340 results about "Low-k dielectric" patented technology

The present disclosure describes a method for forming a nitrogen-rich protective layer within a low-k layer of a metallization layer to prevent damage to the low-k layer from subsequent processing operations. The method includes forming, on a substrate, a metallization layer having conductive structures in a low-k dielectric. The method further includes forming a capping layer on the conductive structures, where forming the capping layer includes exposing the metallization layer to a first plasma process to form a nitrogen-rich protective layer below a top surface of the low-k dielectric, releasing a precursor on the metallization layer to cover top surfaces of the conductive structures with precursor molecules, and treating the precursor molecules with a second plasma process to dissociate the precursor molecules and form the capping layer. Additionally, the method includes forming an etch stop layer to cover the capping layer and top surfaces of the low-k dielectric.

To provide a ceramic having a high coefficient of thermal expansion and a low dielectric constant.SOLUTION: 50.0 to 90.0 mass% of 2MgO and SiO2, a total of 8.0 mass% or more of one of 7.0 to 14.0 mass% of ZrO2 and 10.0 to 50.0 mass% of Al2O3 or both of 14.0 mass% or less of ZrO2 and 50.0 mass% or less of Al2O3, and 3.0 to 15.0 mass% of one or more selected from Y2O3, CaO, CeO2, and HfO2, wherein a crystalline structure of the is a cubic structure. ZrO2.SELECTED DRAWING: None

The invention relates to fluorine-free polyimide containing hydrophobic groups and a preparation method thereof, and belongs to the field of novel high-performance polyimide materials. The fluorine-free polyimide containing the hydrophobic group has a repeating unit structure shown in a general formula (I) and is obtained by polymerizing a fluorine-free diamine monomer containing the hydrophobic group and having a structure shown in a general formula (II) with specific diamine and dianhydride monomers. The fluorine-free polyimide containing the hydrophobic group has relatively low water absorption rate, has a low dielectric constant and a low loss factor at high frequency, has excellent solubility and thermal stability, can meet the performance requirements of a high-frequency and high-speed circuit on a substrate material, and has a wide application prospect. The material can be used as an excellent fluoride-free insulating base material in the fields of super-large-scale integrated circuits, photosensitive polyamideimide and the like.

The invention relates to the technical field of micro display, and discloses a display panel and a preparation method thereof.The display panel comprises pixel units arranged in an array, each pixel unit comprises a driving circuit layer arranged on one side of a substrate, and each driving circuit layer comprises multiple metal wire layers and interlayer dielectric layers arranged between the adjacent metal wire layers; the display panel comprises an isolation structure arranged between any two adjacent pixel units, and the lower end of the isolation structure extends to be flush with the bottom face of any metal wire layer or any interlayer dielectric layer in the direction perpendicular to the substrate or extends into the substrate. The isolation structure comprises a bottom insulating layer and side wall insulating layers arranged on the side walls of any two adjacent driving circuit layers. The isolation grooves are formed between the pixels and are filled with materials such as gas, low-dielectric-constant media or metal, so that capacitive coupling, leakage current and inductive coupling between the pixels are reduced, and the problems of contrast reduction, color distortion, inaccurate gray scale and the like caused by crosstalk are solved.

This application provides a temperature-stable low-dielectric silicate LTCC material and its preparation method, relating to the field of low-dielectric microwave dielectric ceramics technology. The low-dielectric silicate LTCC material has the following chemical formula: x Na2O- y CaO- z SiO2- m CaSnSiO5- n The compound of B2O3 was prepared, wherein 0.8 ≤ x ≤1.2, 1.8≤ y ≤2.2, 2.9≤ z ≤3.3, 0.6≤ m ≤1.5, 0.03≤ n The dielectric constant is ≤0.1; the chemical formula of its main crystalline phase is Na2Ca2Si3O9. The temperature-stable low-dielectric silicate LTCC material prepared using the above method overcomes the defect of poor temperature stability in the synthesis of low-dielectric microwave dielectric ceramics in existing technologies. The prepared low-dielectric silicate LTCC material has the characteristics of low dielectric constant, temperature stability, and a sintering temperature below 950℃. It has the advantages of simple synthesis process, stable main crystalline phase composition, and low raw material price, making it a suitable low-dielectric LTCC material for millimeter-wave communication.

A method for preparing a polyolefin adhesive sheet with low dielectric constant and low dielectric loss, the method comprising the following steps: soaking a porous polytetrafluoroethylene film in a sodium-naphthalene-tetrahydrofuran solution, rinsing and air-drying to obtain an activated porous polytetrafluoroethylene film; adding a silane coupling agent to ethanol to form a silane coupling agent ethanol solution, immersing the porous polytetrafluoroethylene film in the silane coupling agent ethanol solution, and drying to obtain a porous polytetrafluoroethylene film with double bonds bonded to the surface; immersing inorganic fillers in the silane coupling agent ethanol solution, and drying to obtain inorganic fillers with double bonds bonded to the surface; stirring polyolefin, inorganic fillers, a flame retardant, an antioxidant, and an initiator to form a polyolefin composite glue solution; immersing the porous polytetrafluoroethylene film with double bonds bonded to the surface in the polyolefin composite glue solution, and drying to obtain a polyolefin adhesive sheet, which has the advantages of low dielectric constant, low dielectric loss, low water absorption, and the like.

Curable adhesive compositions include a curable adhesive and a filler comprising expanded microspheres. Expanded microspheres are polymeric spheres with a central void. Curable adhesives include curable epoxy adhesives. The cured adhesive composition has a dielectric constant (Dk) of 3.0 or less, a shrinkage of less than 4.5%, and an elongation of 2-400%. The curable adhesive compositions can be used to form articles where one substrate is adhered to a second substrate with the cured adhesive composition between them.

Implementations of the present disclosure generally relate to low k dielectric films disposed over a substrate. More particularly, implementations described herein provide, organic framework low k dielectric films and methods for forming the same. In at least one implementation, a process for depositing a film is provided and includes sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, where the film has a dielectric constant (k) of 3 or less.

The invention provides a preparation method of a metal interconnection structure and the metal interconnection structure, and the method comprises the steps: forming a first dielectric layer and a plurality of through holes in the first dielectric layer on a substrate on which a semiconductor device layer and a first metal wiring layer are formed, and then employing a flowable organic material as a second dielectric layer on the first dielectric layer, and a plurality of metal grooves are formed in the second dielectric layer, and after the remaining second dielectric layer is cured, the through holes and the metal grooves are filled with second metal to form a metal interconnection structure. The preparation process of the through hole and the metal wire is divided into independent parts according to the sequence, so that the depth-to-width ratio of through hole etching is reduced during preparation of the through hole, and the etching process window is increased; in addition, a curable organic matter is adopted as a dielectric layer of the metal wire, the thickness of photoresist is reduced during preparation of the metal wire, a photoetching process window is increased, and meanwhile, due to the low dielectric constant of the organic matter, the parasitic capacitance between the metal interconnection wires is effectively reduced.

Provided is a resin material that exhibits high thermal conductivity while being low in dielectric constant and low in dielectric loss tangent, and that is also high in heat resistance. Provided is a multifunctional vinyl resin obtained by aromatic vinylization of the phenolic hydroxyl groups of a phenolic aralkyl resin having a biphenyl structure in the skeleton and having two or more phenolic hydroxyl groups, and a resin composition. The multifunctional vinyl resin has good dielectric properties and high thermal conductivity, and is suitable for use in electronic materials and composite materials.

The invention provides a connecting line isolation performance improvement method and an integrated circuit. The method comprises the following steps: preparing a circuit element on the surface of a wafer; forming a multi-layer metal interconnection structure on the surface of the circuit element to realize electrical connection of each polarity of the circuit element; each layer of metal interconnection structure comprises a metal connecting wire formed in the low-dielectric-constant material layer, an isolation film layer is formed between the low-dielectric-constant material layer and the side wall contact surface of the metal connecting wire, the dielectric constant of the isolation film layer is larger than that of the low-dielectric-constant material layer, and the isolation performance between the metal connecting wires in the later process is improved.

Described herein are a cleaning composition, a wet-etch composition including the cleaning composition and one or more oxidants, and a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.

The application discloses a kind of composite ultra-thin bonding sheet for high-frequency copper-clad plate multilayer pressing and a preparation method thereof, and specifically belongs to the field of copper-clad plate bonding sheet manufacturing.The composite ultra-thin bonding sheet is obtained by impregnating the reinforcing substrate in a composite resin adhesive and then drying.The composite resin adhesive comprises a composite resin composition and a solvent.The composite resin composition comprises a composite bisphenol A type epoxy resin, an o-cresol formaldehyde epoxy resin, a brominated epoxy resin, poly(4-vinyl butyl benzoate), a heat-resistant filler, a curing agent, and a curing accelerator.The copper-clad plate prepared using the composite ultra-thin adhesive provided by the application has excellent high-temperature resistance and tracking resistance, as well as good flame retardance, low dielectric constant, and peel strength, with excellent overall performance.

A structure for a FinFET, a FinFET and an LDMOS device are disclosed. The structures include a trench isolation adjacent a semiconductor fin and configured to increase a height of the semiconductor fin without increasing the footprint. The fin has junction and gate regions, and the trench isolation is adjacent a lower region the fin. The FinFET includes a first recess in the trench isolation adjacent the gate region of the fin, and a second recess in the trench isolation adjacent the junction region of the fin. The first recess is at least partially filled with a high dielectric constant (high-K) layer and a gate metal, and the second recess is at least partially filled with a low dielectric constant (low-K) layer. The trench isolation includes an upper portion and a lower portion that include materials of different compositions, e.g., a dopant in the upper portion.

The invention relates to the technical field of polymer composite materials, in particular to a PTFE microwave composite dielectric substrate based on core-shell structure filler and a preparation method of the PTFE microwave composite dielectric substrate. The preparation method comprises the following steps: uniformly coating nano-diamond on the surfaces of hollow silicon dioxide microspheres by adopting an electrostatic self-assembly method to form a core-shell filler, then mixing the core-shell filler with polytetrafluoroethylene emulsion, and preparing the microwave composite dielectric material through calendaring molding and vacuum hot pressing methods. The nano-diamond shell layer can construct a continuous heat conduction network, and meanwhile the low dielectric constant characteristic brought by an internal hollow silicon dioxide structure is kept. In addition, the nano-diamond endows the hollow silicon dioxide microspheres with rough surfaces, and interface bonding between the hollow silicon dioxide microspheres and a polytetrafluoroethylene matrix is enhanced, so that thermal expansion is remarkably inhibited. The invention provides an effective way for solving the contradiction between the dielectric property and the thermal property of the polytetrafluoroethylene-based microwave composite dielectric material.

[Object]To provide a copper clad laminate that is capable of achieving high adhesion between a low dielectric resin film and a copper plating layer and a good volume resistivity while suppressing a transmission loss when being applied to a flexible circuit board, and a method for producing the copper clad laminate.[Solving Means]A copper clad laminate of the present invention includes a low dielectric resin film having a relative permittivity of 3.5 or lower and a dissipation factor of 0.008 or lower at a frequency of 10 GHz, and an electroless copper plating layer laminated on at least one surface of the low dielectric resin film. A weighted average size of crystallites in the electroless copper plating layer is 25 to 300 nm, and an adhesion strength between the resin film and the electroless copper plating layer is 4.2 N / cm or more.

The utility model relates to the technical field of screw rods, and discloses a combined adjusting screw with a temperature deviation compensation effect, which comprises a screw rod body, a screw rod rotating part is arranged at the end part of the screw rod body, a rotating slot is arranged on the surface of the screw rod rotating part, a counter bore is arranged at the end part of the screw rod body, a medium material rod is inserted in the counter bore, and the medium material rod is connected with the screw rod rotating part. The counter bore is formed in the end of the screw body, the dielectric material rod is arranged in the counter bore, the dielectric constant of the dielectric material rod can be reduced along with temperature rise, the dielectric constant is reduced, the resonant frequency is high, temperature deviation of the metal cavity can be effectively reduced, and the service life of the screw is prolonged. Therefore, materials such as invar steel are not needed any more, the effect of temperature deviation compensation can be achieved, and use of a user is more convenient.

The application discloses a bipolar group acrylate polymer-based dielectric elastomer material and a preparation method thereof, and belongs to the technical field of polymer synthesis. The method comprises the following steps: uniformly mixing hydroxybutyl acrylate and dichloromethane, adding organic acid and acylation catalyst, stirring and reacting, and obtaining a hydroxybutyl acrylate-based diester monomer after purification; then adding a crosslinking agent and a photoinitiator, uniformly mixing, and obtaining the bipolar group acrylate polymer-based dielectric elastomer material after solidification and crosslinking under ultraviolet light irradiation. The bipolar group acrylate polymer-based dielectric elastomer material is prepared by taking hydroxybutyl acrylate as a dielectric elastomer matrix, performing esterification reaction on the dielectric elastomer matrix with organic acid, and then adding a crosslinking agent to prepare a diester-based dielectric elastomer film. The bipolar group acrylate polymer-based dielectric elastomer material solves the problems of high elastic modulus and low dielectric constant, and improves the mechanical properties, driving performance and dielectric properties of the bipolar group acrylate polymer-based dielectric elastomer material.

This invention discloses a polyimide film and its preparation method. The polyimide film is a crystalline material with grains oriented along directions parallel to the film surface plane. Specifically, the crystal orientation factor in the MD direction is 0.08–0.65, and the crystal orientation factor in the TD direction is also 0.08–0.65. The polyimide film exhibits a dielectric constant less than or equal to 3.1 at 10 GHz, a dielectric loss less than or equal to 0.010 at 10 GHz, a dielectric constant less than or equal to 3.1 at 30 GHz, and a dielectric loss less than or equal to 0.012 at 30 GHz. The polyimide film possesses characteristics such as low dielectric constant, low dielectric loss, and low moisture absorption, and the crystal orientation in the MD / TD directions is individually controllable.

Provided is a composition for glass fibers that demonstrate both a low dielectric constant and a low dielectric loss tangent and that have a low thermal expansion coefficient. Also provided is a method for producing glass fibers.　A glass composition is characterized by containing, in terms of mass%, 35-68% of SiO2, 0-40% of Al2O3, 5-40% of B2O3, 0-12% of P2O5, and 0-5.5% of Li2O + Na2O + K2O + MgO + CaO + SrO + BaO + ZnO, and further containing at least one selected from among TiO2, ZrO2, Fe2O3, MoO3, Cr2O3, SO3, SnO2, Pt, and Rh.

The invention discloses a glass fiber surface low-k SiOF coating based on a sol-gel and ultraviolet curing synergistic technology and a preparation method of the glass fiber surface low-k SiOF coating. According to the method, a sol-gel technology, a fluorine doping technology and an ultraviolet curing technology are creatively combined, and a compact, uniform and high-binding-force fluorine-doped silicon oxide coating with a low dielectric constant is constructed on the surface of the glass fiber. The dielectric constant of the coating at 10GHz is epsilon < lt >; 3.5, the dielectric loss tan [delta] lt; 0.005, the water contact angle gt; the temperature is 100 DEG C, and the water absorption is 1t; and the performance change rate is less than 10% after 96h of 85 DEG C / 85% RH aging. The invention solves the problems of high temperature, large energy consumption and easy fiber damage in traditional thermocuring, provides a low-temperature efficient surface modification technology which can be integrated with a glass fiber drawing process on line, and is suitable for the advanced electronic packaging field of high-frequency printed circuit boards and the like.

A laminate comprising one or more conductive layers and one or more electrically insulating layers coupled to the conductive layers. Each conductive layer may include at least 90 wt% copper. Each electrically insulating layer may comprise a polymer aerogel layer. For at least one of the opposing front and rear surfaces of the laminate, at least a portion of the surface is defined by one of the conductive layers.

The utility model discloses a protective Bluetooth on-machine measuring head, and particularly relates to the field of on-machine measuring heads, which comprises a machine head, a transparent shell positioned below the machine head, a probe seat positioned at the bottom of the transparent shell and a measuring head rod piece mounted at the bottom end of the probe seat, a base extending into the transparent shell is installed at the bottom end of the machine head, a Bluetooth module is installed on the outer wall of the base, the machine head, the transparent shell and the probe base are sleeved with a protection piece capable of moving in a lifting mode, and an upper limiting piece for adsorbing the top end of the protection piece is installed at the edge of the top end of the machine head. And a lower limiting piece for adsorbing the bottom end of the protection piece is arranged on the outer side of the probe seat. According to the utility model, the telescopic tube and the rubber magnetic ring form a flexible barrier to absorb the impact force of chippings and prevent the transparent shell from being scratched or broken, the transparent shell is made of a low-dielectric-constant material, the signal attenuation is small, the transmission efficiency of the Bluetooth module is ensured, and the rubber magnetic ring and the plastic telescopic tube avoid the metal shielding effect and maintain the signal integrity.

The invention relates to the technical field of wave-absorbing materials, in particular to a wave-absorbing-bearing integrated gradient composite structure and a 3D printing forming method. The wave-absorbing-bearing integrated gradient composite structure is obtained by integrally molding a wave-absorbing structure and a shielding structure through 3D printing; the shielding structure is made of conductive fiber prepreg filaments; the conductive fiber prepreg filaments are obtained by compounding conductive continuous fibers and a first thermoplastic resin matrix; the wave-absorbing structure is composed of a plurality of single-cell core array structural layers, and each single-cell core array structural layer is prepared from an electrical loss type wave-absorbing agent, low-dielectric-constant continuous fibers and a second thermoplastic resin matrix. Through collaborative optimization of a material system and structural design, integrated forming of the structure and the function is achieved, and the technical problems that an electromagnetic wave invisible structure prepared in the prior art is low in interface bonding strength, consequently, the mechanical property is insufficient, and it is difficult to consider the broadband wave absorbing performance and the high-strength bearing requirement at the same time are solved.

The invention discloses wave-transparent flame-retardant resin for a millimeter wave radome and a preparation method of the resin, and relates to a resin material with excellent wave-transparent performance and flame-retardant performance and a preparation method of the resin material. The resin is composed of fluorine-containing polyfunctional glycidyl amine type epoxy resin and a porous hollow fluorine-containing polyimide low-dielectric microsphere filler. The resin realizes low dielectric constant and low dielectric loss tangent value through specific molecular structure design and introduction of the functional filler, so that the wave-transparent performance is improved. Meanwhile, nitrogen and fluorine elements are introduced into the molecular structure, so that the resin shows a good intrinsic flame-retardant effect. The preparation method comprises the following steps: synthesizing the fluorine-containing polyfunctional glycidyl amine type epoxy resin and the porous hollow fluorine-containing polyimide low-dielectric microsphere filler, and then blending the fluorine-containing polyfunctional glycidyl amine type epoxy resin and the porous hollow fluorine-containing polyimide low-dielectric microsphere filler to obtain the wave-transparent flame-retardant resin for the millimeter wave radome. Compared with the prior art, the resin disclosed by the invention has the characteristics of keeping a low dielectric constant and a low dielectric loss tangent value at high temperature, the wave-transparent performance at high temperature is improved, and meanwhile, nitrogen and fluorine elements in a molecular structure provide an excellent intrinsic flame-retardant effect. The millimeter wave radome prepared from the resin disclosed by the invention has the advantages that the wave transmission performance is maintained, the flame retardant property is obviously improved, and the millimeter wave radome is suitable for advanced driving assistance systems (ADAS) and other millimeter wave radar application fields.

A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

The application discloses a Teflon insulating material product and a preparation method thereof. The method comprises the following steps: mixing and calendering polytetrafluoroethylene fine powder, perfluoroalkoxy resin micro powder, polymethyl methacrylate flaky particles and liquid processing aids, and performing embossing treatment on one side of the mixture to obtain a main body insulating layer strip; then, inner layer strip and outer layer strip are prepared, and the inner layer strip and the outer layer strip are combined into a blank through multi-layer staggered winding; subsequently, the polymethyl methacrylate flaky particles are removed through staged heat treatment to form cavities, and the cavity edges are closed, and finally, the Teflon insulating material product is obtained. The product is internally formed with a discrete closed microcavity structure which is continuously staggered and distributed along the length direction, and has low dielectric constant, low dielectric loss, high electrical strength and high partial discharge inception voltage.

The application relates to a semiconductor structure and a preparation method thereof, which comprises the following steps: providing a substrate containing a substrate, a floating diffusion region and a source follower, a gate structure of the source follower is located on the upper surface of the substrate, and the floating diffusion region is located on both sides of the gate structure in a first direction; forming an interlayer dielectric layer covering the substrate and the gate structure; forming grooves located on both sides of the gate structure in the interlayer dielectric layer, the bottom of the groove and the top of the gate structure are arranged in a second direction; forming a mask layer covering the sidewall of the groove; etching to form a first contact hole, a second contact hole and a connecting hole connecting the two holes based on the mask layer, the bottom of the first contact hole and the second contact hole respectively exposes the floating diffusion region and the gate structure; forming a low dielectric constant layer covering the sidewall of the first contact hole, the second contact hole and the connecting hole; and forming a connecting structure filling the first contact hole, the second contact hole and the connecting hole and covering the low dielectric constant layer. The semiconductor structure and the preparation method thereof reduce the contact resistance of the device and reduce the parasitic capacitance.

The utility model relates to the technical field of cables, in particular to a feed cable for a maglev train, which comprises a conductor. The outer wall of the conductor is coated with the semi-conductive wrapping layer; the insulating layer is extruded on the outer wall of the semi-conductive wrapping layer; the semi-conductive shielding layer is coated on the outer wall of the insulating layer; and the braided shielding layer is coated on the outer wall of the semi-conductive shielding layer. According to the utility model, the inner layer of the conductor is a circular stranded conductor, the outer layer is a fan-shaped stranded conductor, impedance rise caused by skin effect can be reduced, the insulating layer is a double-layer insulating layer, the inner layer adopts a high-density polyethylene structure, and the outer layer adopts a gradient foaming structure, so that the skin depth of high-frequency current can be effectively reduced, and the service life of the cable is prolonged. In addition, the low dielectric constant foaming layer also reduces the eddy current loss of the shielding layer, the overall thermal stability of the cable is improved, and higher current-carrying capacity can be realized.