7results about How to "Good etching" patented technology

This invention provides an image sensor and its fabrication method. The projections of multiple photodiodes in the photodiode group on a substrate surround the projection of a floating diffuser on the substrate. Intra-group deep trench isolation is provided between adjacent photodiodes within the photodiode group. The intra-group deep trench isolation includes a linear pattern structure obtained by removing the intersection region of a first line trench isolation along a first direction and a second line trench isolation along a second direction. The intra-group deep trench isolation removes the intersection region, and the projection of the intersection region on the substrate covers the projection of the floating diffuser on the substrate. That is, the intra-group deep trench isolation is not provided in the intersection region of the line trench isolation on the substrate above the floating diffuser to avoid damaging the floating diffuser and causing white pixel problems, thus improving pixel quality. The deeper intra-group deep trench isolation reduces or avoids crosstalk and overflow between photodiodes.

The invention relates to a vertically stacked red, green and blue full-color carrier chip for a microLED display panel. The vertically stacked red, green and blue full-color carrier chip comprises a temporary wafer; and a plurality of LED stacks arranged on the temporary wafer, each of the plurality of LED stacks including a light emitting portion stacked in a vertical direction by a bonding layer, the plurality of LED stacks forming a short channel in a partial region, and emitting only a specific color by current to the light emitting portion where the short channel is not formed, the short channels include a first short channel formed so as to correspond to the width of the light-emitting part, and a second short channel formed so as to penetrate through the light-emitting part.

The invention provides a groove type JFET device of a wide band gap material and a preparation method of the groove type JFET device. The device includes: a cell region trench; a cellular area platform; a plurality of transition region trenches; a plurality of transition zone platforms; the source region is formed at the top of the cellular region platform; the cell region gate region is formed in the epitaxial layer on the side wall and the bottom of the cell region groove, and the transition region gate region is formed in the epitaxial layer on the side wall and the bottom of the transition region groove; the source electrode metal covers the top of the source region; the cellular region gate metal covers the bottom of the cellular region groove, and the transition region gate first metal covers the bottom of the transition region groove; the cell region gate metal and the transition region gate first metal form interconnection at the bottom of the groove; the transition region gate second contact metal covers the top of the transition region platform and is arranged in a floating manner. The device is high in reliability and low in etching difficulty.

The present invention relates to a vertically stacked micro display panel, comprising: a back wafer having a plurality of CMOS electrode pads arranged on the upper surface thereof; a plurality of LED stacks each including a light emitting portion stacked in a vertical direction by a bonding layer, the plurality of LED stacks being arranged on the plurality of CMOS electrode pads; and a common electrode formed on the plurality of LED stacks, each of the plurality of LED stacks forming a short channel in a partial region, the short channel including a first short channel formed so as to correspond to the width of the light-emitting section, the first short channel including a second short channel formed so as to correspond to the width of the light-emitting section, the second short channel including a second short channel formed so as to correspond to the width of the light-emitting section, and the first short channel including a second short channel formed so as to correspond to the width of the light-emitting section, and the second short channel including a third short channel formed so as to correspond to the width of the light-emitting section. And a second short channel formed so as to pass through the light-emitting unit. According to the present invention, there is an effect of facilitating the formation of a short channel in a vertically stacked serial connection (tandem) structure.

A composition comprising octafluorocyclobutane, and comprising at least one of iodine and an iodine-containing perfluoroalkyl compound, the content of the aforementioned iodine and iodine-containing perfluoroalkyl compound being 1,000 mol ppm or less relative to the total molar amount of the composition.

The present invention relates to a vertically stacked micro display panel without a color filter, comprising: a back wafer having a plurality of CMOS electrode pads arranged on the upper surface thereof; and a plurality of LED stacks each including a plurality of light-emitting portions and a plurality of bonding layers stacked in a vertical direction and arranged on the plurality of CMOS electrode pads, the plurality of LED stacks each having a short channel formed in at least one of the first light-emitting portion, the second light-emitting portion, and the third light-emitting portion, the short channel being formed in the first light-emitting portion, the second light-emitting portion, and the third light-emitting portion, and the third light-emitting portion being formed in the second light-emitting portion. A current is applied to the light-emitting section in which the short channel is not formed, and only a specific color is emitted.

The present invention relates to a vertically stacked micro display panel, characterized by comprising: a back surface wafer having a plurality of CMOS electrode pads arranged on the upper surface thereof; a plurality of LED stacks each including a plurality of light emitting portions and a plurality of bonding layers stacked in a vertical direction, the plurality of LED stacks being arranged on the plurality of CMOS electrode pads; and a common electrode formed on the plurality of LED stacks, each of the plurality of LED stacks forming a short-circuit channel in at least one of the plurality of light-emitting portions such that current flows to the light-emitting portion in which the short-circuit channel is not formed, thereby emitting only a specific color, the short-circuit channel having a predetermined depth and width. According to the present invention, even if a vertically stacked tandem structure is adopted, a color filter is not required, so that the chromaticity of the micro display panel can be greatly improved, and the process complexity and productivity can be greatly improved.