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An electrophotographic photoreceptor including an electroconductive substrate and a photosensitive layer overlying the electroconductive substrate. An outermost layer of the electrophotographic photoreceptor is a crosslinked layer including a radical polymerizing monomer having three or more functional groups without a charge transporting structure. The outermost layer also includes a radical polymerizing compound having one functional group with a charge transporting structure and a reactive silicone compound having a radical polymerizing functional group.

An electrophotographic photoreceptor formed of an electroconductive substrate and a photosensitive layer located overlying the electroconductive substrate, wherein the photosensitive layer contains units obtained from a tri- or more functional radical polymerizable monomer having no charge transport structure and a radical polymerizable compound having a charge transport structure and the photosensitive layer has a layer film density of from 1.0 to 1.4 g / cm3.

A chip capacitor which can be miniaturized with structural stability. In the chip capacitor, a capacitor device has a cathode layer formed on an outer surface thereof and an anode wire is protruded from a portion thereof. A cathode lead is electrically connected to the cathode layer. An anode lead is electrically connected to the anode wire through a weld reinforcement. A molding is configured to cover the capacitor device in such a way that the cathode and anode leads are only partially exposed. Protrusions are protruded from outer surfaces of the cathode and anode leads, respectively, thereby forming steps on the outer surfaces thereof. In the chip capacitor, the leads and molding are bonded with much greater strength, thus more structurally robust. Also, this prevents external moisture from penetrating inside the chip capacitor, thereby significantly enhancing moisture resistance.

An image forming method including: charging an electrophotographic photoreceptor including: an electroconductive substrate; and a photosensitive layer comprising a crosslinked surface layer on a surface thereof, which is located overlying the electroconductive substrate, irradiating the electrophotographic photoreceptor with imagewise light to form an electrostatic latent image thereon; developing the electrostatic latent image with a toner to form a toner image on the electrophotographic photoreceptor; transferring the toner image onto a transfer material; and fixing the toner image on the transfer material, wherein the photosensitive layer is sensitive to light having a wavelength of from 400 to 450 nm, and the crosslinked surface layer is formed by crosslinking and hardening a radical polymerizing monomer having three or more functional groups without a charge transport structure and a radical polymerizing compound having one functional group with charge transport structure.

A backlight assembly includes a main circuit board having a light-generating part, a control circuit board which provides a control signal for controlling the light-generating part, and a sub-circuit board which is electrically connected to the control circuit board and receives the control signal, the sub-circuit board including a buffer which generates an amplified control signal in response to the control signal, and where the sub-circuit board is electrically connected to the main circuit board and provides the amplified control signal. The control circuit board and the main circuit board are electrically connected by the sub-circuit board, and the sub-circuit board amplifies the control signal received from the control circuit board and provides the control signal to the main circuit board.

This surge absorber includes an insulating part upon which is formed a conductive layer which is divided into two separate portions by a discharge gap (micro gap) around its circumferential surface; a pair of terminal electrodes which are arranged to oppose the insulating part, and contacts the conductive layer; an insulating tube at the ends of which the terminal electrodes are arranged, and which seals the insulating part in its interior along with seal gases; and a conductive portion provided at least between the terminal electrodes and the conductive layer. As a result, it becomes possible to provide a surge absorber of lower cost, and which is endowed with stabilized performance and high quality, while moreover it exhibits excellent durability.

The present invention discloses a method for forming a copper line of a semiconductor device by using a new damascene process. A copper film is formed over and into trenches formed in a lower insulating layer, a tungsten film is formed on the copper film and planarized, a self-aligned tungsten film pattern is formed over the predetermined copper line region by etching the tungsten film, and a chemical mechanical polishing method is performed using the tungsten film pattern as a hard mask. As a result, the copper line having a generally planar surface and stable conductivity is formed by preventing a misalignment and dishing phenomena, thereby improving device performance, reliability, and process yield.

A method for manufacturing a semiconductor device, includes: (a) forming a SiGe layer on a Si substrate; (b) forming a Si layer on the SiGe layer; (c) forming a dummy pattern made of SiGe in a dummy region of the Si substrate; and (d) wet-etching and removing the SiGe layer formed under the Si layer. In the step (d), an etchant is kept to contact the dummy pattern from before a complete remove of the SiGe layer to an end of the etching.

Disclosed is a glass paste containing a glass powder and an organic component, wherein a black pigment is composed of a complex oxide having a spinel structure and containing Co element and one or more metal elements other than Co element. Consequently, the glass paste is suppressed in color degradation at high temperatures, and thus enables to form a pattern having excellent color and degree of blackness after sintering.

An air electrode, executes the multilayer sintering structure, is composed of at least one layer of base material, two layers of diffused layer and an activating layer coincidence. The base material is the current collector of the air electrode and is made of the metal gauze or metal blister gauze, the upper and the lower sides respectively superpose at least a diffused layer sintered by hydrophobicity carbon material, superpose at least a activating layer outside the diffused layer, every activating layer is sintered by hydrophilicity carbon material adhered with transition metal oxide catalysis; this air electrode can be applied to zinc air battery, negative pole of firing battery or capacitance, especially when applied to the negative pole of zinc air battery, it can avoid the external air influence on the electrolyte in the zinc air battery, in the dry environment, it can maintain the water ratio of zinc positive pole of air battery more than one month, and maintain the stable electric performance.

A thin-film resistor that has a stable electric resistance, the phase transformation to the α-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a β-phase tantalum film or an alloy film mainly containing β-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the β-phase crystal is most strongly oriented to the layer surface.

The invention provides a varnish that contains an insulting resin, a curing agent, a flame retardant, and an organic solvent. The flame retardant comprises flame retardant particles surface treated with at least one surface treatment agent selected from the group consisting of a phosphorus compound soluble in an organic solvent, an organosilicon compound and a dispersant having a carboxyl group. A formed material is obtained by applying and drying the varnish on a substrate. A multilayer structure is obtained by forming on a substrate having a conductor circuit layer an electrical insulation layer obtained by curing the formed material obtained from the varnish.

The invention provides a method for eliminating alloy surface bulge on a junction area of a top metal layer. The method includes the steps of forming a semiconductor device on a substrate and forming metal interconnect layers on the semiconductor device; depositing at least one passivation layer on the topmost one of the metal interconnect layers, as a protective layer; annealing and alloying the topmost one of the metal interconnect layers under protection of the passivation layer; etching the passivation layer to exposure the junction area of the topmost one of the metal interconnect layer. Compared with the prior art, the method has the advantages that the topmost one of the metal interconnect layers is annealed and alloyed under protection of the passivation layer, wires and the junction area can be bonded together better, stable yield and stable electrical property can be maintained, and production cost can also be reduced.

The organic polymer as electromagnetic shielding material and its preparation process belongs to the field of material science and technology. The organic polymer as electromagnetic shielding material has organic polymer of polymerization degree n of 20-400 in the shown structure as the main component. It is prepared with the monomer with aniline and ferrocene as main material, and through slowly dropping oxidant solution into the monomer solution to polymerize and adding proper amount of dopant. The polymer has in its molecular structure polyaniline as the conducting mother substance and ferrocene as the magnetic radical, so that it has both electric conductivity and magnetism. It has high comprehensive shielding effect, low density, wide applicable frequency range, low temperature coefficient, low magnetic loss and other excellent characteristics, and may find wide application in electromagnetic shielding, wave absorption, etc.

A thin-film resistor that has a stable electric resistance, the phase transformation to the α-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a β-phase tantalum film or an alloy film mainly containing β-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the β-phase crystal is most strongly oriented to the layer surface.

The invention relates to a method for the production of glass-coated electric components, wherein the components are, inter alia, passivated by the application of the glass. The lead-free glass used is not affected through purification and processing steps and the electric component is protected from mechanical damaging and other detrimental influences, such as impurities. Further, the method remarkably helps to stabilize the electrical properties of the components. Inter alia, a sufficient acid resistance is achieved and it results in an improvement of the expansion adjustment of the glass.

A capacitance unit includes an anode portion, an insulating portion, a cathode portion and a colloid portion. The front end of the anode portion extends to from an anode terminal. The insulating portion surrounds the anode portion and covers a first partial surface of the anode portion. The cathode portion is disposed next to the insulating portion, and the cathode portion covers a second partial surface of the anode portion. The colloid portion is disposed next to the insulating portion, and the colloid portion surrounds the cathode portion and covers a partial surface of the cathode portion.

A curable composition comprises an insulating resin and a halogen-free flame retardant. The halogen-free flame retardant has a particulate form, and whose primary particles have an average major axis from 0.01 to 5 μm, an aspect ratio of 5 or less, and the proportion of a major axis of more than 10 μm being at most 10% by number. A varnish comprises an insulating resin, a curing agent, a flame retardant and an organic solvent. The flame retardant is a flame retardant in particulate form surface-treated with a coupling agent, and the flame retardant particles present in the varnish have a secondary particle diameter of 30 μm or less.

The invention discloses a manufacturing method of a black insulating film frame of an OGS (one glass solution) touch screen. The method comprises the following step that an inorganic black insulating film is manufactured by a vacuum sputtering deposition method, and a black light-shielding area meeting the requirement on a product is realized by combining stripping technology, wherein the transmittance rate is less than 0.1 percent, the resistivity is higher than 10 <11> omega. cm and the thickness is less than 0.5 micron. The quality and the appearance of an OGS product can be improved by the method, the reject rate caused in a production process is reduced, the production efficiency is improved, the other current technical conditions are not changed, the electric property effect is sable, and the problem that the light-shielding layer interferes with signal is solved.

The present invention provides a method for producing a conducting doped diamond-like nanocomposite film containing, as basic elements, carbon, silicon, metal, oxygen and hydrogen. The film is produced as follows: a substrate is disposed in a vacuum chamber, and a voltage of 0.3-5.0 kV is applied to the substrate; a gas discharge plasma with an energy density of more than 5 kilowatt-hour / gram-atom of carbon particles is generated, and an organosiloxane compound is evaporated into the plasma; a beam of particles of a dopant is introduced into the plasma; and a film is grown on the substrate to produce a conducting doped carbon nanocomposite film with a predetermined relationship of atomic concentrations of carbon, metal and silicon. The film surface is coated with a silicon dioxide layer. A unidirectional alternating current is passed through the film in a current generator mode to effect electric thermal exposure of the film. As the result, a conducting doped diamond-like nanocomposite film having a multilayer structure is produced.

A physical quantity sensor includes a first sensor element, and an outer edge portion arranged in at least part of the outer periphery of the first sensor element, and a first groove extending in a first direction provided in the outer edge portion in a plan view of the outer edge portion.

A device for coalescing an emulsion component in an emulsion including a mixture of at least two different fluid components by an electric field applied to the emulsion. The device includes at least one electrostatic coalescer element. The coalescer element includes a tubular channel made of an electrically insulating material, a first electrode mounted on one side of the tubular channel, and a second electrode mounted on the other side of the tubular channel, a first end wall including a first opening adapted to receive a first end of the tubular channel, and a second end wall including a corresponding second opening adapted to receive a second end of the tubular channel. The walls together with the tubular channel isolate the emulsion from the electrodes.

The invention provides a varnish that contains an insulting resin, a curing agent, a flame retardant, and an organic solvent. The flame retardant comprises flame retardant particles surface treated with at least one surface treatment agent selected from the group consisting of a phosphorus compound soluble in an organic solvent, an organosilicon compound and a dispersant having a carboxyl group. A formed material is obtained by applying and drying the varnish on a substrate. A multilayer structure is obtained by forming on a substrate having a conductor circuit layer an electrical insulation layer obtained by curing the formed material obtained from the varnish.

The invention discloses a light path heat dissipating combination system for a spotlight. The light path heat dissipating combination system comprises a light path system and a heat dissipating system, wherein the light path system comprises a COB integrated light source, a light source light receiver, an aspherical mirror and a plano-convex lens; the light source light receiver is a cylinder body of which two ends are opened; a light emergent outlet is formed in one end of the cylinder body; a conical surface concaved into the cylinder body is arranged at the light emergent outlet end; an opening is formed in the bottom of the conical surface and is used as a light incident inlet; the end face of the light incident inlet and the end face of the other end of the cylinder body are positioned on the same horizontal plane; a vacuum coating layer is arranged on the conical surface; the vacuum coating layer and the conical surface jointly form a reflection part of the light source light receiver; the light incident inlet is greater than the light emergent outlet; the aspherical mirror is fixed at the light emergent outlet of the light source light receiver by an aspherical mirror pressing plate; an aspherical mirror silicone buffer washer is arranged between the aspherical mirror pressing plate and the light source light receiver; and center lines of the plano-convex lens, the aspherical mirror, the light source light receiver and the COB integrated light source are positioned on the same axis. The light path heat dissipating combination system disclosed by the invention has the characteristics of low cost, higher luminous efficacy, excellent heat dissipation potential and capability of prolonging the service life of the spotlight.

A substrate device, includes: a plurality of substrates stacked one on another including a substrate (10) on which electronic components (12a to 12d) are mounted; and a coupling member (30 and 40) connecting mechanically and electrically the two opposed substrates (10 and 20), wherein the coupling member includes: a plurality of core-less solder balls (40) connecting mechanically and electrically the two opposed substrates (10 and 20); and a plurality of spacers (30) configured to keep a clearance between the two opposed substrates (10 and 20) wider than a mounting height of the electronic component (12d) between the substrates.

An electrophotographic photoreceptor having good electric properties such as chargeability, sensitivity and responsibility, having good oxidizing gas resistance, and having good property stability in that the good electric properties thereof do not worsen in repeated use, is provided. An undercoat layer is provided between the conductive support and the photosensitive layer of an electrophotographic photoreceptor, and the undercoat layer contains an amine compound expressed by the following formula (1) added thereto.

Provided is a semiconductor device, including: a substrate, a well region of a first conductivity type, a field region of a second conductivity type, a first doped region of the first conductivity type, and a second doped region of the second conductivity type. The well region is located in the substrate. The field region is located in the well region. The first doped region is located in the well region of a first side of the field region. The second doped region is located in the field region, wherein the first doped region is at least partially surrounded by the second doped region.