961 results about "Low-k dielectric" patented technology

An antenna is provided. The antenna includes a feed line structure; a first low dielectric constant layer on the feed line structure; a first flexible layer on a side of the first low dielectric constant layer away from the feed line structure; a phase shifter on a side of the first flexible layer away from the first low dielectric constant layer; a first ground plate on a side of the phase shifter away from the first flexible layer; and a radiating plate on a side of the first ground plate away from the phase shifter. The first low dielectric constant layer has a dielectric constant in a range of 1.5 to 3. The first flexible layer has a Flexural modulus in a range of 0.01 to 10.0.

The invention relates to the technical field of ceramic substrates, and provides a low-dielectric-constant multilayer ceramic substrate and a preparation method thereof. The low-dielectric-constant multilayer ceramic substrate comprises the following components in parts by weight: 100 parts of aluminum oxide, 4-8 parts of a sintering aid, 8-16 parts of silicate, 3-6 parts of copper oxide, 3-5 parts of a dispersing agent, 6-12 parts of a binder and 70 parts of a solvent, the silicate comprises magnesium aluminum silicate and zirconium silicate in a weight ratio of (1.5-9): 1. According to the technical scheme, the problem that the bending strength of the multi-layer ceramic substrate is poor in the prior art is solved.

The invention relates to the field of copper-clad plates, and discloses a low-dielectric-constant high-performance copper-clad plate and a preparation method thereof.The preparation method comprises the specific steps that epoxy resin, phenolic resin, polyphenyl ether modified resin, modified nano silicon dioxide and the like are taken and mixed to obtain a resin glue solution; impregnating glass fabric in the resin glue solution to obtain a prepreg; laminating prepregs, and covering copper foil for hot pressing; the polyphenyl ether modified resin comprises epoxy resin, diallyl cyanate and fluorine-containing polyphenyl ether resin prepared by reaction of polyphenyl ether, bisphenol AF and benzoyl peroxide; the modified nano silicon dioxide is prepared by reacting allyl glycidyl ether, vinyltriethoxysilane and phenyltris (dimethylsiloxane) silane, then grafting with a phosphorus-containing intermediate to prepare a modified additive, and grafting with nano silicon dioxide, and the phosphorus-containing intermediate is prepared by reacting phenylphosphoryl dichloride and eugenol. The copper-clad plate with high flame retardance, high peel strength, heat resistance and low dielectric constant is prepared.

The present invention relates to an intrinsically high thermal conductivity-low dielectric polyimide film, its preparation method, and applications. The polyimide is composed of polyimide A and polyimide B through blending or grafting. The polyimide film of the present invention has intrinsically high thermal conductivity, low dielectric constant and loss, and excellent heat resistance and mechanical properties. It has broad application prospects in integrated circuits, electronic packaging, and other fields.

The present disclosure describes a method for forming a nitrogen-rich protective layer within a low-k layer of a metallization layer to prevent damage to the low-k layer from subsequent processing operations. The method includes forming, on a substrate, a metallization layer having conductive structures in a low-k dielectric. The method further includes forming a capping layer on the conductive structures, where forming the capping layer includes exposing the metallization layer to a first plasma process to form a nitrogen-rich protective layer below a top surface of the low-k dielectric, releasing a precursor on the metallization layer to cover top surfaces of the conductive structures with precursor molecules, and treating the precursor molecules with a second plasma process to dissociate the precursor molecules and form the capping layer. Additionally, the method includes forming an etch stop layer to cover the capping layer and top surfaces of the low-k dielectric.

The invention discloses a bending-resistant and low-dielectric transparent polyimide film for a flexible electronic device as well as a preparation method and application of the bending-resistant and low-dielectric transparent polyimide film. The surfaces of glass beads are subjected to grafting modification treatment by adopting alkali liquor and a coupling agent; performing ultrasonic dispersion to uniformly disperse the grafted and modified glass beads in a solvent; the preparation method comprises the following steps: dissolving a fluorine-containing diamine monomer in a solvent containing graft modified glass beads under a nitrogen protection atmosphere, after the fluorine-containing diamine monomer is completely dissolved, slowly adding a fluorine-containing dianhydride monomer in batches under a continuous stirring condition, and preparing a transparent polyamide acid solution containing glass beads through a condensation polymerization reaction; and uniformly coating the polyamide acid solution containing the glass beads on a glass substrate through a blade coating machine, and then carrying out gradient heating to obtain the glass bead compounded transparent polyimide film. Fluorine atoms are introduced into molecular structures of dianhydride and diamine, and grafting modified glass beads are doped to serve as filler, so that the transparent polyimide film with bending resistance and low dielectric constant characteristics is successfully prepared.

The invention discloses a low-dielectric polyimide film material and a preparation method and application thereof, and relates to the technical field of film material preparation, and the molecular structure of a polyimide copolymer in the polyimide film material comprises structural units shown in general formulas (1) and (2), the polyimide copolymer comprises aromatic ether, fluorine atoms or fluorine-containing groups and siloxane units, at least one of C and D in the structural units contains fluorine atoms or fluorine-containing groups, and the molar ratio of the content of the copolymerization components x: y: z is (1-90%): (1-50%): (1-30%). According to the preparation method, a batch feeding synthesis mode is adopted, molecular chain growth of polyamide acid is controlled through the feeding ratio, the salt forming effect of silicon-containing diamine and polyamide acid is avoided, and high-molecular-weight polyimide is obtained. The polyimide film prepared by the method has the characteristics of low dielectric constant and dielectric loss, low water absorption, good adhesion and the like, and can be applied to the fields of high-frequency and high-speed integrated circuits and the like.

The invention relates to aluminum borosilicate glass with low dielectric constant and low dielectric loss and a preparation method and application thereof, and relates to the field of aluminum borosilicate glass manufacturing, the aluminum borosilicate glass comprises the following main components by molar percentage: 60%-85% of SiO2, 0-10% of Al2O3, 2%-30% of B2O3, 0-20% of alkaline earth oxide, 0-10% of alkali metal oxide, 0-10% of ZnO, 0-1% of P2O5 and 0-2% of TiO2 and / or ZrO2; during preparation, the raw materials are melted, clarified and homogenized according to the corresponding dosage, and then are annealed for 3-8 hours at the temperature of 600-650 DEG C. The obtained aluminum borosilicate glass can reduce transmission loss during high-frequency signal transmission, has dielectric constant stability which does not exceed + / -0.5 change under a 1-30 GHz signal test, and can be applied to preparation of integrated antennas, electronic packaging and micro electro mechanical system packaging.

The invention relates to the field of fiber materials, and provides a low-dielectric constant glass fiber and a preparation method thereof, and the low-dielectric constant glass fiber comprises basalt glass fiber and a silicon oxyfluoride layer coating the surface of the basalt glass fiber. The basalt glass fiber is prepared by adopting a melting wire drawing method, the average diameter is 5.0-15.0 microns, and the volume ratio of a crystalline state to an amorphous state is controlled to be (5.0-15.0): (85.0-95.0). The thickness of the silicon oxyfluoride layer is 140-400 nm, and the silicon oxyfluoride layer is obtained through a sol-gel method and is formed by conducting dipping, ultrasonic treatment and purging on tetraethoxysilane and ammonium fluoride sol and then conducting heat treatment in an inert atmosphere. The preparation method comprises the steps of basalt raw material crushing, acid pickling, melting, wire drawing and gradient cooling, and the uniformity and stability of the fibers are ensured. The preparation conditions, impregnation parameters, purging pressure and heat treatment temperature of the modified sol are all optimized, so that uniform coating and stability enhancement are realized. The glass fiber provided by the invention has low dielectric constant and excellent heat resistance and hydrophobicity, and is suitable for the fields of high-frequency electronic substrates, aerospace and 5G communication.

According to the printed circuit board and the preparation method thereof provided by the invention, the glass core plate is used for replacing a traditional resin material, and the characteristics of low thermal expansion coefficient, low humidity coefficient and low dielectric constant of the glass core plate are utilized, so that warping and signal interference caused by temperature change and environment humidity are effectively reduced, and the stability and reliability of the PCB are remarkably improved. Meanwhile, by repeatedly constructing a multilayer layer-adding structure, adopting an ABF layer at the position adjacent to the glass substrate and adopting dielectric layers with Dk < = 3.0 and Df < = 0.001 for the rest, signal attenuation and interference can be effectively reduced, signal integrity and transmission efficiency can be ensured, overall buckling deformation of the PCB structure can be reduced or even avoided, and the PCB structure is more stable in performance. The multi-layer adding meets the requirements of different application scenarios for the number of layers of the PCB, improves the flexibility and applicability of the PCB, and enables the PCB to be especially suitable for the application scenarios of high-frequency and high-speed signal transmission.

Methods and apparatuses for depositing silicon nitride using a plasma over low-k dielectric material while protecting the low-k dielectric material are provided. The methods comprise providing a substrate having a dielectric material deposited thereon, depositing a protective layer on the dielectric material in a plasma-free environment, and after depositing the protective layer, exposing the substrate to a first plasma to deposit a first silicon nitride while converting at least a portion of the protective layer to second silicon nitride.

The invention discloses a low dielectric constant material with high heat resistance and high performance and a preparation method thereof, and belongs to the field of high polymer materials. The preparation method comprises the following steps: uniformly mixing the polyphenylene sulfide, the low dielectric glass fibers, the glass beads, the metal salt, the antioxidant and the silane coupling agent to obtain a mixture; and putting the mixture into a double-screw basic machine, and carrying out extrusion molding to prepare the low-dielectric-constant material with high heat resistance and high performance. The low dielectric property of the material is realized by utilizing the glass beads and the low dielectric glass fibers, the material has excellent performance due to the existence of the glass fibers, the material is endowed with extremely high heat resistance due to the adoption of PPS as a main base material, and the metal salt can form metal complexing action with polyphenylene sulfide due to the existence of the metal salt, so that the heat resistance of the material is improved. The dielectric constant is further reduced due to existence of copper, and the method is low in cost, simple and convenient to process and suitable for large-scale production.

The invention discloses a low dielectric constant temperature-stable phosphate microwave dielectric ceramic material for LTCC and a preparation method thereof, the chemical composition formula of the phosphate microwave dielectric ceramic material is A3-xK2x (PO4) 2, A = Ba1-ySry, x is more than or equal to 0.1 and less than or equal to 0.5, y is more than or equal to 0 and less than or equal to 1, and the phosphate microwave dielectric ceramic material comprises two phases of A3 (PO4) 2 and KAPO4; the preparation method comprises the following steps: regulating and controlling the A-site ion radius of A3 (PO4) 2-based ceramic, pre-sintering to directly synthesize complex-phase powder containing phases A3 (PO4) 2 and KAPO4 in situ in one step, then adding H3BO3 powder accounting for 1-5% of the total mass of a base material, and carrying out ball milling, drying, sieving, forming, rubber discharging and sintering to obtain a ceramic sample; the ceramic material has a low sintering temperature (850-950 DEG C), a low dielectric constant (epsilon r = 8.9-12.6), a high quality factor (Q * f = 10186-50213 GHz) and a near-zero temperature resonance frequency coefficient (-7.1-7.2 ppm / DEG C), the preparation process is simple, the cost is low, the raw materials are non-toxic and easy to obtain, and the ceramic material is suitable for being used as an LTCC dielectric substrate material and has important industrial application value.

A semiconductor device having a low-k isolation structure and a method for forming the same are provided. The semiconductor device includes channel structures, laterally extending on a substrate; gate structures, intersecting and covering the channel structures; and a channel isolation structure, laterally penetrating through at least one of the channel structures, and extending between separate sections of one of the gate structures along an extending direction of the one of the gate structures. A low-k dielectric material in the channel isolation structure comprises boron nitride.

Disclosed is a display device having enhanced touch sensitivity by providing an organic encapsulation layer with a low dielectric constant. The display device includes a substrate, a transistor located on the substrate, a light emitting diode electrically connected to the transistor, a first inorganic encapsulation layer located on the light emitting diode, the organic encapsulation layer located on the first inorganic encapsulation layer, and a second inorganic encapsulation layer located on the organic encapsulation layer, in which the organic encapsulation layer includes a plurality of composites, and each of the plurality of composites comprising a plurality of nucleotides and a hollow polymer.

The invention relates to a motor outgoing line technology, and discloses a special material for a motor outgoing line. The polyimide composite material is prepared from the following components in percentage by weight: 50 to 70 percent of polyimide matrix material, 5 to 12 percent of nano-scale low-dielectric-constant filler, 10 to 20 percent of micron-scale reinforcing filler, 3 to 8 percent of conductive filler, 0.5 to 2 percent of interface regulating agent and 1 to 3 percent of processing aid. The invention also provides a preparation method of the special material for the motor outgoing line. The preparation method comprises the following steps: S1, carrying out surface modification on a nanoscale low-dielectric-constant filler and an interface regulating agent through solvent dispersion; by adopting the technical scheme of compounding the surface modified silicon dioxide nanoparticles and the polyimide matrix, the technical effects of reducing the dielectric constant and reducing the leakage current are achieved. By modifying the filler, the dispersity and interface bonding property of particles are improved, and the defects of high dielectric constant and large leakage current caused by interface polarization and uneven distribution of the filler in the prior art are overcome.

The invention relates to the field of semiconductors, and provides a semiconductor device, a manufacturing method, a chip and electronic equipment. The semiconductor device comprises a substrate, a well region, a buffer region, a source region, a drain region, a dielectric layer and a grid electrode, the well region, the buffer region, the source region and the drain region are located on the substrate, the source region is formed on the surface of the well region, and the drain region is formed on the surface of the buffer region. The dielectric layer comprises a first dielectric layer made of a high dielectric constant material and a second dielectric layer made of a low dielectric constant material, and the first dielectric layer is located on the surface of the substrate between the well region and the buffer region and extends to the surface of the well region; the gate is located on the surface of the first dielectric layer, and the second dielectric layer is located on the surfaces of the buffer region and the drain region. An inversion channel is formed in the substrate between the well region and the buffer region by using the first dielectric layer made of a high-dielectric-constant material, so that the on-resistance is reduced; the breakdown voltage of the drain end is improved through the buffer region, the gate-drain capacitance is reduced through the second dielectric layer made of the low-dielectric-constant material, and meanwhile the voltage withstanding characteristic of the gate and the drain end is improved.

The invention discloses a low-dielectric-constant polyamide material, and relates to the technical field of high polymer materials. The invention discloses a low-dielectric-constant polyamide material. The composite material is prepared from the following raw materials in parts by weight: 35 to 45 parts of polyamide 66, 5 to 10 parts of polytetrafluoroethylene micro powder, 8 to 12 parts of modified porous siloxane microspheres, 3 to 7 parts of modified nano zinc oxide, 10 to 15 parts of glass fibers, 4 to 8 parts of polyether-ether-ketone, 1 to 3 parts of graphene nanosheets, 3 to 5 parts of fluororubber, 1 to 2 parts of a titanate coupling agent, 0.3 to 0.7 part of an antioxidant 1010, 0.5 to 1.0 part of ethylene bis stearamide and 0.1 to 0.3 part of an ultraviolet absorbent UV-531. The low-dielectric-constant polyamide material has the remarkable advantages that the raw materials are scientifically proportioned, and various modified components are contained to enhance the performance; all the components are subjected to special treatment, so that the compatibility is good; the preparation process is rigorous, and the material has excellent dielectric properties; and the material also has good heat resistance and weather resistance and strong mechanical properties, and is suitable for various scenes with high dielectric constant requirements.

The invention belongs to the field of microwave dielectric ceramic materials, and particularly provides a method for improving the performance of zinc aluminate microwave ceramic based on an LBSCA (Li2O-B2O3-SiO2-CaO-Al2O3) composite sintering aid, so that the prepared zinc aluminate microwave dielectric ceramic material has a low dielectric constant and a high thermal expansion coefficient, and is suitable for manufacturing a ceramic substrate with excellent performance. According to the invention, a Zn < 0.90 > Co < 0.10 > Al < 2 > O < 4 > system is adopted, an LBSCA (Li2O-B2O3-SiO2-CaO-Al2O3) composite sintering aid is introduced, and sintering and dielectric properties are optimized through a plurality of mechanisms. The doping of the LBSCA glass has obvious influence on the microstructure and density of the ceramic, and the microwave dielectric property of the ceramic is further improved. According to the invention, when the sintering temperature is 1175 DEG C and x is equal to 1.5 wt%, the optimal performance is as follows: epsilon r is equal to 5.25, Q * f is equal to 7334 GHz, and tauf is equal to-25.18 ppm / DEG C; the CTE value is the maximum value of 11.18 ppm / DEG C.

The invention relates to a high frequency cable coupler. Compact cable couplers connect cables with different wire gauges and do not interfere with electrical performance up to very high frequencies. Each cable coupler has a pair of conductive elements having first and second contact portions on opposite ends that terminate the wires of the first and second cables. A housing surrounds the conductive element, including a cable attachment. The conductive layer extends from the first cable to the second cable and is conformal with the underlying surface. The housing has a region having a lower dielectric constant adjacent the cable attachment. A parameter of the cable coupler in each of the plurality of portions may be selected to provide a matched impedance through the coupler. Such couplers enable dense connection of small diameter cables with connectors while large diameter cables provide low loss routing to remote locations to achieve high density signal connections with high signal integrity at frequencies sufficiently high to support 224 Gbp.

The invention provides hot-melt wave-absorbing resin, a low-frequency wave-absorbing prepreg and application of the hot-melt wave-absorbing resin and the low-frequency wave-absorbing prepreg in a low-broadband magnetic wave-absorbing composite material. The hot-melt wave-absorbing resin is prepared from the following raw materials: hot-melt resin and a composite absorbent, the composition comprises a combination of a coupling agent modified conductive absorbent and a magnetic absorbent. The raw materials of the low-frequency wave-absorbing prepreg comprise the hot-melt wave-absorbing resin and reinforced fibers with low dielectric constant and low gram weight. The hot-melt wave-absorbing resin provided by the invention realizes the low-frequency wave-absorbing performance covering 1GHz. Through the synergistic effect of the conductive absorbent and the magnetic absorbent, the broadband wave-absorbing prepreg covering low frequency is prepared by using a hot melting method, the dielectric loss of the wave-absorbing prepreg is improved, and the low-frequency wave-absorbing performance is enhanced. And the formula can be changed according to frequency band requirements to meet the wave absorbing requirements of different frequency bands (from 0.3 GHz to 18GHz). According to the low-broadband magnetic wave-absorbing composite material with the wave-absorbing honeycomb provided by the invention, the wave-absorbing bandwidth coverage is expanded by 1-18 GHz.

Embodiments provide an integrated capacitor disposed directly over and aligned to a vertical gate all around memory cell transistor. In some embodiments, an air gap may be provided between adjacent word lines to provide a low k dielectric effect between word lines. In some embodiments, a bottom bitline structure may be split across multiple layers. In some embodiments, a second tier of vertical cells may be positioned over a first tier of vertical cells.

To provide a solid composition which achieves both a low dielectric constant and a low coefficient of linear expansion.SOLUTION: A solid composition contains a fluorine resin, and a fibrous anisotropic filler, where a reduction rate of a coefficient of linear expansion at 20°C to 200°C of the solid composition to a coefficient of linear expansion at 20°C to 200°C of the fluorine resin is 50% or more.SELECTED DRAWING: None

The invention relates to an electronic component material technology, and aims to provide an LTCC (Low Temperature Co-Fired Ceramic) material with low dielectric constant and low dielectric loss and a preparation method thereof. The LTCC material is prepared from zinc borosilicate glass and zinc borosilicate microcrystalline glass with different softening point ranges, a ceramic filler, silicate and a metal oxide through ball milling, mixing, modeling and sintering, and the material contains Zn2SiO4 with a devitrified phase. According to the invention, two kinds of zinc borosilicate glass with different softening points are adopted as cooling assistants, and a devitrified phase Zn2SiO4 is generated through reaction in the sintering process, so that the problem of large dielectric loss of a composite system caused by more glass phases can be effectively improved; by flexibly regulating and controlling the content of each component and the components of the auxiliary materials, the sintering characteristics of the glass internal component regulation and control material are optimized, and the success rate of matching and co-firing of the material and silver is further improved; meanwhile, the sintering window is relatively wide, so that good quality stability of the product is favorably kept; the dielectric loss of the composite system is reduced by doping the nucleating agent, and the volume shrinkage process of the material is regulated and controlled.

A thermally curable modified polymer having high frequency and low dielectric constant, a synthesis method therefor and a use thereof. The thermally curable modified polymer has a monomer structure as shown in the following formula I. The thermally curable modified polymer can be widely applied to the fields of high-frequency communications, microelectronics industry, aerospace and the like as a low-dielectric-constant matrix resin or packaging material.

The disclosure relates to a multi-layered laminate comprising multiple metal foil layers and multiple dielectric (insulating) layers. At least one of the insulating layers includes a copolymer containing diisoalkenylarene (DIAEA) and divinylarene (DVA) units, optionally combined with a filler and / or another dielectric polymer. Another insulating layer includes another dielectric polymer distinct from the DIAEA-DVA copolymer. At least one copolymer-containing insulating layer is positioned adjacent to a metal foil layer. This copolymer layer enhances thermal stability at elevated temperatures and provides improved electrical performance such as reduced dielectric constant (Dk) and dissipation factor (Df) along with excellent processability.

To provide a ceramic having a high coefficient of thermal expansion and a low dielectric constant.SOLUTION: 50.0 to 90.0 mass% of 2MgO and SiO2, a total of 8.0 mass% or more of one of 7.0 to 14.0 mass% of ZrO2 and 10.0 to 50.0 mass% of Al2O3 or both of 14.0 mass% or less of ZrO2 and 50.0 mass% or less of Al2O3, and 3.0 to 15.0 mass% of one or more selected from Y2O3, CaO, CeO2, and HfO2, wherein a crystalline structure of the is a cubic structure. ZrO2.SELECTED DRAWING: None

The invention discloses a preparation method of a low-dielectric-constant and high-heat-resistance LCP composite material for communication equipment. The preparation method sequentially comprises the following steps: S1, preparing the following raw materials in parts by mass: 50-80 parts of a liquid crystal polymer, 1-10 parts of glass fibers, 10-20 parts of inorganic fibers, 0-2 parts of a surface treating agent and 0.5-2 parts of a processing aid; S2, treating the surfaces of the inorganic fibers by adopting the surface treating agent; s3, mixing the liquid crystal polymer and the processing aid in a rotary mixer in proportion, and feeding from a main feed opening of the double-screw extruder; the preparation method comprises the following steps: mixing glass fibers and inorganic fibers according to a certain adding ratio by a mixer, feeding from a side feeding port of an extruder by a screw feeder, and carrying out melt mixing extrusion granulation. According to the invention, the defect that the LCP is easy to bubble after being involved in water vapor is overcome, the use temperature of the material is increased, and the application range of the LCP in a low-dielectric material in mobile phone components is widened.

The invention provides a low-dielectric-constant material dielectric property prediction method and system based on machine learning, and the method comprises the steps: obtaining material data, and carrying out the preprocessing to obtain basic attributes; performing feature engineering to obtain a feature matrix; dividing the feature matrix into a data set and processing the data set; training the model to obtain an optimal model; and evaluating the optimal model, and serializing and storing the optimal model. The structure of a machine learning method combining specific feature engineering, training data noise enhancement, a sample weighting strategy and a random forest model solves the problem that an existing machine learning model accurately predicts a specific low dielectric constant (lt; and 5) the problems that the precision in the aspect of materials is insufficient and the efficiency of a traditional material screening method is low are solved, and the efficiency and accuracy of discovery of the low-dielectric-constant new materials and the robustness and generalization ability of prediction are improved.

The invention discloses a flame-retardant layer-adding film with high copper peel strength and low dielectric constant and loss and a preparation method of the flame-retardant layer-adding film, and belongs to the technical field of resin composite materials. By designing components of the layer-adding film, a pyrazole ring is introduced into epoxy resin to synthesize a novel pyrazole modified epoxy resin material, and the interaction between the layer-adding film and a copper foil is enhanced by adding the novel epoxy resin, so that the copper peel strength is improved; a tertiary amine structure exists in the novel epoxy resin structure, and curing of a layer-adding film can be promoted. The layer-adding film is composed of epoxy resin, a curing agent, an accelerant, filler, a flame retardant and the like, and the problems that an existing layer-adding film material is poor in copper adhesive force, large in dielectric constant and loss and poor in flame retardant property can be effectively solved.