63results about How to "Lower the K value" patented technology

The invention discloses a low-noise avalanche photodetector and a preparation method thereof. The low-noise avalanche photodetector comprises an N-type ohmic contact layer/P-type ohmic contact layer, a multiplication layer, a charge layer and a P-type ohmic contact layer/N-type ohmic contact layer with different doping types which are formed through diffusion and ion injection, and a substrate is formed at the bottom between the charge layer and the P-type ohmic contact layer/N-type ohmic contact layer; an inverted trapezoidal groove is formed among the charge layer, the P-type ohmic contact layer/N-type ohmic contact layer and the substrate; and an absorbed layer is formed in the inverted trapezoidal groove. A P-type electrode and an N-type electrode are arranged on the P-type ohmic contact layer and the N-type ohmic contact layer respectively. The low-noise avalanche photodetector has the characteristic that a one-dimensional longitudinal avalanche photodetector is of a two-dimensional transverse structure, and the effective thickness of the multiplication layer is reduced to a nanometer size, so that the k value is reduced by using the dead-time effect of a nanometer multiplication area.

Disclosed is a method of forming an opening. The method comprises the steps of providing a semiconductor substrate; forming a metal conductive layer on the semiconductor substrate; forming a dielectric layer on the metal conductive layer and forming an opening in the dielectric layer with the opening exposing a surface of the metal conductive layer, the surface of the metal conductive layer having a reaction residue and a side wall of the opening having a defect; removing the reaction residue on the metal conductive layer at the bottom of the opening by use of a first gas; repairing the defect on the side wall of the opening by use of a second gas; and removing, after treatment of the first gas and the second gas, a polymer on the surface of the metal conductive layer by use of a third gas. The method of forming the opening is used for improving electrical properties, stability and yield of an integrated circuit.

The invention relates to the field of medicinal dressings and in particular relates to a multifunctional liquid dressing and a preparation method thereof. The multifunctional liquid dressing comprises the following components in parts by mass: 2-8 parts of polyvinyl butyral, 0.5-0.8 part of sodium alginate-polyvinylpyrrolidone, 0.2-0.6 part of nano-silver-chitosan, 0.1-0.4 part of sodium carboxymethylcellulose, 0.1-0.4 part of carrageenan, 0.1-0.4 part of menthol and 91-97 parts of absolute ethyl alcohol. The multifunctional liquid dressing disclosed by the invention is waterproof, breathable and visible in wound, can prevent infection and contributes to wound healing.

The invention relates to a melting furnace for producing float glass and a colorant addition method, belonging to the technical field of glass production. According to the invention, a neck (3) is used as a charging and mixing part; and coloring materials are added into molten glass via a charging channel (8) arranged at the charging area (6) of the neck. Since the melting furnace is filled with colorless basic molten glass, the operation of coloring is performed at the neck, thereby reducing displacement amount of the molten glass and effectively shortening changing time of the molten glass; and the method enables large-size melting furnaces to adapt to features of color glass demand market, and the features of the color glass demand market include demands for various varieties and little demand for a single variety.

The invention discloses a magnetizing inductance variable LLC resonant transformer. The magnetizing inductance variable LLC resonant transformer comprises a primary winding 1, a main secondary winding2, an auxiliary secondary winding 3, a power magnetic core 4, a switch 5, and two alternating current inductors 6 and 7 with air gaps. The two terminals of the alternating current inductor 6 with airgap are respectively connected with the two terminals of the auxiliary secondary winding 3. One terminal of the alternating current inductor 7 with air gap is connected in parallel with the alternating current inductor 6 with air gap through the switch 5. Compared with a traditional LLC transformer, the gain adjustment range of the LLC resonant converter can be wide during heavy load, and the primary loop current is small during light load, so that the output characteristic and light load efficiency of the LLC resonant converter are effectively improved.

The invention provides an internal connection structure of a semiconductor device and a manufacturing method of the internal connection structure. The manufacturing method includes the steps of forming a first medium layer on the substrate structure and covering a first layer interconnecting wire in the process of forming the inner connecting layer, wherein the first medium layer is attached to the side wall of the first layer interconnecting wire and grows in the direction away from the side wall of the first layer interconnecting wire to partially fill the interval region in a non-filling mode, so that a first air gap is formed in the first medium layer in the interval region, and the first air gap is sealed in the first medium layer; opening the first air gap to form a plurality of opengrooves between the first layer interconnecting wires, and expanding the space size of the grooves; forming a second medium layer on the first medium layer, covering the upper notch of the grooves bythe second medium layer to seal the open slot to form a second air gap, wherein the space enclosed by the second air gap is larger than the space enclosed by the first air gap, so that an air gap with a larger size can be formed between every two adjacent interconnecting wires to realize effective and reliable isolation between the interconnecting wires.

The invention discloses a campus bulwark behavior early warning system and method based on an artificial intelligence technology. The system comprises a processor, a student terminal and a teacher terminal. The processor is used for executing calculation and artificial intelligence analysis; the student terminal is used for students to carry out bulking alarm, the teacher terminal is used for teachers to receive information sent by the processor and carry out subsequent processing according to the sent information, the processor comprises a memory, a basic database is stored in the memory, andthe basic database comprises information of all students. The system can be used for carrying out accurate bulking early warning.

The invention provides an air gap forming method in the back-end-of-line process. The method includes the steps that a semiconductor substrate with a back-end-of-line film layer structure is provided; the back-end-of-line film layer structure is sequentially provided with a low-K dielectric layer and a hard mask layer from bottom to top; a through hole structure is respectively etched in the low-K dielectric layer and the hard mask layer through a photoetching process and an etching process; the side wall of the through hole structure in the low-K dielectric layer is modified through etching so as to form class oxidation film type material; the through hole structures are deposited with seed crystal layers and filled with metal copper; the top of the filling metal copper is subjected to planarization; the hard mask layer is subjected to downward reduction; the hard mask layer located at the top of the oxidation film type material is removed, and the top of the oxidation film type material is exposed outside; the oxidation film type material is removed, and the hard mask layer on which reduction has been conducted is removed, so that in the process of removing the oxidation film type material, the low-K dielectric layer is not damaged, damage to the through hole structures is avoided, and the K value of devices prepared in the later processes is further reduced.

The invention discloses a new mold for a 70 series frame and fan and ten sealant strips for occlusion, including a widened indoor side aluminum profile and a widened outdoor side aluminum profile, the widened indoor side aluminum profile and the widened room Ten sealing rubber strips are arranged between the outer aluminum profiles, and inverted triangular protrusions for connecting the widened indoor aluminum profiles and the widened outdoor outdoor aluminum profiles are respectively provided at both ends of the ten sealed rubber profiles. The sealing strip breaks the traditional design limitations of single, double, and triple sealing strips, adding ten sealing strips greatly reduces the K value, greatly improves the effect of cold insulation, heat insulation, sound insulation and noise prevention, and at the same time achieves energy saving and emission reduction effects; widened aluminum alloy profiles Better cooling and heat insulation, sound insulation and noise prevention; the design of ten sealing strips can better meet the needs of sound insulation, anti-drying, anti-cold condensation, and anti-heat transfer; high-quality EPDM sealing strips are not easy to age, It is durable and has better sealing effect, which greatly meets the needs of anti-cold poly and anti-heat transfer.

The invention discloses a double control warm frame hollow glass window shade. The double control warm frame hollow glass window shade comprises a rectangular window body, an inner frame body, front glass and rear glass, a venetian blind, a curtain sheet overturning adjustment control mechanism, a venetian blind lifting adjustment control mechanism, a venetian blind lifting and curtain sheet overturning transition mechanism, a curtain sheet overturning external control mechanism and a venetian blind lifting external control mechanism, wherein the rectangular window body is composed of left andright longitudinal frame strips and upper and lower horizontal frame strips, the inner frame body is composed of left and right inner frame strips and upper inner frame strips, and the venetian blindis arranged in a venetian blind cavity. The double control warm frame hollow glass window shade is characterized in that left inner frame strip lightproof extension edges are arranged on the rear walls of the left inner frame strips and extends to the direction of the venetian blind cavity, right inner frame strip lightproof extension edges are arranged on the rear walls of the right inner framestrips and extends to the direction of the venetian blind cavity, gaps between the left end of the venetian blind and the right side of the left inner frame strips are covered by the left inner framestrip lightproof extension edges, and gaps between the right end of the venetian blind and the left side of the right inner frame strips are covered by the right inner frame strip lightproof extensionedges. Privacy and safety of users are ensured, lifting effect is lasting and stable, and lifting pulling ropes of the venetian blind are not prone to breaking free.

The invention provides a manufacturing method of a semiconductor device. The manufacturing method of the semiconductor device comprises providing a semiconductor substrate, forming an etching stop layer and an interlayer dielectric layer on the semiconductor substrate from bottom to up in a sequentially stacked mode, and forming copper metal interconnecting wires in the interlayer dielectric layer; forming a silicon layer on the semiconductor substrate; imaging the silicon layer, and etching the silicon layer and the interlayer dielectric layer in sequence to from a groove between the copper metal interconnecting wires; carrying out oxidation treatment on the silicon layer to narrow a top opening of the groove; carrying out ion implantation on the silicon layer which is processed by the oxidation treatment; and forming the interlayer dielectric layer on the semiconductor substrate to completely seal the top opening of the groove. According to the manufacturing method of the semiconductor device, an air gap with a larger feature size can be formed between copper metal interconnecting structures, and therefore the sizes of interconnecting capacitor is effectively reduced. Meanwhile, a k value of the interlayer dielectric layer can be further reduced through an adopted implantation technology.

The invention discloses an integration technology of copper and a low K dielectric material. The method comprises the following steps of depositing a low K or ultralow K dielectric layer on a substrate; carrying out plasma annealing processing on the deposited low K or ultralow K dielectric layer; depositing a barrier layer on the low K or ultralow K dielectric layer; depositing a copper seed layer on the barrier layer; depositing a copper layer on the copper seed layer, wherein the copper layer fills in a graph structure on the substrate and covers a whole surface layer of the substrate; using a chemical mechanical planarization technology to remove a copper layer portion on the substrate surface layer; using a stress-free polishing technology to completely remove the residual copper layer on the substrate surface layer and staying at the barrier layer; using a hot gas phase etching technology to completely remove the barrier layer on the substrate surface layer. By using the technology of the invention, the dielectric material can maintain an enough low K value and integration with copper is realized, and a technical barrier in the prior art is broken through.

The invention relates to the technical field of processing of combination of casement screen windows and casement windows, in particular to a double-cavity heat-insulating and temperature-preserving inward casement window structure. Specifically, cross sections of a primary frame structure and a secondary frame structure of an original window frame are changed from single-surface contact into double cavities, and the single-surface contact of the cross sections of contact glass of original window sashes is realized as the double cavities; the single-surface contact of a contact glass part of the original window frame is realized as a double-cavity cross section, and the double-cavity cross section is filled with a temperature preserving material, so that the heat preserving property, the load capacity and the wind pressure resistance of a primary frame body and a secondary frame body of a window frame are improved by the cavities of the window frame and a wall surface; the temperature preserving property of the glass contact surfaces of the window sashes is improved, so that the heat-insulating and temperature-preserving effects are improved, and the purpose of reducing a heat transfer coefficient K is achieved. The reasonable arrangement of a combined structure of a screen window and the window frame in a window frame body is realized.

The invention relates to the field of dental ulcer treatment medicine, in particular to a dental ulcer spray and a preparation method thereof. The dental ulcer spray is prepared from, by mass, 1-3 parts of regeneration promoter, 0.3-0.5 part of anti-inflammatory agent, 1-4 parts of film-forming agent, 0.5-2.5 parts of pore-foaming agent, 0.1-0.2 part of suspending agent, 0.1-0.2 part of antioxidant, 0.1-0.2 part of astringent and 92-98 parts of solvent. The dental ulcer spray is good in treatment effect, and meanwhile has the effects of diminishing inflammation, relieving pain and promoting ulcer healing.