928 results about "High dielectric permittivity" patented technology

The invention provides a high-performance glass fiber composition and a method for preparing glass fiber by using the high-performance glass fiber composition, and the high-performance glass fiber composition comprises the following components in molar percentage: 61 to 67 percent of SiO2, 7.0 to 16.0 percent of B2O3, 0.1 to 16.0 percent of Al2O3, 3.0 to 12.5 percent of MgO, 0.02 to 9.0 percent of CaO, 0.01 to 5.0 percent of ZnO, 0.1 to 5.0 percent of ZrO2, 0.1 to 4.0 percent of TiO2, 0 to 3.0 percent of F2 and 0 to 4.0 percent of P2O5. Wherein F2 and P2O5 are not 0 at the same time. According to the invention, a plurality of specific component oxides with high ion field intensity and low polarizability are combined, and the proportion and addition amount of each component are controlled, so that the elastic modulus of the glass fiber is improved under the condition that the dielectric constant and dielectric loss are not improved, and the processing property of the glass fiber is ensured; the dielectric constant of the glass fiber is not more than 4.75, the dielectric loss is not more than 0.0035, and the elasticity modulus of the glass is not less than 75 GPa.

The invention discloses electronic-grade hafnium oxide and a preparation method and application thereof, and relates to the technical field of high-dielectric-constant materials, and the preparation method comprises the following steps: carrying out chlorination reaction on crushed coarse hafnium oxide and graphite powder to prepare coarse hafnium tetrachloride; purifying the crude hafnium tetrachloride by adopting a molten salt purification method and / or a hydrogenation purification method to prepare high-purity hafnium tetrachloride; the method comprises the following steps: introducing high-purity hafnium tetrachloride into a sublimation furnace, introducing oxygen and an AlCl3 gas-phase catalyst into the sublimation furnace, and oxidizing the high-purity hafnium tetrachloride into hafnium oxide particles and chlorine; and dechlorinating the hafnium oxide particles through a fluidized bed to obtain the electronic-grade hafnium oxide. The hafnium oxide prepared by the preparation method not only has electronic-grade ultra-high purity, but also overcomes various defects of synthesis by using hafnium tetrachloride water; and the technological process is simple, the production efficiency is high, and the production cost is low.

The invention provides a Joule heat ultrafast sintering preparation method of barium titanate ceramic with ultrahigh dielectric constant and low loss, which comprises the following steps: ball-milling and mixing barium titanate powder and copper oxide powder, drying, pressing into a cake-shaped sample, carrying out cold isostatic pressing to obtain a sample piece, and carrying out vacuum treatment on Joule heat ultrafast sintering equipment to obtain the barium titanate ceramic with ultrahigh dielectric constant and low loss. Putting the sample preparation sheet between two layers of graphite felts, and starting Joule heat ultrafast sintering equipment to enable the graphite felts to generate Joule heat, so as to realize short-time sintering of the barium titanate ceramic. According to the invention, a Joule heat ultrafast sintering technology is adopted, and Joule heat is generated by directly applying voltage and current to the graphite felt, so that the sintering time is greatly shortened, and environmental pollution is avoided; meanwhile, the dielectric constant of the barium titanate ceramic is greatly improved by adding copper oxide, and the energy consumption is remarkably reduced.

The invention discloses a novel metasurface matching layer for an ultra wide band curved surface array antenna, which comprises a curved surface supporting material layer, a dielectric substrate and a metasurface metal layer, and is characterized in that the dielectric substrate is bent and conformal on the curved surface supporting material layer, and the metasurface metal layer is arranged on the dielectric substrate; and a plurality of metasurface units are uniformly distributed on the metasurface metal layer. According to the novel metasurface matching layer, curved surface conformal can be realized, and the broadband impedance matching capability and the large-angle scanning performance of the ultra-wideband curved surface array antenna can be improved. According to the equivalent model theory of the novel metasurface matching layer, the novel metasurface matching layer provided by the embodiment of the invention can be equivalent to a dielectric layer with a high dielectric constant, the impedance matching of the antenna is improved, and compared with a common dielectric layer, the novel metasurface matching layer for the ultra-wideband curved surface array antenna provided by the embodiment of the invention has the advantages of light weight, low cost and the like. The cost is low, the processing is easy, and the development prospect is great.

The invention belongs to the technical field of semiconductor device simulation, and particularly relates to a method for rapidly calibrating BDTI surface potential and a related device. The method comprises the following steps: establishing a CIS BDTI device structure through simulation software; introducing silicon data, and calibrating an ion distribution curve in the device structure by taking a true value of SIMS concentration as a reference to obtain a device simulation model for concentration distribution calibration; replacing a surface high dielectric constant layer of the device simulation model for concentration distribution calibration with an electrode layer; and introducing the actually measured potential of the high dielectric constant layer of the device into the electrode layer to complete the surface potential calibration of the device. According to the invention, the surface high dielectric constant layer is directly replaced by the electrode layer, so that the potential of the surface high dielectric constant layer can be directly set as the potential of the actually measured high dielectric constant layer, the process of collecting, continuously increasing and adjusting positive and negative charges for many times and continuously adjusting the potential value of a High K material is avoided, and the calibration process is remarkably shortened.

The invention discloses a nylon composite material and a preparation method thereof. The nylon composite material is prepared from polyamide, GF-POSS-1, GF-POSS-2, a toughening agent, an antioxidant and a lubricating agent. The GF-POSS-1 is obtained by reacting an aminated solid glass fiber and epoxidized POSS in a weight ratio of 5: (0.5-2); the GF-POSS-2 is obtained by reacting epoxidized hollow glass fibers and aminated POSS according to a weight ratio of 5: (0.5 to 2). The nylon composite material disclosed by the invention has excellent comprehensive properties of high tensile strength, high toughness, low dielectric constant and low dielectric loss, and is suitable for high-end scenes such as 5G communication and high-frequency electronic packaging.

The present invention provides a resin composition, a circuit material comprising the same, and a printed circuit board, the resin composition comprising (A) a first thermosetting resin comprising a polybutadiene resin and / or a polybutadiene copolymer resin having a number average molecular weight Mn < = 5000 g / mol; (B) a second thermosetting resin comprising polybutadiene resin and / or polybutadiene copolymer resin, the number average molecular weight Mn being greater than or equal to 15000 g / mol; (C) a first filler comprising rutile type titanium dioxide with D50 of 3-6 [mu] m and purity of more than or equal to 99.5%; (D) a second filler comprising amorphous fused silica, having a D50 of 8-12 [mu] m and a purity of not less than 99.5%; (E) a flame retardant; (F) a silane coupling agent; and (G) a radical initiator. The circuit material prepared from the resin composition has the advantages of high dielectric constant, low dielectric loss, high copper foil peel strength, stable dielectric constant and good thickness consistency.

The invention relates to the technical field of flexible electronics and sensing, in particular to a capacitive flexible pressure sensor based on a barium titanate composite dielectric layer, which sequentially comprises a lower electrode layer, an upper electrode layer, a lower electrode layer and an upper electrode layer from bottom to top, the composite dielectric layer is arranged on the lower electrode layer and is formed by compounding an elastic polymer matrix and a high-dielectric-constant barium titanate (BaTiO3) filler; the upper electrode layer is made of a flexible conductive material and is arranged on the composite dielectric layer; the lower electrode layer and the upper electrode layer are connected with an external capacitance measuring circuit through wires. According to the sensor disclosed by the invention, the comprehensive performance of high sensitivity, wide detection range, low hysteresis and excellent cycle stability is realized by optimizing the shape of the barium titanate filler, surface modification and composite structure design.

The invention provides a compatibilization modified polypropylene capacitor film material with high dielectric property, a preparation method and a capacitor, polypropylene is used as a matrix, ZrO2 with high dielectric constant is used as a nano filler, maleic anhydride grafted polypropylene is used as a compatilizer, and the compatibilization modified polypropylene capacitor film material with high dielectric property is prepared by a method of reducing interfacial force through the compatilizer. The dispersity of the nano zirconium oxide in the matrix is improved, the agglomeration phenomenon of the nano zirconium oxide is reduced, and the nano zirconium oxide is more uniformly dispersed in the matrix, so that the dielectric property of the nano zirconium oxide is improved. The polypropylene-based composite material has the advantages of safety, stability, simplicity in operation, low production cost, good mechanical properties and the like, is suitable for large-scale production, and has a wide application prospect; the thin film capacitor prepared from the material has the advantages in the aspects of current bearing, dielectric loss bearing and the like.

The invention relates to a biaxially oriented polypropylene composite film for a capacitor and a preparation method of the biaxially oriented polypropylene composite film. The biaxially oriented polypropylene composite film is of an ABA three-layer structure; wherein the layer A is prepared from the following raw materials: PP, a nucleating agent and a composite filler of MAH-g-PP and nanoparticles; the layer B is prepared from the following raw materials: PET master batch, modified silicon dioxide and a brush polymer. According to the preparation method, the three-layer structure composite film is prepared, the layers are firmly combined through covalent bonds, hydrogen-bond interaction and the like, and the interlayer peel strength is remarkably improved; a nano particle filler with a high dielectric constant is introduced into the A-layer structure, so that the dielectric strength of the film is improved, and meanwhile, the film has relatively high anti-breakdown strength; and the layer B effectively improves the mechanical stability of the film material, and has higher mechanical property and material rigidity compared with the traditional PP film.

The utility model belongs to the technical field of wireless communication, and provides a small circularly polarized antenna, which comprises a dielectric substrate, a radiation unit mechanism arranged above the dielectric substrate and used for wireless communication, and a welding mechanism arranged below the dielectric substrate and used for antenna installation. The working performance of the circularly polarized antenna is greatly improved through the arranged radiation unit mechanism, the antenna size is reduced to 1 / 9 wavelength and far smaller than 1 / 2 wavelength by adopting the antenna scheme of the short circuit needle and the double snakelike lines, and circular polarization is realized by adopting the size differential of the two groups of miniaturized units. Wherein the position of the feed probe determines left-hand circular polarization and right-hand circular polarization, the arranged circular polarization antenna structure is more miniaturized and better suitable for various scenes, and during production, a high dielectric constant material is not needed to be used as a dielectric substrate, meanwhile, complex processes such as plate edge copper plating are not needed, and the antenna cost is greatly reduced.

The invention discloses polytetrafluoroethylene composite resin and a preparation method thereof. The polytetrafluoroethylene composite resin comprises one or more modified fillers to enhance mechanical properties, increase dielectric constant and reduce dielectric loss. According to the preparation method of the polytetrafluoroethylene composite resin, the modified filler is added into the polytetrafluoroethylene which is uniformly mixed with the dispersion liquid, and the modified polytetrafluoroethylene composite resin is obtained through condensation treatment. The method is simple and easy to operate, and the influence of introduction of other solvents on the resin performance can be avoided while high-concentration dispersion can be realized.

The invention relates to a p-type niobium oxide dipole-based metal-oxide-semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductor device manufacturing. According to the technical scheme, the MOS device is provided. A gate dielectric stack of the MOS device sequentially comprises an interface layer, a high-k dielectric layer and a p-type electric dipole layer containing niobium oxide from bottom to top. According to the preparation method, the dipole layer is deposited by adopting an atomic layer deposition process, and then atoms in the dipole layer are driven to be diffused to the interface of the high-k dielectric layer and the interface layer through high-temperature rapid annealing treatment so as to form effective electric dipoles. Compared with the prior art, the high dielectric constant characteristic is utilized, the threshold voltage can be positively regulated and controlled to a larger extent, meanwhile, the increase of EOT is remarkably inhibited, and good interface quality is kept.

The invention relates to an oxychloride gate dielectric material and a preparation method and application thereof. The preparation method comprises the following steps: respectively placing a chloride precursor and a substrate material at the bottom and a single-side opening of a same reaction container with a single-side opening, and placing the reaction container with an opening at one side in a chemical vapor deposition device, with the opening positioned at one side of a vent in the chemical vapor deposition device, regulating the relative humidity of the reaction chamber, and depositing on the surface of the substrate material to obtain the oxychloride gate dielectric material. According to the invention, a chemical vapor deposition preparation process is adopted to control and obtain the oxychloride gate dielectric material with controllable and uniform morphology, so that the problems of random shape and non-uniform morphology of the oxychloride gate dielectric material in the chemical vapor deposition process are solved, the controllable growth of the material is realized, and the material has a high dielectric constant; the material also has an atomic-scale flat surface and is applied to a transistor device and / or a capacitor device, and the device has higher performance.

The invention discloses an Mg + Nb co-doped TiO2 giant dielectric ceramic material and a preparation method thereof, and relates to the technical field of giant dielectric materials. The (Mg + Nb) co-doped TiO2 ceramic is successfully prepared by adopting a traditional solid phase method, the performance of the TiO2-based giant dielectric ceramic is regulated and controlled through a new doping strategy, the raw material is single, the preparation process is simple, the cost is low, the repeatability is good, the yield is high, the obtained ceramic material has giant dielectric performance, and the preparation method is suitable for industrial production. The (Mg + Nb) co-doped TiO2 novel giant dielectric ceramic can meet the requirements of a dielectric material with high dielectric constant, low dielectric loss and good temperature and frequency stability, and compared with other widely applied giant dielectric materials, the titanium dioxide-based giant dielectric ceramic has the characteristics of simplicity in preparation and excellent dielectric property.

Multi-layered articles or products comprising layers of filled polymer compositions, methods of making and applications or uses thereof.

The invention relates to the field of semiconductors, and provides a semiconductor device, a manufacturing method, a chip and electronic equipment. The semiconductor device comprises a substrate, a well region, a buffer region, a source region, a drain region, a dielectric layer and a grid electrode, the well region, the buffer region, the source region and the drain region are located on the substrate, the source region is formed on the surface of the well region, and the drain region is formed on the surface of the buffer region. The dielectric layer comprises a first dielectric layer made of a high dielectric constant material and a second dielectric layer made of a low dielectric constant material, and the first dielectric layer is located on the surface of the substrate between the well region and the buffer region and extends to the surface of the well region; the gate is located on the surface of the first dielectric layer, and the second dielectric layer is located on the surfaces of the buffer region and the drain region. An inversion channel is formed in the substrate between the well region and the buffer region by using the first dielectric layer made of a high-dielectric-constant material, so that the on-resistance is reduced; the breakdown voltage of the drain end is improved through the buffer region, the gate-drain capacitance is reduced through the second dielectric layer made of the low-dielectric-constant material, and meanwhile the voltage withstanding characteristic of the gate and the drain end is improved.

The invention discloses an analog memristor based on a Ga2O3 / TiO2 heterojunction structure and a preparation method of the analog memristor, and belongs to the field of nonvolatile resistive random access memorizers, the preparation method comprises the following steps: under a vacuum condition, depositing a conductive film on a pretreated insulating substrate by adopting a physical vapor deposition method to serve as a bottom electrode; sequentially depositing a Ga2O3 thin film and a TiO2 thin film on the bottom electrode by adopting a magnetron sputtering method, and constructing a Ga2O3 / TiO2 heterojunction as a resistive layer; and depositing a conductive thin film on the surface of the resistive layer by adopting a physical vapor deposition method to serve as a top electrode to obtain the analog memristor based on the Ga2O3 / TiO2 heterojunction structure. A Ga2O3 semiconductor material with a wide forbidden band and high electron mobility and a TiO2 material with a high dielectric constant, stability and reliability are adopted, and the excellent and high-stability heterojunction memristor is prepared through a specific sputtering process. Bionic behaviors such as synaptic plasticity can be realized, and the method has important application potential in the fields of high-density storage, neural network calculation, biological synaptic simulation and the like.

The invention belongs to the technical field of microwave circuits, and particularly provides a Z-shaped four-order small band-pass filter based on a quarter mode, so as to realize the performance characteristics of small size, light weight and high out-of-band rejection of the band-pass filter. The invention comprises a port coupling structure, namely an input coaxial port and an output coaxial port; the embedded tuning structure comprises a first tuning blind hole, a second tuning blind hole, a third tuning blind hole and a fourth tuning blind hole; a U-shaped windowing coupling structure; the through holes are positive symmetric short windowing through holes and oblique symmetric long windowing through holes; the Z-shaped filter cavity structure is a cavity with a silver-plated surface. According to the four-order band-pass filter, the high-dielectric-constant material is combined with partial surface silver plating of the cavity, so that a virtual magnetic wall is formed on the non-silver-plated surface to realize a quarter-mode working mode, and tuning and windowing coupling structures are combined to form the four-order band-pass filter. Due to the novel design thought, compared with a traditional full-mode band-pass filter, the full-mode band-pass filter has the advantages that the size and the weight are reduced by about 75%. The invention can be used in communication systems and millimeter wave related applications.

The invention relates to the technical field of materials, in particular to a polypropylene dielectric film based on graded biaxial stretching, a preparation method and application. The preparation method comprises the following steps: step 1, mixing polypropylene and a crystal regulating agent to obtain a mixture, and carrying out melt blending and hot press molding on the mixture to obtain a sheet to be stretched; wherein the polypropylene accounts for 90-99.5 parts by mass, and the crystal regulating agent accounts for 0.5-10 parts by mass; and 2, carrying out two-stage stretching on the to-be-stretched sheet obtained in the step 1 to obtain the required dielectric film, the polypropylene film material which has the characteristics of high breakdown strength and low leakage current density and is suitable for being used as a polymer-based dielectric film is prepared by utilizing a polymer biaxial stretching technology under the condition of no high-dielectric-constant filler.

The invention relates to a base metal high-voltage multilayer ceramic dielectric capacitor and a preparation method, the base metal high-voltage multilayer ceramic dielectric capacitor is formed by stacking and firing dielectric layers, and each dielectric layer comprises a dielectric layer and an electrode printed on the dielectric layer. The dielectric layer comprises the following raw materials: a BMYT main matrix, an NN material, magnesium oxide, manganous-manganic oxide, zirconium dioxide, calcium carbonate, strontium carbonate and rare earth oxide; through the raw material composition and the preparation method of the ceramic dielectric capacitor, the prepared ceramic dielectric capacitor has excellent performances of high dielectric constant, high voltage resistance, stable dielectric-temperature characteristic curve, low loss, high insulation resistance, long-term high-voltage reliability and the like under the condition of high dielectric thickness (30 microns before firing).

To provide a layered ceramic electronic component that maintains high dielectric constant and has good DC bias characteristics.SOLUTION: The layered ceramic electronic component includes an element assembly formed by alternately stacking internal electrode layers and dielectric layers. The proportion of cubic crystal structures in the particles forming the dielectric layer sandwiched between the internal electrode layers is 25 mass% or more and 75 mass% or less. The average particle size of the particles forming the dielectric layer sandwiched between the internal electrode layers is 30 nm or more and 70 nm or less.SELECTED DRAWING: Figure 4

The utility model relates to the technical field of cold-shrink cable terminals, in particular to a composite cold-shrink cable terminal, which comprises an umbrella skirt, an insulating sleeve is fixedly connected to the inner side of the umbrella skirt, a stress control tube with a high dielectric constant is arranged on the inner side of the insulating sleeve, a sealing sleeve is arranged on the inner side of the stress control tube, and the sealing sleeve is fixedly connected with the umbrella skirt. A group of sealing sleeves are arranged on the base, a stress control sleeve with a high dielectric constant is fixedly connected between the group of sealing sleeves, and plastic spiral supporting strips are arranged on the inner sides of the sealing sleeves. The arc-shaped positioning blocks, the damping rods, the connecting shaft rods and the like are placed on the inner sides of the plastic spiral supporting strips, the supporting effect of the plastic spiral supporting strips can be enhanced through the arc-shaped positioning blocks, materials cannot be rigidly limited through cooperation of the damping rods and the springs, and therefore the situation that shrinkage is not in place due to material fatigue is reduced.

High molecular weight functionalized polymers (“high dielectric polymers”) are disclosed herein, along with related methods of use and manufacture. The high dielectric polymers have a relatively high dielectric permittivity (e.g., greater than 10) as well as a relatively low glass transition temperature (e.g., less than −30° C.). The polymers may be produced utilizing addition polymerization or anionic ring opening to yield a linear or branched polymer backbone containing numerous residual nucleophiles. Then, nucleophilic substitution may be carried out to functionalize the residual nucleophiles. The functionalized polymer may then be purified and used as polymer electrolyte in an electrochemical cell (e.g., as nonaqueous polymeric electrolyte in a secondary Li-ion battery), if desired.

Disclosed is a method of forming gate structures for n-type and p-type transistors. The method includes: forming an interfacial layer and high-K (HK) dielectric layer for the gate structures; forming an n-type metal layer over the HK dielectric layer; forming a hard capping layer over the n-type metal layer while simultaneously strengthening the HK dielectric layer by fluorine passivation; patterning photo resist (PR) material over the hard capping layer that exposes a portion of the hard capping layer over the p-type transistor; removing the n-type metal layer and the hard capping layer over the p-type transistor via wet etching operations using high selectivity chemicals that are highly selective to the hard capping layer and the n-type metal layer; removing the patterned PR material while insulating, by the hard capping layer, gate structures from aluminum oxidation; and forming a p-type metal layer over the hard capping layer and the p-type transistor.

The invention relates to the technical field of epoxy resin encapsulating materials and preparation, in particular to an epoxy resin encapsulating material with a high dielectric constant and a preparation method of the epoxy resin encapsulating material. The epoxy resin encapsulating material comprises the following raw materials in parts by weight: 90-100 parts of bisphenol A epoxy resin, 30-50 parts of dielectric filler, 1-3 parts of modified carbon nanotubes, 5-8 parts of ionic liquid, 25-30 parts of a curing agent, 1-3 parts of a flatting agent and 2-4 parts of an anti-settling agent. The epoxy resin encapsulating material prepared by taking the epoxy resin, the dielectric filler and the modified carbon nanotubes as main raw materials has high dielectric constant, low dielectric loss and good mechanical properties. The dielectric constant and compressive strength of the material can be improved through the barium titanate nanowires with the high length-diameter ratio, interface defects can be reduced through the reaction of the modified carbon nanotubes and the epoxy resin, the dielectric constant of the material is jointly improved, and meanwhile the dispersity of the material in matrix distribution is improved.

A photonic structure and a method for manufacturing the same are provided. The photonic structure includes a substrate, an insulating structure, a first waveguide layer, a second waveguide layer and a high-dielectric constant material. The insulating structure is located over the substrate. The first waveguide layer is embedded in the insulating structure. The second waveguide layer is embedded in the insulating structure and longitudinally spaced apart from the first waveguide layer. The high-dielectric constant material is disposed between the first waveguide layer and the second waveguide layer.

The invention relates to the technical field of antennas, and discloses a miniaturized patch antenna and electronic equipment, the antenna comprises a patch radiator, a grounding plate, a feed structure and a coupling resonance body, the coupling resonance body is a resonance structure suspended in a vertical area between a plane where the patch radiator is located and a plane where the grounding plate is located, the patch radiator and the grounding plate form a resonant cavity, and the coupling resonator is coupled with the resonant cavity and generates multi-mode resonance. According to the invention, the dependence of a traditional patch antenna on a high dielectric constant material (such as ceramic) is abandoned, and the resonance characteristic is optimized by adopting the coupled resonators. Under the condition that the size is not increased, a multi-mode resonance mechanism is utilized, so that the antenna realizes high-efficiency resonance under a compact structure. According to the design, the size of the antenna is obviously reduced, the weight is reduced, and the influence of a high-dielectric-constant material on the radiation characteristic of the antenna is reduced, so that the overall radiation efficiency is effectively improved.

LC media exhibiting a ferroelectric nematic phase at ambient temperature, comprising at least one or more compounds of formula IA having at least five rings,The mixtures are useful for electro-optics, electronics, electro-mechanic and other applications for materials with very high dielectric permittivity.

A non-volatile memory device comprises a substrate, a mold structure that includes gate electrodes stacked on the substrate and mold insulating layers alternately stacked with the gate electrodes, a cell contact on the substrate, wherein the cell contact is electrically connected to a selection gate electrode of the gate electrodes and is not electrically connected to a non-selection gate electrode of the gate electrodes, an insulating ring on the substrate, wherein the insulating ring is between the non-selection gate electrode and a sidewall of the cell contact and is in contact with the non-selection gate electrode, and a high dielectric constant layer between respective ones of the gate electrodes and the mold insulating layers, wherein the insulating ring includes a first portion that overlaps the high dielectric constant layer in a vertical direction, and a second portion that does not overlap the high dielectric constant layer in the vertical direction.