782 results about "High dielectric permittivity" patented technology

The invention discloses electronic-grade hafnium oxide and a preparation method and application thereof, and relates to the technical field of high-dielectric-constant materials, and the preparation method comprises the following steps: carrying out chlorination reaction on crushed coarse hafnium oxide and graphite powder to prepare coarse hafnium tetrachloride; purifying the crude hafnium tetrachloride by adopting a molten salt purification method and / or a hydrogenation purification method to prepare high-purity hafnium tetrachloride; the method comprises the following steps: introducing high-purity hafnium tetrachloride into a sublimation furnace, introducing oxygen and an AlCl3 gas-phase catalyst into the sublimation furnace, and oxidizing the high-purity hafnium tetrachloride into hafnium oxide particles and chlorine; and dechlorinating the hafnium oxide particles through a fluidized bed to obtain the electronic-grade hafnium oxide. The hafnium oxide prepared by the preparation method not only has electronic-grade ultra-high purity, but also overcomes various defects of synthesis by using hafnium tetrachloride water; and the technological process is simple, the production efficiency is high, and the production cost is low.

The invention provides a Joule heat ultrafast sintering preparation method of barium titanate ceramic with ultrahigh dielectric constant and low loss, which comprises the following steps: ball-milling and mixing barium titanate powder and copper oxide powder, drying, pressing into a cake-shaped sample, carrying out cold isostatic pressing to obtain a sample piece, and carrying out vacuum treatment on Joule heat ultrafast sintering equipment to obtain the barium titanate ceramic with ultrahigh dielectric constant and low loss. Putting the sample preparation sheet between two layers of graphite felts, and starting Joule heat ultrafast sintering equipment to enable the graphite felts to generate Joule heat, so as to realize short-time sintering of the barium titanate ceramic. According to the invention, a Joule heat ultrafast sintering technology is adopted, and Joule heat is generated by directly applying voltage and current to the graphite felt, so that the sintering time is greatly shortened, and environmental pollution is avoided; meanwhile, the dielectric constant of the barium titanate ceramic is greatly improved by adding copper oxide, and the energy consumption is remarkably reduced.

The invention belongs to the technical field of semiconductor device simulation, and particularly relates to a method for rapidly calibrating BDTI surface potential and a related device. The method comprises the following steps: establishing a CIS BDTI device structure through simulation software; introducing silicon data, and calibrating an ion distribution curve in the device structure by taking a true value of SIMS concentration as a reference to obtain a device simulation model for concentration distribution calibration; replacing a surface high dielectric constant layer of the device simulation model for concentration distribution calibration with an electrode layer; and introducing the actually measured potential of the high dielectric constant layer of the device into the electrode layer to complete the surface potential calibration of the device. According to the invention, the surface high dielectric constant layer is directly replaced by the electrode layer, so that the potential of the surface high dielectric constant layer can be directly set as the potential of the actually measured high dielectric constant layer, the process of collecting, continuously increasing and adjusting positive and negative charges for many times and continuously adjusting the potential value of a High K material is avoided, and the calibration process is remarkably shortened.

The invention discloses a nylon composite material and a preparation method thereof. The nylon composite material is prepared from polyamide, GF-POSS-1, GF-POSS-2, a toughening agent, an antioxidant and a lubricating agent. The GF-POSS-1 is obtained by reacting an aminated solid glass fiber and epoxidized POSS in a weight ratio of 5: (0.5-2); the GF-POSS-2 is obtained by reacting epoxidized hollow glass fibers and aminated POSS according to a weight ratio of 5: (0.5 to 2). The nylon composite material disclosed by the invention has excellent comprehensive properties of high tensile strength, high toughness, low dielectric constant and low dielectric loss, and is suitable for high-end scenes such as 5G communication and high-frequency electronic packaging.

The invention relates to the technical field of flexible electronics and sensing, in particular to a capacitive flexible pressure sensor based on a barium titanate composite dielectric layer, which sequentially comprises a lower electrode layer, an upper electrode layer, a lower electrode layer and an upper electrode layer from bottom to top, the composite dielectric layer is arranged on the lower electrode layer and is formed by compounding an elastic polymer matrix and a high-dielectric-constant barium titanate (BaTiO3) filler; the upper electrode layer is made of a flexible conductive material and is arranged on the composite dielectric layer; the lower electrode layer and the upper electrode layer are connected with an external capacitance measuring circuit through wires. According to the sensor disclosed by the invention, the comprehensive performance of high sensitivity, wide detection range, low hysteresis and excellent cycle stability is realized by optimizing the shape of the barium titanate filler, surface modification and composite structure design.

The invention provides a compatibilization modified polypropylene capacitor film material with high dielectric property, a preparation method and a capacitor, polypropylene is used as a matrix, ZrO2 with high dielectric constant is used as a nano filler, maleic anhydride grafted polypropylene is used as a compatilizer, and the compatibilization modified polypropylene capacitor film material with high dielectric property is prepared by a method of reducing interfacial force through the compatilizer. The dispersity of the nano zirconium oxide in the matrix is improved, the agglomeration phenomenon of the nano zirconium oxide is reduced, and the nano zirconium oxide is more uniformly dispersed in the matrix, so that the dielectric property of the nano zirconium oxide is improved. The polypropylene-based composite material has the advantages of safety, stability, simplicity in operation, low production cost, good mechanical properties and the like, is suitable for large-scale production, and has a wide application prospect; the thin film capacitor prepared from the material has the advantages in the aspects of current bearing, dielectric loss bearing and the like.

The invention relates to a biaxially oriented polypropylene composite film for a capacitor and a preparation method of the biaxially oriented polypropylene composite film. The biaxially oriented polypropylene composite film is of an ABA three-layer structure; wherein the layer A is prepared from the following raw materials: PP, a nucleating agent and a composite filler of MAH-g-PP and nanoparticles; the layer B is prepared from the following raw materials: PET master batch, modified silicon dioxide and a brush polymer. According to the preparation method, the three-layer structure composite film is prepared, the layers are firmly combined through covalent bonds, hydrogen-bond interaction and the like, and the interlayer peel strength is remarkably improved; a nano particle filler with a high dielectric constant is introduced into the A-layer structure, so that the dielectric strength of the film is improved, and meanwhile, the film has relatively high anti-breakdown strength; and the layer B effectively improves the mechanical stability of the film material, and has higher mechanical property and material rigidity compared with the traditional PP film.

The invention relates to a p-type niobium oxide dipole-based metal-oxide-semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductor device manufacturing. According to the technical scheme, the MOS device is provided. A gate dielectric stack of the MOS device sequentially comprises an interface layer, a high-k dielectric layer and a p-type electric dipole layer containing niobium oxide from bottom to top. According to the preparation method, the dipole layer is deposited by adopting an atomic layer deposition process, and then atoms in the dipole layer are driven to be diffused to the interface of the high-k dielectric layer and the interface layer through high-temperature rapid annealing treatment so as to form effective electric dipoles. Compared with the prior art, the high dielectric constant characteristic is utilized, the threshold voltage can be positively regulated and controlled to a larger extent, meanwhile, the increase of EOT is remarkably inhibited, and good interface quality is kept.

The invention relates to an oxychloride gate dielectric material and a preparation method and application thereof. The preparation method comprises the following steps: respectively placing a chloride precursor and a substrate material at the bottom and a single-side opening of a same reaction container with a single-side opening, and placing the reaction container with an opening at one side in a chemical vapor deposition device, with the opening positioned at one side of a vent in the chemical vapor deposition device, regulating the relative humidity of the reaction chamber, and depositing on the surface of the substrate material to obtain the oxychloride gate dielectric material. According to the invention, a chemical vapor deposition preparation process is adopted to control and obtain the oxychloride gate dielectric material with controllable and uniform morphology, so that the problems of random shape and non-uniform morphology of the oxychloride gate dielectric material in the chemical vapor deposition process are solved, the controllable growth of the material is realized, and the material has a high dielectric constant; the material also has an atomic-scale flat surface and is applied to a transistor device and / or a capacitor device, and the device has higher performance.

The invention discloses an Mg + Nb co-doped TiO2 giant dielectric ceramic material and a preparation method thereof, and relates to the technical field of giant dielectric materials. The (Mg + Nb) co-doped TiO2 ceramic is successfully prepared by adopting a traditional solid phase method, the performance of the TiO2-based giant dielectric ceramic is regulated and controlled through a new doping strategy, the raw material is single, the preparation process is simple, the cost is low, the repeatability is good, the yield is high, the obtained ceramic material has giant dielectric performance, and the preparation method is suitable for industrial production. The (Mg + Nb) co-doped TiO2 novel giant dielectric ceramic can meet the requirements of a dielectric material with high dielectric constant, low dielectric loss and good temperature and frequency stability, and compared with other widely applied giant dielectric materials, the titanium dioxide-based giant dielectric ceramic has the characteristics of simplicity in preparation and excellent dielectric property.

Multi-layered articles or products comprising layers of filled polymer compositions, methods of making and applications or uses thereof.

The invention discloses an analog memristor based on a Ga2O3 / TiO2 heterojunction structure and a preparation method of the analog memristor, and belongs to the field of nonvolatile resistive random access memorizers, the preparation method comprises the following steps: under a vacuum condition, depositing a conductive film on a pretreated insulating substrate by adopting a physical vapor deposition method to serve as a bottom electrode; sequentially depositing a Ga2O3 thin film and a TiO2 thin film on the bottom electrode by adopting a magnetron sputtering method, and constructing a Ga2O3 / TiO2 heterojunction as a resistive layer; and depositing a conductive thin film on the surface of the resistive layer by adopting a physical vapor deposition method to serve as a top electrode to obtain the analog memristor based on the Ga2O3 / TiO2 heterojunction structure. A Ga2O3 semiconductor material with a wide forbidden band and high electron mobility and a TiO2 material with a high dielectric constant, stability and reliability are adopted, and the excellent and high-stability heterojunction memristor is prepared through a specific sputtering process. Bionic behaviors such as synaptic plasticity can be realized, and the method has important application potential in the fields of high-density storage, neural network calculation, biological synaptic simulation and the like.

The invention belongs to the technical field of microwave circuits, and particularly provides a Z-shaped four-order small band-pass filter based on a quarter mode, so as to realize the performance characteristics of small size, light weight and high out-of-band rejection of the band-pass filter. The invention comprises a port coupling structure, namely an input coaxial port and an output coaxial port; the embedded tuning structure comprises a first tuning blind hole, a second tuning blind hole, a third tuning blind hole and a fourth tuning blind hole; a U-shaped windowing coupling structure; the through holes are positive symmetric short windowing through holes and oblique symmetric long windowing through holes; the Z-shaped filter cavity structure is a cavity with a silver-plated surface. According to the four-order band-pass filter, the high-dielectric-constant material is combined with partial surface silver plating of the cavity, so that a virtual magnetic wall is formed on the non-silver-plated surface to realize a quarter-mode working mode, and tuning and windowing coupling structures are combined to form the four-order band-pass filter. Due to the novel design thought, compared with a traditional full-mode band-pass filter, the full-mode band-pass filter has the advantages that the size and the weight are reduced by about 75%. The invention can be used in communication systems and millimeter wave related applications.

The invention relates to a base metal high-voltage multilayer ceramic dielectric capacitor and a preparation method, the base metal high-voltage multilayer ceramic dielectric capacitor is formed by stacking and firing dielectric layers, and each dielectric layer comprises a dielectric layer and an electrode printed on the dielectric layer. The dielectric layer comprises the following raw materials: a BMYT main matrix, an NN material, magnesium oxide, manganous-manganic oxide, zirconium dioxide, calcium carbonate, strontium carbonate and rare earth oxide; through the raw material composition and the preparation method of the ceramic dielectric capacitor, the prepared ceramic dielectric capacitor has excellent performances of high dielectric constant, high voltage resistance, stable dielectric-temperature characteristic curve, low loss, high insulation resistance, long-term high-voltage reliability and the like under the condition of high dielectric thickness (30 microns before firing).

Disclosed is a method of forming gate structures for n-type and p-type transistors. The method includes: forming an interfacial layer and high-K (HK) dielectric layer for the gate structures; forming an n-type metal layer over the HK dielectric layer; forming a hard capping layer over the n-type metal layer while simultaneously strengthening the HK dielectric layer by fluorine passivation; patterning photo resist (PR) material over the hard capping layer that exposes a portion of the hard capping layer over the p-type transistor; removing the n-type metal layer and the hard capping layer over the p-type transistor via wet etching operations using high selectivity chemicals that are highly selective to the hard capping layer and the n-type metal layer; removing the patterned PR material while insulating, by the hard capping layer, gate structures from aluminum oxidation; and forming a p-type metal layer over the hard capping layer and the p-type transistor.

The invention relates to the technical field of epoxy resin encapsulating materials and preparation, in particular to an epoxy resin encapsulating material with a high dielectric constant and a preparation method of the epoxy resin encapsulating material. The epoxy resin encapsulating material comprises the following raw materials in parts by weight: 90-100 parts of bisphenol A epoxy resin, 30-50 parts of dielectric filler, 1-3 parts of modified carbon nanotubes, 5-8 parts of ionic liquid, 25-30 parts of a curing agent, 1-3 parts of a flatting agent and 2-4 parts of an anti-settling agent. The epoxy resin encapsulating material prepared by taking the epoxy resin, the dielectric filler and the modified carbon nanotubes as main raw materials has high dielectric constant, low dielectric loss and good mechanical properties. The dielectric constant and compressive strength of the material can be improved through the barium titanate nanowires with the high length-diameter ratio, interface defects can be reduced through the reaction of the modified carbon nanotubes and the epoxy resin, the dielectric constant of the material is jointly improved, and meanwhile the dispersity of the material in matrix distribution is improved.

A photonic structure and a method for manufacturing the same are provided. The photonic structure includes a substrate, an insulating structure, a first waveguide layer, a second waveguide layer and a high-dielectric constant material. The insulating structure is located over the substrate. The first waveguide layer is embedded in the insulating structure. The second waveguide layer is embedded in the insulating structure and longitudinally spaced apart from the first waveguide layer. The high-dielectric constant material is disposed between the first waveguide layer and the second waveguide layer.

LC media exhibiting a ferroelectric nematic phase at ambient temperature, comprising at least one or more compounds of formula IA having at least five rings,The mixtures are useful for electro-optics, electronics, electro-mechanic and other applications for materials with very high dielectric permittivity.

A non-volatile memory device comprises a substrate, a mold structure that includes gate electrodes stacked on the substrate and mold insulating layers alternately stacked with the gate electrodes, a cell contact on the substrate, wherein the cell contact is electrically connected to a selection gate electrode of the gate electrodes and is not electrically connected to a non-selection gate electrode of the gate electrodes, an insulating ring on the substrate, wherein the insulating ring is between the non-selection gate electrode and a sidewall of the cell contact and is in contact with the non-selection gate electrode, and a high dielectric constant layer between respective ones of the gate electrodes and the mold insulating layers, wherein the insulating ring includes a first portion that overlaps the high dielectric constant layer in a vertical direction, and a second portion that does not overlap the high dielectric constant layer in the vertical direction.

The invention relates to a lithium niobate electro-optical modulator and a preparation method and application thereof. The lithium niobate electro-optical modulator sequentially comprises a ground electrode, a substrate layer, a buried oxide layer, a lithium niobate waveguide and a high-dielectric-constant cladding from bottom to top. Optical isolation grooves which are symmetrically distributed are formed in two sides of the lithium niobate waveguide; the high-dielectric-constant wrapping layer comprises a first wrapping layer and a second wrapping layer from inside to outside, and the dielectric constant of the first wrapping layer is smaller than that of the second wrapping layer; the number of the high-dielectric-constant claddings is greater than or equal to 2; the lithium niobate electro-optical modulator further comprises a signal electrode, and the signal electrode is embedded in the high-dielectric-constant cladding and located above the optical isolation groove. Due to the synergistic effect of the optical isolation groove and the high-dielectric-constant cladding, the lithium niobate electro-optical modulator not only has high modulation efficiency, but also has high bandwidth. In addition, the lithium niobate electro-optical modulator disclosed by the invention has excellent power tolerance.

The invention provides a synchronous crosslinking type flame-retardant cable composite material and a preparation method thereof, and belongs to the technical field of cable materials. Partial discharge is inhibited through high dielectric constant and polarization performance of transition metal zirconium phosphate, a carbonized layer is generated at high temperature, and the flame retardant property is improved; the modified fiber combines high orientation of liquid crystal macromolecules and excellent mechanical and flame retardant properties of polyether-ether-ketone, and forms a block copolymer through dynamic grafting, so that the toughness, fatigue life and thermal stability of the material are enhanced; the silane-metal complex precursor improves the moisture resistance, flame retardance and heat insulation performance of the material through the water sealing effect of a silicon-oxygen network and a micro-ceramic layer generated at high temperature; all the components show a remarkable synergistic effect in the aspects of flame retardance, electrical performance and mechanical performance, multiple flame-retardant barriers are formed, the electrical performance of the material is stabilized, and the overall mechanical performance and interface stability of the composite material are remarkably enhanced.

The invention discloses a microfibrillated cellulose / Al2O3 composite diaphragm and a preparation method and application thereof, and belongs to the technical field of new energy materials and electrochemistry, the preparation method of the microfibrillated cellulose / Al2O3 composite diaphragm comprises the following steps: adding microfibrillated cellulose and Al2O3 particles into deionized water, and mechanically stirring to form a homogeneous suspension; and carrying out suction filtration and freeze drying to obtain the microfibrillated cellulose / Al2O3 composite diaphragm. The microfibrillated cellulose / Al2O3 composite diaphragm prepared by the preparation method provided by the invention not only provides excellent mechanical strength and prevents piercing of zinc dendrites, and Al2O3 particles induce uniform deposition of Zn < 2 + > by virtue of the high dielectric constant of the Al2O3 particles, so that the overall cycling stability of the battery is improved.

The invention relates to the technical field of synthesis and processing of ceramic materials, and discloses a multiphase composite coated high-dielectric-constant ceramic material and a preparation method of the multiphase composite coated high-dielectric-constant ceramic material. 11%-13% of strontium titanate; 5%-7% of holmium oxide; 5%-6% of lead magnesium niobate; 6%-7% of titanium dioxide; 2%-3% of yttrium oxide; 3%-4% of magnesium oxide; 3%-4% of bismuth oxide; 2%-3% of lithium carbonate; 4%-5.5% of silicon dioxide; 1%-2% of zinc oxide; 2.5%-3.5% of manganese dioxide; 6%-7% of copper oxide; 3%-4% of glass powder; 0.05% to 0.08% of lanthanide series elements; through the steps of component pretreatment, ball milling and mixing, drying and sieving, forming, sintering and post-treatment, the component activity is improved through high-temperature calcination pretreatment, and directional growth of crystal grains in the components can be promoted by precisely controlled sintering temperature; the prepared ceramic material has the advantages of high dielectric constant, low dielectric loss, excellent densification effect and good mechanical property.

The embodiment of the invention provides a semiconductor structure, a memory, a memory system and a manufacturing method of the semiconductor structure. The semiconductor structure comprises a stacked structure which comprises a first stacked part and a second stacked part on a plane perpendicular to the stacking direction of the stacked structure, and the first stacked part comprises first dielectric layers and gate layers which are alternately stacked; and a contact structure extending in the stacking direction in the second stacking portion; each of the gate layer and the contact structure comprises a high dielectric constant layer and a conductive layer which are arranged from outside to inside.

The invention relates to the technical field of microwave ferrite devices, and discloses a miniaturized broadband microstrip circulator based on a double-ferrite nested structure, comprising a substrate, the upper surface of which is provided with a magnetic conductive sheet; a high dielectric ceramic is arranged on the magnetic conductive sheet, and a low magnetic saturation ferrite and a high magnetic saturation ferrite are sequentially nested in an inner cavity of the high dielectric ceramic; a circuit is arranged on the upper surface of the high-dielectric ceramic, and a ceramic piece and a permanent magnet are sequentially installed above the circuit. According to the circulator, a magnetic conductive sheet is additionally arranged, a structure with high dielectric ceramics as a core is constructed, the characteristic difference of two ferrite gyromagnetic materials with different magnetic saturation intensities is utilized, and the frequency resonance characteristic of a center junction is adjusted through nested arrangement, so that gyromagnetic effects under different frequencies are complementary to expand the working frequency band. Meanwhile, the high-dielectric ceramic optimizes port impedance matching and reduces electromagnetic wave reflection by virtue of a high dielectric constant, and cooperates with an internal ferrite nested structure, so that the frequency bandwidth is widened through a composite material mode, and miniaturization and broadband effects are achieved.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a silicon carbide SiCMOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) device with improved gate oxide layer reliability, the silicon carbide SiCMOSFET device is composed of a plurality of parallel MOS cells, each MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a gate, a gate oxide layer and a source electrode, the semiconductor epitaxial layer comprises an N substrate layer, an N diffusion layer, a P + layer, a P well layer and an N well layer, a high-K medium is arranged between the grid electrode and the P well layer, and doped polycrystalline silicon is arranged on one side of the high-K medium and located between the source electrode and the N well layer. The high-K medium is one of hafnium oxide, aluminum oxide or zirconium dioxide. Through the double-layer stacked structure of the high-K dielectric and the SiOO gate oxide layer, the high dielectric constant of the high-K material is utilized to share the gate voltage, the electric field intensity of a SiOO interface is remarkably reduced, meanwhile, two orders of magnitude of gate leakage current are reduced, and gate oxide layer degradation caused by hot carrier injection is fundamentally inhibited.

The present application discloses a high dielectric constant composite material containing disulfide bonds, its preparation method and application, and belongs to the technical field of high dielectric constant composite materials. The composite material comprises, by weight, 90-100 parts of epoxy resin, 25-35 parts of a curing agent containing disulfide bonds, and 140-170 parts of modified barium titanate; the modified barium titanate is barium titanate surface-modified with a silane coupling agent containing disulfide bonds. The composite material uses a curing agent containing disulfide bonds to cure the epoxy resin, thereby introducing dynamic disulfide bonds into the polymer matrix, and the surface of the modified barium titanate is grafted with a silane coupling agent containing disulfide bonds, which can not only improve the compatibility with the polymer matrix, but also improve the electrical properties of the composite material and give the composite material self-healing properties.

The invention discloses a polypropylene composite material with high dielectric constant, high strength and high modulus as well as a preparation method and application thereof, and belongs to the technical field of polymer composite materials. According to the composite material, homo-polypropylene is used as a matrix and matched with a high-dielectric-constant composite filler, a modified reinforcing filler and a functional additive, and through reasonable component design and process optimization, the dielectric property and the mechanical property are synergistically improved. Wherein the barium titanate-graphene with the core-shell structure is used as a high-dielectric-constant composite filler, and an efficient dielectric path can be constructed in a polypropylene matrix; the epoxy resin modified chopped glass fiber can significantly enhance the mechanical strength and modulus of the material; the maleic anhydride grafted polypropylene effectively improves the interfacial compatibility of the filler and the matrix. The dielectric constant (10GHz) of the prepared composite material is greater than or equal to 8, the tensile strength is greater than or equal to 60 MPa, and the bending modulus is greater than or equal to 4000 MPa. The composite material has excellent dielectric properties and mechanical properties, and can be widely applied to the fields of electronic appliances, high-frequency communication, new energy automobiles and the like.

The present invention relates to a display pixel circuit using ferroelectric thin-film transistors and a method of driving the same. More particularly, the present invention relates to a display pixel circuit in which a volatile switch function and a non-volatile memory function are selectively applied by using a plurality of ferroelectric thin-film transistors including a ferroelectric gate-insulating film having a high dielectric constant (high-k) and a method of driving the display pixel circuit.

The invention relates to the technical field of energy storage materials, and provides a composite solid polymer electrolyte membrane and a preparation method thereof.The composite solid polymer electrolyte membrane is prepared through the steps that a polymer matrix serves as a matrix, a polar solvent is adopted for dissolving to form a pure polymer solution, then lithium salt and nematic phase liquid crystal E7 are added, a chiral dopant can also be added, uniform printing slurry is formed, and the composite solid polymer electrolyte membrane is obtained through 3D printing. And carrying out hot pressing treatment to prepare the composite solid polymer electrolyte membrane. The electrolyte membrane prepared by the invention has a controllable porous structure, a high dielectric constant and excellent piezoelectricity and energy storage performance, complex structures such as a three-dimensional grid and a porous structure can be directly printed, and the thickness and shape of the membrane can be accurately controlled by adjusting parameters such as a printing path, a layer height and filling density; the method is very suitable for the requirements of rapid customization of product shapes and sizes in the fields of flexible electronics, wearable equipment and the like. The invention also provides an application of the composite solid polymer electrolyte membrane prepared by the method in an energy storage device.