111 results about "Low-k dielectric" patented technology

This application provides a temperature-stable low-dielectric silicate LTCC material and its preparation method, relating to the field of low-dielectric microwave dielectric ceramics technology. The low-dielectric silicate LTCC material has the following chemical formula: x Na2O- y CaO- z SiO2- m CaSnSiO5- n The compound of B2O3 was prepared, wherein 0.8 ≤ x ≤1.2, 1.8≤ y ≤2.2, 2.9≤ z ≤3.3, 0.6≤ m ≤1.5, 0.03≤ n The dielectric constant is ≤0.1; the chemical formula of its main crystalline phase is Na2Ca2Si3O9. The temperature-stable low-dielectric silicate LTCC material prepared using the above method overcomes the defect of poor temperature stability in the synthesis of low-dielectric microwave dielectric ceramics in existing technologies. The prepared low-dielectric silicate LTCC material has the characteristics of low dielectric constant, temperature stability, and a sintering temperature below 950℃. It has the advantages of simple synthesis process, stable main crystalline phase composition, and low raw material price, making it a suitable low-dielectric LTCC material for millimeter-wave communication.

Implementations of the present disclosure generally relate to low k dielectric films disposed over a substrate. More particularly, implementations described herein provide, organic framework low k dielectric films and methods for forming the same. In at least one implementation, a process for depositing a film is provided and includes sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, where the film has a dielectric constant (k) of 3 or less.

Described herein are a cleaning composition, a wet-etch composition including the cleaning composition and one or more oxidants, and a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.

The application discloses a bipolar group acrylate polymer-based dielectric elastomer material and a preparation method thereof, and belongs to the technical field of polymer synthesis. The method comprises the following steps: uniformly mixing hydroxybutyl acrylate and dichloromethane, adding organic acid and acylation catalyst, stirring and reacting, and obtaining a hydroxybutyl acrylate-based diester monomer after purification; then adding a crosslinking agent and a photoinitiator, uniformly mixing, and obtaining the bipolar group acrylate polymer-based dielectric elastomer material after solidification and crosslinking under ultraviolet light irradiation. The bipolar group acrylate polymer-based dielectric elastomer material is prepared by taking hydroxybutyl acrylate as a dielectric elastomer matrix, performing esterification reaction on the dielectric elastomer matrix with organic acid, and then adding a crosslinking agent to prepare a diester-based dielectric elastomer film. The bipolar group acrylate polymer-based dielectric elastomer material solves the problems of high elastic modulus and low dielectric constant, and improves the mechanical properties, driving performance and dielectric properties of the bipolar group acrylate polymer-based dielectric elastomer material.

This invention discloses a polyimide film and its preparation method. The polyimide film is a crystalline material with grains oriented along directions parallel to the film surface plane. Specifically, the crystal orientation factor in the MD direction is 0.08–0.65, and the crystal orientation factor in the TD direction is also 0.08–0.65. The polyimide film exhibits a dielectric constant less than or equal to 3.1 at 10 GHz, a dielectric loss less than or equal to 0.010 at 10 GHz, a dielectric constant less than or equal to 3.1 at 30 GHz, and a dielectric loss less than or equal to 0.012 at 30 GHz. The polyimide film possesses characteristics such as low dielectric constant, low dielectric loss, and low moisture absorption, and the crystal orientation in the MD / TD directions is individually controllable.

A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

The application discloses a Teflon insulating material product and a preparation method thereof. The method comprises the following steps: mixing and calendering polytetrafluoroethylene fine powder, perfluoroalkoxy resin micro powder, polymethyl methacrylate flaky particles and liquid processing aids, and performing embossing treatment on one side of the mixture to obtain a main body insulating layer strip; then, inner layer strip and outer layer strip are prepared, and the inner layer strip and the outer layer strip are combined into a blank through multi-layer staggered winding; subsequently, the polymethyl methacrylate flaky particles are removed through staged heat treatment to form cavities, and the cavity edges are closed, and finally, the Teflon insulating material product is obtained. The product is internally formed with a discrete closed microcavity structure which is continuously staggered and distributed along the length direction, and has low dielectric constant, low dielectric loss, high electrical strength and high partial discharge inception voltage.

Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include memory strings with a conductor channel shell and a low dielectric constant central region. In one example, memory devices, systems and methods include memory strings with a conductor channel shell and a hollow central region.

This invention relates to the field of polymer materials technology, specifically to a low-dielectric LCP composite material, its preparation method, and its applications. The low-dielectric LCP composite material comprises the following raw materials in the indicated mass fractions: 70-95% LCP, 5-30% low-dielectric filler, 1-5% surface modifier, 0.1-1% antioxidant, and 0.1-1% lubricant. This LCP composite material exhibits excellent low dielectric constant, low dielectric loss, mechanical properties, and thermal stability, and can be applied to high-frequency electronic components.

The application discloses a preparation method of a material for an electronic product shell and relates to the technical field of polymer preparation, and the preparation method comprises the following steps: 1) Boc-polyamide acid prepolymer preparation; 2) compounding and foaming; and 3) forming and stepwise curing crosslinking. By introducing Boc-lysine and fluorine-containing monomers, the application overcomes the bottleneck of difficult solubility and processing of polyimide, and realizes high solid content processing and foaming. A unique physical and chemical synergistic foaming mechanism and a fiber interface chemical bonding technology are designed and adopted, and a composite material with the characteristics of ultralight weight, high strength, 200 DEG C high-temperature resistance, intrinsic flame retardance and ultralow dielectric constant is successfully prepared.

A system and method for a polymer with a low dielectric constant applied in targeted areas of a semiconductor using additive manufacturing and a second polymer having high thermal conductivity encasing the entire semiconductor are disclosed. The method may include applying, using an additive manufacturing technique, a first polymer to a first area of a semiconductor die. The first polymer may include a first filler having a dielectric constant of 3.3 or less. The method may also include applying a second polymer over the first polymer and encapsulating the semiconductor die. The second polymer may be different from the first polymer.

An adhesive composition has a low dielectric constant, a low dielectric loss tangent, and an excellent folding endurance. The adhesive composition includes: with respect to the total of 100 parts by mass of the adhesive composition, 75 to 90 parts by mass of a styrene elastomer; 3 to 25 parts by mass of a modified polyphenyleneether resin having a polymerizable group at an end; and totally 10 parts by mass or less of an epoxy resin and an epoxy resin curing agent, wherein the styrene ratio of the styrene elastomer is less than 30%.

The present invention involves a method for depositing low-k dielectric material in a feature, the method comprising: depositing a silicon-containing layer in one or more recessed features of a substrate; exposing at least a portion of the silicon-containing layer to an oxygen-containing species, thereby forming a silicon oxide-containing portion in the silicon-containing layer; and at least partially etching the silicon oxide-containing portion.

This invention relates to the field of high-temperature resistant, low-dielectric polymer materials technology, and particularly to a diamine monomer containing an adamantane structure and its preparation method, polyimides and their preparation methods and applications, and polyimide films. The adamantane-containing diamine monomer has the following structure: wherein R1, R2, and R3 are the same or different, and each independently represents -H, C1-6 alkyl, halogenated C1-6 alkyl, methoxy, phenyl, -F, -Cl, or -Br. This invention introduces an adamantane alkyl group and a flexible ether bond into an aromatic diamine monomer, enabling the reaction of the diamine monomer with dianhydrides as a raw material for preparing polyimides to obtain polyimides with high solubility, high transparency, and low dielectric constant.

An interconnect structure includes a barrier layer, an oxide glue layer, and an ultra low-k dielectric layer. The oxide glue layer is located on the barrier layer. The ultra low-k dielectric layer is located on the oxide glue layer, wherein the oxide glue layer is located between the barrier layer and the ultra low-k dielectric layer, and the ultra low-k dielectric layer has porosity less than 40%.

The utility model relates to the field of microwave plasma technology, more particularly to a kind of reaction cavity and MPCVD device, the reaction cavity includes antenna, the antenna is provided with dielectric plate between reaction cavity, the dielectric plate is low dielectric constant material, the dielectric plate is uniformly spaced, provide a kind of reaction cavity of electric field distribution uniformity, the MPCVD device includes the reaction cavity.

This invention provides an epoxy resin composite material with low dielectric constant and dielectric loss, prepared from hollow microspheres and epoxy resin. The hollow microspheres are selected from nano-hollow organic microspheres or nano-hollow inorganic microspheres. The epoxy resin composite material provided by this invention can be uniformly dispersed in an epoxy resin matrix. In particular, the nano-hollow organic microspheres can still be uniformly dispersed in the matrix even when the addition amount is not less than 10%, achieving low dielectric constant and low dielectric loss in the composite material. The results show that compared with an unfilled epoxy resin matrix, the dielectric constant and dielectric loss of the prepared hollow microsphere / epoxy resin composite material are significantly reduced, with the lowest dielectric constant reaching 1.58 and the lowest dielectric loss reaching 0.013 at 1MHz.

This invention provides a microwave dielectric ceramic material and its preparation method for low ESR capacitors, belonging to the field of ceramic materials technology. By optimizing the composition and ratio of the main material, sintering aid, and modifying additives, this invention achieves both low dielectric constant and low ESR (high Q value) while maintaining an extremely stable temperature coefficient, effectively solving the problem of simultaneously achieving dielectric performance and temperature stability in existing technologies. The microwave dielectric ceramic material provided by this invention can be sintered in a reducing atmosphere and can be used to prepare low ESR, high Q value, and narrow temperature coefficient copper electrode multilayer ceramic capacitors, avoiding silver migration phenomenon in silver-internal electrode MLCCs, effectively improving device reliability and lifespan. It has broad application prospects in high-end fields such as communication base stations, radar, medical equipment, military industry, and AI servers, and the microwave capacitors prepared from it have significant practical value and market application prospects.

Differential driving and / or sensing can reduce noise in a touch screen. In some examples, the touch screen can include column and row electrodes routed vertically in the active area. In some examples, the touch electrodes and / or routing traces can be implemented using metal mesh in first and second metal layers. To improve optical performance, overlapping portions of metal mesh can be designed to provide an appearance of uniform width / area. In some examples, a dielectric layer can have an increased thickness and / or a reduced dielectric constant, and / or metal mesh in the first metal layer can be flooded with a transparent conductive material. In some examples, routing traces can be disposed beneath touch electrodes and / or metal mesh for touch electrodes can be flooded with a transparent conductive material without flooding metal mesh for routing traces. In some examples, touch electrodes can be interleaved within a touch node to improve differential cancelation.

Methods and systems for forming structures including a layer of low dielectric constant material on a surface of a substrate and structures and devices formed using the methods or systems are disclosed. An exemplary method includes providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, providing one or more reactants, including a mixture of a nitrogen and oxygen containing reactant and a hydrogen containing reactant, and providing pulsed plasma power to polymerize the one or more precursors within the reaction chamber.

This invention discloses a type 0-3 polymer ferroelectric composite material for use in integrated circuit interposers and its preparation method. The composite material consists of an epoxy resin matrix and KBiFe2O5 ferroelectric powder dispersed therein, with 100 parts by mass of epoxy resin and 5-50 parts by mass of KBiFe2O5. KBiFe2O5 has a layered perovskite structure and a low intrinsic dielectric constant (<3.5), and a coefficient of thermal expansion of only 1.6-10 ppm / K. Surface modification of the ferroelectric powder with a silane coupling agent can significantly improve its interfacial bonding strength with the epoxy resin. This invention utilizes a type 0-3 composite structure to achieve adjustable coefficient of thermal expansion of the composite material within the range of 3-20 ppm / K while maintaining a low dielectric constant (3.0-3.8@1 MHz) and low dielectric loss (<0.005@1 MHz), enabling good matching with silicon chips (CTE approximately 3-5 ppm / K) and effectively reducing thermal cycling stress. The composite material has a simple preparation process, is compatible with existing packaging production lines, and is suitable for use as an interposer material in three-dimensional integrated circuit packaging, showing promising application prospects.

Providing an unsaturated group-containing amino resin from which a cured product with a low dielectric tangent can be obtained. 【Solution means】The unsaturated group-containing amino resin contains a structure represented by formula (1). n is an integer of 1 or more, and R 1 is a group represented by formula (2), and R 2 is a crosslinking group. R 3 is an organic group having at least one unsaturated group selected from the group consisting of a vinylbenzyl group, an alkenyl group having 2 to 20 carbon atoms, an acryloyl group, and a methacryloyl group, or a hydrogen atom, and Ar 1 is a phenylene group or a naphthylene group, and Ar 2 is a phenylene group, a naphthylene group, or a group represented by formula (3). R 4 is the organic group having the unsaturated group or a hydrogen atom, and Ar 3 and Ar 4 are each independently a phenylene group or a naphthylene group. R 3 and R 4 In at least a part of them, they are organic groups having the unsaturated group. [Chemical formula 1] TIFF2026092925000027.tif29170

An electronic component that comprises a laminate in which a plurality of low-temperature fired ceramic layers are laminated, wherein: the laminate is provided with a first layer that is positioned on one main surface and a second layer that is in contact with the first layer; the first layer and the second layer are formed from a low dielectric constant ceramic that contains a post-firing glass component (A1) and an oxide (C1) of a ceramic crystal component; the post-firing glass component (A1) is RO-Zno-Al2O3-B2O3-SiO2 wherein RO is at least one selected from the group consisting of MgO, CaO, SrO, and BaO; the ratio of RO, the ratio of ZnO, and the ratio of Al2O3 contained in the post-firing glass component (A1) are 0.1 mol% to 10 mol% inclusive; the sum of the ratio of RO, the ratio of ZnO, and the ratio of Al2O3 contained in the post-firing glass component (A1) is 15 mol% or less; the ratio (SiO2 / B2O3) of SiO2 and B2O3 contained in the post-firing glass component (A1) is less than 3.4; the oxide (C1) of the ceramic crystal component contains at least one selected from the group consisting of SiO2, BaAl2Si2O8, ZnAl2O4, and Zn2SiO4; and the amount of quartz contained in the first layer is smaller than the amount of quartz contained in the second layer.

This invention provides a method and structure for improving the reliability of metal interconnects. The method includes: providing a substrate with metal lines and an extremely low dielectric constant dielectric layer; performing plasma treatment on the exposed surface of the metal lines to remove oxides; depositing a dielectric buffer layer on the treated metal line surface and the extremely low dielectric constant dielectric layer; and depositing a dielectric barrier layer on the dielectric buffer layer. The coefficient of thermal expansion of the dielectric buffer layer is between that of the dielectric barrier layer and the extremely low dielectric constant dielectric layer. The adhesion force of the dielectric buffer layer to the metal lines is greater than that of the dielectric barrier layer. This application alleviates the thermal stress mismatch at heterogeneous interfaces and suppresses interface delamination by constructing a gradient coefficient of thermal expansion structure. Simultaneously, the high adhesion interface significantly suppresses atomic migration, resulting in a 2-fold increase in electromigration lifetime and a 175-fold increase in breakdown lifetime over time.

The present invention provides a multilayer ceramic dielectric for an inductor and an inductor using same, wherein a first anodic oxide film having a low porosity due to having relatively small pores or a relatively small number of pores is positioned on upper and lower surface layers, and a second anodic oxide film having a large porosity due to having relatively large pores or a relatively large number of pores is positioned on inner layers positioned between the upper and lower surface layers to make the dielectric constant high on the upper and lower surfaces and low in an inner region so that a current path operates efficiently on the surface sides, and the efficiency of magnetic field passage inside can be enhanced to improve high-frequency characteristics.

The application discloses a method for removing transition metal impurities in a non-aqueous system by using an anion exchange resin, and belongs to the technical field of metal impurity removal. The method has high selectivity and strong impurity removal capacity through the joint action of a low dielectric constant organic solvent and a specific anion exchange resin. Specifically, in a non-aqueous low dielectric environment, the method can realize the simultaneous and efficient removal of various transition metal impurities, and the target metal ions are not adsorbed basically, so that the loss of the target metal is reduced significantly, and high-selectivity separation is realized. Moreover, the method is green and environmentally friendly, and has low wastewater load. Specifically, the system does not need to add high-concentration acid or inorganic salt precipitant, so that the generation of high-salt wastewater and acid-alkali waste liquid is avoided from the source. In addition, the anion exchange resin of the method has mild regeneration conditions and long service life. Specifically, the saturated resin can be quickly desorbed and regenerated by using low-concentration acid, so that the destruction of the resin structure under high-acid and high-salt conditions is avoided, the service life of the resin in circulation is prolonged, and the cost is reduced.

The application discloses a method for improving reliability of a metal interconnection layer and a preparation method of a semiconductor structure. The method for improving reliability of the metal interconnection layer comprises the following steps: after forming a via hole with a metal interconnection layer in a low dielectric constant layer based on a photoresist pattern, performing ashing treatment on the photoresist; performing step-by-step dry etching using carbon dioxide as etching gas, wherein the step-by-step dry etching at least comprises sequentially performed first etching and second etching, wherein the high-frequency radio frequency power of the first etching and the second etching is kept as 0 W, the low-frequency radio frequency power of the first etching is greater than that of the second etching, the cavity pressure of the first etching is greater than that of the second etching, and the etching gas flow of the first etching is greater than that of the second etching. The application optimizes ashing conditions / demolding conditions of the dry etching to reduce surface damage of the low dielectric constant layer, and further improves the reliability of the metal wire.

The application discloses a kind of scintillation detector monitoring method, device, equipment and medium, the method includes: the light-emitting lifetime of original scintillator in scintillation detector is obtained;If light-emitting lifetime is greater than preset light-emitting lifetime threshold, replacement instruction is sent to replace original scintillator with target scintillator, so that the light-emitting lifetime of target scintillator is within preset light-emitting lifetime threshold, wherein the dielectric constant of organic layer in target scintillator is less than the dielectric constant of organic layer in original scintillator.By replacing original scintillator, the target scintillator after replacement has an organic layer with a lower dielectric constant than the original scintillator.By using an organic material with a smaller dielectric constant for the organic layer without changing the inorganic layer, the light-emitting lifetime of the scintillator can be effectively reduced to meet the demand for higher time resolution in the field of radiation detection.This method is simple and effective, and has a significant effect on improving the time resolution in the field of radiation detection.

There is provided hollow resin particles used in a resin composition for semiconductor members, which can be used in a resin composition for semiconductor members to provide a semiconductor member capable of exerting excellent low dielectric properties. The hollow resin particles used in a resin composition for semiconductor members according to an embodiment of the present invention are hollow resin particles having a hole part inside the particle, wherein a decreasing rate of a relative dielectric constant Dk1 of a film (F1) formulated with 80 parts by weight of polyimide and 20 parts by weight of the hollow resin particles to a relative dielectric constant Dk0 of a film (F0) formed with only the polyimide is 3% or more.

This invention discloses an OC transparent composition for CF substrates that combines low hygroscopicity and low dielectric constant, comprising the following raw materials in weight percentages: 1-5% hyperbranched oligomer, 1-5% modified polybutadiene oligomer, 0.01-3% fluorinated modified calixarene oligomer, 1-14% reactive diluent containing four to eight polymerizable functional groups, 1-10% acrylic resin, 0.01-5% epoxy resin, 0.2-0.5% leveling agent, 0.1-5% silane coupling agent, 0.1-5% curing accelerator, 0.01-0.2% polymerization inhibitor, 0.01-0.2% antioxidant, and 70-90% electronic grade organic solvent. This invention not only maintains the main properties of the OC coating for transparent protective composition of CF substrate, such as high hardness, high thermal stability, high planarization ability, and high barrier properties, but also gives the OC coating excellent low moisture absorption and low dielectric constant, which greatly reduces energy consumption in the flat panel display cell assembly process and broadens the application range of OC materials in large-size, high-speed, high-frequency LCD displays.