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Method for repairing damaged dielectric layer

A technology for repairing dielectrics and dielectric layers, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as increasing RC delay, dielectric layer damage, and increasing k value, and achieve the effect of reducing RC delay.

Inactive Publication Date: 2013-12-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0007] The technical problem solved by the present invention is to solve the problem that the dielectric layer of low / ultra-low-k dielectric material in the prior art is easily damaged in the semiconductor manufacturing process, resulting in an increase in the k value, thereby increasing the RC delay

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  • Method for repairing damaged dielectric layer

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Embodiment Construction

[0038] As mentioned above, the dielectric layer using low / ultra-low-k dielectric materials is vulnerable to plasma and / or chemical agents during semiconductor manufacturing processes such as etching, ashing or planarization due to their porous and soft materials. This will increase the k value of the dielectric layer, thereby increasing the RC delay of the interconnection structure, and it has been found in practice that the lower the k value of the dielectric material, the easier it is to generate low-k damage. The inventors found that using He / H 2 Plasma treatment of the dielectric layer with low-k damage not only does not change the surface properties of the dielectric material, that is, does not change from hydrophobicity to hydrophilicity, but also increases the porosity of the dielectric material and reduces the k value of the dielectric material. Repair the damage of the dielectric layer, thereby reducing the RC delay.

[0039] For this reason, the present invention pr...

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Abstract

A method for repairing a damaged dielectric layer comprises the following steps: a substrate is provided; a dielectric layer which is a low-k dielectric material or ultralow-k dielectric material is formed on the substrate, and an interconnection structure is formed inside the dielectric layer, wherein the dielectric layer is damaged during the interconnection structure forming process; and plasmas including He and H2 are blown into a plasma processing room, and plasma processing is carried out on the substrate with the formed interconnection structure so as to repair the damaged dielectric layer. According to the invention, the low-k damaged dielectric layer undergoes plasma (He, H2, etc.) processing. Thus, porosity of the dielectric material can be raised, k value of the dielectric material is reduced, and the damaged dielectric layer is repaired so as to reduce RC delay.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a method for repairing damage to a dielectric layer. Background technique [0002] In a back-end-of-line (BEOL) process of a semiconductor device, after the semiconductor device layer is formed, a metal interconnection layer needs to be formed on the semiconductor device layer to form an electrical connection with the semiconductor device layer. Forming the metal interconnection layer generally includes manufacturing trenches and via holes in the dielectric layer, and then filling the trenches and via holes with metal to form an interconnection structure. [0003] With the continuous development of integrated circuit manufacturing technology, the number of devices per unit area continues to increase, the aspect ratio of the interconnection structure increases, and the parasitic capacitance between lines increases, causing problems such as RC delay (RC Delay) ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/768
Inventor 张海洋胡敏达
Owner SEMICON MFG INT (SHANGHAI) CORP
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