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48 results about "Materials science and technology" patented technology

Spirofluorene xanthene phosphine oxide electro-phosphorescent main materials and synthesis and application methods thereof

The invention relates to spirofluorene xanthene phosphine oxide electro-phosphorescent main materials and synthesis and application methods thereof, belongs to the field of photoelectric material science and technology, and in particular relates to four spirofluorene xanthene organic phosphine oxide materials and application of the materials in the field of organic electronics such as organic electroluminescent materials, organic solar cells, organic field-effect tubes, dye laser, organic nonlinear optical materials, fluorescent probes and the like. The series of materials are obtained by introducing diphenyl phosphine oxide groups to the 2nd site, the 2nd and 7th sites, the 2nd' site and the 2nd' and 7th' sites of spirofluorene xanthene respectively. The series of compounds have good charge transfer performance, thermal stability and high triplet energy level (ET=-2.86eV), and can be used as main materials and applied in phosphorescent devices. When the series of compounds are applied in the organic electro-phosphorescent devices, the maximum external quantum efficiency is 10.78 percent and the maximum brightness is 8,582cd/m<2> in the blue phosphorescent device; and in the green phosphorescent device, the maximum external quantum efficiency is 19.1 percent, and the maximum brightness is 16,943cd/m<2>.
Owner:NANJING FANGYUAN GLOBAL DISPLAY TECH

Porous Ni-S/TiO2 composite hydrogen evolution electrode and preparation method thereof

The invention relates to a porous Ni-S/TiO2 composite hydrogen evolution electrode and a preparation method thereof, and belongs to the field of the material science and technology and the field of electro-catalysis hydrogen production. According to the electrode, three-dimensional foamed nickel is adopted as a carrier to provide a porous structure, a nickel-sulfur plating layer is adopted as a surface active layer, TiO2 is doped in the nickel-sulfur plating layer in a composite manner through a composite electrodeposition method, and the foamed nickel based Ni-S/TiO2 composite hydrogen evolution electrode with the porous structure is formed. The composite electrodeposition method is adopted, and nickel-sulfur plating layer deposition is carried out on the surface of the three-dimensionalfoamed nickel. Meanwhile, in the electrodeposition process, the nanoscale TiO2 in composite plating liquid is doped in the nickel-sulfur plating layer through magnetic stirring. The prepared hydrogenevolution electrode has the advantages of being low in overpotential, high in electrode stability and the like, the preparation process is simple, cost is low, and the electrode is suitable for large-scale production.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Phosphorus-containing compound, and preparation method and application thereof

The invention discloses a phosphorus-containing compound, and a preparation method and an application thereof, and belongs to the fields of material science and technology and chemistry. The phosphorus-containing compound is prepared from cheap raw materials through the simple method; the method is essentially characterized in that the compound is prepared from metal ions and a phosphorus source under the illumination condition of a photoactive material; and the temperature in the prior art is more than 100 DEG C, and the method in the invention is a normal temperature synthesis process, so the obtained compound has a weak crystallization degree. The phosphorus-containing compound has a high photocatalytic activity as a conventional catalyst and a photocatalytic reaction cocatalyst, and achieves a high hydrogen production rate for a photocatalytic hydrogen production reaction. The method and the phosphorus-containing compound can be used for producing an electrode and producing a battery, so the production cost of the electrode and the battery is reduced, the preparation method is simplified, and the obtained electrode is a non-noble metal catalyst, and has the advantages of low cost, low overpotential, high stability and certain industrial application values.
Owner:JIANGNAN UNIV

Method for preparing light rare earth hydride by high-temperature direct method

The invention belongs to the field of material science and technology and specifically relates to a method for preparing a light rare earth hydride by a high-temperature direct method. The method comprises the following main implementation steps: placing light rare earth with purity being greater than 99% and particle size being 2-15mm into a quartz glass test tube under the inert gas protection, removing air in a boiler room by the use of inert gas, closing an air evaporation valve, rapidly heating the boiler room at the heating rate of 2-20 DEG C/min until heating to 300-1000 DEG C, controlling inflow of hydrogen to 200-10,000 ml/min, and keeping the temperature and continuously reacting until a hydrogen pressure gauge and pressure in a heating reaction furnace are completely balanced, so as to obtain the required light rare earth hydride and corresponding light rare earth hydride powder. Purity of the light rare earth hydride prepared by the above method is 97-99.99%, and conversion rate of the light rare earth hydride powder is 97-99.99%. Thus, the hydride preparation purity problem in an industrial preparation technology is solved. The method is safe, reliable and is pollution-free, and is of great significance for industrialized and large-scale production of the light rare earth hydride.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY +1

Titanium alloy forge piece preparation method

The invention belongs to the field of material science and technology processing and manufacturing, and relates to a titanium alloy forge piece preparation method. According to the method, firstly, aqualified cast ingot is subjected to one-to-two-heat two-upsetting two-drawing deformation at 1000 DEG C to 1150 DEG C to obtain a primary square billet; then the primary square billet is subjected totwo-heat short-process rolling at 30 DEG C to 60 DEG C below a phase transformation point to obtain a finished plate with a thickness of 110 mm; then by using a water jet cutter or through wire cut electrical discharge machining, blanking is carried out to directly obtain a balance elbow intermediate billet, then the balance elbow intermediate billet is bent and die-forged at 35 DEG C to 40 DEG Cbelow the phase transformation point to obtain a balance elbow die forging; and finally, heat treatment is carried out on the balance elbow die forging to obtain a balance elbow forge piece finishedproduct. According to the preparation method, a whole-process low-cost control thought is adopted, and large-deformation short-process rolling processes of two-phase regions at different temperaturesare introduced, so that purposes of quickly refining and homogenizing a structure are achieved, the manufacturing cost of a forge piece is reduced, and the fatigue performance of the forge piece is improved.
Owner:AVIC BEIJING INST OF AERONAUTICAL MATERIALS

Surface plasma resonance induced multilevel structure and modification method thereof

The invention relates to a surface plasma resonance induced multilevel structure and a modification method thereof, and belongs to the field of material science and technology. The surface plasma resonance induced multilevel structure and the modification method thereof uses a colloidal microsphere gas-liquid interface self-assembly method, a mask etching method and a physical vapor deposition method successively to prepare a metal hollow cone film structure, then uses a micro-nano structure liquid phase transfer and inversion method to invert the metal hollow cone array film on a target substrate, and then a metal inverted hollow nano cone array film structure is obtained. According to the surface plasma resonance induced multilevel structure and the modification method thereof, the sizeand distribution of a silver nanoparticle can be well controlled by adjusting the irradiation time of commercial LED light source; in addition, the method can also be used for modifying gold nanoparticles and polypyrrole particles; and in the surface plasma resonance induced multilevel structure and the modification method thereof, the metal inverted hollow nano cone array film is only used as a specific structure for experimental implementation, and in fact, the method is suitable for surface modification of various micro nano structures with surface plasmon resonance and can be used for large-area modification of multilevel structures.
Owner:JILIN UNIV

Low-pressure chamber high-frequency micro-vibration wetting coating method and equipment

The invention discloses a low-pressure chamber high-frequency micro-vibration wetting coating method and equipment, and belongs to the technical field of material science and technology and thin filmpreparation. The method comprises the following steps: (1) placing a solar cell substrate in a closed chamber with the pressure of 1,000 Pa-5,0000 Pa; 2) coating the surface of a solar cell substratewith the coating substance, and performing normal vibration on the solar cell substrate by using a vibration source with the frequency of 20-200KHz and the amplitude of 10nm-100nm to form a liquid film on the surface of the solar cell substrate; and 3) drying and annealing the liquid film on the surface of the solar cell substrate to form a wet coating film on the surface of the solar cell substrate. According to the method, under the action of high-frequency micro-vibration, the perovskite solution or sol has a dynamic wetting effect on an undulating interface of the pit of the solar cell substrate, bubbles at the pit are effectively discharged and infiltrated into the pit, uncovered holes between the perovskite film and the solar cell substrate are greatly reduced, and the coating speedand the coating quality of the perovskite solution can be greatly improved.
Owner:XI AN JIAOTONG UNIV

Method and equipment for enhancing wettability of thin film by utilizing high-frequency micro-vibration

The invention discloses a method and equipment for enhancing wettability of a thin film by utilizing high-frequency micro-vibration, and belongs to the technical field of material science and technology and thin film preparation. The method comprises the following steps: firstly, coating the surface of a solar cell substrate or a thin film with a coating substance system, enabling the solar cell substrate to vibrate by adopting a plurality of vibration sources to form a layer of liquid film on the surface of the solar cell substrate or the thin film, and secondly, drying and annealing the liquid film on the surface of the solar cell substrate or the thin film, and forming a wetting film on the surface of the solar cell substrate or film. Under the action of multi-source multi-direction high-frequency micro-vibration, a high-frequency dynamic wetting effect is continuously generated at the interactive front edge of the liquid film and the solar cell substrate or the thin film pit, so that bubbles in the pit are expelled, infiltration and filling of large-roughness, large-fluctuation and deep pits are realized, uncovered areas of the thin film and the solar cell substrate or the thinfilm are greatly reduced, the coating speed and the coating quality of the thin film are effectively improved, and a technical scheme is provided for cheap and rapid preparation of large-area perovskite solar cells.
Owner:XI AN JIAOTONG UNIV

A kind of preparation method of porous carbon supported tungsten carbide composite material

The invention discloses a method for preparing a porous carbon-loaded tungsten carbide composite material, which belongs to the field of material science and technology. The material is highly dispersed and uniformly loaded tungsten carbide nanoparticles on a carbon skeleton with a large network of pore structures. The specific preparation method is: using metal nitrate, tungsten source, fuel and soluble organic carbon source as raw materials, the precursor of tungsten oxide and other metal oxides uniformly embedded in the carbon matrix is ​​obtained through the solution combustion synthesis reaction, and the synergistic coupling pore-forming effect is used. , after subsequent high-temperature carbonization and pickling to remove oxides, the specific surface area is as high as 1000m 2 / g or more porous carbon-supported tungsten carbide materials. The raw materials of the present invention are easy to obtain, the process is simple, and the requirements for equipment are low. The prepared porous carbon-supported tungsten carbide powder material has fine particles, narrow particle size distribution, good dispersibility, high specific surface area and pore volume, and uniform loading of tungsten carbide particles. It is not easy to fall off, and as a platinum-substituting catalyst, it can significantly reduce the cost of electrocatalysts, and at the same time improve its hydrogen evolution catalytic performance, and has good industrial application prospects.
Owner:UNIV OF SCI & TECH BEIJING

Surface passivation method of semiconductor material

The invention provides a surface passivation method of a semiconductor material, and relates to the technical field of material science and technology. The surface passivation method of the semiconductor material comprises the following steps: S1. preparing a HCl solution and soaking the semiconductor material in the HCl solution for 15-30min, then taking out the semiconductor material and cleaning its surface with distilled water and sending the semiconductor material into a vacuum environment for drying treatment after cleaning; and S2. placing the semiconductor material in a high-temperature furnace and adjusting the temperature in the high-temperature furnace to the range of 1000-1200 DEG C to form a thermal oxide film on the surface of the semiconductor material and then cooling the semiconductor material by nitrogen. The formed thermal oxide film is removed and then a silicon dioxide passivation layer is formed at a low temperature so that the silicon dioxide passivation layer can be better attached to the surface of the semiconductor material. Meanwhile, the influence of Na ions on the semiconductor material is further removed through the treatment of the HCl solution and the HF solution so that the passivation effect of the semiconductor material is greatly improved.
Owner:徐州博创建设发展集团有限公司
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