1229 results about "Low-k dielectric" patented technology

An antenna is provided. The antenna includes a feed line structure; a first low dielectric constant layer on the feed line structure; a first flexible layer on a side of the first low dielectric constant layer away from the feed line structure; a phase shifter on a side of the first flexible layer away from the first low dielectric constant layer; a first ground plate on a side of the phase shifter away from the first flexible layer; and a radiating plate on a side of the first ground plate away from the phase shifter. The first low dielectric constant layer has a dielectric constant in a range of 1.5 to 3. The first flexible layer has a Flexural modulus in a range of 0.01 to 10.0.

The invention relates to the technical field of ceramic substrates, and provides a low-dielectric-constant multilayer ceramic substrate and a preparation method thereof. The low-dielectric-constant multilayer ceramic substrate comprises the following components in parts by weight: 100 parts of aluminum oxide, 4-8 parts of a sintering aid, 8-16 parts of silicate, 3-6 parts of copper oxide, 3-5 parts of a dispersing agent, 6-12 parts of a binder and 70 parts of a solvent, the silicate comprises magnesium aluminum silicate and zirconium silicate in a weight ratio of (1.5-9): 1. According to the technical scheme, the problem that the bending strength of the multi-layer ceramic substrate is poor in the prior art is solved.

The invention relates to the field of copper-clad plates, and discloses a low-dielectric-constant high-performance copper-clad plate and a preparation method thereof.The preparation method comprises the specific steps that epoxy resin, phenolic resin, polyphenyl ether modified resin, modified nano silicon dioxide and the like are taken and mixed to obtain a resin glue solution; impregnating glass fabric in the resin glue solution to obtain a prepreg; laminating prepregs, and covering copper foil for hot pressing; the polyphenyl ether modified resin comprises epoxy resin, diallyl cyanate and fluorine-containing polyphenyl ether resin prepared by reaction of polyphenyl ether, bisphenol AF and benzoyl peroxide; the modified nano silicon dioxide is prepared by reacting allyl glycidyl ether, vinyltriethoxysilane and phenyltris (dimethylsiloxane) silane, then grafting with a phosphorus-containing intermediate to prepare a modified additive, and grafting with nano silicon dioxide, and the phosphorus-containing intermediate is prepared by reacting phenylphosphoryl dichloride and eugenol. The copper-clad plate with high flame retardance, high peel strength, heat resistance and low dielectric constant is prepared.

The invention provides an EML laser and a preparation method of an air bridge, belongs to the technical field of optical communication lasers, and is used for solving the problem that the stray capacitance of connecting metal between a waveguide electrode and a PAD electrode of the EML laser is too large. The preparation method of the air bridge process of the EML comprises the following steps: growing a mask layer on the surface of an epitaxial InP wafer, photoetching to form a ridge waveguide pattern, etching the mask layer by adopting ICP (Inductively Coupled Plasma), and removing photoresist; etching the ohmic contact layer by adopting ICP (Inductively Coupled Plasma) and removing the mask layer; gluing and photoetching the surface of the wafer to form a pier pattern; adopting ICPCVD to grow a dielectric film at low temperature; gluing and photoetching the surface of the wafer to form a dielectric film bridge pattern; carrying out ICP etching on the dielectric film and removing the bridge and pier photoresist to form a dielectric film bridge; and performing wet etching on the InP epitaxial layer to the etching stop layer. According to the method, the dielectric film bridge is built at the connecting metal between the waveguide electrode and the PAD electrode, the low dielectric constant characteristic of air is utilized, the distance between the metal and the quantum well is greatly increased, the stray capacitance of the EML is reduced, and the bandwidth is improved.

The present invention relates to an intrinsically high thermal conductivity-low dielectric polyimide film, its preparation method, and applications. The polyimide is composed of polyimide A and polyimide B through blending or grafting. The polyimide film of the present invention has intrinsically high thermal conductivity, low dielectric constant and loss, and excellent heat resistance and mechanical properties. It has broad application prospects in integrated circuits, electronic packaging, and other fields.

The present disclosure describes a method for forming a nitrogen-rich protective layer within a low-k layer of a metallization layer to prevent damage to the low-k layer from subsequent processing operations. The method includes forming, on a substrate, a metallization layer having conductive structures in a low-k dielectric. The method further includes forming a capping layer on the conductive structures, where forming the capping layer includes exposing the metallization layer to a first plasma process to form a nitrogen-rich protective layer below a top surface of the low-k dielectric, releasing a precursor on the metallization layer to cover top surfaces of the conductive structures with precursor molecules, and treating the precursor molecules with a second plasma process to dissociate the precursor molecules and form the capping layer. Additionally, the method includes forming an etch stop layer to cover the capping layer and top surfaces of the low-k dielectric.

The invention discloses a bending-resistant and low-dielectric transparent polyimide film for a flexible electronic device as well as a preparation method and application of the bending-resistant and low-dielectric transparent polyimide film. The surfaces of glass beads are subjected to grafting modification treatment by adopting alkali liquor and a coupling agent; performing ultrasonic dispersion to uniformly disperse the grafted and modified glass beads in a solvent; the preparation method comprises the following steps: dissolving a fluorine-containing diamine monomer in a solvent containing graft modified glass beads under a nitrogen protection atmosphere, after the fluorine-containing diamine monomer is completely dissolved, slowly adding a fluorine-containing dianhydride monomer in batches under a continuous stirring condition, and preparing a transparent polyamide acid solution containing glass beads through a condensation polymerization reaction; and uniformly coating the polyamide acid solution containing the glass beads on a glass substrate through a blade coating machine, and then carrying out gradient heating to obtain the glass bead compounded transparent polyimide film. Fluorine atoms are introduced into molecular structures of dianhydride and diamine, and grafting modified glass beads are doped to serve as filler, so that the transparent polyimide film with bending resistance and low dielectric constant characteristics is successfully prepared.

The invention belongs to the technical field of aramid paper, and particularly relates to aramid paper with high mechanical performance and electromagnetic shielding performance as well as a preparation method and application of the aramid paper. According to the aramid paper with the high mechanical performance and the electromagnetic shielding performance, the electromagnetic shielding layer is bonded to the surface of the aramid paper, so that the aramid paper has the mechanical performance such as high tensile strength and the electromagnetic shielding performance such as low dielectric constant; meanwhile, the composition in the electromagnetic shielding layer is improved, an oriented carbon-based conductive material and a non-oriented magnetic material are compounded, and the non-oriented magnetic material is filled in a gap formed by intersection of the oriented carbon-based conductive material, so that the overall electromagnetic shielding performance of the electromagnetic shielding layer can be improved; therefore, the technical problem that an electromagnetic shielding material in the prior art does not have high mechanical performance and electromagnetic shielding performance at the same time is solved.

The invention discloses a low-dielectric and high-peel-strength hydrocarbon resin as shown in a formula (3), a composition for a copper-clad plate and a preparation method of the composition. The preparation method is characterized in that divinyl benzene and a phenolic compound containing double bonds are subjected to a polymerization reaction in the presence of a free radical initiator, a polymerization inhibitor and a solvent to obtain the low-dielectric and high-peel-strength hydrocarbon resin; the resin composition for the copper-clad plate is prepared by uniformly mixing 100 parts by mass of hydrocarbon resin with low dielectric and high peel strength, 10-20 parts by mass of maleimide resin, 0.1-0.5 part by mass of an initiator, 0.1-0.5 part by mass of an antioxidant, 60-80 parts by mass of filler and 70-140 parts by mass of a solvent at the temperature of 30-50 DEG C. The composition for the low-dielectric and high-peel-strength hydrocarbon resin and the copper-clad plate has the characteristics of high peel strength, low dielectric constant, low dielectric loss and the like, is good in product performance, and is suitable for the fields of artificial intelligence, 5G base stations, power amplifiers, automobile radars and the like. # imgabs0 #

The invention discloses a low-dielectric polyimide film material and a preparation method and application thereof, and relates to the technical field of film material preparation, and the molecular structure of a polyimide copolymer in the polyimide film material comprises structural units shown in general formulas (1) and (2), the polyimide copolymer comprises aromatic ether, fluorine atoms or fluorine-containing groups and siloxane units, at least one of C and D in the structural units contains fluorine atoms or fluorine-containing groups, and the molar ratio of the content of the copolymerization components x: y: z is (1-90%): (1-50%): (1-30%). According to the preparation method, a batch feeding synthesis mode is adopted, molecular chain growth of polyamide acid is controlled through the feeding ratio, the salt forming effect of silicon-containing diamine and polyamide acid is avoided, and high-molecular-weight polyimide is obtained. The polyimide film prepared by the method has the characteristics of low dielectric constant and dielectric loss, low water absorption, good adhesion and the like, and can be applied to the fields of high-frequency and high-speed integrated circuits and the like.

The invention relates to aluminum borosilicate glass with low dielectric constant and low dielectric loss and a preparation method and application thereof, and relates to the field of aluminum borosilicate glass manufacturing, the aluminum borosilicate glass comprises the following main components by molar percentage: 60%-85% of SiO2, 0-10% of Al2O3, 2%-30% of B2O3, 0-20% of alkaline earth oxide, 0-10% of alkali metal oxide, 0-10% of ZnO, 0-1% of P2O5 and 0-2% of TiO2 and / or ZrO2; during preparation, the raw materials are melted, clarified and homogenized according to the corresponding dosage, and then are annealed for 3-8 hours at the temperature of 600-650 DEG C. The obtained aluminum borosilicate glass can reduce transmission loss during high-frequency signal transmission, has dielectric constant stability which does not exceed + / -0.5 change under a 1-30 GHz signal test, and can be applied to preparation of integrated antennas, electronic packaging and micro electro mechanical system packaging.

The invention belongs to the technical field of wave absorption, and provides a variable-wall-thickness composite material honeycomb interlayer wave-absorbing structure and an integrated preparation method thereof. The core structure in the middle wave-absorbing layer is composed of a plurality of variable-wall-thickness unit cell cores arranged in an array mode, the reflection frequency of electromagnetic waves in the structure can be increased, the electromagnetic wave absorption frequency band is widened, and the electromagnetic wave absorption loss is improved. The reflecting layer of the interlayer wave-absorbing structure is prepared from a composite material composed of conductive continuous fibers and high-performance thermoplastic resin, the wave-transparent layer is prepared from a composite material composed of low-dielectric-constant continuous fibers and high-performance thermoplastic resin, and the core layer is prepared from thermoplastic high-performance resin containing magnetic loss and electrical loss wave-absorbing agents. The preparation method is easy to operate, the process is stable, raw materials are wide, integrated overall printing of the complex sandwich wave-absorbing structure can be achieved, and good application prospects are achieved.

To provide a resin composition having a low dielectric constant, a low dielectric loss tangent, a high glass transition temperature, and a low peeling strength change rate.SOLUTION: A resin composition contains a resin mixture. The resin composition contains a first resin polymerized with a monomer mixture containing styrene, divinyl benzene, and ethylene, a second resin containing a polyphenylene ether resin modified with bismaleimide, a third resin block-polymerized with a monomer mixture containing styrene and butadiene, and acenaphthylene.SELECTED DRAWING: None

The invention relates to the field of fiber materials, and provides a low-dielectric constant glass fiber and a preparation method thereof, and the low-dielectric constant glass fiber comprises basalt glass fiber and a silicon oxyfluoride layer coating the surface of the basalt glass fiber. The basalt glass fiber is prepared by adopting a melting wire drawing method, the average diameter is 5.0-15.0 microns, and the volume ratio of a crystalline state to an amorphous state is controlled to be (5.0-15.0): (85.0-95.0). The thickness of the silicon oxyfluoride layer is 140-400 nm, and the silicon oxyfluoride layer is obtained through a sol-gel method and is formed by conducting dipping, ultrasonic treatment and purging on tetraethoxysilane and ammonium fluoride sol and then conducting heat treatment in an inert atmosphere. The preparation method comprises the steps of basalt raw material crushing, acid pickling, melting, wire drawing and gradient cooling, and the uniformity and stability of the fibers are ensured. The preparation conditions, impregnation parameters, purging pressure and heat treatment temperature of the modified sol are all optimized, so that uniform coating and stability enhancement are realized. The glass fiber provided by the invention has low dielectric constant and excellent heat resistance and hydrophobicity, and is suitable for the fields of high-frequency electronic substrates, aerospace and 5G communication.

The invention provides a low-dielectric-constant electromagnetic-shielding heat-conducting polyether-ether-ketone composite material and a preparation method thereof, and belongs to the technical field of high polymer material processing, the low-dielectric-constant electromagnetic-shielding heat-conducting polyether-ether-ketone composite material comprises the following raw materials: polyether-ether-ketone resin, low-dielectric-constant glass fibers, a conductive filler, a low-dielectric-constant filler and an auxiliary agent; comprising the following steps: S1, uniformly mixing polyether-ether-ketone resin, a low-dielectric filler, a conductive filler and an auxiliary agent to obtain a mixed material; s2, the mixed material is added into a double-screw extruder from a main feeding port, the low-dielectric glass fiber is added into the double-screw extruder from a side feeding port, the mixed material and the low-dielectric glass fiber are evenly mixed in a screw cavity of the double-screw extruder, and a secondary mixed material is obtained; s3, the secondary mixed material is subjected to heating melting, extrusion granulation and sieving, and the polyether-ether-ketone composite material is obtained. According to the technical scheme provided by the invention, the composite material has the properties of low dielectric constant, strong electromagnetic shielding and high thermal conductivity at the same time.

To provide a pressure sensitive adhesive sheet with reduced low dielectric constant to lower noises, having sufficient adhesive strength as well as drop impact resistance.SOLUTION: A pressure sensitive adhesive sheet includes an adhesive layer. The adhesive layer causes no peelings at a drop impact resistance test under a prescribed condition, has a dielectric constant of 4 or less at a frequency 100 kHz, and a glass adhesive strength of 10 N / 20 mm or more under a condition of a peeling angle 180° and a tensile speed 300 mm / min at least on one side thereof, and is to be used for an optical member.SELECTED DRAWING: None

The invention relates to a copper-clad laminate and a preparation method thereof, the copper-clad laminate comprises a single-sided composite copper foil, the single-sided composite copper foil comprises a single-layer copper foil and a carrier film covering the single-layer copper foil; the at least one layer of prepreg is laminated on the single-sided composite copper foil, the prepreg is formed by impregnating thin glass fiber cloth with a resin glue solution, and the number of warp yarns and the number of weft yarns of the thin glass fiber cloth are consistent; the resin glue solution is prepared from bisphenol A cyanate ester resin, bicyclic epoxy resin, bisphenol A epoxy resin, polyhedral oligomeric silsesquioxane and mesoporous silicon dioxide filler. By improving the copper foil structure and the resin component, the low dielectric constant and low loss of the copper-clad laminate are realized, and the copper-clad laminate is especially suitable for 5G products.

Plasma enhanced atomic layer deposition methods and apparatuses for depositing low dielectric constant doped silicon oxide films from fluorocarbosilane, fluorosilane or carbosilane precursors which are a single source of the desired dopants are provided. Conformal deposition may be achieved by utilization of silicon precursors having at least one direct silicon-fluorine bond or fluorine connected to silicon through a linker. The methods may also include fluoro carboaminosilanes or fluoroaminosilanes.

According to the printed circuit board and the preparation method thereof provided by the invention, the glass core plate is used for replacing a traditional resin material, and the characteristics of low thermal expansion coefficient, low humidity coefficient and low dielectric constant of the glass core plate are utilized, so that warping and signal interference caused by temperature change and environment humidity are effectively reduced, and the stability and reliability of the PCB are remarkably improved. Meanwhile, by repeatedly constructing a multilayer layer-adding structure, adopting an ABF layer at the position adjacent to the glass substrate and adopting dielectric layers with Dk < = 3.0 and Df < = 0.001 for the rest, signal attenuation and interference can be effectively reduced, signal integrity and transmission efficiency can be ensured, overall buckling deformation of the PCB structure can be reduced or even avoided, and the PCB structure is more stable in performance. The multi-layer adding meets the requirements of different application scenarios for the number of layers of the PCB, improves the flexibility and applicability of the PCB, and enables the PCB to be especially suitable for the application scenarios of high-frequency and high-speed signal transmission.

The invention provides a wafer-level layering failure analysis and sample preparation method of a chip, which comprises the following steps of: preprocessing a chip sample, positioning crystal grains, grinding and thinning according to the plane projection of the crystal grains to carry out primary processing, cutting a target sample, continuously carrying out plane grinding to remove a ball grid array (BGA) solder ball, and preparing the wafer-level layering failure analysis and sample preparation method of the wafer-level layering failure analysis and sample preparation method of the chip. The method comprises the following steps of: adding the raw materials into a first chemical reagent, a second chemical reagent and a third chemical reagent in sequence to react so as to release the residual stress of the packaging structure to the greatest extent, reduce the damage to failure morphology in a sample preparation process and obtain separated bare crystal grains, and finally scanning and analyzing the bare crystal grains by using an ultrasonic acoustic microscope. The method is used for determining whether the advanced technology chip has potential poor layering of the low-dielectric-constant insulating layer and determining the specific position of the poor layering. According to the invention, the technical problem of sample damage caused by external stress in the analysis process can be effectively improved, and subsequent accurate focused ion beam FIB and other physical destructive analysis can be conveniently carried out on the failure position.

A metallic waveguide antenna comprising a waveguide having a waveguide through hole adapted to guide electromagnetic waves; and a dielectric fixture made of a material with a low electrical permittivity attached to a front portion of said waveguide and having a fixture through hole aligned with the waveguide through hole of the attached waveguide.

Methods and apparatuses for depositing silicon nitride using a plasma over low-k dielectric material while protecting the low-k dielectric material are provided. The methods comprise providing a substrate having a dielectric material deposited thereon, depositing a protective layer on the dielectric material in a plasma-free environment, and after depositing the protective layer, exposing the substrate to a first plasma to deposit a first silicon nitride while converting at least a portion of the protective layer to second silicon nitride.

The invention discloses a low dielectric constant material with high heat resistance and high performance and a preparation method thereof, and belongs to the field of high polymer materials. The preparation method comprises the following steps: uniformly mixing the polyphenylene sulfide, the low dielectric glass fibers, the glass beads, the metal salt, the antioxidant and the silane coupling agent to obtain a mixture; and putting the mixture into a double-screw basic machine, and carrying out extrusion molding to prepare the low-dielectric-constant material with high heat resistance and high performance. The low dielectric property of the material is realized by utilizing the glass beads and the low dielectric glass fibers, the material has excellent performance due to the existence of the glass fibers, the material is endowed with extremely high heat resistance due to the adoption of PPS as a main base material, and the metal salt can form metal complexing action with polyphenylene sulfide due to the existence of the metal salt, so that the heat resistance of the material is improved. The dielectric constant is further reduced due to existence of copper, and the method is low in cost, simple and convenient to process and suitable for large-scale production.

The invention discloses a low dielectric constant temperature-stable phosphate microwave dielectric ceramic material for LTCC and a preparation method thereof, the chemical composition formula of the phosphate microwave dielectric ceramic material is A3-xK2x (PO4) 2, A = Ba1-ySry, x is more than or equal to 0.1 and less than or equal to 0.5, y is more than or equal to 0 and less than or equal to 1, and the phosphate microwave dielectric ceramic material comprises two phases of A3 (PO4) 2 and KAPO4; the preparation method comprises the following steps: regulating and controlling the A-site ion radius of A3 (PO4) 2-based ceramic, pre-sintering to directly synthesize complex-phase powder containing phases A3 (PO4) 2 and KAPO4 in situ in one step, then adding H3BO3 powder accounting for 1-5% of the total mass of a base material, and carrying out ball milling, drying, sieving, forming, rubber discharging and sintering to obtain a ceramic sample; the ceramic material has a low sintering temperature (850-950 DEG C), a low dielectric constant (epsilon r = 8.9-12.6), a high quality factor (Q * f = 10186-50213 GHz) and a near-zero temperature resonance frequency coefficient (-7.1-7.2 ppm / DEG C), the preparation process is simple, the cost is low, the raw materials are non-toxic and easy to obtain, and the ceramic material is suitable for being used as an LTCC dielectric substrate material and has important industrial application value.

A semiconductor device having a low-k isolation structure and a method for forming the same are provided. The semiconductor device includes channel structures, laterally extending on a substrate; gate structures, intersecting and covering the channel structures; and a channel isolation structure, laterally penetrating through at least one of the channel structures, and extending between separate sections of one of the gate structures along an extending direction of the one of the gate structures. A low-k dielectric material in the channel isolation structure comprises boron nitride.

Disclosed is a display device having enhanced touch sensitivity by providing an organic encapsulation layer with a low dielectric constant. The display device includes a substrate, a transistor located on the substrate, a light emitting diode electrically connected to the transistor, a first inorganic encapsulation layer located on the light emitting diode, the organic encapsulation layer located on the first inorganic encapsulation layer, and a second inorganic encapsulation layer located on the organic encapsulation layer, in which the organic encapsulation layer includes a plurality of composites, and each of the plurality of composites comprising a plurality of nucleotides and a hollow polymer.

Provided is a glass fiber, which achieves both of a low spinning temperature, and a low dielectric constant and a low dielectric loss tangent. The glass fiber includes as a glass composition, in terms of mass %, 40% to 80% of SiO2, 0% to 20% of Al2O3, and 10% to 30% of B2O3, includes at least one kind selected from MgO, CaO, SrO, BaO, Li2O, Na2O, K2O, ZrO2, Fe2O3, SnO2, F, and Cl, has a total content of MoO3, Cr2O3, Pt, and Rh of from 0.01 ppm to 500 ppm, and has a value of TiO2 (mass %)×MoO3 (ppm) of 3,100 or less.

The invention relates to a motor outgoing line technology, and discloses a special material for a motor outgoing line. The polyimide composite material is prepared from the following components in percentage by weight: 50 to 70 percent of polyimide matrix material, 5 to 12 percent of nano-scale low-dielectric-constant filler, 10 to 20 percent of micron-scale reinforcing filler, 3 to 8 percent of conductive filler, 0.5 to 2 percent of interface regulating agent and 1 to 3 percent of processing aid. The invention also provides a preparation method of the special material for the motor outgoing line. The preparation method comprises the following steps: S1, carrying out surface modification on a nanoscale low-dielectric-constant filler and an interface regulating agent through solvent dispersion; by adopting the technical scheme of compounding the surface modified silicon dioxide nanoparticles and the polyimide matrix, the technical effects of reducing the dielectric constant and reducing the leakage current are achieved. By modifying the filler, the dispersity and interface bonding property of particles are improved, and the defects of high dielectric constant and large leakage current caused by interface polarization and uneven distribution of the filler in the prior art are overcome.

The invention relates to the field of semiconductors, and provides a semiconductor device, a manufacturing method, a chip and electronic equipment. The semiconductor device comprises a substrate, a well region, a buffer region, a source region, a drain region, a dielectric layer and a grid electrode, the well region, the buffer region, the source region and the drain region are located on the substrate, the source region is formed on the surface of the well region, and the drain region is formed on the surface of the buffer region. The dielectric layer comprises a first dielectric layer made of a high dielectric constant material and a second dielectric layer made of a low dielectric constant material, and the first dielectric layer is located on the surface of the substrate between the well region and the buffer region and extends to the surface of the well region; the gate is located on the surface of the first dielectric layer, and the second dielectric layer is located on the surfaces of the buffer region and the drain region. An inversion channel is formed in the substrate between the well region and the buffer region by using the first dielectric layer made of a high-dielectric-constant material, so that the on-resistance is reduced; the breakdown voltage of the drain end is improved through the buffer region, the gate-drain capacitance is reduced through the second dielectric layer made of the low-dielectric-constant material, and meanwhile the voltage withstanding characteristic of the gate and the drain end is improved.

The invention discloses a low-dielectric-constant polyamide material, and relates to the technical field of high polymer materials. The invention discloses a low-dielectric-constant polyamide material. The composite material is prepared from the following raw materials in parts by weight: 35 to 45 parts of polyamide 66, 5 to 10 parts of polytetrafluoroethylene micro powder, 8 to 12 parts of modified porous siloxane microspheres, 3 to 7 parts of modified nano zinc oxide, 10 to 15 parts of glass fibers, 4 to 8 parts of polyether-ether-ketone, 1 to 3 parts of graphene nanosheets, 3 to 5 parts of fluororubber, 1 to 2 parts of a titanate coupling agent, 0.3 to 0.7 part of an antioxidant 1010, 0.5 to 1.0 part of ethylene bis stearamide and 0.1 to 0.3 part of an ultraviolet absorbent UV-531. The low-dielectric-constant polyamide material has the remarkable advantages that the raw materials are scientifically proportioned, and various modified components are contained to enhance the performance; all the components are subjected to special treatment, so that the compatibility is good; the preparation process is rigorous, and the material has excellent dielectric properties; and the material also has good heat resistance and weather resistance and strong mechanical properties, and is suitable for various scenes with high dielectric constant requirements.