogenated silicon nitride film and a hydrogenated silicon oxide film. The transparent stacked passivation film structure has good surface passivation and bulk passivation effects, can substantially reduce a saturation current density on a surface of a silicon wafer and prolong the bulk lifetime of the silicon wafer, and is beneficial for improving the performance of a silicon-based semiconductor device.

A porous silicon oxycarbide composite material comprising porous silicon oxycarbide having a three-dimensional skeleton structure and a carbonaceous material retained by the three-dimensional skeleton structure, wherein the BET specific surface area is 100 m 2 / g or more, and the conductivity is 1.0×10 ‑6 S / cm or more.

In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell. The carbon and the oxygen in the silicon oxycarbide layer have a fixed effect on the hydrogen, which is beneficial for reducing the loss of hydrogen.

The present invention belongs to the technical field of back contact batteries, and specifically relates to a back contact battery with a specific anti-reflection composite layer and its preparation and application, including a silicon wafer, a first semiconductor layer and a second semiconductor layer alternately arranged on the back of the silicon wafer, a passivation layer and an anti-reflection composite layer sequentially arranged on the front of the silicon wafer, the anti-reflection composite layer includes silicon nitride and carbon-doped silicon oxide sequentially arranged on the outer surface of the passivation layer, the corrosion rate of the carbon-doped silicon oxide in a hydrofluoric acid solution with a mass concentration of 5wt% is below 1.5Å / s, the thickness of the carbon-doped silicon oxide is 60-150nm, and the thickness ratio of silicon nitride to carbon-doped silicon oxide is 1:(0.5-2). The present invention is conducive to improving the stability and production yield of the film layer while taking into account the optical effect, increasing the short-circuit current, and improving the battery efficiency.

The present invention belongs to the technical field of back-contact batteries, and particularly relates to a back-contact battery with a specific emitter, its preparation method and application. The first semiconductor layer includes a first passivation layer and a first doped silicon layer. The second semiconductor layer includes a first intrinsic silicon layer, a doped silicon dielectric layer, and a second doped amorphous silicon layer sequentially arranged on the back. The doped silicon dielectric layer and the second doped amorphous silicon layer have the same doping type, and the doping type is n-type or p-type. The doped silicon dielectric layer is silicon carbide, silicon oxide, or silicon carbon oxide of the corresponding doping type. The thickness of the doped silicon dielectric layer is 1-3 nm, and the thickness ratio of the doped silicon dielectric layer to the first intrinsic silicon layer and the second doped amorphous silicon layer is 1:(2-5):(3-7). The present invention is beneficial to promoting the rapid separation of photo-generated carriers, reducing recombination, increasing the open-circuit voltage of the battery, thereby improving the battery efficiency and its stability, and effectively reducing the battery efficiency attenuation under harsh environments such as high humidity and high temperature.

The invention relates to the technical field of optical waveguide manufacturing, and particularly discloses an optical waveguide, a manufacturing method thereof and an optical waveguide spot size adapter, for the optical waveguide, silicon oxycarbide with the refractive index range of 1.457-2.7 (including 1.457 and 2.7) is used as a material for manufacturing the optical waveguide, the optical waveguide has the characteristics of low transmission loss and good thermo-optical coefficient, and is suitable for optical waveguide devices with different sizes, and the optical waveguide spot size adapter is suitable for optical waveguide devices with different sizes. The optical waveguide can be used for photoelectric monolithic integration and hybrid integration, meanwhile, the optical waveguide can still achieve single-mode transmission under the condition that the refractive index difference of the core cladding is large, compared with standard single-mode optical fiber coupling, loss is low, and the provided optical waveguide manufacturing method is low in process temperature in the manufacturing process, does not need high-temperature annealing and is compatible with the IC manufacturing process.

The present application relates to a preparation method of carbon-silicon oxide composite carrier and the composite carrier, heterogeneous catalytic oxidation catalyst and application thereof.The preparation method of carbon-silicon oxide composite carrier is to mix a silicon source and a carbon source to form a precursor solution, and then to synthesize the carbon-silicon oxide composite carrier in situ by carbonization.The method is convenient, efficient and suitable for industrial application.The composite carrier obtained has high mechanical strength, large specific surface area, high stability, stable performance, suitable specific gravity and the like.Further, the preparation method can adjust the pore and element distribution by parameter adjustment, thereby improving the treatment effect of the catalyst on complex water quality.

Contact structures and methods of forming the same are provided. A method according to the present disclosure includes receiving a workpiece including a conductive feature embedded in a first dielectric layer, treating the workpiece with a nitrogen-containing plasma, after the treating, depositing a first etch stop layer (ESL) over the workpiece, depositing a second ESL over the first ESL, depositing a second dielectric layer over the second ESL, forming an opening through the second dielectric layer, the second ESL and the first ESL to expose the conductive feature, and forming a contact via in the opening. The first ESL includes aluminum nitride or silicon carbonitride and the second ESL includes aluminum oxide or silicon oxycarbide.

A porous silicon oxycarbide composite material comprises a porous silicon oxycarbide having a three-dimensional skeleton structure, and a carbon-containing material supported by the three-dimensional skeleton structure, wherein the porous silicon oxycarbide composite material has a BET specific surface area of 100 m2 / g or more and an electrical conductivity of 1.0×10−6 S / cm or more.

In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

Methods for forming a patterned multilayer stack including a metal-containing layer are provided herein. Methods involve using a silicon-containing non-metallic material in a multi-layer stack including a sacrificial layer to be later removed and replaced with a metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing the metal. Methods involve replacing silicon nitride with silicon oxycarbide and replacing a metal-containing layer with a sacrificial non-metallic material to fabricate a multi-layer stack, patterning the multi-layer stack, selectively removing the sacrificial non-metallic material to leave a space in the stack, and depositing a metal-containing material into the space. The sacrificial non-metallic material includes silicon nitride and doped polysilicon, such as boron doped silicon.

Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.

Methods and apparatus for deposition of a backside layer on a semiconductor substrate are provided. In some embodiments, such techniques may include: depositing a first layer of material on a backside of the semiconductor substrate; and depositing a second layer of material over the first layer of material to collectively form a stack of materials on the backside of the semiconductor substrate, the second layer of material comprising a lower tensile stress or a lower compressive stress than that of the first layer of material, the stack of materials comprising a greater chemically resistive property than that of the first layer of material. In some implementations, such techniques may include: depositing a sealing layer on a backside of the semiconductor substrate in a first process chamber; and depositing a silicon oxycarbide (SiOC) layer over the sealing layer to collectively form a stack of materials on the backside.